CN104451261A - Target material of anti-electromagnetic wave interference alloy film - Google Patents
Target material of anti-electromagnetic wave interference alloy film Download PDFInfo
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- CN104451261A CN104451261A CN201410494137.7A CN201410494137A CN104451261A CN 104451261 A CN104451261 A CN 104451261A CN 201410494137 A CN201410494137 A CN 201410494137A CN 104451261 A CN104451261 A CN 104451261A
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- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 35
- 239000000956 alloy Substances 0.000 title claims abstract description 35
- 239000013077 target material Substances 0.000 title abstract description 11
- 239000011701 zinc Substances 0.000 claims abstract description 51
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 49
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 45
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 24
- 229910052796 boron Inorganic materials 0.000 claims abstract description 12
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 12
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 6
- 239000004411 aluminium Substances 0.000 claims description 44
- 239000010936 titanium Substances 0.000 claims description 29
- 230000008018 melting Effects 0.000 claims description 21
- 238000002844 melting Methods 0.000 claims description 21
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 239000011651 chromium Substances 0.000 claims description 11
- 229910052582 BN Inorganic materials 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 238000003723 Smelting Methods 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000007769 metal material Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910001297 Zn alloy Inorganic materials 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910007570 Zn-Al Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000007499 fusion processing Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- -1 this Chemical compound 0.000 description 2
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- QQHSIRTYSFLSRM-UHFFFAOYSA-N alumanylidynechromium Chemical compound [Al].[Cr] QQHSIRTYSFLSRM-UHFFFAOYSA-N 0.000 description 1
- 235000019504 cigarettes Nutrition 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 229960004643 cupric oxide Drugs 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012407 engineering method Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Abstract
The invention provides a target material of an anti-electromagnetic wave interference alloy film. The target material of the anti-electromagnetic wave interference alloy film is prepared by smelting the main components of the alloy on a target in a smelting mode, wherein the main alloy comprises the following components: 59-97 wt% zinc, 3-40 wt% aluminum, and 0.005-1 wt% of an alterant, wherein the alterant is selected from the group consisting of Zn, Al, Ti, C, B, N, Zr, Cr, and any combination thereof.
Description
Technical field
The present invention, about a kind of sputter target, refers to the target of a kind of anti-electromagnetic wave interference alloy firm especially.
Background technology
Although cabinet texture is not as metal chassis, but due to its have relative light weight, can be one-body molded with method of radiation, in addition, cabinet texture can be improved through plating metallic film, and cabinet is compared with metal chassis CP value, cabinet is cheaply many, therefore, in known 3C Product, cabinet occupies a tiny space always.Particularly when 3C Product market life circle classifies as middle low order, cabinet city accounting is just higher.
Cabinet is except above-mentioned texture is not as metal chassis, and need through outside metal coating improvement, another shortcoming is that hertzian wave can penetrate cabinet, therefore, as the casing of 3C Product, needs to be overcome by electromagnetic wave proof film.For avoiding follow-up engineering method to increase cost, detract its competitive power to metal chassis, and the simplest mode is the anti-tampering film of hertzian wave on direct plating, also can increase metal-like simultaneously.
In prior art, it is an option that plated copper film adds a stainless steel membrane again, and plated copper film has low resistive, and stainless steel membrane can prevent cupric oxide from generating.But copper is not so good to plastics tack, it is the combined type sputter target proposing in the TaiWan, China patent of 99142728 mutually to inlay with aluminum and zinc at the application numbers of 2010, wherein in an embodiment, the material of metal level belongs to the material of nonferromagnetic, selects the group from aluminium, titanium, zinc, chromium and arbitrary combination thereof.These materials all have a kind of denominator, are exactly idiopathicly to form fine and close zone of oxidation at layer on surface of metal after the film was formed, and the material of metal level can be selected from the one in the group that aluminium, titanium, zinc, chromium and arbitrary combination thereof form.Or be selected from gunmetal, copper zinc alloy or X alloy, thickness is approximately 100nm to 1500nm.
Wherein, when metal layer material is alloy, selected target forms the combined type sputter target that two kinds of pure metal are inlayed mutually.Further, if using zinc or zinc alloy as metal layer material time, when sputter, zinc or zinc alloy target are heated to about 150 to 300 DEG C, to improve sputtering yield.
