CN104332436B - A kind of water cooling chuck structure inside etching machine - Google Patents

A kind of water cooling chuck structure inside etching machine Download PDF

Info

Publication number
CN104332436B
CN104332436B CN201410666275.9A CN201410666275A CN104332436B CN 104332436 B CN104332436 B CN 104332436B CN 201410666275 A CN201410666275 A CN 201410666275A CN 104332436 B CN104332436 B CN 104332436B
Authority
CN
China
Prior art keywords
helium
distribution grid
water
water channel
seal plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410666275.9A
Other languages
Chinese (zh)
Other versions
CN104332436A (en
Inventor
游利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Xianfeng Precision Technology Co ltd
Original Assignee
JINGJIANG PIONEER SEMICONDUCTOR TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JINGJIANG PIONEER SEMICONDUCTOR TECHNOLOGY Co Ltd filed Critical JINGJIANG PIONEER SEMICONDUCTOR TECHNOLOGY Co Ltd
Priority to CN201410666275.9A priority Critical patent/CN104332436B/en
Publication of CN104332436A publication Critical patent/CN104332436A/en
Application granted granted Critical
Publication of CN104332436B publication Critical patent/CN104332436B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A kind of water cooling chuck structure inside etching machine, including helium distribution grid, water channel distribution grid, seal plate for water passage, corresponding avoidance hole through hole is all uniformly arranged on helium distribution grid, water channel distribution grid and seal plate for water passage surface, is passed through for pallet charging crane;Corresponding helium bullport is additionally provided with described water channel distribution grid, seal plate for water passage surface;Described helium distribution grid, water channel distribution grid and seal plate for water passage is combined as a whole in the presence of vacuum brazing successively, two groups of different inputs of composition, output gas and water passage.The present invention designs a cyclic water channel, a circulation air passage structure by the different internal structure design of three ply board, non-interference, realizes two kinds of coolings, function of temperature control.Ensure the quality of operating temperature control in sapphire sheet and etch chamber in etching process, substantially prolongs the service life of equipment.

