CN104451557A - Photoelectric position sensing material with ultrahigh response speed and preparation method thereof - Google Patents

Photoelectric position sensing material with ultrahigh response speed and preparation method thereof Download PDF

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Publication number
CN104451557A
CN104451557A CN201410735056.1A CN201410735056A CN104451557A CN 104451557 A CN104451557 A CN 104451557A CN 201410735056 A CN201410735056 A CN 201410735056A CN 104451557 A CN104451557 A CN 104451557A
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metal oxide
position sensing
sensing material
response speed
fast response
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王先杰
宋炳乾
王阳
刘志国
隋郁
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Harbin Institute of Technology
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Harbin Institute of Technology
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/085—Oxides of iron group metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth

Abstract

The invention provides a photoelectric position sensing material with ultrahigh response speed and a preparation method of the material, belongs to the field of sensors, and solves the problems that the position sensitivity and the response speed of the existing photoelectric position sensing material are low. The photoelectric position sensing material is of a metal oxide-SiO2-Si three-layer structure, a metal oxide layer is deposited on a Si substrate by utilizing laser pulse, and the metal oxide is Fe3O4, ZnO or TiO2. The preparation method comprises the following steps: (1) washing the Si substrate in ultrasonic waves; (2) grinding and tabletting metal oxide powder, and sintering metal oxide tablets to obtain a metal oxide target material; and (3) irradiating the metal oxide target material by utilizing an excimer laser, depositing the metal oxide layer on the Si substrate by using pulsed laser, and controlling the temperature to room temperature after the deposition is completed. The position sensitivity of the photoelectric position sensing material provided by the invention reaches 54 mV/mm under 1-mW laser irradiation, and the peak width at half height is about 5 microseconds.

