CN104392994B - Dual-core GCT of corrugated base regions and transparent short circuit anodes and preparation method thereof - Google Patents
Dual-core GCT of corrugated base regions and transparent short circuit anodes and preparation method thereof Download PDFInfo
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- CN104392994B CN104392994B CN201410605143.5A CN201410605143A CN104392994B CN 104392994 B CN104392994 B CN 104392994B CN 201410605143 A CN201410605143 A CN 201410605143A CN 104392994 B CN104392994 B CN 104392994B
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Abstract
The invention discloses a dual-core GCT of corrugated base regions and transparent short circuit anodes. GCT-A and GCT-B parts are identical in upward arrangement in an n-region. The n-region of the GCT-B part is downwardly provided with an n field stop layer. A p+ transparent anode region I, an n+ short circuit region and a p+ transparent anode region II are arranged side by side below the n field stop layer. Thickness of the p+ transparent anode region I and the p+ transparent anode region II is less than that of the middle n+ short circuit region. The p+ transparent anode region I is adjacent to the p+ transparent anode region of the GCT-A. A common anode aluminum electrode A is arranged below the p+ transparent anode region I, the n+ short circuit region and the p+ transparent anode region II and below the p+ transparent anode region of the GCT-A part. The invention also discloses a preparation method for the D-GCT. According to the dual-core GCT structure of the corrugated base regions and the transparent short circuit anodes, current capacity of the GCT is enhanced, total loss is reduced and control of minority carrier lifetime is eliminated.
Description
Technical field
The invention belongs to power semiconductor device technical field, it is related to a kind of wavy base and the twin-core of transparent short circuit anode
GCT, the invention still further relates to the preparation method of the twin-core GCT of this kind of wavy base and transparent short circuit anode.
Background technology
Door pole stream-exchanging thyristor (GCT) is a kind of new power semiconductor device, and it is in gate level turn-off thyristor
(GTO) develop on the basis of and come.Twin-core GCT is D-GCT (device) is by two asymmetric GCT with different qualities simultaneously
Join integrated on the same chip, one (as GCT-A) be responsible for control D-GCT on-state characteristic, another (as GCT-B) bear
Duty controls the turn-off characteristic of D-GCT, makes D-GCT have very low conduction loss and turn-off power loss simultaneously.Therefore, can expire well
The fast-developing Large Copacity that novel power semiconductor device is proposed of sufficient Power Electronic Technique, low-loss, high reliability and integrated
Change etc. requires, and has wide practical use.
Existing D-GCT adopts common p base, employs trench isolations between two GCT.Although trench isolations can be kept away
Exempt from the main curvature effect blocking knot so that blocking voltage is improved, but in order to reach preferable isolation effect, it usually needs relatively
Wide groove, this can lead to door-negative electrode (J3) reverse leakage current tied is very big, the chip area that groove takies simultaneously is also larger,
So that the effective area of device is reduced, be unfavorable for surface radiating.Additionally, in order to improve the turn-off speed of D-GCT it is necessary to adopt few son
Lifetime control techniques are improving the turn-off characteristic of GCT-B part, but can not affect the minority carrier life time of GCT-A part.Because above-mentioned
These reasons all make the exploitation of existing D-GCT be restricted.
Content of the invention
It is an object of the invention to provide the twin-core GCT of a kind of wavy base and transparent short circuit anode, solve prior art
Middle groove setting is difficult, and the minority carrier life time control to GCT has high demands, the big problem of processing technology difficulty.
It is a further object of the present invention to provide a kind of preparation side of the twin-core GCT of above-mentioned wavy base and transparent short circuit anode
Method.
