CN104466676A - Small-sized semiconductor laser and preparing method thereof - Google Patents
Small-sized semiconductor laser and preparing method thereof Download PDFInfo
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- CN104466676A CN104466676A CN201310432868.4A CN201310432868A CN104466676A CN 104466676 A CN104466676 A CN 104466676A CN 201310432868 A CN201310432868 A CN 201310432868A CN 104466676 A CN104466676 A CN 104466676A
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Abstract
The invention provides a small-sized semiconductor laser. The cycle size of the semiconductor laser is smaller than or equal to 150 microns, and the semiconductor laser is of a pure strip structure or a shoulder structure. A preparing method of the small-sized semiconductor laser comprises the following steps that an ohmic contact layer is prepared on a semiconductor laser chip, and a tube core graph with the cycle size being smaller than or equal to 150 microns is prepared through photoetching and etching; the P face of the chip with the prepared ohmic contact layer is protected; a substrate of the chip is thinned; the semiconductor laser chip is cleaned and then put in an evaporation platform; a P face electrode is subjected to vapor deposition, and a frame is overturned to conduct vapor deposition on an N face electrode after vapor deposition of the P face electrode is completed. According to the small-sized semiconductor laser and the preparing method thereof, the graph cycle is reduced to be 150 microns from 200 microns, and the yield is 1.3 times of the original yield. The small-sized semiconductor laser is simple in preparation process step and capable of saving raw materials and labor hours for production, meanwhile, the problems of P face scratching, pollution and the like can be solved, and thus the P face quality is improved.
Description
Technical field
The present invention relates to a kind of small size semiconductor laser and preparation method thereof, belong to the technical field of low power semiconductor laser.
Technical background
Current double heterojunction plane stripe-geometry semiconductor laser outstanding feature is ridged waveguide structure, and this structure effectively can fulfil the effect of current limit and light constraint.
As a kind of feature, require that semiconductor laser device has fundamental transverse mode vibration, wherein do not have higher order mode to produce.In order to utilize semiconductor laser device to obtain fundamental transverse mode vibration, need restriction ridge width at 4-5 μm or less.So under the prerequisite meeting chip package dimensional requirement, the die artwork cycle can be reduced as much as possible, improve chip yield.
Meanwhile, the ohmic contact of device electrode and Schottky contacts are critical process and the important component part of element manufacturing, have material impact to device performance.The conventional process flow of current preparation P, N electrode is first to chip cleaning, preparation P face Ohm contact electrode, then to p side electrode protection, chip thinning, finally carries out clean, preparation N face Ohm contact electrode to chip again.
Chinese patent document CN102709408A discloses a kind of manufacture method of GaAs base ultra-thin chip, and the preparation technology of its electrode is: first process positive electrode at epitaxial layer evaporation, carry out upper Lasaxing Oilfield to the upper surface formed by epitaxial layer and positive electrode; By substrate attenuation to 100 μm ± 20, under the upper surface that epitaxial layer and positive electrode are formed after wax clean, negative electrode is processed to the lower surface evaporation of substrate.
Chinese patent document CN102570305A discloses a kind of preparation method of silica-based counterfeit gallium arsenide substrate 850nm laser, the preparation technology talking about electrode is: on silicon dioxide insulating layer and electrode window through ray, make titanium platinum electrode, after thinning, make gold germanium nickel electrode at the back side of substrate, complete the preparation of laser.
For ensureing that interface quality all needs strict cleaning before preparing P and N electrode in conventional process flow, and preparing in P electrode subsequent technique quality problems such as easily occurring P electrode pollution, scuffing.But this technique obviously reduces production efficiency, increases cost.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of small size semiconductor laser.
The present invention also provides a kind of preparation method of above-mentioned small size semiconductor laser.Preparation method's flow process for small size semiconductor laser of the present invention is simple, has higher tube core output capacity, ensures the Laser output of firm power simultaneously.
Technical scheme of the present invention is as follows:
A kind of small size semiconductor laser, is characterized in that, periodic dimensions≤150 μm of described semiconductor laser.The cycle of semiconductor laser described herein is the distance on adjacent semiconductor laser between vallum district center.
Preferred according to the present invention, the periodic dimensions of described semiconductor laser is 120-150 μm.
Preferred according to the present invention, the periodic dimensions of described semiconductor laser is 150 μm.