In an embodiment wherein, zinc alloy, based on zinc, adds the one in the group that the aluminium of 3 to 50 weight percents, chromium, titanium, copper and arbitrary combination thereof formed, and is wherein that aluminium zinc is for the best with the material of metal level.
In another embodiment, using aluminum titanium alloy or aluminum chromium as electromagnetic wave proof layer, titanium or chromium can increase the sticking power being attached to plastic casing.
In above-mentioned patent application case, the alloys target that sputter uses is inserted composite target material.Wherein a preferred embodiment can refer to Fig. 1 and Fig. 2, inserted composite target material selects the first metallic substance 30 as base material, base material dug out at least one hole 300 by sputter face, and one second metallic substance 31 close-fitting is embedded in hole 300, form the combined type sputter target that two kinds of pure metal are inlayed mutually.Second metallic substance 31 also screw or other locked mechanisms can be attached to the first metallic substance 30, is combined into a target.
The complex manufacturing technology of above-mentioned inserted composite target material, and conductive paste bombing target region must be drawn, therefore, increase the complexity of operating device.
In sum, provide a kind of manufacture craft simpler and become a kind of needs without the need to drawing the target material in conductive paste bombing target region and preparation method thereof in making processes.
Summary of the invention
The object of this invention is to provide target of a kind of anti-electromagnetic wave interference alloy firm and preparation method thereof.This target chooses the composition of two kinds of metals of predetermined proportion, directly makes with smelting process.Electricity slurry deliberately need not be allowed to bombard predetermined position, be the generation avoiding fusion process to cause dendritic crystal, and add alterant.
The target of anti-electromagnetic wave interference alloy firm of the present invention, target is, in the mode of melting, alloy is mainly formed melting on a target, it at least comprises: the zinc (Zn) of 59wt%-97wt%, the aluminium (Al) of 3wt%-40wt%, and the alterant of 0.005wt%-1wt%, wherein, described alterant comprises aluminium (Al), titanium (Ti), carbon (C), the 0.01wt%-3wt% that titanium accounts for the 0.8wt%-25wt% of described alterant, carbon accounts for described alterant, in described alterant, all the other are aluminium.
In the target of anti-electromagnetic wave interference alloy firm provided by the invention, preferably, the alterant of employing also comprises boron, and boron and carbon are with norbide (B
4c) present, described norbide accounts for the 0.1wt%-7wt% of described alterant.In another embodiment, substitute carbon in alterant with nitrogen, boron and nitrogen are with boron nitride (B
4n) present, described boron nitride accounts for the 0.05wt%-6wt% of described alterant.
The invention provides the target of a kind of anti-electromagnetic wave interference alloy firm, this target is, in the mode of melting, alloy is mainly formed melting on a target, and it at least comprises:
The zinc (Zn) of 59wt%-97wt%, the aluminium (Al) of 3wt%-40wt%, and the alterant of 0.005wt%-1wt%, wherein, this alterant comprises zinc (Zn), titanium (Ti), titanium accounts for the 2wt%-10wt% of this alterant, and in described alterant, all the other are zinc.
In the target of anti-electromagnetic wave interference alloy firm provided by the invention, preferably, in above-mentioned alterant, aluminium accounts for the 2.94wt%-40wt% of described alterant, and makes titanium account for the 4wt%-16wt% of described alterant, and in described alterant, all the other are zinc.
In the target of anti-electromagnetic wave interference alloy firm provided by the invention, preferably, above-mentioned alterant also comprises aluminium, boron and nitrogen, aluminium accounts for the 30wt%-60wt% of described alterant, and make titanium account for the 0.005wt%-6wt% of described alterant, described boron and nitrogen present with boron nitride, described boron nitride (B
4n) account for the 0.0025wt%-3wt% of described alterant, in described alterant, all the other are zinc.
The invention provides the target of a kind of anti-electromagnetic wave interference alloy firm, this target is, in the mode of melting, alloy is mainly formed melting on a target, and it at least comprises:
The zinc of 59wt%-97wt%, the aluminium of 3wt%-40wt%, and the alterant of 0.005wt%-1wt%, wherein, described alterant comprises zinc (Zn), zirconium (Zr), and zirconium accounts for the 0.01wt%-17wt% of described alterant, and in described alterant, all the other are zinc.
