CN104393488A - Three-wavelength GaN-based semiconductor laser chip structure - Google Patents
Three-wavelength GaN-based semiconductor laser chip structure Download PDFInfo
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- CN104393488A CN104393488A CN201410763909.2A CN201410763909A CN104393488A CN 104393488 A CN104393488 A CN 104393488A CN 201410763909 A CN201410763909 A CN 201410763909A CN 104393488 A CN104393488 A CN 104393488A
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- layer
- epitaxially grown
- semiconductor laser
- chip structure
- laser chip
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Abstract
The invention relates to a three-wavelength GaN-based semiconductor laser chip structure and belongs to the field of laser technology application. The chip structure can emit laser light in three wavelengths in comparison to the traditional chip structure which can only emit the laser light in single wavelength. The three-wavelength GaN-based semiconductor laser chip structure employs a method for repeatedly growing epitaxial layers; after the epitaxial layer grows on a sapphire substrate material, the two epitaxial layers in the same structure but with different ingredients grow accumulatively; the single chip has three active regions with different ingredients simultaneously to become a laser capable of emitting the light in the three different wavelengths simultaneously by methods of photoetching, erosion and the like; electrodes of the light in the three different wavelengths are mutually independent; a current size can be regulated independently. The structure allows the application of the sapphire-based laser to be wider and more flexible.
Description
Technical field
The invention belongs to semiconductor laser and prepare encapsulation technology field, particularly relate to a kind of three-wavelength gallium nitride-base semiconductor laser chip structure.
Background technology
Along with reaching its maturity and the continuous expansion of application of semiconductor laser technique, the range of application of semiconductor laser device has covered optoelectronic numerous areas, becomes the core technology of current photoelectron practical devices.The advantages such as to have volume little due to semiconductor laser device, and quality is light, and the life-span is long, are widely used in military affairs, industry and the field such as civilian.Sapphire is called as one of current classic laser medium, with sapphire be the semiconductor laser device of substrate because its structure is simple, working stability, the advantage such as cheap commercially have very high occupation rate.Because its substrate is made up of non-conducting material sapphire, therefore when growth of device, by methods such as epitaxial growth, etching, diffusion, making electrodes, its P-type electrode and N-type electrode to be placed in same surface, grow into the stepped surfaces structure with difference in height.Traditional preparation method is at process for sapphire-based bottom material growing epitaxial layers, forms the chip structure can only launching single wavelength laser with a P-type electrode and a N-type electrode.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of three-wavelength gallium nitride-base semiconductor laser chip structure, it can launch the laser of three kinds of different wavelengths of light simultaneously, and the electrode of three kinds of wavelength light is separate, can regulate separately size of current control light beam, make the range of application of the laser taking sapphire as substrate wider, more extensively, more flexible.
Three-wavelength gallium nitride-base semiconductor laser chip structure of the present invention, it comprises: Sapphire Substrate, resilient coating, three epitaxially grown layers;
Described Sapphire Substrate is substrate, is covered with resilient coating and three epitaxially grown layers successively;
Described three epitaxially grown layers adopt the mode layer by layer deposition of metallorganic chemical vapor deposition above described Sapphire Substrate;
Wherein, each epitaxially grown layer comprises N face contact electrode layer, protective layer, N bread crumb, N ground roll conducting shell, active area, P face electronic barrier layer, P ground roll conducting shell, P bread crumb, p side electrode contact layer from the bottom up successively;
In the corresponding N-type electrode of N face electrode contact layer grows of each epitaxially grown layer, grow corresponding P-type electrode at the p side electrode contact layer of each epitaxially grown layer;
Described P-type electrode and N-type electrode cover one or more layers metal through the method for photoetching corrosion, evaporation or sputtering on each epitaxially grown layer, and then carry out the low resistance metal of alloying formation.
Further, the epitaxially grown layer of three-wavelength gallium nitride-base semiconductor laser chip structure has three layers, is respectively: gold-tinted epitaxially grown layer, green glow epitaxially grown layer and blue light epitaxially grown layer from resilient coating.
Further, the material of described resilient coating is GaN, and thickness is 0.03 μm.
Further, described Sapphire Substrate is trigonal system, and index of refraction is 1.76-1.77.
Further, the material of described protective layer is In
0.1ga
0.9n, thickness is 0.1 μm.
Further, the material of described P face electronic barrier layer is Al
0.2ga
0.8n, thickness is 0.02 μm.
Further, the material of described N bread crumb and described P bread crumb is Al
0.15ga
0.85n, thickness is 0.4 μm.
Further, the material of described N ground roll conducting shell and described P ground roll conducting shell is GaN, and thickness is 0.1 μm.
