CN104465442A - 半导体制程中铝硅接面的实时监测方法 - Google Patents
半导体制程中铝硅接面的实时监测方法 Download PDFInfo
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- CN104465442A CN104465442A CN201410709841.XA CN201410709841A CN104465442A CN 104465442 A CN104465442 A CN 104465442A CN 201410709841 A CN201410709841 A CN 201410709841A CN 104465442 A CN104465442 A CN 104465442A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
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CN201410709841.XA CN104465442B (zh) | 2014-11-28 | 2014-11-28 | 半导体制程中铝硅接面的实时监测方法 |
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CN201410709841.XA CN104465442B (zh) | 2014-11-28 | 2014-11-28 | 半导体制程中铝硅接面的实时监测方法 |
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CN104465442A true CN104465442A (zh) | 2015-03-25 |
CN104465442B CN104465442B (zh) | 2017-05-24 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111293049A (zh) * | 2018-12-10 | 2020-06-16 | 无锡华润上华科技有限公司 | 半导体器件制程控制方法及其控制系统 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5656546A (en) * | 1995-08-28 | 1997-08-12 | Taiwan Semiconductor Manufacturing Company Ltd | Self-aligned tin formation by N2+ implantation during two-step annealing Ti-salicidation |
JPH10112501A (ja) * | 1996-10-03 | 1998-04-28 | Nittetsu Semiconductor Kk | 半導体装置の製造方法 |
CN1778663A (zh) * | 2004-11-23 | 2006-05-31 | 台湾积体电路制造股份有限公司 | 防金属与硅层间侧向交互扩散的方法和结构及微机电结构 |
CN101159248A (zh) * | 2007-11-16 | 2008-04-09 | 无锡中微晶园电子有限公司 | 降低亚微米集成电路接触孔电阻的方法 |
CN101720512A (zh) * | 2007-05-07 | 2010-06-02 | 佐治亚科技研究公司 | 利用丝网印刷的局部背场形成高质量背接触 |
CN102254845A (zh) * | 2010-05-21 | 2011-11-23 | 武汉新芯集成电路制造有限公司 | 接触插塞底部轮廓的检测方法 |
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2014
- 2014-11-28 CN CN201410709841.XA patent/CN104465442B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5656546A (en) * | 1995-08-28 | 1997-08-12 | Taiwan Semiconductor Manufacturing Company Ltd | Self-aligned tin formation by N2+ implantation during two-step annealing Ti-salicidation |
JPH10112501A (ja) * | 1996-10-03 | 1998-04-28 | Nittetsu Semiconductor Kk | 半導体装置の製造方法 |
CN1778663A (zh) * | 2004-11-23 | 2006-05-31 | 台湾积体电路制造股份有限公司 | 防金属与硅层间侧向交互扩散的方法和结构及微机电结构 |
CN101720512A (zh) * | 2007-05-07 | 2010-06-02 | 佐治亚科技研究公司 | 利用丝网印刷的局部背场形成高质量背接触 |
CN101159248A (zh) * | 2007-11-16 | 2008-04-09 | 无锡中微晶园电子有限公司 | 降低亚微米集成电路接触孔电阻的方法 |
CN102254845A (zh) * | 2010-05-21 | 2011-11-23 | 武汉新芯集成电路制造有限公司 | 接触插塞底部轮廓的检测方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111293049A (zh) * | 2018-12-10 | 2020-06-16 | 无锡华润上华科技有限公司 | 半导体器件制程控制方法及其控制系统 |
CN111293049B (zh) * | 2018-12-10 | 2022-08-12 | 无锡华润上华科技有限公司 | 半导体器件制程控制方法及其控制系统 |
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CN104465442B (zh) | 2017-05-24 |
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Effective date of registration: 20170303 Address after: 361100 268-269, an industrial park, Tongan Industrial Zone, Fujian, Xiamen Applicant after: Xiamen Xunyang Electronic Technology Co.,Ltd. Address before: 200233 Shanghai, Xuhui District Rainbow Road No. 56, building 8, room E, Applicant before: SHANGHAI POWER BRIGHT ELECTRONIC TECHNOLOGY LTD. |
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Effective date of registration: 20220928 Address after: 102206 No.1 Linkong 2nd Road, Shunyi Park, Zhongguancun Science Park, Shunyi District, Beijing Patentee after: BEIJING LYUNENG XINCHUANG ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: No. 268-269, Tong'an Park, Tong'an Industrial Concentration Zone, Xiamen City, Fujian Province, 361100 Patentee before: Xiamen Xunyang Electronic Technology Co.,Ltd. |
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