CN104363011A - Over-current detection and protection circuit for IGBT (insulated gate bipolar transistor) - Google Patents
Over-current detection and protection circuit for IGBT (insulated gate bipolar transistor) Download PDFInfo
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- CN104363011A CN104363011A CN201410534730.XA CN201410534730A CN104363011A CN 104363011 A CN104363011 A CN 104363011A CN 201410534730 A CN201410534730 A CN 201410534730A CN 104363011 A CN104363011 A CN 104363011A
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Abstract
The invention discloses an over-current detection and protection circuit for an IGBT (insulated gate bipolar transistor). The over-current detection and protection circuit comprises an over-current detection module, a voltage stabilizing diode, an energy storage capacitor, a controlled switching current source, a driving unit, a plurality of resistors and a comparator. Voltages between collector electrodes and emitter electrodes are sampled by the over-current detection module when the IGBT is in an on state and are conditioned by the aid of an over-current protection threshold adjusting function of the over-current detection module, voltage signals can be outputted and are compared to reference voltages of the comparator, then action trigger signals can be outputted, enable and lock-up control on the driving unit can be implemented, and accordingly over-current protection actions can be executed by the driving unit. The over-current detection and protection circuit for the IGBT has the advantages that over-current protection thresholds of the IGBT can be continuously and accurately set and adjusted by the over-current detection and protection circuit, so that the IGBT can be used under the conditions of different over-current protection threshold requirements, and the over-current detection and protection circuit is applicable to IGBT devices with different specifications, convenient to adjust and high in portability.
Description
Technical field
The present invention relates to a kind of IGBT over-current detection and protective circuit, particularly relating to a kind of overcurrent protection threshold value can the IGBT over-current detection protective circuit of accurate setting and adjustment, belongs to field of power electronics.
Background technology
IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is a kind of semiconductor device common in Power Electronic Circuit and related device equipment.In the switching mode translation circuit of high-power, IGBT often bears larger electric current.IGBT overcurrent is the main cause causing IGBT device disabling damage.In actual application; due to reasons such as load overload, internal signal mistake, external disturbance; cause the electric current flowing through IGBT device sharply to increase, considerably beyond its capacity limit, now need to turn off IGBT device and protect, bad to avoid IGBT to be damaged.Overcurrent protection is not only directly connected to service behaviour and the security of operation of IGBT device itself, also has influence on performance and the safety of whole power unit system.The whether successful quality depending on current foldback circuit to a great extent of IGBT application.
From voltage-current characteristic during IGBT conducting, voltage during IGBT conducting is relevant with the size of current that it flows through, when IGBT overcurrent or short circuit, and its on state voltage U
cea certain higher level value can be risen to, therefore, once IGBT overcurrent, U
cecan increase along with the increase of collector current.Existing IGBT over-current detection and guard method are exactly according to this characteristic, by detecting U
cejudge IGBT whether overcurrent, by U
cethe threshold voltage of voltage and setting compares and generates overcurrent protection signal and block drive circuit, realizes overcurrent protection.This over-current detecting method is referred to as to move back saturation detection.
But existing IGBT over-current detection and the following problem of guard method ubiquity: 1. current foldback circuit is once design, the threshold value of its overcurrent protection just cannot regulate, and the IGBT device of different size often needs different over-current protection point (U
ce) just can protect reliably.Existing method needs to design different protective circuits for different components, is not easy to graft application; 2. the change of the environmental factor such as temperature can cause the change of IGBT over-current protection point; 3. in practical application in order to improve reliability, a lot of circuit and apparatus system often adopt " fall to hold and use " power device, need to lower overcurrent protection threshold value, namely take protection in advance lower than specified flow point of crossing.Therefore the action threshold value requiring accurately to set or adjust IGBT over-current protection point according to the condition of work of IGBT device is needed.
Summary of the invention
The object of the invention is the problem being not easy to graft application for over-current detection protective circuit in prior art, threshold value cannot regulate, provide a kind of can accurately the IGBT over-current detection of setting and adjustment overcurrent protection threshold value and protective circuit.
