CN104458121B - Silicon pressure sensor temperature excursion compensating circuit and circuit establishing method - Google Patents
Silicon pressure sensor temperature excursion compensating circuit and circuit establishing method Download PDFInfo
- Publication number
- CN104458121B CN104458121B CN201410776104.1A CN201410776104A CN104458121B CN 104458121 B CN104458121 B CN 104458121B CN 201410776104 A CN201410776104 A CN 201410776104A CN 104458121 B CN104458121 B CN 104458121B
- Authority
- CN
- China
- Prior art keywords
- pressure sensor
- silicon pressure
- temperature
- compensation
- bridge arm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
The invention provides a silicon pressure sensor temperature excursion compensating circuit which is characterized in that Ra, Rb, Rc, Rd, Re, Rn and Rt are included, wherein Ra, Rb, Rc, Rd and Re are compensating resistor networks formed by one or more resistors, Rn is a single negative temperature coefficient thermistor, Rt is a single positive temperature coefficient thermistor, a voltage source input end Vcc is connected with an excitation power supply input positive end Uin of a silicon pressure sensor through Ra which is connected in series with a whole bridge of the silicon pressure sensor, Rc is connected in parallel with Rt and then is connected in series with Rb to from Rq, one end of Rq is connected with the excitation power supply input positive end Uin, the other end of Rq is connected with an output signal positive end Uo+, Rq is connected in parallel with a silicon pressure sensor bridge arm R1, Re is connected in parallel with Rn and then is connected in series with Rd to form Rp, one end of the Rp is connected with the silicon pressure sensor, the other end of Rp is connected with output signal negative end UO-, and Rp is connected in parallel with a silicon pressure sensor bridge arm R4.
Description
Technical field
The invention belongs to Fluid pressure fields of measurement, is related to a kind of silicon pressure sensor temperature drift compensation method.
Background technology
The features such as silicon pressure sensor has simple structure, sensitivity is high, dynamic property is good, is widely used in stress test field
Close.Yet with its semiconductor technology self problem, always there is temperature drift phenomenon in silicon pressure sensor, its temperature drift is mainly by zero point temperature
Drift and sensitivity temperature drift are constituted.
At present common silicon pressure sensor temperature drift compensation method is had and is compensated using compensation chips, uses temperature acquisition
Module adds microprocessor to pass through method of algorithm interpolation etc..Using above-mentioned compensation method due to due to electronic component itself, lead to
Often it is at best able to realize the temperature drift compensation of sensor in -40 DEG C～+120 DEG C temperature ranges.But in bigger use temperature model
The use occasion such as -55 DEG C～+150 DEG C is enclosed, using said method the temperature drift compensation of silicon pressure sensor is difficult to.In big temperature
There are many stress test demands in the range of degree, disclosure satisfy that the big Silicon pressure using temperature range is passed in the urgent need to a kind of at present
Sensor temperature drift compensation method.
Common silicon pressure sensor temperature drift compensation realizes that calibration system is as shown in figure 1, structure by temperature calibration system
Build for the platform of silicon pressure sensor rating test.Wherein silicon pressure sensor is placed in calorstat；Instrument is suppressed by inducing QI
Pipe is connected with silicon pressure sensor, and reads pressure value by pressure testers；Compensation network is passed by 4 wires with Silicon pressure
Sensor is connected, and constant pressure source provides voltage drive, and circuit tester reads silicon pressure sensor output voltage signal.
Fig. 2 be the equivalent Wheatstone bridge of silicon pressure sensor, Uin and GND with input stimulus voltage source anode and negative terminal
It is connected, used as the anode and negative terminal of silicon pressure sensor output signal, R1, R2, R3, R4 are that silicon pressure sensor is each to Uo+ and Uo-
Bridge arm equivalent resistance.
