CN104409371A - Method for improving long-term reliability of gold-aluminum bonding - Google Patents
Method for improving long-term reliability of gold-aluminum bonding Download PDFInfo
- Publication number
- CN104409371A CN104409371A CN201410725307.8A CN201410725307A CN104409371A CN 104409371 A CN104409371 A CN 104409371A CN 201410725307 A CN201410725307 A CN 201410725307A CN 104409371 A CN104409371 A CN 104409371A
- Authority
- CN
- China
- Prior art keywords
- gold
- disk
- aluminum
- term reliability
- pad structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Abstract
The invention relates to a method for improving the long-term reliability of gold-aluminum bonding. The method is characterized in that by sputtering a blocking layer TiW and electroplating welding layered gold, a chip aluminum bonding pad structure is changed into a gold bonding pad structure (after the blocking layer TiW is sputtered, a gold-aluminum welding interface is prevented from being formed between an aluminum bonding pad and gold spheres, and a gold welded surface is formed by electroplating welding layered gold on the surface of the blocking layer TiW), and a gold-aluminum dissimilar metal bonding welding interface is changed into a gold-gold similar metal bonding welding interface. Therefore, the problem of long-term reliability caused by gold-aluminum dissimilar metal bonding, of an integrated circuit device, is thoroughly solved. The method is applicable to wafers of any size of 5 inches, 6 inches, 8 inches or 12 inches, and the wafers can comprise chips of aluminum-layer structures and any size.
Description
Technical field
The present invention relates in integrated antenna package process the long-term reliability problems of the golden aluminum dissimilar metal interconnection adopting gold ball bonding bonding on the aluminum pad of IC chip, specifically how the aluminum pad cooperating measure on chip is become golden pad structure, thus realize golden same metal bonding, improve the long-term reliability of integrated circuit (IC)-components, belong to microelectronic packaging technology field.
Background technology
Present stage, in the encapsulation process of integrated circuit, wire bonding remain chip bonding pad and substrate bonding refer between the major way that interconnects, interconnection solder joint carries the power of chip internal circuits and external circuit and the transport of signal, and its quality and reliability plays conclusive effect to the function of device and life-span.The chip bonding pad of current integrated circuit adopts aluminium lamination structure usually, substrate bonding refers to the gold plate structure usually adopting good stability antioxygenic property strong, lead between chip bonding pad and shell bonding refer to interconnects and then adopts is the widely used gold ball bonding bonding technology of industry, by hot sound ball bonding mode realize chip bonding pad aluminum metallization layers and the gold-plated bonding of substrate refer between interconnection.
In gold ball bonding bonding process, inevitably there is the gold-aluminium bonding system between spun gold and chip aluminium lamination, the long-term reliability problems of gold-aluminium bonding is mainly manifested in integrated circuit and lost efficacy at the gold-aluminium bonding worked or occur in storage process, shows as device function parameter degradation or disabler.Because the aluminum pad on spun gold and chip is dissimilar metal, its lattice constant is different with thermal coefficient of expansion, between gold-aluminium, diffusion rate also exists significant difference, after Long-Time Service, inherent golden aluminium weld interface place easily forms Ke Kendaer (Kirkendall) cavity and forms AuA1 with certain hour scope at a certain temperature, Au5Al2, Au4A1, AuA12, the intermetallic compound of the multiple mechanical strength extreme difference such as Au2A1, and along with the increase of temperature and time, the formation of cavity and intermetallic compound will be accelerated, with the generation of intermetallic compound, bond contact resistance becomes large, reduce the electric property of contact area, cause device parameter shift, even open a way and lost efficacy, affect the long-term reliability of product.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of method promoting gold-aluminium bonding long-term reliability is provided, the structural change of chip aluminum pad is become golden pad structure by sputtering barrier layer TiW alloy with the mode of plating weld layer gold by it, golden aluminum dissimilar metal bonding weld interface is changed over golden same metal bonding weld interface, thoroughly solves the long-term reliability problems of the integrated circuit (IC)-components that golden aluminum dissimilar metal bonding causes.The technical solution used in the present invention is:
Promote a method for gold-aluminium bonding long-term reliability, comprise the steps:
Step one, the disk supplied materials containing Aluminum layer pad structure receives; Containing chip on described disk; Chip surface has aluminum pad;
Step 2, the position coordinates according to the aluminum pad on supplied materials disk chips surface customizes special mask blank; The effect of mask blank can pass through at the band of position ultraviolet light of chip aluminum pad, stopped at the non-welding disking area ultraviolet light of chip;
Step 3, cleans the disk containing aluminum pad structure, removes disk surfaces impurity;
Step 4, adopts photoetching and electric plating method that the disk of aluminum pad structure is modified as the disk of golden pad structure.
