CN104445205B - 一种用于生产硅及氮化硅纳米颗粒的装置 - Google Patents
一种用于生产硅及氮化硅纳米颗粒的装置 Download PDFInfo
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- CN104445205B CN104445205B CN201410749900.6A CN201410749900A CN104445205B CN 104445205 B CN104445205 B CN 104445205B CN 201410749900 A CN201410749900 A CN 201410749900A CN 104445205 B CN104445205 B CN 104445205B
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- negative electrode
- silicon
- cathode
- silicon nitride
- production
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 38
- 239000002105 nanoparticle Substances 0.000 title claims abstract description 38
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 28
- 239000010703 silicon Substances 0.000 title claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000010453 quartz Substances 0.000 claims abstract description 34
- 239000000498 cooling water Substances 0.000 claims description 17
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 13
- 230000000694 effects Effects 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 229910000831 Steel Inorganic materials 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 8
- 239000010959 steel Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000011229 interlayer Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000002826 coolant Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 230000005495 cold plasma Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 26
- 235000012239 silicon dioxide Nutrition 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 210000002381 plasma Anatomy 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000005543 nano-size silicon particle Substances 0.000 description 10
- 230000005684 electric field Effects 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 235000013339 cereals Nutrition 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 238000002224 dissection Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 240000008042 Zea mays Species 0.000 description 1
- 235000016383 Zea mays subsp huehuetenangensis Nutrition 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 238000001215 fluorescent labelling Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 235000009973 maize Nutrition 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000012716 precipitator Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Silicon Compounds (AREA)
Abstract
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CN201410749900.6A CN104445205B (zh) | 2014-12-10 | 2014-12-10 | 一种用于生产硅及氮化硅纳米颗粒的装置 |
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CN201410749900.6A CN104445205B (zh) | 2014-12-10 | 2014-12-10 | 一种用于生产硅及氮化硅纳米颗粒的装置 |
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CN104445205A CN104445205A (zh) | 2015-03-25 |
CN104445205B true CN104445205B (zh) | 2016-02-10 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN106654161B (zh) * | 2017-02-25 | 2019-04-19 | 中南新能源技术研究院(南京)有限公司 | 一种冷却和烧结一体的锂离子电池材料生产设备 |
CN111354840B (zh) * | 2020-04-22 | 2020-11-03 | 一道新能源科技(衢州)有限公司 | 一种选择性发射极双面perc太阳能电池的制备方法 |
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JP2003020216A (ja) * | 2001-07-03 | 2003-01-24 | Tokuyama Corp | シリコンの製造方法 |
EP1437327B1 (en) * | 2001-10-19 | 2007-04-11 | Tokuyama Corporation | Method for producing silicon |
DE102005042753A1 (de) * | 2005-09-08 | 2007-03-15 | Wacker Chemie Ag | Verfahren und Vorrichtung zur Herstellung von granulatförmigem polykristallinem Silicium in einem Wirbelschichtreaktor |
CN103495366B (zh) * | 2013-10-15 | 2015-07-29 | 江苏中圣高科技产业有限公司 | 颗粒状多晶硅流化床反应器 |
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Effective date of registration: 20160407 Address after: 200092 Shanghai city Yangpu District Guokang Road No. 100 room 1003D Patentee after: Shanghai Xin Xin Nano Technology Co.,Ltd. Address before: 201804 Cao Road 4800, Shanghai, Jiading District Patentee before: Zheng Linglang |
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Effective date of registration: 20211013 Address after: Room 491, building 2, Chuangye building, 66 Yuanshi Road, hi tech Zone, Ningbo, Zhejiang Province, 315000 Patentee after: NINGBO GEXIN NEW ENERGY TECHNOLOGY Co.,Ltd. Address before: Room 1003D, No. 100, Guokang Road, Yangpu District, Shanghai 200092 Patentee before: Shanghai Xin Xin Nano Technology Co.,Ltd. |
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Effective date of registration: 20220209 Address after: No. 588, Chengbei Avenue, Kunlun Street, Liyang City, Changzhou City, Jiangsu Province 213300 Patentee after: LIYANG ZICHEN NEW MATERIAL TECHNOLOGY Co.,Ltd. Address before: Room 491, building 2, Chuangye building, 66 Yuanshi Road, hi tech Zone, Ningbo, Zhejiang Province, 315000 Patentee before: NINGBO GEXIN NEW ENERGY TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20230601 Address after: 330700 Fengxin Industrial Park, Fengxin County, Yichun City, Jiangxi Province Patentee after: JIANGXI ZICHEN TECHNOLOGY Co.,Ltd. Address before: No. 588, Chengbei Avenue, Kunlun Street, Liyang City, Changzhou City, Jiangsu Province 213300 Patentee before: LIYANG ZICHEN NEW MATERIAL TECHNOLOGY Co.,Ltd. |