Preferred according to the present invention, described semiconductor laser is pure bar structure: described semiconductor laser, comprise from bottom to top set gradually N face electrode, GaAs substrate, N-type lower limit layer, lower waveguide layer, active area, upper ducting layer and with etching cutoff layer P type upper limiting layer, the upper surface of described etching cutoff layer is provided with vallum shape P type upper limiting layer, described vallum is provided with ohmic contact layer, described P type upper limiting layer is provided with the insulating barrier exposing ohmic contact layer, described insulating barrier and ohmic contact layer are provided with p side electrode.
Preferred according to the present invention, described semiconductor laser is band shoulder structure: the vallum bilateral symmetry of described vallum shape P type upper limiting layer is provided with band shoulder structure.
Preferred according to the present invention, the vallum width of described vallum shape P type upper limiting layer is 4-5 μm.
A preparation method for above-mentioned small size semiconductor laser, comprises step as follows:
(1) on semiconductor laser chip, ohmic contact layer is prepared, through the die artwork of photoetching, etching manufacturing cycle size≤150 μm;
(2) the P face of the complete ohmic contact layer chip of described preparation is protected;
(3) carry out thinning to the substrate of chip;
(4) evaporator is put into after being cleaned by semiconductor laser chip: evaporation p side electrode, translation frame evaporation N face electrode after P electrode evaporation.Obtain small size semiconductor laser of the present invention.
Preferred according to the present invention, in described step (1), the periodic dimensions of described semiconductor laser is 100-150 μm.
Preferred according to the present invention, in described step (1), the periodic dimensions of described semiconductor laser is 150 μm.
Preferred according to the present invention, described semiconductor laser is pure bar structure, and preparation method is as follows:
(1) on gaas substrates successively grown buffer layer, N-type lower limit layer, lower waveguide layer, active area, upper ducting layer, P type upper limiting layer, etching cutoff layer, ohmic contact layer; Adopt photoetching technique, prepare the die artwork of pure bar structure with photoresist on the surface of ohmic contact layer, its figure periodic dimensions≤150 μm; Adopt the mode of wet etching or dry etching, etch downwards at ohmic contact layer, etching depth arrives the surface of etching cutoff layer: on described P type upper limiting layer, etch vallum;
(2) outside vallum district, insulating barrier is prepared;
(3) carry out thinning to the GaAs substrate of chip;
(4) evaporator is put into after being cleaned by semiconductor laser chip: evaporation p side electrode, translation frame evaporation N face electrode after p side electrode evaporation.
Preferred according to the present invention, described semiconductor laser is band shoulder structure, and preparation method is as follows:
(1) on gaas substrates successively grown buffer layer, N-type lower limit layer, lower waveguide layer, active area, upper ducting layer, P type upper limiting layer, etching cutoff layer, ohmic contact layer; Adopt photoetching technique, prepare the die artwork of band shoulder structure with photoresist on the surface of ohmic contact layer, its figure periodic dimensions≤150 μm; Adopt the mode of wet etching or dry etching, etch downwards at ohmic contact layer, etching depth arrives the surface of etching cutoff layer;
(2) insulating barrier outside vallum district is prepared;
(3) carry out thinning to the GaAs substrate of chip;
(4) evaporator is put into after being cleaned by semiconductor laser chip: evaporation p side electrode, translation frame evaporation N face electrode after p side electrode evaporation.
Advantage of the present invention is as follows:
1, the cycle of semiconductor laser of the present invention is little, can the more tube core of output on onesize chip, and output capacity is high.Such as, the figure cycle is reduced to 150 μm by 200 μm, output is about original 1.3 times.
2, the preparation method of semiconductor laser of the present invention, tube core step of preparation process is simple, saves and produces raw materials and labor hour; Reduce the problems such as the scuffing of P face, pollution simultaneously, improve P face quality.
3, the preparation of semiconductor laser of the present invention adopts P/N electrode integrated completing technology, and it is simple and ensure that the quality of chip not only to save a step cleaning, preparation technology.
Accompanying drawing explanation
Fig. 1 is the semiconductor laser structure schematic diagram of the pure bar structure of small size of the present invention;
Fig. 2 is the semiconductor laser structure schematic diagram of small size band of the present invention shoulder structure;
Fig. 3 is the measurement key-drawing to the small size cycle of the present invention, is the figure cycle perpendicular to the distance A between the adjacent vallum central point of vallum orientation measurement two.
