CN104409371A - Method for improving long-term reliability of gold-aluminum bonding - Google Patents

Method for improving long-term reliability of gold-aluminum bonding Download PDF

Info

Publication number
CN104409371A
CN104409371A CN 201410725307 CN201410725307A CN104409371A CN 104409371 A CN104409371 A CN 104409371A CN 201410725307 CN201410725307 CN 201410725307 CN 201410725307 A CN201410725307 A CN 201410725307A CN 104409371 A CN104409371 A CN 104409371A
Authority
CN
China
Prior art keywords
aluminum
step
gold
wafer
layer
Prior art date
Application number
CN 201410725307
Other languages
Chinese (zh)
Inventor
杨兵
张国华
Original Assignee
无锡中微高科电子有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 无锡中微高科电子有限公司 filed Critical 无锡中微高科电子有限公司
Priority to CN 201410725307 priority Critical patent/CN104409371A/en
Publication of CN104409371A publication Critical patent/CN104409371A/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector

Abstract

The invention relates to a method for improving the long-term reliability of gold-aluminum bonding. The method is characterized in that by sputtering a blocking layer TiW and electroplating welding layered gold, a chip aluminum bonding pad structure is changed into a gold bonding pad structure (after the blocking layer TiW is sputtered, a gold-aluminum welding interface is prevented from being formed between an aluminum bonding pad and gold spheres, and a gold welded surface is formed by electroplating welding layered gold on the surface of the blocking layer TiW), and a gold-aluminum dissimilar metal bonding welding interface is changed into a gold-gold similar metal bonding welding interface. Therefore, the problem of long-term reliability caused by gold-aluminum dissimilar metal bonding, of an integrated circuit device, is thoroughly solved. The method is applicable to wafers of any size of 5 inches, 6 inches, 8 inches or 12 inches, and the wafers can comprise chips of aluminum-layer structures and any size.

Description

提升金铝键合长期可靠性的方法 Kim enhance long-term reliability of the aluminum bond method

技术领域 FIELD

[0001] 本发明涉及集成电路封装过程中在X芯片的铝焊盘上采用金丝球焊键合的金铝异种金属互连的长期可靠性问题,具体地说是如何将芯片上的铝焊盘结构转换成金焊盘结构,从而实现金金同种金属键合,提高集成电路器件的长期可靠性,属于微电子封装技术领域。 [0001] The present invention relates to integrated circuit packaging process used in long-term reliability problem of dissimilar metals of aluminum metal interconnect bonded gold ball bonding pads on the aluminum X chip, specifically on how aluminum welding chip conversion into gold disc structure pad structure, in order to achieve the same metal gold bonding term reliability of integrated circuit devices, microelectronics packaging technologies.

背景技术 Background technique

[0002] 现阶段,在集成电路的封装过程中,引线键合仍然是芯片焊盘与基板键合指之间互连的主要方式,互连焊点承载着芯片内部电路与外部电路的功率与信号的运输,其质量与可靠性对器件的功能和寿命起着决定性的作用。 [0002] At this stage, the packaging of integrated circuits, wire bonding is still the primary engagement means interconnected between the bond chip pads and the substrate, the interconnect pad carrying power chip internal circuit and the external circuit signal transport, quality and reliability plays a decisive role in the function and lifetime of the device. 目前集成电路的芯片焊盘通常采用铝层结构,基板键合指通常采用稳定性好抗氧化性能强的金镀层结构,芯片焊盘与外壳键合指之间的内引线互连则采用是业界广泛使用的金丝球焊键合工艺,通过热声球焊方式实现芯片焊盘铝金属化层与基板镀金键合指之间的互连。 The present integrated circuit chip pad structure usually an aluminum layer, the substrate generally use a strong bond finger good oxidation resistance stability gold layer structure, the lead interconnections between chip pads and bonded to the housing means is used industry gold ball bonding bond widely used bonding process, the die pad to interconnect the aluminum metallization layer and the substrate bond finger plated through thermoacoustic ball bonding method.

