CN104480451A - Device for growing graphene in large areas - Google Patents
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- CN104480451A CN104480451A CN201410766516.7A CN201410766516A CN104480451A CN 104480451 A CN104480451 A CN 104480451A CN 201410766516 A CN201410766516 A CN 201410766516A CN 104480451 A CN104480451 A CN 104480451A
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Abstract
The invention relates to the technical field of graphene growth devices and particularly relates to a device for growing graphene in large areas. The device comprises a quartz tube, a vent cavity and a metal substrate, wherein the vent cavity is internally hollow and is of a spiral cylindrical structure, the shape of the metal substrate is matched with that of the vent cavity, the metal substrate is spirally crimped along the inner surface of the vent cavity, the end part of the innermost ring of the vent cavity is fixedly connected with the end part of the innermost ring of the metal substrate, an air inlet is formed in each of one side of the innermost ring and the same side of the outermost ring of the vent cavity, a plurality of air outlet holes are formed in the inner surface of the vent cavity, the quartz tube sleeves outside the vent cavity and wraps the entire vent cavity. The device has the beneficial effects that the structure is simple, the crimping growth of graphene in the large areas is facilitated, the space is saved, furthermore graphene evenly grows and the yield is increased.
Description
Technical field
The present invention relates to graphene growth equipment technical field, particularly relate to a kind of device of large area deposition Graphene.
Background technology
Graphene is the hexagonal honey comb structure that carbon atom forms based on sp2 hydridization, the only two dimensional crystal of an atomic layers thick.2004, the people such as Andre Geim and Konstantin Novoselov found the single-layer graphene of stable existence, also obtained Nobel Prize in physics in 2010 because of its initiative work in Graphene.In recent years, Graphene all shows many stem-winding performances and potential application prospect in fields such as microelectronics, quantum physics, material, chemistry, has attracted the extensive concern of scientific circles and industry member.Graphene has excellent power, heat, the character such as optical, electrical.Electronic mobility under Graphene normal temperature, more than 15000cm2/Vs, exceedes carbon nanotube and silicon crystal, and resistivity only about 10
-6Ω cm, lower than copper or silver is the material that resistivity is minimum in the world at present.And its up to 97.7% all wave band transmittance be that other electro-conductive materials are difficult to be equal to.Chemical vapour deposition (CVD) method of current industrial usual employing metal base is as preparing Graphene.But also technology difficulty is also existed for large-sized graphene growth, lacks a kind of growing apparatus of Graphene large area deposition.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of device of large area deposition Graphene, overcome that graphite is uneven in conventional growth device gas distribution, preparation amount is little, production capacity is low, defect.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of device of large area deposition Graphene, comprise silica tube, ventilation cavity, metal base, described ventilation cavity inner hollow, described ventilation cavity is spiral columnar structure, the shape of described metal base and the mating shapes of described ventilation cavity, described metal base is along described ventilation cavity inner surface helix-coil, the end of described ventilation cavity innermost circle and the end winding support of described metal base innermost circle link together, inlet mouth is equipped with on the side of the innermost circle of described ventilation cavity and on the same side of outmost turns, the internal surface of described ventilation cavity is provided with multiple production well, it is external that described quartz pipe sleeve is located at described venting cavity, envelope whole described ventilation cavity.
The invention has the beneficial effects as follows: structure is simple, is conducive to big area rolling growing graphene, save space, simultaneously graphene growth evenly, improve output.
On the basis of technique scheme, the present invention can also do following improvement.
Further, described production well is evenly distributed on the internal surface of described ventilation cavity, and described production well is through hole.
Adopt the beneficial effect of above-mentioned further scheme to be: production well becomes array to be uniformly distributed, and reactant gases can be given vent to anger evenly, make metal substrate surface form uniform atmosphere surrounding, be conducive to graphene uniform growth.
Further, the interval between each circle of described ventilation cavity is more than or equal to 1mm.
