CN104425457A - Testing structure and testing method for monitoring nitrogen doping quantity drifting of gate oxide layer - Google Patents
Testing structure and testing method for monitoring nitrogen doping quantity drifting of gate oxide layer Download PDFInfo
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- CN104425457A CN104425457A CN201310413057.XA CN201310413057A CN104425457A CN 104425457 A CN104425457 A CN 104425457A CN 201310413057 A CN201310413057 A CN 201310413057A CN 104425457 A CN104425457 A CN 104425457A
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Abstract
The application discloses a testing structure and a testing method for monitoring nitrogen doping quantity drifting of a gate oxide layer. The testing structure is positioned in a wafer cutting path and comprises an amplifier, a PMOS (P-channel Metal Oxide Semiconductor) pipe with a nitrogen doped gate oxide layer, an NMOS (N-channel metal oxide semiconductor) pipe with a nitrogen doped gate oxide layer, a first resistor and a second resistor. Current/voltage difference between the PMOS pipe and the NMOS pipe is amplified and the nitrogen doping quantity drifting of the gate oxide layer on an MOS (Metal Oxide Semiconductor) pipe can be monitored in real time.
Description
Technical field
The application relates to IC manufacturing field, particularly a kind of test structure and method monitoring the drift of gate oxide itrogen content of getter with nitrogen doped.
Background technology
At present, in the manufacturing process of semiconductor device, P-type mos (PMOS) pipe, NMOS tube or CMOS (Complementary Metal Oxide Semiconductor) (ComplementaryMetal-Oxide-Semiconductor, the CMOS) pipe be jointly made up of PMOS and NMOS tube become the basic device forming chip.
The manufacture method of metal-oxide-semiconductor in prior art, comprises the following steps:
Step 11, in the Semiconductor substrate 100 with trap 101, form gate oxide 102 and polysilicon gate 103 successively;
Particularly, trap injection is carried out to Semiconductor substrate 100, form trap 101; Grow gate oxide and deposition of polysilicon layer successively on a semiconductor substrate 100, subsequently in the surface of polysilicon layer coating photoresist layer (not shown), exposure imaging patterned photo glue-line, define the position of grid, take photoetching offset plate figure as mask, etches polycrystalline silicon layer and gate oxide successively, forms gate oxide 102 and polysilicon gate 103.
For PMOS transistor, trap is injected to N-type element boron fluoride (BF
2) or boron (B), if making is nmos pass transistor, trap is injected to P type element phosphor (P) or arsenic (As).
Step 12, the both sides of described polysilicon gate 103 formed side wall layer 104;
Step 13, be that mask carries out ion implantation to the Semiconductor substrate 100 with trap 101 with polysilicon gate 103 and side wall layer 104, form source-drain electrode 105;
Wherein, because PMOS hole is as majority carrier, so the source electrode of PMOS and drain electrode are P type; Because NMOS tube electronics is as majority carrier, so the source electrode of NMOS tube and drain electrode are N-type.
Step 14, the annealing in process of source-drain electrode 105 of carrying out.
According to foregoing description, Fig. 1 is the structural representation that prior art forms metal-oxide-semiconductor.
In order to control short-channel effect, smaller szie requirement on devices improves gate electrode electric capacity further.This can be realized by the thickness of continuous thinning gate oxide, but the thing followed is the lifting of gate electrode leakage current.Research finds, in gate oxide, nitrating forms silicon oxynitride, i.e. nitrating in silicon oxide layer, and compared with simple silicon oxide layer, its equivalent oxide thickness (EOT) is less, and this point can improve gate electrode electric capacity just.But, form silicon oxynitride, the bad control of the content of nitrogen in silicon oxynitride according to prior art nitrating in silica, and the content of nitrogen controls bad being easy to and causes semiconductor device cut-in voltage Vt to change, and the serious problems such as mobility change.
Prior art is the drift of monitoring nitrogen content, can only online (inline) monitor once, if nitrogen content exceedes permissible range weekly, illustrate that this batch of product falls short of specifications, but the method for this monitoring nitrogen content drift, can not reflect problem in time, production efficiency is lower.
Summary of the invention
This application discloses a kind of test structure and the method for monitoring the drift of gate oxide itrogen content of getter with nitrogen doped, to monitor the drift of gate oxide itrogen content of getter with nitrogen doped on metal-oxide-semiconductor in real time.
