CN104505566A - High-power load circuit - Google Patents
High-power load circuit Download PDFInfo
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- CN104505566A CN104505566A CN201510015591.4A CN201510015591A CN104505566A CN 104505566 A CN104505566 A CN 104505566A CN 201510015591 A CN201510015591 A CN 201510015591A CN 104505566 A CN104505566 A CN 104505566A
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- connection structure
- broadband connection
- load circuit
- power load
- resistance
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Abstract
The invention discloses a high-power load circuit and relates to the technical field of load circuits. The high-power load circuit comprises a substrate, a first broadband connection structure, a second broadband connection structure and at least two unit resistors, wherein the first broadband connection structure, the second broadband connection structure and the at least two unit resistors are formed on the substrate. One end of each of the unit resistors is connected to the first broadband connection structure provided with an input end and the other end of each of the unit resistors is connected to the second broadband connection structure provided with a grounding end. The high-power load circuit can achieve millimeter-wave bands and is small in size. The size of the high-power load circuit can be 30% of that of an existing traditional circuit under the condition of taking the same power.
Description
Technical field
The present invention relates to load circuit technical field.
Background technology
Along with microwave and millimeter-wave technology are used widely in fields such as guidance, radar, communications, the requirement of system to power and volume is more and more stricter, following transmitter development trend is that power output is high, volume is little, and this is just to the performance of the device of composition system and the higher requirement of volume proposition.High power load circuit is in transmitters for power synthesis network, power switch etc., for its power absorption branch road, typical high power load adopts the form of single resistance, heterogeneity phantom is uneven in use, in order to meet actual needs, often volume is comparatively large, and frequency of utilization is low, more and more cannot adapt to the demand of current system, frequency is high, high power load that volume is little urgently develops.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of high power load circuit, and can reach millimeter wave frequency band, volume is little, and when absorbing Same Efficieney, its volume can reach 30% of existing traditional circuit.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
A kind of high power load circuit, comprises substrate, and is produced on the first broadband connection structure, the second broadband connection structure and at least two cell resistance on substrate; One end of each cell resistance and the first broadband connection anatomical connectivity, described first broadband connection structure is provided with input; The other end of each cell resistance and the second broadband connection anatomical connectivity, described second broadband connection structure is provided with earth terminal.
Further technical scheme, the first described broadband connection structure, the second broadband connection structure all adopt microstrip line.
Further technical scheme, described substrate adopts semi-conducting material, and resistance is made as nichrome resistance.
Further technical scheme, the number of described cell resistance is 4.
Further technical scheme, described cell resistance is parallel arrangement.
The beneficial effect adopting technique scheme to produce is: broadband connection structure of the present invention adopts row wave circuit theoretical, individual unit resistance is coupled together, after power input, by broadband connection structure by signal halves, power absorption is carried out via cell resistance in each road, the heterogeneity phantom of each resistance is even, makes the utilance of resistance high, thus reduces the volume of resistance.The reduction of resistance volume, makes the equivalent electric length of resistance much smaller than millimetre wavelength, reduces the high-frequency parasitic effect of resistance, makes power termination still keep good standing wave level to millimeter wave; Adopt the broadband connection structure of row ripple principle, appropriate design resistance front-end and back-end length of transmission line and width make the propagation phase velocity of each unit consistent, power signal in total transmission line process step by step by resistance absorption, reach the effect of expanded circuit bandwidth, the number of cell resistance is determined by absorbed power, when the absorbed power needed is larger, the usage quantity of cell resistance is more.The parameter of adjustment broadband connection structure can make the amplitude of each cell resistance signal of arrival, phase place consistent, and feature of the present invention is just to carry out multi-wad join easily.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention 1;
Fig. 2 is the schematic diagram that the embodiment of the present invention 1 needs the variable arranged;
In the accompanying drawings: 1, substrate, 2, input, the 3, first broadband connection structure, 4, cell resistance, the 5, second broadband connection structure, 6, earth terminal.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
As shown in Figure 1, a kind of high power load circuit, comprises substrate 1, and makes the first broadband connection structure 3, second broadband connection structure 5 and four cell resistance 4 on substrate 1.Backing material can be any material being applicable to circuit or chip manufacture technique, and as adopted semi-conducting material, the material of cell resistance 4 can be any known resistive material, as nichrome resistance.One end of each cell resistance 4 is connected with the first broadband connection structure 3, and the first broadband connection structure 3 is provided with input 2; The other end of each cell resistance 4 is connected with the second broadband connection structure 5, and the second broadband connection structure 5 is provided with earth terminal 6.First broadband connection structure 3, second broadband connection structure 5 all adopts microstrip line form.Cell resistance 4 is parallel arrangement.Earth terminal 6 is by the mode ground connection of through hole, bonding or welding.Power is from input 2 input circuit, and by broadband connection structure by the signal quartering, each road absorbs via cell resistance 4, and output carries out ground connection, to form signal path by the second broadband connection structure 5.
