CN104345328A - Radiation detection circuit - Google Patents
Radiation detection circuit Download PDFInfo
- Publication number
- CN104345328A CN104345328A CN201410594524.8A CN201410594524A CN104345328A CN 104345328 A CN104345328 A CN 104345328A CN 201410594524 A CN201410594524 A CN 201410594524A CN 104345328 A CN104345328 A CN 104345328A
- Authority
- CN
- China
- Prior art keywords
- amplifier
- pmos transistor
- detection circuit
- radiation detection
- input end
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention provides a radiation detection circuit. The radiation detection circuit comprises a first PMOS (P-channel Metal Oxide Semiconductor) transistor for sensing to-be-detected radiation, a first amplifier which is connected with the first PMOS transistor, a second PMOS transistor which does not sense the to-be-detected radiation, a second amplifier which is connected with the second PMOS transistor and a comparison module which is used for comparing the output of the first amplifier with the output of the second amplifier and for amplifying and outputting the differential value. By adopting the radiation detection circuit, the structure of the radiation detection circuit is simplified, and the power consumption can be greatly reduced when compared with the prior art.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of radiation detection circuit.
Background technology
In space, under a lot of electronic equipment all can be exposed to certain radiation environment.In order to ensure the reliability of these electronic equipments, necessary to the detection of integral dose radiation.Because once total radiation dose exceedes a certain amount, the inefficacy of electronic system will be caused.
PMOS integral dose radiation detector mainly comprises the radiosensitive field effect transistor be made up of special process.Because the oxide trap that produces after radiation and interface trapped charge make MOSFET threshold voltage drift about.By demarcating the relation of threshold voltage shift amount and irradiation dose, measure the size that threshold voltage shift measures radiation dose.In general, after NMOS radiation, oxide-trapped charge makes its threshold voltage generation negative sense drift about, but interfacial charge makes its threshold voltage generation positive excursion; The oxide-trapped charge produced after PMOS radiation and interfacial charge all make its threshold voltage negative sense drift about, and therefore most integral dose radiation detection circuit generally adopts pmos fet as integral dose radiation detector.
From above-mentioned principle, circuit is designed in the change that can produce according to pMOS transistor threshold voltage, enables the size reflecting suffered integral dose radiation environment.As shown in Figure 1, be the detection circuit schematic diagram of prior art, simulating signal, by four main module compositions, can be converted into digital signal and export by this sensing circuit.Therefore this detection circuit is in order to meet some digital automation system and too complicated.But in general application, do not need AD conversion.
Therefore, it is desirable to propose a kind of can application in the lab, comparatively simple pMOS integral dose radiation observation circuit.
The radiation detection circuit of prior art adopts AD conversion.The present inventor finds, without AD conversion, adopts analog device, can realize radiation detection accurately equally, and this spline structure is simpler, power consumption is lower.The feature that the oxide-trapped charge that the present invention produces after utilizing PMOS radiation and interfacial charge all make threshold voltage negative sense drift about, utilizes the relation of threshold voltage shift amount and irradiation dose, senses radiation to be measured by the first PMOS transistor.Due to the impact of radiation to be measured, make the output offset of the first PMOS transistor, amplify through the first amplifier.And the second PMOS transistor is without raying, its output is also amplified through the second amplifier.First amplifier and the second amplifier amplifying signal compare through comparison module again, and this exports the skew of the output voltage that just can reflect the first PMOS transistor that the impact due to radiation causes, and this skew reflects radiant quantity.In this way, adopt simple mimic channel, still can realize the object detecting radiation to be measured, reach with the effect of simpler radiation, lower power consumption detection radiation.
Summary of the invention
An object of the present invention is to provide the radiation detection circuit that a kind of structure is simpler, power consumption is lower.
The invention provides a kind of radiation detection circuit, comprising: for sensing the first PMOS transistor of radiation to be measured; The first amplifier be connected with the first PMOS transistor; Do not sense the second PMOS transistor of radiation to be measured; The second amplifier be connected with the second PMOS transistor; And comparison module, for the output of the first amplifier and the second amplifier being compared, and its difference is carried out amplification output.
Alternatively, first amplifier is operational amplifier, the source electrode of described first PMOS transistor connects supply voltage, the common mode input end of drain electrode connection first amplifier, grid connects the difference-mode input end of described first amplifier, and the output of described first amplifier connects the common mode input end of described comparison module.
Alternatively, there is the first ballast resistance between the grid of described first PMOS transistor and the difference-mode input end of the first amplifier.
Alternatively, second amplifier is operational amplifier, the source electrode of described second PMOS transistor connects supply voltage, the difference-mode input end of drain electrode connection second amplifier, grid connects the common mode input end of described second amplifier, and the output of described second amplifier connects the difference-mode input end of described comparison module.
Alternatively, there is the second ballast resistance between the grid of described second PMOS transistor and the common mode input end of the second amplifier.
Alternatively, the first PMOS transistor is identical with the second PMOS transistor configuration, and the first amplifier is identical with the configuration of the second amplifier.
Alternatively, first, second PMOS transistor described works in saturation region.
Alternatively, described comparison module comprises the 3rd amplifier, the size of its output signal reflection radiation to be measured.
Alternatively, described radiation detection circuit also comprises current stabilization module, and described current stabilization module is used for providing equal steady current for the drain electrode of the first PMOS transistor and the second PMOS transistor.
Alternatively, described current stabilization module comprises: constant voltage source, and its positive pole connects the common mode input end of described first amplifier and the difference-mode input end of the second amplifier, minus earth; 3rd ballast resistance, the positive pole of one termination constant voltage source, one end ground connection; 4th ballast resistance, the positive pole of one termination constant voltage source, one end ground connection; Described 3rd ballast resistance is equal with the 4th ballast resistance resistance.
Accompanying drawing explanation
By reading the detailed description done non-limiting example done with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious.
Fig. 1 is the radiation detection circuit diagram of prior art;
The structural drawing of Fig. 2 radiation detection circuit according to an embodiment of the invention.
Embodiment
Embodiments of the invention are described below in detail.
The example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.Disclosing hereafter provides many different embodiments or example is used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter the parts of specific examples and setting are described.Certainly, they are only example, and object does not lie in restriction the present invention.
The invention provides a kind of PMOS radiation detection circuit based on operational amplifier.Below, by by one embodiment of the present of invention, the radiation detection circuit shown in Fig. 2 is specifically described.As shown in Figure 2, radiation detection circuit provided by the present invention comprises following structure:
For sensing the first PMOS transistor M1 of radiation to be measured;
The the first amplifier A1 be connected with the first PMOS transistor M1;
Do not sense the second PMOS transistor M2 of radiation to be measured;
The the second amplifier A2 be connected with the second PMOS transistor M2; And
Comparison module, for the output of the first amplifier A1 and the second amplifier A2 being compared, and carries out amplification output by its difference.
Alternatively, first amplifier A1 is operational amplifier, the source electrode of described first PMOS transistor M1 connects supply voltage, the common mode input end of drain electrode connection first amplifier A1, grid connects the difference-mode input end of described first amplifier A1, and the output of described first amplifier A1 connects the common mode input end of described comparison module.But the first amplifier also can adopt other amplifier, as long as can amplify the signal that the first PMOS exports.The signal exported due to a PMOS is too little, cannot directly measure or enter comparison module and compare, therefore will through the first amplifier.Adopt operational amplifier to be conducive to structure and simply, further reduce power consumption further.
Alternatively, there is the first ballast resistance R3 between the grid of described first PMOS transistor M1 and the difference-mode input end of the first amplifier A1.It is conducive to stablizing the electric current between the grid of described first PMOS transistor M1 and the difference-mode input end of the first amplifier A1.
Preferably, second amplifier A2 is operational amplifier, the source electrode of described second PMOS transistor M2 connects supply voltage, the difference-mode input end of drain electrode connection second amplifier A2, grid connects the common mode input end of described second amplifier A2, and the output of described second amplifier A2 connects the difference-mode input end of described comparison module.But the second amplifier also can adopt other amplifier, as long as can amplify the signal that the second PMOS exports.The signal exported due to the 2nd PMOS is too little, cannot directly measure or enter comparison module and compare, therefore will through the second amplifier.Adopt operational amplifier to be conducive to structure and simply, further reduce power consumption further.
Alternatively, there is the second ballast resistance R4 between the grid of described second PMOS transistor M2 and the common mode input end of the second amplifier A2.Its effect and R3 similar.