Beneficial effect of the present invention is:
The present invention changes same chip can only launch monochromatic restriction, provides three-wavelength gallium nitride-base semiconductor laser chip structure.This structure is by repeated growth epitaxial loayer, namely after growing one deck epitaxial loayer on process for sapphire-based bottom material, the epitaxial loayer of the two-layer same structure different component of accumulation growth again, same chip is made to have the active area of three different components, the method can realize making a slice chip launch the light of three kinds of different wave lengths simultaneously, makes the application of the laser taking sapphire as substrate more wide in range, flexible.
Accompanying drawing explanation
Fig. 1 is three-wavelength gallium nitride-base semiconductor laser chip structural representation of the present invention.
Reference numeral is:
(1) Sapphire Substrate
(2) resilient coating
(3) gold-tinted epitaxially grown layer
(4) green glow epitaxially grown layer
(5) blue light epitaxially grown layer
(6) blue light P-type electrode
(7) blue light N-type electrode
(8) green glow P-type electrode
(9) green glow N-type electrode
(10) gold-tinted P-type electrode
(11) gold-tinted N-type electrode
Gold-tinted epitaxially grown layer:
(301) p side electrode contact layer
(302) P bread crumb
(303) P ground roll conducting shell
(304) P face electronic barrier layer
(305) active area
(306) N ground roll conducting shell
(307) N bread crumb
(308) protective layer
(309) N face contact electrode layer
Green glow epitaxially grown layer:
(401) p side electrode contact layer
(402) P bread crumb
(403) P ground roll conducting shell
(404) P face electronic barrier layer
(405) active area
(406) N ground roll conducting shell
(407) N bread crumb
(408) protective layer
(409) N face contact electrode layer
Blue light epitaxially grown layer:
(501) p side electrode contact layer
(502) P bread crumb
(503) P ground roll conducting shell
(504) P face electronic barrier layer
(505) active area
(506) N ground roll conducting shell
(507) N bread crumb
(508) protective layer
(509) N face contact electrode layer
Embodiment
The present invention can make same chip have the active area of three different components, form three-wavelength gallium nitride-base semiconductor laser chip structure, what realize making a slice chip to launch three kinds of different wave lengths can the light of independent regulation be that example is further described the present invention simultaneously.
As shown in Figure 1, be made up of Sapphire Substrate (1), resilient coating (2), gold-tinted epitaxially grown layer (3), green glow epitaxially grown layer (4), blue light epitaxially grown layer (5), blue light P-type electrode (6), blue light N-type electrode (7), green glow P-type electrode (8), green glow N-type electrode (9), gold-tinted P-type electrode (10), gold-tinted N-type electrode (11).
Described gold-tinted epitaxially grown layer comprises N face contact electrode layer (309), protective layer (308), N bread crumb (307), N ground roll conducting shell (306), active area (305), P face electronic barrier layer (304), P ground roll conducting shell (303), P bread crumb (302), p side electrode contact layer (301).
Described green glow epitaxially grown layer comprises N face contact electrode layer (409), protective layer (408), N bread crumb (407), N ground roll conducting shell (406), active area (405), P face electronic barrier layer (404), P ground roll conducting shell (403), P bread crumb (402), p side electrode contact layer (401).
Described blue light epitaxially grown layer comprises N face contact electrode layer (509), protective layer (508), N bread crumb (507), N ground roll conducting shell (506), active area (505), P face electronic barrier layer (504), P ground roll conducting shell (503), P bread crumb (502), p side electrode contact layer (501).
Described Sapphire Substrate is the substrate of other structures of growth as laser medium, and main component is aluminium oxide (Al
2o
3); Described epitaxially grown layer adopts the method layer by layer deposition of metallorganic chemical vapor deposition to be grown on above Sapphire Substrate; Described P-type electrode and N-type electrode are by photoetching corrosion epitaxially grown layer, then adopt the method for evaporation or sputtering to cover one or more layers metal, carry out the low resistance metal of alloying formation at a proper temperature.From left to right be followed successively by blue light P-type electrode, blue light N-type electrode, green glow P-type electrode, green glow N-type electrode, gold-tinted P-type electrode and gold-tinted N-type electrode.
Described resilient coating (2) is 0.03 μm of thick GaN, need grow under the condition of 550 DEG C.
Described Sapphire Substrate (1) is trigonal system, and index of refraction is 1.76-1.77, is heterogeneous body, without cleavage, is that rift is grown.
Described protective layer (308), protective layer (408) and protective layer (508) are 0.1 μm of thick In
0.1ga
0.9n, as the resilient coating preventing AlGaN film breaks.
