CN104377153A - Wafer cleaner, nozzle, nozzle moving method and wafer moving method - Google Patents
Wafer cleaner, nozzle, nozzle moving method and wafer moving method Download PDFInfo
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- CN104377153A CN104377153A CN201410660929.7A CN201410660929A CN104377153A CN 104377153 A CN104377153 A CN 104377153A CN 201410660929 A CN201410660929 A CN 201410660929A CN 104377153 A CN104377153 A CN 104377153A
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000004140 cleaning Methods 0.000 claims abstract description 158
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 72
- 238000001514 detection method Methods 0.000 claims abstract description 65
- 239000012530 fluid Substances 0.000 claims abstract description 21
- 239000007921 spray Substances 0.000 claims description 96
- 238000007689 inspection Methods 0.000 claims description 16
- 238000005507 spraying Methods 0.000 abstract description 15
- 235000012431 wafers Nutrition 0.000 abstract 11
- 230000003287 optical effect Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000011664 signaling Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
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- 231100000719 pollutant Toxicity 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000012163 sequencing technique Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
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- 238000005538 encapsulation Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a wafer cleaner, a nozzle of the wafer cleaner and a method for controlling moving of the nozzle or moving of a wafer. The nozzle comprises a flow-shaped adjusting ring 2 which is arranged outside the nozzle in a sleeving mode and can rotate, and a flow volume control valve 3. The side, leading to the flow-shaped adjusting ring 2, of the flow volume control valve 3 is provided with a flow flat channel 5, and after the flow volume of cleaning fluid is adjusted through a valve element 3, the cleaning fluid flows into the flow flat channel 5. According to the technical scheme, the nozzle or the wafer is moved according to the rotating speed RPM, detected by a wafer rotating speed detection unit, of the wafer and the effective cleaning width x, detected by a nozzle water spraying width detection unit, of nozzle water spraying. The wafer cleaner can be used for cleaning different sizes of wafers, the nozzle does not need to be replaced, the moving speed of the wafer or the moving speed of a cleaning arm is controlled through the rotating speed of the wafer and the water outlet width of the nozzle, and the productivity and efficiency of the cleaner are not reduced while the wafer is fully cleaned.
Description
Technical field
The present invention relates to nozzle moving method, disk moving method and nozzle in Wafer cleaning machine, belong to integrated antenna package technical field.
Background technology
Wafer is Si semiconductor production of integrated circuits silicon wafer used, because its shape is circular, therefore is called wafer; Various circuit component structure can be manufactured on silicon, and become the IC product having certain electric sexual function.When manufacturing semiconductor device, normally on a common semiconductor disk, form multiple chip, this through multiple tracks treatment process, will comprise the operations such as burn into coating, doping, plating, till to the last forming sandwich construction.
Along with semiconductor process techniques strides forward to the direction that becomes more meticulous, in large scale integrated circuit (LSI) encapsulation process, slight pollution (such as particulate, metal and organic substance etc.) will affect yield and the reliability of large scale integrated circuit, cause the yield of LSI circuit product, stability to decline.Therefore, in each technological process link, how will dispose the pollutant be attached on silicon wafer, preventing pollution is diffused into next technique.Namely wafer cleaning has caused the great attention of people as far back as the beginning of the fifties to the importance of semi-conductor industry, this is because the pollutant of crystal column surface can have a strong impact on the performance of device, reliability and product yield.Along with the development of integrated circuit, the closeness of circuit improves day by day, the size of micro-structural macro day by day, and pollutant is also further outstanding on the impact of device, so that the technology of preparing of clean surface has become the key technology making various integrated circuit.The pollutant of crystal column surface exists in the oxide-film of crystal column surface or wafer self in the mode of chemistry or physical absorption with the form of atom, ion, molecule, particle or film usually.Wafer cleaning requires that can remove all kinds of impurity does not damage wafer again.Cleaning can be divided into physical cleaning and chemical cleaning, and chemical cleaning comprises again aqueous cleaning and gas phase cleaning etc.Owing to there being more scheme can for selecting, inexpensive and safety, to impurity and matrix selectivity good, can by impurity cleaning to many advantages such as low-down levels, aqueous cleaning dominate always in cleaning technique.