The beneficial effect of above-mentioned further scheme is adopted to be: suitable distance is conducive to placing metal base, makes abundant growing graphene in metal base.
Further, the distance between described ventilation cavity inner surface and outside surface is 1 ~ 2mm.
Adopt the beneficial effect of above-mentioned further scheme to be: ventilation cavity adopts appropriate thickness, for metal base provides the atmosphere surrounding of suitable graphene growth, be conducive to Graphene fast all with grow.
Further, the internal diameter of described silica tube is greater than the external diameter 0.1 ~ 50mm of described ventilation cavity outmost turns.
The beneficial effect of above-mentioned further scheme is adopted to be: the internal diameter of silica tube, slightly larger than the external diameter of ventilation cavity outmost turns, makes venting cavity physical efficiency put into silica tube, leaves comparatively small―gap suture simultaneously and between silica tube.
Further, the axial length of described ventilation cavity is greater than the axial length of described metal base.
The beneficial effect of above-mentioned further scheme is adopted to be: to make ventilation cavity can cover metal base completely, be conducive to graphene growth.
Further, described ventilation cavity is made up of quartz or corundum.
Adopt the beneficial effect of above-mentioned further scheme to be: quartz or corundum high temperature resistant, ensure that Graphene grow in hot environment and device can not be caused to be out of shape and damage, along the work-ing life of device.
Accompanying drawing explanation
Fig. 1 is the structural representation that the device of a kind of large area deposition Graphene of the present invention takes off silica tube;
Fig. 2 is the cross sectional representation of the device of a kind of large area deposition Graphene of the present invention.
In accompanying drawing, the list of parts representated by each label is as follows:
1, to ventilate cavity, 2, production well, 3, inlet mouth, 4, metal base, 5, silica tube.
Embodiment
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1, shown in Fig. 2, the present invention is used for the growth of rolling graphite, comprises silica tube 5, ventilation cavity 1, metal base 4.Described ventilation cavity 1 is made up of quartz or corundum, described ventilation cavity 1 inner hollow, and described ventilation cavity 1 is spiral columnar structure, namely ventilation cavity 1 one end is fixed, the other end carries out circulation winding within a predetermined distance, and circulation is wound into multi-turn, and the interval between every two adjacent rings is equal.Distance between described ventilation cavity 1 internal surface and outside surface is 1 ~ 2mm, and the thickness of cavity 1 of namely ventilating is 1 ~ 2mm, and the interval between each circle of described ventilation cavity 1 is more than or equal to 1mm, and the interval namely between two adjacent rings is more than or equal to 1mm.For catalytic substrate or metal base 4 thickness larger, suitably increase the interval between the every two adjacent rings of ventilation cavity 1 as the case may be.As metal base 4 thickness be less than 1mm time, the interval between ventilation cavity 1 two adjacent rings is more than or equal to 1mm; As metal base 4 thickness be greater than 1mm time, the minimum interval between ventilation cavity 1 two adjacent rings will suitably increase.Metal base 4 is used for supporting and being separated Graphene, the shape of described metal base 4 and the mating shapes of described ventilation cavity 1, described metal base 4 is along described ventilation cavity 1 internal surface helix-coil, and namely metal base 4 is between ventilation cavity 1 two adjacent rings.
