CN104345329B - radiation detection circuit - Google Patents
radiation detection circuit Download PDFInfo
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- CN104345329B CN104345329B CN201410643636.8A CN201410643636A CN104345329B CN 104345329 B CN104345329 B CN 104345329B CN 201410643636 A CN201410643636 A CN 201410643636A CN 104345329 B CN104345329 B CN 104345329B
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- pmos transistor
- radiosensitive
- radiation
- current source
- detection circuit
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- Measurement Of Radiation (AREA)
Abstract
The present invention provides a radiation detection circuit comprising: the radiation detection device comprises a first radiation sensitive PMOS transistor, a second radiation sensitive PMOS transistor, a first current source, a second current source and a differential amplifier, wherein the first radiation sensitive PMOS transistor and the second radiation sensitive PMOS transistor are used for sensing radiation to be detected; the first current source and the first radiation-sensitive PMOS transistor are connected in series to form a first branch circuit; the second current source and the second radiation-sensitive PMOS transistor are connected in series to form a second branch circuit; the first branch circuit and the second branch circuit are connected in parallel, a first branch circuit output end and a second branch circuit output end which are respectively led out from the first radiation sensitive PMOS transistor and the second radiation sensitive PMOS transistor are connected to two input ends of the differential amplifier, and the output of the differential amplifier reflects the size of radiation to be measured. The invention provides a radiation detection circuit which is simple in structure and reduces the influence of environmental noise.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of novel PMOS accumulated dose spoke
Penetrate detection circuit.
Background technology
In space, a lot of electronic equipments all can be exposed under certain radiation environment.In order to protect
Demonstrate,proving the reliability of these electronic equipments, the detection to integral dose radiation is necessary.Because once
Total radiation dose exceedes a certain amount, may result in the inefficacy of electronic system.
PMOS integral dose radiation detector mainly include by special process make radiosensitive
Field-effect transistor.Oxide trap owing to producing after radiation makes with interface trapped charge
MOSFET threshold voltage drifts about.By demarcating threshold voltage shift amount and irradiation dose
Relation, measures threshold voltage shift and measures the size of radiation dose.It is, in general, that NMOS
After radiation, oxide-trapped charge makes its threshold voltage generation negative sense drift about, but interface charge
Make its threshold voltage generation positive excursion；PMOS radiation after produce oxide-trapped charge and
Interface charge all makes its threshold voltage negative sense drift about, and the most most integral dose radiation detects
Circuit typically uses pmos fet as integral dose radiation detector.
From above-mentioned principle, can set according to the change that pMOS transistor threshold voltage produces
Count out circuit, enable to reflect the size of suffered integral dose radiation environment.As it is shown in figure 1,
For the detection circuit schematic diagram of prior art, this reading circuit by four main module compositions,
Analogue signal can be converted into digital signal output.Therefore this detection circuit is in order to meet certain
A little digital automation system and excessively complicated.But in general application, it may not be necessary to AD turns
Change.
Can apply in the lab therefore, it is intended that propose one, the total agent of relatively simple pMOS
Amount Radiation monitoring circuit.
Summary of the invention
It is desirable to provide a kind of radiation detection circuit, its simple in construction, and alleviate environment and make an uproar
The impact of sound.
The invention provides a kind of radiation detection circuit, including: the first radiosensitive PMOS is brilliant
Body pipe, the second radiosensitive PMOS transistor, the first current source, the second current source and difference
Amplifier, wherein, the first radiosensitive PMOS transistor, the second radiosensitive PMOS
Transistor is used to sense radiation to be measured；First current source and the first radiosensitive PMOS crystal
Pipe series connection forms the first branch road；Second current source and the series connection of the second radiosensitive PMOS transistor
Form the second branch road；First branch road and the second branch circuit parallel connection, and from the first radiosensitive PMOS
The first branch road outfan that transistor, the second radiosensitive PMOS transistor are drawn respectively,
Two inputs of difference amplifier received by two branch road outfans, the output reflection of difference amplifier
Go out the size of radiation to be measured.
Compared with prior art, the technical scheme using the present invention to provide has the advantage that logical
Cross use constant current source and will be converted to source and drain by electric current produced by radiosensitive PMOS
The change of two terminal potentials, as the Differential Input of differential amplifier circuit, it is achieved that radiation caused
Unidirectional and small threshold voltage variation be transformed into the voltage of bigger two-way change to spoke
The detection of firing association's dosage becomes simple and easy to do, has reached the mesh of detection radiation by simple structure
, meanwhile, utilize difference amplifier to alleviate the impact of environment noise.
Accompanying drawing explanation
By reading retouching in detail with reference to made non-limiting example is made of the following drawings
Stating, the other features, objects and advantages of the present invention will become more apparent upon.
Fig. 1 is the PMOS accumulated dose spoke detection circuit schematic diagram of prior art；
The structure of Fig. 2 PMOS integral dose radiation detection circuit according to an embodiment of the invention
Figure.
Detailed description of the invention
Embodiments of the invention are described below in detail.