The over-current detection of a kind of IGBT of the present invention and protective circuit, comprising: over-current detection module, voltage stabilizing didoe ZD1, storage capacitor C1, controlled switch current source, driver element, resistance R8, resistance R9 and comparator;
Described over-current detection module, comprises variable resistor R5, thermistor RT, resistance R1, resistance R2, resistance R3, resistance R4, resistance R6, resistance R7, diode D1, diode D2, triode Q1, triode Q2, three ends source of stable pressure Q3 able to programme; One end of resistance R1 is connected with the output of the negative electrode of diode D1, the negative input end of comparator and controlled switch current source, the other end of resistance R1 is connected with the base stage of triode Q1, the collector electrode of triode Q1 is connected with one end of resistance R2, the emitter of triode Q1 is connected with one end of the anode of diode D2 and thermistor RT, and the negative electrode of diode D2 is the link be connected with IGBT collector electrode; The collector electrode of triode Q2 is connected with the anode of one end of resistance R3 and diode D1, the base stage of triode Q2 is connected with one end of resistance R4, the positive pole of one end of the emitter of triode Q2 and the anode of three ends source of stable pressure Q3 able to programme, resistance R6, one end of resistance R9, the negative electrode of voltage stabilizing didoe ZD1 and storage capacitor C1 is connected, and this tie point is the link be connected with the emitter of IGBT; The negative electrode of three ends source of stable pressure Q3 able to programme is connected with the other end of resistance R4 and one end of resistance R7, the reference edge of three ends source of stable pressure Q3 able to programme is connected with one end of variable resistor R5 and the other end of resistance R6, and the other end of variable resistor R5 is connected with the other end of thermistor RT; The other end of the input of controlled switch current source, the other end of resistance R2, the other end of resistance R3, the other end of resistance R9 and resistance R7 is all connected with the VCC that just powers; The switch terminals of controlled switch current source is connected with current source control signal end, and the positive input terminal of comparator connects reference voltage source V
ref, the output of comparator is connected with the Enable Pin of driver element, and the input of driver element is connected with drive singal end, and output is connected with one end of resistance R8, and the other end of resistance R8 is the link be connected with the grid of IGBT; The anode of voltage stabilizing didoe ZD1 and the minus earth of storage capacitor C1.
In technique scheme, described three ends source of stable pressure Q3 able to programme can adopt TL431 chip.
In IGBT over-current detection of the present invention and protective circuit, collector electrode C, the emitter E of over-current detection module and IGBT are connected, to the voltage U between collector electrode C during IGBT conducting state and emitter E
cesample, through overcurrent detection module with overcurrent protection threshold value regulatory function conditioning after, export V
detectsignal, V
detectsignal accesses comparator negative input end again, with comparator reference voltage V
refoutput action triggering signal relatively, its output is connected with driver element, and realize the enable of driver element and block control, driver element performs overcurrent protection action.
In the present invention, when drive singal is high level (namely IGBT is open-minded), current source control signal is enable, and controlled switch current source Is produces the small electric stream of about 1mA.Current source produce small area analysis due to amplitude is too low usually can not directly as the bias current of diode D2, according to the voltage-current characteristic of diode, when On current is too small, the minor variations of On current can cause the larger fluctuation of N, can directly cause IGBT on state voltage U
cesampling precision reduce.Therefore, the present invention adds the bias current amplifying circuit that one-level is made up of triode Q1 and current-limiting resistance R1, R2 after current source Is, the small area analysis directly produced by current source carries out suitable amplification, obtain larger ensured diode D2 and produce the bias current stablizing conduction voltage drop, to reduce, because of the metrical error caused by the conducting voltage fluctuation of sampling diode D2, to improve accuracy of detection further.
Adjustable resistance R5 and fixed value resistance R6 forms resitstance voltage divider, dividing potential drop conditioning is carried out to the IGBT conducting voltage obtained of sampling through diode D2, voltage after conditioning inputs the reference edge of three ends source of stable pressure Q3 able to programme, the voltage reference built-in with Q3 compares, turning on and off between control Q3 negative electrode, anode, by changing the size of adjustable resistance R5, can change and cause the threshold voltage U that switch motion occurs Q3
ce, th, therefore, by arranging suitable R5, the continuous setting to overcurrent protection threshold value can be realized.
When Q3 turns off, switch triode Q2 is open-minded, is now input to the detection signal V of comparator negative input end through diode D1
detectbe approximately 0; When Q3 opens, switch triode Q2 turns off, and is now input to the detection signal V of comparator negative input end through diode D1
detectbe approximately VCC, therefore, the detection signal exported through this link is only 0 or VCC (ignoring the conduction voltage drop of diode and the saturation conduction pressure drop of triode), there will not be V
detectvoltages approach reference voltage source V
reftime the comparator negative input end interference voltage introduced cause the situation of comparator misoperation, ensure that the action message of comparator, substantially increase the antijamming capability detecting protective circuit.
When IGBT normally works, the voltage V on comparator negative input end
detect≈ 0 is less than comparator built-in reference voltage source voltage V
ref(can by V
refbe arranged at
place), comparator exports high level, and driver element is enable, and drive singal normally exports; When IGBT overcurrent or short trouble occur, V
detect≈ VCC is greater than V
ref, comparator output low level, blocks driver element, turns off IGBT, to realize overcurrent protection action.In addition, connect one in the resitstance voltage divider that adjustable resistance R5 and fixed value resistance R6 are formed and there is the thermistor RT of temperature characterisitic, can realize the temperature-compensating of IGBT overcurrent protection threshold value and the overheat protector to IGBT; Adopt voltage-stabiliser tube ZD1 can be IGBT gate leve in parallel with storage capacitor C1 to provide the shutoff negative pressure of-5V, to ensure that IGBT realizes reliable turn-off, avoid the interference voltage of gate pole parasitic couplings to cause IGBT to open by mistake logical.
Beneficial effect of the present invention is: IGBT over-current detection of the present invention and protective circuit can accurately set and adjust the overcurrent protection threshold value of IGBT continuously, thus meet the use of IGBT under different overcurrent protection threshold requirement, and go for the IGBT device of different size, easy to adjust, transplantability is strong; By adopting thermistor RT, can realize the negative-feedback regu-lation of overcurrent protection threshold value, namely the excess temperature derate, overheat protector etc. of IGBT, improve the intelligent of current foldback circuit.
Accompanying drawing explanation
Fig. 1 is that overcurrent protection threshold value can the IGBT over-current detection protective circuit figure of accurate setting and adjustment.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described further, in order to avoid causing unnecessary obscuring to essence of the present invention, do not describe well-known method, process, flow process, element and circuit etc. in detail.
As shown in Figure 1, the over-current detection of IGBT and protective circuit, comprising: over-current detection module, voltage stabilizing didoe ZD1, storage capacitor C1, controlled switch current source Is, driver element B, resistance R8, resistance R9 and comparator A;
Described over-current detection module, comprises variable resistor R5, thermistor RT, resistance R1, resistance R2, resistance R3, resistance R4, resistance R6, resistance R7, diode D1, diode D2, triode Q1, triode Q2, three ends source of stable pressure Q3 able to programme; One end of resistance R1 is connected with the negative input end of the negative electrode of diode D1, comparator A and the output of controlled switch current source Is, the other end of resistance R1 is connected with the base stage of triode Q1, the collector electrode of triode Q1 is connected with one end of resistance R2, the emitter of triode Q1 is connected with one end of the anode of diode D2 and thermistor RT, and the negative electrode of diode D2 is the link be connected with IGBT collector electrode C; The collector electrode of triode Q2 is connected with the anode of one end of resistance R3 and diode D1, the base stage of triode Q2 is connected with one end of resistance R4, the positive pole of one end of the emitter of triode Q2 and the anode 3 of three ends source of stable pressure Q3 able to programme, resistance R6, one end of resistance R9, the negative electrode of voltage stabilizing didoe ZD1 and storage capacitor C1 is connected, and this tie point is the link be connected with the emitter E of IGBT; The negative electrode 2 of three ends source of stable pressure Q3 able to programme is connected with the other end of resistance R4 and one end of resistance R7, the reference edge 1 of three ends source of stable pressure Q3 able to programme is connected with one end of variable resistor R5 and the other end of resistance R6, and the other end of variable resistor R5 is connected with the other end of thermistor RT; The other end of the input of controlled switch current source Is, the other end of resistance R2, the other end of resistance R3, the other end of resistance R9 and resistance R7 is all connected with the VCC that just powers; The switch terminals of controlled switch current source Is is connected with current source control signal end, and the positive input terminal of comparator A connects reference voltage source V
ref, the output of comparator A is connected with the Enable Pin ENB of driver element B, and the input of driver element is connected with drive singal end, and output is connected with one end of resistance R8, and the other end of resistance R8 is the link be connected with the grid G of IGBT; The anode of voltage stabilizing didoe ZD1 and the minus earth of storage capacitor C1.