As shown in Figure 1 and Figure 2, the axial length of ventilation cavity 1 is greater than the axial length of described metal base 4, namely ventilate the width of cavity 1 wider than the width of metal base 4, thus make metal base 4 completely between ventilation cavity 1 two adjacent rings, full and uniform contacts with gas.The end of described ventilation cavity 1 innermost circle and the end winding support of described metal base 4 innermost circle link together.The side of innermost circle of described ventilation cavity 1 and the same side of outmost turns are equipped with inlet mouth 3, and gas is inputted by inlet mouth 3.The internal surface of described ventilation cavity 1 is provided with multiple production well 2, and described production well 2 is evenly distributed on the internal surface of described ventilation cavity 1, and production well 2 can adopt array to be uniformly distributed, and described production well 2 is through hole.Gas is evenly discharged from production well 2, makes metal base 4 growing graphene in uniform atmosphere surrounding.Overcome interlayer gas distribution in the growth of current rolling and control difficulty, the shortcoming that gas distribution is uneven.Silica tube 5 is hollow cylindrical dress, described silica tube 5 is set in outside described ventilation cavity 1, envelope whole described ventilation cavity 1, the internal diameter of described silica tube 5 is greater than the external diameter 0.1 ~ 50mm of described ventilation cavity 1 outmost turns, and the external diameter of described ventilation cavity 1 outmost turns is greater than 50mm.The internal diameter of silica tube 5, slightly larger than the external diameter of ventilation cavity 1 outmost turns, makes ventilation cavity 1 can put in silica tube 5 and carries out growth response.
During use, gas is passed into by inlet mouth 3, gas enters into ventilation cavity 1, given vent to anger by the production well 2 on ventilation cavity 1 internal surface again, metal base 4 and production well 2 gas out fully all with contact, metal base 4 is in all and atmosphere surrounding in, be conducive to the homoepitaxial of Graphene, growth efficiency is high.
The ventilation cavity 1 of this device and the curling number of turns of metal base 4 are determined according to the internal diameter of silica tube 5, also will ensure that metal base 4 innermost circle causes and can not reply deformation simultaneously.The structure of this device is simple, and change very little to existing technological process, be conducive to the manufacturing carrying out Graphene in existing technique, can reuse, the Graphene produced is without large-area fold.When utilizing this device growing graphene, tinsel has the feature of periodically local deformation fold in heating and cooling process, can as the position of follow-up cutting sheets, and unit sheet does not have obvious fold.And often enclosing the surperficial air inlet uniformity of metal base 4, improve the shortcoming that between current rolling grown layer, air inlet is uneven, this device can produce high-quality graphene film.Compared with existing planar growth sheet width D (diameter of D silica tube 5), length increases to n π D, and n is the coiled material number of turns, and D is individual pen diameter, considerably increases production efficiency, saves production cost.
Embodiment one:
When the internal diameter of silica tube 5 is 100mm, the thickness of silica tube 5 tube wall is 2mm; The external diameter of ventilation cavity 1 outmost turns adopted is 80mm, and the number of turns is 4 circles, and the thickness of ventilation cavity 1 is 2mm, and the spacing between ventilation cavity 1 two adjacent rings is 1mm; Metal base 4 adopts the Copper Foil of width 30cm, and the width of ventilation cavity 1 adopts 32cm.By wide be 30cm, the long Copper Foil for 56cm is involved in ventilation cavity 1, and the mode of being involved in can adopt the soft board suitable with cavity 1 thickness of ventilating to be layered on below Copper Foil, Copper Foil is rolled into web-like, is then imported in ventilation cavity 1 by Copper Foil.The ventilation cavity 1 being wrapped in Copper Foil is positioned over the constant temperature zone of silica tube 5, then carries out chemical vapor deposition graphene film.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. the device of a large area deposition Graphene, it is characterized in that, comprise silica tube (5), ventilation cavity (1), metal base (4), described ventilation cavity (1) inner hollow, described ventilation cavity (1) is spiral columnar structure, the shape of described metal base (4) and the mating shapes of described ventilation cavity (1), described metal base (4) is along described ventilation cavity (1) internal surface helix-coil, the described end of ventilation cavity (1) innermost circle and the end winding support of described metal base (4) innermost circle link together, the side of innermost circle of described ventilation cavity (1) and the same side of outmost turns are equipped with inlet mouth (3), the internal surface of described ventilation cavity (1) is provided with multiple production well (2), described silica tube (5) is set in described ventilation cavity (1) outward, envelope whole described ventilation cavity (1).
