CN104362231A - LED (Light Emitting Diode) with localized horizontally-arranged 1DZnO micro-nano structure array - Google Patents
LED (Light Emitting Diode) with localized horizontally-arranged 1DZnO micro-nano structure array Download PDFInfo
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- CN104362231A CN104362231A CN201410733725.1A CN201410733725A CN104362231A CN 104362231 A CN104362231 A CN 104362231A CN 201410733725 A CN201410733725 A CN 201410733725A CN 104362231 A CN104362231 A CN 104362231A
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- 230000004807 localization Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 claims description 7
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 7
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 7
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 238000004020 luminiscence type Methods 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 2
- 238000000352 supercritical drying Methods 0.000 claims description 2
- 238000003786 synthesis reaction Methods 0.000 claims description 2
- 238000009960 carding Methods 0.000 abstract 3
- 229910002601 GaN Inorganic materials 0.000 description 17
- 238000010586 diagram Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002493 microarray Methods 0.000 description 1
- 238000012576 optical tweezer Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses an LED (Light Emitting Diode) with a localized horizontally-arranged 1DZnO micro-nano structure array, which can be used for realizing the localized horizontally-arranged 1DZnO micro-nano structure array. The LED is characterized in that a carding structure is prepared; and an imaged vertically-arranged ZnO micro-nano structure array is converted into the 1DZnO micro-nano structure array, which is horizontally arranged and has controllable horizontal orientation, by the carding structure. Compared with the prior art, the conversion of the vertical 1DZnO micro-nano structure array to the arrangement with the controllable horizontal orientation is realized by the carding structure so that the large-area and large-batch horizontally-arranged 1DZnO micro-nano structure array can be obtained; the orientation deviation angle can be up to 0.3-2.3 degrees; and a novel method for integrated and large-batch manufacturing of the LED or other light emitting devices is provided.
Description
Technical field
The present invention relates to the manufacture method of a kind of localization horizontal ZnO micro nano structure array LED.
Background technology
In recent years, micro-nano scientific technological advance is rapid, in industrialization, achieved many progress.But, realize high density, scale micro nano structure batch handle be realize chip device to have one of challenging key factor.As everyone knows, utilize optical tweezer technology can realize single micro nano structure and handle, but the manipulation of large area array is consuming time.Realize high density in chip, the manufacture of the micro-nano array of scale 1D specific aligned orientation is the integrated vital challenge of device.Up to now, few quantifier elimination is had to report: the preparation of horizontal micron and nano array can be realized by the flowing etc. of confinement growth, conveying gas.But, also do not have research report can realize the manipulation of p-type gallium nitride (GaN) upper large area ZnO microarray direction initialization, periodic distribution in horizontal plane at present, and utilize micrometer structure to develop the potential function of LED component in chip.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of manufacture method of horizontal ZnO micro nano structure array LED.
The present invention is achieved through the following technical solutions:
The manufacture method of localization horizontal 1D ZnO micro nano structure array, the ZnO micro nano structure array of synthesis vertical arrangement, preparation combing structure, utilize combing structure by array switching for the ZnO micro nano structure of vertical arrangement be horizontal ZnO micro nano structure array.
Further at the photoresist that quartz glass wafer spin coating 1 μm is thick, then at 95 DEG C, 5min is cured, patterned mask plate is utilized to carry out vacuum and firmly contact constant UV exposure 45s, through development, nitrogen drying, toast 5min at 120 DEG C, the groove matched with graphical 1D ZnO micro nano structure array is formed on photoresist surface, form combing structure, the ZnO micro nano structure one_to_one corresponding of described groove and vertical arrangement.Consider and realize the less ZnO nano-structure of diameter (diameter: 10 nanometer ~ 100 nanometers) array horizontally, combing structure can adopt the electron beam adhesive (PMMA or HSQ) that resolution is higher.
Further, combing structure is as mask plate, the ZnO micro nano structure array of vertical arrangement is as substrate, by mask plate and substrate load on the mask aligner equipment with nano impression function, can realize planar moving combing structure by mobile mask plate filling structure, utilize substrate load structure can realize the adjustment of substrate, the 1D ZnO micro nano structure array of vertical arrangement and the aligning of combing structure is realized under the microscope with mark, make the ZnO micro nano structure top portion other places of each root vertical arrangement in the groove of combing structure, then regulating combing structure makes ZnO micro nano structure top be in the groove of combing structure completely, by finely tuning combing structure and then realizing horizontal ZnO micro nano structure array at x, y or simultaneously regulate x, y tilts to realize the arbitrary orientation of ZnO micro nano structure array in horizontal plane, horizontal with the localization realizing ZnO micro nano structure by the active force applying vertical force on mask plate filling structure, the 1D ZnO micro nano structure array that final formation different orientation is horizontal.