Described P face electronic barrier layer (304), P face electronic barrier layer (404) and P face electronic barrier layer (504) are 0.02 μm of thick Al
0.2ga
0.8n, prevents active area InGaN from dissociating when growing P-type material.
Described N bread crumb (307), P bread crumb (302), N bread crumb (407), P bread crumb (402), N bread crumb (507), P bread crumb (502) are 0.4 μm of thick Al
0.15ga
0.85n, adulterate in n type material Si, doped with Mg in P-type material, mainly with the light being restricted active area quantum well layer and sending.
And all N bread crumbs in this patent include 1*10
17-2*10
19individual Si ion/m
3, all P bread crumbs include 1*10
17-2*10
19individual Mg ion/m
3.
Described N ground roll conducting shell (306), P ground roll conducting shell (303), N ground roll conducting shell (406), P ground roll conducting shell (403), N ground roll conducting shell (506), P ground roll conducting shell (503) are the GaN of 0.1 μm, adulterate in n type material Si, doped with Mg in P-type material, is mainly used as Limited Current.
And N ground roll conducting shell includes 1*10
17-2*10
19individual Si ion/m
3, P ground roll conducting shell includes 1*10
17-2*10
19individual Mg ion/m
3.
The present invention is based on sapphire is the surface type semiconductor device of substrate; choose suitable sapphire substrates; sapphire substrates adopts the method layer by layer deposition material of metallorganic chemical vapor deposition; first formed and launch the epitaxial loayer of gold-tinted, be i.e. grown buffer layer (0.03 μm thick GaN), substrate layer (the N-type GaN of 3 μm of thick doping Si), protective layer (the N-type In of 0.1 μm of thick doping Si successively
0.1ga
0.9n), N bread crumb (the N-type Al of 0.4 μm of thick doping Si
0.15ga
0.85n), N ground roll conducting shell (the N-type GaN of 0.1 μm of thick doping Si), active area (0.0025 μm of thick In
0.32gaN), electronic barrier layer (the P type Al of 0.02 μm of thick doped with Mg
0.2ga
0.8n), P ground roll conducting shell (the P type GaN of 0.1 μm of thick doped with Mg), P bread crumb (the P type Al of 0.4 μm of thick doped with Mg
0.15ga
0.85n), contact electrode layer (the P type GaN of 0.5 μm of thick doped with Mg), the active area in this part-structure is launch the In of gold-tinted
0.32gaN material.
The epitaxial loayer of repeated growth transmitting green light on the contact electrode layer of gold-tinted epitaxially grown layer, i.e. substrate layer (the N-type GaN of 3 μm of thick doping Si), protective layer (the N-type In of 0.1 μm of thick doping Si
0.1ga
0.9n), N bread crumb (the N-type Al of 0.4 μm of thick doping Si
0.15ga
0.85n), N ground roll conducting shell (the N-type GaN of 0.1 μm of thick doping Si), active area (0.0025 μm of thick In
0.3gaN), electronic barrier layer (the P type Al of 0.02 μm of thick doped with Mg
0.2ga
0.8n), P ground roll conducting shell (the P type GaN of 0.1 μm of thick doped with Mg), P bread crumb (the P type Al of 0.4 μm of thick doped with Mg
0.15ga
0.85n), contact electrode layer (the P type GaN of 0.5 μm of thick doped with Mg), the active area in this part-structure is the In of transmitting green light
0.3gaN material.
On the contact electrode layer of green glow epitaxially grown layer, repeated growth launches the epitaxial loayer of blue light, i.e. substrate layer (the N-type GaN of 3 μm of thick doping Si), protective layer (the N-type In of 0.1 μm of thick doping Si
0.1ga
0.9n), N bread crumb (the N-type Al of 0.4 μm of thick doping Si
0.15ga
0.85n), N ground roll conducting shell (the N-type GaN of 0.1 μm of thick doping Si), active area (0.0025 μm of thick In
0.18gaN), electronic barrier layer (the P type Al of 0.02 μm of thick doped with Mg
0.2ga
0.8n), P ground roll conducting shell (the P type GaN of 0.1 μm of thick doped with Mg), P bread crumb (the P type Al of 0.4 μm of thick doped with Mg
0.15ga
0.85n), contact electrode layer (the P type GaN of 0.5 μm of thick doped with Mg), the active area in this part-structure is launch the In of blue light
0.18gaN material.
In etching process, first photoresist is applied to the position of blue light P-type electrode, the method for employing chemical corrosion removes the excess stock more than except all the other position blue light substrate layers; Photoresist is applied to the position of blue light N-type electrode, the method for employing chemical corrosion removes the excess stock more than except all the other position green glow contact electrode layers again; Same method erodes away the stepped surfaces structure with six electrodes successively, removes photoresist subsequently.The method of evaporation or sputtering is adopted to cover one or more layers metal or alloy on three groups of N faces and P face, then alloying is carried out at a proper temperature, form the metal of low-resistance, make it formation three groups of P-type electrode and N-type electrode, from left to right be followed successively by blue light P-type electrode, blue light N-type electrode, green glow P-type electrode, green glow N-type electrode, gold-tinted P-type electrode and gold-tinted N-type electrode.The method of region PVD is except for the electrodes covered SiN/SiO
2insulating material.So just define the stepped surfaces structure (as Fig. 1) of three groups of P-type electrode and N electrode.Because three groups of electrodes are independent of one another, therefore Current Control can be added to three road light beams separately.This structure make the range of application of the laser taking sapphire as substrate wider, more extensively, more flexible.
Only as described above, be only preferred embodiment of the present invention, such as professional who are familiar with this art.After understanding technological means of the present invention, natural energy, according to actual needs, is changed under the teachings of the present invention.Therefore all equal changes of doing according to the present patent application the scope of the claims and modification, all should still remain within the scope of the patent.
Claims (8)
1. a three-wavelength gallium nitride-base semiconductor laser chip structure, is characterized in that, comprising: Sapphire Substrate, resilient coating, three epitaxially grown layers;
Described Sapphire Substrate is substrate, is covered with resilient coating and three epitaxially grown layers successively;
Described three epitaxially grown layers adopt the mode layer by layer deposition of metallorganic chemical vapor deposition above described Sapphire Substrate;
Wherein, each epitaxially grown layer comprises N face contact electrode layer, protective layer, N bread crumb, N ground roll conducting shell, active area, P face electronic barrier layer, P ground roll conducting shell, P bread crumb, p side electrode contact layer from the bottom up successively;
In the corresponding N-type electrode of N face electrode contact layer grows of each epitaxially grown layer, grow corresponding P-type electrode at the p side electrode contact layer of each epitaxially grown layer;
Described P-type electrode and N-type electrode cover one or more layers metal through the method for photoetching corrosion, evaporation or sputtering on each epitaxially grown layer, and then carry out the low resistance metal of alloying formation.
2. three-wavelength gallium nitride-base semiconductor laser chip structure as claimed in claim 1, is characterized in that,
The epitaxially grown layer of three-wavelength gallium nitride-base semiconductor laser chip structure has three layers, is respectively: gold-tinted epitaxially grown layer, green glow epitaxially grown layer and blue light epitaxially grown layer from resilient coating.
3. three-wavelength gallium nitride-base semiconductor laser chip structure as claimed in claim 1, is characterized in that,
The material of described resilient coating is GaN, and thickness is 0.03 μm.
4. three-wavelength gallium nitride-base semiconductor laser chip structure as claimed in claim 1, is characterized in that,
Described Sapphire Substrate is trigonal system, and index of refraction is 1.76-1.77.
5. three-wavelength gallium nitride-base semiconductor laser chip structure as claimed in claim 1, is characterized in that,
The material of described protective layer is In
0.1ga
0.9n, thickness is 0.1 μm.
6. three-wavelength gallium nitride-base semiconductor laser chip structure as claimed in claim 1, is characterized in that,
The material of described P face electronic barrier layer is Al
0.2ga
0.8n, thickness is 0.02 μm.
7. three-wavelength gallium nitride-base semiconductor laser chip structure as claimed in claim 1, is characterized in that,
The material of described N bread crumb and described P bread crumb is Al
0.15ga
0.85n, thickness is 0.4 μm.
8. three-wavelength gallium nitride-base semiconductor laser chip structure as claimed in claim 1, is characterized in that,
The material of described N ground roll conducting shell and described P ground roll conducting shell is GaN, and thickness is 0.1 μm.
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-
2014
- 2014-12-11 CN CN201410763909.2A patent/CN104393488A/en active Pending
Patent Citations (5)
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|---|---|---|---|---|
| US6282220B1 (en) * | 1998-01-07 | 2001-08-28 | Xerox Corporation | Red, infrared, and blue stacked laser diode array by water fusion |
| WO2001037351A1 (en) * | 1999-11-19 | 2001-05-25 | Cree Lighting Company | Multi color solid state led/laser |
| CN1354528A (en) * | 2000-11-16 | 2002-06-19 | 中国科学院半导体研究所 | Self-passinvating non-planar junction subgroup III nitride semi-conductor device and its making method |
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Application publication date: 20150304 |