Description

Optoelectronic position sensing material with super fast response speed and preparation method thereof
Technical field
The invention belongs to sensor field, be specifically related to the position sensing material and preparation method thereof based on side direction photovoltaic effect.
Background technology
Schokky has found side direction photovoltaic (lateral photovoltage, LPV) phenomenon in nineteen thirty, and nineteen fifty-seven, Wallmark was at p +the linear dependence of Late Cambrian between side direction photovoltaic size and light position in-n knot has also made physical interpretation.Side direction photovoltaic effect not only has extraordinary linear relationship with light position, and there is very high position-sensitivity, this just makes side direction photovoltaic effect can be applicable to multiple sensitive optical sensor, especially most crucial in position sensitive device (position-sensitivedetectors, PSD) part.
Position sensitive utensil has that position resolution is high, fast response time, the advantages such as spectral response range is wide, treatment circuit is simple, be widely used in many fields such as industry, military affairs, scientific research, especially the catching of spatial beam, follow the tracks of, aim at and in location etc., there is important effect.Although entered the period of a comparative maturity in the world to the research and development of position sensitive device, the fast not shortcoming of its response speed has not been overcome all the time.The fastest position sensitive device of current response speed is the OD6-7 type One-dimensional position sensitive device of German Silicon Sensor GmbH company exploitation, its time of response is 0.2 μ s, still the mating operation of the specific demand, particularly high-speed running objects that many needs respond fast can not be met.
Summary of the invention
The present invention is the problem that position-sensitivity is lower and response speed is slow in order to solve existing optoelectronic position sensing material, and provides optoelectronic position sensing material with super fast response speed and preparation method thereof.
The optoelectronic position sensing material that the present invention has super fast response speed has metal oxide-SiO 2-Si three-decker, adopt pulsed laser deposition to have thickness to be the metal oxide layer of 10 ~ 80nm on si substrates, metal oxide is wherein Fe 3o 4, ZnO or TiO 2, SiO 2layer is Si substrate self-assembling formation in atmosphere.
The preparation method that the present invention has the optoelectronic position sensing material of super fast response speed follows these steps to realize:
One, Si substrate is put in HF solution and soak 10 ~ 20min, then utilize ultrasonic cleaner that Si sheet is put into acetone successively and dehydrated alcohol cleans 10 ~ 20min respectively, obtain the Si substrate after cleaning;
Two, by tabletted after metal oxide powder grinding, then at the temperature of 800 ~ 1000 DEG C, sintering processes is carried out to metal oxide compressing tablet, obtain metal oxide target;
Three, base vacuum is evacuated to 3 × 10 -4pa ~ 5 × 10 -4pa, passing into pure oxygen control air pressure is 0.1 ~ 10Pa, the temperature regulating Si substrate is 350 ~ 500 DEG C, excimer laser is adopted to irradiate metal oxide target, pulsed laser deposition thickness is the metal oxide layer of 10 ~ 50nm on si substrates, deposition terminates rear insulation 20 ~ 30min, finally naturally cools to room temperature, obtains the optoelectronic position sensing material with super fast response speed;
Metal oxide wherein described in step 2 is Fe 3o 4, ZnO or TiO 2.
The present invention's optoelectronic position sensing material with super fast response speed and preparation method thereof comprises following advantage:
1, metal oxide is cheap and easy to get, and stable chemical nature;
2, the position-sensitivity of this optoelectronic position sensing material has been issued to 54mV/mm in the laser radiation of 1mW, is highly sensitively applicable to being applied in position sensitive device;
3, the positive rise of the side direction photovoltaic response of this optoelectronic position sensing material is 60ns, peak width at half height at 5 μ about s, far away higher than the most high target 200ns of current position sensor;
4, existing Si based semiconductor device technology maturation, this optoelectronic position sensing arrangement very easily combines with existing semiconducter process.
Accompanying drawing explanation
Fig. 1 is the structural representation of side direction photovoltaic position-sensitivity test, wherein 1-mono-colour laser, 2-beam expanding lens, 3-convex lens, 4-two-dimension translational platform;
Fig. 2 is the local structure schematic diagram of side direction photovoltaic position-sensitivity test, wherein 5-six Semi-digital multimeters;
Fig. 3 is the structural representation of side direction photovoltaic test time response, wherein 1-femto-second laser, 2-femtosecond laser test platform, 3-two-dimension translational platform;
Fig. 4 is the local structure schematic diagram of side direction photovoltaic test time response, wherein 4-variohm, 5-digital oscilloscope;
Fig. 5 is the graph of a relation between embodiment one to three side direction photovoltaic and facula position, wherein the optoelectronic position sensing material of 1-embodiment one, the optoelectronic position sensing material of 2-embodiment two, the optoelectronic position sensing material of 3-embodiment three;
Fig. 6 be embodiment one non-loaded time side direction photovoltaic test curve figure time response;
Fig. 7 is test curve figure time response of embodiment one side direction photovoltaic when having a load.
Embodiment
Embodiment one: the optoelectronic position sensing material that present embodiment has super fast response speed has metal oxide-SiO 2-Si three-decker, adopt pulsed laser deposition to have thickness to be the metal oxide layer of 10 ~ 80nm on si substrates, metal oxide is wherein Fe 3o 4, ZnO or TiO 2, SiO 2layer is Si substrate self-assembling formation in atmosphere.
Present embodiment utilizes metal oxide-oxide compound-semi-conductor (MOS) structure as the core component of position sensitive device, under the prerequisite keeping higher position sensitivity, the large built in field formed between metal oxide and semi-conductor is utilized to carry out the right mode in sharp separation electronics-hole to improve photovoltaic response speed.
Embodiment two: present embodiment and embodiment one have thickness to be the metal oxide layer of 10 ~ 40nm unlike adopting pulsed laser deposition on si substrates.
Embodiment three: present embodiment and embodiment two have thickness to be the metal oxide layer of 10 ~ 30nm unlike adopting pulsed laser deposition on si substrates.
Embodiment four: one of present embodiment and embodiment one to three are unlike SiO 2the thickness of layer is 1 ~ 5nm.
Embodiment five: the preparation method that present embodiment has the optoelectronic position sensing material of super fast response speed follows these steps to implement:
One, Si substrate is put in HF solution and soak 10 ~ 20min, then utilize ultrasonic cleaner that Si sheet is put into acetone successively and dehydrated alcohol cleans 10 ~ 20min respectively, obtain the Si substrate after cleaning;
Two, by tabletted after metal oxide powder grinding, then at the temperature of 800 ~ 1000 DEG C, sintering processes is carried out to metal oxide compressing tablet, obtain metal oxide target;
Three, base vacuum is evacuated to 3 × 10 -4pa ~ 5 × 10 -4pa, passing into pure oxygen control air pressure is 0.1 ~ 10Pa, the temperature regulating Si substrate is 350 ~ 500 DEG C, excimer laser is adopted to irradiate metal oxide target, pulsed laser deposition thickness is the metal oxide layer of 10 ~ 50nm on si substrates, deposition terminates rear insulation 20 ~ 30min, finally naturally cools to room temperature, obtains the optoelectronic position sensing material with super fast response speed;
Metal oxide wherein described in step 2 is Fe 3o 4, ZnO or TiO 2.
Present embodiment utilizes pulsed laser deposition method to prepare metal oxide on si substrates (as Fe 3o 4, ZnO etc.) film, form MOS structure, realize the preparation of high-quality thin film by controlling the modes such as laser power, depositing temperature and atmosphere thus form good built in field; Loop is formed to observe the photovoltaic effect response speed of MOS as power supply and pull-up resistor using the side direction photovoltaic that metal-oxide-semiconductor is formed.
Embodiment six: the mass concentration of the HF solution that present embodiment and embodiment five use unlike step one is 20%.Other step and parameter identical with embodiment five.
Embodiment seven: present embodiment and embodiment five or six control excimer laser unlike step 3, and output wavelength is 248nm, and energy is 50 ~ 200mJ, frequency 1 ~ 5Hz.Other step and parameter identical with embodiment five or six.
Embodiment eight: present embodiment and embodiment seven control excimer laser unlike step 3, and output wavelength is 248nm, and energy is 200mJ, frequency 3Hz.Other step and parameter identical with embodiment seven.
Embodiment one: the preparation method that the present embodiment has the optoelectronic position sensing material of super fast response speed follows these steps to realize:
One, Si substrate is put into mass concentration be 20% HF solution in soak 10min, then utilize ultrasonic cleaner that Si sheet is put into acetone successively and dehydrated alcohol cleans 10min respectively, obtain the Si substrate after cleaning;
Two, by metal oxide α-Fe 2o 3tabletted after powder mull, then carries out sintering processes 12h to metal oxide compressing tablet, obtains metal oxide target at the temperature of 1000 DEG C;
