CN104467706A - Light beam excitation type logic amplification circuit - Google Patents

Light beam excitation type logic amplification circuit Download PDF

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Publication number
CN104467706A
CN104467706A CN201410687555.8A CN201410687555A CN104467706A CN 104467706 A CN104467706 A CN 104467706A CN 201410687555 A CN201410687555 A CN 201410687555A CN 104467706 A CN104467706 A CN 104467706A
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CN
China
Prior art keywords
nand gate
polar capacitor
resistance
positive pole
power amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410687555.8A
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Chinese (zh)
Inventor
付雯华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chengdu Simao Technology Co Ltd
Original Assignee
Chengdu Simao Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chengdu Simao Technology Co Ltd filed Critical Chengdu Simao Technology Co Ltd
Priority to CN201410687555.8A priority Critical patent/CN104467706A/en
Publication of CN104467706A publication Critical patent/CN104467706A/en
Priority to CN201510316261.9A priority patent/CN105182088A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The invention discloses a light beam excitation type logic amplification circuit. The light beam excitation type logic amplification circuit is characterized by mainly consisting of a power amplifier P, an NAND gate IC1, an NAND gate IC2, an NAND gate IC3, a polar capacitor C1, a resistor R1, a polar capacitor C2 and the like, wherein the negative pole of the polar capacitor C1 is connected with a positive pole input end of the power amplifier P, the positive pole of the polar capacitor C1 is grounded through a photodiode D1, one end of the resistor R1 is connected with the positive pole of the polar capacitor C1, the other end of the resistor R1 is grounded through a diode D2, the positive pole of the polar capacitor C2 is connected with a connecting point between the resistor R1 and the diode D2, and the negative pole of the polar capacitor C2 is grounded. The light beam excitation type logic amplification circuit is simple in whole structure and very convenient to manufacture and use and meanwhile can effectively reduce radio-frequency interference of the circuit and radio-frequency interference in the outside.

Description

A kind of beam excitation formula logic amplifying circuit
Technical field
The present invention relates to a kind of amplifying circuit, specifically refer to a kind of beam excitation formula logic amplifying circuit.
Background technology
At present, widely, relevant voltage signal, current signal and other pulse signals are mainly carried out power amplification by according to demand in the utilization of power amplification circuit.But, traditional power amplification circuit is after carrying out power drive amplification, and not only the attenuation amplitude of its amplifying signal is comparatively large, but also can be subject to outside electromagnetic interference, and then make amplifying signal performance comparatively unstable, serious constrains using and promoting of its profound level.
Summary of the invention
The object of the invention is to overcome the defect of the comparatively large and amplified signal unstable properties of signal attenuation amplitude after the amplification that current power amplification circuit exists, a kind of beam excitation formula logic amplifying circuit is provided.
Object of the present invention is achieved through the following technical solutions: a kind of beam excitation formula logic amplifying circuit, primarily of power amplifier P, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P, the polar capacitor C1 of positive pole ground connection after optical diode D1, one end is connected with the positive pole of polar capacitor C1, the resistance R1 of other end ground connection after diode D2, positive pole is connected with the tie point of diode D2 with resistance R1, the polar capacitor C2 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R2 that the other end is connected with the electrode input end of power amplifier P, be serially connected in the resistance R3 between the negative input of power amplifier P and output, one end is connected with the output of NAND gate IC1, the resistance R4 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the output of NAND gate IC2, the electric capacity C3 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C2, the resistance R5 that the other end is connected with the negative input of NAND gate IC2 forms, the electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P, and its output is connected with the electrode input end of NAND gate IC2, and the electrode input end of NAND gate IC3 is connected with the output of power amplifier P.
The present invention comparatively prior art compares, and has the following advantages and beneficial effect:
(1) overall structure of the present invention is comparatively simple, and it makes and very easy to use.Meanwhile, the present invention can also effectively reduce circuit self and extraneous radio frequency interference.
(2) the present invention can guarantee that larger decay can not occur the signal after it amplifies, thus can guarantee the quality and performance of amplifying signal.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present invention.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, a kind of beam excitation formula logic amplifying circuit of the present invention, primarily of power amplifier P, NAND gate IC1, NAND gate IC2, NAND gate IC3, polar capacitor C1, polar capacitor C2, optical diode D1, diode D2, resistance R1, resistance R2, resistance R3, resistance R4, and resistance R5 forms.
During connection, the negative pole of polar capacitor C1 is connected with the electrode input end of power amplifier P, and its positive pole is connected with the N pole of optical diode D1, the P pole then ground connection of optical diode D1.One end of resistance R1 is connected with the positive pole of polar capacitor C1, and its other end is ground connection after diode D2.
The positive pole of described polar capacitor C2 is connected with the tie point of diode D2 with resistance R1, its minus earth; One end of resistance R2 is connected with the negative input of NAND gate IC1, and its other end is connected with the electrode input end of power amplifier P; Between the negative input that resistance R3 is then serially connected in power amplifier P and output.
One end of resistance R4 is connected with the output of NAND gate IC1, and its other end is connected with the negative input of NAND gate IC3; Meanwhile, the positive pole of electric capacity C3 is connected with the output of NAND gate IC2, and its negative pole is also connected with the negative input of NAND gate IC3.One end of described resistance R5 is connected with the positive pole of polar capacitor C2, and its other end is connected with the negative input of NAND gate IC2.
The electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P, and its output is connected with the electrode input end of NAND gate IC2, and the electrode input end of NAND gate IC3 is connected with the output of power amplifier P.The output of NAND gate IC3 is then output of the present invention.
For guaranteeing result of use, the capacitance of this polar capacitor C1 and polar capacitor C2 is 10 μ F, and the capacitance of electric capacity C3 is then 5 μ F.Meanwhile, the resistance of resistance R1, resistance R2, resistance R3 is 20K Ω, and the resistance of resistance R4 is 15 K Ω, and the resistance of resistance R5 is 30 K Ω.
As mentioned above, just the present invention can well be realized.