The invention provides the target of a kind of anti-electromagnetic wave interference alloy firm, this target is, in the mode of melting, alloy is mainly formed melting on a target, and it at least comprises:
The zinc of 59wt%-97wt%, the aluminium of 3wt%-40wt%, and the alterant of 0.005wt%-1wt%, wherein, described alterant comprises aluminium (Al), zinc (Zn), chromium (Cr), wherein aluminium accounts for the 8wt%-50wt% of described alterant, and chromium accounts for the 0.01wt%-16wt% of described alterant, and in described alterant, all the other are zinc.
According to specific embodiment of the invention scheme, preferably, the interpolation of described alterant adds in the process of melting.
The target tool of anti-electromagnetic wave interference alloy firm provided by the invention has the following advantages:
In target material provided by the invention, be contained in wherein by predetermined target principal constituent zinc and aluminium, add alterant in fusion process, alterant contributes to suppressing the coarse grains in target crystallisation process;
In target material provided by the invention, target principal constituent zinc and aluminium are contained in wherein, (the sputtered rate of zinc is high by the otherness of the sputtering raste of main alloying component during sputter to utilize target, aluminium is relatively much lower) in the early stage the voltage of put on cathode target be beneficial to zinc be sputtered, stage is beneficial to aluminium and is sputtered, make the surface of sputter coating easily generate aluminum oxide like this, predetermined sputter production capacity can be possessed again;
Target provided by the invention by predetermined two kinds of main purpose Metal Meltings in a target, deliberately need not draw conductive paste group in target location, make to spatter control and control more to simplify.
Accompanying drawing explanation
Fig. 1 is that the second damascene is in the schematic diagram of the composition target in target base;
Fig. 2 is another schematic diagram of the composition target of the second damascene in target base.
Main Reference nomenclature
30 first metallic substance 300 hole 31 second metallic substance
Embodiment
For making above-mentioned purpose of the present invention, feature and advantage become apparent, hereafter according to a preferred embodiment of the magnetic control target of the present invention's design, and coordinating appended correlative type, being described in detail below.
Target main component of the present invention is aluminium zinc, and in the process of melting zinc-aluminium conjunction, add the alterant of 0.005-1wt%, alterant be selected from the group be made up of Zn, Al, Ti, C, B, N, Zr, Cr and arbitrary combination thereof any one, to reach the object of upgrading.
In alterant, preferred combination is any one in following (i)-(viii)
I () Al-Ti-C, weight percent: Ti are 0.8-25wt%, C is 0.01-3wt%, and all the other are Al.
(ii) Al-Ti-B-C, weight percent: Ti are 1-20wt%, norbide B
4c is 0.1-7wt%, and all the other are Al.
(iii) Al-Ti-B-N, weight percent: Ti are 1-20wt%, boron nitride B
4n is 0.05-6wt%, and all the other are Al.
(iv) Zn-Ti, weight percent: Zn are 90-98wt%, Ti is 2-10wt%.
V () Zn-Zr, weight percent: Zn are 83-99.99wt%, Zr is 0.01-17wt%.
(vi) Zn-Al-Ti, weight percent: Al are 2.94-40wt%, Ti is 4-16wt%, and all the other are Zn.
(vii) Zn-Al-Cr, weight percent: Al are 8-50wt%, Cr is 0.01-16wt%, and all the other are Zn.
(viii) Zn-Al-Ti-B-N, weight percent: Al are 30-60wt%, Ti is 0.005-6wt%, boron nitride (B
4n) be 0.0025-3wt%, all the other are zinc.
The weight percent listed by alterant of above-mentioned (i)-(viii) be with alterant as 1 time listed.Be combined as example with (i) alterant, titanium is 0.8-25wt%, and carbon is 0.01-3wt%, and remaining is aluminium.In overall target, aluminium comprises the aluminium in aluminium zinc and comprises the contained aluminium in alterant, always amounts to 3-40wt%.And all the other are zinc, namely zinc is about 59wt%-96.995wt%.