The present invention can realize the mean allocation of power in cell resistance 4, and designs the size of broadband connection structure, just can realize broadband character.The watt level that the size of cell resistance 4 absorbs as required determines, the size of broadband connection structure needs to carry out design of Simulation, the size of design is needed to be set to variable when emulating, as shown in Figure 2, each joint length of microstrip line and wide, as L1-L8 and W1-W8, the length of cell resistance 4 and wide, as Lr and Wr, it is all the variable needing to arrange.
Claims (5)
1. a high power load circuit, is characterized in that comprising substrate (1), and is produced on the first broadband connection structure (3) on substrate (1), the second broadband connection structure (5) and at least two cell resistance (4); One end of each cell resistance (4) is connected with the first broadband connection structure (3), and described first broadband connection structure (3) is provided with input (2); The other end of each cell resistance (4) is connected with the second broadband connection structure (5), and described second broadband connection structure (5) is provided with earth terminal (6).
2. a kind of high power load circuit according to claim 1, is characterized in that the first described broadband connection structure (3), the second broadband connection structure (5) all adopts microstrip line.
3., according to a kind of high power load circuit described in claim 1, it is characterized in that described substrate (1) adopts semi-conducting material, resistance is made as nichrome resistance.
4., according to a kind of high power load circuit described in claim 1, it is characterized in that the number of described cell resistance (4) is 4.
5. a kind of high power load circuit according to claim 1,2,3 or 4, is characterized in that described cell resistance (4) is for parallel arrangement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510015591.4A CN104505566B (en) | 2015-01-13 | 2015-01-13 | A kind of high power load circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510015591.4A CN104505566B (en) | 2015-01-13 | 2015-01-13 | A kind of high power load circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104505566A true CN104505566A (en) | 2015-04-08 |
| CN104505566B CN104505566B (en) | 2018-11-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510015591.4A Active CN104505566B (en) | 2015-01-13 | 2015-01-13 | A kind of high power load circuit |
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| Country | Link |
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| CN (1) | CN104505566B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114217195A (en) * | 2021-11-23 | 2022-03-22 | 河北博威集成电路有限公司 | Power device transmission parameter de-embedding device and load traction test system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4310812A (en) * | 1980-08-18 | 1982-01-12 | The United States Of America As Represented By The Secretary Of The Army | High power attenuator and termination having a plurality of cascaded tee sections |
| CN101699650A (en) * | 2009-10-16 | 2010-04-28 | 电子科技大学 | High-frequency large-power microwave thin film resistor |
| CN204348877U (en) * | 2015-01-13 | 2015-05-20 | 河北博威集成电路有限公司 | A kind of high power load circuit |
-
2015
- 2015-01-13 CN CN201510015591.4A patent/CN104505566B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4310812A (en) * | 1980-08-18 | 1982-01-12 | The United States Of America As Represented By The Secretary Of The Army | High power attenuator and termination having a plurality of cascaded tee sections |
| CN101699650A (en) * | 2009-10-16 | 2010-04-28 | 电子科技大学 | High-frequency large-power microwave thin film resistor |
| CN204348877U (en) * | 2015-01-13 | 2015-05-20 | 河北博威集成电路有限公司 | A kind of high power load circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114217195A (en) * | 2021-11-23 | 2022-03-22 | 河北博威集成电路有限公司 | Power device transmission parameter de-embedding device and load traction test system |
| CN114217195B (en) * | 2021-11-23 | 2024-03-12 | 河北博威集成电路有限公司 | Power device transmission parameter de-embedding device and load traction test system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104505566B (en) | 2018-11-06 |
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