The technical solution adopted in the present invention is, the twin-core GCT of a kind of wavy base and transparent short circuit anode, whole device
With n- area as substrate, with above device, device is divided into GCT-A part and GCT-B part for axle by the centrage of isolated groove,
The structure of described GCT-A part is, including the n- area positioned at main body, n- area has set up wavy p- base, ripple
Shape p- is provided with p+ base above base；This p+ base interlude upper surface and the crest correspondence position of wavy p- base are provided with
N+ cathode chamber, this n+ cathode chamber upper surface is negative electrode aluminium electrode K；The p+ base upper surface of this n+ cathode chamber both sides is each provided with one
Individual gate pole aluminium electrode G1；N- area is down-set n field stop layer, and n field stop layer is downwards p+ transparent anode area；
Described GCT-B part-structure is equally to include the n- area positioned at main body, and n- area has set up wavy p- base
Area, is provided with p+ base above wavy p- base；This p+ base interlude upper surface and the crest correspondence position of wavy p- base
It is provided with n+ cathode chamber, this n+ cathode chamber upper surface is negative electrode aluminium electrode K；The p+ base upper surface of this n+ cathode chamber both sides respectively sets
It is equipped with gate pole aluminium electrode G2；N- area is down-set n field stop layer, and the lower section of n field stop layer has been arranged side by side GCT-B portion
The p+ transparent anode area II in the p+ transparent anode area I, n+ shorting region and GCT-B part that divide, the p+ transparent anode area of GCT-B part
The thickness in I and p+ transparent anode area II is less than middle n+ shorting region, the p+ transparent anode area I of GCT-B part and the p+ of GCT-A
Transparent anode area adjoins, the p+ transparent anode area II in the p+ transparent anode area I, n+ shorting region and GCT-B part of GCT-B part
Lower section is all provided with common anode aluminium electrode A with the lower section in the p+ transparent anode area of GCT-A part；
Described isolated groove stretches into p+ base, connects with a crest of p- base.
Another technical scheme of the present invention is, a kind of system of the twin-core GCT of wavy base and transparent short circuit anode
Preparation Method, is embodied as according to following steps：
Step 1, from original high resistance zone-melting according to silicon single crystal as n- area；
Step 2, Wafer Cleaning post-etching are thinning, realize the n of the upper and lower surface in n- area using the diffusion of phosphorus oxychloride source two step
Area, and grind off the n area of n- area upper surface；
Step 3, formed using dry oxygen-wet oxygen-dry oxygen alternating oxidation and shelter film, carry out in the n- area upper surface grinding off n area
Photoetching, forms boron diffusion window；Then carry out boron selective diffusion using the diboron trioxide source of saturation, form p+ base, and
Remove the oxide layer on whole device surface；
Step 4, re-form and shelter film using dry oxygen-wet oxygen-dry oxygen alternating oxidation, under p+ base upper surface and n area
Photoetching simultaneously on the surface, forms phosphorus diffusion window, then carries out selective phosphorus two step diffusion, in p+ base upper surface stage casing shape
Become the n+ cathode diffusion region of GCT-A and GCT-B, formation n+ shelters diffusion region at the isolation of p+ base simultaneously；In addition, simultaneously in n
The n+ shorting region of GCT-B is formed on area's lower surface, then removes the oxide layer on whole device surface；
Step 5, re-form and shelter film using dry oxygen-wet oxygen-dry oxygen alternating oxidation, the device upper table obtaining in step 4
Face is lithographically formed aluminum diffusion window, then carries out large-area aluminum diffusion under the sheltering of upper surface n+ diffusion region, in n- area
The deeper wavy p base of self-assembling formation and pnp isolation area, then remove the oxide layer on whole device surface；
Step 6, re-form and shelter film using dry oxygen-wet oxygen-dry oxygen alternating oxidation, the device upper table obtaining in step 5
Face is lithographically formed gate pole area and isolation area corrosion window, then carries out gate pole area and isolation area grooving using caustic solution；
Step 7, the device lower surface obtaining in step 6 get rid of the B of dilution2O3Source, carries out Large area coatings diffusion, is formed
The p+ transparent anode area of GCT-A and GCT-B, meanwhile, expansion is also mended in the gate pole area of upper surface, then, removes whole device
Oxide layer on part surface；
Step 8, re-form and shelter film using dry oxygen-wet oxygen-dry oxygen alternating oxidation, the device upper table obtaining in step 7
Face is lithographically formed isolation area corrosion window, then carries out anticaustic, etches away n+ and shelters diffusion region, forms PNP-trench and is combined
Isolation area, then carries out the protection silicon dioxide pattern that next step is lithographically formed GCT-A and GCT-B door-negative electrode circle；
Step 9, the device lower surface hacking that step 8 is obtained, form high complex centre；After cleaning, on whole device,
Lower surface evaporation of aluminum respectively, and sputtered titanium, nickel, silver-colored multiple-layer metallization film, the then aluminium film to upper surface on the aluminium lamination of lower surface
Anti-carved, formed each electrode after alloying；
Step 10, polyimide film is got rid of to the device upper surface that step 9 obtains, be lithographically formed the guarantor of gate pole area and isolation area
Shield figure, and carry out imidization process；Then carry out angle lap protection, surface passivation obtains final product.