[0003] 在金丝球焊键合过程中,不可避免地出现了金丝与芯片铝层之间的金一招键合系统,金铝键合的长期可靠性问题主要表现在集成电路在工作或贮存过程中出现的金铝键合失效,表现为器件功能参数退化或功能失效。 [0003] In the bonded gold ball bonding process, gold inevitably move a gold wire bonding system between the aluminum layer and the chip, the long-term reliability of aluminum metal bonded mainly working in an integrated circuit occur during storage or gold aluminum bond failure, or degradation of performance parameters for the functional failure device functions. 由于金丝与芯片上的铝焊盘是异种金属,其晶格常数和热膨胀系数不同,金一招之间扩散速率存在着显著差异,经长期使用后,在一定温度下和一定时间范围内在金铝焊接界面处容易形成柯肯达尔也11)空洞和形成八11八1、八115八12、八114八1、如八12、八112八1等多种机械强度极差的金属间化合物,且随着温度和时间的增加,空洞和金属间化合物的形成将会加速,伴随金属间化合物的产生,键合接触电阻变大,降低接触区域的电学性能,导致器件参数漂移,甚至开路而失效,影响产品的长期可靠性。 Since aluminum pads on the chip and gold wire are dissimilar metal different from a lattice constant and coefficient of thermal expansion, there are significant differences between the rate of diffusion of gold a move, after long-term use, at a certain temperature and a certain timeframe in gold aluminum weld interface can be easily formed Kirkendall 11) and a cavity 11 formed eight eight 1, 115 8:12 eight, eight eight 1 114, 8:12, 112 between eight eight poor mechanical strength, a variety of metal compounds such as, with the increase of temperature and time, and a metal cavity is formed between the compound will be accelerated, accompanied by the intermetallic compound, bonding the contact resistance increases, reducing the electrical performance of the contact area, resulting in the device parameter drift, even open circuit failure long-term reliability of the affected product.

发明内容 SUMMARY

[0004] 本发明的目的在于克服现有技术中存在的不足,提供一种提升金铝键合长期可靠性的方法,其通过溅射阻挡层III合金和电镀焊接层金的方式将芯片铝焊盘结构改变成金焊盘结构,将金铝异种金属键合焊接界面改变成金金同种金属键合焊接界面,彻底解决金铝异种金属键合导致的集成电路器件的长期可靠性问题。 [0004] The object of the present invention is to overcome the disadvantages of the prior art, there is provided a method to enhance the long-term reliability of gold bonded aluminum, which alloy by sputtering and electroplating solder barrier layer III gold layer aluminum welding manner chip structural changes to the disc pad structure gold, aluminum, gold bonding dissimilar metal weld interface is changed to gold isotype weld interface metal bonding, solve the problem of long-term reliability of the integrated circuit device aluminum metal caused by dissimilar metal bonding. 本发明采用的技术方案是: Aspect of the present invention is that:

一种提升金铝键合长期可靠性的方法,包括下述步骤: A method for bonding an aluminum metal to enhance long-term reliability, comprising the steps of:

步骤一,含有铝层焊盘结构的圆片来料接收;所述圆片上含有芯片;芯片表面具有铝焊盘; A step, the wafer containing an aluminum layer pad structure receiving incoming; wafer containing said chip; chip surface having aluminum pads;

步骤二,根据来料圆片中芯片表面的铝焊盘的位置坐标定制专用光刻掩膜板;光刻掩膜板的作用是在芯片铝焊盘的位置区域紫外光可透过,在芯片的非焊盘区域紫外光被阻挡; Step two, customized special photolithographic mask according to the position coordinates of the aluminum pads in the chip surface of the incoming wafer; role photolithographic mask is UV-permeable region at a position aluminum die pads, chip the ultraviolet light is blocked non-pad region;

步骤三,对含有铝焊盘结构的圆片进行清洗,去除圆片表面杂质; Step three, the wafer is an aluminum-containing cleaning pad structure, the wafer surface is removed impurities;

步骤四,采用光刻和电镀的方法将铝焊盘结构的圆片修改成金焊盘结构的圆片。 Step four, using photolithography and electroplating method of an aluminum pad structure the wafer into the wafer modified gold pad structure.

[0005] 进一步地,所述步骤三具体包括: [0005] Further, the three step comprises:

步骤3-1,对含有铝焊盘结构的圆片进行清洗,以去除圆片表面的杂质; Step 3-1, containing aluminum on the wafer cleaning pad structure, the surface of the wafer to remove impurities;

步骤3-2,经过清洁处理后的圆片进行脱水烘干处理,使其达到清洁干燥。 Step 3-2, after the wafer cleaning process after dehydration drying process to reach the clean and dry.

[0006] 进一步地,所述步骤四具体包括: [0006] Further, the four step comprises:

步骤4-1,在铝焊盘结构圆片的整个表面溅射阻挡层;阻挡层的材料为III合金; Step 4-1, the entire surface of the barrier layer sputtered aluminum pad structure wafer; III material barrier layer is an alloy;

步骤4-2,在铝焊盘结构圆片的整个表面再溅射一层焊接层;焊接层的材料为金属八I! Step 4-2, the entire wafer surface of an aluminum pad structure and then sputtering a layer of solder; solder material layer is a metal eight the I! ; 步骤4-3,在铝焊盘结构圆片表面涂上光刻胶体,并烘烤固化; ; Step 4-3, a resist coated wafer body surface of the aluminum pad structure, and curing by baking;