The content of the invention
The purpose of the present invention is：In order to meet the stress test demand in -55 DEG C～150 DEG C temperature ranges, pressure is improved
Power measuring accuracy, the present invention proposes a kind of silicon pressure sensor temperature drift compensation method.It can realize -55 DEG C～150 DEG C temperature
In the range of temperature drift compensation function, improve silicon pressure sensor certainty of measurement.
The technical scheme is that：The technical solution adopted in the present invention is a kind of silicon pressure sensor temperature drift compensation side
Method.Methods described is considered as silicon pressure sensor the Wheatstone bridge being made up of R1, R2, R3, R4, and Uin ends and GND ends are with input
The anode of excitation voltage source is connected with negative terminal, and Uo+ and Uo- passes through as the anode and negative terminal of silicon pressure sensor output signal
The compensation resistor network for being operable with -55 DEG C～150 DEG C is built on electric bridge to realize the temperature drift compensation of silicon pressure sensor.
The invention provides a kind of silicon pressure sensor temperature drift compensation circuit, by characterized in that, including Ra, Rb, Rc,
Rd, Re, Rn, Rt, wherein Ra, Rb, Rc, Rd, Re are the compensation resistor network being made up of one or more resistance, and Rn is single
Negative tempperature coefficient thermistor, Rt is single semistor.
Voltage source input Vcc is connected by Ra with excitation power supply input positive terminal Uin of silicon pressure sensor, Ra and silicon
The whole electric bridge series connection of pressure transducer；Rc is in parallel with Rt and then is input into just with Rb Rq in series, one end of Rq and excitation power supply
End Uin is connected, and the other end of Rq is connected with output signal anode Uo+, and Rq realizes in parallel with silicon pressure sensor bridge arm R1；Re
In parallel and then with Rd Rp in series with Rn, one end of Rp is connected with excitation power supply input positive terminal Uin, the other end of Rp with it is defeated
Go out signal negative terminal UO- to be connected, Rp realizes in parallel with silicon pressure sensor bridge arm R4.
Further, the resistance for constituting Ra, Rb, Rc, Rd, Re is and can work in -55 DEG C～150 DEG C temperature ranges,
Within 1 ‰, resistance of the temperature drift value within 20ppm, Rn's precision can work in -55 DEG C～150 DEG C temperature ranges
Negative tempperature coefficient thermistor, Rt is the semistor that can be worked in -55 DEG C～150 DEG C temperature ranges.
The method for building above-mentioned temperature drift compensation circuit, it is characterised in that comprise the steps：
(1) build for the calibration system of silicon pressure sensor temperature drift compensation；
(2) silicon pressure sensor is put in calorstat, is heated to 25 DEG C and is kept for two hours, in specified excitation voltage source
Under, read zero pressure and the output pressure signal value at full-scale pressure moment；
(3) the Ra values in claim 1 are adjusted, the sensitivity compensation under room temperature is completed；
(4) Rp, Rq value in claim 1 is adjusted, completes room temperature zero compensation；
(5) calorstat temperature is adjusted to -55 DEG C, cools to the temperature and is kept for two hours, reads the moment zero pressure and expires
Range output pressure signal value；
(6) Rp values are adjusted again, realize -55 DEG C of zero compensations；
(7) calorstat temperature is adjusted to 150 DEG C, is warmed up to the temperature and is kept for two hours, reads the moment zero pressure and expires
Range output pressure signal value；
(8) Rq values, Rp values are adjusted again and use 25 DEG C of moment values, realize 150 DEG C of zero compensations；
(9) according to 25 DEG C, -55 DEG C and 150 DEG C compensation resistance informations Rp for obtaining25、Rp-55、Rq25And Rq150, meter
The value of Rb, Rc, Rd, Re is calculated, can be derived by equation below：
Wherein Rp25For 25 DEG C when the compensation resistor network resistance on bridge arm R4 sides that obtains, Rp-55For the bridge arm of -55 DEG C of acquisitions
The compensation resistor network resistance on R4 sides, β is the temperature coefficient of negative tempperature coefficient thermistor Rn；Rq25For 25 DEG C when the bridge that obtains
The compensation resistor network resistance on arm R1 sides, Rq150For 150 DEG C when the compensation resistor network resistance on bridge arm R1 sides that obtains, α is for just
The temperature coefficient of temperature coefficient thermistor Rn
(10) Ra, Rb, Rc, Rd, Re, Rn, Rt are obtained and temperature drift compensation circuit is built.