Because the D-GCT structure of the present invention employs wavy p base, its p base is by shallow p+ base and deep p- base two
It is grouped into so that isolation area can be combined using PNP-trench between GCT-A and GCT-B；Anode-side in GCT-B increased simultaneously
N+ shorting region.Therefore the invention has the beneficial effects as follows, taken into account the blocking characteristics of D-GCT and on state characteristic and switching characteristic it is ensured that
Its change of current reliability, saves the minority carrier life time for GCT-B part and controls and require, and significantly reduces processing technology difficulty and becomes
This.
Brief description
Fig. 1 is existing D-GCT fundamental profile structure chart；
Fig. 2 is the wavy base of the present invention and the twin-core GCT fundamental profile structural representation of transparent short circuit anode；
Fig. 3 be the present invention D-GCT during turning on built-in potential distribution；
Fig. 4 be the present invention D-GCT turn off the change of current during internal carrier concentration profile；
Fig. 5 is existing D-GCT in the bar state along the longitudinal electric field distribution of cathode center position subdivision；
Fig. 6 is that the D-GCT of the present invention divides along the longitudinal electric field of cathode center and ripple knee subdivision in the bar state
Cloth；
Fig. 7 is that the D-GCT of the present invention characteristic with the forward blocking of existing D-GCT compares；
Fig. 8 is that the D-GCT of the present invention characteristic with the forward conduction of existing D-GCT compares；
Fig. 9 is D-GCT opening process middle-jiao yang, function of the spleen and stomach electrode current and sun-cathode voltage waveform over time of the present invention；
Figure 10 is D-GCT turn off process middle-jiao yang, function of the spleen and stomach electrode current and sun-cathode voltage waveform over time of the present invention.
Specific embodiment
The present invention is described in detail with reference to the accompanying drawings and detailed description.
Fig. 1 is existing D-GCT sectional structure chart, and main body employs common p base, and between GCT-A and GCT-B is
Trench isolations, can be realized by etching technics after large area aluminum diffuses to form p base.In order to ensure that groove do not affect J2Knot consumption
Most area spreads and obtains good isolation effect, the shallow and wide that trench area is done as far as possible, but trench area is too wide, not only results in
J between door-negative electrode3The leakage current of knot sharply increases, and the silicon chip surface simultaneously taking amasss also very greatly, leads to negative electrode effective area to subtract
Little.
Fig. 2 be the present invention D-GCT cross-section structure, whole device with n- area as substrate, with isolated groove above device
Device is divided into GCT-A part and GCT-B part for axle by centrage,
The structure of described GCT-A part is, including the n- area positioned at main body, n- area has set up wavy p- base, ripple
Shape p- is provided with p+ base above base；This p+ base interlude upper surface and the crest correspondence position of wavy p- base are provided with
N+ cathode chamber, this n+ cathode chamber upper surface is negative electrode aluminium electrode K；The p+ base upper surface of this n+ cathode chamber both sides is each provided with one
Individual gate pole aluminium electrode G1；N- area is down-set n field stop layer, and n field stop layer is downwards p+ transparent anode area；
Described GCT-B part-structure is equally to include the n- area positioned at main body, and n- area has set up wavy p- base
Area, is provided with p+ base above wavy p- base；This p+ base interlude upper surface and the crest correspondence position of wavy p- base
It is provided with n+ cathode chamber, this n+ cathode chamber upper surface is negative electrode aluminium electrode K；The p+ base upper surface of this n+ cathode chamber both sides respectively sets
It is equipped with gate pole aluminium electrode G2；N- area is down-set n field stop layer, and the lower section of n field stop layer has been arranged side by side GCT-B portion
The p+ transparent anode area II in the p+ transparent anode area I, n+ shorting region and GCT-B part that divide, the p+ transparent anode area of GCT-B part
The thickness in I and p+ transparent anode area II is less than middle n+ shorting region, the p+ transparent anode area I of GCT-B part and the p+ of GCT-A
Transparent anode area adjoins, the p+ transparent anode area II in the p+ transparent anode area I, n+ shorting region and GCT-B part of GCT-B part
Lower section is all provided with common anode aluminium electrode A with the lower section in the p+ transparent anode area of GCT-A part；
Described isolated groove stretches into p+ base, connects with a crest of p- base.
