CN104465572B - Encapsulating structure - Google Patents
Encapsulating structure Download PDFInfo
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- CN104465572B CN104465572B CN201310414653.XA CN201310414653A CN104465572B CN 104465572 B CN104465572 B CN 104465572B CN 201310414653 A CN201310414653 A CN 201310414653A CN 104465572 B CN104465572 B CN 104465572B
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- substrate
- conducting element
- sectional area
- major axis
- conducting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Combinations Of Printed Boards (AREA)
Abstract
The present invention is that, on a kind of encapsulating structure, it includes：One first substrate and a second substrate.First sectional area of the conducting element of grade first of the first substrate has one first major axis and one first short axle.Second sectional area of the conducting element of grade second of the second substrate has one second major axis and one second short axle, second major axis of each conducting element of grade second forms an angle more than 0 degree with the first major axis of corresponding each conducting element of grade first, and first sectional area and second sectional area form an overlapping area.When two substrates are aligned to be connected, if having side-play amount, the uniformity of the overlapping area area of encapsulating structure of the invention is preferable.Also, if side-play amount increases, the overlapping area area of encapsulating structure of the present invention is big compared with the overlapping area area of known technology, shows that encapsulating structure of the present invention has tolerance higher for departure.
Description
Technical field
The present invention is on a kind of encapsulating structure.
Background technology
With reference to Fig. 1, the contraposition connection diagram of the known substrate of its display.Known first substrate 11 and second substrate 12 are right
In the connection procedure of position, because the contraposition of two substrates is forbidden, will cause the conductive pole 111 of first substrate 11 can not lead with second substrate 12
Electric post 121 is smoothly electrically connected with.In addition, being made in itself in substrate, the distance of conductive intercolumniation may be caused by error apart from not
One situation, when two substrates are aligned and connected, the conductive pole for being likely to result in two substrates can not smoothly be electrically connected with.Furthermore, if two
The temperature that there is difference or the two substrates heating of thermal coefficient of expansion (CTE) between substrate is different, when substrate is heated, because hot
Swollen influence, skew when causing the conductive pole of substrate to dock, the particularly conductive pole in substrate corners becomes apparent, so
The conductive pole for being likely to result in two substrates there is a problem of smoothly being electrically connected with.
The content of the invention
The one side of this exposure is on a kind of encapsulating structure.In one embodiment, the encapsulating structure includes：One first base
Plate, a second substrate and sealing.The first substrate includes a first substrate body, several first conductive pads and several first conductions
Element, the first substrate body has a first surface, and the conductive pad of grade first is arranged at the first surface, and the grade first is conductive
Element is respectively formed on the conductive pad of grade first, and the prominent first surface, and the conducting element of grade first has one first section
Area, first sectional area is parallel to the first surface and first sectional area has one first major axis and one first short axle.Should
Second substrate includes a second substrate body, several second conductive pads and several second conducting elements, second substrate body tool
There is a second surface, in face of the first surface of the first substrate, the conductive pad of grade second is arranged at the second surface, the grade
Two conducting elements are respectively formed on the conductive pad of grade second, and the prominent second surface；The grade second of the second substrate is led
Electric device is connected and is electrically connected with the conducting element of grade first of the first substrate, and the conducting element of grade second has one second
Sectional area, second sectional area is parallel to the second surface and second sectional area has one second major axis and one second short axle,
Second major axis of each conducting element of grade second forms one with the first major axis of corresponding each conducting element of grade first
Angle more than 0 degree, first sectional area and second sectional area form an overlapping area.Sealing be arranged at the first substrate and
Between the second substrate.
The one side of this exposure is on a kind of encapsulating structure.In one embodiment, the encapsulating structure includes：One first base
Plate, a second substrate, a chip and sealing.The first substrate includes a first substrate body and several first conducting elements, should
First substrate body has a first surface, and the conducting element of grade first protrudes the first surface respectively, the conductive element of grade first
Part has one first sectional area, and first sectional area is parallel to the first surface, and first sectional area has one first major axis
And one first short axle.The second substrate includes a second substrate body and several second conducting elements, second substrate body tool
There is a second surface, in face of the first surface of the first substrate；The conducting element of grade second protrudes the second surface respectively, should
Second conducting element is connected and is electrically connected with first conducting element, and the conducting element of grade second has one second sectional area,
Second sectional area has one second major axis and one second short axle parallel to the second surface and second sectional area, it is each this etc.