Description

A kind of water cooling chuck structure inside etching machine
Technical field
The present invention relates to semiconductor technology processing equipment-LED ICP etching machines, more particularly to a kind of LED ICP etching machines Internal water cooling chuck structure.
Background technology
LED etching machines are integrated with high-density plasma source, the full-automatic matching radio system of quick response, accurate chamber Temperature control system, stable high-precision pressure control system, advanced central nozzle gas handling system and unique chamber surfaces The multinomial advanced technologies such as processing, the etching of LED field higher performance is realized with IC etching technics more accurate design requirement Technique, is adapted to the different size pattern piece requirement of different clients, obtains excellent etching technics result.Water cooling chuck is chamber The core component of room temperature control.Helium enters pallet from the stomata on water cooling chuck upper strata, realizes the cooling of sapphire sheet;Simultaneously The current passed through out of cooling chuck lower floor water channel take away the heat in etch chamber, realize temperature control.The upper strata of water cooling chuck The structures of helium passages, lower floor's water channel distribution directly affect operating temperature control in sapphire sheet and etch chamber in etching process Quality.
The content of the invention
It is an object of the invention to provide the water cooling chuck structure inside a kind of LED etching machines.The present invention passes through following skill What art scheme was realized:
A kind of water cooling chuck structure inside etching machine, including helium distribution grid, water channel distribution grid, seal plate for water passage, its It is characterised by:Corresponding avoidance hole is all uniformly arranged on helium distribution grid, water channel distribution grid and seal plate for water passage surface to lead to Hole, passes through for pallet charging crane;Corresponding helium is additionally provided with described water channel distribution grid, seal plate for water passage surface Bullport;Described helium distribution grid, water channel distribution grid and seal plate for water passage is combined into one in the presence of vacuum brazing successively Body, two groups of different inputs of composition, output gas and water passage.
Three distribution circles are provided with described helium distribution plate surface, is each distributed on round week and has been uniformly arranged helium Outmost turns are additionally provided with sealed groove on hole, surface;Radial direction spacing between three described distribution circles is equal;Described helium Hole is communicated with the helium guiding groove that the back side is set.
The two helium bullports set in described water channel distribution plate surface are used to guide helium to enter helium distribution grid On helium guiding groove, uniformly 12 U-shaped breach counterbores are designed with the step of outer ring, for water cooling chuck to be arranged on etch chamber On;The back side is designed with the channel structure for covering big region.
Described seal plate for water passage appearance and size is identical with water channel distribution grid, outer ring uniform 12 through holes and water on surface U-shaped breach counterbore is corresponding on road distribution grid, and two helium bullports are corresponding with the helium bullport on water channel distribution grid;Two Individual current bullport is corresponding with the channel structure two-end-point on water channel distribution grid, for flowing into and out for cooling water.
Described helium distribution grid, water channel distribution grid and seal plate for water passage material is 6061-T6 aluminium alloys.
The sealed groove that outmost turns are set in described helium distribution plate surface, for installing sealing ring, prevent helium to Revealed in etch chamber.
Helium distribution grid, water channel distribution grid and seal plate for water passage are combined into one by the present invention in the presence of vacuum brazing Body.By the different internal structure design of three ply board, a cyclic water channel, a circulation air passage structure are designed, it is non-interference, Realize two kinds of coolings, function of temperature control.Ensure the quality of operating temperature control in sapphire sheet and etch chamber in etching process, significantly Extend the service life of equipment.
Brief description of the drawings
Fig. 1 is the front view in helium distributing plate structure schematic diagram of the present invention;
Fig. 2 is Figure 1A-A directions sectional view;
Fig. 3 is the rearview in helium distributing plate structure schematic diagram of the present invention;
Fig. 4 is the front view in water channel distributing plate structure schematic diagram of the present invention;
Fig. 5 is Fig. 4 A-A directions sectional view;
Fig. 6 is the rearview in water channel distributing plate structure schematic diagram of the present invention;
Fig. 7 is the front view in seal plate for water passage structural representation of the present invention;
Fig. 8 is Fig. 7 A-A directions sectional view;
Fig. 9 is the rearview in seal plate for water passage structural representation of the present invention;
Figure 10 is the front view in the general assembly structural representation of water cooling chuck of the present invention;
Figure 11 is Figure 10 A-A directions sectional view;
Figure 12 is the rearview in the general assembly structural representation of water cooling chuck of the present invention;
1. helium hole, 2. avoidance holes, 3. sealed grooves, 4. helium guiding grooves, 5. helium bullports, 6.U v notch v counterbores, 7. channel structure, 8. current are led the way hole, 9. positioning holes, 10. through holes.
Embodiment
The invention will be further described below in conjunction with the accompanying drawings;
A kind of water cooling chuck structure inside etching machine, including helium distribution grid, water channel distribution grid, seal plate for water passage, its It is characterised by:Corresponding avoidance hole 2 is all uniformly arranged on helium distribution grid, water channel distribution grid and seal plate for water passage surface to lead to Hole, passes through for pallet charging crane;Corresponding helium is additionally provided with described water channel distribution grid, seal plate for water passage surface Bullport 5;Described helium distribution grid, water channel distribution grid and seal plate for water passage is combined into one in the presence of vacuum brazing successively Body, two groups of different inputs of composition, output gas and water passage.
Three distribution circles are provided with described helium distribution plate surface, is each distributed on round week and has been uniformly arranged helium Outmost turns are additionally provided with sealed groove 3 on hole 1, surface;Radial direction spacing between three described distribution circles is equal;Described helium The helium guiding groove 4 that stomata 1 is set with the back side is communicated.
The two helium bullports 5 set in described water channel distribution plate surface are used to guide helium to enter helium distribution grid On helium guiding groove 4, uniformly 12 U-shaped breach counterbores 6 are designed with the step of outer ring, for water cooling chuck to be arranged on etching On chamber;The back side is designed with the channel structure 7 for covering big region.
Described seal plate for water passage appearance and size is identical with water channel distribution grid, outer ring uniform 12 through holes and water on surface U-shaped breach counterbore 6 is corresponding on road distribution grid, and two helium bullports 5 are relative with the helium bullport 5 on water channel distribution grid Should;Two current bullports 8 are corresponding with the two-end-point of channel structure 7 on water channel distribution grid, entrance and stream for cooling water Go out.
Described helium distribution grid, water channel distribution grid and seal plate for water passage material is 6061-T6 aluminium alloys.
The sealed groove 3 that outmost turns are set in described helium distribution plate surface, for installing sealing ring, prevent helium to Revealed in etch chamber.
When it is implemented, cooling water of the present invention from the back side current of seal plate for water passage lead the way one of hole inlet opening it is defeated It is defeated from seal plate for water passage back side current hole delivery port of leading the way again after being circulated along channel structure in the channel structure for entering water channel distribution grid Go out, the heat in etch chamber is taken away in process of production, the control of cavity temperature is etched by controlling the size of current to realize;Helium Gas, through the helium bullport on water channel distribution grid, enters from the air admission hole of one of the back side helium bullport of seal plate for water passage Helium guiding groove in helium distribution grid is communicated with helium hole, and the helium of input is contacted with the sapphire sheet on pallet, due to helium Outmost turns are additionally provided with sealed groove in gas distribution plate surface, for installing sealing ring, prevent helium from being revealed into etch chamber.Helium Gas takes away the heat produced in etching process, is exported through another helium bullport on water channel distribution grid, seal plate for water passage, real The temperature control of existing sapphire sheet;The charging crane of pallet passes through out of water cooling chuck, rises and landing operation realizes pallet Handling.