The research of wafer cleaning technology and improve in recent years by numerous semiconductor equipment manufacture manufacturer pay close attention to.Some Enterprises improves above-mentioned cleaning device, but is all devoted to the quality improving cleaning.Such as, Zhongxin International Integrate Circuit Manufacture (Shanghai) Co Ltd. improves said apparatus, it discloses a kind of wafer cleaning liquid water column monitoring position device in the Chinese utility model patent that application number is CN03279085.6, for wafer cleaning liquid water column position probing, it comprises optical signaling device, there is optical signalling emission source, this optical signaling device is located at the first side of a wafer cleaning plummer, and this optical signalling emission source center is just to the pivot of this wafer cleaning plummer; Optical signal receiving arrangement, is located at the opposite side of a wafer cleaning plummer first side, has the optical signalling ability receiving the injection of this optical signalling emission source; And signal processing apparatus, be connected with this optical signal receiving arrangement, the reception situation of this optical signal receiving arrangement can be judged; Wherein this optical signal receiving arrangement receives fainter optical signalling when this optical signalling passes through cleaning fluid water column; The signal being detected this cleaning fluid water column position by Water column position detecting device for wafer cleaning liquid reaches the operating personnel informing wafer cleaning system, to make suitable process.
But, except cleaning quality, the cleaning efficiency no less important of Wafer cleaning machine.In the formula setting of Wafer cleaning machine, except the pressure versus flow of water column, the rotating speed of disk is also the key factor affecting cleaning performance and board production capacity with the mutual collocation of water spray arm (nozzle) translational speed.Such as, suppose that, in the fixed situation of water spray arm, disk rotates a circle, then will by cleaning one time at the radiation scope disk of water column; And when arm of spraying water starts mobile, if its translational speed is too fast, then also may not rotate a circle water spray arm and just removed by disk, the blind area of cleaning can be caused like this, reduce the effect of cleaning; And the very mistake of arm translational speed setting of spraying water, although cleaning performance can ensure, the waste of cleaning fluid can be caused, also will reduce the production capacity of board.
In sum, do not solve disk rotating speed in prior art and how to arrange in pairs or groups with water spray arm Speed Setting separately, and the structure of nozzle how appropriate design, just can reach this technical problem of optimization of board production capacity and cleaning performance.
Summary of the invention
In order to solve the problem, the present invention provide firstly the method for nozzle movement in a kind of Wafer cleaning process, comprises the following steps:
Detect the rotating speed RPM of disk;
Detect effective cleaning width x of nozzle spray;
According to the rotating speed of disk and effective cleaning width x moving nozzle of nozzle spray.
Preferably, the step according to the rotating speed of disk and effective cleaning width x moving nozzle of nozzle spray is: with v=[RPMx/60] 2 moving nozzle, and wherein v is the translational speed of water spray arm, and unit is mm/second.
Alternatively, effective cleaning width x of nozzle spray is first detected in the above-mentioned methods; The rotating speed RPM of rear detection disk.
The present invention also provides the method for disk movement in a kind of Wafer cleaning process, comprises the following steps:
Detect the rotating speed RPM of disk;
Detect effective cleaning width x of nozzle spray;
According to the rotating speed of disk and effective cleaning width x removable wafer of nozzle spray.
Preferably, the step according to the rotating speed of disk and effective cleaning width x removable wafer movement of nozzle spray is: with v=[RPMx/60] 2 moving nozzle, and wherein v is the translational speed of water spray arm, and unit is mm/second.
Alternatively, in the above-mentioned methods, effective cleaning width x of nozzle spray is first detected; The rotating speed RPM of rear detection disk.
The present invention also provides a kind of shower nozzle of Wafer cleaning machine: comprise and be placed on its outer rotatable water-flowing form adjustable ring 2, current size by-pass valve control 3, current size by-pass valve control 3 leads to water-flowing form adjustable ring 2 side and is provided with current flat channel 5, and cleaning fluid regulates after current size through valve core 3 and flows into current flat channel 5.