2. the device of a kind of large area deposition Graphene according to claim 1, is characterized in that, described production well (2) is evenly distributed on the internal surface of described ventilation cavity (1), and described production well (2) is through hole.
3. the device of a kind of large area deposition Graphene according to claim 1, is characterized in that, the interval between each circle of described ventilation cavity (1) is more than or equal to 1mm.
4. the device of a kind of large area deposition Graphene according to claim 1, is characterized in that, the distance of described ventilation cavity (1) between internal surface and outside surface is 1 ~ 2mm.
5. the device of a kind of large area deposition Graphene according to claim 1, is characterized in that, the internal diameter of described silica tube (5) is greater than the external diameter 0.1 ~ 50mm of described ventilation cavity (1) outmost turns.
6. the device of a kind of large area deposition Graphene according to claim 1, is characterized in that, the axial length of described ventilation cavity (1) is greater than the axial length of described metal base (4).
7. the device of a kind of large area deposition Graphene according to any one of claim 1 to 6, is characterized in that, described ventilation cavity (1) is made up of quartz or corundum.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410766516.7A CN104480451B (en) | 2014-12-12 | 2014-12-12 | Device for growing graphene in large areas |
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| CN201410766516.7A CN104480451B (en) | 2014-12-12 | 2014-12-12 | Device for growing graphene in large areas |
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| CN104480451A true CN104480451A (en) | 2015-04-01 |
| CN104480451B CN104480451B (en) | 2017-01-18 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108149223A (en) * | 2017-12-27 | 2018-06-12 | 长沙新材料产业研究院有限公司 | A kind of MPCVD cavity body structures and MPCVD equipment |
| CN115821209A (en) * | 2022-10-21 | 2023-03-21 | 航天材料及工艺研究所 | Device for efficiently preparing refractory metal coating on inner surface and outer surface of thrust chamber body of engine |
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| JPH0271513A (en) * | 1988-09-06 | 1990-03-12 | Tel Sagami Ltd | Semiconductor manufacturing apparatus |
| CN103103493A (en) * | 2012-11-07 | 2013-05-15 | 山东鑫汇铜材有限公司 | Production device of graphene copper wire |
| CN103451622A (en) * | 2012-05-31 | 2013-12-18 | 李雪松 | Apparatus and method for the synthesis of graphene by chemical vapor deposition |
| CN204325492U (en) * | 2014-12-12 | 2015-05-13 | 重庆墨希科技有限公司 | A kind of device of large area deposition Graphene |
-
2014
- 2014-12-12 CN CN201410766516.7A patent/CN104480451B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0271513A (en) * | 1988-09-06 | 1990-03-12 | Tel Sagami Ltd | Semiconductor manufacturing apparatus |
| CN103451622A (en) * | 2012-05-31 | 2013-12-18 | 李雪松 | Apparatus and method for the synthesis of graphene by chemical vapor deposition |
| CN103103493A (en) * | 2012-11-07 | 2013-05-15 | 山东鑫汇铜材有限公司 | Production device of graphene copper wire |
| CN204325492U (en) * | 2014-12-12 | 2015-05-13 | 重庆墨希科技有限公司 | A kind of device of large area deposition Graphene |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108149223A (en) * | 2017-12-27 | 2018-06-12 | 长沙新材料产业研究院有限公司 | A kind of MPCVD cavity body structures and MPCVD equipment |
| CN108149223B (en) * | 2017-12-27 | 2020-08-07 | 长沙新材料产业研究院有限公司 | MPCVD cavity structure and MPCVD equipment |
| CN115821209A (en) * | 2022-10-21 | 2023-03-21 | 航天材料及工艺研究所 | Device for efficiently preparing refractory metal coating on inner surface and outer surface of thrust chamber body of engine |
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| CN104480451B (en) | 2017-01-18 |
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