CN104425636B - 太阳能电池纹理化 - Google Patents

太阳能电池纹理化 Download PDF

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Publication number
CN104425636B
CN104425636B CN201410416203.9A CN201410416203A CN104425636B CN 104425636 B CN104425636 B CN 104425636B CN 201410416203 A CN201410416203 A CN 201410416203A CN 104425636 B CN104425636 B CN 104425636B
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CN
China
Prior art keywords
masking material
liquid
mask
wafer
conduits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201410416203.9A
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English (en)
Chinese (zh)
Other versions
CN104425636A (zh
Inventor
S·J·H·利姆
D·德布勒克
S·加纳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Palo Alto Research Center Inc
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Palo Alto Research Center Inc
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Filing date
Publication date
Application filed by Palo Alto Research Center Inc filed Critical Palo Alto Research Center Inc
Publication of CN104425636A publication Critical patent/CN104425636A/zh
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Publication of CN104425636B publication Critical patent/CN104425636B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
  • Micromachines (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
CN201410416203.9A 2013-09-10 2014-08-21 太阳能电池纹理化 Expired - Fee Related CN104425636B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/023423 2013-09-10
US14/023,423 US8951825B1 (en) 2013-09-10 2013-09-10 Solar cell texturing

Publications (2)

Publication Number Publication Date
CN104425636A CN104425636A (zh) 2015-03-18
CN104425636B true CN104425636B (zh) 2018-06-12

Family

ID=51494169

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410416203.9A Expired - Fee Related CN104425636B (zh) 2013-09-10 2014-08-21 太阳能电池纹理化

Country Status (6)

Country Link
US (1) US8951825B1 (https=)
EP (1) EP2846352B1 (https=)
JP (1) JP6383225B2 (https=)
KR (2) KR20150029552A (https=)
CN (1) CN104425636B (https=)
TW (1) TWI641159B (https=)

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US8870950B2 (en) 2009-12-08 2014-10-28 Mitral Tech Ltd. Rotation-based anchoring of an implant
TWI550886B (zh) * 2015-07-10 2016-09-21 國立屏東科技大學 矽基板表面粗糙化方法
RU2019104002A (ru) 2016-07-22 2020-08-24 Тоа Эйо Лтд. Терапевтическое средство от глаукомы
USD815028S1 (en) * 2016-08-12 2018-04-10 Solaria Corporation Solar cell article
USD815029S1 (en) * 2016-08-12 2018-04-10 Solaria Corporation Solar cell article
USD810676S1 (en) * 2016-08-12 2018-02-20 Solaria Corporation Solar cell article
USD810675S1 (en) * 2016-08-12 2018-02-20 Solaria Corporation Solar cell article
USD817264S1 (en) * 2016-08-12 2018-05-08 Solaria Corporation Solar cell article
WO2020102521A1 (en) * 2018-11-16 2020-05-22 Illumina, Inc. Laminate fluidic circuit for a fluid cartridge
CN111417299B (zh) * 2020-04-13 2021-03-23 温州职业技术学院 电路基板主体制作方法
KR102352056B1 (ko) * 2020-11-04 2022-01-14 한국기술교육대학교 산학협력단 니들이 배열 삽입된 코팅용 헤드

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101657906A (zh) * 2007-02-15 2010-02-24 麻省理工学院 具有纹理表面的太阳能电池

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US5613861A (en) 1995-06-07 1997-03-25 Xerox Corporation Photolithographically patterned spring contact
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KR100378016B1 (ko) 2001-01-03 2003-03-29 삼성에스디아이 주식회사 태양 전지용 반도체 기판의 텍스처링 방법
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Also Published As

Publication number Publication date
KR102103158B1 (ko) 2020-06-01
JP6383225B2 (ja) 2018-08-29
EP2846352A1 (en) 2015-03-11
TWI641159B (zh) 2018-11-11
JP2015056663A (ja) 2015-03-23
EP2846352B1 (en) 2020-12-09
US8951825B1 (en) 2015-02-10
KR20150029558A (ko) 2015-03-18
KR20150029552A (ko) 2015-03-18
TW201511322A (zh) 2015-03-16
CN104425636A (zh) 2015-03-18

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