Further, the cross section of described current flat channel 5 is elliptical cylinder-shape, cleaning fluid regulates after current size through valve core 3 and flows into current flat channel 5, its shape has and cylindrically becomes elliptical cylinder-shape, then flow to water-flowing form adjustable ring 2, by the shape of the adjustable current of water-flowing form adjustable ring 2.Described water-flowing form adjustable ring 2 and shower nozzle are threaded; Water-flowing form adjustable ring 2 is a valve, is connected with shower nozzle by screw thread, and its internal cross section is oval.The controlled water outlet width x making water hole of rotary water current shape adjustment ring, the cleaning fluid after adjusting water outlet width x directly sprays.
On the other hand, present invention also offers a kind of Wafer cleaning machine, comprise above-mentioned shower nozzle.Preferably, also comprise: disk rotation speed detection unit, for detecting the rotating speed RPM of disk; Nozzle spray width detection unit, for detecting effective cleaning width x of nozzle spray, nozzle mobile control unit or disk mobile control unit, receive effective cleaning width x of the rotating speed RPM of disk that disk rotation speed detection unit detects and the nozzle spray of nozzle spray width detection unit inspection, the rotating speed RPM of disk detected according to disk rotation speed detection unit and effective cleaning width x moving nozzle of the nozzle spray of nozzle spray width detection unit inspection or disk.Movement speed v=[RPMx/60] 2 of nozzle or disk, unit is mm/second.
Present invention also offers a kind of Wafer cleaning machine, it comprises: disk rotation speed detection unit, for detecting the rotating speed RPM of disk; Nozzle spray width detection unit, for detecting effective cleaning width x of nozzle spray, nozzle mobile control unit, receive the rotating speed RPM of disk of disk rotation speed detection unit detection and effective cleaning width x of the nozzle spray of nozzle spray width detection unit inspection, according to the rotating speed RPM of disk of disk rotation speed detection unit detection and effective cleaning width x moving nozzle of the nozzle spray of nozzle spray width detection unit inspection.Movement speed v=[RPMx/60] 2 of nozzle, unit is mm/second.
On the other hand, present invention also offers a kind of Wafer cleaning machine, it comprises: disk rotation speed detection unit, for detecting the rotating speed RPM of disk; Nozzle spray width detection unit, for detecting effective cleaning width x of nozzle spray, disk mobile control unit, receive the rotating speed RPM of disk of disk rotation speed detection unit detection and effective cleaning width x of the nozzle spray of nozzle spray width detection unit inspection, according to the rotating speed RPM of disk of disk rotation speed detection unit detection and effective cleaning width x removable wafer of the nozzle spray of nozzle spray width detection unit inspection.Movement speed v=[RPMx/60] 2 of disk, unit is mm/second.
The present invention can bring following beneficial effect: the first, when spraying water from adjustable nozzle, adjustable nozzle ejection water shape be adjustable, the width-adjustable of cleaning fluid, therefore may be used for clean different size disk and without the need to changing nozzle; The second, controlled the translational speed of disk or arm of cleaning by disk rotary speed and nozzle water outlet width, while fully cleaning disk, can not reduce production capacity and the efficiency of machine.
Accompanying drawing explanation
Fig. 1 is the principle of Wafer cleaning machine of the prior art;
Fig. 2 is the present invention according to the rotating speed of disk and effective cleaning width x moving nozzle of nozzle spray or the schematic diagram of disk;
Fig. 3 is the nozzle structure figure of present invention wafer cleaning machine;
Fig. 4 is the sectional view of the current flat channel of shower nozzle in Wafer cleaning machine in the present invention;
Fig. 5 is the sectional view of the water-flowing form adjustable ring of shower nozzle in Wafer cleaning machine in the present invention;
Fig. 6 be in the present invention when water-flowing form adjustable ring is maximum block the apopore of current flat channel time schematic diagram;
Fig. 7 is the logic diagram of nozzle removable wafer cleaning machine in the present invention;
Fig. 8 is the logic diagram of disk removable wafer cleaning machine in the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the present invention, the technical scheme in the present invention is clearly and completely described.
The method of nozzle movement in a kind of Wafer cleaning process is embodiments, provides of the present invention first.The method comprises the following steps:
Detect the rotating speed RPM of disk.As shown in Figure 1, disk is positioned on disk plummer, and disk plummer rotates and drives disk synchronous axial system.
Detect effective cleaning width x of nozzle spray.In another embodiment, the sequencing of above-mentioned two steps can be replaced.That is, effective cleaning width x of nozzle spray is first detected; Then the rotating speed RPM of disk is detected, i.e. (60 seconds) number of revolutions per minute.
