CN104362229A - Wide-band high-extraction-rate LED chip structure and design method thereof - Google Patents
Wide-band high-extraction-rate LED chip structure and design method thereof Download PDFInfo
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- CN104362229A CN104362229A CN201410678856.4A CN201410678856A CN104362229A CN 104362229 A CN104362229 A CN 104362229A CN 201410678856 A CN201410678856 A CN 201410678856A CN 104362229 A CN104362229 A CN 104362229A
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000013461 design Methods 0.000 title abstract description 8
- 239000004038 photonic crystal Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 238000000605 extraction Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 6
- 239000010980 sapphire Substances 0.000 claims abstract description 6
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000011084 recovery Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005329 nanolithography Methods 0.000 description 1
- 238000013386 optimize process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
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- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention belongs to the technical field of LEDs and particularly provides a wide-band high-extraction-rate LED chip structure and a design method thereof. The wide-band high-extraction-rate LED chip structure comprises a DBR reflection layer, a sapphire substrate, a buffer layer, an n-type semiconductor layer, a multiple-quantum well layer and a p-type semiconductor layer sequentially from bottom to top, wherein a squarely latticed taper photonic crystal array is designed in the p-type semiconductor layer. A simple taper photonic crystal structure is designed on the p-type semiconductor layer by means of a limited time-domain difference method, so that the light extraction rate of a chip is remarkably improved, and especially in a 460 mm blue light wave band range, the effect is remarkable and improved to 14 times. The wide-band high-extraction-rate LED chip structure is low in manufacturing cost and low in machining difficulty, integrates with an existing ITO transparent electrode, a current diffusion layer, a patterned substrate, the DBR reflection layer and other technologies to greatly improve the LED light efficiency, can greatly reduce unit lumen cost and remarkably prolongs the service life of the LEDs.
Description
Technical field
The invention belongs to LED technology field, be specifically related to a kind of LED chip structure and method for designing thereof of wideband high extraction.
Background technology
With the develop rapidly of semiconductor technology, LED, as a kind of New Solid energy (SSL), has energy consumption low, driving voltage is low, stablizes applicability strong, pollution-free, be convenient to light modulation toning, life-span length waits many merits, makes it have application prospect widely, such as throws light on, medical treatment, and visible light communication field, especially in white-light illuminating field, progressively start to replace conventional light source.
Because luminous efficiency is not high, cause the cost of unit lumen to be difficult to reduce, this has become the bottleneck affecting LED development.The luminous efficiency of further raising LED has become very powerful and exceedingly arrogant problem.Along with the continuous progress of substrate technology, lattice quality significantly promotes, radiation recombination is significantly improved, the internal quantum efficiency of LED can accomplish more than 90% completely, but, its external quantum efficiency is very low, general about 5%, the low main cause of LED light extraction efficiency is: the refractive index of the semi-conducting material refractive index ratio air of LED active layer is high, can total reflection be there is in light at the interface of LED medium and air, except the most of light within light cone not only can not emit from LED, and by hard contact, substrate or active layer absorb, or cause the non-radiative recombination in electronics and hole, light extraction efficiency is caused to be very restricted, and then chip temperature is sharply raised, cause led light decay, the negative effects such as look drift and reduced lifetime.
In order to improve light extraction efficiency, people have employed various method, such as inverted pyramid structure, at sapphire substrate growth Bragg reflecting layer (DBR), transparency electrode (ITO), the technology such as surface coarsening, improve light emission rate to a certain extent, but failing to realize wide frequency range all has high light emission rate and fail to obtain extraordinary recovery rate at about 460nm blue wave band.
Summary of the invention
The object of the present invention is to provide LED chip structure and method for designing thereof that a kind of light emission rate is high.
In order to improve light emission rate, and at wideband, all there is high light emission rate, the present invention designs a kind of simple pyramidal photonic crystal structure LED, set up LED model by Finite-Difference Time-Domain Method to calculate, then carry out parameter optimization, select suitable structural parameters can improve light emission rate in wide frequency range.Particularly, the LED chip structure of the present invention's design, it is followed successively by from bottom to top: DBR reflector 1, Sapphire Substrate 2, resilient coating 3, n-type semiconductor layer 4, MQW (multiple quantum well layer) 5, p-type semiconductor layer 6, as shown in Figure 1.Wherein, the pyramidal photonic crystal array of tetragonal is devised in p-type semiconductor layer 6.
The wideband high light-emitting rate LED construction design method that the present invention proposes, concrete steps are:
(1) on the basis of time-domain finite difference, utilize FDTD software building one with the LED model of pyramidal photonic crystal structure, be included in pyramidal photonic crystal array p-type semiconductor layer designing tetragonal;
(2) calculating the evolution of light inside LED structure based on Finite-Difference Time-Domain Method, by recording the light intensity of outgoing, obtaining final light extraction efficiency;
(3) pass through pyramidal photonic crystal structural parameters, comprise cone end radius d, bore high h, tetragonal constant a etc. is optimized, and the frequency range realized required for different visible light frequency range or engineering has high light extraction efficiency.
Experiment shows, in pyramidal photonic crystal structure, diameter is at 500 ± 20nm, and height is at 300 ± 10nm, and tetragonal constant is at 400 ± 25nm, and (boring high/diameter) β is in 0.5 ~ 0.7 scope, and LED all has high light extraction efficiency.
Result shows, and LED upper surface light emission rate approximately improves more than 7 times relative to common LED, and blue light frequency range can reach 14 times; And this structure is simple, realize easily via present nano impression or chemical etch technique.Nowadays most white-light illuminating is all that 460nm blue chip adds yellow fluorescent powder synthesis, utilizes this structure light extraction efficiency can be made to reach 14 times after optimizing.
The present invention can be widely used in the white-light illuminating LED chip field of the blue chip+yellow fluorescent powder of present main flow.
Accompanying drawing explanation
Fig. 1 is LED structure schematic diagram of the present invention.
Pyramidal photonic crystal (side-looking) schematic diagram that Fig. 2 adopts for p type semiconductor layer in LED structure.Note: pyramidal structure and p-type semiconductor layer material completely the same, black is just in order to this structure outstanding.
Pyramidal photonic crystal (overlooking) partial schematic diagram that Fig. 3 adopts for p type semiconductor layer in LED structure.
Fig. 4 is the photonic crystal LED after structure optimization and the multiple figure of enhancing compared with photon crystal structure LED recovery rate.Getting pyramidal photonic crystal diameter 500nm as seen from the figure, when boring high 300nm, this structure has higher recovery rate to promote at visible light wave range, and especially near 460nm wave band, effect highly significant, relative to general LED, improves about 14 times.
Number in the figure: 1-DBR reflector, 2-Sapphire Substrate, 3-resilient coating, 4-n type semiconductor layer, 5-MQW (multiple quantum well layer), 6-p type semiconductor layer.
Embodiment
Most preferred embodiment of the present invention is described in detail below in conjunction with technical scheme.
The object of the invention is the problem solving LED wideband high extraction, by setting up pyramidal photonic crystal structural model based on Fdtd Method theory, devise the pyramidal photonic crystal structure of tetragonal, FDTD algorithm is utilized to carry out calculating recovery rate to different lattice constants, different radii and tapered height photonic crystal, select optimum photon crystal structure, design for the photon crystal structure parameter at wide frequency range high extraction LED chip, it comprises the steps:
(1) LED structure model is set up based on Finite-Difference Time-Domain Method;
(2) design p layer (structure 6 in Fig. 1) pyramidal photonic crystal initial parameter, carry out primary Calculation;
(3) be optimized process with FDTD algorithm, obtain optimal result parameter;
(4) traditionally wafer growing method, successively growth: DBR reflector 1, Sapphire Substrate 2, resilient coating 3, n-type semiconductor layer 4, MQW (multiple quantum well layer) 5, p-type semiconductor layer 6; Be gallium nitride material in p-type semiconductor layer, at the pyramidal photonic crystal periodic structure of this layer of upper surface simplicity of design;
(5) utilize the 3D printing technique in nanolithography or chemical etch technique or future, the p-type semiconductor layer 6 grown is impressed or etched, make impression or etching figure out meet result of calculation parameter;
(6) then follow-up related process is carried out.
In order to the effect of this structure is described better, present invention employs the result parameter after optimization, unit taper cone bottom diameter is 500nm, bores high 300nm, tetragonal constant is 400nm, the result that this spline structure calculates can have good effect at 460nm wave band, and research finds that diameter is at 500 ± 20nm, and height is at 300 ± 10nm, tetragonal constant is at 400 ± 25nm, (boring high/diameter) β is in 0.5 ~ 0.7 scope, and the effect of raising is all more satisfactory, and preferred β is 0.6.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. the LED chip structure of a wideband high extraction, it is characterized in that: it is followed successively by from bottom to top: DBR reflector 1, Sapphire Substrate 2, resilient coating 3, n-type semiconductor layer 4, multiple quantum well layer 5, p-type semiconductor layer 6, wherein, the pyramidal photonic crystal array of tetragonal is devised in p-type semiconductor layer 6.
2. the LED chip structure of wideband high extraction according to claim 1, it is characterized in that: the structural parameters of described pyramidal photonic crystal array are: cone bottom diameter is at 500 ± 20nm, cone height is at 300 ± 10nm, and tetragonal constant, at 400 ± 25nm, bores high/diameter 0.5 ~ 0.7.
3. a method for designing for the LED chip structure of wideband high extraction, is characterized in that concrete steps are:
(1) on the basis of time-domain finite difference, utilize FDTD software building one with the LED model of pyramidal photonic crystal structure, be included in pyramidal photonic crystal array p-type semiconductor layer designing tetragonal;
(2) calculating the evolution of light inside LED structure based on Finite-Difference Time-Domain Method, by recording the light intensity of outgoing, obtaining final light extraction efficiency;
(3) pass through pyramidal photonic crystal structural parameters: cone end radius d, bore high h, tetragonal constant a is optimized, and the frequency range realized required for different visible light frequency range or engineering has high light extraction efficiency.
4. the method for designing of the LED chip structure of wideband high extraction according to claim 3, it is characterized in that the structural parameters of pyramidal photonic crystal array are: cone bottom diameter is at 500 ± 20nm, cone height is at 300 ± 10nm, tetragonal constant, at 400 ± 25nm, bores high/diameter 0.5 ~ 0.7.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410678856.4A CN104362229A (en) | 2014-11-24 | 2014-11-24 | Wide-band high-extraction-rate LED chip structure and design method thereof |
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| CN201410678856.4A CN104362229A (en) | 2014-11-24 | 2014-11-24 | Wide-band high-extraction-rate LED chip structure and design method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1716655A (en) * | 2004-06-28 | 2006-01-04 | 松下电器产业株式会社 | Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
| CN101908590A (en) * | 2010-07-28 | 2010-12-08 | 武汉迪源光电科技有限公司 | Efficient light-emitting diode (LED) of triangular cone light-emitting surface |
| CN102945902A (en) * | 2012-12-11 | 2013-02-27 | 东南大学 | Light-emitting diode of photonic crystal structure and application thereof |
-
2014
- 2014-11-24 CN CN201410678856.4A patent/CN104362229A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1716655A (en) * | 2004-06-28 | 2006-01-04 | 松下电器产业株式会社 | Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
| CN101908590A (en) * | 2010-07-28 | 2010-12-08 | 武汉迪源光电科技有限公司 | Efficient light-emitting diode (LED) of triangular cone light-emitting surface |
| CN102945902A (en) * | 2012-12-11 | 2013-02-27 | 东南大学 | Light-emitting diode of photonic crystal structure and application thereof |
Non-Patent Citations (3)
| Title |
|---|
| 殷子豪: ""光子晶体几何结构对LED出光效率影响的研究"", 《量子光学学报》 * |
| 陈健 等: ""光子晶体结构参数的随机扰动对光子晶体LED出光效率的研究"", 《光学学报》 * |
| 陈健 等: ""基于正方和六角排列结构光子晶体对发光二极管出光效率的研究"", 《物理学报》 * |
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