Be combined as example with (iv) alterant again, zinc accounts for again 90-98wt% wherein.Titanium is then 2-10wt%.Aluminium in aluminium zinc is about 3-40wt%, and zinc in aluminium zinc and the contained zinc that comprises in alterant, always amount to 59-96.995wt%, and the titanium in alterant is 2-10wt%, namely relative to the 0.02wt%-0.1wt% (when alterant is 1wt%) to 0.0001-0.0005wt% (when alterant is 0.005wt%) of target.
Simple aluminium zinc target, to cast, melting forms.When the weight percent of aluminium contains lower than the hypoeutectic matrix (matrix) of 5wt% Zn-Al sosoloid and the Zn-Al eutectic structure that β phase is rich in Zn (zinc-rich).And wherein β phase sosoloid is very easy to spanning tree Dendritic TiC.
Similarly, when the weight percent of aluminium is greater than 5wt% hypereutectic, the α phase Zn-Al sosoloid being rich in Al (aluminum rich) is also easy to grow up to thick dendritic crystal.In casting cycle, added by alterant, the alterant added becomes the position of the nuclei of crystallization, prevents the development of dendritic crystal.So contribute to target crystallization check figure after casting to increase, reach the object that crystal grain mean diameter reduces.
Adding another object of alterant is reduce the fusing point of aluminium zinc, and smelting temperature is reduced, and particularly causes Zn content to reduce reducing in Zinc smelting process the chance of emitting white cigarette (flying at the zinc oxide in air).
Experiment display, according to manufactured by one embodiment of the invention be used in sputter containing alterant aluminium zinc target time, sputtering thin film initial stage zinc is sputtered and is greater than the sputtered of aluminium, and in sputtering thin film latter stage, extra negative bias can make the most top layer of EMI film be aluminium zinc film based on aluminium on the contrary.And this most surface EMI film, the aluminum oxide film forming rich aluminium component can be impelled.
The present invention has following advantage:
(1) in target material, be contained in wherein by predetermined target principal constituent zinc and aluminium, add alterant in fusion process, alterant contributes to suppressing the coarse grains in target crystallisation process.
(2) in target material, target principal constituent zinc and aluminium are contained in wherein, (the sputtered rate of zinc is high by the otherness of the sputtering raste of main alloying component during sputter to utilize target, aluminium is relatively much lower) voltage that puts on cathode target is in the early stage beneficial to zinc and is sputtered, stage is beneficial to aluminium and is sputtered, make the surface of sputter coating easily generate aluminum oxide like this, predetermined sputter production capacity can be possessed again.
(3) target by predetermined two kinds of main purpose Metal Meltings in a target, deliberately need not draw conductive paste group in target location, make to spatter control and control more to simplify.
The foregoing is only a preferred embodiment of the present invention, and be not used to limit the scope described in claim of the present invention; Under all other do not depart from disclosed spirit, the equivalence that completes changes or modifies, and all should be included in the scope described in claim.
Claims (8)
1. a target for anti-electromagnetic wave interference alloy firm, this target is, in the mode of melting, alloy is mainly formed melting on a target, and it at least comprises:
The zinc of 59wt%-97wt%, the aluminium of 3wt%-40wt%, and the alterant of 0.005wt%-1wt%, wherein said alterant comprises aluminium, titanium, carbon, the 0.01wt%-3wt% that titanium accounts for the 0.8wt%-25wt% of described alterant, carbon accounts for described alterant, in described alterant, all the other are aluminium.
2. the target of anti-electromagnetic wave interference alloy firm according to claim 1, wherein, described alterant also comprises boron, and described boron and carbon present with norbide, and described norbide accounts for the 0.1wt%-7wt% of described alterant.
3. the target of anti-electromagnetic wave interference alloy firm according to claim 1, wherein, substitute carbon in described alterant with nitrogen, boron and described nitrogen present with boron nitride, and described boron nitride accounts for the 0.05wt%-6wt% of described alterant.
4. a target for anti-electromagnetic wave interference alloy firm, this target is, in the mode of melting, alloy is mainly formed melting on a target, and it at least comprises:
The zinc of 59wt%-97wt%, the aluminium of 3wt%-40wt%, and the alterant of 0.005wt%-1wt%, wherein, described alterant comprises zinc, titanium, and titanium accounts for the 2wt%-10wt% of described alterant, and in described alterant, all the other are zinc.
5. the target of anti-electromagnetic wave interference alloy firm according to claim 4, wherein, described alterant also comprises aluminium, and described aluminium accounts for the 2.94wt%-40wt% of described alterant, and making titanium account for the 4wt%-16wt% of described alterant, in described alterant, all the other are zinc.
6. the target of anti-electromagnetic wave interference alloy firm according to claim 4, wherein, described alterant also comprises aluminium, boron and nitrogen, aluminium accounts for the 30wt%-60wt% of described alterant, and make titanium account for the 0.005wt%-6wt% of described alterant, described boron and nitrogen present with boron nitride, and described boron nitride accounts for the 0.0025wt%-3wt% of described alterant, and in described alterant, all the other are zinc.
7. a target for anti-electromagnetic wave interference alloy firm, this target is, in the mode of melting, alloy is mainly formed melting on a target, and it at least comprises:
The zinc of 59wt%-97wt%, the aluminium of 3wt%-40wt%, and the alterant of 0.005wt%-1wt%, wherein, described alterant comprises zinc, zirconium, and zirconium accounts for the 0.01wt%-17wt% of described alterant, and in described alterant, all the other are zinc.
8. a target for anti-electromagnetic wave interference alloy firm, this target is, in the mode of melting, alloy is mainly formed melting on a target, and it at least comprises:
The zinc of 59wt%-97wt%, the aluminium of 3wt%-40wt%, and the alterant of 0.005wt%-1wt%, wherein, described alterant comprises aluminium, zinc, chromium, and aluminium accounts for the 8wt%-50wt% of described alterant, chromium accounts for the 0.01wt%-16wt% of described alterant, and in described alterant, all the other are zinc.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102134407A TW201512437A (en) | 2013-09-24 | 2013-09-24 | Composition of alloy sputtering target for anti-electromagnetic interference film and method of forming the same |
| TW102134407 | 2013-09-24 |
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|---|---|
| CN104451261A true CN104451261A (en) | 2015-03-25 |
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| CN201410494137.7A Pending CN104451261A (en) | 2013-09-24 | 2014-09-24 | Target material of anti-electromagnetic wave interference alloy film |
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| TW (1) | TW201512437A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104818457A (en) * | 2015-04-16 | 2015-08-05 | 山东大学 | Cutter with W-S-C-Zr self-lubricating coating and manufacturing technology thereof |
| CN112301245A (en) * | 2020-10-09 | 2021-02-02 | 济南大学 | Modification treatment method for epsilon phase in zinc-copper alloy |
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| CN101892404A (en) * | 2010-06-21 | 2010-11-24 | 济南大学 | Method for preparing zinc-titanium intermediate alloy |
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| CN102277516A (en) * | 2011-08-16 | 2011-12-14 | 济南大学 | Zn-Al-Ti intermediate alloy and preparation method thereof |
| CN102337506A (en) * | 2011-09-21 | 2012-02-01 | 广州市尤特新材料有限公司 | Manufacturing method of silver alloy sputtering target |
| CN102517477A (en) * | 2011-12-22 | 2012-06-27 | 济南大学 | Preparation methods of intermediate alloys of Al-Ti-B-N and Zn-Al-Ti-B-N and intermediate alloys obtained therethrough |
| CN102703741A (en) * | 2012-06-25 | 2012-10-03 | 济南大学 | Zn-Zr intermediate alloy and preparation method and application thereof |
| CN102719706A (en) * | 2012-06-29 | 2012-10-10 | 济南大学 | Zn-Al-Cr master alloy and preparation method and application thereof |
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| CN104818457A (en) * | 2015-04-16 | 2015-08-05 | 山东大学 | Cutter with W-S-C-Zr self-lubricating coating and manufacturing technology thereof |
| CN112301245A (en) * | 2020-10-09 | 2021-02-02 | 济南大学 | Modification treatment method for epsilon phase in zinc-copper alloy |
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