Wherein, the first PMOS transistor M1 is identical with the second PMOS transistor M2 configuration, and the first amplifier A1 is identical with the configuration of the second amplifier A2.
Wherein, first, second PMOS transistor M1 described, M2 work in saturation region.
Alternatively, described comparison module comprises the 3rd amplifier A3, the size of its output signal reflection radiation to be measured.But also can adopt other comparison module, as the comparator circuit built.
Wherein, described radiation detection circuit also comprises current stabilization module, and described current stabilization module is used for providing equal steady current for the drain electrode of the first PMOS transistor M1 and the second PMOS transistor M2.
Wherein, described current stabilization module comprises:
Constant voltage source V, its positive pole connects the common mode input end of described first amplifier A1 and the difference-mode input end of the second amplifier A2, minus earth;
3rd ballast resistance R1, the positive pole of one termination constant voltage source, one end ground connection;
4th ballast resistance R2, the positive pole of one termination constant voltage source, one end ground connection;
Described 3rd ballast resistance R1 is equal with the 4th ballast resistance R2 resistance.
Below detailed construction is specifically introduced.
The radiosensitive field effect transistor that described radioinduction detector is mainly made up of special process.Because the oxide trap that produces after radiation and interface trapped charge make MOSFET threshold voltage drift about.By demarcating the relation of threshold voltage shift amount and irradiation dose, measure the size that threshold voltage shift measures radiation dose.In general, after NMOS radiation, oxide-trapped charge makes its threshold voltage generation negative sense drift about, but interfacial charge makes its threshold voltage generation positive excursion; The oxide-trapped charge produced after PMOS radiation and interfacial charge all make its threshold voltage negative sense drift about, and Here it is generally adopts pmos fet as the reason of integral dose radiation detector.
After radiation, the threshold voltage being in the PMOS of saturation region produces negative sense drift, the current formula according to PMOS transistor saturation region:
Current formula according to PMOS transistor saturation region:
Wherein, I
drepresent the source-drain current of metal-oxide-semiconductor, μ
prepresent the mobility in hole in PMOS, W and L represents the wide of metal-oxide-semiconductor and length respectively, C
oXrepresent grid oxygen electric capacity, V
gSrepresent gate source voltage, V
tHit is threshold voltage.
M1 and M2 is radiosensitive PMOS, and wherein M1 is as radiation detector, accepts radiation signal, and M2 is as reference transistor, and be placed in radiationless environment, for M1 provides contrast signal, size and the technique of M1 and M2 transistor are equal.In order to make circuit structure symmetrical, M2 also selects radiosensitive transistor herein.
Equal from the resistance of the 3rd, the 4th ballast resistance R1, R2, the electric current flowing through R1 and R2 is equal, from Kirchhoff's current law (KCL), flow through first, second PMOS M1, M2 electric current also equal.After received radiation, the threshold voltage of M1 changes, because constant current source is to the stabilization of electric current, size of current in M1 remains unchanged, therefore the grid voltage of M1 must produce corresponding change, and the difference-mode input end of the first amplifier A1 is transferred to by the first ballast resistance R3, through A1, the voltage difference of the grid of M1 and drain electrode is amplified.Meanwhile, transistor M2 does not accept radiation, and its electric current and voltage all remain unchanged, and the electric current before accepting radiation with M1, magnitude of voltage are equal, and A2 amplifies the reference voltage voltage difference between the grid of the M2 before radiation and drain electrode export.
Radioinduction module and the output of referrer module are connected common mode, the difference-mode input end of the 3rd amplifier A3 respectively, and difference between the two exports after being amplified by A3, finally obtains the voltage after amplification.The size of integral dose radiation can be calculated accordingly.Finally by the change of the voltage measured after final amplification, and according to the enlargement factor of circuit design, the knots modification of radiosensitive PMOS transistor threshold voltage can be calculated, and finally obtain the size of integral dose radiation.
Those skilled in the art can select first, second, third required amplifier A1, A2, A3 as required, and design correlation parameter, set certain enlargement factor differential signal and carry out amplifying and exporting.
Compared with prior art, the present invention can by the electric current using constant current source will to be produced by radiosensitive PMOS, be converted to the change of source and drain two terminal potential, as the Differential Input of differential amplifier circuit, achieve the voltage radiation-induced unidirectional and small threshold voltage variation being transformed into larger two-way change, make to become simple and easy to do to the detection of total radiation dose.Compared with prior art, not only simple and easy to do, and circuit structure is simple, without unnecessary consuming components, significantly reduces power consumption.
Although be described in detail the present invention and advantage thereof in conjunction with specific embodiments, be to be understood that when not departing from the protection domain of spirit of the present invention and claims restriction, various change, substitutions and modifications can have been carried out to these embodiments.For other examples, those of ordinary skill in the art should easy understand maintenance scope in while, the order of processing step can change.
In addition, range of application of the present invention is not limited to the technique of the specific embodiment described in instructions, mechanism, manufacture, material composition, means, method and step.From disclosure of the present invention, to easily understand as those of ordinary skill in the art, for the technique existed at present or be about to develop, mechanism, manufacture, material composition, means, method or step later, wherein their perform the identical function of the corresponding embodiment cardinal principle that describes with the present invention or obtain the identical result of cardinal principle, can apply according to the present invention to them.Therefore, claims of the present invention are intended to these technique, mechanism, manufacture, material composition, means, method or step to be included in its protection domain.
Claims (10)
1. a radiation detection circuit, comprising:
For sensing first PMOS transistor (M1) of radiation to be measured;
The first amplifier (A1) be connected with the first PMOS transistor (M1);
Do not sense second PMOS transistor (M2) of radiation to be measured;
The second amplifier (A2) be connected with the second PMOS transistor (M2); And
Comparison module, for the output of the first amplifier (A1) and the second amplifier (A2) being compared, and carries out amplification output by its difference.
2. radiation detection circuit according to claim 1, it is characterized in that, first amplifier (A1) is operational amplifier, the source electrode of described first PMOS transistor (M1) connects supply voltage, the common mode input end of drain electrode connection first amplifier (A1), grid connects the difference-mode input end of described first amplifier (A1), and the output of described first amplifier (A1) connects the common mode input end of described comparison module.
3. radiation detection circuit according to claim 2, is characterized in that, there is the first ballast resistance (R3) between the grid of described first PMOS transistor (M1) and the difference-mode input end of the first amplifier (A1).
4. radiation detection circuit according to claim 1, it is characterized in that, second amplifier (A2) is operational amplifier, the source electrode of described second PMOS transistor (M2) connects supply voltage, the difference-mode input end of drain electrode connection second amplifier (A2), grid connects the common mode input end of described second amplifier (A2), and the output of described second amplifier (A2) connects the difference-mode input end of described comparison module.
5. radiation detection circuit according to claim 4, is characterized in that, there is the second ballast resistance (R4) between the grid of described second PMOS transistor (M2) and the common mode input end of the second amplifier (A2).
6. the radiation detection circuit according to any one in claim 1 to 5, it is characterized in that, first PMOS transistor (M1) configures identical with the second PMOS transistor (M2), and the first amplifier (A1) is identical with the configuration of the second amplifier (A2).
7. radiation detection circuit according to claim 1, is characterized in that, described first, second PMOS transistor (M1, M2) works in saturation region.
8. radiation detection circuit according to claim 1, is characterized in that, described comparison module comprises the 3rd amplifier (A3), the size of its output signal reflection radiation to be measured.
9. radiation detection circuit according to claim 1, it is characterized in that, described radiation detection circuit also comprises current stabilization module, and described current stabilization module is used for being that the drain electrode of the first PMOS transistor (M1) and the second PMOS transistor (M2) provides equal steady current.
10. radiation detection circuit according to claim 9, is characterized in that, described current stabilization module comprises:
Constant voltage source (V), its positive pole connects the common mode input end of described first amplifier (A1) and the difference-mode input end of the second amplifier (A2), minus earth;
3rd ballast resistance (R1), the positive pole of one termination constant voltage source, one end ground connection;
4th ballast resistance (R2), the positive pole of one termination constant voltage source, one end ground connection;
Described 3rd ballast resistance (R1) is equal with the 4th ballast resistance (R2) resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410594524.8A CN104345328B (en) | 2014-10-29 | 2014-10-29 | radiation detection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410594524.8A CN104345328B (en) | 2014-10-29 | 2014-10-29 | radiation detection circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104345328A true CN104345328A (en) | 2015-02-11 |
| CN104345328B CN104345328B (en) | 2017-09-15 |
Family
ID=52501340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410594524.8A Active CN104345328B (en) | 2014-10-29 | 2014-10-29 | radiation detection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104345328B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4976266A (en) * | 1986-08-29 | 1990-12-11 | United States Department Of Energy | Methods of in vivo radiation measurement |
| CN1605886A (en) * | 2004-11-17 | 2005-04-13 | 中国科学院新疆理化技术研究所 | Geminate transistors type PMOS radiation dose meter with difference output |
| KR101013178B1 (en) * | 2007-12-31 | 2011-02-10 | 한국원자력연구원 | Dual Gate MOSFET Radiation Dosimeter |
| EP2293107A2 (en) * | 2009-08-14 | 2011-03-09 | The Boeing Company | Dosimeter and associated method of measuring radiation |
| EP2381273A2 (en) * | 2010-04-22 | 2011-10-26 | Uryupin, Oleg | Personal dosimeter on the base of radiation integrated circuit |
-
2014
- 2014-10-29 CN CN201410594524.8A patent/CN104345328B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4976266A (en) * | 1986-08-29 | 1990-12-11 | United States Department Of Energy | Methods of in vivo radiation measurement |
| CN1605886A (en) * | 2004-11-17 | 2005-04-13 | 中国科学院新疆理化技术研究所 | Geminate transistors type PMOS radiation dose meter with difference output |
| KR101013178B1 (en) * | 2007-12-31 | 2011-02-10 | 한국원자력연구원 | Dual Gate MOSFET Radiation Dosimeter |
| EP2293107A2 (en) * | 2009-08-14 | 2011-03-09 | The Boeing Company | Dosimeter and associated method of measuring radiation |
| EP2381273A2 (en) * | 2010-04-22 | 2011-10-26 | Uryupin, Oleg | Personal dosimeter on the base of radiation integrated circuit |
Non-Patent Citations (2)
| Title |
|---|
| A.KELLEHER ET AL.: "A design solution to increasing the sensitivity of pMOS dosimeters: the stacked RADFET approach", 《IEEE TRANSACTIONS ON NUCLEAR SCIENCE》 * |
| 陈德英 等: "PMOS辐照检测传感器", 《传感器技术》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104345328B (en) | 2017-09-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104729724B (en) | Single-photon avalanche diode quenching circuit based on Offset control differential amplification structure | |
| US8232781B2 (en) | Device for measuring the current flowing through a power transistor of a voltage regulator | |
| GB2484245B (en) | A wide dynamic range electrometer with a fast response | |
| CN104614404B (en) | Ion sensitive field effect transistor sensor and its reading circuit | |
| CN101871963A (en) | Power voltage detection circuit | |
| CN102156211A (en) | Full-CMOS (complementary metal-oxide-semiconductor transistor) accurate current sampling circuit | |
| CN103344897B (en) | A kind of non-destructive power MOS pipe single event burnout effect detection circuit and method | |
| CN104897943A (en) | High-sensitivity low-power current detection circuit | |
| CN202008499U (en) | Current sampling circuit | |
| CN102354246B (en) | Active clamping circuit | |
| CN104345328A (en) | Radiation detection circuit | |
| CN104345329A (en) | Radiation detection circuit | |
| CN104407373B (en) | radiation detection circuit | |
| CN207133762U (en) | A kind of electrification reset circuit of no quiescent dissipation | |
| CN110389617A (en) | Current subtraction circuit | |
| JP2015195353A5 (en) | ||
| Sohbati et al. | A temperature insensitive continuous time ΔpH to digital converter | |
| CN101382816A (en) | Constant current circuit | |
| Aimaier et al. | Transistor sizing methodology for low noise charge sensitive amplifier with input transistor working in moderate inversion | |
| CN202275331U (en) | Active clamping circuit | |
| Carrillo et al. | Design considerations on CMOS bulk-driven differential input stages | |
| US8416021B2 (en) | Amplifier circuit | |
| Pullia et al. | Design of a resistorless ASIC preamplifier for HPGe detectors with non-linear pole/zero cancellation and controlled fast-reset feature | |
| Zarkesh-Ha et al. | Avalanche ISFET: A highly sensitive pH sensor for genome sequencing | |
| CN104391315B (en) | radiation detection circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220825 Address after: Room 108, floor 1, building 4, No. 2 dacuodeng Hutong, Dongcheng District, Beijing 100010 Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |