CN104369440A - All-dielectric reflection film for lasers, and preparation method thereof - Google Patents
All-dielectric reflection film for lasers, and preparation method thereof Download PDFInfo
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- CN104369440A CN104369440A CN201410483247.3A CN201410483247A CN104369440A CN 104369440 A CN104369440 A CN 104369440A CN 201410483247 A CN201410483247 A CN 201410483247A CN 104369440 A CN104369440 A CN 104369440A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
Abstract
The present invention discloses an all-dielectric reflection film for lasers, and a preparation method thereof, wherein the all-dielectric reflection film has characteristics of continuous production process, low production cost and easy production. According to the all-dielectric reflection film for lasers, a silicide film layer with a refractive index of 2.5-4.5 is adopted to produce the high refractive index film layer, a silicide film layer with a refractive index of 1.4-2.1 is adopted to produce the low refractive index film layer, both the high refractive index film layer and the low refractive index film layer adopt the silicide film layers, and doping gas is introduced into the reaction chamber only through a vapor phase doping method to achieve doping so as to obtain different silicide film layers with different refractive indexes. According to the present invention, the structure of the all-dielectric reflection film only adopts the silicide as the film layer material, the reflection film adopting the structure is subjected to one-time film forming by adopting the mature PECVD technology during the whole preparation process, and the whole preparation work is the one-time forming so as to provide advantages of continuous process and one-time film forming. The preparation method is suitable for popularization and application in the field of optical devices.
Description
Technical field
The present invention relates to fields of light devices, be specifically related to a kind of all dielectric reflectance coating for laser instrument and preparation method thereof.
Background technology
Optical thin film is the important component part of contemporary optics instrument and various optics, and it is based on the interference of light, carrys out practical function by light intensity, the polarization state changing transmitted light or reverberation.Wherein, optics reflecting film occupies extremely important status, is widely used in military project and civil area.
Reflectance coating, mainly realizes energy reflection, comprises metallic reflective coating and all dielectric reflectance coating.Metallic reflective coating due to light loss greatly in optics application few.Full dielectric reflectance coating is based upon on multiple-beam interference basis, and traditional all dielectric reflectance coating is λ by optical thickness
0/ 4 (λ
0for lambda1-wavelength) high refractive index layer and optical thickness be λ
0/ 4 (λ
0for lambda1-wavelength) film system that low-index film is alternately coated with, as shown in Figure 1, such multilayer high-reflecting film available symbols represents its structure: SHLHL ... HLHA=S (HL)
nhA; Wherein, S represents substrate, and A is air, and it is λ that H represents optical thickness
0the high refractive index layer of/4; It is λ that L represents optical thickness
0the low-index film of/4.Such laminated reflective film has (2n+1) tunic, and wherein that adjacent with substrate S and air A is all high refractive index layer H.
Traditional all dielectric reflectance coating is alternately coated with by the different materials of high and low refractive index.Wherein, conventional low-index material generally selects SiO
2, what high-index material was conventional has HfO
2, TiO
2, ZrO
2, Ta
2o
5and Y
2o
3deng, therefore need to be coated with high refractive index layer and low-index film respectively, namely need different equipment to be coated with high refractive index layer and low-index film respectively, whole like this reflectance coating manufacture craft discontinuous, and cost of manufacture is higher, expend time in longer, large-area manufacturing difficulty.
Summary of the invention
Technical problem to be solved by this invention be to provide a kind of manufacture craft continuously, cost of manufacture is lower and be convenient to all dielectric reflectance coating for laser instrument that makes.
The present invention solves the problems of the technologies described above adopted technical scheme: this is used for all dielectric reflectance coating of laser instrument, comprise substrate and multilayer high refractive index layer, the upper surface being arranged on substrate that described multilayer high refractive index layer stacks gradually, one deck low-index film is provided with between described adjacent two-layer high refractive index layer, the silicide rete of described high refractive index layer to be refractive index be 2.5-4.5, the silicide rete of described low-index film to be refractive index be 1.4-2.1.
Further, described high refractive index layer adopts amorphous silicon film layer or silicon carbide film layer.
Further, described low-index film adopts silicon nitride film layer.
Present invention also offers a kind of preparation method preparing the above-mentioned all dielectric reflectance coating for laser instrument, its concrete steps are as described below:
A, cleaning is carried out to substrate;
B, substrate is put into PECVD reative cell, and be evacuated to 10
-4below Pa;
C, employing PECVD chemical vapour deposition technique deposit in substrate top surface the silicide rete that one deck refractive index is 2.5-4.5;
Remaining SiH in D, use nitrogen purge PECVD reative cell
4after pass into helium, open radio-frequency power supply and improve the film surface pattern formed by step C, after improvement stop pass into helium;
E, employing PECVD chemical vapour deposition technique deposit at the silicide rete upper surface entering step D process the silicide rete that one deck refractive index is 1.4-2.1;
Remaining SiH in F, use nitrogen purge PECVD reative cell
4after pass into helium, open radio-frequency power supply and improve the film surface pattern formed by step e, after improvement stop pass into helium;
G, repetition step C to F form the reflectance coating be made up of multilayer silicide rete.
Further, in step C, when the silicide rete deposited is amorphous silicon film layer, its concrete deposition process is as follows: first pass into H to PECVD reative cell
2and SiH
4gas, SiH
4the flow that passes into of gas is 5-15sccm, H
2the flow that passes into of gas is 50-2000sccm, and arranging deposition power is 20-90mw/cm
3, underlayer temperature is 250 DEG C-350 DEG C, and sedimentation time is 20-120min, powered-down after deposition.
Further, described SiH
4the flow that passes into of gas is 5sccm, H
2the flow that passes into of gas is 100sccm, and arranging deposition power is 30mw/cm
3, underlayer temperature is 250 DEG C, and sedimentation time is 60min.
Further, in step C, when the silicide rete deposited is silicon carbide film layer, its concrete deposition process is as follows: first pass into H to PECVD reative cell
2, SiH
4, CH
3siCl
3gas, SiH
4the flow that passes into of gas is 5-15sccm, H
2the flow that passes into of gas is, 20-1000sccm, CH
3siCl
3pass into flow 5-30sccm, arranging deposition power is 20-150mw/cm
3, underlayer temperature is 650 DEG C-1350 DEG C, and sedimentation time is 20-120min, powered-down after deposition.
Further, described SiH
4the flow that passes into of gas is 5sccm, H
2the flow that passes into of gas is 200sccm, CH
3siCl
3pass into flow 10sccm, arranging deposition power is 50mw/cm
3between, underlayer temperature 1150 DEG C, sedimentation time is 60min.
Further, in step e, when the silicide rete deposited is silicon nitride film layer, its concrete deposition process is as follows: first pass into H to PECVD reative cell
2, SiH
4, NH
3gas, SiH
4the flow that passes into of gas is 5-15sccm, H
2the flow that passes into of gas is 50-2000sccm, NH
3the flow that passes into of gas is 5-30sccm, and arranging deposition power is 20-150mw/cm
3, underlayer temperature is 250 DEG C-350 DEG C, and sedimentation time is 20-120min, powered-down after deposition.
Further, described SiH
4the flow that passes into of gas is 5sccm, H
2the flow that passes into of gas is 120sccm, NH
3the flow that passes into of gas is 8sccm, and deposition power is 30mw/cm
3, underlayer temperature is 250 DEG C, and sedimentation time is 60min.
Beneficial effect of the present invention: the employing of all dielectric reflectance coating for laser instrument refractive index of the present invention is that the silicide rete of 2.5-4.5 is made into high refractive index layer, employing refractive index is that the silicide rete of 1.4-2.1 is made into low-index film, high refractive index layer and low-index film are all adopt silicide rete, different silicide retes only need pass into impurity gas (as passed into NH3 gas respectively by the method for gas phase doping in reaction chamber, CH3 gas, steam etc. can obtain SiNx respectively, SiC, SiO2 film) realize doping to obtain the different silicide rete of refractive index, this reflectance coating structurally only have employed silicide as film material, adopt the reflectance coating of this structure at the omnidistance PECVD technology one-pass film-forming all adopting maturation of preparation, after thin film has been coated with, only need to pass into the preparation that another kind of impurity gas can start lower thin film immediately, film is made to realize growth layering doping continuously, whole preparation work one-shot forming, there is technique continuous, the advantage of one-pass film-forming, simultaneously, the amorphous silicon membrane production technology of current maturation makes this kind of reflectance coating be able to low cost, prepared by large area, there is very strong Practical significance.