Three, base vacuum is evacuated to 4 × 10 -4pa, passing into pure oxygen control air pressure is 1Pa, and the temperature regulating Si substrate is 350 DEG C, adopts Compex 201 type KrF excimer laser to irradiate Fe 3o 4metal oxide target, control output wavelength is 248nm, and energy is 200mJ, and frequency is 3Hz, and pulsed laser deposition thickness is the Fe of 20nm on si substrates 3o 4layer, deposition terminates rear insulation 20min, finally naturally cools to room temperature, obtains the optoelectronic position sensing material with super fast response speed.
The optoelectronic position sensing material that the present embodiment obtains is Fe 3o 4-SiO 2-Si structure.
Embodiment two: the present embodiment and embodiment one unlike step 3 on si substrates pulsed laser deposition thickness be the Fe of 40nm 3o 4layer.
Embodiment three: the present embodiment and embodiment one unlike step 3 on si substrates pulsed laser deposition thickness be the Fe of 60nm 3o 4layer.
Building of side direction photovoltaic position-sensitivity testing apparatus:
By helium-neon laser, (wavelength is 632.8nm, power is 1mW) be fixed on a fixed support, the lens being 1cm by a focal length again after beam expanding lens are placed in light path, LASER SPECKLE being converged in a diameter on film is about on the point of 1mm, two pieces of indium metal are pressed in film surface as electrode, and electrode diameter is less than 0.5mm.Utilize precise 2-D translation stage to realize the change of light position, test process carries out in darkroom.The structure iron of concrete testing apparatus as shown in Figure 1.
The optoelectronic position sensing material that embodiment one prepares is under the laser radiation of 1mW power, and its position-sensitivity reaches 54mV/mm.
The test of side direction photovoltaic time resolution characteristics:
Utilize fs-laser system (Nd:YAG laser apparatus), wavelength 1064nm (can obtain the laser of 532nm through frequency doubling technology), oscilloscope model is general source DS2000 digital oscilloscope, test metal oxide-SiO 2-Si structure side is to the time resolution characteristics of photovoltaic.The structural representation of side direction photovoltaic test time response as Figure 2-3, is formed loop to observe the photovoltaic response time of MOS using the side direction photovoltaic formed as power supply and tunable load resistance.
The present embodiment uses fs-laser system to carry out the time discrimination measurement of photovoltaic, and the resistance of one 50 ohm in parallel is as load.The positive rise of measured photovoltaic response is 60ns.
Embodiment four: the preparation method that the present embodiment has the optoelectronic position sensing material of super fast response speed follows these steps to realize:
One, Si substrate is put into mass concentration be 20% HF solution in soak 10min, then utilize ultrasonic cleaner that Si sheet is put into acetone successively and dehydrated alcohol cleans 10min respectively, obtain the Si substrate after cleaning;
Two, by tabletted after the grinding of metal oxide ZnO powder, then at the temperature of 800 DEG C, sintering processes 12h is carried out to metal oxide compressing tablet, obtain metal oxide target;
Three, base vacuum is evacuated to 4 × 10 -4pa, passing into pure oxygen control air pressure is 1Pa, the temperature regulating Si substrate is 400 DEG C, and adopt Compex 201 type KrF excimer laser to irradiate ZnO metal oxide target, control output wavelength is 248nm, energy is 200mJ, frequency is 3Hz, and pulsed laser deposition thickness is the ZnO layer of 30nm on si substrates, and deposition terminates rear insulation 20min, finally naturally cool to room temperature, obtain the optoelectronic position sensing material with super fast response speed.
The optoelectronic position sensing material that the present embodiment obtains is ZnO-SiO 2-Si structure.This structured material is under the 532nm laser radiation of 5mW power, and its position-sensitivity reaches 12.5mV/mm.
Embodiment five: the preparation method that the present embodiment has the optoelectronic position sensing material of super fast response speed follows these steps to realize:
One, Si substrate is put into mass concentration be 20% HF solution in soak 10min, then utilize ultrasonic cleaner that Si sheet is put into acetone successively and dehydrated alcohol cleans 10min respectively, obtain the Si substrate after cleaning;
Two, by metal oxide TiO 2compressing tablet after powder mull 1h, then obtains metal oxide target after 1000 DEG C of sintering 12h;
Three, base vacuum is evacuated to 4 × 10 -4pa, passing into pure oxygen control air pressure is 1Pa, and the temperature regulating Si substrate is 500 DEG C, adopts Compex 201 type KrF excimer laser to irradiate TiO 2metal oxide target, control output wavelength is 248nm, and energy is 200mJ, and frequency is 3Hz, and pulsed laser deposition thickness is the TiO of 15nm on si substrates 2layer, deposition terminates rear insulation 20min, finally naturally cools to room temperature, obtains the optoelectronic position sensing material with super fast response speed.
The optoelectronic position sensing material that the present embodiment obtains is TiO 2-SiO 2-Si structure.This structured material under the 632nm laser radiation of 3mW power, its position-sensitivity 20mV/mm nearly.

