CN104465682B - 固态图像传感器、其制造方法以及电子装置 - Google Patents

固态图像传感器、其制造方法以及电子装置 Download PDF

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Publication number
CN104465682B
CN104465682B CN201410452359.2A CN201410452359A CN104465682B CN 104465682 B CN104465682 B CN 104465682B CN 201410452359 A CN201410452359 A CN 201410452359A CN 104465682 B CN104465682 B CN 104465682B
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Prior art keywords
upper electrode
photoelectric conversion
film
organic photoelectric
solid
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Chinese (zh)
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CN104465682A (zh
Inventor
定荣正大
泷本香织
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Sony Semiconductor Solutions Corp
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Sony Corp
Sony Semiconductor Solutions Corp
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Priority to CN201811381399.7A priority Critical patent/CN109360835B/zh
Priority to CN201811381397.8A priority patent/CN109585478B/zh
Publication of CN104465682A publication Critical patent/CN104465682A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201410452359.2A 2013-09-12 2014-09-05 固态图像传感器、其制造方法以及电子装置 Active CN104465682B (zh)

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CN201811381399.7A CN109360835B (zh) 2013-09-12 2014-09-05 固态图像传感器、其制造方法以及电子装置
CN201811381397.8A CN109585478B (zh) 2013-09-12 2014-09-05 固态图像传感器、其制造方法以及电子装置

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JP2013-189723 2013-09-12
JP2013189723A JP6138639B2 (ja) 2013-09-12 2013-09-12 固体撮像素子および製造方法、並びに電子機器

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CN201811381397.8A Division CN109585478B (zh) 2013-09-12 2014-09-05 固态图像传感器、其制造方法以及电子装置

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JP6138639B2 (ja) * 2013-09-12 2017-05-31 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および製造方法、並びに電子機器
DE102014102565B4 (de) * 2014-02-27 2019-10-24 Osram Oled Gmbh Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
CN104362157B (zh) * 2014-12-02 2017-05-03 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
CN107534050B (zh) * 2015-05-19 2021-12-14 索尼公司 图像传感器、层叠型摄像装置和摄像模块
JP2017041559A (ja) * 2015-08-20 2017-02-23 日本化薬株式会社 光電変換素子、撮像素子、光センサー及び光電変換素子用材料
CN108701705B (zh) * 2016-03-15 2022-11-18 索尼公司 固态成像元件及其制造方法和电子设备
CN107871757B (zh) * 2016-09-23 2020-04-14 京东方科技集团股份有限公司 有机发光二极管阵列基板及其制备方法、显示装置
JP2018074077A (ja) * 2016-11-02 2018-05-10 ソニー株式会社 撮像素子、固体撮像装置及び電子デバイス
JP2018093052A (ja) 2016-12-02 2018-06-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子およびその製造方法、並びに電子機器
CN115332281A (zh) 2017-06-21 2022-11-11 索尼半导体解决方案公司 成像元件、层叠式成像元件和固态成像装置
FR3076082B1 (fr) * 2017-12-21 2020-01-24 Isorg Capteur d'image
CN110197875B (zh) 2018-02-26 2025-02-14 松下知识产权经营株式会社 光电转换元件及其制造方法
JP7162275B2 (ja) * 2018-06-14 2022-10-28 パナソニックＩｐマネジメント株式会社 制御電極と、透明電極と、前記制御電極と前記透明電極の側面とを電気的に接続する接続層と、を備えるイメージセンサ
CN110784634B (zh) * 2019-11-15 2021-10-29 Oppo广东移动通信有限公司 图像传感器、控制方法、摄像头组件及移动终端
JP7571371B2 (ja) * 2020-01-31 2024-10-23 ソニーグループ株式会社 光電変換素子および撮像素子
CN111384077B (zh) * 2020-04-15 2021-03-16 上海尧凯电子技术有限公司 一种半导体传感器封装及其形成方法
TWI794604B (zh) * 2020-05-04 2023-03-01 晶元光電股份有限公司 光感測元件
CN118661262A (zh) * 2022-02-09 2024-09-17 株式会社日本显示器 检测装置
WO2024262191A1 (ja) * 2023-06-20 2024-12-26 株式会社ジャパンディスプレイ 検出装置及び検出装置の製造方法

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JP2015056554A (ja) 2015-03-23
US10014349B2 (en) 2018-07-03
CN109585478B (zh) 2023-08-01
CN109585478A (zh) 2019-04-05
US20230034528A1 (en) 2023-02-02
US20240349526A1 (en) 2024-10-17
CN104465682A (zh) 2015-03-25
CN109360835A (zh) 2019-02-19
US20150070556A1 (en) 2015-03-12
US20170243925A1 (en) 2017-08-24
CN109360835B (zh) 2024-02-23
JP6138639B2 (ja) 2017-05-31
US20180301510A1 (en) 2018-10-18
US12035549B2 (en) 2024-07-09
US9666643B2 (en) 2017-05-30
US20210028234A1 (en) 2021-01-28
US10304904B2 (en) 2019-05-28
US11489015B2 (en) 2022-11-01
US10840303B2 (en) 2020-11-17
US20190237513A1 (en) 2019-08-01

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