CN104465526A - 一种bcd工艺中集成结型场效应晶体管的方法 - Google Patents
一种bcd工艺中集成结型场效应晶体管的方法 Download PDFInfo
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- CN104465526A CN104465526A CN201310422937.3A CN201310422937A CN104465526A CN 104465526 A CN104465526 A CN 104465526A CN 201310422937 A CN201310422937 A CN 201310422937A CN 104465526 A CN104465526 A CN 104465526A
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- 238000000034 method Methods 0.000 title claims abstract description 87
- 230000005669 field effect Effects 0.000 title claims abstract description 35
- 238000005468 ion implantation Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000003647 oxidation Effects 0.000 claims abstract description 4
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 4
- 238000005516 engineering process Methods 0.000 claims description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 229920005591 polysilicon Polymers 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000009776 industrial production Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 10
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1037—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure and non-planar channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310422937.3A CN104465526B (zh) | 2013-09-16 | 2013-09-16 | 一种bcd工艺中集成结型场效应晶体管的方法 |
Applications Claiming Priority (1)
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CN201310422937.3A CN104465526B (zh) | 2013-09-16 | 2013-09-16 | 一种bcd工艺中集成结型场效应晶体管的方法 |
Publications (2)
Publication Number | Publication Date |
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CN104465526A true CN104465526A (zh) | 2015-03-25 |
CN104465526B CN104465526B (zh) | 2017-11-10 |
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CN201310422937.3A Active CN104465526B (zh) | 2013-09-16 | 2013-09-16 | 一种bcd工艺中集成结型场效应晶体管的方法 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102194886A (zh) * | 2010-03-10 | 2011-09-21 | 三星移动显示器株式会社 | 薄膜晶体管、其制造方法和具有该薄膜晶体管的显示设备 |
CN102412270A (zh) * | 2011-07-01 | 2012-04-11 | 上海华虹Nec电子有限公司 | Igbt结构及其制备方法 |
CN102956706A (zh) * | 2011-08-19 | 2013-03-06 | 台湾积体电路制造股份有限公司 | 具有翼结构的晶体管 |
CN203013737U (zh) * | 2012-11-05 | 2013-06-19 | 国网智能电网研究院 | 一种新型快速恢复二极管 |
-
2013
- 2013-09-16 CN CN201310422937.3A patent/CN104465526B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102194886A (zh) * | 2010-03-10 | 2011-09-21 | 三星移动显示器株式会社 | 薄膜晶体管、其制造方法和具有该薄膜晶体管的显示设备 |
CN102412270A (zh) * | 2011-07-01 | 2012-04-11 | 上海华虹Nec电子有限公司 | Igbt结构及其制备方法 |
CN102956706A (zh) * | 2011-08-19 | 2013-03-06 | 台湾积体电路制造股份有限公司 | 具有翼结构的晶体管 |
CN203013737U (zh) * | 2012-11-05 | 2013-06-19 | 国网智能电网研究院 | 一种新型快速恢复二极管 |
Non-Patent Citations (1)
Title |
---|
钱振华等: ""一种可实现多种高压器件的新型BCD工艺"", 《电子元器件应用》 * |
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CN104465526B (zh) | 2017-11-10 |
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C06 | Publication | ||
PB01 | Publication | ||
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GR01 | Patent grant | ||
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210128 Address after: Room 810, 8 / F, building 1, 169 shengxia road and 1658 Zhangdong Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai, 201210 Patentee after: Shanghai ruobast Semiconductor Co.,Ltd. Address before: Room 219, 560 shengxia Road, Pudong New Area, Shanghai, 201203 Patentee before: SHANGHAI BAOXIN SOURCE POWER SEMICONDUCTOR Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230508 Address after: Room 909, 9th Floor, Building 2, No. 1298 Daqi Baoshan Road, Beilun District, Ningbo City, Zhejiang Province, 315800 Patentee after: Ningbo Baoxinyuan Power Semiconductor Co.,Ltd. Address before: Room 810, 8 / F, building 1, 169 shengxia road and 1658 Zhangdong Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai, 201210 Patentee before: Shanghai ruobast Semiconductor Co.,Ltd. |