Claims (1)

1. the water cooling chuck structure inside a kind of etching machine, including helium distribution grid, water channel distribution grid, seal plate for water passage, it is special Levy and be:Corresponding avoidance hole (2) is all uniformly arranged on helium distribution grid, water channel distribution grid and seal plate for water passage surface to lead to Hole, passes through for pallet charging crane;Corresponding helium is additionally provided with described water channel distribution grid, seal plate for water passage surface Bullport (5);Described helium distribution grid, water channel distribution grid and seal plate for water passage is combined into the presence of vacuum brazing successively One, two groups of different inputs of composition, output gas and water passage;Three distribution circles are provided with described helium distribution plate surface, Each it is distributed on round week and has been uniformly arranged outmost turns on helium hole (1), surface and is additionally provided with sealed groove (3);Described three Radial direction spacing between individual distribution circle is equal;Described helium hole (1) is communicated with the helium guiding groove (4) that the back side is set;It is described Water channel distribution plate surface on two helium bullports (5) setting helium for being used to guide helium to enter on helium distribution grid draw 12 U-shaped breach counterbores (6) uniformly are designed with guide groove (4), outer ring step, for water cooling chuck to be arranged on etch chamber; The back side is designed with the channel structure (7) for covering big region;Described seal plate for water passage appearance and size is identical with water channel distribution grid, table 12 uniform through holes of outer ring are corresponding with U-shaped breach counterbore (6) on water channel distribution grid on face, two helium bullports (5) and Helium bullport (5) on water channel distribution grid is corresponding;Two current bullports (8) and the channel structure on water channel distribution grid (7) two-end-point is corresponding, for flowing into and out for cooling water;The sealing that outmost turns are set in described helium distribution plate surface Groove (3), for installing sealing ring, prevents helium from being revealed into etch chamber;Described helium distribution grid, water channel distribution grid and water Road sealing plate material is 6061-T6 aluminium alloys;When it is implemented, back side current bullport (8) of the cooling water from seal plate for water passage In the channel structure (7) of the inlet opening input water channel distribution grid of one of them, sealed again from water channel after being circulated along channel structure (7) Back current bullport (8) delivery port is exported, and the heat in etch chamber is taken away in process of production, by controlling the big of current The small control for realizing etching cavity temperature;Air admission hole of the helium from one of the back side helium bullport (5) of seal plate for water passage Through the helium bullport (5) on water channel distribution grid, communicated into the helium guiding groove (4) in helium distribution grid with helium hole (1), The helium of input is contacted with the sapphire sheet on pallet, because outmost turns are additionally provided with sealed groove in helium distribution plate surface (3), for installing sealing ring, helium is prevented to be revealed into etch chamber;Helium takes away the heat produced in etching process, through water channel Another helium bullport (5) output on distribution grid, seal plate for water passage, realizes the temperature control of sapphire sheet;The dress of pallet Release mechanism passes through out of water cooling chuck, rises the handling that pallet is realized with landing operation.
CN201410666275.9A 2014-11-20 2014-11-20 A kind of water cooling chuck structure inside etching machine Active CN104332436B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410666275.9A CN104332436B (en) 2014-11-20 2014-11-20 A kind of water cooling chuck structure inside etching machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410666275.9A CN104332436B (en) 2014-11-20 2014-11-20 A kind of water cooling chuck structure inside etching machine