Second major axis of the second conducting element forms one and is more than 0 degree with the first major axis of corresponding each conducting element of grade first
Angle, first sectional area and second sectional area form an overlapping area.The chip is located at the first substrate and second substrate
Between, and the first substrate is electrically connected with, wherein conducting element of grade first and the conducting element of grade second is outside the chip.
Sealing is arranged between the first substrate and the second substrate.
When two substrates are aligned to be connected, if having side-play amount between the first conducting element and the second conducting element, the present invention
Encapsulating structure overlapping area area uniformity it is preferable.Also, if side-play amount increases, the overlapping area of encapsulating structure of the present invention
Domain area is big compared with the overlapping area area of known technology, shows that encapsulating structure of the present invention has tolerance higher for departure,
Additionally, when there is side-play amount higher between two substrates, due to first conducting element and the second conductive element of encapsulating structure of the present invention
Overlapping area area between part is larger, therefore has higher connecing between the first conducting element of the invention and the second conducting element
Close reliability.
Brief description of the drawings
Fig. 1 shows the contraposition connection diagram of known substrate；
Fig. 2 shows the schematic diagram of an embodiment of encapsulating structure of the present invention；
Fig. 3 shows the upper schematic diagram of an embodiment of first substrate of the present invention；
Fig. 4 shows the upper schematic diagram of an embodiment of second substrate of the present invention；
Fig. 5 shows the schematic diagram of the embodiment after first substrate of the present invention and second substrate contraposition connection；
Fig. 6 shows a close-up schematic view of an embodiment of encapsulating structure of the present invention；
Fig. 7 shows the schematic diagram of another embodiment after first substrate of the present invention and second substrate contraposition connection；
Fig. 8 shows a close-up schematic view of another embodiment of encapsulating structure of the present invention；
Fig. 9 shows the one side schematic diagram of an embodiment of encapsulating structure of the present invention；
Figure 10 shows the schematic diagram of the another embodiment of encapsulating structure of the present invention；And
Figure 11 shows a close-up schematic view of the another embodiment of encapsulating structure of the present invention.
Specific embodiment
Fig. 2 shows the schematic diagram of an embodiment of encapsulating structure of the present invention.Fig. 3 shows an implementation of first substrate of the present invention
The upper schematic diagram of example.Fig. 4 shows the upper schematic diagram of an embodiment of second substrate of the present invention.Fig. 5 displays present invention first
The schematic diagram of the embodiment after substrate and second substrate contraposition connection.Coordinate referring to figs. 2 to Fig. 5, in the present embodiment, the envelope
Assembling structure 20 includes：One first substrate 30, a second substrate 40 and sealing 50.The first substrate 30 includes a first substrate body
31st, several first conductive pads 32,33 and several first conducting elements 35,36.
The first substrate body 31 has a first surface 311, and first conductive pad of grade 32,33 is arranged at the first surface
311, first conducting element of grade 35,36 is respectively formed on first conductive pad such as this 32,33, first conducting element of grade 35,
One corner section 51 of the 36 at least sides for being arranged at the first substrate 30（Such as Fig. 3 dotted line frames）, and the prominent first surface
311, in the present embodiment, first conducting element of grade 35,36 is conducting post.First conducting element of grade 35,36 has one
First sectional area, illustrates by taking the first conducting element 35 as an example, and the first conducting element 35 has one first sectional area 351, and this first
Sectional area 351 is parallel to the first surface 311 and first sectional area 351 has one first major axis 352 and one first short axle
353.Length of the length of first major axis 352 more than first short axle 353.First sectional area of first conducting element 35
351 is ovalize, in other embodiment, first sectional area can be rectangle, rhombus or other there is major axis and short axle
Shape.