Accompanying drawing explanation
Fig. 1 is traditional all dielectric reflecting film structure schematic diagram for laser instrument;
Fig. 2 is the structural representation of the present invention for all dielectric reflectance coating of laser instrument;
Description of symbols in figure: substrate 1, high refractive index layer 2, low-index film 3.
Detailed description of the invention
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described.
As shown in Figure 2, this is used for all dielectric reflectance coating of laser instrument, comprise substrate 1 and multilayer high refractive index layer 2, the upper surface being arranged on substrate 1 that described multilayer high refractive index layer 2 stacks gradually, one deck low-index film 3 is provided with between described adjacent two-layer high refractive index layer 2, the silicide rete of described high refractive index layer 2 to be refractive indexes be 2.5-4.5, the silicide rete of described low-index film 3 to be refractive indexes be 1.4-2.1.All dielectric reflectance coating for laser instrument employing refractive index of the present invention is that the silicide rete of 2.5-4.5 is made into high refractive index layer 2, employing refractive index is that the silicide rete of 1.4-2.1 is made into low-index film 3, high refractive index layer 2 and low-index film 3 are all adopt silicide rete, different silicide retes only need pass into impurity gas as passed into NH3 gas respectively by the method for gas phase doping in reaction chamber, CH3 gas, steam etc. can obtain SiNx respectively, SiC, SiO2 film realizes doping to obtain the different silicide rete of refractive index, this reflectance coating structurally only have employed silicide as film material, adopt the reflectance coating of this structure at the omnidistance PECVD technology one-pass film-forming all adopting maturation of preparation, after thin film has been coated with, only need to pass into the preparation that another kind of impurity gas can start lower thin film immediately, film is made to realize growth layering doping continuously, whole preparation work one-shot forming, there is technique continuous, the advantage of one-pass film-forming, simultaneously, the amorphous silicon membrane production technology of current maturation makes this kind of reflectance coating be able to low cost, prepared by large area, there is very strong Practical significance.
In order to make high refraction film layer have higher refractive index, enable reflectance coating more act on incident light, described high refractive index layer 2 adopts amorphous silicon film layer or silicon carbide film layer.Further, described low-index film 3 adopts silicon nitride film layer.
In order to improve the reflectivity of reflectance coating further, the optical thickness of described high refractive index layer 2, low-index film 3 is λ
0/ 4.
In order to make light wave better through substrate 1, described substrate 1 adopts transparent material to be made, and as preferably, described substrate 1 adopts glass to be made.
Present invention also offers a kind of preparation method preparing the above-mentioned all dielectric reflectance coating for laser instrument, its concrete steps are as described below:
A, cleaning is carried out to substrate;
B, substrate is put into PECVD reative cell, and be evacuated to 10
-4below Pa;
C, employing PECVD chemical vapour deposition technique deposit in substrate top surface the silicide rete that one deck refractive index is 2.5-4.5;
Remaining SiH in D, use nitrogen purge PECVD reative cell
4after pass into helium, open radio-frequency power supply and improve the film surface pattern formed by step C, after improvement stop pass into helium;
E, employing PECVD chemical vapour deposition technique deposit at the silicide rete upper surface entering step D process the silicide rete that one deck refractive index is 1.4-2.1;
Remaining SiH in F, use nitrogen purge PECVD reative cell
4after pass into helium, open radio-frequency power supply and improve the film surface pattern formed by step e, after improvement stop pass into helium;
G, repetition step C to F form the reflectance coating be made up of multilayer silicide rete.
In above-mentioned machining process, in step C, when the silicide rete deposited is amorphous silicon film layer, its concrete deposition process is as follows: first pass into H to PECVD reative cell
2and SiH
4gas, SiH
4the flow that passes into of gas is 5-15sccm, H
2the flow that passes into of gas is 50-2000sccm, and arranging deposition power is 20-90mw/cm
3, underlayer temperature is 250 DEG C-350 DEG C, and sedimentation time is 20-120min, powered-down after deposition.
In order to the quality making finally shaping high refractive index layer reach higher, described SiH
4the flow that passes into of gas is 5sccm, H
2the flow that passes into of gas is 100sccm, and arranging deposition power is 30mw/cm
3, underlayer temperature is 250 DEG C, and sedimentation time is 60min.
In step C, when the silicide rete deposited is silicon carbide film layer, its concrete deposition process is as follows: first pass into H to PECVD reative cell
2, SiH
4, CH
3siCl
3gas, SiH
4the flow that passes into of gas is 5-15sccm, H
2the flow that passes into of gas is, 20-1000sccm, CH
3siCl
3pass into flow 5-30sccm, arranging deposition power is 20-150mw/cm
3, underlayer temperature is 650 DEG C-1350 DEG C, and sedimentation time is 20-120min, powered-down after deposition.
In order to the quality making finally shaping high refractive index layer reach higher, described SiH
4the flow that passes into of gas is 5sccm, H
2the flow that passes into of gas is 200sccm, CH
3siCl
3pass into flow 10sccm, arranging deposition power is 50mw/cm
3between, underlayer temperature 1150 DEG C, sedimentation time is 60min.
In step e, when the silicide rete deposited is silicon nitride film layer, its concrete deposition process is as follows: first pass into H to PECVD reative cell
2, SiH
4, NH
3gas, SiH
4the flow that passes into of gas is 5-15sccm, H
2the flow that passes into of gas is 50-2000sccm, NH
3the flow that passes into of gas is 5-30sccm, and arranging deposition power is 20-150mw/cm
3, underlayer temperature is 250 DEG C-350 DEG C, and sedimentation time is 20-120min, powered-down after deposition.
In order to the quality making finally shaping low-index film reach higher, described SiH
4the flow that passes into of gas is 5sccm, H
2the flow that passes into of gas is 120sccm, NH
3the flow that passes into of gas is 8sccm, and deposition power is 30mw/cm
3, underlayer temperature is 250 DEG C, and sedimentation time is 60min.
In the above-described embodiment, in step, various ways can be adopted to the cleaning of substrate, as long as substrate can be cleaned up, in order to ensure the effect of cleaning, the present invention adopts mode as described below to carry out cleaning to substrate: first, substrate is immersed in heavy metal particles and other impurity of removing surface in the solution of the concentrated sulfuric acid and potassium bichromate allotment; Then washed with de-ionized water substrate is used; Then substrate is carried out ultrasonic cleaning respectively in acetone and absolute ethyl alcohol; Finally repeatedly rinse substrate by deionized water and be placed in alcohol.Further, substrate carries out the time of ultrasonic cleaning respectively in acetone and absolute ethyl alcohol is 15min.
For the ease of at substrate surface deposition of amorphous silicon films, before carrying out step B, first substrate nitrogen is dried up, thus make substrate surface not stay any liquid.
Claims (10)
1. for all dielectric reflectance coating of laser instrument, comprise substrate (1) and multilayer high refractive index layer (2), the upper surface being arranged on substrate (1) that described multilayer high refractive index layer (2) stacks gradually, one deck low-index film (3) is provided with between described adjacent two-layer high refractive index layer (2), it is characterized in that: the silicide rete of described high refractive index layer (2) to be refractive index be 2.5-4.5, the silicide rete of described low-index film (3) to be refractive index be 1.4-2.1.
2. as claimed in claim 1 for all dielectric reflectance coating of laser instrument, it is characterized in that: described high refractive index layer (2) adopts amorphous silicon film layer or silicon carbide film layer.
3. as claimed in claim 2 for all dielectric reflectance coating of laser instrument, it is characterized in that: described low-index film (3) adopts silicon nitride film layer.
4., for the preparation method of all dielectric reflectance coating of laser instrument, it is characterized in that comprising the following steps:
A, cleaning is carried out to substrate;
B, substrate is put into PECVD reative cell, and be evacuated to 10
-4below Pa;
C, employing PECVD chemical vapour deposition technique deposit in substrate top surface the silicide rete that one deck refractive index is 2.5-4.5;
Remaining SiH in D, use nitrogen purge PECVD reative cell
4after pass into helium, open radio-frequency power supply and improve the film surface pattern formed by step C, after improvement stop pass into helium;
E, employing PECVD chemical vapour deposition technique deposit at the silicide rete upper surface through step D process the silicide rete that one deck refractive index is 1.4-2.1;
Remaining SiH in F, use nitrogen purge PECVD reative cell
4after pass into helium, open radio-frequency power supply and improve the film surface pattern formed by step e, after improvement stop pass into helium;
G, repetition step C to F form the reflectance coating be made up of multilayer silicide rete.
5. as claimed in claim 4 for the preparation method of all dielectric reflectance coating of laser instrument, it is characterized in that: in step C, when the silicide rete deposited is amorphous silicon film layer, its concrete deposition process is as follows: first pass into H to PECVD reative cell
2and SiH
4gas, SiH
4the flow that passes into of gas is 5-15sccm, H
2the flow that passes into of gas is 50-2000sccm, and arranging deposition power is 20-90mw/cm
3, underlayer temperature is 250 DEG C-350 DEG C, and sedimentation time is 20-120min, powered-down after deposition.
6., as claimed in claim 5 for the preparation method of all dielectric reflectance coating of laser instrument, it is characterized in that: described SiH
4the flow that passes into of gas is 5sccm, H
2the flow that passes into of gas is 100sccm, and arranging deposition power is 30mw/cm
3, underlayer temperature is 250 DEG C, and sedimentation time is 60min.
7. as claimed in claim 4 for the preparation method of all dielectric reflectance coating of laser instrument, it is characterized in that: in step C, when the silicide rete deposited is silicon carbide film layer, its concrete deposition process is as follows: first pass into H to PECVD reative cell
2, SiH
4, CH
3siCl
3gas, SiH
4the flow that passes into of gas is 5-15sccm, H
2the flow that passes into of gas is 20-1000sccm, CH
3siCl
3pass into flow 5-30sccm, arranging deposition power is 20-150mw/cm
3, underlayer temperature is 650 DEG C-1350 DEG C, and sedimentation time is 20-120min, powered-down after deposition.
8., as claimed in claim 7 for the preparation method of all dielectric reflectance coating of laser instrument, it is characterized in that: described SiH
4the flow that passes into of gas is 5sccm, H
2the flow that passes into of gas is 200sccm, CH
3siCl
3pass into flow 10sccm, arranging deposition power is 50mw/cm
3between, underlayer temperature 1150 DEG C, sedimentation time is 60min.
9. as claimed in claim 4 for the preparation method of all dielectric reflectance coating of laser instrument, it is characterized in that: in step e, when the silicide rete deposited is silicon nitride film layer, its concrete deposition process is as follows: first pass into H to PECVD reative cell
2, SiH
4, NH
3gas, SiH
4the flow that passes into of gas is 5-15sccm, H
2the flow that passes into of gas is 50-2000sccm, NH
3the flow that passes into of gas is 5-30sccm, and arranging deposition power is 20-150mw/cm
3, underlayer temperature is 250 DEG C-350 DEG C, and sedimentation time is 20-120min, powered-down after deposition.
10., as claimed in claim 9 for the preparation method of all dielectric reflectance coating of laser instrument, it is characterized in that: described SiH
4the flow that passes into of gas is 5sccm, H
2the flow that passes into of gas is 120sccm, NH
3the flow that passes into of gas is 8sccm, and deposition power is 30mw/cm
3, underlayer temperature is 250 DEG C, and sedimentation time is 60min.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2020015101A1 (en) * | 2018-07-18 | 2020-01-23 | 福州高意光学有限公司 | Wide angle application high reflective mirror |
| CN110885969A (en) * | 2019-10-30 | 2020-03-17 | 杭州美迪凯光电科技股份有限公司 | CVD preparation method for reducing dot defects of camera module and product thereof |
| CN111538115A (en) * | 2020-05-18 | 2020-08-14 | 广东拾传拾美新材料有限公司 | Gradient layer calcium carbonate-calcium silicate full-reflection film and preparation method thereof |
| CN113192942A (en) * | 2021-04-21 | 2021-07-30 | Tcl华星光电技术有限公司 | Display panel |
| CN114552382A (en) * | 2022-02-18 | 2022-05-27 | 北京京东方技术开发有限公司 | Reflective film structure and preparation method thereof |
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