Further, first in the sapphire p-GaN layer of p-GaN/, mask pattern is done: clean with deionized water after with an organic solvent p-GaN/ sapphire being cleaned, the PMMA that the rotary speed thickness carried out 40 seconds with 3000rpm is 100nm, it is toasted 2min at 180 DEG C, be cooled to room temperature, then the p-GaN/ sapphire of electron beam adhesive spin coating is had to load the chamber of electron-beam direct writing, use high pressure 20KV, bundle spot 10nm, the light beam of line 0.279nA exposes, after exposure, develop with MIBK/IPA, MIBK and IPA weight ratio is 1:3, development temperature 20 DEG C, 40 seconds time, then rinsing rinsing in isopropyl alcohol used nitrogen drying after 30 seconds, then the p-GaN/ sapphire after electron beam adhesive is graphical utilizes hydro thermal method carry out ZnO micro nano structure and grow the 1D ZnO micro nano structure array obtaining vertical arrangement.
Further, in reaction vessel, add the Zn (CH of 0.02mol/L
3cOO)
2with the C of 0.02mol/L
6h
12n
4solution, the p-GaN layer orientating reaction container bottoms exposed, reaction vessel is placed in baking oven, remain on 95 DEG C and keep 16h, by the sample IPA rinsing obtained, and dry in critical point drying instrument, namely complete the growth of graphical 1D ZnO micro nano structure, obtain the ZnO micro nano structure array of vertical arrangement.
The LED manufacture method of localization horizontal 1D ZnO micro nano structure array, the 1D ZnO micro nano structure array gap utilizing PMMA fill level to arrange, utilize oxygen plasma to realize horizontal ZnO micro nano structure top to come out, utilize ITO conductive layer as the electrode of ZnO micro nano structure, Ni/Au, as the Ohm contact electrode of p-GaN layer, is driven by external electric field and realizes the horizontal heterogeneous luminescence meeting LED of ZnO micro nano structure array/p-GaN.
Combing structure technology can realize the conversion of other vertical orientated 1D micro nano structures any to horizontal micro nano structure array, and its horizontal micro nano structure array prepared can be used for transreplication, the mass preparation of other photoelectric devices.
Compared with prior art, the present invention utilizes combing structure to achieve vertical Z nO micro nano structure array and changes to horizontal ZnO micro nano structure array, the large area obtained, mass horizontal ZnO micro nano structure array, its orientating deviation angle between 0.3 ° to 2.3 °, for the Integrated manufacture of LED or other photoelectric devices proposes a kind of new method.
Accompanying drawing explanation
Fig. 1 is that vertical arrangement 1D ZnO micro nano structure array is to the array switching schematic diagram of horizontal 1D ZnO micro nano structure;
Fig. 2 is combing structure chart;
Fig. 3 is different angles horizontal alignment 1D ZnO micrometer structure arrayed schematic diagram;
Fig. 4 be 1D horizontal ZnO micro nano structure array turn/P-GaN is heterogeneous connects LED schematic diagram;
Fig. 5 is that 1D horizontal ZnO micro nano structure array makes separately electrode drive schematic diagram.
1: combing structure, 2:1D vertical arrangement ZnO micrometer structure, 3:p-GaN layer, 4: sapphire substrates, 5: electrode, 6:1D ZnO micrometer structures, 7: lead-in wire.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described:
1, the ZnO micro nano structure array of vertical arrangement is prepared
The PMMA that the rotary speed thickness that the sapphire p-GaN layer of p-GaN/ is carried out 40 seconds with 3000rpm is 100nm, p-GaN/ sapphire is loaded the DirectWrite chamber of EBL, and clean with deionized water after with an organic solvent p-GaN/ sapphire being cleaned, then it is toasted 2min at 180 DEG C, be cooled to room temperature, with 20 kilovolts, 10nm, the light beam of 0.279nA exposes, after exposure, develop with MIBK/IPA, MIBK:IPA weight ratio is 1:3, development temperature 20 DEG C, 40 seconds time, then rinsing rinsing in isopropyl alcohol used nitrogen drying after 30 seconds.
Zn (the CH of 0.02mol/L is added in reaction vessel
3cOO)
2with the C of 0.02mol/L
6h
12n
4solution, the p-GaN layer orientating reaction container bottoms of exposure, is placed in baking oven by reaction vessel, remain on 95 DEG C of 16h, by the sample rinsed with deionized water obtained, and namely drying completes the growth of ZnO micro nano structure in an oven, obtains the ZnO micro nano structure array of vertical arrangement.
2, combing structure is prepared
At the photoresist that quartz glass wafer spin coating 1 μm is thick, then at 95 DEG C, 5min is cured, patterned mask plate is utilized to carry out vacuum and firmly contact constant UV exposure 45s, through development, nitrogen drying, toast 5min at 120 DEG C, form on photoresist surface the groove matched with ZnO micro nano structure, obtain combing structure as shown in Figure 2.
3, horizontal ZnO micro nano structure array is prepared
Combing structure is as mask plate, the ZnO micro nano structure array of vertical arrangement is as substrate, by mask plate and substrate load on nano-imprinting apparatus, can realize planar moving combing structure by mobile mask plate filling structure, utilize substrate load structure can realize the adjustment of substrate, the ZnO micro nano structure of vertical arrangement and the aligning of combing structure is realized under the microscope with mark, make the ZnO micro nano structure top portion other places of each root vertical arrangement in the groove of combing structure, then regulating combing structure makes ZnO micro nano structure top be in the groove of combing structure completely, by finely tuning combing structure and then realizing horizontal ZnO micro nano structure array at x, y or simultaneously regulate x, y tilts to realize the arbitrary orientation of ZnO micro nano structure array in horizontal plane, by applying the active force of vertical force to realize the horizontal of ZnO micro nano structure on mask plate filling structure, final formation differing tilt angles and horizontal 1D ZnO micro nano structure array, its process as shown in Figure 1, by regulating combing structure x in horizontal plane, the movement in y direction can realize the different orientation of the 1D ZnO micro nano structure array of 90 degree and 45 degree horizontal alignments, as shown in Figure 3.
4, LED is prepared
The LED manufacture method of localization horizontal 1D ZnO micro nano structure array, the 1D ZnO micro nano structure array gap utilizing PMMA fill level to arrange, utilize oxygen plasma to realize horizontal ZnO micro nano structure top to come out, utilize ITO conductive layer as the electrode of ZnO micro nano structure, Ni/Au is as the Ohm contact electrode of p-GaN layer, driven by external electric field and realize the horizontal heterogeneous luminescence meeting LED of ZnO micro nano structure array/p-GaN, as shown in Figure 4.
The horizontal 1D micro nano structure of localization can realize the large area manufacture of each root micro/nano-scale structure electrode, thus really realizes the independent electric drive of the micro-nano array of 1D, as shown in Figure 5.
All simple distortion of making when not departing from core of the present invention or amendment all fall into protection scope of the present invention.
Claims (6)
1. the manufacture method of localization horizontal 1D ZnO micro nano structure array, the ZnO micro nano structure array of synthesis vertical arrangement, it is characterized in that, preparation combing structure, utilize combing structure by array switching for the ZnO micro nano structure of vertical arrangement be horizontal ZnO micro nano structure array.
2. the manufacture method of localization according to claim 1 horizontal 1D ZnO micro nano structure array, it is characterized in that, at the photoresist that quartz glass wafer spin coating 1 μm is thick, then at 95 DEG C, 5min is cured, patterned mask plate is utilized to carry out vacuum and firmly contact constant UV exposure 45s, through development, nitrogen drying, toast 5min at 120 DEG C, the groove matched with graphical 1D ZnO micro nano structure array is formed on photoresist surface, form combing structure, the ZnO micro nano structure one_to_one corresponding of described groove and vertical arrangement.
3. the manufacture method of localization according to claim 1 horizontal 1D ZnO micro nano structure array, it is characterized in that, combing structure is as mask plate, the ZnO micro nano structure array of vertical arrangement is as substrate, by mask plate and substrate load on the mask aligner equipment with nano impression function, can realize planar moving combing structure by mobile mask plate filling structure, utilize substrate load structure can realize the adjustment of substrate, the 1D ZnO micro nano structure array of vertical arrangement and the aligning of combing structure is realized under the microscope with mark, make the ZnO micro nano structure top portion other places of each root vertical arrangement in the groove of combing structure, then regulating combing structure makes ZnO micro nano structure top be in the groove of combing structure completely, by finely tuning combing structure and then realizing horizontal ZnO micro nano structure array at x, y or simultaneously regulate x, y tilts to realize the arbitrary orientation of ZnO micro nano structure array in horizontal plane, horizontal with the localization realizing ZnO micro nano structure by the active force applying vertical force on mask plate filling structure, the 1D ZnO micro nano structure array that final formation different orientation is horizontal.