The dimensional parameters span of control of the D-GCT of the present invention is：
The n+ negative electrode sector width of GCT-A part and GCT-B part is 200 ± 20 μm, and the thickness of p+ base is 30 ± 5 μ
m.
The gate pole area gash depth of GCT-A part and GCT-B part is 25 ± 2 μm.
The n+ short circuit sector width of GCT-B part and the ratio of its p+ anode sector width are 0.25-0.5.
At least 200 μm of the width of pnp isolation area, at least 250 μm of the width of channel separating zone, the depth of channel separating zone
Degree is identical with the thickness of p+ base.
The structure of the present invention employs wavy p base, employs groove-pnp isolation between GCT-A and GCT-B.Wavy
P base be made up of shallow p+ base and deep p- base two parts, wherein shallow p+ base is diffuseed to form by boron, and deep p- base is
The wavy texture being diffuseed to form by large area aluminum under the sheltering in n+ area；The pnp part of groove-pnp isolation area and deep p- base
Area is formed simultaneously, and forms the compound isolation structure of groove-pnp further by etching；Additionally, GCT-B additionally use transparent short
Road anode, increased n+ shorting region in the anode-side of GCT-B, and it is formed with the n+ cathode chamber of GCT-B simultaneously.Adopt wavy simultaneously
P base can significantly improve on state characteristic and the switching characteristic of D-GCT, increases the reverse-biased safety operation area of device.Using transparent
Short-circuit anode can improve the turn-off characteristic of D-GCT, improve the reliability of the D-GCT change of current, also omit to minority carrier life time simultaneously
Control, it is possible to decrease the processing technology difficulty of device and cost.
The operation principle of the D-GCT of the present invention is：
As shown in figure 1, when D-GCT two ends add forward voltage (UAK>0) when, J2Knot reverse-biased undertaking forward blocking voltage,
GCT-A and GCT-B is in blocking state, blocks leakage current and is determined by the relatively low GCT-B of minority carrier life time.When D-GCT opens,
To be triggered using gate pole dipulse.Gate pole G in D-GCT1And G2Add very strong positive current pulses signal simultaneously, GCT-A and
The J of GCT-B3Knot can be uniformly injected into, and makes the large area conducting of negative electrode npn transistor elder generation, then drives anode pnp transistor to lead to,
Form positive feedback between the two, then D-GCT turns on comprehensively.After conducting, the pressure drop at D-GCT positive and negative pole two ends is very low, as Fig. 3 institute
Show, although the current potential at GCT-A with GCT-B two ends is identical during D-GCT conducting, but the current potential of interior point is pressed and differed,
And the current potential of GCT-B is apparently higher than GCT-A, therefore the conducting of D-GCT is mainly determined by the higher GCT-A of minority carrier life time.Work as D-
When GCT turns off, first in the gate pole G of GCT-A1The upper undersuing that Jia very strong, then the J of GCT-A3Knot can end quickly, GCT-
Carrier in A base can move in GCT-B, and internal distribution of electron's density is as shown in Figure 4.Through t time delaysAfterwards,
Again in the gate pole G of GCT-B2The upper undersuing that Jia very strong, then the J of GCT-B3Knot also can end quickly, then GCT-B
Turn off and just press the shutoff of anode pnp transistor.When D-GCT two ends add backward voltage (UAK<0) when, because transparent anode area is relatively thin, therefore
D-GCT does not almost have reverse blocking capability.
As shown in Fig. 2 because the D-GCT of the present invention employs wavy p base, turning off the special of latter stage club's formation
Transverse electric field, can accelerate to extract the carrier of p base in GCT-B；Employ transparent short circuit anode simultaneously, can accelerate to extract
So that D-GCT rapidly switches off, tail currents and its turn-off power loss can be substantially reduced the carrier of n- base.
The preparation method of the twin-core GCT of the wavy base of the present invention and transparent short circuit anode, specifically real according to following steps
Apply：
Step 1, from original high resistance zone-melting according to silicon single crystal as n- area；
Step 2, Wafer Cleaning post-etching are thinning, realize the n of the upper and lower surface in n- area using the diffusion of phosphorus oxychloride source two step
Area, and grind off the n area of n- area upper surface；
Step 3, formed using dry oxygen-wet oxygen-dry oxygen alternating oxidation and shelter film, carry out in the n- area upper surface grinding off n area
Photoetching, forms boron diffusion window；Then carry out boron selective diffusion using the diboron trioxide source of saturation, form p+ base, and
Remove the oxide layer on whole device surface；
Step 4, re-form and shelter film using dry oxygen-wet oxygen-dry oxygen alternating oxidation, under p+ base upper surface and n area
Photoetching simultaneously on the surface, forms phosphorus diffusion window, then carries out selective phosphorus two step diffusion, in p+ base upper surface stage casing shape
Become the n+ cathode diffusion region of GCT-A and GCT-B, formation n+ shelters diffusion region at the isolation of p+ base simultaneously；In addition, simultaneously in n
The n+ shorting region of GCT-B is formed on area's lower surface, then removes the oxide layer on whole device surface；
Step 5, re-form and shelter film using dry oxygen-wet oxygen-dry oxygen alternating oxidation, the device upper table obtaining in step 4
Face is lithographically formed aluminum diffusion window, then carries out large-area aluminum diffusion under the sheltering of upper surface n+ diffusion region, in n- area
The deeper wavy p base of self-assembling formation and pnp isolation area, then remove the oxide layer on whole device surface；
Step 6, re-form and shelter film using dry oxygen-wet oxygen-dry oxygen alternating oxidation, the device upper table obtaining in step 5
Face is lithographically formed gate pole area and isolation area corrosion window, then carries out gate pole area and isolation area grooving using caustic solution；
Step 7, the device lower surface obtaining in step 6 get rid of the B of dilution2O3Source, carries out Large area coatings diffusion, is formed
The p+ transparent anode area of GCT-A and GCT-B, meanwhile, expansion is also mended in the gate pole area of upper surface, then, removes whole device
Oxide layer on part surface；
Step 8, re-form and shelter film using dry oxygen-wet oxygen-dry oxygen alternating oxidation, the device upper table obtaining in step 7
Face is lithographically formed isolation area corrosion window, then carries out anticaustic, etches away n+ and shelters diffusion region, forms PNP-trench and is combined
Isolation area, then carries out the protection silicon dioxide pattern that next step is lithographically formed GCT-A and GCT-B door-negative electrode circle；
Step 9, the device lower surface hacking that step 8 is obtained, form high complex centre；After cleaning, on whole device,
Lower surface evaporation of aluminum respectively, and sputtered titanium, nickel, silver-colored multiple-layer metallization film, the then aluminium film to upper surface on the aluminium lamination of lower surface
Anti-carved, formed each electrode after alloying；
Step 10, polyimide film is got rid of to the device upper surface that step 9 obtains, be lithographically formed the guarantor of gate pole area and isolation area
Shield figure, and carry out imidization process；Then carry out angle lap protection, surface passivation obtains final product.
The evaluating characteristics of the device of the present invention are：
In order to evaluate the characteristic of D-GCT of the present invention, structural model is established according to Fig. 1 taking 5kV D-GCT as a example, utilize
ISE simulation software is emulated respectively to the forward blocking characteristic of D-GCT, on state characteristic and switching characteristic, and with there is phase
Compare with the existing D-GCT of structural parameters.
1) forward blocking characteristic
As gate voltage UGK=0, anode-cathode voltage UAK>When 0, D-GCT is in forward blocking state, by reverse-biased J2
Tie and to undertake forward blocking voltage.Fig. 5 is that existing D-GCT divides along the longitudinal electric field of cathode center position subdivision in the bar state
Cloth simulation curve is it is seen then that its Electric Field Distribution is trapezoidal profile, and peak electric field is located at PN junction interface, and electric field intensity is about
1.48×105V/cm；Fig. 6 is the D-GCT of the present invention in the bar state along the longitudinal electric field distributed simulation of diverse location subdivision
Curve；It can be seen that, it is about 1.75 × 10 along the peak electric field strength at cathode edge5V/cm is hence it is evident that be higher than along at cathode center
Peak electric field strength 1.3 × 105V/cm.Illustrate to form special transverse electric field in D-GCT using wavy p base.
The D-GCT that Fig. 7 gives the present invention characteristic with the forward blocking of existing D-GCT compares.As seen from Figure 7,
Isolation is combined using wavy base and PNP-trench, the forward blocking voltage of D-GCT can be made to decline.But under the high temperature of 420K,
The high-temperature current leakage of the D-GCT of the present invention is significantly lower than existing D-GCT.
2) forward conduction characteristic
As sun-cathode voltage UAK>0, using gate pole hard-drive circuit, so that the electric current that gate pole applies is reached more than the triggering of its gate pole
Electric current, i.e. IG>>IGTWhen, D-GCT is in forward conduction state, by GCT-A and GCT-B common conductive electric current.Fig. 8 gives this
The D-GCT of invention is with existing D-GCT on state characteristic curve ratio relatively；As seen from Figure 8, under identical electric current density, the present invention's
The forward voltage drop of D-GCT is more considerably lower than existing D-GCT, and zero temperature coefficient point is close.
3) switching characteristic
The D-GCT that Fig. 9, Figure 10 are respectively the present invention leads to characteristic comparison with the switch of existing D-GCT.By Fig. 9 institute
The turn-on characteristics showing are visible, under identical trigger condition D-GCT of the present invention open slightly slow than opening of existing D-GCT,
Differ about 0.15 μ s under 300K room temperature, but differ about 0.13 μ s under 420K high temperature.Turn-off characteristic as shown in Figure 10 is visible,
Under identical turn-off criterion, the shutoff than existing D-GCT for the shutoff of D-GCT of the present invention about postpones 2 μ s, but turn-off speed is obvious
Comparatively fast, the tail currents under 420K high temperature are also little, the tail currents under even below 300K, therefore turn-off power loss significantly lowers.
Above-mentioned specificity analysises show, compared with existing D-GCT, the D-GCT of the present invention have relatively low conduction loss and
Turn-off power loss, and using groove-pnp be combined isolation can obtain more preferable isolation effect and larger negative electrode effective area, favorably
In raising current capacity and thermal characteristicss.Therefore, replace existing D-GCT to be expected preferably to be satisfied with greatly with the D-GCT of the present invention
The practical application of power converter.
It can be seen that, the preparation method of the twin-core GCT of the wavy base of the present invention and transparent short circuit anode, with existing D-GCT
Based on, p base is the shallow p+ base being diffuseed to form by boron and carries out aluminum under the n+ cathode diffusion region that phosphorus diffuses to form is sheltered
The deep p- base composition diffuseing to form, and naturally form a kind of wavy p base and pnp isolation area, Bing pnp enters above area
Row grooving, thus define PNP-trench to be combined isolation area.Additionally, the anode-side in GCT-A increased n+ shorting region, and and its
N+ cathode chamber is formed simultaneously, can be effectively improved the turn-off characteristic of D-GCT, thus eliminating the control to its minority carrier life time.
Claims (7)
1. a kind of wavy base and transparent short circuit anode twin-core GCT it is characterised in that：Whole device with n- area as substrate, with
Above device, device is divided into GCT-A part and GCT-B part for axle by the centrage of isolated groove,
The structure of described GCT-A part is, including the n- area positioned at main body, n- area has set up wavy p- base, wavy p-
It is provided with p+ base above base；This p+ base interlude upper surface is provided with n+ the moon with the crest correspondence position of wavy p- base
Polar region, this n+ cathode chamber upper surface is negative electrode aluminium electrode K；The p+ base upper surface of this n+ cathode chamber both sides is each provided with a door
Pole aluminium electrode G1；N- area is down-set n field stop layer, and n field stop layer is downwards p+ transparent anode area；
Described GCT-B part-structure is, including the n- area positioned at main body, n- area has set up wavy p- base, wavy p-
It is provided with p+ base above base；This p+ base interlude upper surface is provided with n+ the moon with the crest correspondence position of wavy p- base
Polar region, this n+ cathode chamber upper surface is negative electrode aluminium electrode K；The p+ base upper surface of this n+ cathode chamber both sides is each provided with a door
Pole aluminium electrode G2；N- area is down-set a n field stop layer, and the p+ that the lower section of n field stop layer is arranged side by side GCT-B part is transparent
The p+ transparent anode area II of anode region I, n+ shorting region and GCT-B part, the p+ transparent anode area I of GCT-B part and p+ are transparent
The thickness of anode region II is less than middle n+ shorting region, the p+ transparent anode area I of GCT-B part and the p+ transparent anode of GCT-A
Area adjoins, the lower section in the p+ transparent anode area II in the p+ transparent anode area I, n+ shorting region and GCT-B part of GCT-B part all with
The lower section in the p+ transparent anode area of GCT-A part is provided with common anode aluminium electrode A；
Described isolated groove stretches into p+ base, connects with a crest of p- base.
2. wavy base according to claim 1 and transparent short circuit anode twin-core GCT it is characterised in that：Described GCT-A
The n+ negative electrode sector width of part and GCT-B part is 200 ± 20 μm, and the thickness of p+ base is 30 ± 5 μm.
3. wavy base according to claim 1 and transparent short circuit anode twin-core GCT it is characterised in that：Described GCT-A
The gate pole area gash depth of part and GCT-B part is 25 ± 2 μm.
4. wavy base according to claim 1 and transparent short circuit anode twin-core GCT it is characterised in that：Described GCT-B
Partial n+ short circuit sector width and the ratio of its p+ anode sector width are 0.25-0.5.
5. wavy base according to claim 1 and transparent short circuit anode twin-core GCT it is characterised in that：Described GCT-B
The p+ transparent anode area II in partial p+ transparent anode area I, n+ shorting region and GCT-B part is collectively referred to as pnp isolation area, should
At least 200 μm of the width of pnp isolation area, at least 250 μm of the width of channel separating zone, the depth of channel separating zone and p+ base
The thickness in area is identical.
6. the preparation method of the twin-core GCT of the wavy base described in a kind of claim 1 and transparent short circuit anode, its feature exists
In being embodied as according to following steps：
Step 1, from original high resistance zone-melting according to silicon single crystal as n- area；
Step 2, Wafer Cleaning post-etching are thinning, realize the n area of the upper and lower surface in n- area using the diffusion of phosphorus oxychloride source two step, and
Grind off the n area of n- area upper surface；
Step 3, formed using dry oxygen-wet oxygen-dry oxygen alternating oxidation and shelter film, carry out photoetching in the n- area upper surface grinding off n area,
Form boron diffusion window；Then carry out boron selective diffusion using the diboron trioxide source of saturation, form p+ base, and remove whole
Oxide layer on individual device surface；
Step 4, re-form and shelter film using dry oxygen-wet oxygen-dry oxygen alternating oxidation, in p+ base upper surface and n area lower surface
On photoetching simultaneously, form phosphorus diffusion window, then carry out the diffusion of selective phosphorus two step, formed in p+ base upper surface stage casing
The n+ cathode diffusion region of GCT-A and GCT-B, simultaneously at the isolation of p+ base formed n+ shelter diffusion region；In addition, simultaneously in n area
The n+ shorting region of GCT-B is formed on lower surface, then removes the oxide layer on whole device surface；
Step 5, re-form and shelter film using dry oxygen-wet oxygen-dry oxygen alternating oxidation, the device upper surface light obtaining in step 4
Carve and form aluminum diffusion window, then carry out large-area aluminum diffusion under the sheltering of upper surface n+ diffusion region, natural in n- area
Form deeper wavy p base and pnp isolation area, then remove the oxide layer on whole device surface；
Step 6, re-form and shelter film using dry oxygen-wet oxygen-dry oxygen alternating oxidation, the device upper surface light obtaining in step 5
Carve and form gate pole area and isolation area corrosion window, then carry out gate pole area and isolation area grooving using caustic solution；
Step 7, the device lower surface obtaining in step 6 get rid of the B of dilution2O3Source, carries out Large area coatings diffusion, formed GCT-A and
The p+ transparent anode area of GCT-B, meanwhile, expansion is also mended in the gate pole area of upper surface, then, removes on whole device surface
Oxide layer；
Step 8, re-form and shelter film using dry oxygen-wet oxygen-dry oxygen alternating oxidation, the device upper surface light obtaining in step 7
Carve and form isolation area corrosion window, then carry out anticaustic, etch away n+ and shelter diffusion region, form PNP-trench and be combined isolation
Area, then carries out the protection silicon dioxide pattern that next step is lithographically formed GCT-A and GCT-B door-negative electrode circle；
Step 9, the device lower surface hacking that step 8 is obtained, form high complex centre；After cleaning, the upper and lower table to whole device
Face evaporation of aluminum respectively, and sputtered titanium, nickel, silver-colored multiple-layer metallization film on the aluminium lamination of lower surface, are then carried out to the aluminium film of upper surface
Anti-carve, form each electrode after alloying；
Step 10, polyimide film is got rid of to the device upper surface that step 9 obtains, be lithographically formed the protection figure of gate pole area and isolation area
Shape, and carry out imidization process；Then carry out angle lap protection, surface passivation obtains final product.
7. preparation method according to claim 6 it is characterised in that：Formed between GCT-A and GCT-B in described step 4
Isolation area when, shelter with n+ diffusion sector width be more than its n+ negative electrode sector width.
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