In Fig. 1-2,1, p side electrode; 2, ohmic contact layer; 3, vallum shape P type upper limiting layer; 6, P type upper limiting layer, 4, insulating barrier; 5, cutoff layer is etched; 7, upper ducting layer; 8, active area; 9, lower waveguide layer; 10, N-type lower limit layer; 11, GaAs substrate; 12, N face electrode; 13, band shoulder structure; 14, band shoulder structure.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail, but is not limited thereto.
Embodiment 1,
As shown in Figure 1,3.
A kind of small size semiconductor laser, periodic dimensions≤150 μm of described semiconductor laser.
Described semiconductor laser is pure bar structure: described semiconductor laser, comprise from bottom to top set gradually N face electrode 12, GaAs substrate 11, N-type lower limit layer 10, lower waveguide layer 9, active area 8, upper ducting layer 7 and with etching cutoff layer 5 P type upper limiting layer 6, the upper surface of described etching cutoff layer 5 is provided with vallum shape P type upper limiting layer 3, described vallum is provided with ohmic contact layer 2, described P type upper limiting layer is provided with the insulating barrier 4 exposing ohmic contact layer 2, described insulating barrier 4 and ohmic contact layer 2 are provided with p side electrode 1.The vallum width of described vallum shape P type upper limiting layer 3 is 4 μm.
Embodiment 2,
As shown in Figure 2.
A kind of small size semiconductor laser as described in Example 1, its difference is, described semiconductor laser is band shoulder structure: the vallum bilateral symmetry of described vallum shape P type upper limiting layer 3 is provided with band shoulder structure 13,14.The periodic dimensions of described semiconductor laser is 120-150 μm.The vallum width of described vallum shape P type upper limiting layer 3 is 5 μm.
Embodiment 3,
A kind of small size semiconductor laser as described in embodiment 1,2, its difference is, the periodic dimensions of described semiconductor laser is 150 μm.
Embodiment 4,
A preparation method for small size semiconductor laser as described in Example 3, comprises step as follows:
(1) on semiconductor laser chip, prepare ohmic contact layer 2, through photoetching, etch the die artwork that manufacturing cycle is of a size of 150 μm;
(2) the P face of described preparation complete ohmic contact layer 2 chip is protected;
(3) carry out thinning to the substrate of chip;
(4) evaporator is put into after being cleaned by semiconductor laser chip: evaporation p side electrode 1, translation frame evaporation N face electrode 12 after P electrode evaporation.
Embodiment 5,
A preparation method for small size semiconductor laser as described in Example 1, described semiconductor laser is pure bar structure, comprises step as follows:
(1) on GaAs substrate 11 successively grown buffer layer, N-type lower limit layer 10, lower waveguide layer 9, active area 8, on ducting layer 7, P type upper limiting layer 6, etching cutoff layer 5, ohmic contact layer 2; Adopt photoetching technique, prepare the die artwork of pure bar structure with photoresist on the surface of ohmic contact layer 2; Adopt the mode of wet etching or dry etching, etch downwards at ohmic contact layer 2, etching depth arrives the surface of etching cutoff layer 5: on described P type upper limiting layer 6, etch vallum;
(2) outside vallum district, insulating barrier 4 is prepared;
(3) carry out thinning to the GaAs substrate 11 of chip;
(4) evaporator is put into after being cleaned by semiconductor laser chip: translation frame evaporation N face electrode 12 after the electrode evaporation of evaporation p side electrode 1P face.
Embodiment 6,
A preparation method for small size semiconductor laser as described in Example 2, described semiconductor laser is band shoulder structure, and preparation method is as follows:
(1) on GaAs substrate 11 successively grown buffer layer, N-type lower limit layer 10, lower waveguide layer 9, active area 8, on ducting layer 7, P type upper limiting layer 6, etching cutoff layer 5, ohmic contact layer 2; Adopt photoetching technique, prepare the die artwork of band shoulder structure 13,14 with photoresist on the surface of ohmic contact layer; Adopt the mode of wet etching or dry etching, etch downwards at ohmic contact layer 2, etching depth arrives the surface of etching cutoff layer 5;
(2) insulating barrier 4 outside vallum district is prepared;
(3) carry out thinning to the GaAs substrate 11 of chip;
(6) evaporator is put into after being cleaned by semiconductor laser chip: evaporation p side electrode 1, translation frame evaporation N face electrode 12 after p side electrode evaporation.
