CN104345328B - radiation detection circuit - Google Patents
radiation detection circuit Download PDFInfo
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- CN104345328B CN104345328B CN201410594524.8A CN201410594524A CN104345328B CN 104345328 B CN104345328 B CN 104345328B CN 201410594524 A CN201410594524 A CN 201410594524A CN 104345328 B CN104345328 B CN 104345328B
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- 230000005855 radiation Effects 0.000 title claims abstract description 69
- 238000001514 detection method Methods 0.000 title claims abstract description 31
- 230000006641 stabilisation Effects 0.000 claims description 10
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- 230000003321 amplification Effects 0.000 claims description 8
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 239000000203 mixture Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
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- 230000005669 field effect Effects 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
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Abstract
The present invention provides a radiation detection circuit comprising: a first PMOS transistor for sensing radiation to be measured; a first amplifier connected to the first PMOS transistor; a second PMOS transistor that does not sense radiation to be detected; a second amplifier connected to the second PMOS transistor; and the comparison module is used for comparing the outputs of the first amplifier and the second amplifier and amplifying and outputting the difference value. The invention simplifies the structure of the radiation detection circuit and greatly reduces the power consumption compared with the prior art.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of radiation detection circuit.
Background technology
In space, many electronic equipments can be all exposed under certain radiation environment.In order to ensure these electronic equipments
Reliability, the detection to integral dose radiation is necessary.Once because total radiation dose exceedes a certain amount, it may result in electricity
The failure of subsystem.
PMOS integral dose radiations detector mainly includes the radiosensitive field-effect transistor being made up of special process.Due to
The oxide trap produced after radiation is with interface trapped charge so that MOSFET threshold voltages drift about.By demarcating threshold value electricity
The relation of drift value and irradiation dose is pressed, the size that threshold voltage shift measures dose of radiation is measured.It is, in general, that NMOS spokes
After penetrating, oxide-trapped charge makes its threshold voltage occur negative sense drift, but interface charge makes its threshold voltage occur forward direction
Drift；The oxide-trapped charge and interface charge produced after PMOS radiation all causes its threshold voltage negative sense to drift about, therefore greatly
Partial integral dose radiation detection circuit is typically used as integral dose radiation detector using pmos fet.
From above-mentioned principle, the change design that can be produced according to pMOS transistor threshold voltages goes out circuit, made it
Enough reflect the size of suffered integral dose radiation environment.As shown in figure 1, being the detection circuit schematic diagram of prior art, the reading
Analog signal can be converted into data signal output by circuit by four main module compositions.Therefore this detection circuit is
Meet some digital automation systems and excessively complicated.But in general application, and do not need AD conversion.
Therefore, it is intended that propose that one kind can be applied in the lab, relatively simple pMOS integral dose radiation observation circuits.
The content of the invention
It is an object of the present invention to provide a kind of structure lower radiation detection circuit of simple, power consumption.
The invention provides a kind of radiation detection circuit, including：The first PMOS transistor for sensing radiation to be measured；With
First amplifier of the first PMOS transistor connection；The second PMOS transistor of radiation to be measured is not sensed；With the 2nd PMOS crystal
The second connected amplifier of pipe；And comparison module, for the output of the first amplifier and the second amplifier to be compared, and
Its difference is amplified output.
Alternatively, the first amplifier is operational amplifier, and the source electrode of first PMOS transistor connects supply voltage, drain electrode
The common mode input of the first amplifier is connected, grid connects the difference-mode input end of first amplifier, first amplifier
The output connection comparison module common mode input.
Alternatively, have first between the grid of first PMOS transistor and the difference-mode input end of the first amplifier steady
Leakage resistance.
Alternatively, the second amplifier is operational amplifier, and the source electrode of second PMOS transistor connects supply voltage, drain electrode
The difference-mode input end of the second amplifier is connected, grid connects the common mode input of second amplifier, second amplifier
The output connection comparison module difference-mode input end.
Alternatively, have second between the grid of second PMOS transistor and the common mode input of the second amplifier steady
Leakage resistance.
Alternatively, the first PMOS transistor is identical with the configuration of the second PMOS transistor, and the first amplifier and second is put
The configuration of big device is identical.
Alternatively, first, second PMOS transistor works in saturation region.
Alternatively, the comparison module includes the 3rd amplifier, and its output signal reflects the size of radiation to be measured.
Alternatively, the radiation detection circuit also includes current stabilization module, and the current stabilization module is used to be the first PMOS crystal
The drain electrode of pipe and the second PMOS transistor provides equal stabling current.
Alternatively, the current stabilization module includes：Constant voltage source, its positive pole connects the common mode input of first amplifier
End and the difference-mode input end of the second amplifier, negative pole ground connection；3rd ballast resistance, one terminates the positive pole of constant voltage source, one
End ground connection；4th ballast resistance, one terminates the positive pole of constant voltage source, one end ground connection；3rd ballast resistance and the 4th
Ballast resistance resistance is equal.
The radiation detection circuit of prior art uses AD conversion.It was found by the inventors of the present invention that without AD conversion, using mould
Intend device, can equally realize accurate radiation detection, this spline structure simpler, power consumption is lower.After the present invention is using PMOS radiation
The oxide-trapped charge and interface charge of generation all cause the characteristics of threshold voltage negative sense drifts about, and utilize threshold voltage shift amount
With the relation of irradiation dose, radiation to be measured is sensed with the first PMOS transistor.Due to the influence of radiation to be measured, make the first PMOS brilliant
The output offset of body pipe, amplifies through the first amplifier.And the second PMOS transistor is that, without raying, its output is also through
Two amplifiers amplify.First amplifier and the signal of the second amplifier amplification compare through comparison module again, and this output just can
Reflect the skew of the output voltage due to the first PMOS transistor that the influence of radiation is caused, the skew reflects amount of radiation.It is logical
This mode is crossed, using simple analog circuit, remains able to realize the purpose of detection radiation to be measured, has reached with simpler
Radiation, the effect of lower power consumption detection radiation.
Brief description of the drawings
By reading the detailed description made to non-limiting example made with reference to the following drawings, of the invention is other
Feature, objects and advantages will become more apparent upon.
Fig. 1 is the radiation detection circuit diagram of prior art；
The structure chart of Fig. 2 radiation detection circuits according to an embodiment of the invention.
Embodiment
Embodiments of the invention are described below in detail.
The example of the embodiment is shown in the drawings, wherein same or similar label represents identical or class from beginning to end
As element or the element with same or like function.The embodiments described below with reference to the accompanying drawings are exemplary, only
For explaining the present invention, and it is not construed as limiting the claims.Following disclosure provide many different embodiments or
Example is used for realizing the different structure of the present invention.In order to simplify disclosure of the invention, hereinafter to the parts of specific examples and set
Put and be described.Certainly, they are only merely illustrative, and purpose does not lie in the limitation present invention.
The invention provides a kind of PMOS radiation detection circuits based on operational amplifier.Below, it will pass through the present invention's
Radiation detection circuit shown in Fig. 2 is specifically described one embodiment.As shown in Fig. 2 radiation provided by the present invention is visited
Slowdown monitoring circuit includes following structure：
The first PMOS transistor M1 for sensing radiation to be measured；
The first amplifier A1 being connected with the first PMOS transistor M1；
The second PMOS transistor M2 of radiation to be measured is not sensed；
The second amplifier A2 being connected with the second PMOS transistor M2；And
Comparison module, for the first amplifier A1 and the second amplifier A2 output to be compared, and its difference is entered
Row amplification output.
Alternatively, the first amplifier A1 is operational amplifier, and the source electrode of the first PMOS transistor M1 connects supply voltage,
The first amplifier A1 of drain electrode connection common mode input, grid connects the difference-mode input end of the first amplifier A1, and described the
The common mode input of the one amplifier A1 output connection comparison module.But the first amplifier can also use other amplifications
Device, as long as can amplify to the signal that the first PMOS is exported.Because the signal that the first PMOS is exported is too small, it is impossible to directly survey
Amount compares into comparison module, therefore to pass through the first amplifier.Using operational amplifier be conducive to structure further it is simple,
Further reduce power consumption.