步骤4-4,采用专用光刻掩膜板,通过光刻设备将专用光刻掩膜板上的焊盘图形对准圆片上的铝层上的焊盘; Step 4-4, using a dedicated mask lithography, the lithographic apparatus via lithographic masks dedicated board pad patterns are aligned on the aluminum layer on the wafer pads;

步骤4-5,进行紫外线曝光;采用显影液去除已曝光部分的光刻胶; Step 4-5, exposed to ultraviolet rays; removing the photoresist using a developer of the exposed portion;

步骤4-6,将圆片进行烘焙,以去除显影后光刻胶内残留溶剂; Step 4-6, the wafer is baked to remove residual solvent in resist after development;

步骤4-7,通过电镀的方式,在露出的焊接层表面电镀上一层焊接层金; Step 4-7, by way of plating, the solder layer a layer of gold plating on the surface of the solder layer is exposed;

步骤4-8,去除圆片表面的光刻胶; Step 4-8, removing the resist surface of the wafer;

步骤4-9,去除光刻胶完毕后,采用刻蚀工艺刻蚀掉对焊接层金以外的阻挡层的III和焊接层的八11 ; Step 4-9, after removing the photoresist is completed, using the etching process for etching barrier layer 11 away eight other than gold solder layer and the solder layer III;

步骤4-10,最后对圆片进行漂洗和干燥。 Step 4-10, and finally the wafer is rinsed and dried.

[0007] 更进一步地, [0007] Still further,

步骤4-1中,阻挡层的厚度为3000〜5000人。 In step 4-1, the barrier layer has a thickness of 3000~5000 people.

[0008] 步骤4-2中,焊接层的厚度为1000〜2000人。 In [0008] Step 4-2, for the thickness of the solder layer 1000~2000 people.

[0009] 步骤4-3中,圆片放置在烘箱中采用1201,30111111条件进行烘烤固化。 In [0009] Step 4-3, a wafer placed in an oven for baking and curing conditions employed 1201,30111111.

[0010] 步骤4-7中,焊接层金13的厚度为20000〜30000人。 In [0010] Step 4-7, the gold thickness of the solder layer 13 is 20000~30000 people.

[0011] 本发明的优点在于:目前针对铝焊盘的金铝键合长期可靠性问题未见到有效解决措施,而本发明通过溅射阻挡层III合金阻挡了铝焊盘与金球之间形成金铝焊接界面,通过在阻挡层III的表面电镀焊接层金的方式形成金焊接表面,在后续金丝球焊键合时形成金金同种金属键合,彻底解决了铝焊盘与金球键合形成的金铝键合的长期可靠性问题。 [0011] The advantage of the present invention is that: the current for a long-term reliability of aluminum metal aluminum bond pads effective remedial measures have not seen, but the present invention is by sputtering the barrier layer III alloying barrier between the gold ball and the aluminum pad gold aluminum weld interface is formed by forming a gold plating weld surface in a manner the surface layer of gold solder barrier layer III, and timely with gold to form a gold metal bonded gold ball bonding in a subsequent key, solve the aluminum pad and the gold long-term reliability of gold ball bonding aluminum bond formation.

附图说明 BRIEF DESCRIPTION

[0012] 图1为本发明的第一种实施例的结构示意图。 Schematic structural diagram of a first embodiment of the [0012] present invention. FIG.

[0013] 图2为图1金焊盘圆片中的一个芯片的放大图。 [0013] FIG. 2 is an enlarged view of a chip wafer of FIG. 1 in the gold pad.

[0014] 图3为是图1金焊盘圆片中的一个芯片的左视图。 [0014] FIG. 3 is a left side view of a chip of FIG. 1 in the wafer gold pad.

[0015] 图4为图2芯片中的一个金焊盘结构截面示意图。 [0015] FIG 4 is a configuration diagram of a gold pad 2 a schematic sectional view of the chip.

[0016] 图5为实施例中铝焊盘结构圆片示意图。 [0016] Example 5 is a schematic view of an aluminum embodiment of pad structure the wafer.

[0017] 图63为实施例中圆片上的含铝焊盘结构的单个芯片示意图。 [0017] FIG. 63 is a schematic diagram of a single chip embodiment the aluminum pads on the wafer structure in the embodiment.

[0018] 图66为图6¾的左视图。 [0018] FIG. 66 is a left side view of FIG 6¾.

[0019] 图7为实施例中铝焊盘结构截面示意图。 [0019] Example 7 is a schematic sectional view aluminum pad structure embodiment.

[0020] 图83为实施例中专用光刻掩膜板示意图。 [0020] FIG. 83 is a schematic view of a lithography mask in the specific embodiment.

[0021] 图86为图8¾的左视图。 [0021] FIG. 86 is a left side view of FIG 8¾.

[0022] 图9为实施例中铝焊盘结构圆片整个表面溅射阻挡层示意图。 [0022] Example 9 is the entire surface of the aluminum pad structure schematic wafer sputtering the barrier layer.