The example of described embodiment is shown in the drawings, the most same or similar mark
Number represent same or similar element or there is the element of same or like function.Below by ginseng
The embodiment examining accompanying drawing description is exemplary, is only used for explaining the present invention, and can not be construed to
Limitation of the present invention.Following disclosure provides many different embodiments or example for reality
The different structure of the existing present invention.In order to simplify disclosure of the invention, hereinafter to specific examples
Parts and setting are described.Certainly, they are the most merely illustrative, and are not intended to limit
The present invention.Additionally, the present invention can in different examples repeat reference numerals and/or letter.This
Kind repeat to be for purposes of simplicity and clarity, itself do not indicate discussed various embodiment with
/ or arrange between relation.Additionally, the various specific device that the invention provides and structure
Example, but those of ordinary skill in the art it can be appreciated that other devices the property of can be applicable to and
/ or the use of other structures.
The invention provides a kind of PMOS integral dose radiation detection circuit.Below, will be by this
PMOS integral dose radiation detection circuit shown in Fig. 2 is carried out specifically by one embodiment of invention
Describe.As in figure 2 it is shown, PMOS integral dose radiation detection circuit provided by the present invention includes
Following structure:
First radiosensitive PMOS transistor M1, the second radiosensitive PMOS transistor
M2, the first current source CS1, the second current source CS2 and difference amplifier OP, wherein, the
One current source CS1 and the series connection of the first radiosensitive PMOS transistor M1 form the first branch road,
For the threshold value that will be obtained by the first radiosensitive PMOS transistor M1 detecting radiation to be measured
Change in voltage is transformed into the first gate source voltage Vgs1Change；Second current source CS2 and with first
Radiosensitive PMOS transistor M1 detects the second radiosensitive PMOS crystal of same radiation
Pipe M2 series connection forms the second branch road, and being used for will be by the second radiosensitive PMOS transistor M2
The threshold voltage variation obtained is transformed into the second gate source voltage Vgs2Change；First branch road and
The outfan of two branch roads, the source electrode of the i.e. first radiosensitive PMOS transistor M1, the second spoke
Penetrate the grid of sensitive PMOS transistor M2, reflect the size of radiation to be measured respectively.But by
Easily being affected by environment noise etc. in them, accuracy rate is low, therefore they is connected into difference amplifier
Two inputs of OP, the outfan of such difference amplifier OP eliminates the need for environment noise
Impact.
The structure of described first branch road is: the two ends of the first current source CS1 respectively with input voltage
VDDIt is connected with the source electrode of the first radiosensitive PMOS transistor M1；First is radiosensitive
The source electrode of PMOS transistor M1 and one end of the first current source are connected, and are attempted by differential amplification
The negative input end of device OP, drain and gate is connected on the ground.
When described PMOS integral dose radiation detection circuit is in running order, described radiation-sensitive
Sense PMOS works in saturation region, it is characterized by produce oxide trap after being radiated
With interface trapped charge, this will make its threshold voltage generation negative sense drift about, because PMOS
Pipe threshold voltage was negative value originally, and after radiation, threshold voltage becomes less, so at the shadow of radiation
The absolute value ringing its threshold voltage lower can become big.Electric current according to PMOS transistor saturation region is public
Formula:
Wherein, IDRepresent the source-drain current of metal-oxide-semiconductor, μPRepresent the migration in hole in PMOS
Rate, W and L represents width and the length of metal-oxide-semiconductor, C respectivelyOXRepresent grid oxygen electric capacity, VGSRepresent grid
Source voltage, VTHIt it is threshold voltage.
Thus formula can obtain, owing to the first radiosensitive PMOSM1 pipe is held open state,
And under the effect of constant current source, its source-drain current IDKeep constant, under the effect of radiation,
VTHNegative is more, therefore to make to flow through the constant current hold of M1, the first gate source voltage Vgs1
Originally being negative value, therefore its absolute value also must reduce, so by the first radiosensitive PMOS
The threshold voltage variation that transistor M1 obtains has been transformed into the first gate source voltage Vgs1Negative sense
Change, namely the output voltage of the first branch structure.
The structure of described second branch road is: the two ends of the second current source radiate with ground and second respectively
The drain electrode of sensitive PMOS transistor M2 is connected；Second radiosensitive PMOS transistor M2
Source electrode be connected on input voltage VDDOn, drain electrode is connected with one end of the second current source, and grid connects
Positive input terminal at difference amplifier OP.
When described PMOS integral dose radiation detection circuit is in running order, described second spoke
Penetrate sensitive PMOS M2 and work in saturation region, by the first radiosensitive PMOS transistor
The analysis of M1 understands, after it is radiated, and the second gate source voltage Vgs2Absolute value is the most necessary
Reduce, but unlike the first branch road, the voltage as the outfan of the second branch road is not grid
Source voltage Vgs2But (VDD—Vgs2), so by the second radiosensitive PMOS transistor
The threshold voltage variation that M2 obtains has been transformed into (VDD—Vgs2) positive change.