Alternatively, have the between the grid of the first PMOS transistor M1 and the first amplifier A1 difference-mode input end
One ballast resistance R3.It is conducive to stablizing grid and the first amplifier A1 difference-mode input end of the first PMOS transistor M1
Between electric current.
Preferably, the second amplifier A2 is operational amplifier, and the source electrode of the second PMOS transistor M2 connects supply voltage,
The second amplifier A2 of drain electrode connection difference-mode input end, grid connects the common mode input of the second amplifier A2, and described the
The difference-mode input end of the two amplifier A2 output connection comparison module.But the second amplifier can also use other amplifications
Device, as long as can amplify to the signal that the second PMOS is exported.Because the signal that the 2nd PMOS is exported is too small, it is impossible to directly survey
Amount compares into comparison module, therefore to pass through the second amplifier.Using operational amplifier be conducive to structure further it is simple,
Further reduce power consumption.
Alternatively, have the between the grid of the second PMOS transistor M2 and the second amplifier A2 common mode input
Two ballast resistance R4.Its effect is similar with R3.
Wherein, the first PMOS transistor M1 and the second PMOS transistor M2 configurations are identical, the first amplifier A1 and the
Two amplifier A2 configuration is identical.
Wherein, first, second PMOS transistor M1, M2 works in saturation region.
Alternatively, the comparison module includes the 3rd amplifier A3, and its output signal reflects the size of radiation to be measured.But
Other comparison modules, the comparison circuit such as built can be used.
Wherein, the radiation detection circuit also includes current stabilization module, and the current stabilization module is used to be the first PMOS transistor
M1 and the second PMOS transistor M2 drain electrode provides equal stabling current.
Wherein, the current stabilization module includes：
Constant voltage source V, its positive pole connects the common mode input of the first amplifier A1 and the second amplifier A2 difference
Mould input, negative pole ground connection；
3rd ballast resistance R1, one terminates the positive pole of constant voltage source, one end ground connection；
4th ballast resistance R2, one terminates the positive pole of constant voltage source, one end ground connection；
The 3rd ballast resistance R1 and the 4th ballast resistance R2 resistances are equal.
Detailed construction is specifically introduced below.
The radioinduction detector is mainly the radiosensitive field-effect transistor being made up of special process.Due to radiation
The oxide trap produced afterwards is with interface trapped charge so that MOSFET threshold voltages drift about.Floated by demarcating threshold voltage
The relation of shifting amount and irradiation dose, measures the size that threshold voltage shift measures dose of radiation.It is, in general, that NMOS is radiated
Afterwards, oxide-trapped charge makes its threshold voltage occur negative sense drift, but interface charge makes its threshold voltage occur positive drift
Move；The oxide-trapped charge and interface charge produced after PMOS radiation all causes its threshold voltage negative sense to drift about, here it is one
As using pmos fet as integral dose radiation detector the reason for.
After radiation, the threshold voltage of the PMOS in saturation region produces negative sense drift, according to PMOS transistor saturation region
Current formula：
According to the current formula of PMOS transistor saturation region：
Wherein, IDRepresent the source-drain current of metal-oxide-semiconductor, μPThe mobility in hole in PMOS is represented, W and L represent metal-oxide-semiconductor respectively
Wide and long, COXRepresent grid oxygen electric capacity, VGSRepresent gate source voltage, VTHIt is threshold voltage.
M1 and M2 are radiosensitive PMOSs, and wherein M1 receives radiation signal as radiation detector, and M2 is used as reference
Transistor, is placed in radiationless environment, and contrast signal is provided for M1, and the size and technique of M1 and M2 transistors are equal.In order that
Circuit structure is symmetrical, and M2 also selects radiosensitive transistor herein.