[0023] 图10为实施例中铝焊盘结构圆片整个表面溅射焊接层示意图。 [0023] FIG. 10 is a structural example aluminum pad entire surface of the wafer sputtering solder layer embodiment FIG.

[0024] 图11为实施例中铝焊盘结构圆片表面涂光刻胶体示意图。 [0024] FIG. 11 is a schematic view of embodiment thereof photoresist coated aluminum surface of the wafer pad structure embodiment.

[0025] 图12为实施例中紫外线曝光示意图。 [0025] FIG. 12 is a schematic view of ultraviolet exposure Examples.

[0026] 图13为实施例中采用显影液去除已曝光部分的光刻胶示意图。 [0026] FIG. 13 is a schematic view of an embodiment using a photoresist removing the exposed portion of the developing solution.

[0027] 图14为实施例中露出的焊接层表面电镀一层焊接层金示意图。 [0027] FIG. 14 is a schematic view of one welding metal layers in the exposed surface of the layer of solder plating embodiment.

[0028] 图15为实施例中去除圆片表面的光刻胶示意图。 [0028] FIG. 15 is a schematic diagram of the removal of the resist surface of the wafer of FIG.

[0029] 图16为实施例中刻蚀掉对焊接层金以外的阻挡层的III和焊接层的如示意图。 [0029] FIG. 16 is for Example III and etching the barrier layers other than the solder layer of the solder layer as gold away schematic embodiment.

[0030] 图17为本发明的流程图。 [0030] FIG 17 is a flowchart of the present invention.

具体实施方式 Detailed ways

[0031] 下面结合具体附图和实施例对本发明作进一步说明。 [0031] The following specific embodiments in conjunction with the drawings and embodiments of the present invention will be further described.

[0032] 本发明所提出的提升金铝键合长期可靠性的方法,如图5〜16所示,该方法包括以下步骤: [0032] A method for bonding an aluminum metal to enhance long-term reliability of the proposed invention, the method comprising the steps of FIG. 5~16:

步骤一,接收铝层焊盘结构的圆片1,见图5所示。 A step of receiving an aluminum layer wafer pad structure, as shown in Figure 5. 该圆片可以是5〃、6〃、8〃或12〃的任意一类,圆片中包含多颗任意尺寸的芯片2,见图如和图他所示。 The wafer may be 5〃, either type 6〃, or 12〃 of 8〃, 2, and He as shown in Figure wafer contains multiple pieces of any size chip. 芯片表面包含有多个铝焊盘3,这些铝焊盘3的结构包括二氧化硅层4、铝层5、隔离介质层6、钝化层7,其截面示意图见图7所示(当在铝层5的表面键合金球时就会形成金铝异种金属键合焊接界面,影响集成电路器件的长期可靠性)。 Aluminum surface comprising a plurality of chip pads 3, the structure of the aluminum pads 3 include silica layer 4, an aluminum layer 5, dielectric spacer layer 6, a passivation layer 7, which is a cross-sectional schematic diagram in Figure 7. (when will form a gold bond the dissimilar metal aluminum layer on the surface of aluminum alloy pellet 5 key engagement weld interface, the influence of the long-term reliability of the integrated circuit device).

[0033] 步骤二,根据芯片上铝焊盘的位置坐标定制专用光刻掩膜板8,其结构示意图见图83和图油所示。 [0033] Step two, the position coordinates of the aluminum pads on the chip dedicated custom photolithographic masking plate 8, a schematic view of the structure shown in Figure 83 and an oil. 光刻掩膜板的作用是在芯片铝焊盘的位置区域(对应于图&!和油中空白处)紫外光可透过,在芯片的非焊盘区域(对应于图&!和813中非空白处)紫外光被阻挡,不可透过。 Acting lithographic mask area of ​​the chip is the position at the aluminum pads (corresponding to &! Oil and blank) UV-permeable, in the non-pad area of ​​the chip (corresponding to &! And 813 non-blank) ultraviolet light is blocked impermeable.

[0034] 步骤三,对含有铝焊盘结构的圆片进行清洗,去除圆片表面杂质;具体包括: [0034] Step III containing aluminum on the wafer cleaning pad structure, the wafer surface is removed impurities; comprises:

步骤3-1,当掩膜版8制作完毕后,对含有铝焊盘结构的圆片1进行清洗,以去除圆片表面可能吸附的一些颗粒状的表面污染物、有机物、可动粒子等杂质。 Step 3-1, when the mask 8 are made, the wafer is a structure containing aluminum pad was washed to remove impurities some of the particulate contamination of wafer surfaces may be surface adsorption, organic matter, the movable particles .

