CN104354413A - Method for preventing metal layer in fenestrated film from being oxidated and fenestrated film - Google Patents
Method for preventing metal layer in fenestrated film from being oxidated and fenestrated film Download PDFInfo
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- CN104354413A CN104354413A CN201410616604.9A CN201410616604A CN104354413A CN 104354413 A CN104354413 A CN 104354413A CN 201410616604 A CN201410616604 A CN 201410616604A CN 104354413 A CN104354413 A CN 104354413A
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- layer
- dielectric film
- fenestrated membrane
- metal layer
- fenestrated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
Abstract
The invention provides a method for preventing a metal layer in a fenestrated film from being oxidated and a fenestrated film. The method comprises the following steps: plating a dielectric film on the surface of a clean polyester film PET layer by using a magnetron sputtering technique to form a compact nanometer level dielectric film layer, then performing film-plating of the metal layer on the dielectric film layer, and after metal plating is completed, plating another layer of the dielectric film on the surface of the metal layer. The method can be used for the production, the transportation and the membrane pasting of the fenestrated film, so that the oxidation action and the degradation action of an infrared nano metal layer in air or polluted air are reduced. According to the method, an oxidation preventing layer is plated on the surface and the subface of the metal layer in the fenestrated film structure by using the magnetron sputtering technique, so that an omnibearing protective layer with water vapor prevention, organic compound prevention, oxidation prevention and pollution prevention is formed. The oxidation preventing layer mainly uses dielectric film materials. Through the usage of the method, the light stability of the nanometer metal layer can be enhanced, so that the service life of the fenestrated membrane is prolonged, and at the same time, the energy-saving efficacy of the fenestrated film is improved and prolonged.
Description
Technical field
The present invention relates to glass fenestrated membrane production field, particularly a kind of method and fenestrated membrane thereof preventing metal layer in fenestrated membrane.
Background technology
Glass fenestrated membrane as a kind of brand-new construction material, more and more for the security protection of building window, partition wall, ceiling and banking.Fenestrated membrane can be divided into many types, the wherein energy-conservation fenestrated membrane energy saving building material that a class is emerging especially, the operation principle of energy-conservation fenestrated membrane relies on metal itself to ultrared albedo, most energy (infrared ray) in sunshine is reflected away, drastically reduce the area summer sunshine and be transmitted to indoor heat by glass, thus reach the use of minimizing air-conditioning, the effect of energy-saving heat-insulating.
In recent fenestrated membrane market, be flooded with all kinds of dyeing film and vacuum plated aluminum film.Although these films are cheap, it is not the best fenestrated membrane product accorded with the demands of the market.For dyeing film, be utilize coating process to be evenly coated on transparent polyester film by one deck insulation medium, this layer of insulation medium mainly contains the ultrared effect of of short duration absorption.This kind of film is short for service life, easily occurs fading, the phenomenon of decorative pattern, when insulation medium absorb infrared ray saturated after, will to indoor radiations heat energy, without any energy-conservation effect.The second vacuum plated aluminum film is the method with vacuum evaporation, is plated on transparent polyester film by layer of metal aluminium.This kind of film has lower transmission of visible light (about 40%), darker in pad pasting backhouse, and have high visible reflectance (more than 30%), this kind of reflective membrane is listed in one of light pollution source in American-European countries simultaneously.Although not yet have this type of to specify domestic, obviously high reflective fenestrated membrane is not optimal fenestrated membrane product.And due to technology restriction, the method for vacuum evaporation can not make further improvement on coating structure.
Along with the development of magnetron sputtering technique, it can make transparent heat-insulated nano level metal layer metals such as stainless steel, titanium, nickel, gold, silver, copper, make glass fenestrated membrane have very high vision definition when heat insulating function increases substantially simultaneously, solve dyeing, the defect such as the height of glass fenestrated membrane that vacuum evaporation coating process is produced is reflective, fugitive color.In recent years, domestic also have fewer companies (being less than 5) to introduce this technology to produce for fenestrated membrane, and this technology also can become the inevitable choice of high-end fenestrated membrane development.
But the metal level utilizing magnetron sputtering technique to plate is generally nanoscale (being less than 15nm) structure, be very easy to, in production, be damaged in transportation; Or after pad pasting uses, also can by the moisture in air or the sulfuration composition in contaminated air be oxidized, cause large area, can spread, and macroscopic black or Dark grey spot.Once metal level is oxidized, not only affects attractive in appearance and have impact on the energy-saving efficiency of fenestrated membrane.How ensureing fenestrated membrane energy-saving efficiency and service life, prevent this type of metal layer and degradation phenomena, is an emphasis of fenestrated membrane industry development and research.
Summary of the invention
For solving above-mentioned prior art Problems existing, one object of the present invention is to provide a kind of method preventing metal layer in fenestrated membrane, another object of the present invention is to provide a kind of fenestrated membrane utilizing said method to obtain, card fenestrated membrane energy-saving efficiency and service life can not only be ensured, the metal layer of fenestrated membrane and the generation of degradation phenomena can be prevented simultaneously.
For achieving the above object, technical scheme of the present invention is:
Prevent a method for metal layer in fenestrated membrane, the method is:
Adopt magnetron sputtering technique, dielectric film is plated in clean polyester film pet layer surface, forms the nanoscale Dielectric film layers of one deck densification, afterwards at this Dielectric film layers enterprising row metal layer plated film, after completing the coat of metal, then another layer of dielectric film is plated in this layer on surface of metal.
Further, in described magnetron sputtering, passing into gas is argon gas, vacuum 10-6Torr; Magnetic control spattering target selects dielectric media to be silica, titanium dioxide, zinc oxide, silicon nitride; Dielectric film is at the uniform velocity deposited on pet layer or layer on surface of metal, and its thickness is 10-50nm.
Further, described magnetron sputtering membrane process keeps temperature constant, and not higher than 25 DEG C, prevents the heat produced in magnetron sputtering from causing pet layer to be out of shape.
A kind of fenestrated membrane preventing nano metal layer to be oxidized, to be hardened pet layer by one side, it adopt magnetron sputtering be coated with Dielectric film layers, first Dielectric film layers is coated with the metal level preventing infrared external reflection, the another side of metal level is coated with the second Dielectric film layers, and the second Dielectric film layers another side is adhesive with successively installs glue-line and release film layer.
Further, be provided with for anti-ultraviolet pet layer between described second dielectric film thin layer and installation glue-line, between this anti-ultraviolet pet layer and the second dielectric film thin layer, be also provided with installation glue-line.
Further, described first Dielectric film layers and the second dielectric film layer thickness are 10-50nm.
Further, described first Dielectric film layers and the second Dielectric film layers choose silica, titanium dioxide, and silicon nitride is as the dielectric media of magnetron sputtering.
Relative to prior art, beneficial effect of the present invention is:
Adopt magnetic control construction technique, the pet layer that the one side of cleaning hardens plates one deck dielectric film, and thickness is between 10-50nm, and this dielectric film plates the nano metal layer of one deck counter infrared ray, and thickness is at below 15nm.Finally on nano metal layer, cover one deck dielectric film again, thickness is at 10-50nm.These three layers of magnetron sputtering films are the main parts of fenestrated membrane.By to the trickle adjustment of the thickness of this three-layer thin-film, the transmission of visible ray height can be obtained, the energy-saving fenestrated membrane of infrared high reflectance.For individual layer pet fenestrated membrane, after completing main body plated film, directly can brush installation glue cover mould release membrance; For double-deck pet fenestrated membrane, one deck uvioresistant pet can be added and further protect nano-coating, in second layer pet outer brush, glue is installed and cover mould release membrance.
Said method of the present invention, the protection of upper and lower surface that made the nano metal layer in fenestrated membrane many, its advantage compared with traditional fenestrated membrane has:
1) by adding plating dielectric film in nano metal layer top and bottom, thus effectively prevent the infringement to metal nano layer in process of production, effectively prevent scuffing, organic solvent pollution etc.
2) simultaneously in fenestrated membrane use procedure, enhance the stability of nano metal layer, slow down the air of pollution, aqueous vapor, chemical substance etc. are to the corrosion of nano metal layer in fenestrated membrane and oxidation.
Accompanying drawing explanation
Fig. 1 is fenestrated membrane structural representation of the present invention.
Fig. 2 is on Fig. 1 fenestrated membrane basis, with the addition of the fenestrated membrane structural representation of anti-ultraviolet pet layer.
Wherein, 1-PET layer, 2-Dielectric film layers, 3-metal level, 4-installs glue-line, 5-release film layer.
Detailed description of the invention
Below in conjunction with the drawings and the specific embodiments, the present invention program is described in further detail,
Embodiment 1: a kind of method preventing metal layer in single substrate fenestrated membrane as shown in Figure 1, be 30cm × 30cm by area, thickness is after the high transparency plastic sheeting pet layer cleaning of 50 microns, magnetically controlled sputter method is adopted to deposit three-layer thin-film successively: ground floor is the dielectric film of thickness 10nm, the second layer is nano metal layer, thickness 10nm, third layer is the dielectric film of thickness 10nm, similar to ground floor.Wherein depositing temperature is 25 DEG C, air pressure 10-6Torr.After completing multilayer magnetron sputtering, glue is installed in attachment and mould release membrance can complete fenestrated membrane making.
A kind of fenestrated membrane preventing metal layer in fenestrated membrane utilizing the method to prepare, by one side sclerosis pet layer 1, it adopt magnetron sputtering be coated with Dielectric film layers 2, first Dielectric film layers 2 is coated with the metal level 3 preventing infrared external reflection, the another side of metal level 3 is coated with the second Dielectric film layers 2, second Dielectric film layers 2 another side and is adhesive with installation glue-line 4 and release film layer 5 successively.Described first Dielectric film layers 2 and the second Dielectric film layers 2 thickness are 10nm.Described first Dielectric film layers 2 chooses silica, the second Dielectric film layers 2 chooses titanium dioxide.
Embodiment 2: be illustrated in figure 2 a kind of method preventing metal layer in fenestrated membrane at the bottom of double-basis, be 30cm × 30cm by area, thickness is after the high transparency plastic sheeting pet layer cleaning of 50 microns, magnetically controlled sputter method is adopted to deposit three-layer thin-film successively: ground floor is the dielectric film of thickness 50nm, the second layer is nano metal layer, thickness 15nm, third layer is the dielectric film of thickness 150m, similar to ground floor.Wherein depositing temperature is 25 DEG C, air pressure 10-6Torr.Sedimentary deposit is coated with adhesive agent and adds the basic structure that one deck UV resistance pet just completes fenestrated membrane at the bottom of double-basis, more namely attachment installation glue and mould release membrance complete fenestrated membrane finished product structure at the bottom of double-basis on UV resistance pet layer.
A kind of fenestrated membrane preventing metal layer in fenestrated membrane utilizing the method to prepare, by one side sclerosis pet layer 1, it adopt magnetron sputtering be coated with Dielectric film layers 2, first Dielectric film layers 2 is coated with the metal level 3 preventing infrared external reflection, the another side of metal level 3 is coated with the second Dielectric film layers 2, second Dielectric film layers 2 another side and is adhesive with installation glue-line 4 and release film layer 5 successively.Described first Dielectric film layers 2 and the second Dielectric film layers 2 thickness are 50nm.Be provided with for anti-ultraviolet pet layer 1 between described second dielectric film thin layer 2 and installation glue-line 4, be also provided with between this anti-ultraviolet pet layer 1 and second dielectric film thin layer 2 and glue-line 4 is installed.Described first Dielectric film layers 2 chooses titanium dioxide, and the second Dielectric film layers 2 chooses the dielectric media of silicon nitride as magnetron sputtering.
The above, be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, and any change of expecting without creative work or replacement, all should be encompassed within protection scope of the present invention.Therefore, the protection domain that protection scope of the present invention should limit with claims is as the criterion.
Claims (7)
1. prevent a method for metal layer in fenestrated membrane, it is characterized in that, the method is:
Adopt magnetron sputtering technique, dielectric film is plated in clean polyester film pet layer surface, forms the nanoscale Dielectric film layers of one deck densification, afterwards at this Dielectric film layers enterprising row metal layer plated film, after completing the coat of metal, then another layer of dielectric film is plated in this layer on surface of metal.
2. the method preventing metal layer in fenestrated membrane according to claim 1, is characterized in that, in described magnetron sputtering, passing into gas is argon gas, vacuum 10-6Torr; Magnetic control spattering target selects dielectric media to be silica, titanium dioxide, zinc oxide, silicon nitride; Dielectric film is at the uniform velocity deposited on pet layer or layer on surface of metal, and its thickness is 10-50nm.
3. the method preventing metal layer in fenestrated membrane according to claim 1, is characterized in that, described magnetron sputtering membrane process keeps temperature constant, and not higher than 25 DEG C, prevents the heat produced in magnetron sputtering from causing pet layer to be out of shape.