The second substrate 40 includes a second substrate body 41, several second conductive pads 42,43 and several second conductive elements
Part 45,46.The second substrate body 41 has a second surface 411, in face of the first surface 311 of the first substrate 31, should
The second surface 411 is arranged at Deng the second conductive pad 42,43, second conducting element of grade 45,46 is respectively formed in this etc. second
On conductive pad 42,43, second conducting element of grade 45,46 is arranged at a corner section of an at least side of the second substrate 40
53（Such as Fig. 4 dotted line frames）, and the prominent second surface 411.In the present embodiment, second conducting element of grade 45,46 is conduction
Cylinder, in the present embodiment, the conducting element of grade second and the first conducting element are of similar shape and identical sectional area,
In other embodiments, the first conducting element and the second conducting element can be different shape or different cross-sectional.
It is conductive that second conducting element of grade 45,46 of the second substrate 40 is electrically connected with this of the first substrate 30 etc. first
Element 35,36, second conducting element of grade 45,46 has one second sectional area, is illustrated by taking the second conducting element 45 as an example, second
Conducting element 45 has one second sectional area 451, and second sectional area 451 is parallel to the second surface 411 and second section
Product 451 has one second major axis 452 and one second short axle 453, second major axis 452 and phase of each second conducting element of grade 45
First major axis 352 of corresponding each first conducting element of grade 35 forms an angle theta more than 0 degree, according to an embodiment, folder
Angle θ is 90 degree, and first sectional area 351 and second sectional area 451 form an overlapping area 455.
Sealing 50 is arranged between the first substrate 30 and the second substrate 40.Encapsulating structure of the invention 20 separately includes one
Chip 21, between the first substrate 30 and second substrate 40, and is electrically connected with the first substrate 30.In the present embodiment,
The chip 21 is arranged on the first substrate 30, and first conducting element of grade 35,36 and this etc. the second conducting element 45,46 enclose
Outside the chip 21.In addition, the first substrate 30 and the second substrate 40 are free of any active member（Such as active chip or active
Circuit）, a such as printed circuit board (PCB) (Printed Circuit Board).Encapsulating structure of the invention 20 separately includes a solder
22, it is formed between first conducting element of grade 35 and second conducting element of grade 45, to be electrically connected with the conductive element of grade first
Part and the conducting element of grade second.
When conducting element is got over hour with the spacing distance P of adjacent conducting element, side-play amount is reduced to overlapping region area
Degree become apparent, first conducting element is not more than 300 microns with the spacing distance P of adjacent first conducting element, equally
Ground, second conducting element is not more than 300 microns with the spacing distance of adjacent second conductive element.
Spacing distance P between two adjacent first conducting elements is 200 microns（μm）, in the first sectional area and the second sectional area
In the case of identical, by taking the circular area of known technology a diameter of 120 microns (μm) as an example, the sectional area is being fixed（11305±
5）Situation under, the length and its ratio of the present invention different the first major axis of design and the first short axle（First major axis/the first is short
Axle）, aspect 1-6 is implemented as follows.
| First major axis | First short axle | Sectional area | Ratio | |
| Implement aspect 1 | 145 | 90 | 11309 | 1.61 |
| Implement aspect 2 | 140.7 | 93.8 | 11306 | 1.50 |
| Implement aspect 3 | 139.4 | 95 | 11303 | 1.47 |
| Implement aspect 4 | 137.2 | 97.2 | 11305 | 1.41 |
| Implement aspect 5 | 135 | 99.5 | 11304 | 1.36 |
| Implement aspect 6 | 130 | 105.28 | 11303 | 1.23 |
In the various side-play amounts of two substrates（0 μm to 60 μm）Under situation, it is known that the overlapping area of two conducting elements in technology
The overlapping area Area comparison of six implementation aspects of area and the present invention is as follows.
The generation of side-play amount includes the bit errors between substrate；Substrate makes in itself, is missed in the distance of conductive intercolumniation
Difference and scale error；And the influence of heat expansion, when substrate is heated, substrate corners conductive intercolumniation distance increase it is inclined
Move, side-play amount is quite big to known techniques effect, as it appears from the above, without side-play amount（0μm）When, overlapping area area is 11309；
But in the case of side-play amount is 60 μm, overlapping area area is down to 4422, less than the overlapping area area 11309 without side-play amount
Half.For high-speed product, the quality of product may be caused to be difficult to control for the difference of the signal function of same group
System.