It is an advantage of the invention that：A kind of silicon pressure sensor temperature drift compensation circuit of the present invention and circuit construction method, pass through
Test obtains silicon pressure sensor temperature drift characteristic and builds its temperature drift compensation circuit, particularly on silicon pressure sensor bridge arm R1
Shunt compensation resistor network Rq is in parallel on bridge arm R4 to change temperature drift characteristic of the silicon pressure sensor in 25 DEG C～150 DEG C
Resistor network Rp is to change temperature drift characteristic of the silicon pressure sensor in -55 DEG C～25 DEG C for compensation, and in positive temperature coefficient temperature-sensitive
Parallel connection Rc values on resistance Rt, the parallel connection Re on negative tempperature coefficient thermistor Rn, to change compensation network temperature drift characteristic so as to
Temperature drift characteristic is complementary with silicon pressure sensor temperature drift characteristic, to improve silicon pressure sensor temperature drift compensation precision.Through test
Checking, is carried out after the temperature drift compensation of silicon pressure sensor using this compensation method, in -55 DEG C～150 DEG C temperature ranges, silicon pressure
Force transducer temperature drift is less than 0.02%FS/ DEG C.This method has that simple structure, operating temperature range be wide, low cost and other advantages, can
Meet the big stress test demand using temperature range.
Description of the drawings：
Fig. 1 is silicon pressure sensor rating test hardware system block diagram；
Fig. 2 is the equivalent Wheatstone bridge of silicon pressure sensor；
Fig. 3 is compensation resistor network figure；
Fig. 4 is the flow chart that a kind of silicon pressure sensor temperature drift compensation method of the invention is realized；
Fig. 5 is 1MPa silicon pressure sensor error characteristics comparison diagrams before and after compensation.
Specific embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings：
Fig. 3 is silicon pressure sensor temperature drift compensation resistor network.
Further, compensating resistor network mainly includes the compensation resistor network Ra of same electric bridge series connection, in parallel with bridge arm R1
Compensation resistor network Rq and with compensation resistor network Rp bridge arm R4 in parallel.Described compensation resistor network Rq is by compensating electricity
Resistance network Rb, Rc and Rt composition, wherein Rc is in parallel with Rt, then connects with Rb.Described compensation resistor network Rp is by compensating resistance
Network Rd, Re and Rn are constituted, and wherein Re is in parallel with Rn, then are connected with Rd.
Further, the compensation resistor network Ra mainly completes 25 DEG C of sensitivity compensations；Rb, Rc, Rd, Re, Rn, Rt master
Complete zero compensation at each temperature.Wherein Rb plays a part of silicon pressure sensor zero point forward migration, and Rd plays a silicon
The effect of pressure transducer zero point negative offset, Rc and Rt and Re and Rn collective effects mainly realize temperature drift compensation.
Fig. 4 is the flow chart for realizing silicon pressure sensor temperature drift compensation.It is as 1MPa silicon pressure sensors with a range
Example, specific implementation step is as follows：
(1) test platform for demarcating is built according to Fig. 1；
(2) oven heat is to 25 DEG C and is kept for two hours；
(3) at 25 DEG C, under specified excitation voltage source, silicon pressure sensor zero point and Full-span output characteristic are read；
(4) sensitivity compensation is carried out by adjusting Ra values, completes the sensitivity compensation under room temperature, it is 16 Ω to choose Ra values.
(5) Rq, Rp value is adjusted, realizes room temperature zero compensation.Wherein the adjustment of Rq needs to follow principle is：In specified excitation
Under voltage source and when only Ra and Rq is acted on, silicon pressure sensor offset output in its operating temperature range is consistently greater than 0.Choosing
It is 620K Ω to take Rq values, and Rp values are 990K Ω.
