CN104321892A - 具有质量偏置装置的集成压电谐振器 - Google Patents

具有质量偏置装置的集成压电谐振器 Download PDF

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CN104321892A
CN104321892A CN201380025921.7A CN201380025921A CN104321892A CN 104321892 A CN104321892 A CN 104321892A CN 201380025921 A CN201380025921 A CN 201380025921A CN 104321892 A CN104321892 A CN 104321892A
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resonator
offset device
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bragg reflector
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B·N·伯吉斯
W·R·克莱尼克
S·M·雅各布森
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Texas Instruments Inc
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Abstract

一种集成谐振器设备(100)，包括压电谐振器(120、124、128)和邻近压电谐振器形成的声学布拉格反射器(149)。集成谐振器设备还包括形成在布拉格反射器(149)上方的质量偏置装置(170)。

Description

具有质量偏置装置的集成压电谐振器
技术领域
本发明涉及用于集成压电谐振器的设备和方法。
背景技术
时序解决方案在现代电子装置中很重要。在几乎所有的商业和消费设备中使用的计时装置提供频率控制和用于许多应用的时序。晶体振荡器作为主要类型的频率发生器已经持续了几十年。与晶体振荡器可用于控制的集成电路相比，晶体振荡器通常使用造成相当大的装置的石英。期望振荡器频率稳定且不漂移。
发明内容
公开了包括在谐振器顶部上并在塑料封装件内的质量偏置装置的集成谐振器。所增加的质量用以防止或至少减小谐振器装置随着时间变化的频率漂移。
在一些实施例中，集成谐振器设备包括：压电谐振器和与邻近压电谐振器形成的声学布拉格反射器。集成谐振器设备还包括质量偏置装置，其形成在与压电谐振器相对的一侧上的布拉格反射器上方。
其它实施例涉及在衬底上方沉积较低和较高声学阻抗材料的交替介电层。该方法进一步包括在交替介电层上方沉积第一谐振器电极，在第一谐振器电极上方沉积压电层，以及在压电层上方沉积第二谐振器电极。然后质量偏置装置沉积在谐振器上方。该方法还包括利用塑料封装质量偏置装置、第一和第二电极、压电层，以及交替介电层。
附图说明
图1示出根据本发明各种实施例的具有质量偏置装置的集成压电谐振器的横截面图；以及
图2示出根据各种实施例的集成压电谐振器的制造方法。
具体实施方式
图1示出包括合适衬底(诸如，单晶硅晶片102)的温度受控集成压电谐振器装置100。在衬底上，声学反射器104(诸如声学布拉格反射器)优选形成。声学布拉格反射器104可包括较高声学阻抗和较低声学阻抗的交替层。
在图1的示例中，在低声学阻抗材料的后续层108之后，高声学阻抗材料的第一层106被沉积。高和低声学阻抗材料的附加层110和112也被分别沉积。因此，层106和110是高声学阻抗材料，并且优选是相同的材料。类似地，层108和112是低声学阻抗材料，并且优选是相同的材料。
在一个示例中，较低声学阻抗材料可以是电介质，诸如纳米多孔氢倍半硅氧烷(HSQ)或纳米多孔甲基倍半硅氧烷(MSQ)的纳米多孔旋涂玻璃(spin-on-glasses)，所述电介质可以利用后续的固化步骤沉积在旋涂机中。
较高声学阻抗材料可以是如包括碳化硅(SiC)的电介质。如果SiC用作较高阻抗材料，在一个实例中，可使用诸如甲烷(CH4)和硅烷的混合物的源气体将SiC沉积在离子化学蒸汽沉积(CVD)的沉积室中。如果使用金刚类碳(DLC)或Si-DLC代替SiC，则利用修改的沉积室。DLC沉积在，例如，150mm平行板反应器RFCVD室中，其中上部板是气体分布源，而下部板是衬底位于其上的阴极。在该结构中，上部板是正的而阴极是负的(接地)。RF源(例如13.56MHz)可通过阴极直接耦合到衬底。在腔室抽真空之后，如果需要掺杂硅(例如四甲基二硅氧烷(4MS))，则任何烃类气体(诸如CH4和/或形成气体的硅包含烃)被引入到腔室中，直到实现所需压力并且流量稳定。除了形成气体的烃类之外，能够使用诸如氩气(Ar)和氢气(H2)的其它气体控制最终DLC膜的化学组合物。在该点处，电力被传递给阴极以击发等离子体，并且DLC沉积固定时间量，直到达到所需厚度。接着电力关闭并且腔室使用惰性气体(Ar、N2等)通风，直到达到环境压力，并去除DLC沉积的衬底。影响DLC物理性质的变量可包括：RF功率、压力、总气体流量、不同气体比率和阴极到上部板间距。在DLC沉积之前，氩等离子体可用于预调节衬底表面以沉积1-2分钟。DLC沉积可在环境温度下进行。DLC厚度和折射率能够使用例如预校准椭偏仪直接测量。