4. the manufacture method of the horizontal 1D ZnO of the localization according to any one of claim 1-3 micro nano structure array, it is characterized in that, first in the sapphire p-GaN layer of p-GaN/, mask pattern is done: clean with deionized water after with an organic solvent p-GaN/ sapphire being cleaned, the PMMA that the rotary speed thickness carried out 40 seconds with 3000rpm is 100nm, it is toasted 2min at 180 DEG C, be cooled to room temperature, then the p-GaN/ sapphire of electron beam adhesive spin coating is had to load the chamber of electron-beam direct writing, use high pressure 20KV, bundle spot 10nm, the light beam of line 0.279nA exposes, after exposure, develop with MIBK/IPA, MIBK and IPA weight ratio is 1:3, development temperature 20 DEG C, 40 seconds time, then rinsing rinsing in isopropyl alcohol used nitrogen drying after 30 seconds, then the p-GaN/ sapphire after electron beam adhesive is graphical utilizes hydro thermal method carry out ZnO micro nano structure and grow the 1D ZnO micro nano structure array obtaining vertical arrangement.
5. the manufacture method of localization according to claim 4 horizontal 1D ZnO micro nano structure array, is characterized in that, adds the Zn (CH of 0.02mol/L in reaction vessel
3cOO)
2with the C of 0.02mol/L
6h
12n
4solution, the p-GaN layer orientating reaction container bottoms exposed, reaction vessel is placed in baking oven, remain on 95 DEG C and keep 16h, by the sample IPA rinsing obtained, and dry in critical point drying instrument, namely complete the growth of graphical 1D ZnO micro nano structure, obtain the ZnO micro nano structure array of vertical arrangement.
6. the LED manufacture method of localization horizontal 1D ZnO micro nano structure array, it is characterized in that, the 1D ZnO micro nano structure array gap utilizing PMMA fill level to arrange, utilize oxygen plasma to realize horizontal ZnO micro nano structure top to come out, utilize ITO conductive layer as the electrode of ZnO micro nano structure, Ni/Au, as the Ohm contact electrode of p-GaN layer, is driven by external electric field and realizes the horizontal heterogeneous luminescence meeting LED of ZnO micro nano structure array/p-GaN.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410733725.1A CN104362231A (en) | 2014-12-05 | 2014-12-05 | LED (Light Emitting Diode) with localized horizontally-arranged 1DZnO micro-nano structure array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410733725.1A CN104362231A (en) | 2014-12-05 | 2014-12-05 | LED (Light Emitting Diode) with localized horizontally-arranged 1DZnO micro-nano structure array |
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|---|---|
| CN104362231A true CN104362231A (en) | 2015-02-18 |
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|---|---|---|---|
| CN201410733725.1A Pending CN104362231A (en) | 2014-12-05 | 2014-12-05 | LED (Light Emitting Diode) with localized horizontally-arranged 1DZnO micro-nano structure array |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005054869A1 (en) * | 2003-12-08 | 2005-06-16 | Postech Foundation | Biosensor comprising zinc oxide-based nanorod and preparation thereof |
| CN103183373A (en) * | 2013-04-18 | 2013-07-03 | 四川大学 | Horizontal array ZnO nano-wire and preparation method thereof |
-
2014
- 2014-12-05 CN CN201410733725.1A patent/CN104362231A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005054869A1 (en) * | 2003-12-08 | 2005-06-16 | Postech Foundation | Biosensor comprising zinc oxide-based nanorod and preparation thereof |
| CN103183373A (en) * | 2013-04-18 | 2013-07-03 | 四川大学 | Horizontal array ZnO nano-wire and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| GUO Z ET AL.: "Large-Scale Horizontally Aligned ZnO Microrod Arrays with Controlled Orientation, Periodic Distribution as Building Blocks for Chip-in Piezo-Phototronic LEDs", 《SMALL》 * |
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Application publication date: 20150218 |