Claims (8)

1. there is the optoelectronic position sensing material of super fast response speed, it is characterized in that the optoelectronic position sensing material that this has super fast response speed has metal oxide-SiO 2-Si three-decker, adopt pulsed laser deposition to have thickness to be the metal oxide layer of 10 ~ 80nm on si substrates, metal oxide is wherein Fe 3o 4, ZnO or TiO 2, SiO 2layer is Si substrate self-assembling formation in atmosphere.
2. the optoelectronic position sensing material with super fast response speed according to claim 1, is characterized in that adopting on si substrates pulsed laser deposition to have thickness to be the metal oxide layer of 10 ~ 40nm.
3. the optoelectronic position sensing material with super fast response speed according to claim 2, is characterized in that adopting on si substrates pulsed laser deposition to have thickness to be the metal oxide layer of 10 ~ 30nm.
4. the optoelectronic position sensing material with super fast response speed according to claim 1, is characterized in that SiO 2the thickness of layer is 1 ~ 5nm.
5. there is the preparation method of the optoelectronic position sensing material of super fast response speed, it is characterized in that following these steps to realize:
One, Si substrate is put in HF solution and soak 10 ~ 20min, then utilize ultrasonic cleaner that Si sheet is put into acetone successively and dehydrated alcohol cleans 10 ~ 20min respectively, obtain the Si substrate after cleaning;
Two, by tabletted after metal oxide powder grinding, then at the temperature of 800 ~ 1000 DEG C, sintering processes is carried out to metal oxide compressing tablet, obtain metal oxide target;
Three, base vacuum is evacuated to 3 × 10 -4pa ~ 5 × 10 -4pa, passing into pure oxygen control air pressure is 0.1 ~ 10Pa, the temperature regulating Si substrate is 350 ~ 500 DEG C, excimer laser is adopted to irradiate metal oxide target, pulsed laser deposition thickness is the metal oxide layer of 10 ~ 50nm on si substrates, deposition terminates rear insulation 20 ~ 30min, finally naturally cools to room temperature, obtains the optoelectronic position sensing material with super fast response speed;
Metal oxide wherein described in step 2 is Fe 3o 4, ZnO or TiO 2.
6. the preparation method with the optoelectronic position sensing material of super fast response speed according to claim 5, is characterized in that the mass concentration of the HF solution that step one uses is 20%.
7. the preparation method with the optoelectronic position sensing material of super fast response speed according to claim 5, it is characterized in that step 3 controls excimer laser, output wavelength is 248nm, and energy is 50 ~ 200mJ, frequency 1 ~ 5Hz.
8. the preparation method with the optoelectronic position sensing material of super fast response speed according to claim 7, it is characterized in that step 3 controls excimer laser, output wavelength is 248nm, and energy is 200mJ, frequency 3Hz.
CN201410735056.1A 2014-12-04 2014-12-04 Photoelectric position sensing material with ultrahigh response speed and preparation method thereof Pending CN104451557A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110297030A (en) * 2019-08-02 2019-10-01 盐城工学院 A kind of construction method of highly selective progesterone Photoelectrochemistrbiosensor biosensor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
程家忠 等: "AZO-SiO2-Si材料中二维侧向光伏效应的研究", 《稀有金属》 *
蔡炜: "Fe3O4-SiO2-Si结构反型层输运特性的研究", 《万方》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110297030A (en) * 2019-08-02 2019-10-01 盐城工学院 A kind of construction method of highly selective progesterone Photoelectrochemistrbiosensor biosensor
CN110297030B (en) * 2019-08-02 2021-11-16 盐城工学院 Construction method of high-selectivity progesterone photoelectrochemical biosensor

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Application publication date: 20150325