Claims (10)
1. a small size semiconductor laser, is characterized in that, periodic dimensions≤150 μm of described semiconductor laser.
2. a kind of small size semiconductor laser according to claim 1, is characterized in that, the periodic dimensions of described semiconductor laser is 120-150 μm.
3. a kind of small size semiconductor laser according to claim 2, is characterized in that, the periodic dimensions of described semiconductor laser is 150 μm.
4. a kind of small size semiconductor laser according to claim 1, it is characterized in that, described semiconductor laser is pure bar structure: described semiconductor laser, comprise the N face electrode from bottom to top set gradually, GaAs substrate, N-type lower limit layer, lower waveguide layer, active area, upper ducting layer and the P type upper limiting layer with etching cutoff layer, the upper surface of described etching cutoff layer is provided with vallum shape P type upper limiting layer, described vallum is provided with ohmic contact layer, described P type upper limiting layer is provided with the insulating barrier exposing ohmic contact layer, described insulating barrier and ohmic contact layer are provided with p side electrode.
5. a kind of small size semiconductor laser according to claim 4, is characterized in that, described semiconductor laser is band shoulder structure: the vallum bilateral symmetry of described vallum shape P type upper limiting layer is provided with band shoulder structure.
6. a kind of small size semiconductor laser according to claim 4 or 5, is characterized in that, the vallum width of described vallum shape P type upper limiting layer is 4-5 μm.
7. the preparation method of small size semiconductor laser as described in claim 1-6, comprises step as follows:
(1) on semiconductor laser chip, ohmic contact layer is prepared, through the die artwork of photoetching, etching manufacturing cycle size≤150 μm;
(2) the P face of the complete ohmic contact layer chip of described preparation is protected;
(3) carry out thinning to the substrate of chip;
(4) evaporator is put into after being cleaned by semiconductor laser chip: evaporation p side electrode, translation frame evaporation N face electrode after P electrode evaporation.
8. the preparation method of small size semiconductor laser as claimed in claim 7, it is characterized in that, in described step (1), the periodic dimensions of described semiconductor laser is 100-150 μm; Preferably, the periodic dimensions of described semiconductor laser is 150 μm.
9. the preparation method of small size semiconductor laser as claimed in claim 8, it is characterized in that, described semiconductor laser is pure bar structure, and preparation method is as follows:
(1) on gaas substrates successively grown buffer layer, N-type lower limit layer, lower waveguide layer, active area, upper ducting layer, P type upper limiting layer, etching cutoff layer, ohmic contact layer; Adopt photoetching technique, prepare the die artwork of pure bar structure with photoresist on the surface of ohmic contact layer, its figure periodic dimensions≤150 μm; Adopt the mode of wet etching or dry etching, etch downwards at ohmic contact layer, etching depth arrives the surface of etching cutoff layer: on described P type upper limiting layer, etch vallum;
(2) outside vallum district, insulating barrier is prepared;
(3) carry out thinning to the GaAs substrate of chip;
(4) evaporator is put into after being cleaned by semiconductor laser chip: translation frame evaporation N face electrode after evaporation p side electrode p side electrode evaporation.
10. the preparation method of small size semiconductor laser as claimed in claim 8, is characterized in that, described semiconductor laser is band shoulder structure, and preparation method is as follows:
(1) on gaas substrates successively grown buffer layer, N-type lower limit layer, lower waveguide layer, active area, upper ducting layer, P type upper limiting layer, etching cutoff layer, ohmic contact layer; Adopt photoetching technique, prepare the die artwork of band shoulder structure with photoresist on the surface of ohmic contact layer, its figure periodic dimensions≤150 μm; Adopt the mode of wet etching or dry etching, etch downwards at ohmic contact layer, etching depth arrives the surface of etching cutoff layer;
(2) insulating barrier outside vallum district is prepared;
(3) carry out thinning to the GaAs substrate of chip;
(4) evaporator is put into after being cleaned by semiconductor laser chip: evaporation p side electrode, translation frame evaporation N face electrode after p side electrode evaporation.
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| CN111370992A (en) * | 2020-04-15 | 2020-07-03 | 深圳市利拓光电有限公司 | Power semiconductor laser with constant temperature control function and manufacturing method thereof |
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