Publications (2)

Publication Number Publication Date
CN104332436A CN104332436A (en) 2015-02-04
CN104332436B true CN104332436B (en) 2017-09-01

Family

ID=52407141

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410666275.9A Active CN104332436B (en) 2014-11-20 2014-11-20 A kind of water cooling chuck structure inside etching machine

Country Status (1)

Country Link
CN (1) CN104332436B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105428276A (en) * 2015-11-11 2016-03-23 中国电子科技集团公司第四十八研究所 Indirect water cooling planetary transmission working stage
CN106449344B (en) * 2016-10-28 2018-08-28 湘能华磊光电股份有限公司 A kind of lower tray and method improving 4 inch patterned substrate dry etching consistency
CN111403320B (en) * 2020-03-24 2023-04-07 宁波江丰电子材料股份有限公司 Cooling plate body and preparation method thereof
CN111816604B (en) * 2020-08-18 2021-03-12 北京智创芯源科技有限公司 Wafer etching method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1377568A (en) * 1999-09-29 2002-10-30 东京电子株式会社 Multi-zone resistance heater
KR101272013B1 (en) * 2011-01-25 2013-06-07 로체 시스템즈(주) Electrostatic chuck and wafer processing apparatus having the electrostatic chuck
CN204464243U (en) * 2014-11-20 2015-07-08 靖江先锋半导体科技有限公司 The water-cooled chuck structure of etching machine inside

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1377568A (en) * 1999-09-29 2002-10-30 东京电子株式会社 Multi-zone resistance heater
KR101272013B1 (en) * 2011-01-25 2013-06-07 로체 시스템즈(주) Electrostatic chuck and wafer processing apparatus having the electrostatic chuck
CN204464243U (en) * 2014-11-20 2015-07-08 靖江先锋半导体科技有限公司 The water-cooled chuck structure of etching machine inside

Also Published As

Publication number Publication date
CN104332436A (en) 2015-02-04

Similar Documents

Publication Publication Date Title
CN104332436B (en) A kind of water cooling chuck structure inside etching machine
CN104674191A (en) Multi-mode thin film deposition apparatus and thin film deposition method
CN101207001B (en) Exhaust device and reaction chamber containing the same
KR20220162772A (en) Semiconductor reaction chamber and atomic layer plasma etching equipment
CN104878370A (en) Split type temperature-controllable heating disc structure
EP3241923A1 (en) Linear evaporation source
CN100541732C (en) The method of gas distribution control system and etching polysilicon gate and separate etching silicon chip shallow plow groove
CN206312874U (en) A kind of even gas disk of plasma etching machine
TW201441414A (en) Tunable gas delivery assembly with internal diffuser and angular injection
CN104651838A (en) Gas inlet apparatus and reaction chamber
CN106671409A (en) Radiating nozzle of 3D printer
GB2589038A (en) Ionisation chamber with temperature-controlled gas feed
CN204464243U (en) The water-cooled chuck structure of etching machine inside
US10329666B2 (en) Vapor deposition apparatus
CN105779972A (en) Spray head and plasma processing device comprising same
KR102477354B1 (en) Plasma processing apparatus including gas distribution plate
JP6650808B2 (en) Holding device
CN105789009A (en) Upper cover for plasma etching equipment and plasma etching equipment
CN111430213A (en) Air inlet structure and plasma etching equipment
CN106609361A (en) Multi-gas and multi-region spraying structure
US20140332497A1 (en) Plasma processing apparatus and plasma processing method
CN104103482B (en) Wafer process cavity
CN206983261U (en) A kind of radiating nozzle of 3D printer
CN113808899A (en) High-uniformity gas path system applied to plasma processing device
CN204298458U (en) A kind of MOCVD reaction chamber

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 214500 No. 195, Xingang Avenue, Jingjiang Economic Development Zone, Taizhou City, Jiangsu Province

Patentee after: Jiangsu Xianfeng Precision Technology Co.,Ltd.

Address before: No. 8, Deyu Road, Chengnan Development Zone, Jingjiang City, Taizhou City, Jiangsu Province, 214500

Patentee before: JINGJIANG XIANFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD.