CN104393132A - Green-light LED (Light Emitting Diode) epitaxial layer structure and growing method - Google Patents
Green-light LED (Light Emitting Diode) epitaxial layer structure and growing method Download PDFInfo
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- CN104393132A CN104393132A CN201410636516.5A CN201410636516A CN104393132A CN 104393132 A CN104393132 A CN 104393132A CN 201410636516 A CN201410636516 A CN 201410636516A CN 104393132 A CN104393132 A CN 104393132A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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Abstract
The invention discloses a green-light LED (Light Emitting Diode) epitaxial layer structure and a growing method. The green-light LED epitaxial layer structure comprises a substrate which is made of sapphire, silicon, silicon carbide, gallium nitride or gallium arsenide, a gallium nitride buffer layer which grows on the substrate, a non-doping gallium nitride layer which grows on the gallium nitride buffer layer, an N type gallium nitride buffer layer which grows on the non-doping gallium nitride layer, a multi-quantum-well area which grows on the N type gallium nitride layer, a P type aluminum gallium nitride layer which grows on the multi-quantum-well area, a P type gallium nitride layer which grows on the P type aluminum gallium nitride layer and a P type gallium nitride layer which grows on the P type gallium nitride layer. The green-light LED epitaxial layer structure achieves improvement of the LED luminous efficiency by improving the hole injection efficiency in a MQW (Multiple Quantum Well) and reducing the QCSE effect in an indium gallium nitride quantum well.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly a kind of green light LED epitaxial layer structure and growing method, it may be used for the making of semiconductor photoelectric device.
Background technology
GaN base green light LED (LED) is widely used in showing a kind of semiconducting solid luminescent device with lighting field at present, and the core of its epitaxial structure is InGaN/GaN Multiple Quantum Well (MQW) layer.The height of LED luminous efficiency depends primarily on structure and the quality of mqw layer, and optimizes MQW structure, and improving MQW quality of materials is the fundamental way obtaining high brightness green light LED device.
In traditional GaN base green light LED, be all adopt the InGaN/GaN mqw layer of simple structure as active area, be characterized in adopting GaN material as barrier layer limiting carrier.This structure quantum well structure is simple, but does not distinguish the restriction in electronics and hole, and there is stronger quantum confined Stark effect (QCSE) in trap.Because in GaN material, the mobility in hole is lower, and the potential well of green glow InGaN quantum well is comparatively dark, thus causes very easily being deposited in the quantum well of p type island region by p type island region injected holes.And hole concentration is lower in the trap of N-type region, luminescence is more weak.The inhomogeneities of this hole concentration distribution, causes the uneven of multiquantum well region luminescence, actually reduces the luminous efficiency of LED component.In addition, in order to realize the green emission of quantum-well materials, the In content in InGaN well layer is higher, cause InGaN trap and GaN build between misfit strain increase.Correspondingly, increasing of interfacial polarization electric charge, makes polarized electric field in trap strengthen.The QCSE effect of the enhancing caused thus, will significantly reduce the green luminescence efficiency of material.Although reduce barrier height (building as adopted single InGaN) effectively can improve hole injection efficiency, and suppress QCSE effect, but owing to reducing the barrier effect of potential barrier to electronics simultaneously, add the leakage of electronics, reduce the injection efficiency of electronics, also can cause weakening of LED luminous intensity.
For this reason, when ensureing electron injection efficiency, improving the injection efficiency in MQW structure hollow cave, reducing the QCSE effect in quantum well simultaneously, will the luminous efficiency significantly improving green light LED be contributed to.
Summary of the invention
The present invention proposes a kind of green light LED epitaxial layer structure and growing method.The QCSE effect that its object is to the injection efficiency by improving hole in MQW and reduce in InGaN quantum well, realizes the lifting of green LED efficiency.
The invention provides a kind of green light LED epitaxial layer structure, comprising:
One substrate, the material of this substrate is sapphire, silicon, carborundum, gallium nitride or GaAs;
One GaN resilient coating, its growth is on substrate;
One undoped GaN layer, its growth is on GaN resilient coating;
One N-type GaN layer, its growth is in undoped GaN layer;
One multiquantum well region, its growth is in N-type GaN layer;
One P type AlGaN layer, its growth is on multiquantum well region;
One P type GaN layer, its growth is in P type AlGaN layer;
One P type GaN cap rock, its growth is in P type GaN layer.
The present invention also provides a kind of green light LED outer layer growth method, comprises the following steps:
Step 1: get a substrate, the material of this substrate is sapphire, silicon, carborundum, gallium nitride or GaAs;
Step 2: growing GaN resilient coating, undoped GaN layer, N-type GaN layer, multiquantum well region, P type AlGaN layer, P type GaN layer, P type GaN cap rock successively over the substrate, completes growth.
The present invention has following beneficial effect:
1, the one-sided stairstepping InGaN barrier structure that the present invention proposes reduces the effective restriction of potential barrier to injected hole, but does not affect potential barrier to the barrier effect injecting electronics.Thus when not affecting electron injection efficiency, improve the injection efficiency in hole, make the distribution in hole in MQW more even, improve the luminous efficiency of the quantum well near side, N district.
2, in barrier layer, the content of In successively increases progressively with stepped-style, and in afterbody step, in In content and quantum well, In content is closest, thus reduces the piezoelectric polarization effect of trap/interface, base.Correspondingly, reduce the polarized electric field intensity in trap, namely reduce QCSE effect, improve the luminous efficiency of single trap.
3, by increasing the number of steps in barrier layer, and optimizing difference in height between each step, the injection efficiency in hole can be improved further, reduce QCSE effect, obtain the green light LED device of high brightness.
Accompanying drawing explanation
For making object of the present invention, technical scheme and beneficial effect clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail, wherein:
Fig. 1 is LED epitaxial layer structure schematic diagram in the present invention.
Fig. 2 is the structural representation of stairstepping InGaN barrier layer in the present invention.
Fig. 3 is LED epitaxial material preparation method flow chart in the present invention.
Fig. 4 be in the embodiment of the present invention multiquantum well region can be with schematic diagram.
Embodiment
A kind of green light LED epitaxial layer structure provided by the invention, refers to shown in Fig. 1, comprising:
One substrate 11, the material of this substrate 11 is sapphire, silicon, carborundum, gallium nitride or GaAs;
One GaN resilient coating 12, its growth is on the substrate 11;
One undoped GaN layer 13, its growth is on GaN resilient coating 12;
One N-type GaN layer 14, its growth is in undoped GaN layer 13.This N-type GaN layer 14 thickness is 1-3 μm, and wherein the doping content of Si is greater than 10
18/ cm
3;
One multiquantum well region 15, its growth is in N-type GaN layer 14.
One P type AlGaN layer 16, its growth is on multiquantum well region 15.This layer thickness is that 30-50nm, Al content 5%-10%, P type Mg doping content is greater than 10
18/ cm
3;
One P type GaN layer 17, its growth is in P type AlGaN layer 16, and this layer thickness is that 100200nm, P type Mg doping content is greater than 10
18/ cm
3;
One P type GaN cap rock 18, its growth is in P type GaN layer 17, and this layer thickness 20-50nm, P type Mg doping content is greater than 10
19/ cm
3.
Wherein, described multiquantum well region 15 is made up of the InGaN well layer 19 of multiple periodic arrangement and stairstepping InGaN barrier layer 20, refers to shown in Fig. 2.In described InGaN well layer 19, In content is 15%-50%, and well layer thickness is 2-5nm.The structure of described stairstepping InGaN barrier layer 20, comprising:
One GaN barrier layer 21, its growth is in InGaN well layer 19;
The sub-barrier layer 22 of one the one InGaN, its growth is in GaN barrier layer 21;
The sub-barrier layer 23 of one the 2nd InGaN, its growth is in the sub-barrier layer 22 of an InGaN, and its In content is higher than the In content in the sub-barrier layer 22 of an InGaN;
The sub-barrier layer 24 of one the 3rd InGaN, its growth is in the sub-barrier layer 23 of the 2nd InGaN, and its In content is higher than the In content in the sub-barrier layer 23 of the 2nd InGaN;
Repeat the sub-barrier layer of above-mentioned multiple InGaN successively, and ensure that the In content in the sub-barrier layer of InGaN successively increases progressively.In content minimum value in each sub-barrier layer is 1%, and maximum is no more than the In content in InGaN well layer 19.In content difference between each sub-barrier layer is minimum is 1%;
In the sub-barrier layer of last InGaN of described stairstepping InGaN barrier layer 20, the content of In is less than the In content in InGaN well layer 19;
The gross thickness of described stairstepping InGaN barrier layer 20 is not less than 10nm, and the thickness of every sub-barrier layer is wherein 3-5nm;
The periodicity of described multiquantum well region 15 and the sub-barrier layer number of stairstepping InGaN barrier layer 20 are at least greater than 2, suitably can increase periodicity and sub-barrier layer number according to actual needs.
Present invention also offers a kind of green light LED outer layer growth method, refer to shown in Fig. 3, comprise the following steps:
Step 1: get a substrate 11, the material of this substrate 11 is sapphire, silicon, carborundum, gallium nitride or GaAs.Described substrate 11 is carried out high-temperature cleaning process 5-20min in the hydrogen atmosphere of 1000-1200 DEG C, then carries out nitrogen treatment.
Step 2: growing GaN resilient coating 12 (growth temperature 450-650 DEG C successively on this substrate 11, growth thickness is 20-30nm), undoped GaN layer 13 (growth temperature 1000-1200 DEG C, thickness is 0.5-2.0 μm), N-type GaN layer 14 (growth temperature 1000-1200 DEG C, thickness is that 1-3 μm, Si doping content is greater than 10
18/ cm
3), multiquantum well region 15, (growth temperature 900-1100 DEG C, thickness is that 30-50nm, Al content 5%-10%, P type Mg doping content is greater than 10 to P type AlGaN layer 16
18/ cm
3), (growth temperature 850-1050 DEG C, thickness is that 100-200nm, P type Mg doping content is greater than 10 to P type GaN layer 17
18/ cm
3), (growth temperature 850-1050 DEG C, thickness is that 20-50nm, P type Mg doping content is greater than 10 to P type GaN cap rock 18
19/ cm
3), subsequently, the temperature of reative cell is down to less than 800 DEG C, at nitrogen atmosphere annealing 10-20min, then is down to room temperature, completes growth.
Wherein, the InGaN well layer 19 (growth temperature 650-850 DEG C, thickness is 2-5nm, In content is 15%-50%) that described multiquantum well region 15 was arranged by the multicycle of repeated growth and stairstepping InGaN barrier layer 20 are formed.
The growth step of described stairstepping InGaN barrier layer 20, comprising:
The sub-barrier layer 21, growth temperature 850-1050 DEG C, thickness 3-5nm of growing GaN in InGaN well layer 19;
GaN barrier layer 21 grows the sub-barrier layer 22, growth temperature 850-1050 DEG C of an InGaN, thickness 3-5nm, In content 1%-5%;
The sub-barrier layer of an InGaN 22 grows the sub-barrier layer 23, growth temperature 850-1050 DEG C of the 2nd InGaN, thickness 3-5nm, In content 5%-10%;
The sub-barrier layer 24, growth temperature 850-1050 DEG C of growth regulation three InGaN in the sub-barrier layer of the 2nd InGaN 23, thickness 3-5nm, In content 10%-15%;
Repeat the sub-barrier layer of above-mentioned multiple InGaN successively, and ensure that the In content in the sub-barrier layer of InGaN successively increases progressively.In content minimum value in each sub-barrier layer is 1%, and maximum is no more than the In content in InGaN well layer 19.In content difference between each sub-barrier layer is minimum is 1%.In stairstepping InGaN barrier layer 20, the In content of the sub-barrier layer of last InGaN is less than the In content in InGaN well layer 19.
The periodicity of multiquantum well region 15 and the sub-barrier layer number of stairstepping InGaN barrier layer 20 of growth are at least greater than 2, suitably can increase periodicity and sub-barrier layer number according to actual needs.
The present embodiment is with high-purity hydrogen (H
2) or nitrogen (N
2) as carrier gas, with trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and ammonia (NH
3) respectively as Ga, Al, In and N source, with silane (SiH
4) and two luxuriant magnesium (CP
2mg) respectively as N, P-type dopant.
What adopt the multiquantum well region 15 of the present embodiment acquisition can be with schematic diagram, as shown in Figure 4.Wherein the direction of arrow is Material growth direction, and left side N-type region represents N-type GaN layer 14, and p type island region, right side represents P type AlGaN layer 16, and zone line represents the multiquantum well region 15 be made up of the InGaN well layer 19 of multiple cycle repeated arrangement and stairstepping InGaN barrier layer 20.When LED forward bias, a large amount of electronics injects multiquantum well region by N-type region along Material growth direction.Because the barrier height of the party's upwards conduction band electron is constant, the injection of electronics is not affected; Meanwhile, a large amount of hole injects multiquantum well region by p type island region against Material growth direction.Due to the party upwards valence band hole barrier height from low to high in stairstepping change, make hole more easily utilize these steps to cross whole barrier layer, enter next well layer, namely reduce the restriction of barrier layer to hole.Thus improve the injection efficiency in hole, hole concentration in the quantum well layer of N-type region side is increased, and luminous intensity increases.In addition, owing to being mixed with In in barrier layer, reduce the average lattice mismatch between barrier layer and well layer, thus reduce the QCSE effect in trap, improve the luminous efficiency in single quantum well layer.
It should be noted that, the foregoing is only specific embodiments of the invention, be not limited to the present invention.Within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all belong to the scope of protection of present invention.
Claims (10)
1. a green light LED epitaxial layer structure, comprising:
One substrate, the material of this substrate is sapphire, silicon, carborundum, gallium nitride or GaAs;
One GaN resilient coating, its growth is on substrate;
One undoped GaN layer, its growth is on GaN resilient coating;
One N-type GaN layer, its growth is in undoped GaN layer;
One multiquantum well region, its growth is in N-type GaN layer;
One P type AlGaN layer, its growth is on multiquantum well region;
One P type GaN layer, its growth is in P type AlGaN layer;
One P type GaN cap rock, its growth is in P type GaN layer.
2. green light LED epitaxial layer structure according to claim 1, wherein multiquantum well region is made up of the InGaN well layer of multiple periodic arrangement and stairstepping InGaN barrier layer.
3. green light LED epitaxial layer structure according to claim 1, the wherein structure of stairstepping InGaN barrier layer, comprising:
One GaN barrier layer, its growth is in InGaN well layer;
The sub-barrier layer of one the one InGaN, its growth is in GaN barrier layer;
The sub-barrier layer of one the 2nd InGaN, its growth is in the sub-barrier layer of an InGaN, and its In content is higher than the In content in the sub-barrier layer of an InGaN;
The sub-barrier layer of one the 3rd InGaN, its growth is in the sub-barrier layer of the 2nd InGaN, and its In content is higher than the In content in the sub-barrier layer of the 2nd InGaN;
Repeat the sub-barrier layer of above-mentioned multiple InCaN successively, and ensure that the In content in the sub-barrier layer of InGaN successively increases progressively.
4. green light LED epitaxial layer structure according to claim 1, in the sub-barrier layer of last InGaN of wherein stairstepping InGaN barrier layer, the content of In is less than the In content in InGaN well layer.
5. green light LED epitaxial layer structure according to claim 1, wherein the periodicity of multiquantum well region and the sub-barrier layer number of stairstepping InGaN barrier layer are at least greater than 2.
6. a green light LED outer layer growth method, comprises the following steps:
Step 1: get a substrate, the material of this substrate is sapphire, silicon, carborundum, gallium nitride or GaAs;
Step 2: growing GaN resilient coating, undoped GaN layer, N-type GaN layer, multiquantum well region, P type AlGaN layer, P type GaN layer, P type GaN cap rock successively over the substrate, completes growth.
7. green light LED outer layer growth method according to claim 6, wherein multiquantum well region is made up of the InGaN well layer of multiple periodic arrangement and stairstepping InGaN barrier layer.
8. green light LED outer layer growth method according to claim 6, the wherein structure of stairstepping InGaN barrier layer, comprising:
One GaN barrier layer, its growth is in InGaN well layer;
The sub-barrier layer of one the one InGaN, its growth is in GaN barrier layer;
The sub-barrier layer of one the 2nd InGaN, its growth is in the sub-barrier layer of an InGaN, and its In content is higher than the In content in the sub-barrier layer of an InGaN;
The sub-barrier layer of one the 3rd InGaN, its growth is in the sub-barrier layer of the 2nd InGaN, and its In content is higher than the In content in the sub-barrier layer of the 2nd InGaN;
Repeat the sub-barrier layer of above-mentioned multiple InGaN successively, and ensure that the In content in the sub-barrier layer of InGaN successively increases progressively.
9. green light LED outer layer growth method according to claim 6, in the sub-barrier layer of last InGaN of wherein stairstepping InGaN barrier layer, the content of In is less than the In content in InGaN well layer.
10. green light LED outer layer growth method according to claim 6, wherein the periodicity of multiquantum well region and the sub-barrier layer number of stairstepping InGaN barrier layer are at least greater than 2.
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| CN105047772A (en) * | 2015-06-08 | 2015-11-11 | 中国科学院半导体研究所 | Structure of green-light LED chip epitaxial layer, and growth method |
| CN105977351A (en) * | 2016-05-26 | 2016-09-28 | 合肥彩虹蓝光科技有限公司 | Growing method of ultraviolet LED active area multiple quantum well |
| CN108140698A (en) * | 2015-10-22 | 2018-06-08 | 优志旺电机株式会社 | Nitride semiconductor photogenerator |
| CN114038972A (en) * | 2022-01-10 | 2022-02-11 | 江西兆驰半导体有限公司 | LED epitaxial wafer, epitaxial growth method and LED chip |
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| CN114038972A (en) * | 2022-01-10 | 2022-02-11 | 江西兆驰半导体有限公司 | LED epitaxial wafer, epitaxial growth method and LED chip |
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| CN104393132B (en) | 2017-06-06 |
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