4. one kind prevents the fenestrated membrane of metal layer in fenestrated membrane, it is characterized in that, to be hardened pet layer by one side, it adopt magnetron sputtering be coated with Dielectric film layers, first Dielectric film layers is coated with the metal level preventing infrared external reflection, the another side of metal level is coated with the second Dielectric film layers, and the second Dielectric film layers another side is adhesive with successively installs glue-line and release film layer.
5. fenestrated membrane according to claim 4, is characterized in that, is provided with for anti-ultraviolet pet layer, is also provided with installation glue-line between this anti-ultraviolet pet layer and the second dielectric film thin layer between described second dielectric film thin layer and installation glue-line.
6. the fenestrated membrane according to claim 4 or 5, is characterized in that, described first Dielectric film layers and the second dielectric film layer thickness are 10-50nm.
7. fenestrated membrane according to claim 6, is characterized in that, described first Dielectric film layers and the second Dielectric film layers choose silica, titanium dioxide, and silicon nitride is as the dielectric media of magnetron sputtering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410616604.9A CN104354413A (en) | 2014-11-03 | 2014-11-03 | Method for preventing metal layer in fenestrated film from being oxidated and fenestrated film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410616604.9A CN104354413A (en) | 2014-11-03 | 2014-11-03 | Method for preventing metal layer in fenestrated film from being oxidated and fenestrated film |
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| CN104354413A true CN104354413A (en) | 2015-02-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410616604.9A Pending CN104354413A (en) | 2014-11-03 | 2014-11-03 | Method for preventing metal layer in fenestrated film from being oxidated and fenestrated film |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106827722A (en) * | 2017-03-20 | 2017-06-13 | 大连爱瑞德纳米科技有限公司 | Multifunctional glass film |
| CN106827742A (en) * | 2017-03-20 | 2017-06-13 | 大连爱瑞德纳米科技有限公司 | Half mirror film |
| CN110116531A (en) * | 2019-04-09 | 2019-08-13 | 陆日新 | One kind having selective solar spectrum fenestrated membrane multi-layer nano structure and preparation method thereof |
| CN114771062A (en) * | 2022-03-30 | 2022-07-22 | 湖南师范大学 | Window film warm in winter and cool in summer and preparation method thereof |
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| CN101929590A (en) * | 2009-06-22 | 2010-12-29 | 核工业西南物理研究院 | Solar control-low radiation type heat-insulation membrane system |
| CN103121315A (en) * | 2011-11-21 | 2013-05-29 | 核工业西南物理研究院 | Heat insulating film |
| CN204526304U (en) * | 2014-11-03 | 2015-08-05 | 大连爱瑞德纳米科技有限公司 | A kind of fenestrated membrane preventing metal layer |
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2014
- 2014-11-03 CN CN201410616604.9A patent/CN104354413A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101929590A (en) * | 2009-06-22 | 2010-12-29 | 核工业西南物理研究院 | Solar control-low radiation type heat-insulation membrane system |
| CN103121315A (en) * | 2011-11-21 | 2013-05-29 | 核工业西南物理研究院 | Heat insulating film |
| CN204526304U (en) * | 2014-11-03 | 2015-08-05 | 大连爱瑞德纳米科技有限公司 | A kind of fenestrated membrane preventing metal layer |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106827722A (en) * | 2017-03-20 | 2017-06-13 | 大连爱瑞德纳米科技有限公司 | Multifunctional glass film |
| CN106827742A (en) * | 2017-03-20 | 2017-06-13 | 大连爱瑞德纳米科技有限公司 | Half mirror film |
| CN106827722B (en) * | 2017-03-20 | 2019-06-07 | 大连爱瑞德纳米科技有限公司 | Multifunctional glass film |
| CN110116531A (en) * | 2019-04-09 | 2019-08-13 | 陆日新 | One kind having selective solar spectrum fenestrated membrane multi-layer nano structure and preparation method thereof |
| CN114771062A (en) * | 2022-03-30 | 2022-07-22 | 湖南师范大学 | Window film warm in winter and cool in summer and preparation method thereof |
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Addressee: Patent Dalian Airuide Nano Technology Co., the company responsible person Document name: Notification that Application Deemed not to be Proposed |
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Inventor after: Zhu Wei Inventor after: Chen Tupei Inventor before: Dou Wei |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150218 |