CN104428895A - 具有数据保持浮栅电容器的硅化集成电路 - Google Patents

具有数据保持浮栅电容器的硅化集成电路 Download PDF

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Publication number
CN104428895A
CN104428895A CN201380033756.XA CN201380033756A CN104428895A CN 104428895 A CN104428895 A CN 104428895A CN 201380033756 A CN201380033756 A CN 201380033756A CN 104428895 A CN104428895 A CN 104428895A
Authority
CN
China
Prior art keywords
electrode
layer
polysilicon
silicide
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201380033756.XA
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English (en)
Chinese (zh)
Inventor
K·刘
A·查特吉
I·M·卡恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CN104428895A publication Critical patent/CN104428895A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Non-Volatile Memory (AREA)
CN201380033756.XA 2012-06-27 2013-06-27 具有数据保持浮栅电容器的硅化集成电路 Pending CN104428895A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/534,865 2012-06-27
US13/534,865 US8779550B2 (en) 2012-06-27 2012-06-27 Analog floating-gate capacitor with improved data retention in a silicided integrated circuit
PCT/US2013/048139 WO2014004797A1 (en) 2012-06-27 2013-06-27 Silicided integrated circuit with data retaining floating-gate capacitor

Publications (1)

Publication Number Publication Date
CN104428895A true CN104428895A (zh) 2015-03-18

Family

ID=49777194

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380033756.XA Pending CN104428895A (zh) 2012-06-27 2013-06-27 具有数据保持浮栅电容器的硅化集成电路

Country Status (5)

Country Link
US (2) US8779550B2 (https=)
EP (1) EP2867921A4 (https=)
JP (1) JP6529906B2 (https=)
CN (1) CN104428895A (https=)
WO (1) WO2014004797A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150364480A1 (en) * 2014-06-12 2015-12-17 Texas Instruments Incorporated Reducing Retention Loss in Analog Floating Gate Memory
US9882065B2 (en) 2014-06-27 2018-01-30 Texas Instruments Incorporated Analog floating-gate atmometer
US9787263B2 (en) 2015-11-23 2017-10-10 Texas Instruments Incorporated Mismatch correction in differential amplifiers using analog floating gate transistors
FR3085540B1 (fr) * 2018-08-31 2020-09-25 St Microelectronics Rousset Dispositif integre de mesure temporelle a constante de temps ultra longue et procede de fabrication
US12094524B2 (en) * 2020-01-30 2024-09-17 Texas Instruments Incorporated Computation in-memory using 6-transistor bit cells
CN114335342B (zh) * 2021-12-16 2025-05-13 上海华虹宏力半导体制造有限公司 一种ppm电容器及其制备方法
US12525986B2 (en) 2023-04-25 2026-01-13 Texas Instruments Incorporated Digital to analog conversion

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10173063A (ja) * 1996-12-10 1998-06-26 Sony Corp 半導体装置およびその製造方法
CN1485889A (zh) * 2002-09-24 2004-03-31 茂德科技股份有限公司 介电层的制造方法
US20060163669A1 (en) * 2005-01-26 2006-07-27 Ki-Seog Youn Method of fabricating semiconductor device having silicide layer and semiconductor device fabricated thereby
US8178915B1 (en) * 2011-03-23 2012-05-15 Texas Instruments Incorporated Unitary floating-gate electrode with both N-type and P-type gates

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3120983B2 (ja) * 1988-05-03 2000-12-25 テキサス インスツルメンツ インコーポレイテツド 集積回路中のキャパシタ
US6617204B2 (en) * 2001-08-13 2003-09-09 Macronix International Co., Ltd. Method of forming the protective film to prevent nitride read only memory cell charging
US6881999B2 (en) * 2002-03-21 2005-04-19 Samsung Electronics Co., Ltd. Semiconductor device with analog capacitor and method of fabricating the same
KR100480469B1 (ko) * 2002-10-17 2005-04-07 동부아남반도체 주식회사 반도체 소자내 커패시터 제조방법
US6964901B2 (en) * 2003-06-03 2005-11-15 Micron Technology, Inc. Methods of forming rugged electrically conductive surfaces and layers
CN1610096A (zh) * 2003-10-21 2005-04-27 上海宏力半导体制造有限公司 利用自行对准金属硅化物制程形成多晶硅电容器的方法
KR100772262B1 (ko) * 2006-07-28 2007-11-01 동부일렉트로닉스 주식회사 반도체 소자의 살리사이드 방지막 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10173063A (ja) * 1996-12-10 1998-06-26 Sony Corp 半導体装置およびその製造方法
CN1485889A (zh) * 2002-09-24 2004-03-31 茂德科技股份有限公司 介电层的制造方法
US20060163669A1 (en) * 2005-01-26 2006-07-27 Ki-Seog Youn Method of fabricating semiconductor device having silicide layer and semiconductor device fabricated thereby
US8178915B1 (en) * 2011-03-23 2012-05-15 Texas Instruments Incorporated Unitary floating-gate electrode with both N-type and P-type gates

Also Published As

Publication number Publication date
JP2015522214A (ja) 2015-08-03
EP2867921A1 (en) 2015-05-06
US20140001526A1 (en) 2014-01-02
JP6529906B2 (ja) 2019-06-12
US20140295631A1 (en) 2014-10-02
WO2014004797A1 (en) 2014-01-03
EP2867921A4 (en) 2016-02-24
US8779550B2 (en) 2014-07-15
US8975135B2 (en) 2015-03-10

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Application publication date: 20150318

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