Resistance from the three, the 4th ballast resistance R1, R2 is equal, and the electric current for flowing through R1 and R2 is equal, by Kiel suddenly
Husband's current law understands that the electric current for flowing through first, second PMOS M1, M2 is also equal.Receive after radiating, M1 threshold voltage
Change, due to stabilization of the constant-current source to electric current, the size of current in M1 keeps constant, therefore M1 grid voltage must
Corresponding change must be produced, and the first amplifier A1 difference-mode input end is transferred to by the first ballast resistance R3, by A1 handles
M1 grid and the voltage difference amplification of drain electrode.At the same time, transistor M2 does not receive radiation, and its electric current and voltage are all kept not
Become, equal with the electric current before M1 receives radiation, magnitude of voltage, A2 is the reference electricity between the grid of the M2 before radiation and drain electrode
Piezoelectricity pressure difference amplifies and exported.
The output of radioinduction module and referrer module connects the 3rd amplifier A3 common mode, difference-mode input end, two respectively
Difference between person by A3 amplify after export, finally obtained the voltage after amplification.Integral dose radiation can be calculated accordingly
Size.Finally by the change of the voltage after the final amplification of measurement, and according to the multiplication factor of circuit design, you can calculate spoke
The knots modification of sensitive PMOS transistor threshold voltage is penetrated, and finally obtains the size of integral dose radiation.
Those skilled in the art can select first, second, third required amplifier A1, A2, A3 as needed, and design
Relevant parameter, is amplified and exports to set certain multiplication factor differential signal.
Compared with prior art, the present invention can be by using constant current source by as produced by radiosensitive PMOS
Electric current, is converted to the change of the terminal potential of source and drain two, as the Differential Input of differential amplifier circuit, realizes radiation-induced list
To and small threshold voltage variation is transformed into the voltage of larger two-way change so that the detection to total radiation dose becomes easy
It is easy.Compared with prior art, it is not only simple easy, and circuit structure is simple, without unnecessary consuming components, significantly reduces
Power consumption.
Although the present invention and its advantage are described in detail in conjunction with specific embodiments, it should be understood that do not departing from this
In the case of the spiritual and defined in the appended claims protection domain of invention, can to these embodiments carry out various change,
Substitutions and modifications.For other examples, one of ordinary skill in the art, which should be readily appreciated that, is keeping the scope of the present invention
While interior, the order of processing step can change.
In addition, the application of the present invention is not limited to technique, mechanism, the system of the specific embodiment described in specification
Make, material composition, means, method and step., will be easy as one of ordinary skill in the art from the disclosure
Ground understands, for current technique that is existing or will developing later, mechanism, manufacture, material composition, means, method or
Step, the knot that the function or acquisition that wherein their execution are substantially the same with the corresponding embodiment that the present invention is described are substantially the same
Really, they can be applied according to the present invention.Therefore, appended claims of the present invention are intended to these techniques, mechanism, system
Make, material composition, means, method or step are included in its protection domain.
Claims (8)
1. a kind of radiation detection circuit, including：
The first PMOS transistor (M1) for sensing radiation to be measured；
The first amplifier (A1) being connected with the first PMOS transistor (M1)；
The second PMOS transistor (M2) of radiation to be measured is not sensed；
The second amplifier (A2) being connected with the second PMOS transistor (M2)；And
Comparison module, for the output of the first amplifier (A1) and the second amplifier (A2) to be compared, and its difference is entered
Row amplification output, wherein,
First amplifier (A1) is operational amplifier, and the source electrode of first PMOS transistor (M1) connects supply voltage, leakage
Pole connects the common mode input of the first amplifier (A1), and grid connects the difference-mode input end of first amplifier (A1), described
The common mode input of the output connection comparison module of first amplifier (A1)；
Second amplifier (A2) is operational amplifier, and the source electrode of second PMOS transistor (M2) connects supply voltage, leakage
Pole connects the difference-mode input end of the second amplifier (A2), and grid connects the common mode input of second amplifier (A2), described
The difference-mode input end of the output connection comparison module of second amplifier (A2).
2. radiation detection circuit according to claim 1, it is characterised in that the grid of first PMOS transistor (M1)
And first amplifier (A1) difference-mode input end between exist the first ballast resistance (R3).