Preferably, before the effective cleaning width x step detecting nozzle spray, also comprise adjustment nozzle spray drop point, make water spray drop point fall within wafer pivot to improve cleaning quality.
According to the rotating speed of disk and effective cleaning width x moving nozzle of nozzle spray.As shown in Figure 2, if r is the radius of disk, l is the length across full wafer disk, is equivalent to 2r, then arm of spraying water completes a range, and to move required number of times be l/x, or 2r/x.It is 60/RPM (unit: second) that disk revolves the required time that turns around.
In order to improve the cleaning efficiency of cleaning machine, disk revolves Integratively cleaning of having turned around, and the time required is like this shortest, i.e. l/x=1, or 2r/x=1.Therefore, in Wafer cleaning process provided by the invention, nozzle moves in moving method, and the required cleaning shortest time is t=l/x60/RPM.Therefore, in implementation process, arm of can spraying water when the moving range of arm of spraying water covers full wafer disk completes and once moves, and each region of disk can be cleaned once.Then disk rotating speed with the pass of water spray arm translational speed is:
v＝l/t·2＝2r/t·2＝2r·RPM/60·x/2r·2＝[RPM·x/60]·2
Above-mentioned v is the translational speed of water spray arm, and the namely translational speed of nozzle, unit is mm/second.V=l/t2, take advantage of 2 to be because l is length across full wafer disk, be equivalent to 2r, namely often circle has cleaned 2 times, take advantage of 2 be equivalent to speed doublings then wash number reduce by half.
In an illustrative embodiment, suppose that disk rotating speed is 300RPM, water spray effective width is 0.01inch (0.254mm), then
v＝[RPM·x/60]·2＝[300·0.254/60]·2＝1.27·2＝2.54mm/sec
That is, for when arm translational speed of spraying water is more than 2.54mm/sec, just may there is blind area in Wafer cleaning; Although during Wafer cleaning, water spray arm can not only have swing once, but can swing a period of time back and forth, and water spray arm translational speed is too fast or can reduce the effect of cleaning, and subregion is not yet cleaned to; On the other hand, arm translational speed of spraying water crosses the production capacity and efficiency that can reduce machine slowly.
Because disk moves and moves with arm of spraying water is relative, the effect that disk does not move water spray arm movement moves with disk and the effect of arm not movement of spraying water is the same.Therefore, the method for disk movement in a kind of Wafer cleaning process is embodiments, provides of the present invention second.The method comprises the following steps:
Step one: the rotating speed RPM detecting disk, i.e. (60 seconds) number of revolutions per minute.
Step 2: the effective cleaning width x detecting nozzle spray.It will be understood by those of skill in the art that the sequencing of above-mentioned two steps can be replaced.That is, effective cleaning width x of nozzle spray is first detected; Then the rotating speed RPM of disk is detected.
Step 3: according to the rotating speed of disk and effective cleaning width x removable wafer of nozzle spray.As shown in Figure 2, if r is the radius of disk, l is the length across full wafer disk, is equivalent to 2r, then arm of spraying water completes a range, and to move required number of times be l/x, or 2r/x.In Wafer cleaning process provided by the invention, disk moves in moving method, and the required cleaning shortest time is t=l/x60/RPM.Therefore, in implementation process, can complete and once move by disk when the moving range of arm of spraying water covers full wafer disk, each region of disk can be cleaned once.Then disk rotating speed with the pass of water spray arm translational speed is:
v＝l/t·2＝2r/t·2＝2r·RPM/60·x/2r·2＝[RPM·x/60]·2
Above-mentioned v is the translational speed of disk, and unit is mm/second.V=l/t2, take advantage of 2 to be because l is length across full wafer disk, be equivalent to 2r, namely often circle has cleaned 2 times, take advantage of 2 be equivalent to speed doublings then wash number reduce by half.
In an illustrative embodiment, suppose that disk rotating speed is 300RPM, water spray effective width is 0.01inch (0.254mm), then
v＝[RPM·x/60]·2＝[300·0.254/60]·2＝1.27·2＝2.54mm/sec
That is, for when disk translational speed is more than 2.54mm/sec, just may there is blind area in Wafer cleaning; Maintenance water spray arm is motionless and disk moves, and can reduce the effect of cleaning when disk translational speed is too fast, subregion is not yet cleaned to, and disk translational speed crosses the production capacity and efficiency that can reduce machine slowly.
In the 3rd execution mode of the present invention, provide a kind of and execution mode one, the matching used Wafer cleaning machine of execution mode two nozzle adjustable structure.As shown in Figure 3, this nozzle structure 1 comprises: be placed on its outer rotatable water-flowing form adjustable ring 2, described water-flowing form adjustable ring 2 and shower nozzle 1 are threaded engagement.Shower nozzle is provided with current size by-pass valve control 3, it is threaded with shower nozzle, comprises the valve core 3-1 be communicated with shower nozzle 1, rotary screw 3-2, drive valve core 3-1 to move toward the water stream channel 4 of shower nozzle inside by the turn of rotary screw 3-2 and control current size, water stream channel 4 is cylindrical.
Preferably, current size by-pass valve control 3 leads to water-flowing form adjustable ring 2 side and is provided with current flat channel 5, and the cross section of current flat channel 5 is elliptical cylinder-shape, as shown in Figure 4.Cleaning fluid regulates after current size through valve core 3 and flows into current flat channel 5, and its shape has and cylindrically becomes elliptical cylinder-shape, then flow to water-flowing form adjustable ring 2, can be regulated the shape of current by water-flowing form adjustable ring 2.Water-flowing form adjustable ring 2 is a valve, is connected with shower nozzle by screw thread, can rotate around shower nozzle, and its internal cross section is oval, as shown in Figure 5.By rotary water current shape adjustment ring, can control the water outlet shape of apopore and then control its water outlet width x, the cleaning fluid after adjusting water outlet width x directly sprays.When water-flowing form adjustable ring 2 does not block the apopore of current flat channel 5, now the water outlet width of nozzle is maximum.Because now water outlet shape is oval, therefore cleaning fluid is flat ejection; If now turn water-flowing form adjustable ring 2, then water-flowing form adjustable ring 2 is by partial occlusion current flat channel 5, when water-flowing form adjustable ring 2 part blocks the apopore of current flat channel 5, the cleaning fluid of shower nozzle ejection is tending towards cylindrical, namely usually said linear pattern.Fig. 6 illustrate when water-flowing form adjustable ring 2 is maximum block the apopore of current flat channel 5 time situation, now the water outlet width of nozzle is minimum.
In the 4th execution mode of the present invention, provide a kind of Wafer cleaning machine.It comprises the shower nozzle described in the 3rd execution mode, and this nozzle structure 1 comprises: be placed on its outer rotatable water-flowing form adjustable ring 2, described water-flowing form adjustable ring 2 and shower nozzle 1 are threaded engagement.Shower nozzle is provided with current size by-pass valve control 3, it is threaded with shower nozzle, comprises the valve core 3-1 be communicated with shower nozzle 1, rotary screw 3-2, drive valve core 3-1 to move toward the water stream channel 4 of shower nozzle inside by the turn of rotary screw 3-2 and control current size, water stream channel 4 is cylindrical.Current size by-pass valve control 3 leads to water-flowing form adjustable ring 2 side and is provided with current flat channel 5, the cross section of current flat channel 5 is elliptical cylinder-shape, cleaning fluid regulates after current size through valve core 3 and flows into current flat channel 5, its shape has and cylindrically becomes elliptical cylinder-shape, then flow to water-flowing form adjustable ring 2, the shape of current can be regulated by water-flowing form adjustable ring 2.Water-flowing form adjustable ring 2 is a valve, is connected with nozzle by screw thread, can rotate around shower nozzle, and its internal cross section is oval.By rotary water current shape adjustment ring, can control the water outlet shape of apopore and then control its water outlet width x, the cleaning fluid after adjusting water outlet width x directly sprays.When water-flowing form adjustable ring 2 does not block the apopore of current flat channel 5, now the water outlet width of nozzle is maximum.Because now water outlet shape is oval, therefore cleaning fluid is flat ejection; If now turn water-flowing form adjustable ring 2, then water-flowing form adjustable ring 2 is by partial occlusion current flat channel 5, when water-flowing form adjustable ring 2 part blocks the apopore of current flat channel 5, the cleaning fluid of shower nozzle ejection is tending towards cylindrical, namely usually said linear pattern.Fig. 6 illustrate when water-flowing form adjustable ring 2 is maximum block the apopore of current flat channel 5 time situation, now the water outlet width of nozzle is minimum.
In the 5th execution mode of the present invention, provide a kind of based on the Wafer cleaning machine described in the 4th execution mode.As shown in Figure 7, it comprises: disk rotation speed detection unit, is arranged on disk plummer, for detecting the rotating speed RPM of disk.Nozzle spray width detection unit, for detecting effective cleaning width x of nozzle spray, nozzle mobile control unit, receive the rotating speed RPM of disk of disk rotation speed detection unit detection and effective cleaning width x of the nozzle spray of nozzle spray width detection unit inspection, according to the rotating speed RPM of disk of disk rotation speed detection unit detection and effective cleaning width x moving nozzle of the nozzle spray of nozzle spray width detection unit inspection.Preferably, v=[RPMx/60] 2.Above-mentioned v is water spray arm, the i.e. translational speed of nozzle, and unit is mm/second.
In the 6th execution mode of the present invention, provide a kind of based on the Wafer cleaning machine described in the 4th execution mode.As shown in Figure 8, it comprises: disk rotation speed detection unit, is arranged on disk plummer, for detecting the rotating speed RPM of disk.Nozzle spray width detection unit, for detecting effective cleaning width x of nozzle spray, disk mobile control unit, receive the rotating speed RPM of disk of disk rotation speed detection unit detection and effective cleaning width x of the nozzle spray of nozzle spray width detection unit inspection, the rotating speed RPM of disk detected according to disk rotation speed detection unit and effective cleaning width x of the nozzle spray of nozzle spray width detection unit inspection moves, disk.Preferably, v=[RPMx/60] 2.Above-mentioned v is the translational speed of disk, and unit is mm/second.
The present invention can bring following beneficial effect: the first, when spraying water from adjustable nozzle, adjustable nozzle ejection water shape be adjustable, the width-adjustable of cleaning fluid, therefore may be used for clean different size disk and without the need to changing nozzle; The second, controlled the translational speed of disk or arm of cleaning by disk rotary speed and nozzle water outlet width, while fully cleaning disk, can not reduce production capacity and the efficiency of machine.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (17)
1. a method for nozzle movement in Wafer cleaning process, comprises the following steps:
Detect the rotating speed RPM of disk;
Detect effective cleaning width x of nozzle spray;
According to the rotating speed of disk and effective cleaning width x moving nozzle of nozzle spray.
2. the method for nozzle movement in Wafer cleaning process as claimed in claim 1, it is characterized in that: the step according to the rotating speed of disk and effective cleaning width x moving nozzle of nozzle spray is: with v=[RPMx/60] 2 moving nozzle, wherein v is the translational speed of water spray arm, and unit is mm/second.
3. the method for nozzle movement in Wafer cleaning process as claimed in claim 1 or 2, is characterized in that: the effective cleaning width x first detecting nozzle spray; The rotating speed RPM of rear detection disk.
4. a method for disk movement in Wafer cleaning process, comprises the following steps:
Detect the rotating speed RPM of disk;
Detect effective cleaning width x of nozzle spray;
According to the rotating speed of disk and effective cleaning width x removable wafer of nozzle spray.
5. the method for disk movement in Wafer cleaning process as claimed in claim 1, it is characterized in that: the step according to the rotating speed of disk and effective cleaning width x removable wafer movement of nozzle spray is: with v=[RPMx/60] 2 moving nozzle, wherein v is the translational speed of water spray arm, and unit is mm/second.
6. the method for disk movement in the Wafer cleaning process as described in claim 4 or 5, is characterized in that: the effective cleaning width x first detecting nozzle spray; The rotating speed RPM of rear detection disk.
7. the shower nozzle of a Wafer cleaning machine, it is characterized in that: comprise and be placed on its outer rotatable water-flowing form adjustable ring (2), current size by-pass valve control (3), current size by-pass valve control (3) is provided with current flat channel (5) towards water-flowing form adjustable ring (2) side, and cleaning fluid regulates after current size through valve core (3) and flows into current flat channel (5).
8. the shower nozzle of Wafer cleaning machine as claimed in claim 7, it is characterized in that: the cross section of described current flat channel (5) is elliptical cylinder-shape, cleaning fluid regulates after current size through valve core (3) and flows into current flat channel (5), its shape has and cylindrically becomes elliptical cylinder-shape, then flow to water-flowing form adjustable ring (2), by the shape of water-flowing form adjustable ring (2) adjustable current.
9. the shower nozzle of Wafer cleaning machine as claimed in claim 8, is characterized in that: described water-flowing form adjustable ring (2) and shower nozzle are threaded; Water-flowing form adjustable ring (2) is a valve, is connected with shower nozzle by screw thread, and its internal cross section is oval.
10. the shower nozzle of Wafer cleaning machine as claimed in claim 9, is characterized in that: the controlled water outlet width x making water hole of rotary water current shape adjustment ring, the cleaning fluid after adjusting water outlet width x directly sprays.
11. 1 kinds of Wafer cleaning machines, it comprises the shower nozzle of the Wafer cleaning machine described in claim 7-10 any one.
12. Wafer cleaning machines as claimed in claim 11, is characterized in that, also comprise: disk rotation speed detection unit, for detecting the rotating speed RPM of disk; Nozzle spray width detection unit, for detecting effective cleaning width x of nozzle spray, nozzle mobile control unit or disk mobile control unit, receive effective cleaning width x of the rotating speed RPM of disk that disk rotation speed detection unit detects and the nozzle spray of nozzle spray width detection unit inspection, the rotating speed RPM of disk detected according to disk rotation speed detection unit and effective cleaning width x moving nozzle of the nozzle spray of nozzle spray width detection unit inspection or disk.
13. Wafer cleaning machines as claimed in claim 12, is characterized in that: movement speed v=[RPMx/60] 2 of nozzle or disk, unit is mm/second.
14. 1 kinds of Wafer cleaning machines, it comprises: disk rotation speed detection unit, for detecting the rotating speed RPM of disk; Nozzle spray width detection unit, for detecting effective cleaning width x of nozzle spray, nozzle mobile control unit, receive the rotating speed RPM of disk of disk rotation speed detection unit detection and effective cleaning width x of the nozzle spray of nozzle spray width detection unit inspection, according to the rotating speed RPM of disk of disk rotation speed detection unit detection and effective cleaning width x moving nozzle of the nozzle spray of nozzle spray width detection unit inspection.
15. Wafer cleaning machines as claimed in claim 14, is characterized in that: movement speed v=[RPMx/60] 2 of nozzle, unit is mm/second.
16. 1 kinds of Wafer cleaning machines, it comprises: disk rotation speed detection unit, for detecting the rotating speed RPM of disk; Nozzle spray width detection unit, for detecting effective cleaning width x of nozzle spray, disk mobile control unit, receive the rotating speed RPM of disk of disk rotation speed detection unit detection and effective cleaning width x of the nozzle spray of nozzle spray width detection unit inspection, according to the rotating speed RPM of disk of disk rotation speed detection unit detection and effective cleaning width x removable wafer of the nozzle spray of nozzle spray width detection unit inspection.
17. Wafer cleaning machines as claimed in claim 16, is characterized in that: movement speed v=[RPMx/60] 2 of disk, unit is mm/second.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410660929.7A CN104377153B (en) | 2014-11-18 | 2014-11-18 | A kind of Wafer cleaning machine and its nozzle moving method, disk moving method |
| CN201710452478.1A CN107359107B (en) | 2014-11-18 | 2014-11-18 | Spray head for wafer cleaning machine and wafer cleaning machine |
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| CN201410660929.7A CN104377153B (en) | 2014-11-18 | 2014-11-18 | A kind of Wafer cleaning machine and its nozzle moving method, disk moving method |
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| CN201710452478.1A Division CN107359107B (en) | 2014-11-18 | 2014-11-18 | Spray head for wafer cleaning machine and wafer cleaning machine |
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| CN104377153B CN104377153B (en) | 2018-07-17 |
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| CN201410660929.7A Active CN104377153B (en) | 2014-11-18 | 2014-11-18 | A kind of Wafer cleaning machine and its nozzle moving method, disk moving method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107008038A (en) * | 2017-04-27 | 2017-08-04 | 云南科力新材料股份有限公司 | Device for concentrating ore pulp discharge |
| US11869779B2 (en) | 2020-10-13 | 2024-01-09 | Changxin Memory Technologies, Inc. | Wafer cleaning equipment and cleaning method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110834023A (en) * | 2018-08-15 | 2020-02-25 | 宝钢工程技术集团有限公司 | Air curtain type acid mist protection device and using method thereof |
| CN109013090B (en) * | 2018-09-18 | 2020-07-07 | 江苏金泰祥内外门业有限公司 | Glue coating box |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101069888A (en) * | 2007-06-14 | 2007-11-14 | 北京七星华创电子股份有限公司 | Method and apparatus for washing single silicon-chip |
| CN101136319A (en) * | 2006-08-29 | 2008-03-05 | 大日本网目版制造株式会社 | Substrate processing method and substrate processing apparatus |
| CN102043340A (en) * | 2010-10-29 | 2011-05-04 | 沈阳芯源微电子设备有限公司 | Method for uniformly spraying photoresist |
| CN103871839A (en) * | 2012-12-13 | 2014-06-18 | 台湾积体电路制造股份有限公司 | Apparatus and method of cleaning wafers |
| US20140182632A1 (en) * | 2012-12-28 | 2014-07-03 | Ebara Corporation | Substrate cleaning apparatus and substrate cleaning method |
| CN104143520A (en) * | 2010-03-31 | 2014-11-12 | 大日本网屏制造株式会社 | Substrate treatment apparatus |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3655576B2 (en) * | 2001-07-26 | 2005-06-02 | 株式会社東芝 | Liquid film forming method and semiconductor device manufacturing method |
| JP5036664B2 (en) * | 2008-09-04 | 2012-09-26 | 東京エレクトロン株式会社 | Nozzle cleaning in liquid treatment, treatment liquid drying prevention method and apparatus |
| JP5743853B2 (en) * | 2010-12-28 | 2015-07-01 | 東京エレクトロン株式会社 | Liquid processing apparatus and liquid processing method |
| CN103586154B (en) * | 2013-10-29 | 2015-10-21 | 华中科技大学 | Electrospray device, electron spray is utilized to prepare method and the solar cell of solar cell anti-reflection layer |
-
2014
- 2014-11-18 CN CN201710452478.1A patent/CN107359107B/en active Active
- 2014-11-18 CN CN201410660929.7A patent/CN104377153B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101136319A (en) * | 2006-08-29 | 2008-03-05 | 大日本网目版制造株式会社 | Substrate processing method and substrate processing apparatus |
| CN101069888A (en) * | 2007-06-14 | 2007-11-14 | 北京七星华创电子股份有限公司 | Method and apparatus for washing single silicon-chip |
| CN104143520A (en) * | 2010-03-31 | 2014-11-12 | 大日本网屏制造株式会社 | Substrate treatment apparatus |
| CN102043340A (en) * | 2010-10-29 | 2011-05-04 | 沈阳芯源微电子设备有限公司 | Method for uniformly spraying photoresist |
| CN103871839A (en) * | 2012-12-13 | 2014-06-18 | 台湾积体电路制造股份有限公司 | Apparatus and method of cleaning wafers |
| US20140182632A1 (en) * | 2012-12-28 | 2014-07-03 | Ebara Corporation | Substrate cleaning apparatus and substrate cleaning method |
| TW201428842A (en) * | 2012-12-28 | 2014-07-16 | Ebara Corp | Substrate cleaning apparatus and substrate cleaning method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107008038A (en) * | 2017-04-27 | 2017-08-04 | 云南科力新材料股份有限公司 | Device for concentrating ore pulp discharge |
| CN107008038B (en) * | 2017-04-27 | 2023-07-07 | 云南科力环保股份公司 | Device for discharging concentrated ore pulp |
| US11869779B2 (en) | 2020-10-13 | 2024-01-09 | Changxin Memory Technologies, Inc. | Wafer cleaning equipment and cleaning method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104377153B (en) | 2018-07-17 |
| CN107359107A (en) | 2017-11-17 |
| CN107359107B (en) | 2020-07-14 |
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