When IGBT is in off state, controlled switch current source Is turns off, not output current, U
cevoltage is DC bus-bar voltage, and far above detection reference voltage, diode D2 ends, and over-current detection function is closed.
When IGBT is in opening state, current source control signal is enable, and Is is open-minded for controlled switch current source, and output current flows into the base stage of triode Q1, and triode Q1 and resistance R1, R2 constitute bias current amplifying circuit, the electric current I after amplification
d=(1+ β) I
s, I
dfor the bias current in diode D2 real work.Through amplifying, the bias current I that numerical value is larger
dfor diode D2 provides suitable bias current and working point thereof, ensure its conduction voltage drop V
dfor stationary value.
Voltage-stabiliser tube ZD1 and storage capacitor C1 in parallel are for driving the shutoff negative pressure providing-5V.This configuration reduces the power supply value volume and range of product that drive circuit needs, namely whole Drive Protecting Circuit only needs a road Power supply.
Overcurrent protection threshold value setting means, in the present embodiment, R5, R6 form resitstance voltage divider, carry out dividing potential drop conditioning, the voltage V after conditioning to the sampled voltage through diode D2
athe reference edge pin 1 of input Q3, with Q3 built-in voltage benchmark V
rTcompare, turning on and off between control Q3 negative electrode 2 and anode 3 (works as V
a> V
rTtime, Q3 is open-minded; Work as V
a< V
rTtime, Q3 turns off), the threshold voltage U corresponding to overcurrent protection threshold value
ce, thcomputing formula as follows:
Wherein, V
rTfor the built-in reference voltage of Q3, V
dfor the conduction voltage drop of diode D2, R
5, R
6and R
tbe respectively the resistance of adjustable resistance R5, resistance R6 and thermistor RT.
According to above formula, by changing the size of adjustable resistance R5, threshold voltage U can be changed
ce, th, R
5increase, threshold voltage U
ce, thraise, therefore realize the continuous setting to overcurrent protection threshold value.
The specific works process of the IGBT over-current detection protective circuit of this example is as follows:
Work as U
ce< U
ce, thtime, through the sampled voltage of diode D2 after resistance R5, R6 dividing potential drop, Q3 anode 3 is low level, and Q3 turns off, and the base stage of switch triode Q2 is pulled to high level by pull-up resistor R7, and switch triode Q2 is open-minded, and diode D1 anode is low level, i.e. V
detectfor low level, be less than V
ref, now protection act module exports high level, and driver element is enable, and IGBT normally works.
Work as U
ce> U
ce, thtime, through the sampled voltage of diode D2 after resistance R5, R6 dividing potential drop, Q3 anode 3 is high level, and Q3 is open-minded, and the base stage of switch triode Q2 is drawn as low level by Q3, and switch triode Q2 turns off, and diode D1 anode is pulled to high level VCC through pull-up resistor R2, V
detect=VCC-V
d(usually set V
ref< VCC-V
d, ensure that comparator reliably overturns), now V
detectbe less than V
ref, protection act module output low level, block driver element, driver output drags down, and IGBT turns off, and realize the overcurrent protection to IGBT, whole process is realized by hardware circuit completely, overcurrent protection fast response time.
Claims (1)
1. the over-current detection of IGBT and a protective circuit, is characterized in that comprising: over-current detection module, voltage stabilizing didoe ZD1, storage capacitor C1, controlled switch current source (Is), driver element (B), resistance R8, resistance R9 and comparator (A);
Described over-current detection module, comprises variable resistor R5, thermistor RT, resistance R1, resistance R2, resistance R3, resistance R4, resistance R6, resistance R7, diode D1, diode D2, triode Q1, triode Q2, three ends source of stable pressure Q3 able to programme; One end of resistance R1 is connected with the negative input end of the negative electrode of diode D1, comparator (A) and the output of controlled switch current source (Is), the other end of resistance R1 is connected with the base stage of triode Q1, the collector electrode of triode Q1 is connected with one end of resistance R2, the emitter of triode Q1 is connected with one end of the anode of diode D2 and thermistor RT, and the negative electrode of diode D2 is the link be connected with IGBT collector electrode (C); The collector electrode of triode Q2 is connected with the anode of one end of resistance R3 and diode D1, the base stage of triode Q2 is connected with one end of resistance R4, the positive pole of one end of the emitter of triode Q2 and the anode (3) of three ends source of stable pressure Q3 able to programme, resistance R6, one end of resistance R9, the negative electrode of voltage stabilizing didoe ZD1 and storage capacitor C1 is connected, and this tie point is the link be connected with the emitter of IGBT (E); The negative electrode (2) of three ends source of stable pressure Q3 able to programme is connected with the other end of resistance R4 and one end of resistance R7, the reference edge (1) of three ends source of stable pressure Q3 able to programme is connected with one end of variable resistor R5 and the other end of resistance R6, and the other end of variable resistor R5 is connected with the other end of thermistor RT; The other end of the input of controlled switch current source (Is), the other end of resistance R2, the other end of resistance R3, the other end of resistance R9 and resistance R7 is all connected with the VCC that just powers; The switch terminals of controlled switch current source (Is) is connected with current source control signal end, the positive input terminal of comparator (A) connects reference voltage source, the output of comparator (A) is connected with the Enable Pin (ENB) of driver element (B), the input of driver element is connected with drive singal end, output is connected with one end of resistance R8, and the other end of resistance R8 is the link be connected with the grid of IGBT (G); The anode of voltage stabilizing didoe ZD1 and the minus earth of storage capacitor C1.
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|---|---|---|---|
| CN201410534730.XA CN104363011A (en) | 2014-10-11 | 2014-10-11 | Over-current detection and protection circuit for IGBT (insulated gate bipolar transistor) |
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|---|---|---|---|
| CN201410534730.XA CN104363011A (en) | 2014-10-11 | 2014-10-11 | Over-current detection and protection circuit for IGBT (insulated gate bipolar transistor) |
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| CN105116184A (en) * | 2015-09-18 | 2015-12-02 | 江苏中科君芯科技有限公司 | IGBT (Insulated Gate Bipolar Transistor) dynamic test latch protection circuit |
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| CN107094007A (en) * | 2017-03-08 | 2017-08-25 | 全球能源互联网研究院 | A kind of IGBT over-current protection methods and device |
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| WO2019084899A1 (en) * | 2017-11-03 | 2019-05-09 | Dialog Semiconductor (Uk) Limited | Switch driver |
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| CN112345908A (en) * | 2020-10-27 | 2021-02-09 | 郑州嘉晨电器有限公司 | Current detection circuit of power switch tube |
| CN113258917A (en) * | 2021-07-13 | 2021-08-13 | 广州市保伦电子有限公司 | Control device for monitoring and protecting electric equipment |
| CN117879561A (en) * | 2023-12-29 | 2024-04-12 | 无锡市稳先微电子有限公司 | Intelligent electronic switch, integrated circuit chip, chip product and electronic equipment |
| CN107659296B (en) * | 2017-10-31 | 2024-07-12 | 中国铁道科学研究院 | IGBT overcurrent protection circuit and method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040252432A1 (en) * | 2003-06-13 | 2004-12-16 | Hitachi, Ltd. | Protection circuit for power management semiconductor devices and power converter having the protection circuit |
| CN102035191A (en) * | 2010-12-28 | 2011-04-27 | 广东易事特电源股份有限公司 | Igbt module over-temperature protection circuit |
| CN102064535A (en) * | 2010-12-01 | 2011-05-18 | 深圳市蓝韵实业有限公司 | Insulated gate bipolar transistor overcurrent protection self-recovering circuit |
-
2014
- 2014-10-11 CN CN201410534730.XA patent/CN104363011A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040252432A1 (en) * | 2003-06-13 | 2004-12-16 | Hitachi, Ltd. | Protection circuit for power management semiconductor devices and power converter having the protection circuit |
| CN102064535A (en) * | 2010-12-01 | 2011-05-18 | 深圳市蓝韵实业有限公司 | Insulated gate bipolar transistor overcurrent protection self-recovering circuit |
| CN102035191A (en) * | 2010-12-28 | 2011-04-27 | 广东易事特电源股份有限公司 | Igbt module over-temperature protection circuit |
Non-Patent Citations (2)
| Title |
|---|
| 王志升: "大功率电磁炉电控系统设计与实现", 《中国优秀硕士学位论文全文数据库工程科技Ⅱ辑》 * |
| 赵渝青: "简单实用的IGBT保护电路", 《电气开关》 * |
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Application publication date: 20150218 |