3. radiation detection circuit according to claim 1, it is characterised in that the grid of second PMOS transistor (M2)
And second amplifier (A2) common mode input between exist the second ballast resistance (R4).
4. the radiation detection circuit described in any one in claims 1 to 3, it is characterised in that the first PMOS crystal
Manage that (M1) is identical with the second PMOS transistor (M2) configuration, the first amplifier (A1) and the second amplifier (A2's) configures
It is exactly the same.
5. radiation detection circuit according to claim 1, it is characterised in that first, second PMOS transistor (M1,
M2 saturation region) is worked in.
6. radiation detection circuit according to claim 1, it is characterised in that the comparison module includes the 3rd amplifier
(A3), its output signal reflects the size of radiation to be measured.
7. radiation detection circuit according to claim 1, it is characterised in that the radiation detection circuit also includes current stabilization mould
Block, the current stabilization module is used to provide equal steady for the drain electrode of the first PMOS transistor (M1) and the second PMOS transistor (M2)
Determine electric current.
8. radiation detection circuit according to claim 7, it is characterised in that the current stabilization module includes：
Constant voltage source (V), its positive pole connects the common mode input and the second amplifier (A2) of first amplifier (A1)
Difference-mode input end, negative pole ground connection；
3rd ballast resistance (R1), one terminates the positive pole of constant voltage source, one end ground connection；
4th ballast resistance (R2), one terminates the positive pole of constant voltage source, one end ground connection；
3rd ballast resistance (R1) and the 4th ballast resistance (R2) resistance are equal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410594524.8A CN104345328B (en) | 2014-10-29 | 2014-10-29 | radiation detection circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410594524.8A CN104345328B (en) | 2014-10-29 | 2014-10-29 | radiation detection circuit |
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| CN104345328A CN104345328A (en) | 2015-02-11 |
| CN104345328B true CN104345328B (en) | 2017-09-15 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4976266A (en) * | 1986-08-29 | 1990-12-11 | United States Department Of Energy | Methods of in vivo radiation measurement |
| CN1605886A (en) * | 2004-11-17 | 2005-04-13 | 中国科学院新疆理化技术研究所 | Geminate transistors type PMOS radiation dose meter with difference output |
| KR101013178B1 (en) * | 2007-12-31 | 2011-02-10 | 한국원자력연구원 | Dual Gate MOSFET Radiation Dosimeter |
| EP2293107A2 (en) * | 2009-08-14 | 2011-03-09 | The Boeing Company | Dosimeter and associated method of measuring radiation |
| EP2381273A2 (en) * | 2010-04-22 | 2011-10-26 | Uryupin, Oleg | Personal dosimeter on the base of radiation integrated circuit |
-
2014
- 2014-10-29 CN CN201410594524.8A patent/CN104345328B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4976266A (en) * | 1986-08-29 | 1990-12-11 | United States Department Of Energy | Methods of in vivo radiation measurement |
| CN1605886A (en) * | 2004-11-17 | 2005-04-13 | 中国科学院新疆理化技术研究所 | Geminate transistors type PMOS radiation dose meter with difference output |
| KR101013178B1 (en) * | 2007-12-31 | 2011-02-10 | 한국원자력연구원 | Dual Gate MOSFET Radiation Dosimeter |
| EP2293107A2 (en) * | 2009-08-14 | 2011-03-09 | The Boeing Company | Dosimeter and associated method of measuring radiation |
| EP2381273A2 (en) * | 2010-04-22 | 2011-10-26 | Uryupin, Oleg | Personal dosimeter on the base of radiation integrated circuit |
Non-Patent Citations (2)
| Title |
|---|
| A design solution to increasing the sensitivity of pMOS dosimeters: the stacked RADFET approach;A.Kelleher et al.;《IEEE transactions on nuclear science》;19950228;第42卷(第1期);第48-51页 * |
| PMOS辐照检测传感器;陈德英 等;《传感器技术》;20021231(第1期);第3-6页 * |
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Effective date of registration: 20220825 Address after: Room 108, floor 1, building 4, No. 2 dacuodeng Hutong, Dongcheng District, Beijing 100010 Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |