CN102544200A - Preparation method for nano solar cell light trapping structure - Google Patents
Preparation method for nano solar cell light trapping structure Download PDFInfo
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- CN102544200A CN102544200A CN2011104294848A CN201110429484A CN102544200A CN 102544200 A CN102544200 A CN 102544200A CN 2011104294848 A CN2011104294848 A CN 2011104294848A CN 201110429484 A CN201110429484 A CN 201110429484A CN 102544200 A CN102544200 A CN 102544200A
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Abstract
The invention relates to a solar cell, in particular to a preparation method for a nano solar cell light trapping structure. A nano array capable of reducing reflectivity of incident light is prepared through the following steps of: cleaning a silicon wafer; forming a covering network; preparing a metal thin film through sputtering; forming a nano array structure; removing surface impurities and the like. The preparation method has the advantages of high uniformity, low preparation cost, easiness and convenience in operation, easiness in large-scale production and the like.
Description
Technical field
The present invention relates to solar cell, refer in particular to a kind of preparation method of nanometer solar cell light trapping structure.
Background technology
An important channel of improving the solar cell light conversion efficiency is to reduce the reflectivity that solar cell is just being faced sunlight; Forming coarse suede structure at present in the front of solar cell is the effective means that reduces reflectivity; Antireflective measure commonly used mainly contains: conventional method etch silicon substrate is adopted in (1), and lithographic method comprises: acid, alkali wet etching, reactive ion etching, photon/electron beam lithography and mechanical carving groove etc.; (2) sensitive surface at surface of silicon or battery prepares TiO
x(x≤2), SiN
xDeng reflectance coating; (3) prepare porous layer in surface of silicon and fall into light; (4) prepare special nanometer light trapping structure in surface of silicon, especially periodically sub-wavelength grate structure; Big quantity research is illustrated in periodicity, the systematicness nano array structure of certain given shape of silicon chip surface preparation; As shown in Figure 1; Not only can increase sunlight in the inner effective exercise length of silicon chip; Cause the coupling between the incident light, can also reduce incident light, thereby effectively improved the conversion efficiency of solar cell from the refractive index of air to the silicon chip propagation path.
Summary of the invention
The preparation method who the purpose of this invention is to provide a kind of nanometer solar cell light trapping structure to increase the absorption total amount of silica-based solar cell to light, improves its light conversion efficiency.
It is that in view of the above, its core technology is following according to metal inducement catalysis acid wet etching technique that the present invention solves the technical scheme that its key issue adopts:
1, silicon chip cleans;
2, covering up network forms;
3, the sputter of metallic film preparation;
4, nano array structure forms;
5, surface impurity is removed.
In the above-mentioned preparation scheme; The purpose of in the step 1 silicon chip being cleaned is in order to remove impurities on surface of silicon chip, oil stain and oxide layer; Make silicon chip have good water absorbing properties in addition; Criterion is following: the surface of the silicon chip after cleaning drips deionized water, and deionized water at room temperature dries at least naturally needs 48 hours.
In the above-mentioned preparation scheme, step 2 adopts Nano graphite powder to do solute and joins in the deionized water, is made into nano-graphite solution, and evenly drips to the silicon chip surface after the cleaning with dropper, when treating that nano-graphite solution forms the turbid state of glue, gets rid of even and oven dry with sol evenning machine.
In the above-mentioned preparation scheme, step 3 adopts magnetron sputtering technique to prepare argent or aluminium film, and base vacuum is 1.6 * 10
-4Pa, importing gas flow is 80 sccm, the employing argon gas is a protective gas.
In the above-mentioned preparation scheme, will deposit in the step 4 in the mixed solution that good sample is immersed in hydrogen peroxide solution, hydrofluoric acid and deionized water as corrosive liquid and handle 60 min, wherein, contain hydrogen peroxide solution 0.46 mol in every liter of mixed solution; Contain hydrofluoric acid 1 mol in every liter of mixed solution.
Beneficial effect of the present invention: a kind of preparation method of nanometer solar cell light trapping structure is provided, this method have have good uniformity, preparation cost is low, easy and simple to handle, be easy to advantages such as large tracts of land production.
Description of drawings
Fig. 1 is an array structure solar cell cross-sectional view;
Fig. 2 is a nano-graphite powder distribution map of the present invention;
Fig. 3 is the surface topography map of nanometer solar cell light trapping structure of the present invention.
