CN104401936B - A kind of method at substrate level direction controllable growth carbon nano-tube bundle - Google Patents
A kind of method at substrate level direction controllable growth carbon nano-tube bundle Download PDFInfo
- Publication number
- CN104401936B CN104401936B CN201410792370.3A CN201410792370A CN104401936B CN 104401936 B CN104401936 B CN 104401936B CN 201410792370 A CN201410792370 A CN 201410792370A CN 104401936 B CN104401936 B CN 104401936B
- Authority
- CN
- China
- Prior art keywords
- micro
- substrate
- nano
- tube bundle
- carbon nano
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Carbon And Carbon Compounds (AREA)
- Catalysts (AREA)
Abstract
The invention discloses a kind of method at substrate level direction controllable growth carbon nano-tube bundle, belong to technical field of nanometer material preparation.The method comprises the steps: (1) at first substrate surface processes the micro-nano channel of horizontal direction; (2) one end depositing catalytic film bottom micro-nano channel, and carry out graphically to it; (3) bonding technology is adopted to cover above micro-nano channel by second substrate; (4) on second substrate, etch the passage be communicated with micro-nano channel, form semi-enclosed micro-nano channel; (5) carbon nano-tube bundle in semi-enclosed micro-nano channel; (6) CNT in removing second substrate, passage and the substrate of carbon nano-tube bundle surrounding thereof, namely obtain the carbon nano-tube bundle with micro-nano channel consistent size in substrate level direction.Its advantage is: the carbon nano-tube bundle that can obtain orientation, size, position controllable precise on substrate level direction; Technical process is simple, is easy to realize, of many uses.
Description
Technical field
The present invention relates to a kind of method at substrate level direction controllable growth carbon nano-tube bundle, belong to technical field of nanometer material preparation.
Background technology
CNT is the body of seamless, the hollow that the graphene sheet layer that formed by carbon atom is curling, and diameter is between a few nanometer to tens nanometer, and length can reach more than some tens of pm.As the monodimension nanometer material of uniqueness, CNT has excellent mechanical property, outstanding electric property and stable chemical property, shows application prospect widely in various fields such as quantum physics research, nanometer electronic device, nano-probe, field emission source, super large capacitor, high strength composite, hydrogen storage materials.In above numerous application, particularly in nanometer electronic device field, the carbon nano-tube bundle that can grow oldered array structure on substrate level direction is the important prerequisite realizing CNT practical application.
All the time, CNT orientations is in the horizontal direction all a great problem of CNT research field.At present, realize CNT horizontal alignment aligning method and mainly contain two classes: a kind of is directly realize the oriented growth in CNT horizontal direction; Another kind the CNT grown is carried out in the horizontal direction rear synthesis arrangement.For the carbon nano-tube oriented growth in horizontal direction, mainly based on chemical vapour deposition technique.Existing research proves, introduces electric field, horizontal growth that magnetic field significantly can promote CNT in chemical vapour deposition technique (CVD) system, but still can deposit the CNT grown in other directions in this approach.In addition, in growth course, control air-flow in CVD system direction and speed can directly prepare the CNT aligned, current this air-flow revulsion prepares the most effective and the most general method of the parallel carbon nano pipe array of overlength on a silicon substrate, but this method can not realize the accurate located growth of CNT.Adopt porous material as template matrix, on matrix, directly growing the carbon nano pipe array with certain orientation by CVD method is also the method preparing oriented growth of carbon nanometer tube extensively adopted at present.But this method mainly exists following defect: one is that through-hole template in horizontal direction prepares poor controllability, although at present can via densities on Control architecture, still cannot accurately control for pore size and arrays of openings; Two is that through-hole template in preparation horizontal direction is very difficult and later stage template process is comparatively complicated.The CNT grown is carried out in the horizontal direction to the method for rear synthesis arrangement, mainly contain mechanical stretching method, flow process, electric field method, magnetic field method and Langmuir-Blodgett (LB) method.Ranking method is synthesized after these, although can in advance by Impurity removals such as catalyst, arrangement mild condition, and easily obtain large-scale, height-oriented carbon nano-tube bundle, but during dispersing Nano carbon tubes bundle will certainly destroying carbon nanometer tube structure and introduce impurity, and these methods also accurately cannot control position and the size of carbon nano-tube bundle.
In sum, prior art cannot realize the carbon nano-tube bundle of size on substrate level direction, position controllable precise, can not meet the demand of most of nanometer electronic device.
Summary of the invention
For existing methodical deficiency, the invention provides a kind of method at substrate level direction controllable growth carbon nano-tube bundle, realize carbon nano-tube bundle orientation, size, position controllable precise on substrate.
Object of the present invention is achieved through the following technical solutions:
In a method for substrate level direction controllable growth carbon nano-tube bundle, comprise the steps:
(1) photoetching and etching technics is adopted to process the micro-nano channel of horizontal direction at first substrate surface;
(2) one end depositing catalytic film bottom the micro-nano channel adopting thin film deposition processes and photoetching process to process in step (1), and graphical to it;
(3) adopt bonding technology to be covered above the micro-nano channel after step (2) depositing catalytic film by second substrate, form closed micro-nano channel;
(4) thinning second substrate also etches the passage be connected with micro-nano channel thereon, and passage is positioned at micro-nano channel other end top, forms semi-enclosed micro-nano channel;
(5) chemical vapor deposition method carbon nano-tube bundle in semi-enclosed micro-nano channel prepared by step (4) is adopted;
(6) adopt grinding successively, CMP process removes CNT in second substrate and passage, adopt etching technics to remove the substrate of carbon nano-tube bundle surrounding, namely obtain the carbon nano-tube bundle with micro-nano channel consistent size in first substrate level direction.
Said method also comprises the steps: that the substrate after first step (5) being processed soaks more than 10 minutes, then heat cure in thermosetting acrylic resin.
The material of the first substrate in described step (1) is exotic material; The material of second substrate in described step (3) is exotic material.
Described exotic material is silicon, quartz or aluminium oxide.
Catalytic membrane in described step (2) comprises transition metal layer and alundum (Al2O3) layer from top to bottom successively.
Described transition metal layer is Fe layer, Co layer or Ni layer.
The thickness of described alundum (Al2O3) layer is 6 ~ 12 nanometers, and the thickness of transition metal layer is 1 ~ 3 nanometer.
The width of described catalytic membrane is identical with micro-nano channel width, and length is more than 110% of the micro-nano channel degree of depth.
The temperature of the bonding technology in described step (3) is 600-800 DEG C.
Thickness after described second substrate is thinning is less than 10 microns.
The width of the passage in described step (4) is identical with micro-nano channel width, and length is greater than the width of micro-nano channel and is less than 2/3rds of the length of micro-nano channel.
Substrate plane direction carbon nano-tube bundle preparation technology's flow process as shown in Figure 1, specifically comprise the steps:
(1) micro-nano channel 2 photoetching and the first substrate 1 surface level direction of etching technics after cleaning-drying processing required size is adopted;
(2) thin film deposition processes is used to deposit the adhesion layer (such as alundum (Al2O3) layer) of 6 ~ 12 nanometer thickness and the transition metal layer of 1 ~ 3 nanometer thickness on the surface successively at first substrate 1, adhesion layer and transition metal layer composition catalytic membrane 3, adopt photoetching and etching technics that catalytic membrane 3 is graphical, and graphical after catalytic membrane 3 be just positioned at one end bottom micro-nano channel 2;
(3) second substrate 4 is covered the top of the micro-nano channel 2 of first substrate 1, use bonding technology first substrate 1 and second substrate 4 to be combined securely, micro-nano channel 2 is closed;
(4) thickness of grinding and thinning second substrate 4 of CMP process is adopted, until less than 10 microns, micro-nano channel 2 top, anomaly face, then on second substrate 4, etch the passage 5 be connected with plane micro-nano channel 2, passage 5 is positioned at micro-nano channel 2 other end top, forms semi-enclosed micro-nano channel 2;
(5) the first substrate 1 defining semi-enclosed micro-nano channel 2 is put into chemical gas-phase deposition system, adopt chemical vapor deposition method along semi-enclosed micro-nano channel 2 carbon nano-tube, until carbon nano-tube bundle 6 fills full micro-nano channel and passage;
(6) adopt grinding successively, CMP process grinds off second substrate 4 above micro-nano channel 2 and the CNT in passage 5, adopt etching technics to remove the substrate of carbon nano-tube bundle surrounding, namely obtain the carbon nano-tube bundle 7 with micro-nano channel 2 consistent size at first substrate 1 in-plane.
The first substrate used or second substrate are the substrate that semiconductor technology can be used to process, and its material can be silicon, germanium silicon, gallium nitride, carborundum, GaAs, silica, zirconia, magnesia or the exotic material containing these materials.
When the thickness of second substrate is greater than 10 microns, can grinding and CMP process be adopted to carry out thinning to it before etching passage, the distance being thinned to the top of second substrate and the top of micro-nano channel be less than 10 microns.
Can control carbon nano-tube film size further as required, concrete grammar is: by micro-nano channel the substrate of carbon nano-tube bundle be immersed in good fluidity and in curable polymer more than 10 minutes, heat cure, carbon nano-tube bundle is made to form organic whole under the effect of polymer, then grinding, the further thinning micro-nano channel 2 of chemical mechanical polishing technique is used successively, synchronously grind off the unwanted CNT in upper strata, controlled the thickness of carbon nano-tube bundle 7 by the change in depth of micro-nano channel 2.
The present invention is based on existing vertical through hole method.Vertical through hole method adopts microelectronic technique on substrate, process vertical through hole and realize the filling of catalytic membrane in vertical through hole, and recycling chemical vapor deposition method realizes CNT and grows at vertical through hole interior orientation.By the growth course of the position of vertical through hole and catalytic membrane, size, shape restriction carbon nano-tube bundle, finally achieve the controllable growth of substrate vertical direction carbon nano-tube bundle.But, still do not realize the growth of substrate level through hole carbon nano-tube bundle at present.Microelectronic technique and bonding technology combine by the present invention, substrate plane direction processes semi-enclosed micro-nano channel and realizes the filling of catalytic membrane in micro-nano channel, utilize the position of micro-nano channel and catalytic membrane, shape, the size restriction growth position of carbon nano-tube bundle, direction and size, the final chemical vapor deposition method that adopts realizes the controllable growth of carbon nano-tube bundle on substrate level direction.
The present invention processes micro-nano channel in the position that substrate is corresponding according to demand, and the position of micro-nano channel has has just regulated and controled CNT in on-chip position, the size of micro-nano channel determines the size of CNT, the position of catalytic membrane determines the direction of growth of CNT, that is according to the demand of producing, the CNT in required size and direction can be grown in the position that substrate is specified.
The invention has the beneficial effects as follows:
1) carbon nano-tube bundle of orientation, size, position controllable precise can be obtained on substrate level direction;
2) adopt technique to be microelectronic technique and the micro-electromechanical processing technology of standard, be beneficial to and realize based on the integrated nanometer electronic device of CNT;
3) technical process is simple, is easy to realize, and is easy to integrated, of many uses.
Accompanying drawing explanation
Fig. 1 is substrate plane direction of the present invention carbon nano-tube bundle preparation method flow chart;
Fig. 2 is embodiment of the present invention result of implementation schematic diagram;
Wherein, 1-first substrate, 2-micro-nano channel, 3-catalytic membrane, 4-second substrate, 5-passage, 6-carbon nano-tube bundle, 7-is filled in the carbon nano-tube bundle in micro-nano channel.
Detailed description of the invention
Be further described technical scheme of the present invention below in conjunction with accompanying drawing and specific embodiment, following examples do not form limitation of the invention.
Embodiment 1
(1) first silicon chip 1 is prepared, adopt conventional semiconductor cleaning to clean, dry, use photoetching process and ion reaction etching technique to need the position of carbon nano-tube bundle to process long 10 microns at silicon chip surface, wide 2 microns, the horizontal direction micro-nano channel 2 of dark 2 microns;
(2) adopt sol evenning machine at first silicon chip 1 surperficial spin coating one deck AZ4620 photoresist, thickness is 3 microns, exposure imaging exposes catalytic membrane deposition window, use electron beam evaporation process on first silicon chip surface, deposit the alundum (Al2O3) layer of 6 nanometer thickness and the Co layer composition catalytic membrane 3 of 1 nanometer thickness successively, remove photoresist, catalytic membrane on photoresist is removed thereupon together, to stay in micro-nano channel 2 graphical after catalytic membrane 3, catalytic membrane be of a size of wide 2 microns, long 2.2 microns;
(3) prepare second silicon chip 4, adopt conventional semiconductor cleaning to clean, dry, silicon chip 4 is covered above silicon chip 1 micro-nano channel 2, under 800 DEG C of conditions, carry out silicon-silicon vacuum bonding technique, silicon chip 1 and silicon chip 4 are combined as a whole, plane micro-nano channel 2 is closed;
(4) grinding and mechanical polishing process is used to carry out thinning to silicon chip 4 successively, be thinned to 10 microns, micro-nano channel top, anomaly face, photoetching process is used on thinning rear silicon chip 4, to etch the passage 5 be connected with plane micro-nano channel 2 with deep reaction ion etching technique, passage 5 is in the other end top that in micro-nano channel 2, catalytic membrane 3 place end is corresponding, is of a size of wide 2 microns, length 2.2 microns;
(5) silicon chip 1 etched is put into chemical gas-phase deposition system, pass into the argon gas of 900sccm and the hydrogen of 100sccm, silicon chip be heated to 700 DEG C simultaneously and keep 15 minutes; Be filled with the acetylene gas of 6sccm in the reactor, the flow of argon gas and hydrogen be adjusted to 500sccm simultaneously, carry out the growth of CNT in micro-nano channel; Carbon nano-tube bundle closes acetylene gas grow 15 minutes in passage after, and argon gas is adjusted to 900sccm, and hydrogen is adjusted to 100sccm, stop heating simultaneously, take out first silicon chip 1 under naturally cooling to room temperature, so far, in micro-nano channel 2 and passage 5, fill full carbon nano-tube bundle 6;
(6) employing grinding and chemical mechanical polishing method grind off the CNT in second silicon chip 4 and passage 5 successively, expose carbon nano-tube bundle, adopt etching technics by the wafer thinning 2um outside carbon nano-tube bundle, obtain consistent with micro-nano channel 2, long 10 microns, wide 2 microns, the carbon nano-tube bundle 7(of thick 2 microns forms the result schematic diagram of carbon nano-tube bundle as shown in Figure 2 on silicon wafer horizontal direction).
Embodiment 2
(1) quartz plate 1 is prepared, adopt conventional semiconductor cleaning to clean, dry, use photoetching process and ion reaction etching technique to need the position of carbon nano-tube bundle to process long 10 microns on quartz plate surface, wide 2 microns, the horizontal direction micro-nano channel 2 of dark 2 microns;
(2) adopt sol evenning machine at quartz plate 1 surperficial spin coating one deck AZ4620 photoresist, thickness is 3 microns, exposure imaging exposes catalytic membrane deposition window, electron beam evaporation process is used to deposit the alundum (Al2O3) layer of 10 nanometer thickness and the Fe layer composition catalytic membrane 3 of 2 nanometer thickness on the surface successively at quartz plate, remove photoresist, catalytic membrane on photoresist is removed thereupon together, to stay in micro-nano channel 2 graphical after catalytic membrane 3, catalytic membrane be of a size of wide 2 microns, long 2.3 microns;
(3) prepare silicon chip 4, adopt conventional semiconductor cleaning to clean, dry, silicon chip 4 is covered above quartz plate 1 micro-nano channel 2, under 600 DEG C of conditions, carry out silicon-Bo vacuum bonding technique, quartz plate 1 and silicon chip 4 are combined as a whole, plane micro-nano channel 2 is closed;
(4) grinding and mechanical polishing process is used to carry out thinning to silicon chip 4 successively, be thinned to apart from horizontal 6 microns, micro-nano channel 2 top, use on photoetching process and the deep reaction ion etching technique silicon chip 4 after thinning and etch the passage 5 be connected with plane micro-nano channel 2, passage 5 is in the other end top that in micro-nano channel 2, catalytic membrane 3 place end is corresponding, is of a size of wide 2 microns, length 2.6 microns;
(5) quartz plate 1 etched is put into chemical gas-phase deposition system, pass into the argon gas of 900sccm and the hydrogen of 100sccm, quartz plate be heated to 700 DEG C simultaneously and keep 15 minutes; Be filled with the acetylene gas of 6sccm in the reactor, the flow of argon gas and hydrogen be adjusted to 500sccm simultaneously, carry out the growth of CNT in micro-nano channel; Carbon nano-tube bundle closes acetylene gas grow 15 minutes in passage after, argon gas is adjusted to 900sccm, hydrogen is adjusted to 100sccm, stop heating simultaneously, quartz plate 1 is taken out under naturally cooling to room temperature, so far, full carbon nano-tube bundle 6 is filled in micro-nano channel 2 and passage 5, the quartz plate 1 having grown carbon nano-tube bundle to be immersed in thermosetting acrylic resin 10 minutes, take out, put into baking oven 120 DEG C of heat cures 30 minutes, make CNT bonding one-tenth organic whole under the effect of acrylic resin, be conducive to follow-up attrition process;
(6) CNT in adopt grinding and chemical mechanical polishing method to grind off successively acrylic resin, silicon chip 4 and passage 5 that upper strata is cured, expose carbon nano-tube bundle, adopt etching technics by the thinning 2um of quartz plate 1 outside carbon nano-tube bundle, obtain consistent with micro-nano channel 2, long 10 microns, wide 2 microns, the carbon nano-tube bundle 7 of thick 2 microns.
Embodiment 3
(1) a slice alumina wafer 1 is prepared, adopt conventional semiconductor cleaning to clean, dry, use photoetching process and ion reaction etching technique to need the position of carbon nano-tube bundle to process long 10 microns on alumina wafer surface, wide 2 microns, the horizontal direction micro-nano channel 2 of dark 2 microns;
(2) adopt sol evenning machine at alumina wafer 1 surperficial spin coating one deck AZ4620 photoresist, thickness is 3 microns, exposure imaging exposes catalytic membrane deposition window, electron beam evaporation process is used to deposit the alundum (Al2O3) layer of 12 nanometer thickness and the Ni layer composition catalytic membrane 3 of 3 nanometer thickness on the surface successively at alumina wafer, remove photoresist, catalytic membrane on photoresist is removed thereupon together, to stay in micro-nano channel 2 graphical after catalytic membrane 3, catalytic membrane be of a size of wide 2 microns, long 2.5 microns;
(3) a slice quartz plate 4 is prepared, conventional semiconductor cleaning is adopted to clean, dry, quartz plate 4 is covered above alumina wafer 1 micro-nano channel 2, Bo-Bo vacuum bonding technique is carried out under 600 DEG C of conditions, quartz plate 4 and alumina wafer 1 are combined as a whole, plane micro-nano channel 2 is closed;
(4) grinding and mechanical polishing process is used to carry out thinning to quartz plate 4 successively, be thinned to 4 microns, micro-nano channel top, anomaly face, photoetching process is used on quartz plate 4, to etch with deep reaction ion etching technique the passage 5 be connected with plane micro-nano channel 2, passage 5 is in the other end top that in micro-nano channel 2, catalytic membrane 3 place end is corresponding, is of a size of wide 2 microns, length 3 microns;
(5) alumina wafer 1 etched is put into chemical gas-phase deposition system, pass into the argon gas of 900sccm and the hydrogen of 100sccm, alumina wafer be heated to 700 DEG C simultaneously and keep 15 minutes; Be filled with the acetylene gas of 6sccm in the reactor, the flow of argon gas and hydrogen be adjusted to 500sccm simultaneously, carry out the growth of CNT in micro-nano channel; Carbon nano-tube bundle closes acetylene gas grow 15 minutes in passage after, argon gas is adjusted to 900sccm, hydrogen is adjusted to 100sccm, stop heating simultaneously, alumina wafer 1 is taken out under naturally cooling to room temperature, so far, full carbon nano-tube bundle 6 is filled in micro-nano channel 2 and passage 5, the alumina wafer 1 having grown carbon nano-tube bundle to be immersed in thermosetting acrylic resin 20 minutes, take out, put into baking oven 120 DEG C of heat cures 30 minutes, make CNT bonding one-tenth organic whole under the effect of acrylic resin, be conducive to follow-up attrition process;
(6) CNT in adopt grinding and chemical mechanical polishing method to grind off successively acrylic resin, quartz plate 4 and passage 5 that upper strata is cured, expose carbon nano-tube bundle, adopt etching technics by the thinning 2um of alumina wafer 1 outside carbon nano-tube bundle, obtain consistent with micro-nano channel 2, long 10 microns, wide 2 microns, the carbon nano-tube bundle 7 of thick 2 microns.
Claims (10)
1., in a method for substrate level direction controllable growth carbon nano-tube bundle, it is characterized in that comprising the steps:
(1) photoetching and etching technics is adopted to process the micro-nano channel of horizontal direction at first substrate surface;
(2) one end depositing catalytic film bottom the micro-nano channel adopting thin film deposition processes and photoetching process to process in step (1), and graphical to it;
(3) adopt bonding technology to be covered above the micro-nano channel after step (2) depositing catalytic film by second substrate, form closed micro-nano channel;
(4) thinning second substrate also etches the passage be connected with micro-nano channel thereon, and passage is positioned at micro-nano channel other end top, forms semi-enclosed micro-nano channel;
(5) chemical vapor deposition method carbon nano-tube bundle in semi-enclosed micro-nano channel prepared by step (4) is adopted;
(6) adopt grinding successively, CMP process removes CNT in second substrate and passage, adopt etching technics to remove the substrate of carbon nano-tube bundle surrounding, namely obtain the carbon nano-tube bundle with micro-nano channel consistent size in first substrate level direction.
2. a kind of method at substrate level direction controllable growth carbon nano-tube bundle according to claim 1, it is characterized in that: also comprise the steps: that the substrate after first step (5) being processed soaks more than 10 minutes, then heat cure in thermosetting acrylic resin.
3. a kind of method at substrate level direction controllable growth carbon nano-tube bundle according to claim 1 or 2, is characterized in that: the material of the first substrate in described step (1) is exotic material; The material of second substrate in described step (3) is exotic material.
4. a kind of method at substrate level direction controllable growth carbon nano-tube bundle according to claim 3, is characterized in that: described exotic material is silicon, quartz or aluminium oxide.
5. a kind of method at substrate level direction controllable growth carbon nano-tube bundle according to claim 1 or 2, is characterized in that: the catalytic membrane in described step (2) comprises transition metal layer and alundum (Al2O3) layer from top to bottom successively.
6. a kind of method at substrate level direction controllable growth carbon nano-tube bundle according to claim 5, it is characterized in that: the thickness of described alundum (Al2O3) layer is 6 ~ 12 nanometers, the thickness of transition metal layer is 1 ~ 3 nanometer, and described transition metal layer is Fe layer, Co layer or Ni layer.
7. a kind of method at substrate level direction controllable growth carbon nano-tube bundle according to claim 1,2 or 5, it is characterized in that: the width of described catalytic membrane is identical with micro-nano channel width, length is more than 110% of the micro-nano channel degree of depth.
8. a kind of method at substrate level direction controllable growth carbon nano-tube bundle according to claim 1 or 2, is characterized in that: the temperature of the bonding technology in described step (3) is 600-800 DEG C.
9. a kind of method at substrate level direction controllable growth carbon nano-tube bundle according to claim 1 or 2, is characterized in that: the thickness after described second substrate is thinning is less than 10 microns.
10. a kind of method at substrate level direction controllable growth carbon nano-tube bundle according to claim 1 or 2, it is characterized in that: the width of the passage in described step (4) is identical with micro-nano channel width, length is greater than the width of micro-nano channel and is less than 2/3rds of the length of micro-nano channel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410792370.3A CN104401936B (en) | 2014-12-19 | 2014-12-19 | A kind of method at substrate level direction controllable growth carbon nano-tube bundle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410792370.3A CN104401936B (en) | 2014-12-19 | 2014-12-19 | A kind of method at substrate level direction controllable growth carbon nano-tube bundle |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104401936A CN104401936A (en) | 2015-03-11 |
| CN104401936B true CN104401936B (en) | 2016-04-13 |
Family
ID=52639625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410792370.3A Expired - Fee Related CN104401936B (en) | 2014-12-19 | 2014-12-19 | A kind of method at substrate level direction controllable growth carbon nano-tube bundle |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104401936B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114177959A (en) * | 2021-12-16 | 2022-03-15 | 清华大学 | Preparation method of nano-fluidic chip based on carbon nano-tube |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1334234A (en) * | 2000-07-18 | 2002-02-06 | Lg电子株式会社 | Method of horizontal growth of carbon nanotube and field effect transistor using carbon nanotube |
| CN1660696A (en) * | 2004-02-25 | 2005-08-31 | 三星电子株式会社 | Method of horizontally growing carbon nanotubes and device having the same |
| CN1907845A (en) * | 2005-08-05 | 2007-02-07 | 鸿富锦精密工业（深圳）有限公司 | Carbon nano-tube preparation method and apparatus |
| CN101104509A (en) * | 2007-08-20 | 2008-01-16 | 中山大学 | Method for preparing single nano material in pore space structure |
| CN103265009A (en) * | 2013-05-24 | 2013-08-28 | 厦门大学 | Preparation method of horizontal array carbon nano tube |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008230957A (en) * | 2007-02-20 | 2008-10-02 | National Institute Of Advanced Industrial & Technology | Carbon nanotube film structure and its production method |
| KR100985725B1 (en) * | 2007-09-27 | 2010-10-07 | 세메스 주식회사 | Apparatus and method of producting carbon nano tube |
| US20130181352A1 (en) * | 2012-01-16 | 2013-07-18 | Industry-Academic Cooperation Foundation at NamSeoul Unversity | Method of Growing Carbon Nanotubes Laterally, and Lateral Interconnections and Effect Transistor Using the Same |
-
2014
- 2014-12-19 CN CN201410792370.3A patent/CN104401936B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1334234A (en) * | 2000-07-18 | 2002-02-06 | Lg电子株式会社 | Method of horizontal growth of carbon nanotube and field effect transistor using carbon nanotube |
| CN1660696A (en) * | 2004-02-25 | 2005-08-31 | 三星电子株式会社 | Method of horizontally growing carbon nanotubes and device having the same |
| CN1907845A (en) * | 2005-08-05 | 2007-02-07 | 鸿富锦精密工业（深圳）有限公司 | Carbon nano-tube preparation method and apparatus |
| CN101104509A (en) * | 2007-08-20 | 2008-01-16 | 中山大学 | Method for preparing single nano material in pore space structure |
| CN103265009A (en) * | 2013-05-24 | 2013-08-28 | 厦门大学 | Preparation method of horizontal array carbon nano tube |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104401936A (en) | 2015-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104726845B (en) | The preparation method of the upper graphene nanobelts of h-BN | |
| US9230801B2 (en) | Graphene structure and method of fabricating the same | |
| US9126835B2 (en) | Carbon nanotube film structure and method for manufacturing the same | |
| CN103359719B (en) | Preparation method of narrow graphene nanoribbons | |
| US20110070146A1 (en) | Method of manufacturing graphene, graphene manufactured by the method, conductive film comprising the graphene, transparent electrode comprising the graphene, and radiating or heating device comprising the graphene | |
| CN100375235C (en) | Growth controlling method for preparation of silicon dioxide or silicon nanowire in large area | |
| CN106757361A (en) | MoS is grown based on CVD2The method of two dimensional crystal | |
| CN101117208A (en) | Method for preparation of one-dimensional silicon nanostructure | |
| CN103681356A (en) | Method for manufacturing FinFET by using carbon nano tube as mask | |
| CN107539976A (en) | A kind of method that carbon dioxide prepares ultra-clean graphene | |
| CN106159000A (en) | A kind of prepare the method for uniform monolayers molybdenum sulfide under centimeter scale | |
| CN106756871B (en) | A kind of Transition-metal dichalcogenide two-dimensional material-graphene heterojunction structure and its growth in situ method | |
| CN109650330A (en) | It is the preparation method that template realizes large-area graphene nano-band array based on programmable nano wire | |
| US20100006820A1 (en) | Silica nanowire comprising silicon nanodots and method of preparing the same | |
| WO2012116477A1 (en) | Preparation method of high density zinc oxide nanometer granules | |
| CN110010449B (en) | Method for efficiently preparing one-dimensional carbon nanotube/two-dimensional transition metal chalcogenide heterojunction | |
| CN101104509A (en) | Method for preparing single nano material in pore space structure | |
| CN104401936B (en) | A kind of method at substrate level direction controllable growth carbon nano-tube bundle | |
| CN104743507B (en) | A kind of method in micro element surface regionality growth of zinc oxide nano linear array | |
| CN108394857A (en) | A kind of preparation method of nucleocapsid GaN nano wire array | |
| CN108910868B (en) | Method for preparing graphene dendrite on insulating substrate | |
| CN104401935B (en) | A kind of method at substrate level direction controllable growth carbon nano-tube bundle | |
| CN103757693B (en) | A kind of growing method of GaN nano wire | |
| JP2004182537A (en) | Method of forming arranged structure of nanocarbon material | |
| CN103715098B (en) | The method for preparing fin structure as exposure mask using carbon nanotube |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160413 Termination date: 20191219 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |