CN104501839A - Photoelectric detector - Google Patents
Photoelectric detector Download PDFInfo
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- CN104501839A CN104501839A CN201410843652.1A CN201410843652A CN104501839A CN 104501839 A CN104501839 A CN 104501839A CN 201410843652 A CN201410843652 A CN 201410843652A CN 104501839 A CN104501839 A CN 104501839A
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- photoelectric detection
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Abstract
The invention discloses a photoelectric detector and relates to the technical field of photoelectricity. The photoelectric detector requires 3.3V voltage and comprises a signal detection circuit, the signal detection circuit is connected with a light-emitting diode, a photosensitive diode and a signal amplification circuit, and the signal amplification circuit is connected with a waveform shaping circuit which is connected with a single chip microcomputer. Light emitted by the light-emitting diode is transmitted through fingers to be absorbed and attenuated by blood finger tissues and then received by the photosensitive diode, and signals are acquired by a pulse signal pick-up circuit, amplified by the amplification circuit, processed by the waveform shaping circuit and finally displayed by the single chip microcomputer. Therefore, the problem that feeble signals are easily interfered by external electromagnetic signals is solved, and the influence of background light is eliminated.
Description
Technical field
The present invention relates to field of photoelectric technology, be specifically related to a kind of photoelectric detection system.
Background technology
Light signal is transformed into electric signal by Photoelectric Detection exactly, so that treatment and analysis, adopt photoelectricity testing part, as PD, PMT, APD, electric signal is converted to Deng light signal, Authorization Notice No. is CN201020505309.3, load is replaceable mode on depopulated helicopter machine, adopt the one in Visible Light Camera, thermal infrared imager or ultraviolet imager according to the demand of detection, camera is installed on machine among stable platform, but, due to very low by photosensitive device output current, be easily subject to the interference of external electromagnetic signal; Because light intensity change is much fainter than the change of bias light, the disturbing factor of bias light is very large.
Summary of the invention
The object of the present invention is to provide the photoelectric detection system that a kind of measuring accuracy is high.
The technical scheme of technical solution problem of the present invention is: a kind of photoelectric detection system, the voltage provided needed for described photoelectric detection system is 5V, comprise signal deteching circuit, described signal deteching circuit is connected with photon detector and thermal detector, described signal deteching circuit is connected with light signal switching levels circuit and thermocouple temperature sensor, described light signal switching levels circuit and thermocouple temperature sensor are all connected with signal amplification circuit, described signal amplification circuit is connected with waveform shaping circuit, and described waveform shaping circuit is connected with single-chip microcomputer.
As further improvement, described signal amplification circuit comprises low-pass amplifier circuit and two-stage amplifier circuit.
As further improvement, described single-chip microcomputer is connected with nokio liquid crystal.
As further improvement, described light emitting diode is connected with driving circuit.
As further improvement, the voltage provided needed for described driving circuit is 5V.
Beneficial effect: in the present invention, signal is received by photon detector and thermal detector, and by photoelectric detective circuit to signals collecting, and pass through the conversion of light signal switching levels circuit and thermocouple temperature sensor, obtain corresponding electric signal, amplified by signal through amplifying circuit, waveform shaping circuit processes signal, is displayed it by single-chip microcomputer, solve the problem that feeble signal is easily subject to the interference of external electromagnetic signal, eliminate the impact of bias light; Signal amplification circuit comprises low-pass amplifier circuit and two-stage amplifier circuit, two step process are carried out to signal, ensure the easy identifying processing of signal after amplifying, described single-chip microcomputer is connected with nokio liquid crystal, low price, and display effect is good, simple to operation, easy observation, light emitting diode is connected with driving circuit, ensures the stability of lumination of light emitting diode.
Accompanying drawing explanation
Fig. 1 is schematic diagram of the present invention.
Fig. 2 is the schematic diagram of photoelectric detective circuit in the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further details.As shown in Figure 1: a kind of photoelectric detection system, the voltage provided needed for described photoelectric detection system is 5V, as shown in Figure 2, comprise signal deteching circuit, described signal deteching circuit is connected with photon detector and thermal detector, described signal deteching circuit is connected with light signal switching levels circuit and thermocouple temperature sensor, described light signal switching levels circuit and thermocouple temperature sensor are all connected with signal amplification circuit, described signal amplification circuit is connected with waveform shaping circuit, described waveform shaping circuit is connected with single-chip microcomputer, signal is received by photon detector and thermal detector, and by photoelectric detective circuit to signals collecting, and pass through the conversion of light signal switching levels circuit and thermocouple temperature sensor, obtain corresponding electric signal, through amplifying circuit, signal is amplified, waveform shaping circuit processes signal, displayed it by single-chip microcomputer, solve the problem that feeble signal is easily subject to the interference of external electromagnetic signal, eliminate the impact of bias light.
Light signal switching levels circuit: based on photoelectric commutator is the equipment that one is similar to base band MODEM (digital modems), and base band MODEM is optical fiber special line unlike what access, is light signal.