Relatively, during the present invention six implements aspect, illustrated as a example by implementing aspect 3, without side-play amount（0μm）When, weight
Repeatedly region area is 8683；But in the case of side-play amount is 60 μm, overlapping area area is 4517, more than the weight without side-play amount
The repeatedly half of region area 8683.Its display, if having different side-play amounts, causes different overlapping areas when two substrates are aligned and connected
During the area of domain, implementation aspect of the invention is preferable for the uniformity of overlapping area area.Meanwhile, in the increased situation of side-play amount
Under, the overlapping area area that the present invention implements aspect is big compared with the overlapping area area of known technology, and the display present invention implements aspect
Reliability for departure with tolerance higher and with engagement higher.
In six implementation aspects of the invention described above, when first major axis is smaller with the ratio of first short axle, side-play amount
Influence for overlapping area area is larger.It is preferred that first major axis is not less than 1.47 with the ratio of first short axle, and should
Second major axis is not less than 1.47 with the ratio of second short axle.
It is apart from P when first conducting element and second conducting element have side-play amount（200）1/5th（200/
5=40 microns）In the case of, the overlapping area area is not less than 0.60 with the ratio of the overlapping area area that side-play amount is 0.
For example：Illustrated as a example by implementing aspect 6, without side-play amount（0μm）When, overlapping area area is 9941；It it is 40 μm in side-play amount
In the case of, overlapping area area is 6564, and its ratio is 0.66.
In addition, the spacing distance P between two adjacent first conducting elements is 150 microns（μm）, with known technology a diameter of 80
As a example by the circular area of micron (μm), the sectional area is being fixed（5024）Situation under, the present invention different the first major axis of design
And first short axle length and its ratio（First major axis/the first short axle）, aspect 7-12 is implemented as follows.
| First major axis | First short axle | Sectional area | Ratio | |
| Implement aspect 7 | 96.63 | 60 | 5024 | 1.61 |
| Implement aspect 8 | 94.36 | 62 | 5024 | 1.52 |
| Implement aspect 9 | 93.08 | 63.2 | 5024 | 1.47 |
| Implement aspect 10 | 91.66 | 64.6 | 5024 | 1.42 |
| Implement aspect 11 | 90.12 | 66.2 | 5024 | 1.36 |
| Implement aspect 12 | 86.66 | 70.2 | 5024 | 1.23 |
In the various side-play amounts of two substrates（0 μm to 60 μm）Under situation, it is known that the overlapping area of two conducting elements in technology
Area and six overlapping area Area comparisons for implementing aspect 7-12 of the present invention are as follows.
It is apart from P when first conducting element and second conducting element have side-play amount（150）1/5th（150/
5=30 microns）In the case of, the overlapping area area is not less than 0.60 with the ratio of the overlapping area area that side-play amount is 0.
For example：Illustrated as a example by implementing aspect 12, without side-play amount（0μm）When, overlapping area area is 4419；It it is 30 μm in side-play amount
In the case of, overlapping area area is 2669, and its ratio is 0.603.
Fig. 3 to Fig. 5 is refer again to, wherein Fig. 5 is first conducting element of grade 35 and Fig. 4 of the corner section 51 in Fig. 3
In corner section 53 second conducting element of grade 45 contraposition connection schematic diagram, in the present embodiment, first major axis
352 are mutually perpendicular to first short axle 353, and first major axis 452 is mutually perpendicular to first short axle 453.In addition, this first
Substrate 30 separately includes a side 37, the wherein bearing of trend of the first major axis 352 of first conducting element 35 and the first substrate
The direction of 30 side 37 is interlaced with each other.
With reference to Fig. 6, a close-up schematic view of an embodiment of its display encapsulating structure of the present invention.Correspondence refers to Fig. 5,
In the case of first conducting element 35 shown in Fig. 5 is connected with second conducting element 45 contraposition, led compared to the grade first
The periphery of electric device 35 and second conducting element of grade 45, the solder 22 has a recessed area 221.Relatively, in the solder
22 opposite side, the solder 22 has an outburst area 222.
Fig. 7 shows the schematic diagram of another embodiment after first substrate of the present invention and second substrate contraposition connection.Fig. 8 shows
One close-up schematic view of another embodiment of encapsulating structure of the present invention.Coordinate and refer to Fig. 7 and 8, shown in Fig. 7 this first lead
In the case of electric device 36 is connected with second conducting element 46 contraposition, compared to first conducting element of grade 36 and the grade second
The periphery of conducting element 45, the solder 22 has two recessed areas 223,224.