Claims (1)

1. a beam excitation formula logic amplifying circuit, it is characterized in that, primarily of power amplifier P, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P, the polar capacitor C1 of positive pole ground connection after optical diode D1, one end is connected with the positive pole of polar capacitor C1, the resistance R1 of other end ground connection after diode D2, positive pole is connected with the tie point of diode D2 with resistance R1, the polar capacitor C2 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R2 that the other end is connected with the electrode input end of power amplifier P, be serially connected in the resistance R3 between the negative input of power amplifier P and output, one end is connected with the output of NAND gate IC1, the resistance R4 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the output of NAND gate IC2, the electric capacity C3 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C2, the resistance R5 that the other end is connected with the negative input of NAND gate IC2 forms, the electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P, and its output is connected with the electrode input end of NAND gate IC2, and the electrode input end of NAND gate IC3 is connected with the output of power amplifier P.
CN201410687555.8A 2014-11-25 2014-11-25 Light beam excitation type logic amplification circuit Pending CN104467706A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201410687555.8A CN104467706A (en) 2014-11-25 2014-11-25 Light beam excitation type logic amplification circuit
CN201510316261.9A CN105182088A (en) 2014-11-25 2015-06-11 Amplified field intensity detection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410687555.8A CN104467706A (en) 2014-11-25 2014-11-25 Light beam excitation type logic amplification circuit

Publications (1)

Publication Number Publication Date
CN104467706A true CN104467706A (en) 2015-03-25

Family

ID=52913198

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201410687555.8A Pending CN104467706A (en) 2014-11-25 2014-11-25 Light beam excitation type logic amplification circuit
CN201510316261.9A Withdrawn CN105182088A (en) 2014-11-25 2015-06-11 Amplified field intensity detection circuit

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201510316261.9A Withdrawn CN105182088A (en) 2014-11-25 2015-06-11 Amplified field intensity detection circuit

Country Status (1)

Country Link
CN (2) CN104467706A (en)

Also Published As

Publication number Publication date
CN105182088A (en) 2015-12-23

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PB01 Publication
C05 Deemed withdrawal (patent law before 1993)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20150325