Thermocouple temperature sensor: thermocouple temperature sensor utilizes the resistance value of conductor or semiconductor to vary with temperature and the principle changed carries out a kind of sensor temperature meter of thermometric.Thermal resistance temperature sensor is divided into metal fever resistance and the large class of semiconductor thermistor two.Thermal resistance is widely used in the temperature measured within the scope of-200 ~+850 ° of C, and under a few cases, low temperature can be surveyed to 1K, and high temperature reaches 1000 ° of C.Thermal resistance sensor is made up of thermal resistance, connection wire and Displaying Meter, and thermal resistance also can be connected with temperature transmitter, is that standard current signal exports by temperature transition
Photoelectric detective circuit principle: infrared receiving diode can produce electric energy under the irradiation of infrared light, single diode can produce O.4 V voltage, 0.5 mA electric current.BPW83 type infrared receiving diode and IR333 type infrared-emitting diode operation wavelength are all 940 nm, and in finger folder, put relative with infrared-emitting diode of infrared receiving diode obtains best directional property.Electric current in infrared-emitting diode is larger, and emission angle is less, and the emissive porwer of generation is larger.
The principle of low-pass filter circuit: by human pulse after exercise the highest number reach 240 beats/min of calculating to design low-pass amplifier, it is made up of IC2A and C04 etc., corner frequency is determined by R07, C04, R08 and C05, and enlargement factor is determined by the ratio of R08 and R06.
Two-stage amplifier circuit principle: Rpll is in order to the enlargement factor of adjustment System, and C06 is in order to prevent amplifier self-excitation.Employing secondary amplifies, zero point drift not clearly, at O.1 about V.So the threshold voltage designs of comparer is become O.25 V, to guarantee filtering interference signals.Adopt the benefit of comparer to be effectively to overcome the impact that zero point drift causes, improve the accuracy measured.
Waveform shaping circuit principle: IC3A is CD4528 type one shot multivibrator, and effective pulsewidth is that its width of 0.05 s. is determined by R22 and C20.IC3B also forms an one shot multivibrator, and pulsewidth is 240ms.D2, Dl and T3 etc. form a rejection gate, only have C, and when E 2 is low level, signal amplifier complete machine exports and is only high level.The object designing this circuit is to export a burst pulse at output terminal, and within the time determined by R13 and C07, all will can not disturb output by any signal.
It should be noted that described signal amplification circuit comprises low-pass amplifier circuit and two-stage amplifier circuit, two step process are carried out to signal, ensure the easy identifying processing of signal after amplifying, described single-chip microcomputer is connected with charactron, low price, simple to operation, easily observe.
In the present embodiment, described light emitting diode is connected with driving circuit, and ensure the stability of lumination of light emitting diode, the voltage provided needed for described driving circuit is 5V.
Based on above-mentioned, signal is received by photon detector and thermal detector, and by photoelectric detective circuit to signals collecting, and pass through the conversion of light signal switching levels circuit and thermocouple temperature sensor, obtain corresponding electric signal, through amplifying circuit, signal is amplified, waveform shaping circuit processes signal, displayed it by single-chip microcomputer, solve the problem that feeble signal is easily subject to the interference of external electromagnetic signal, eliminate the impact of bias light.
The foregoing is only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every utilize instructions of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (5)
1. a photoelectric detection system, the voltage provided needed for described photoelectric detection system is 3.3V, it is characterized in that: comprise signal deteching circuit, described signal deteching circuit is connected with photon detector and thermal detector, described signal deteching circuit is connected with light signal switching levels circuit and thermocouple temperature sensor, described light signal switching levels circuit and thermocouple temperature sensor are all connected with signal amplification circuit, described signal amplification circuit is connected with waveform shaping circuit, and described waveform shaping circuit is connected with single-chip microcomputer.
2. a kind of photoelectric detection system according to claim 1, is characterized in that: described signal amplification circuit comprises low-pass filter circuit and two-stage amplifier circuit.
3. a kind of photoelectric detection system according to claim 2, is characterized in that: described single-chip microcomputer is connected with nokio liquid crystal.
4. a kind of photoelectric detection system according to claim 1, is characterized in that: described light emitting diode is connected with driving circuit.
5. a kind of photoelectric detection system according to claim 1, is characterized in that: the voltage provided needed for described driving circuit is 5V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410843652.1A CN104501839A (en) | 2014-12-30 | 2014-12-30 | Photoelectric detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410843652.1A CN104501839A (en) | 2014-12-30 | 2014-12-30 | Photoelectric detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104501839A true CN104501839A (en) | 2015-04-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410843652.1A Pending CN104501839A (en) | 2014-12-30 | 2014-12-30 | Photoelectric detector |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104875512A (en) * | 2015-05-29 | 2015-09-02 | 江苏海大印染机械有限公司 | Printing and dyeing apparatus with photoelectric strip deviation detector |
-
2014
- 2014-12-30 CN CN201410843652.1A patent/CN104501839A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104875512A (en) * | 2015-05-29 | 2015-09-02 | 江苏海大印染机械有限公司 | Printing and dyeing apparatus with photoelectric strip deviation detector |
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Application publication date: 20150408 |
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| RJ01 | Rejection of invention patent application after publication |