[0035] 步骤3-2,经过清洁处理后的晶圆表面可能会含有一定的水分,所以必须放置在烘箱中采用1201,30-:1的条件进行脱水烘干处理,以便增加光刻胶和铝焊盘圆片表面的黏附能力。 [0035] In step 3-2, after the wafer surface after the cleaning process may contain some water, it must be placed in an oven 1201,30- employed: condition 1 is subjected to dehydration drying process, and the photoresist in order to increase adhesion ability of the wafer surface of the aluminum pad.

[0036] 步骤四,采用光刻和电镀的方法将铝焊盘结构的圆片修改成金焊盘结构的圆片。 [0036] Step 4 using photolithography and electroplating methods wafer structure modified aluminum pad wafer gold pad structure. 具体如下所述: As described below:

步骤4-1,在铝焊盘结构圆片的整个表面溅射阻挡层9 ; Step 4-1, the entire wafer surface of the pad structure of the aluminum barrier layer 9 sputtered;

此步骤中,采用溅射设备,在铝焊盘结构圆片的整个表面溅射阻挡层9 ;阻挡层9的材料为III合金,厚度约3000〜5000^它与铝焊盘表面有良好的粘附作用,同时又能阻挡铝焊盘表面与焊接层金属如形成金铝焊接界面。 In this step, sputtering equipment, the sputtering on the entire surface of the wafer a barrier layer of an aluminum pad structure 9; barrier material layer 9 III alloy, which has a thickness of about 3000~5000 ^ good adhesion to the surface of the aluminum pad attachment effect, while the barrier layer of aluminum pad surface and the solder metal such as aluminum, a gold weld interface. 其焊盘截面结构示意图见图9所示。 A pad which is shown in Figure 9 shows a cross-sectional configuration.

[0037] 步骤4-2,在铝焊盘结构圆片的整个表面再溅射一层焊接层10 ; [0037] Step 4-2, the entire wafer surface of an aluminum pad structure and then sputtering a layer of solder 10;

当!'II合金阻挡层9溅射完毕后,采用溅射设备,在铝焊盘结构圆片的整个表面再溅射一层焊接层10,焊接层10的材料为金属八山其厚度约1000〜2000^,其焊盘截面结构示意图见图10所示。 When! 'II alloy sputtering the barrier layer 9 is completed, using the sputtering apparatus, the entire wafer surface of an aluminum pad structure and then sputtering a layer of solder 10, the material 10 is a metal solder layer having a thickness of approximately 1000 eight hill ~2000 ^, which pads sectional structure is shown in Figure 10.

[0038] 步骤4-3,在铝焊盘结构圆片表面涂上光刻胶体11,并烘烤固化; [0038] Step 4-3, the aluminum pads in the surface of the wafer coated with photoresist structure 11, and curing by baking;

当焊接层10溅射完毕后,采用匀胶设备在铝焊盘结构圆片的整个表面涂上光刻胶体11,铝焊盘圆片匀胶示意图见图11所示。 After the completion of sputtering the solder layer 10 using spin coating device 11, the aluminum pads wafer is shown in Figure 11 the spin coating of photoresist material coated on the entire surface of the aluminum disc pad structure. 然后进行加温条件下的烘烤固化,使光刻胶中的溶剂挥发,胶膜干燥。 And then baking and curing under heating conditions to volatilize the solvent in the photoresist, the film was dried. 具体根据所涂光刻胶的特性,将圆片放置在烘箱中采用1201,30-:1条件进行烘烤固化,使光刻胶中的溶剂挥发,胶膜干燥。 The photoresist coated according to the specific characteristics of the wafer placed in an oven using 1201,30-: 1 baking and curing conditions, the photoresist solvent is volatilized and dried film.

[0039] 步骤4-4,采用专用光刻掩膜板8,通过光刻设备将专用光刻掩膜板8上的焊盘图形对准圆片上的铝层5上的焊盘; [0039] Step 4-4, dedicated photolithographic masking plate 8, by the lithographic apparatus dedicated land pattern 8 on the photolithographic mask on the aluminum layer 5 are aligned on the wafer pads;

步骤4-5,通过紫外线12曝光,铝层5上的焊盘所在区域紫外光全部透过,非铝层上的焊盘所在区域紫外光不能透过,曝光示意图见图12所示。 Step 4-5, 12 by ultraviolet exposure, UV Area pad on the aluminum layer 5 all through, UV Area pad on the non-impermeable aluminum layer, exposure is shown in Figure 12.

[0040] 当曝光完毕后,采用显影液去除已曝光部分的光刻胶,曝光部分的光刻胶与显影液作用并溶解于水,未曝光部分不与显影液作用并保持原状。 [0040] When exposure is completed, the photoresist is removed using a developing solution of the exposed portions of the photoresist exposed to the action of a developing solution and dissolved in a portion of water, partially with the effect of the developing solution and unexposed intact. 见图13所示。 As shown in Figure 13.

[0041] 步骤4-6,将圆片放置在烘箱中进行1201,30-:1的烘焙,以去除显影后光刻胶内残留溶剂,提闻光刻I父对娃片表面的粘附性。 [0041] Step 4-6, the discs were placed in an oven for 1201,30-: 1 baked to remove the photoresist residue after the developing solvent, to provide the parent I smell lithographic substrate surface adhesion baby .

[0042] 步骤4-7,通过电镀的方式,在露出的焊接层10表面电镀上一层焊接层金13,其厚度约20000〜300001用于后续的金丝球焊,与金球形成金金焊接界面,彻底解决金铝异种金属键合导致的集成电路器件的长期可靠性问题。 [0042] Step 4-7, by way of electroplating, 10 on the exposed surface plating layer of solder of the solder layer 13 of gold having a thickness of about 20000~300001 for subsequent gold ball bonding, the gold ball is formed Gold weld interface, completely solve the problem of long-term reliability of the integrated circuit device aluminum metal caused by dissimilar metal bonding. 焊盘截面结构示意图见图14所示。 Schematic cross-sectional structure of the pad shown in Figure 14.

[0043] 步骤4-8,当电镀焊接层金13完毕后,采用等离子打胶机或与光刻胶配套的剥离液去除圆片表面的光刻胶,其焊盘截面结构示意图见图15所示。 [0043] Step 4-8, when the gold plating of the solder layer 13 is completed, by plasma or gluing machine supporting the photoresist stripping liquid removing the resist surface of the wafer, the cross-sectional structure of a pad is shown in Figure 15 shows.

[0044] 步骤4-9,去除光刻胶完毕后,采用刻蚀工艺刻蚀掉对焊接层金13以外的阻挡层9的! [0044] Step 4-9, after removing the photoresist is completed, the etch process employed to etch away the barrier layer 9 other than the solder layer of gold 13! 'II和焊接层10的八I! 'II I 10 and the eight layers of solder! ,其焊盘截面结构示意图见图16所示。 , Which is a schematic cross-sectional structure of the pad shown in Figure 16.

[0045] 步骤4-10,当刻蚀完毕后,对圆片进行漂洗和干燥,完毕后铝焊盘结构圆片转换成金焊盘结构圆片步骤全部完成。 [0045] Step 4-10, when etching is completed, the wafer is rinsed and dried, after complete conversion of aluminum metal pad structure wafer to wafer step completed pad structure.

[0046] 后续可以将金焊盘结构圆片进行分割成小芯片,在焊接层金13表面采用金丝球焊键合形成金金同种金属键合界面,彻底解决了金铝异种金属键合导致的集成电路器件的长期可靠性问题。 [0046] The subsequent gold pad structure may be divided into a small chip wafer, using gold ball bonding surface of the welded bond layer 13 to form gold gold gold bonding interface of the same metal, aluminum, gold solve the dissimilar metal bonding long-term reliability problems caused by the integrated circuit device.

[0047] 本发明通过采用溅射阻挡层III合金和电镀焊接层金的方式将芯片铝焊盘结构改变成金焊盘结构(溅射阻挡层III阻挡了铝焊盘与金球之间形成金铝焊接界面,在阻挡层!'II的表面电镀焊接层金形成金焊接表面),将金铝异种金属键合焊接界面改变成金金同种金属键合焊接界面,彻底解决了金铝异种金属键合导致的集成电路器件的长期可靠性问题。 [0047] The present invention adopts III gold alloy layer and the plated solder barrier layer sputtered way the chip pad structure changed to an aluminum metal pad structure (III sputtered barrier layer between the aluminum blocks aluminum pad is formed of gold and the gold ball weld interface, the barrier layer! 'II surface plated solder layer of gold to form a gold weld surface), gold aluminum dissimilar metal bonding weld interface is changed to gold isotype metal bonded weld interface, solve gold aluminum dissimilar metal bonding long-term reliability problems caused by the integrated circuit device.

Claims (7)

1.一种提升金铝键合长期可靠性的方法,其特征在于,包括下述步骤: 步骤一,含有铝层焊盘结构的圆片(I)来料接收;所述圆片(I)上含有芯片(2);芯片(2)表面具有铝焊盘(3); 步骤二,根据来料圆片中芯片表面的铝焊盘的位置坐标定制专用光刻掩膜板(8);光刻掩膜板(8)的作用是在芯片铝焊盘的位置区域紫外光可透过,在芯片的非焊盘区域紫外光被阻挡; 步骤三,对含有铝焊盘结构的圆片进行清洗,去除圆片表面杂质; 步骤四,采用光刻和电镀的方法将铝焊盘结构的圆片修改成金焊盘结构的圆片。 1. A method to enhance the long-term reliability of the bonding of aluminum metal, which is characterized in that it comprises the following steps: Step 1, the wafer comprising (I) an aluminum layer pad structure receiving incoming; said wafer (I) containing the chip (2); chip (2) having a surface aluminum pad (3); two step, photolithographic masks dedicated custom plate (8) based on the position coordinates of the aluminum pads in the chip surface of the incoming wafer; light effect engraved mask (8) is permeable to ultraviolet region at a position aluminum die pad, the pad is blocked in the non-ultraviolet region of the chip; step three, the wafer is an aluminum-containing cleaning pad structure removing impurities wafer surface; step 4 using photolithography and electroplating methods wafer structure modified aluminum pad wafer gold pad structure.
2.如权利要求1所述的提升金铝键合长期可靠性的方法,其特征在于,所述步骤三具体包括: 步骤3-1,对含有铝焊盘结构的圆片(I)进行清洗,以去除圆片表面的杂质; 步骤3-2,经过清洁处理后的圆片进行脱水烘干处理,使其达到清洁干燥。 2. A method to enhance the long-term reliability of the bonding of the aluminum bond gold claim 1, wherein said three step comprises: a step 3-1, the wafer is (I) an aluminum-containing cleaning pad structure , the surface of the wafer to remove impurities; step 3-2, after the wafer cleaning process after dehydration drying process to reach the clean and dry.
3.如权利要求1所述的提升金铝键合长期可靠性的方法,其特征在于,所述步骤四具体包括: 步骤4-1,在铝焊盘结构圆片的整个表面溅射阻挡层(9);阻挡层(9)的材料为TiW合金; 步骤4-2,在铝焊盘结构圆片的整个表面再溅射一层焊接层(10);焊接层(10)的材料为金属Au ; 步骤4-3,在铝焊盘结构圆片表面涂上光刻胶体(11),并烘烤固化; 步骤4-4,采用专用光刻掩膜板(8),通过光刻设备将专用光刻掩膜板(8)上的焊盘图形对准圆片上的铝层(5)上的焊盘; 步骤4-5,进行紫外线曝光;采用显影液去除已曝光部分的光刻胶; 步骤4-6,将圆片进行烘焙,以去除显影后光刻胶内残留溶剂; 步骤4-7,通过电镀的方式,在露出的焊接层(10)表面电镀上一层焊接层金(13); 步骤4-8,去除圆片表面的光刻胶; 步骤4-9,去除光刻胶完毕后,采用刻蚀工艺刻蚀掉对焊接层金(13)以外的阻挡 3. The method of claim 1 to enhance the long-term reliability gold aluminum bond claim, wherein four said step comprises: a step 4-1, the entire surface of the barrier layer of sputtered aluminum on the wafer pad structure (9); material of the barrier layer (9) of TiW alloy; step 4-2, the entire wafer surface of an aluminum pad structure and then sputtering a solder layer (10); solder material layer (10) is a metal au; step 4-3, the aluminum coated surface of the wafer a photoresist pad structure (11), cured and baked; step 4-4, using a dedicated photolithography mask (8), by the lithographic apparatus dedicated light land pattern engraved on the mask plate (8) aligned on a wafer in an aluminum layer (5) on the pads; step 4-5, exposed to ultraviolet rays; removing the photoresist using a developer of the exposed portion; step 4 -6, the wafer is baked to remove residual solvent after the photoresist development; step 4-7, by way of plating, the solder layer (10) on the surface of a layer of gold plated solder layer (13) is exposed; step 4-8, removing the resist surface of the wafer; step 4-9, after the removal of the photoresist is completed, the etch process employed to etch away the barrier layer other than the weld metal (13) (9)的TiW和焊接层(10)的Au; 步骤4-10,最后对圆片进行漂洗和干燥。 Au (9) of TiW and a solder layer (10); a step 4-10, the wafer is rinsed and finally dried.
4.如权利要求3所述的提升金铝键合长期可靠性的方法,其特征在于: 步骤4-1中,阻挡层(9)的厚度为3000〜5000A。 4. A method to enhance the long-term reliability of the bonding of the aluminum bond gold claim 3, wherein: the step 4-1, the barrier layer (9) has a thickness 3000~5000A.
5.如权利要求3所述的提升金铝键合长期可靠性的方法,其特征在于: 步骤4-2中,焊接层(10)的厚度为1000〜2000A。 5. A method to enhance the long-term reliability of the bonding of the aluminum bond gold claim 3, wherein: the step 4-2, the thickness of the solder layer (10) is 1000~2000A.
6.如权利要求3所述的提升金铝键合长期可靠性的方法,其特征在于: 步骤4-3中,圆片放置在烘箱中采用120°C,30min条件进行烘烤固化。 6. A method to enhance the long-term reliability of the bonding of the aluminum bond gold claim 3, wherein: in step 4-3, using the discs were placed in an oven at 120 ° C, 30min bake curing conditions.
7.如权利要求3所述的提升金铝键合长期可靠性的方法,其特征在于: 步骤4-7中,焊接层金(13)的厚度为20000〜30000A。 7. The method of claim 3 bonded to an aluminum metal lifting long-term reliability of the preceding claims, characterized in that: in the step 4-7, the gold thickness of the solder layer (13) is 20000~30000A.
CN 201410725307 2014-12-03 2014-12-03 Method for improving long-term reliability of gold-aluminum bonding CN104409371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201410725307 CN104409371A (en) 2014-12-03 2014-12-03 Method for improving long-term reliability of gold-aluminum bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201410725307 CN104409371A (en) 2014-12-03 2014-12-03 Method for improving long-term reliability of gold-aluminum bonding

Publications (1)

Publication Number Publication Date
CN104409371A true CN104409371A (en) 2015-03-11

Family

ID=52646987

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201410725307 CN104409371A (en) 2014-12-03 2014-12-03 Method for improving long-term reliability of gold-aluminum bonding

Country Status (1)

Country Link
CN (1) CN104409371A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585461A (en) * 1968-02-19 1971-06-15 Westinghouse Electric Corp High reliability semiconductive devices and integrated circuits
US20040070086A1 (en) * 2002-10-15 2004-04-15 Marvell Semiconductor, Inc. Fabrication of wire bond pads over underlying active devices, passive devices and /or dielectric layers in integrated circuits
CN1866467A (en) * 2005-05-18 2006-11-22 米辑电子股份有限公司 Circuitry component fabricating method
CN1897268A (en) * 2005-07-13 2007-01-17 精工爱普生株式会社 Semiconductor device
US20080012132A1 (en) * 2004-07-14 2008-01-17 Megica Corporation Chip structure with redistribution traces
CN101449376A (en) * 2006-05-23 2009-06-03 飞思卡尔半导体公司 Contact surrounded by passivation and polymide and method therefor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585461A (en) * 1968-02-19 1971-06-15 Westinghouse Electric Corp High reliability semiconductive devices and integrated circuits
US20040070086A1 (en) * 2002-10-15 2004-04-15 Marvell Semiconductor, Inc. Fabrication of wire bond pads over underlying active devices, passive devices and /or dielectric layers in integrated circuits
US20080012132A1 (en) * 2004-07-14 2008-01-17 Megica Corporation Chip structure with redistribution traces
CN1866467A (en) * 2005-05-18 2006-11-22 米辑电子股份有限公司 Circuitry component fabricating method
CN1897268A (en) * 2005-07-13 2007-01-17 精工爱普生株式会社 Semiconductor device
CN101449376A (en) * 2006-05-23 2009-06-03 飞思卡尔半导体公司 Contact surrounded by passivation and polymide and method therefor

Similar Documents

Publication Publication Date Title
US6861345B2 (en) Method of disposing conductive bumps onto a semiconductor device
CN1209795C (en) Method for encapsulation in chip level by use of electroplating mask of elastic body
JP3588027B2 (en) Method of joining Ic chip to a substrate
CN100481424C (en) Semiconductor device and method for manufacturing the same
US6756294B1 (en) Method for improving bump reliability for flip chip devices
US7043830B2 (en) Method of forming conductive bumps
JP3554685B2 (en) Method of joining Ic chip to the support substrate
KR20120123303A (en) Semiconductor chip device with solder diffusion protection
US20060076677A1 (en) Resist sidewall spacer for C4 BLM undercut control
TW531873B (en) Barrier cap for under bump metal
US5198385A (en) Photolithographic formation of die-to-package airbridge in a semiconductor device
US8368214B2 (en) Alpha shielding techniques and configurations
US10008459B2 (en) Structures having a tapering curved profile and methods of making same
US6462415B1 (en) Semiconductor device as an object of thickness reduction
JP2004048012A (en) Fin pitch and high aspect ratio wiring structure and interconnection method for the same
US8361899B2 (en) Microelectronic flip chip packages with solder wetting pads and associated methods of manufacturing
CN100468644C (en) Protective layer during scribing
TW200705632A (en) Method for forming high reliability bump structure
US20120038043A1 (en) Manufacturing fan-out wafer level packaging
CN100551207C (en) Method for removing resin mask layer and method for manufacturing solder bumped substrate
JPH0778826A (en) Manufacture of chip bump
CN100428414C (en) Method for forming low-stress multi-layer metallized structure and leadless solder end electrode
JP2003203940A (en) Semiconductor chip and wiring base board and manufacturing method of them, semiconductor wafer, semiconductor device, circuit base board and electronic instrument
CN103515362A (en) Package on package device and method of packaging semiconductor die
CN100590859C (en) Projection structure with ring-shaped support and manufacturing method thereof

Legal Events

Date Code Title Description
C06 Publication
C10 Entry into substantive examination
RJ01