Fig. 3 and Fig. 4 is refer again to, the first substrate 30 separately includes several 3rd conducting elements 38, the conductive element of grade the 3rd
Part 38 protrudes the first surface 311, and the sectional area of the conducting element 38 of grade the 3rd sets for circle, and the conducting element 38 of grade the 3rd
It is placed in a central section 52 of an at least side of the first substrate 30（Such as dotted line frame）.First conducting element of grade 35,36 sets
It is placed in a corner section of an at least side of the first substrate 30.That is, the grade the 3rd conducting element 38 and first substrate 30 it
The distance of central point is less than first conductive unit of grade 35,36 and the distance of the central point of first substrate 30.
The second substrate 40 separately include several 4th conducting elements 48, the conducting element 48 of grade the 4th respectively protrude this second
Surface 411, the sectional area of the conducting element 48 of grade the 4th is circle, similarly, the conducting element 48 of grade the 4th be arranged at this
One central section 54 of an at least side of two substrates 40（Such as dotted line frame）So that the conducting element 38 of grade the 3rd with it is corresponding
The conducting element 48 of grade the 4th is connected and is electrically connected with.Second conducting element of grade 45,46 is arranged at the second substrate 40 extremely
One corner section of a few side.That is, the conducting element 48 of grade the 4th is less than this etc. with the distance of the central point of second substrate 40
The distance of the central point of the second conductive unit 45,46 and second substrate 40.
Fig. 9 shows the one side schematic diagram of an embodiment of encapsulating structure of the present invention.Coordinate and refer to Fig. 3, Fig. 4 and Fig. 9, examine
Consider the bit errors between substrate；Substrate makes in itself, range error and skew between conducting element；And heat expansion effect
Really, when substrate is heated, the skew that the distance between the conducting element of substrate corners is increased, or because of substrate warp, cause in base
Ranging offset between the conducting element that plate angle falls is increased.When first substrate 30 is connected with the contraposition of second substrate 40, the angle of substrate
The side-play amount that falls increases, but because the present invention using first conducting element of grade 35,36 with major axis and short axle and this etc. second
Conducting element 45,46 is respectively arranged at the first substrate 30 and the corner section of the second substrate 40 so that even if in substrate
The side-play amount in corner increases under situation, first conducting element of grade 35,36 and this etc. the second conducting element 45,46 can smoothly align
Connection.
In addition, because the center segment offset in the side of substrate is smaller, therefore in the center of the side of the first substrate 30
Section is that the central section using the conducting element 38 of grade the 3rd, and in the side of the second substrate 40 is led using the grade the 4th
The sectional area of electric device 48, the conducting element 38 of grade the 3rd and the conducting element 48 of grade the 4th is circle, to increase conducting element
Density or increase whole overlapping area areas between conducting element.
Figure 10 shows the schematic diagram of the another embodiment of encapsulating structure of the present invention.Figure 11 shows encapsulating structure of the present invention again
One close-up schematic view of one embodiment.Coordinate and refer to Figure 10 and Figure 11, in the present embodiment, the encapsulating structure 60 includes：
One first substrate 70, a second substrate 80 and sealing 90.The present embodiment is with Fig. 2 embodiment differences, the first substrate
70 several first conducting elements 75,76 are solder, and several second conducting elements 85,86 of the second substrate 80 extend lengthening
It is engaged with each other with connecting and being electrically connected with grade first conducting element 75, first conducting element of 76 Fig. 2 and the second conducting element
Mode be need to first by solder be formed to conducting element reflow again engagement, during due to conducting element tinyization, solder is difficult essence
True is formed on conducting element, the practice of Fig. 5 structures can by solder after the first conducting element is formed on first substrate with
The second conducting element on second substrate is engaged in reflow mode, is so not required to solder and is formed to conducting element, therefore is relatively held
Easily make.Similarly, the conducting element of grade first has one first sectional area, and first sectional area has one first major axis and one
First short axle；And the conducting element of grade second has one second sectional area, second sectional area has one second major axis and one the
Two short axles, the first major axis of the second major axis of each conducting element of grade second and corresponding each conducting element of grade first
An angle more than 0 degree is formed, first sectional area and second sectional area form an overlapping area, and one embodiment of the invention is
Second major axis of the conducting element of grade second forms 90 degree with the first major axis of corresponding each conducting element of grade first
Angle.