Embodiment
1. silicon chip cleans
The vibration cleaning silicon chip is 10 minutes in the deionized water;
The sonic oscillation cleaning silicon chip is 10 minutes in the acetone;
Absolute alcohol sonic oscillation cleaning silicon chip 15 minutes;
Silicon chip is joined in the mixed solution of the concentrated sulfuric acid that volume ratio is 4:1 and hydrogen peroxide solution, boiled 30 minutes;
Silicon chip is joined in the mixed solution of ammoniacal liquor, hydrogen peroxide solution and deionized water that volume ratio is 1:2:5, constant temperature was preserved 60 minutes for 85 ℃, and the mass percentage concentration of ammoniacal liquor is 25 ~ 27%.
Wash repeatedly with deionized water, high pure nitrogen dries up.
2. covering up network forms
Aglycon amount percent concentration is the nano-graphite solution of 0.01%-0.15%, evenly drips on the silicon chip surface with dropper, when treating that nano surface graphite solution forms the turbid state of glue, gets rid of evenly with sol evenning machine, under 80 ℃ of constant temperature, Tumblies Dry at last, and is as shown in Figure 2.
3. the sputter of metallic film preparation
Utilize magnetron sputtering technique, at silicon chip surface sputtering silver film of handling well or aluminium film, as the catalyst of corrosion process; Sedimentary condition: base vacuum 1.6 * 10
-4Pa, radio-frequency power is 50 W, and the argon gas with flow 80 sccm under the room temperature is a protective gas, and strict control sputtering time is 5 ~ 10 nm with the control thickness of metal film.
4. nano array structure forms
The sample that deposition is good is immersed in the mixed solution of hydrogen peroxide solution, hydrofluoric acid and deionized water as corrosive liquid and handles 60 min; Wherein, 0.46 mol that contains hydrogen peroxide solution in every liter of mixed solution; Contain hydrofluoric acid 1 mol in every liter of mixed solution; Because silicon chip has good water absorbing properties, could guide the vertical corrosion of silicon of corrosive liquid to form nano array structure.
5. surface impurity is removed
Utilize the ultrasonic cleaner of power for 100W, sonic oscillation is 20 minutes in the mixed solution of acetic acid and deionized water, contains 20g acetic acid in the mixed solution of every liter of acetic acid and deionized water, and uses deionized water rinsing repeatedly, oven dry; Slight reaction takes place in acetate ion in the mixed solution and metal ion, helps removing the kish particle of silicon chip, through vibrating nano-graphite particle and kish particle removal.
Implementing measure: as shown in Figure 3; This nanometer solar cell light trapping structure can effectively form nano-array; Adopt the reflectance test appearance that silicon chip surface is carried out reflectance test; Test result shows: can be reduced to 3% to visible reflection of incident light rate, therefore be expected to further improve the absorption total amount of silica-based solar cell to light.
Claims (5)
1. the preparation method of a nanometer solar cell light trapping structure comprises the steps:
(1) silicon chip cleans: the surface of the silicon chip after the cleaning drips deionized water, and deionized water at room temperature dries at least naturally needs 48 hours;
(2) covering up network forms: adopt Nano graphite powder to do solute and join in the deionized water, be made into nano-graphite solution, and evenly drip to silicon chip surface with dropper, when treating that nano-graphite solution forms the turbid state of glue, get rid of the oven dry of even back with sol evenning machine;
(3) sputter of metallic film preparation: adopt magnetron sputtering technique plated metal aluminium or silver-colored film on silicon chip;
(4) nano array structure forms: the silicon chip that will deposit metallic film is immersed in the mixed solution of hydrogen peroxide solution, hydrofluoric acid and deionized water as corrosive liquid and handles 60 min; Wherein, contain hydrogen peroxide solution 0.46 mol in every liter of mixed solution; Contain hydrofluoric acid 1 mol in every liter of mixed solution;
(5) surface impurity is removed.
2. the preparation method of a kind of nanometer solar cell light trapping structure as claimed in claim 1 is characterized in that: the concrete steps that silicon chip cleans in the step 1 are following: the vibration cleaning silicon chip is 10 minutes in the deionized water; The sonic oscillation cleaning silicon chip is 10 minutes in the acetone; Absolute alcohol sonic oscillation cleaning silicon chip 15 minutes; Again silicon chip is joined in the mixed solution of the concentrated sulfuric acid that volume ratio is 4:1 and hydrogen peroxide solution, boiled 30 minutes; Silicon chip is joined in the mixed solution of ammoniacal liquor, hydrogen peroxide solution and deionized water that volume ratio is 1:2:5, constant temperature was preserved 60 minutes for 85 ℃ again, and the mass percentage concentration of ammoniacal liquor is 25 ~ 27%; Wash repeatedly with deionized water, high pure nitrogen dries up.
3. the preparation method of a kind of nanometer solar cell light trapping structure as claimed in claim 1; It is characterized in that: in the step 2; The mass percentage concentration of nano-graphite solution is 0.01%-0.15%, evenly drips on the silicon chip surface with dropper, when treating that surface solution forms the turbid state of glue; Get rid of evenly with sol evenning machine, under 80 ℃ of constant temperature, Tumble Dry at last.
4. the preparation method of a kind of nanometer solar cell light trapping structure as claimed in claim 1; It is characterized in that: in the step 3, utilize magnetron sputtering technique, at silicon chip surface sputtering silver film of handling well or aluminium film; As the catalyst of corrosion process, sedimentary condition: base vacuum 1.6 * 10
-4Pa, radio-frequency power is 50 W, and the argon gas with flow 80sccm under the room temperature is a protective gas, and strict control sputtering time is 5 ~ 10 nm with the thickness of controlling silver-colored film or aluminium film.
5. the preparation method of a kind of nanometer solar cell light trapping structure as claimed in claim 1; It is characterized in that: in the step 5; Utilize the ultrasonic cleaner of power,, contain 20g acetic acid in the mixed solution of every liter of acetic acid and deionized water the silicon chip that forms nano array structure sonic oscillation 20 minutes in the mixed solution of acetic acid and deionized water for 100W; And use deionized water rinsing repeatedly, dry.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103030100A (en) * | 2013-01-09 | 2013-04-10 | 华北电力大学 | Method for preparing sub-wavelength silicon nano-wire array with antireflection characteristic |
| CN105439083A (en) * | 2015-11-17 | 2016-03-30 | 杭州电子科技大学 | Method for making silicon micro-nano structure array based on ultrasonic standing wave field |
| CN107302040A (en) * | 2017-06-22 | 2017-10-27 | 烟台南山学院 | The preparation method of Ag nano wire light trapping structures is inlayed based on wet etching silicon face |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020074314A1 (en) * | 2000-11-27 | 2002-06-20 | The Board Of Trustees Of The University Of Illinois. | Metal-assisted chemical etch to produce porous group III-V materials |
| CN102102227A (en) * | 2010-11-18 | 2011-06-22 | 华北电力大学 | Preparation method of hydrophobic light trapping structure on silicon surface |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020074314A1 (en) * | 2000-11-27 | 2002-06-20 | The Board Of Trustees Of The University Of Illinois. | Metal-assisted chemical etch to produce porous group III-V materials |
| CN102102227A (en) * | 2010-11-18 | 2011-06-22 | 华北电力大学 | Preparation method of hydrophobic light trapping structure on silicon surface |
Non-Patent Citations (1)
| Title |
|---|
| 耿学文等: "薄膜太阳能电池硅衬底陷光结构的研究进展", 《功能材料》, vol. 41, no. 5, 31 May 2010 (2010-05-31), pages 751 - 754 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103030100A (en) * | 2013-01-09 | 2013-04-10 | 华北电力大学 | Method for preparing sub-wavelength silicon nano-wire array with antireflection characteristic |
| CN103030100B (en) * | 2013-01-09 | 2015-10-21 | 华北电力大学 | A kind of preparation method with the sub-wavelength silicon nanowire array of antireflection characteristic |
| CN105439083A (en) * | 2015-11-17 | 2016-03-30 | 杭州电子科技大学 | Method for making silicon micro-nano structure array based on ultrasonic standing wave field |
| CN107302040A (en) * | 2017-06-22 | 2017-10-27 | 烟台南山学院 | The preparation method of Ag nano wire light trapping structures is inlayed based on wet etching silicon face |
| CN107302040B (en) * | 2017-06-22 | 2018-11-20 | 烟台南山学院 | The preparation method of Ag nano wire light trapping structure is inlayed based on wet etching silicon face |
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Effective date of registration: 20170711 Address after: 512 room 8, building 180, 212000 Jingang Avenue, New District, Jiangsu, Zhenjiang Patentee after: JIANGSU HIGHWELL NEW ENERGY Co.,Ltd. Address before: Zhenjiang City, Jiangsu Province, 212013 Jingkou District Road No. 301 Patentee before: Jiangsu University |
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