Further, described step 3 specifically comprises:
Step 3-1, cleans the disk containing aluminum pad structure, to remove the impurity of disk surfaces;
Step 3-2, the disk after clean carries out dewatered drying process, makes it reach clean dry.
Further, described step 4 specifically comprises:
Step 4-1, on the whole surface sputtering barrier layer of aluminum pad structure disk; The material on barrier layer is TiW alloy;
Step 4-2, sputters one deck weld layer again on the whole surface of aluminum pad structure disk; The material of weld layer is metal A u;
Step 4-3, coats photoetching colloid in aluminum pad structure disk surfaces, and baking-curing;
Step 4-4, adopts special mask blank, by lithographic equipment by the pad on the aluminium lamination on the land pattern aligning disk on special mask blank;
Step 4-5, carries out ultraviolet exposure; Developer solution is adopted to remove the photoresist of exposed portion;
Step 4-6, cures disk, carves residual solvent in glue to remove post-develop;
Step 4-7, by the mode of plating, the weld layer electroplating surface last layer weld layer gold exposed;
Step 4-8, removes the photoresist of disk surfaces;
Step 4-9, removes after photoresist, adopts etching technics to etch away the TiW on barrier layer beyond to weld layer gold and the Au of weld layer;
Step 4-10, finally carries out rinsing and drying to disk.
Further,
In step 4-1, the thickness on barrier layer is 3000 ~ 5000.
In step 4-2, the thickness of weld layer is 1000 ~ 2000.
In step 4-3, disk is placed and is adopted 120 DEG C in an oven, and 30min condition carries out baking-curing.
In step 4-7, the thickness of weld layer gold 13 is 20000 ~ 30000.
The invention has the advantages that: at present do not see efficient solution for the gold-aluminium bonding long-term reliability problems of aluminum pad and to determine measure, and the present invention forms golden aluminium weld interface by sputtering barrier layer TiW alloy barrier between aluminum pad and gold goal, golden face of weld is formed by the mode of the electroplating surface weld layer gold at barrier layer TiW, form golden same metal bonding when follow-up gold ball bonding bonding, thoroughly solve the long-term reliability problems of the gold-aluminium bonding that aluminum pad and gold ball bond are formed.
Accompanying drawing explanation
Fig. 1 is the structural representation of the first embodiment of the present invention.
Fig. 2 is the enlarged drawing of a chip in Fig. 1 gold solder dish disk.
Fig. 3 is be the left view of a chip in Fig. 1 gold solder dish disk.
Fig. 4 is a gold solder dish structural section schematic diagram in Fig. 2 chip.
Fig. 5 is aluminum pad structure disk schematic diagram in embodiment.
Fig. 6 a is the one single chip schematic diagram containing aluminum pad structure in embodiment on disk.
Fig. 6 b is the left view of Fig. 6 a.
Fig. 7 is aluminum pad structural section schematic diagram in embodiment.
Fig. 8 a is that in embodiment, dedicated optical carves mask plate schematic diagram.
Fig. 8 b is the left view of Fig. 8 a.
Fig. 9 is aluminum pad structure disk whole surface sputtering barrier layer schematic diagram in embodiment.
Figure 10 is aluminum pad structure disk whole surface sputtering weld layer schematic diagram in embodiment.
Figure 11 is aluminum pad structure disk surfaces resist coating body schematic diagram in embodiment.
Figure 12 is embodiment middle-ultraviolet lamp exposure schematic diagram.
Figure 13 is the photoresist schematic diagram adopting developer solution to remove exposed portion in embodiment.
Figure 14 is the weld layer electroplating surface one deck weld layer gold schematic diagram exposed in embodiment.
Figure 15 is the photoresist schematic diagram removing disk surfaces in embodiment.
Figure 16 is the TiW on the barrier layer etched away in embodiment beyond to weld layer gold and the Au schematic diagram of weld layer.
Figure 17 is flow chart of the present invention.
Embodiment
Below in conjunction with concrete drawings and Examples, the invention will be further described.
The method of lifting gold-aluminium bonding long-term reliability proposed by the invention, as shown in Fig. 5 ~ 16, the method comprises the following steps:
Step one, receives the disk 1 of Aluminum layer pad structure, as shown in Figure 5.This disk can be 5 ", 6 ", 8 " or 12 " any class, comprise the chip 2 of many arbitrary dimensions in disk, see shown in Fig. 6 a and Fig. 6 b.Chip surface includes multiple aluminum pad 3, the structure of these aluminum pads 3 comprises silicon dioxide layer 4, aluminium lamination 5, spacer medium layer 6, passivation layer 7, its schematic cross-section (will form golden aluminum dissimilar metal bonding weld interface when surface bond gold goal at aluminium lamination 5, affect the long-term reliability of integrated circuit (IC)-components) as shown in Figure 7.
Step 2, customize special mask blank 8 according to the position coordinates of aluminum pad on chip, its structural representation is shown in shown in Fig. 8 a and Fig. 8 b.The effect of mask blank can pass through at the band of position (corresponding to Fig. 8 a and the 8b empty place) ultraviolet light of chip aluminum pad, stopped, impermeable at non-welding disking area (in corresponding to Fig. 8 a and the 8b non-blank-white place) ultraviolet light of chip.
Step 3, cleans the disk containing aluminum pad structure, removes disk surfaces impurity; Specifically comprise:
Step 3-1, after mask plate 8 makes, cleans the disk 1 containing aluminum pad structure, can the impurity such as more adsorbable granular surface contaminant, organic substance, mobile particles to remove disk surfaces.
Step 3-2, the crystal column surface after clean may containing certain moisture, and adopt 120 DEG C in an oven so must place, the condition of 30min carries out dewatered drying process, to increase the Adhering capacity of photoresist and aluminum pad disk surfaces.
Step 4, adopts photoetching and electric plating method that the disk of aluminum pad structure is modified as the disk of golden pad structure.Described in specific as follows:
Step 4-1, on the whole surface sputtering barrier layer 9 of aluminum pad structure disk;
In this step, adopt sputtering equipment, on the whole surface sputtering barrier layer 9 of aluminum pad structure disk; The material on barrier layer 9 is TiW alloy, thickness about 3000 ~ 5000, and there is good adhesive attraction on it and aluminum pad surface, can stop again that aluminum pad surface forms golden aluminium weld interface with weld layer metal A u simultaneously.Its pad cross section structure schematic diagram as shown in Figure 9.
Step 4-2, sputters one deck weld layer 10 again on the whole surface of aluminum pad structure disk;
After TiW alloy barrier layer 9 sputters, adopt sputtering equipment, sputter one deck weld layer 10 again on the whole surface of aluminum pad structure disk, the material of weld layer 10 is metal A u, its thickness about 1000 ~ 2000, its pad cross section structure schematic diagram as shown in Figure 10.
Step 4-3, coats photoetching colloid 11 in aluminum pad structure disk surfaces, and baking-curing;
After weld layer 10 sputters, adopt equipment for evenly dividing glue to coat photoetching colloid 11 on the whole surface of aluminum pad structure disk, the even glue schematic diagram of aluminum pad disk as shown in Figure 11.Then carry out the baking-curing under condition of heating, make the solvent evaporates in photoresist, glued membrane is dry.Specifically according to the characteristic of institute's resist coating, placed by disk and adopt 120 DEG C in an oven, 30min condition carries out baking-curing, makes the solvent evaporates in photoresist, and glued membrane is dry.
Step 4-4, adopts special mask blank 8, by lithographic equipment by the pad on the aluminium lamination 5 on the land pattern aligning disk on special mask blank 8;
Step 4-5, is exposed by ultraviolet 12, and the pad region ultraviolet light on aluminium lamination 5 all can not be through through, the pad region ultraviolet light on non-aluminium lamination, and exposure schematic diagram as shown in Figure 12.
After exposure, adopt developer solution to remove the photoresist of exposed portion, the photoresist of exposed portion and developer solution effect are also dissolved in water, and unexposed portion is not with developer solution effect and maintain the original state.As shown in Figure 13.
Step 4-6, placed by disk and carry out 120 DEG C in an oven, 30min cures, and carves residual solvent in glue, improve photoresist to the adhesiveness of silicon chip surface to remove post-develop.
Step 4-7, by the mode of plating, the weld layer 10 electroplating surface last layer weld layer gold 13 exposed, its thickness about 20000 ~ 30000, for follow-up gold ball bonding, form golden weld interface with gold goal, thoroughly solve the long-term reliability problems of the integrated circuit (IC)-components that golden aluminum dissimilar metal bonding causes.Pad cross section structure schematic diagram as shown in Figure 14.
Step 4-8, after plating weld layer gold 13, adopt plasma adhesive supplier or supporting stripper removes the photoresist of disk surfaces with photoresist, its pad cross section structure schematic diagram as shown in Figure 15.
Step 4-9, after removing photoresist, adopt etching technics to etch away the TiW on the barrier layer 9 beyond to weld layer the gold 13 and Au of weld layer 10, its pad cross section structure schematic diagram as shown in Figure 16.
Step 4-10, after etching, carries out rinsing and drying to disk, after aluminum pad structure disk convert golden pad structure disk step to and all complete.
Follow-uply golden pad structure disk can be carried out being divided into little chip, adopt gold ball bonding bonding to form golden same metal bonded interface on weld layer gold 13 surface, thoroughly solve the long-term reliability problems of the integrated circuit (IC)-components that golden aluminum dissimilar metal bonding causes.
By adopting the mode of sputtering barrier layer TiW alloy and plating weld layer gold that the structural change of chip aluminum pad is become golden pad structure, (sputtering barrier layer TiW blocks between aluminum pad and gold goal and forms golden aluminium weld interface in the present invention, golden face of weld is formed) at the electroplating surface weld layer gold of barrier layer TiW, golden aluminum dissimilar metal bonding weld interface is changed over golden same metal bonding weld interface, thoroughly solves the long-term reliability problems of the integrated circuit (IC)-components that golden aluminum dissimilar metal bonding causes.
Claims (7)
1. promote a method for gold-aluminium bonding long-term reliability, it is characterized in that, comprise the steps:
Step one, disk (1) supplied materials containing Aluminum layer pad structure receives; Described disk (1) is upper containing chip (2); Chip (2) surface has aluminum pad (3);
Step 2, customizes special mask blank (8) according to the position coordinates of the aluminum pad on supplied materials disk chips surface; The effect of mask blank (8) can pass through at the band of position ultraviolet light of chip aluminum pad, stopped at the non-welding disking area ultraviolet light of chip;
Step 3, cleans the disk containing aluminum pad structure, removes disk surfaces impurity;
Step 4, adopts photoetching and electric plating method that the disk of aluminum pad structure is modified as the disk of golden pad structure.
2. the method promoting gold-aluminium bonding long-term reliability as claimed in claim 1, it is characterized in that, described step 3 specifically comprises:
Step 3-1, cleans the disk (1) containing aluminum pad structure, to remove the impurity of disk surfaces;
Step 3-2, the disk after clean carries out dewatered drying process, makes it reach clean dry.
3. the method promoting gold-aluminium bonding long-term reliability as claimed in claim 1, it is characterized in that, described step 4 specifically comprises:
Step 4-1, the whole surface sputtering barrier layer (9) of aluminum pad structure disk; The material on barrier layer (9) is TiW alloy;
Step 4-2, sputters one deck weld layer (10) again on the whole surface of aluminum pad structure disk; The material of weld layer (10) is metal A u;
Step 4-3, coats photoetching colloid (11) in aluminum pad structure disk surfaces, and baking-curing;
Step 4-4, adopts special mask blank (8), by lithographic equipment by the pad on the aluminium lamination (5) on the land pattern aligning disk on special mask blank (8);
Step 4-5, carries out ultraviolet exposure; Developer solution is adopted to remove the photoresist of exposed portion;
Step 4-6, cures disk, carves residual solvent in glue to remove post-develop;
Step 4-7, by the mode of plating, at the weld layer exposed (10) electroplating surface last layer weld layer gold (13);
Step 4-8, removes the photoresist of disk surfaces;
Step 4-9, after removing photoresist, adopts etching technics to etch away the TiW on the barrier layer (9) beyond to weld layer gold (13) and the Au of weld layer (10);
Step 4-10, finally carries out rinsing and drying to disk.
4. the method promoting gold-aluminium bonding long-term reliability as claimed in claim 3, is characterized in that:
In step 4-1, the thickness of barrier layer (9) is 3000 ~ 5000.
5. the method promoting gold-aluminium bonding long-term reliability as claimed in claim 3, is characterized in that:
In step 4-2, the thickness of weld layer (10) is 1000 ~ 2000.
6. the method promoting gold-aluminium bonding long-term reliability as claimed in claim 3, is characterized in that:
In step 4-3, disk is placed and is adopted 120 DEG C in an oven, and 30min condition carries out baking-curing.
7. the method promoting gold-aluminium bonding long-term reliability as claimed in claim 3, is characterized in that:
In step 4-7, the thickness of weld layer gold (13) is 20000 ~ 30000.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410725307.8A CN104409371A (en) | 2014-12-03 | 2014-12-03 | Method for improving long-term reliability of gold-aluminum bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410725307.8A CN104409371A (en) | 2014-12-03 | 2014-12-03 | Method for improving long-term reliability of gold-aluminum bonding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104409371A true CN104409371A (en) | 2015-03-11 |
Family
ID=52646987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410725307.8A Pending CN104409371A (en) | 2014-12-03 | 2014-12-03 | Method for improving long-term reliability of gold-aluminum bonding |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104409371A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863629A (en) * | 2020-08-04 | 2020-10-30 | 青岛智腾微电子有限公司 | Preparation method of high-temperature high-reliability thick-film Al bonding pad |
| CN112486892A (en) * | 2020-12-15 | 2021-03-12 | 泰和电路科技（惠州）有限公司 | Computing method of binding IC (integrated circuit) control calculator |
| CN113299571A (en) * | 2021-05-21 | 2021-08-24 | 无锡兴华衡辉科技有限公司 | Method for improving Au-Al bonding strength and reliability |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3585461A (en) * | 1968-02-19 | 1971-06-15 | Westinghouse Electric Corp | High reliability semiconductive devices and integrated circuits |
| US20040070086A1 (en) * | 2002-10-15 | 2004-04-15 | Marvell Semiconductor, Inc. | Fabrication of wire bond pads over underlying active devices, passive devices and /or dielectric layers in integrated circuits |
| CN1866467A (en) * | 2005-05-18 | 2006-11-22 | 米辑电子股份有限公司 | Circuitry component fabricating method |
| CN1897268A (en) * | 2005-07-13 | 2007-01-17 | 精工爱普生株式会社 | Semiconductor device |
| US20080012132A1 (en) * | 2004-07-14 | 2008-01-17 | Megica Corporation | Chip structure with redistribution traces |
| CN101449376A (en) * | 2006-05-23 | 2009-06-03 | 飞思卡尔半导体公司 | Contact surrounded by passivation and polymide and method therefor |
-
2014
- 2014-12-03 CN CN201410725307.8A patent/CN104409371A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3585461A (en) * | 1968-02-19 | 1971-06-15 | Westinghouse Electric Corp | High reliability semiconductive devices and integrated circuits |
| US20040070086A1 (en) * | 2002-10-15 | 2004-04-15 | Marvell Semiconductor, Inc. | Fabrication of wire bond pads over underlying active devices, passive devices and /or dielectric layers in integrated circuits |
| US20080012132A1 (en) * | 2004-07-14 | 2008-01-17 | Megica Corporation | Chip structure with redistribution traces |
| CN1866467A (en) * | 2005-05-18 | 2006-11-22 | 米辑电子股份有限公司 | Circuitry component fabricating method |
| CN1897268A (en) * | 2005-07-13 | 2007-01-17 | 精工爱普生株式会社 | Semiconductor device |
| CN101449376A (en) * | 2006-05-23 | 2009-06-03 | 飞思卡尔半导体公司 | Contact surrounded by passivation and polymide and method therefor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863629A (en) * | 2020-08-04 | 2020-10-30 | 青岛智腾微电子有限公司 | Preparation method of high-temperature high-reliability thick-film Al bonding pad |
| CN112486892A (en) * | 2020-12-15 | 2021-03-12 | 泰和电路科技（惠州）有限公司 | Computing method of binding IC (integrated circuit) control calculator |
| CN112486892B (en) * | 2020-12-15 | 2024-07-26 | 泰和电路科技（惠州）有限公司 | Calculation method of bonding IC (integrated circuit) management and control calculator |
| CN113299571A (en) * | 2021-05-21 | 2021-08-24 | 无锡兴华衡辉科技有限公司 | Method for improving Au-Al bonding strength and reliability |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101870169B1 (en) | Semiconductor Package having Redistribution Line and Method of manufacturing the same | |
| JP5585447B2 (en) | Semiconductor device and manufacturing method thereof | |
| US20150008566A1 (en) | Method and structure of panelized packaging of semiconductor devices | |
| TWI575614B (en) | Semiconductor device and method of forming reduced surface roughness in molded underfill for improved c-sam inspection | |
| US20090189279A1 (en) | Methods and systems for packaging integrated circuits | |
| US20080128848A1 (en) | Solid-state imaging device | |
| US20170135219A1 (en) | Carrier ultra thin substrate | |
| JPH04326534A (en) | Chip bonding method of semiconductor device | |
| TW201405735A (en) | Grid fan-out wafer level package and methods of manufacturing a grid fan-out wafer level package | |
| US20110230043A1 (en) | Tape residue-free bump area after wafer back grinding | |
| WO2017000852A1 (en) | Method of manufacturing fan-out wafer-level package | |
| US9159685B2 (en) | Conductive structure and method for forming the same | |
| JP3451987B2 (en) | Functional element, substrate for mounting functional element, and method of connecting them | |
| WO2008023826A1 (en) | Semiconductor device and its manufacturing method | |
| WO2022214058A1 (en) | Metal bump structure and manufacturing method | |
| CN104409371A (en) | Method for improving long-term reliability of gold-aluminum bonding | |
| US20140191379A1 (en) | Low-k chip packaging structure | |
| JP2005033153A (en) | Multilayer fine wiring interposer and its manufacturing method | |
| CN103413770A (en) | Salient point manufacturing method | |
| US7952200B2 (en) | Semiconductor device including a copolymer layer | |
| JP2017526168A (en) | Structure and method of batch packaging low pin count embedded semiconductor chip | |
| CN106298719A (en) | Metal bump structure and forming method thereof | |
| JP2002313985A (en) | Method of manufacturing chip size package | |
| TWI420610B (en) | Semiconductor device and manufacturing method therefor | |
| JP2006332694A (en) | Method for forming metal bumps on semiconductor surface |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150311 |