CN104505566B - A kind of high power load circuit - Google Patents
A kind of high power load circuit Download PDFInfo
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- CN104505566B CN104505566B CN201510015591.4A CN201510015591A CN104505566B CN 104505566 B CN104505566 B CN 104505566B CN 201510015591 A CN201510015591 A CN 201510015591A CN 104505566 B CN104505566 B CN 104505566B
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- connection structure
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Abstract
The invention discloses a kind of high power load circuits, are related to load circuit technical field；Including substrate, and make the first broadband connection structure, the second broadband connection structure and at least two cell resistances on substrate；One end of each cell resistance is connect with the first broadband connection structure, and the first broadband connection structure is equipped with input terminal；The other end of each cell resistance is connect with the second broadband connection structure, and the second broadband connection structure is equipped with ground terminal.The present invention can reach millimeter wave frequency band, small, and in the case where absorbing Same Efficieney, volume can reach the 30% of existing traditional circuit.
Description
Technical field
The present invention relates to load circuit technical fields.
Background technology
As microwave and millimeter-wave technology are used widely in fields such as guidance, radar, communications, system is to power and body
Long-pending requirement is increasingly stringenter, and the following transmitter development trend is that output power is high, small, this is just to the device of composition system
Performance and volume put forward higher requirements.High power load circuit is used for power synthesis network, power switch in transmitters
Deng being used for its power absorption branch, typical high power load is uneven using the form of single resistance, when in use heterogeneity phantom
Even, in order to meet actual needs, often volume is larger, and frequency of use is low, can not increasingly adapt to the demand of current system, frequency
Rate is high, small high power load is urgently developed.
Invention content
Technical problem to be solved by the invention is to provide a kind of high power load circuits, can reach millimeter wave frequency band,
Small, in the case where absorbing Same Efficieney, volume can reach the 30% of existing traditional circuit.
In order to solve the above technical problems, the technical solution used in the present invention is：
A kind of high power load circuit, including substrate, and make the first broadband connection structure on substrate, second wide
Band connection structure and at least two cell resistances；One end of each cell resistance is connect with the first broadband connection structure, and described the
One broadband connection structure is equipped with input terminal；The other end of each cell resistance is connect with the second broadband connection structure, and described second
Broadband connection structure is equipped with ground terminal.
Further technical solution, the first broadband connection structure, the second broadband connection structure are all made of microstrip line.
Further technical solution, the substrate use semi-conducting material, resistance to be made as nichrome resistance.
The number of further technical solution, the cell resistance is 4.
Further technical solution, the cell resistance are parallel arrangement.
It is using advantageous effect caused by above-mentioned technical proposal：The broadband connection structure of the present invention uses traveling wave circuit
Theory connects individual unit resistance, after power input, by broadband connection structure by signal decile, per all the way
Power absorption is carried out via cell resistance, the heterogeneity phantom of each resistance is uniform so that the utilization rate of resistance is high, to reduce
The volume of resistance.The reduction of resistance volume makes the equivalent electrical length of resistance be much smaller than millimetre wavelength, reduces the high frequency of resistance
Ghost effect makes power termination still keep preferable standing wave horizontal to millimeter wave；Using the broadband connection structure of traveling wave principle, close
Reason design resistance front-end and back-end length of transmission line keeps the propagation phase velocity of each unit consistent with width, and power signal is transmitted always
Step by step by resistance absorption in line transmission process, achieve the effect that expanded circuit bandwidth, the number of cell resistance are determined by absorbed power
Fixed, when the absorbed power needed is bigger, the usage quantity of cell resistance is more.The parameter of adjustment broadband connection structure can make
Amplitude, phase up to each cell resistance signal is consistent, and the features of the present invention, which is that, can easily carry out multi-wad join.
Description of the drawings
Fig. 1 is the structural schematic diagram of the embodiment of the present invention 1；
Fig. 2 is the schematic diagram that the embodiment of the present invention 1 needs the variable being arranged；
In the accompanying drawings：1, substrate, 2, input terminal, the 3, first broadband connection structure, 4, cell resistance, the 5, second broadband connection
Structure, 6, ground terminal.
Specific implementation mode
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
As shown in Figure 1, a kind of high power load circuit, including substrate 1, and the first broadband being produced on substrate 1 connects
Binding structure 3, the second broadband connection structure 5 and four cell resistances 4.Substrate material can be that any circuit or chip of being suitable for adds
The material of work technique such as uses semi-conducting material, and the material of cell resistance 4 can be any of resistive material, such as nickel chromium triangle
Resistance.One end of each cell resistance 4 is connect with the first broadband connection structure 3, and the first broadband connection structure 3 is equipped with input terminal 2；
The other end of each cell resistance 4 is connect with the second broadband connection structure 5, and the second broadband connection structure 5 is equipped with ground terminal 6.The
One broadband connection structure 3, the second broadband connection structure 5 are all made of microstrip line form.Cell resistance 4 is parallel arrangement.Ground connection
End 6 is grounded by way of through-hole, bonding or welding.Power is from 2 input circuit of input terminal, by broadband connection structure by signal
The quartering, per being absorbed all the way via cell resistance 4, output end is grounded by the second broadband connection structure 5, to be formed
Signal path.
The present invention can realize power cell resistance 4 mean allocation, and to the size of broadband connection structure carry out
Design, it will be able to realize broadband character.The watt level that the size of cell resistance 4 absorbs as needed determines that broadband connects
The size of binding structure needs to carry out design of Simulation, and the size designed is needed to be set as variable in emulation, as shown in Fig. 2,
The length and width of each section microstrip line, such as L1-L8 and W1-W8, the length and width of cell resistance 4 all need to be arranged such as Lr and Wr
Variable.
Claims (2)
1. a kind of high power load circuit, it is characterised in that including substrate (1), and the first broadband for being produced on substrate (1)
Connection structure (3), the second broadband connection structure (5) and at least two cell resistances (4)；One end of each cell resistance (4) with
First broadband connection structure (3) connects, and the first broadband connection structure (3) is equipped with input terminal (2)；Each cell resistance (4)
The other end connect with the second broadband connection structure (5), the second broadband connection structure (5) be equipped with ground terminal (6), Mei Yijie
Micro-strip line length and width L1-L8 and W1-W8 are variables；The length and width Lr and Wr of cell resistance (4) are also variable；Cell resistance (4)
Number be 4, cell resistance (4) be parallel arrangement；First broadband connection structure (3), the second broadband connection structure (5) are equal
Using microstrip line；First broadband connection structure (3) includes four section microstrip lines, and the second broadband connection structure (5) includes four section micro-strips
Line；
First broadband connection structure (3), the second broadband connection structure (5) use traveling wave circuit theory, and each cell resistance is connected
It picks up and, after power input, by broadband connection structure by signal decile, per all the way via cell resistance progress power suction
It receives, the heterogeneity phantom of each resistance is uniform；Design resistance front-end and back-end length of transmission line and width make each cell resistance
Spread speed is consistent.
2. a kind of high power load circuit according to claim 1, it is characterised in that the substrate (1) uses semiconductor material
Material, resistance are made as nichrome resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510015591.4A CN104505566B (en) | 2015-01-13 | 2015-01-13 | A kind of high power load circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510015591.4A CN104505566B (en) | 2015-01-13 | 2015-01-13 | A kind of high power load circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104505566A CN104505566A (en) | 2015-04-08 |
| CN104505566B true CN104505566B (en) | 2018-11-06 |
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ID=52947299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510015591.4A Active CN104505566B (en) | 2015-01-13 | 2015-01-13 | A kind of high power load circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104505566B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114217195B (en) * | 2021-11-23 | 2024-03-12 | 河北博威集成电路有限公司 | Power device transmission parameter de-embedding device and load traction test system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4310812A (en) * | 1980-08-18 | 1982-01-12 | The United States Of America As Represented By The Secretary Of The Army | High power attenuator and termination having a plurality of cascaded tee sections |
| CN101699650A (en) * | 2009-10-16 | 2010-04-28 | 电子科技大学 | High-frequency large-power microwave thin film resistor |
| CN204348877U (en) * | 2015-01-13 | 2015-05-20 | 河北博威集成电路有限公司 | A kind of high power load circuit |
-
2015
- 2015-01-13 CN CN201510015591.4A patent/CN104505566B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4310812A (en) * | 1980-08-18 | 1982-01-12 | The United States Of America As Represented By The Secretary Of The Army | High power attenuator and termination having a plurality of cascaded tee sections |
| CN101699650A (en) * | 2009-10-16 | 2010-04-28 | 电子科技大学 | High-frequency large-power microwave thin film resistor |
| CN204348877U (en) * | 2015-01-13 | 2015-05-20 | 河北博威集成电路有限公司 | A kind of high power load circuit |
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| Publication number | Publication date |
|---|---|
| CN104505566A (en) | 2015-04-08 |
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