(6) oven heat is to -55 DEG C and is kept for two hours.
(7) Rp values are adjusted, realizes zero compensation of the silicon pressure sensor at -55 DEG C.It is 1360K Ω to choose Rp values.
(8) by oven heat is to 150 DEG C and is kept for two hours.Adjustment Rq values, Rp values use 25 DEG C of moment values, realize
150 DEG C of zero compensations.It is 980K Ω to choose Rq values.
(9) according to 25 DEG C, -55 DEG C and 150 DEG C compensation resistance informations Rp for obtaining25、Rp-55、Rq25And Rq150, meter
The value of Rb, Rc, Rd, Re is calculated, can be derived by equation below：
Wherein Rp25For 25 DEG C when the compensation resistor network resistance on bridge arm R4 sides that obtains, Rp-55For the bridge arm of -55 DEG C of acquisitions
The compensation resistor network resistance on R4 sides, β is the temperature coefficient of negative tempperature coefficient thermistor Rn；Rq25For 25 DEG C when the bridge that obtains
The compensation resistor network resistance on arm R1 sides, Rq150For 150 DEG C when the compensation resistor network resistance on bridge arm R1 sides that obtains, α is for just
The temperature coefficient of temperature coefficient thermistor Rn.Each compensation resistor network value is obtained by calculating, Rb is 610K Ω, and Rc is 465K
Ω, Rd are 970K Ω, and Re is 690K Ω, and Rn is 22K Ω, and Rt is 22K Ω.
(10) compensation circuit is built, and performance verification is carried out in -55 DEG C, -40 DEG C, 20 DEG C, 0 DEG C, 25 DEG C, 70 DEG C, 150 DEG C
Test.
Fig. 5 is the error characteristics curve chart before and after 1MPa silicon pressure sensors are compensated under specified excitation voltage source.From figure
In understand, there is larger temperature drift in sensor, at -55 DEG C, its error is maximum, has reached -3.4mV before temperature drift compensation is carried out.
After temperature drift compensation, in the range of -55 DEG C～150 DEG C of its operating temperature, performance has obtained larger raising to sensor, -55
DEG C there is maximum error for 1.14mV.
In sum, the present invention provide silicon pressure sensor temperature drift compensation method can realize silicon pressure sensor-
Temperature drift compensation in 55 DEG C～150 DEG C temperature ranges, improves its certainty of measurement in -55 DEG C～150 DEG C.
Claims (1)
1. a kind of method for building silicon pressure sensor temperature drift compensation circuit, including Ra, Rb, Rc, Rd, Re, Rn, Rt, wherein Ra,
Rb, Rc, Rd, Re are the compensation resistor network being made up of one or more resistance, and Rn is single negative tempperature coefficient thermistor,
Rt is single semistor, and voltage source input Vcc is input into by Ra with the excitation power supply of silicon pressure sensor
Anode Uin is connected, and Ra connects with the whole electric bridge of silicon pressure sensor；Rc is in parallel then with Rb Rq in series with Rt, Rq's
One end is connected with excitation power supply input positive terminal Uin, and the other end of Rq is connected with output signal anode Uo+, and Rq is passed with Silicon pressure
Sensor bridge arm R1 realizes in parallel；Re is in parallel then with Rd Rp in series, one end and excitation power supply input positive terminal Uin of Rp with Rn
It is connected, the other end and the output signal negative terminal U of RpO-It is connected, Rp realizes parallel connection with silicon pressure sensor bridge arm R4,
Characterized in that, comprising the steps：
(1) build for the calibration system of silicon pressure sensor temperature drift compensation；
(2) silicon pressure sensor is put in calorstat, is heated to 25 DEG C and is kept for two hours, under specified excitation voltage source,
Read zero pressure and the output pressure signal value at full-scale pressure moment；
(3) Ra values are adjusted, completes the sensitivity compensation under room temperature；
(4) Rp, Rq value is adjusted, completes room temperature zero compensation；
(5) calorstat temperature is adjusted to -55 DEG C, cools to the temperature and is kept for two hours, reads the moment zero pressure and full scale
Output pressure signal value；
(6) Rp values are adjusted again, realize -55 DEG C of zero compensations；
(7) calorstat temperature is adjusted to 150 DEG C, is warmed up to the temperature and is kept for two hours, reads the moment zero pressure and full scale
Output pressure signal value；
(8) Rq values, Rp values are adjusted again and use 25 DEG C of moment values, realize 150 DEG C of zero compensations；
(9) according to 25 DEG C, -55 DEG C and 150 DEG C compensation resistance informations Rp for obtaining25、Rp-55、Rq25And Rq150, choose Rn and
Rt simultaneously calculates the value of Rb, Rc, Rd, Re, can be derived by equation below：
Wherein Rp25For 25 DEG C when the compensation resistor network resistance on bridge arm R4 sides that obtains, Rp-55For the bridge arm R4 sides of -55 DEG C of acquisitions
Compensation resistor network resistance, β for negative tempperature coefficient thermistor Rn temperature coefficient；Rq25For 25 DEG C when the bridge arm R1 that obtains
The compensation resistor network resistance on side, Rq150For 150 DEG C when the compensation resistor network resistance on bridge arm R1 sides that obtains, α is positive temperature
The temperature coefficient of coefficient resistance Rn；
(10) Ra, Rb, Rc, Rd, Re, Rn, Rt and the temperature drift compensation circuit for building are obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410776104.1A CN104458121B (en) | 2014-12-15 | 2014-12-15 | Silicon pressure sensor temperature excursion compensating circuit and circuit establishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410776104.1A CN104458121B (en) | 2014-12-15 | 2014-12-15 | Silicon pressure sensor temperature excursion compensating circuit and circuit establishing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104458121A CN104458121A (en) | 2015-03-25 |
| CN104458121B true CN104458121B (en) | 2017-04-19 |
Family
ID=52904539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410776104.1A Active CN104458121B (en) | 2014-12-15 | 2014-12-15 | Silicon pressure sensor temperature excursion compensating circuit and circuit establishing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104458121B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104913829A (en) * | 2015-07-07 | 2015-09-16 | 国网上海市电力公司 | Single crystal silicon piezoresistive type online oil level detector |
| CN106441644A (en) * | 2016-05-25 | 2017-02-22 | 南京高华科技股份有限公司 | Silicon piezoresistive pressure sensor temperature drift compensation method |
| US10337942B2 (en) * | 2016-08-08 | 2019-07-02 | Honeywell International Inc. | Pressure sensor temperature coefficient offset adjustment |
| CN109287049B (en) * | 2018-10-16 | 2019-12-27 | 中国航发南方工业有限公司 | Formation lamp temperature drift compensation circuit, formation lamp control circuit and formation lamp control device |
| CN109668674B (en) * | 2019-02-26 | 2023-10-03 | 厦门乃尔电子有限公司 | High-precision temperature compensation circuit and method for silicon piezoresistive pressure sensor |
| CN110823446B (en) * | 2019-10-18 | 2022-01-07 | 成都凯天电子股份有限公司 | Secondary temperature compensation zero debugging method for silicon piezoresistive pressure sensor |
| CN111175542B (en) * | 2019-12-12 | 2021-04-30 | 江苏集萃微纳自动化系统与装备技术研究所有限公司 | Temperature compensation method for Wheatstone bridge as AFM position sensor |
| CN111238698B (en) * | 2020-02-27 | 2021-10-22 | 中国科学院微电子研究所 | Built-in self-testing device and testing method of MEMS piezoresistive sensor |
| CN112414594B (en) * | 2020-11-09 | 2022-04-01 | 中国电子科技集团公司第四十九研究所 | Temperature error correction method for silicon piezoresistive pressure sensor |
| CN112965566A (en) * | 2021-02-22 | 2021-06-15 | 重庆湃芯创智微电子有限公司 | Temperature coefficient reduction circuit for zero-pressure differential output offset of high-precision pressure sensor |
| CN115931010A (en) * | 2022-12-28 | 2023-04-07 | 武汉航空仪表有限责任公司 | Method and circuit for compensating nonlinearity of output temperature curve of silicon piezoresistive sensor |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3520652B2 (en) * | 1996-02-08 | 2004-04-19 | 株式会社デンソー | Semiconductor force sensor |
| JP4710119B2 (en) * | 2000-10-27 | 2011-06-29 | Ｎｏｋ株式会社 | Sensor circuit |
| CN101865748A (en) * | 2010-06-28 | 2010-10-20 | 山东佰测仪表有限公司 | Normalization compensation method of diffusion silicon pressure sensor |
| US8701460B2 (en) * | 2011-03-31 | 2014-04-22 | Freescale Semiconductor, Inc. | Method and system to compensate for temperature and pressure in piezo resistive devices |
| CN202229863U (en) * | 2011-07-04 | 2012-05-23 | 程方舟 | Compensation circuit of pressure sensor |
| CN103048085B (en) * | 2011-10-13 | 2015-08-19 | 贾庆锋 | Temperature compensation system for pressure sensors and temperature compensation thereof |
-
2014
- 2014-12-15 CN CN201410776104.1A patent/CN104458121B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN104458121A (en) | 2015-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104458121B (en) | Silicon pressure sensor temperature excursion compensating circuit and circuit establishing method | |
| CN102829888B (en) | Method for eliminating three-wire heating resistor measurement errors | |
| CN105676163B (en) | A kind of electric energy meter is from heat affecting error compensating method | |
| CN203037265U (en) | Temperature compensating circuit | |
| CN103604525B (en) | A kind of thermal resistance temperature surveying instrument based on checking data | |
| CN109375291B (en) | Temperature, air pressure and humidity measuring device and method suitable for sonde | |
| CN105651409A (en) | Thermocouple cold junction compensation and temperature measurement circuit and device | |
| CN203323910U (en) | High-precision temperature signal measuring circuit | |
| CN104970776B (en) | A kind of body temperature detection method and a kind of Dynamic High-accuracy calibration electric body-temperature counter device | |
| CN203216628U (en) | Temperature measuring device | |
| CN105890793A (en) | Three-wire Pt100 platinum resistance temperature measurement circuit | |
| CN104697659A (en) | Temperature measuring device and method using NTC thermistor | |
| CN101828100B (en) | Temperature measurement circuit in flowmeter | |
| CN104101392A (en) | Flow sensor with improved linear output | |
| CN107132417A (en) | A kind of precision resister measuring method of reactive circuit parameter drift | |
| CN106840287B (en) | Flow sensor, flowmeter and flow detection method | |
| SE427502B (en) | VERMEGENOMGANGSMETARE | |
| US11340272B2 (en) | Apparatus and method for determining a power value of a target | |
| CN105571590B (en) | A kind of fusion compensation method | |
| CN204043810U (en) | A kind of thermocouple signal cold junction compensation device | |
| CN216696437U (en) | Circuit for improving resistance sampling current precision | |
| CN116499631A (en) | Compensation circuit and compensation method for temperature of constant-current power supply pressure sensor | |
| CN113932889A (en) | Intelligent fuel metering and correcting device based on turbine flowmeter | |
| CN2886578Y (en) | Thermal anemometer | |
| CN219956740U (en) | Temperature field verification device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: No. 999, Xuefu Road, Xindu, Chengdu, Sichuan 610500 Patentee after: AECC SICHUAN GAS TURBINE Research Institute Address before: 621703 operation monitoring department, mailbox 305, Jiangyou, Sichuan, Mianyang, Sichuan Patentee before: CHINA GAS TURBINE EST |