According to embodiments of the invention, described first radiosensitive PMOS transistor M1,
Two radiosensitive PMOS transistor M2 use identical technique manufacture, have same
Configuration；Described first current source CS1, the second current source CS2 use identical technique system
Make, there is same configuration.Preferably, in the course of processing, said structure is on domain
Adjacent.The purpose of do so is, reduction by first branch road of maximum possible and the second branch road are adding
Produce during work is inconsistent so that the parameter of the first branch road and the second branch road as far as possible
Cause, so after by identical radiation, the voltage V of the first branch road outputgs1With the second branch road
Voltage (the V of outputDD—Vgs2) identical in amplitude of variation, different is only symbol
Difference, so could input to difference amplifier OP as differential signal.
Those skilled in the art can select required difference amplifier OP as required, and designs
Relevant parameter, sets the difference that the first branch road and the second branch road are inputted by certain amplification A
Sub-signal is amplified and exports.
Finally by the change of the voltage measured after finally amplifying, and according to the amplification of circuit design
Multiple A, can calculate the knots modification of radiosensitive PMOS transistor threshold voltage, and
Obtain the size of integral dose radiation eventually.
Compared with prior art, the technical scheme using the present invention to provide has the advantage that logical
Cross use constant current source and will be converted to source and drain by electric current produced by radiosensitive PMOS
The change of two terminal potentials, as the Differential Input of differential amplifier circuit, it is achieved that radiation caused
Unidirectional and small threshold voltage variation be transformed into the voltage of bigger two-way change to spoke
The detection of firing association's dosage becomes simple and easy to do.
Although the present invention and advantage thereof being described in detail already in connection with specific embodiment above, it should
Understand the situation at the spiritual and defined in the appended claims protection domain without departing from the present invention
Under, these embodiments can be carried out various change, substitutions and modifications.For other examples,
Those of ordinary skill in the art is it should be readily appreciated that same keep in scope
Time, the order of processing step can change.
Additionally, the range of application of the present invention is not limited to the specific embodiment described in description
Technique, mechanism, manufacture, material composition, means, method and step.From disclosure of the invention
Content, will readily appreciate that as those of ordinary skill in the art, for having existed at present or
Technique, mechanism, manufacture, material composition, means, method or the step will developed after person
Suddenly, wherein they perform the function that is substantially the same of corresponding embodiment with present invention description or obtain
They can be applied by the result that must be substantially the same according to the present invention.Therefore, the present invention
Claims are intended to these technique, mechanism, manufacture, material composition, means, method
Or step is included in its protection domain.
Claims (6)
1. a radiation detection circuit, it is characterised in that including:
First radiosensitive PMOS transistor (M1), the second radiosensitive PMOS transistor (M2),
First current source (CS1), the second current source (CS2) and difference amplifier (OP), wherein,
First radiosensitive PMOS transistor (M1), the second radiosensitive PMOS transistor (M2)
It is used to sense radiation to be measured；
First current source (CS1) and the first radiosensitive PMOS transistor (M1) series connection formation the
One branch road；
Second current source (CS2) and the second radiosensitive PMOS transistor (M2) series connection formation the
Two branch roads；
First branch road and the second branch circuit parallel connection, and from the first radiosensitive PMOS transistor (M1),
The first branch road outfan that second radiosensitive PMOS transistor (M2) is drawn respectively, second
Road outfan receives two inputs of difference amplifier (OP), the output of difference amplifier (OP)
Reflect the size of radiation to be measured.
Radiation detection circuit the most according to claim 1, wherein:
The two ends of the first current source respectively with input voltage (VDD) and the first radiosensitive PMOS crystalline substance
The source electrode of body pipe (M1) is connected；
The source electrode of the first radiosensitive PMOS transistor (M1) receives difference amplifier (OP)
Negative input end, drain and gate ground connection.
Radiation detection circuit the most according to claim 1, wherein:
The two ends of the second current source PMOS transistor radiosensitive with ground and second (M2) respectively
Drain electrode is connected；
The source electrode of the second radiosensitive PMOS transistor (M2) receives input voltage (VDD), grid
The positive input terminal of difference amplifier (OP) is received in pole.
Radiation detection circuit the most according to claim 1, wherein, described first radiosensitive
PMOS transistor (M1), the second radiosensitive PMOS transistor (M2) work in saturation region.
Radiation detection circuit the most according to claim 1, wherein, described first radiosensitive
PMOS transistor (M1), the second radiosensitive PMOS transistor (M2) configuration identical.
Radiation detection circuit the most according to claim 1, wherein, described first current source (CS1),
Second current source (CS2) configures identical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410643636.8A CN104345329B (en) | 2014-11-10 | 2014-11-10 | radiation detection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410643636.8A CN104345329B (en) | 2014-11-10 | 2014-11-10 | radiation detection circuit |
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| Publication Number | Publication Date |
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| CN104345329A CN104345329A (en) | 2015-02-11 |
| CN104345329B true CN104345329B (en) | 2016-10-26 |
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| CN110376499B (en) * | 2019-07-16 | 2021-08-31 | 西北核技术研究院 | System and method for measuring three-terminal current waveform and annealing effect of triode and method for measuring neutron fluence |
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