In other embodiments, several second conducting elements of the second substrate can be solder, and the first substrate number
Individual first conducting element extends lengthening to connect and be electrically connected with the conducting element of grade first.
Only above-described embodiment is only explanation principle of the invention and its effect, and is not used to the limitation present invention.Therefore, practise in
The personage of this technology modifies and changes to above-described embodiment and do not take off spirit of the invention still.Interest field of the invention should be as
Listed by claims.
Claims (15)
1. a kind of encapsulating structure, it is characterised in that including：
One first substrate, including a first substrate body, several first conductive pads and several first conducting elements, the first substrate
Body has a first surface, and first conductive pad is arranged at the first surface, and first conducting element is respectively formed in
On first conductive pad, and the prominent first surface, first conducting element is with one first sectional area, first section
Product is parallel to the first surface and first sectional area has one first major axis and one first short axle；
One second substrate, including a second substrate body, several second conductive pads and several second conducting elements, the second substrate
Body has a second surface, and in face of the first surface of the first substrate, second conductive pad is arranged at the second surface,
Second conducting element is respectively formed on second conductive pad, and the prominent second surface；The second substrate it is described
Second conducting element is connected and is electrically connected with first conducting element of the first substrate, and second conducting element has
One second sectional area, second sectional area is parallel to the second surface and second sectional area has one second major axis and one second
Short axle, the first major axis shape of the second major axis of each second conducting element and corresponding each described first conducting element
Into an angle more than 0 degree, first sectional area and second sectional area form an overlapping area；And
Sealing, is arranged between the first substrate and the second substrate.
2. encapsulating structure as claimed in claim 1, it is characterised in that first major axis is not less than with the ratio of first short axle
1.47, second major axis is not less than 1.47 with the ratio of second short axle.
3. encapsulating structure as claimed in claim 1, it is characterised in that the distance between two adjacent first conducting elements is a spacer
From, in the case of there are 1/5th that side-play amount is the spacing distance in first conducting element and second conducting element,
The ratio of the overlapping area area in the case of overlapping area area and side-play amount are 0 is not less than 0.60.
4. encapsulating structure as claimed in claim 1, it is characterised in that separately include a solder, be formed at first conducting element and
Between second conducting element.
5. encapsulating structure as claimed in claim 1, it is characterised in that first conducting element and second conducting element at least one
Comprising conducting post.
6. encapsulating structure as claimed in claim 1, it is characterised in that first conducting element is weldering with the one of second conducting element
Material.
7. encapsulating structure as claimed in claim 1, it is characterised in that first major axis is mutually perpendicular to first short axle.
8. encapsulating structure as claimed in claim 1, it is characterised in that the distance of first conducting element and adjacent first conducting element
No more than 300 microns.
9. encapsulating structure as claimed in claim 1, it is characterised in that the first substrate separately includes one side, wherein this is first conductive
The bearing of trend of the first major axis of element is interlaced with each other with the direction of the side of the first substrate.
10. encapsulating structure as claimed in claim 1, it is characterised in that separately include a chip, positioned at the first substrate and second substrate
Between, and it is electrically connected with the first substrate.
11. encapsulating structures as claimed in claim 1, it is characterised in that the first substrate and the second substrate are free of any active element
Part.
A kind of 12. encapsulating structures, it is characterised in that including：
One first substrate, including a first substrate body and several first conducting elements, the first substrate body have one first
Surface, first conducting element protrudes the first surface respectively, and first conducting element has one first sectional area, and this
One sectional area is parallel to the first surface, and first sectional area has one first major axis and one first short axle；
One second substrate, including a second substrate body and several second conducting elements, the second substrate body have one second
Surface, in face of the first surface of the first substrate；Second conducting element protrudes the second surface respectively, second conduction
Element is connected and is electrically connected with first conducting element, and second conducting element has one second sectional area, this second section
Area parallel is in the second surface and second sectional area has one second major axis and one second short axle, and each described second is conductive
Second major axis of element forms an angle more than 0 degree with the first major axis of corresponding each described first conducting element, should
First sectional area and second sectional area form an overlapping area；
One chip, between the first substrate and second substrate, and is electrically connected with the first substrate, wherein described first is conductive
Element and second conducting element are outside the chip；And
Sealing, is arranged between the first substrate and the second substrate.