The technical scheme of the application is as follows:
This application discloses a kind of test structure monitoring the drift of gate oxide itrogen content of getter with nitrogen doped, described test structure is positioned at wafer Cutting Road, and described test structure comprises: amplifier, the PMOS with nitrating gate oxide, the NMOS tube with nitrating gate oxide, the first resistance and the second resistance;
Described amplifier, poor for the current/voltage amplified between PMOS and NMOS tube, there is first input end, the second input, the first output and the second output; Its first input end is connected the two ends of the first resistance respectively with the first output; Its second input and the second output are connected the two ends of the second resistance respectively; First input end is connected with the source electrode of PMOS; Second input is connected with the drain electrode of NMOS tube;
Described PMOS, for inputting the current/voltage of described PMOS at the first input end of amplifier, the drain electrode of described PMOS connects supply voltage;
Described NMOS tube, for inputting the current/voltage of described NMOS tube, the source ground of described NMOS tube at the second input of amplifier.
Disclosed herein as well is the method for a kind of test structure monitoring gate oxide itrogen content of getter with nitrogen doped described above drift, the method comprises:
The current/voltage of PMOS and NMOS tube is inputted respectively at the first input end of amplifier and the second input;
Through amplifier signal amplify after, the PMOS after being amplified and the current/voltage of NMOS tube poor;
Whether exceed permissible range according to the current/voltage difference after described amplification, judge whether gate oxide itrogen content of getter with nitrogen doped drifts about.
Along with the change of described gate oxide itrogen content of getter with nitrogen doped, the current/voltage between described PMOS and NMOS tube has contrary variation tendency.
When gate oxide itrogen content of getter with nitrogen doped raises, the electric current of PMOS reduces, and the electric current of NMOS tube raises;
When gate oxide itrogen content of getter with nitrogen doped reduces, the electric current of PMOS raises, and the electric current of NMOS tube reduces.
When gate oxide itrogen content of getter with nitrogen doped raises, the voltage of PMOS raises, and the voltage of NMOS tube reduces;
When gate oxide itrogen content of getter with nitrogen doped reduces, the voltage of PMOS reduces, and the voltage of NMOS tube raises.
By the technical scheme of the application, the current/voltage of the PMOS with nitrating gate oxide and the NMOS tube with nitrating gate oxide is after amplifier amplifies, whether exceed permissible range according to current/voltage difference between the two after amplifying, judge whether gate oxide itrogen content of getter with nitrogen doped drifts about.This is because, along with the change of gate oxide itrogen content of getter with nitrogen doped, current/voltage between PMOS and NMOS tube has contrary variation tendency, itrogen content of getter with nitrogen doped change greatly, current/voltage difference is larger, therefore the current/voltage after just can being amplified by monitoring between PMOS and NMOS tube is poor, and then whether monitoring gate oxide itrogen content of getter with nitrogen doped drifts about.With prior art, the method that whether on-line measurement gate oxide itrogen content of getter with nitrogen doped drifts about weekly is compared, and the solution of the present invention can reflect the drift of gate oxide itrogen content of getter with nitrogen doped real-time and accurately, controls the content of nitrogen in silicon oxynitride better.
Accompanying drawing explanation
Fig. 1 is the structural representation that prior art forms metal-oxide-semiconductor.
Fig. 2 is the test structure schematic diagram of embodiment of the present invention monitoring gate oxide itrogen content of getter with nitrogen doped drift.
Embodiment
For making object of the present invention, technical scheme and advantage clearly understand, to develop simultaneously embodiment referring to accompanying drawing, the present invention is described in more detail.
Fig. 2 is the test structure schematic diagram of embodiment of the present invention monitoring gate oxide itrogen content of getter with nitrogen doped drift.This test structure is positioned at wafer Cutting Road, and this test structure comprises: amplifier 201, the PMOS 202 with nitrating gate oxide, NMOS tube 203, first resistance 204 with nitrating gate oxide and the second resistance 205;
Wherein, amplifier 201, poor for the current/voltage amplified between PMOS 202 and NMOS tube 203, there is first input end, the second input, the first output and the second output; Its first input end and the first output are connected the two ends of the first resistance 204 respectively; Its second input and the second output are connected the two ends of the second resistance 205 respectively; First input end is connected with the source electrode of PMOS 202; Second input is connected with the drain electrode of NMOS tube 203;
Described PMOS 202, for inputting the current/voltage of described PMOS at the first input end of amplifier, the drain electrode of described PMOS meets supply voltage Vdd;
Described NMOS tube 203, for inputting the current/voltage of described NMOS tube, the source ground Vss of described NMOS tube at the second input of amplifier.
Research shows, along with the change of gate oxide itrogen content of getter with nitrogen doped, the current/voltage between described PMOS and NMOS tube has contrary variation tendency.Particularly, when gate oxide itrogen content of getter with nitrogen doped raises, the electric current of PMOS reduces, and the electric current of NMOS tube raises; When gate oxide itrogen content of getter with nitrogen doped reduces, the electric current of PMOS raises, and the electric current of NMOS tube reduces.When gate oxide itrogen content of getter with nitrogen doped raises, the voltage of PMOS raises, and the voltage of NMOS tube reduces; When gate oxide itrogen content of getter with nitrogen doped reduces, the voltage of PMOS reduces, and the voltage of NMOS tube raises.Therefore itrogen content of getter with nitrogen doped change greatly, and current/voltage difference is larger.So when gate oxide itrogen content of getter with nitrogen doped exceedes certain limit, the current/voltage between the PMOS of amplifying through amplifier and NMOS tube is poor, also certain limit is exceeded, therefore, can be poor by electrical measurement current/voltage, whether the drift of monitoring gate oxide itrogen content of getter with nitrogen doped in real time exceedes permissible range.
Test structure according to Fig. 2, the present invention monitors the method for gate oxide itrogen content of getter with nitrogen doped drift, comprises the following steps:
Step 21, input the current/voltage of PMOS and NMOS tube respectively at the first input end of amplifier and the second input;
Step 22, through amplifier signal amplify after, the PMOS after being amplified and the current/voltage of NMOS tube poor;
Step 23, whether exceed permissible range according to the current/voltage difference after described amplification, judge whether gate oxide itrogen content of getter with nitrogen doped drifts about.
Enumerate concrete scene below, method of the present invention is described in detail.In the embodiment of the present invention, the magnification ratio of amplifier is that the resistance of the 10, first resistance and the second resistance is respectively 1K ohm, supply voltage Vdd is 1.2 volts, and the grid external voltage of PMOS is 0 volt, the grid external voltage of NMOS tube, identical with supply voltage, be 1.2 volts.
PMOS and NMOS tube when the difference between current that amplifier amplifies is 600 milliamperes every micron (mA/um), the drift of gate oxide itrogen content of getter with nitrogen doped, i.e. Δ N=1.2 atom/cubic centimetre.
Show through research, under above-mentioned parameter condition, the difference between current that PMOS and NMOS tube are amplified through amplifier is greater than 200mA/um, the drift of gate oxide itrogen content of getter with nitrogen doped just exceedes permissible range, now, Δ N=0.5 atom/cubic centimetre, readjusts the itrogen content of getter with nitrogen doped of gate oxide with regard to needing, to return in permissible range.Because 600mA/um is greater than 200mA/um, illustrate that the drift of gate oxide itrogen content of getter with nitrogen doped exceedes permissible range.It should be noted that, different amplifiers, magnification ratio is different, and the magnitude of amplifying the difference between current obtained is also different, and this needs the amplifier according to different magnification ratio, arranges different difference between current permissible ranges.
In addition, output amplifier can be electric current, also can be voltage.So can directly by the difference between current that PMOS and NMOS tube are amplified through amplifier, or voltage difference, compare with permissible range.Also can equal the product of electric current and resistance according to voltage, calculate PMOS and the voltage of NMOS tube after amplifying respectively, and then calculate the voltage difference between PMOS and NMOS tube after amplifying.
In the above-described embodiments, the voltage difference between PMOS and NMOS tube after amplifying:
The resistance of electric current * second resistance that the resistance-NMOS tube of electric current * first resistance that PMOS is amplified through amplifier is amplified through amplifier.
To sum up, along with the change of gate oxide itrogen content of getter with nitrogen doped, the current/voltage between PMOS and NMOS tube has contrary variation tendency, and greatly, current/voltage difference is larger in itrogen content of getter with nitrogen doped change.The present invention utilizes this variation relation, and the current/voltage amplified between PMOS and NMOS tube by amplifier is poor, monitors the drift of gate oxide itrogen content of getter with nitrogen doped on metal-oxide-semiconductor in real time.Electric measurement method of the present invention, compared to prior art, can reflect the drift of gate oxide itrogen content of getter with nitrogen doped real-time and accurately, controls the content of nitrogen in silicon oxynitride better.
The foregoing is only the preferred embodiment of the application, not in order to limit the application, within all spirit in the application and principle, any amendment made, equivalent replacements, improvement etc., all should be included within scope that the application protects.
Claims (5)
1. monitor the test structure of gate oxide itrogen content of getter with nitrogen doped drift for one kind, described test structure is positioned at wafer Cutting Road, it is characterized in that, described test structure comprises: amplifier, the PMOS with nitrating gate oxide, the NMOS tube with nitrating gate oxide, the first resistance and the second resistance;
Described amplifier, poor for the current/voltage amplified between PMOS and NMOS tube, there is first input end, the second input, the first output and the second output; Its first input end is connected the two ends of the first resistance respectively with the first output; Its second input and the second output are connected the two ends of the second resistance respectively; First input end is connected with the source electrode of PMOS; Second input is connected with the drain electrode of NMOS tube;
Described PMOS, for inputting the current/voltage of described PMOS at the first input end of amplifier, the drain electrode of described PMOS connects supply voltage;
Described NMOS tube, for inputting the current/voltage of described NMOS tube, the source ground of described NMOS tube at the second input of amplifier.
2. a method for test structure monitoring gate oxide itrogen content of getter with nitrogen doped drift according to claim 1, the method comprises:
The current/voltage of PMOS and NMOS tube is inputted respectively at the first input end of amplifier and the second input;
Through amplifier signal amplify after, the PMOS after being amplified and the current/voltage of NMOS tube poor;
Whether exceed permissible range according to the current/voltage difference after described amplification, judge whether gate oxide itrogen content of getter with nitrogen doped drifts about.
3. method as claimed in claim 2, it is characterized in that, along with the change of described gate oxide itrogen content of getter with nitrogen doped, the current/voltage between described PMOS and NMOS tube has contrary variation tendency.
4. method as claimed in claim 3, is characterized in that, when gate oxide itrogen content of getter with nitrogen doped raises, the electric current of PMOS reduces, and the electric current of NMOS tube raises;
When gate oxide itrogen content of getter with nitrogen doped reduces, the electric current of PMOS raises, and the electric current of NMOS tube reduces.
5. method as claimed in claim 3, is characterized in that, when gate oxide itrogen content of getter with nitrogen doped raises, the voltage of PMOS raises, and the voltage of NMOS tube reduces;
When gate oxide itrogen content of getter with nitrogen doped reduces, the voltage of PMOS reduces, and the voltage of NMOS tube raises.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310413057.XA CN104425457B (en) | 2013-09-11 | 2013-09-11 | Testing structure and testing method for monitoring nitrogen doping quantity drifting of gate oxide layer |
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| CN201310413057.XA CN104425457B (en) | 2013-09-11 | 2013-09-11 | Testing structure and testing method for monitoring nitrogen doping quantity drifting of gate oxide layer |
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| CN104425457A true CN104425457A (en) | 2015-03-18 |
| CN104425457B CN104425457B (en) | 2017-05-10 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7675134B2 (en) * | 2008-04-07 | 2010-03-09 | Microchip Technology Incorporated | Temperature compensated work function based voltage reference |
| CN102024499A (en) * | 2009-09-18 | 2011-04-20 | 杭州士兰集成电路有限公司 | Readout structure and method for gate oxide breakdown type disposable programmable unit |
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- 2013-09-11 CN CN201310413057.XA patent/CN104425457B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7675134B2 (en) * | 2008-04-07 | 2010-03-09 | Microchip Technology Incorporated | Temperature compensated work function based voltage reference |
| CN102024499A (en) * | 2009-09-18 | 2011-04-20 | 杭州士兰集成电路有限公司 | Readout structure and method for gate oxide breakdown type disposable programmable unit |
Non-Patent Citations (1)
| Title |
|---|
| 忻尚芝: "《电工与电子技术教程》", 31 August 2012, 上海科学技术出版社 * |
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