13. as claim 12 encapsulating structure, it is characterised in that the first substrate separately include several 3rd conducting elements, institute
State the 3rd conducting element and protrude the first surface, the sectional area of the 3rd conducting element is circle.
14. as claim 13 encapsulating structure, it is characterised in that the second substrate separately include several 4th conducting elements, institute
State the 4th conducting element and protrude the second surface respectively, the sectional area of the 4th conducting element is circle, and the described 3rd is conductive
Element is connected and is electrically connected with corresponding the 4th conducting element.
The encapsulating structure of 15. such as claims 13, it is characterised in that the central point of the 3rd conducting element and the first substrate
Distance of the distance less than the central point of first conductive unit and the first substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310414653.XA CN104465572B (en) | 2013-09-12 | 2013-09-12 | Encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310414653.XA CN104465572B (en) | 2013-09-12 | 2013-09-12 | Encapsulating structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
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| CN104465572B true CN104465572B (en) | 2017-06-06 |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06268016A (en) * | 1993-03-11 | 1994-09-22 | Fuji Electric Co Ltd | Method for mounting integrated circuit device |
| JPH07235566A (en) * | 1994-02-22 | 1995-09-05 | Nec Corp | Mounting structure of optical element |
| JPH11261206A (en) * | 1998-03-13 | 1999-09-24 | Mitsubishi Electric Corp | Circuit board, substrate mounting method, and circuit assembly |
| JP2000077465A (en) * | 1998-08-27 | 2000-03-14 | Toshiba Corp | Electronic unit |
| JP2000306950A (en) * | 1999-04-23 | 2000-11-02 | Canon Inc | Flip chip mounting board, and its mounting method |
| JP2004055660A (en) * | 2002-07-17 | 2004-02-19 | Shinko Electric Ind Co Ltd | Wiring board and semiconductor device |
| CN101080359A (en) * | 2004-11-04 | 2007-11-28 | 微芯片公司 | Compression and cold weld sealing methods and devices |
| JP4155080B2 (en) * | 2003-03-31 | 2008-09-24 | 富士通株式会社 | Manufacturing method of semiconductor device |
| CN102130093A (en) * | 2009-11-27 | 2011-07-20 | 日东电工株式会社 | Wiring circuit structure and manufacturing method for semiconductor device using the structure |
| CN103035599A (en) * | 2011-09-28 | 2013-04-10 | 台湾积体电路制造股份有限公司 | Metal pad structures in dies |
-
2013
- 2013-09-12 CN CN201310414653.XA patent/CN104465572B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06268016A (en) * | 1993-03-11 | 1994-09-22 | Fuji Electric Co Ltd | Method for mounting integrated circuit device |
| JPH07235566A (en) * | 1994-02-22 | 1995-09-05 | Nec Corp | Mounting structure of optical element |
| JPH11261206A (en) * | 1998-03-13 | 1999-09-24 | Mitsubishi Electric Corp | Circuit board, substrate mounting method, and circuit assembly |
| JP2000077465A (en) * | 1998-08-27 | 2000-03-14 | Toshiba Corp | Electronic unit |
| JP2000306950A (en) * | 1999-04-23 | 2000-11-02 | Canon Inc | Flip chip mounting board, and its mounting method |
| JP2004055660A (en) * | 2002-07-17 | 2004-02-19 | Shinko Electric Ind Co Ltd | Wiring board and semiconductor device |
| JP4155080B2 (en) * | 2003-03-31 | 2008-09-24 | 富士通株式会社 | Manufacturing method of semiconductor device |
| CN101080359A (en) * | 2004-11-04 | 2007-11-28 | 微芯片公司 | Compression and cold weld sealing methods and devices |
| CN102130093A (en) * | 2009-11-27 | 2011-07-20 | 日东电工株式会社 | Wiring circuit structure and manufacturing method for semiconductor device using the structure |
| CN103035599A (en) * | 2011-09-28 | 2013-04-10 | 台湾积体电路制造股份有限公司 | Metal pad structures in dies |
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| CN104465572A (en) | 2015-03-25 |
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