在其中一个示例中，声学布拉格反射器104的各层厚度被选择等于装置谐振频率的四分之一波长。一旦声学布拉格反射器104完成，则下一个步骤是沉积第一谐振器电极120。在其中一个实施例中，谐振器电极120被溅射沉积，并且用于电极的材料是钼(Mo)，尽管诸如钛(Ti)、钨(W)、金(Au)、铂(Pt)或铝(Al)的其它材料也是可能的。在其中一个示例中，用于谐振器电极的材料可具有低的热弹性损失，并且可具有小于约1000A的厚度，以便保持光滑表面。
在第一谐振器电极120已经沉积之后，沉积压电层124。用于压电层124的合适材料能够是氮化铝(AlN)，尽管诸如氧化锌(ZnO)和锆钛酸铅的其它材料也是可能的。在其中一个示例中，使用产生低应力、具有c轴线取向的致密层的优化工艺，利用氮气反应性溅射沉积AlN层。压电层124的厚度可以处于约0.1到约10微米的范围中。
上部电极128被沉积以完成谐振器。此外顶部电极可以是Mo的溅射沉积层。顶部布拉格反射器149也被包括并且在结构上与下部布拉格反射器104相同或类似。接触垫160和162被提供用于到装置的外部连接。接触垫160提供到上部电极128的电气接触，而接触垫162提供到下部电极128的电气接触。装置100可具有诸如氮化硅或氧化硅的保护性罩层154。
也包括质量偏置装置170，其形成在上部布拉格反射器149上方，并且在压电层124相对的上部反射器相对的一侧上。然后形成塑料模塑填充件180，从而封装质量偏置装置170、声学布拉格反射器和压电谐振器。质量偏置装置用于防止或至少减小谐振器装置随着时间的频率漂移。在没有质量偏置装置170的情况下，由于质量在压电谐振器顶部上随着时间而积累(例如除气材料、颗粒等)，装置频率可随着时间而漂移。通过采用已知质量(质量偏置装置10)预加载谐振器，并利用在时间零处已经位于谐振器顶部上的该质量调整频率，将衰减因现场中的额外新的质量积累导致的任何漂移。因此，谐振器被设计用于假定质量偏置装置在原位的具体频率。在没有质量偏置装置的情况下，频率将不同(例如更高)。
在至少一些实施例中，质量偏置装置170沉积，同时形成接触点160和162，因此质量偏置装置170由与接触点160和162相同的材料形成。在接触点由铝铜(AlCu)形成的实施例中，质量偏置装置170由AlCu形成。质量偏置装置170可大约为1微米厚。
如上所述，装置100优选包括衬底102、声学布拉格反射器104、谐振器(包括在压电层124相对两侧上的电极120和128)以及质量偏置装置。
装置100也可包括温度受控特征。在图1的实施例中，也提供有源加热器层150。有源加热器层150优选包括钽铝合金薄膜或其它合适材料。层150可具有约1000的厚度。在该厚度处，加热器的薄层电阻大约是30欧姆/平方。加热器层中钽与铝的比率可以大约是50:50。
有源加热器层150集成到装置100中，并处于上部电极128的顶部上且围绕一些或全部上部电极128，并且因此一般在谐振器的顶部上并围绕一些或全部谐振器。经由触点(未示出)能够将电流提供给有源加热器层150。有源加热器层产生的热量通过提供给加热器层的电流量可控制-更高的电流水平使加热器层150生成更高的热量水平。这种加热器层提供一种整体加热(oven)受控的谐振器，其将装置100的温度升高到装置的最高环境温度规格以上。通过迫使温度达到已知和稳定水平，温度变化被最小化或消除，并且因此装置的频率的温度引起的变化被避免或至少减小。
图2示出根据各种实施例的制造例如温度受控集成压电谐振器装置100或具有所有介电布拉格反应器的其它类型基于压电的谐振器的方法200。方法200的步骤可以以示出的顺序执行或以不同的顺序执行。此外，两个或更多步骤可并行而不是顺序执行。
在202处，该方法包括在衬底(例如衬底102)上方沉积较低和较高声学阻抗的交替介电层。衬底可由硅(诸如单晶硅晶片)、GaAs、AlAs等形成。较低和较高声学阻抗层可由诸如上述材料的材料形成。
在布拉格反射器的各层形成之后，在204处，下部谐振器电极120在布拉格反射器上方形成。在一个示例中，选择用于下部谐振器电极的材料具有低的热弹性损耗，并且优选具有小于1000A的厚度，从而保持光滑的谐振器电极表面。上部电极可以使用诸如钼、钛、钨、金、铂、铝等的材料溅射沉积。
在206处，压电层接着沉积在下部电极上方。压电层可由诸如氮化铝、氧化锌、锆钛酸铅、石英、钛酸钡等的任何合适材料形成。使用产生低应力、采用c轴线取向的致密层的优化工艺、利用氮气，能够反应性溅射沉积氮化铝层。
然后沉积上部电极，如在图2的208处示出。上部电极也能够是钼的溅射沉积层。上部布拉格反射器149也可被包括。
加热器层沉积在压电谐振器上方，如在210处所示。加热器层可包括钽铝合金薄膜并且通过后续将薄膜图案化的半导体沉积/光刻/干蚀刻工艺形成。
在212处，质量偏置装置170和接触垫160、162被沉积，如上所解释的。最终，利用塑料模具填充件封装装置。
本领域的技术人员将理解，在所要求保护的本发明的范围内，可对所述实施例进行修改，并且许多其他实施例也是可能的。

Claims (8)

1.一种集成谐振器设备，其包括：
压电谐振器；
声学布拉格反射器，其邻近所述压电谐振器形成；和
质量偏置装置，其形成在与所述压电谐振器相对的所述压电谐振器的一侧上的布拉格反射器上方。
2.根据权利要求1所述的集成谐振器设备，其中所述质量偏置装置包括铝铜。
3.根据权利要求1所述的集成谐振器设备，进一步包括用于电气接触所述压电谐振器并由材料形成的多个电气接触垫，并且其中所述质量偏置装置由与所述接触垫相同的材料形成。
4.根据权利要求1所述的集成谐振器设备，进一步包括封装所述质量偏置装置、声学布拉格反射器和压电谐振器的塑料模具填充件。
5.根据权利要求1所述的集成谐振器设备，其中所述质量偏置装置约为1微米厚。
6.一种形成具有布拉格反射器的压电谐振器的方法，其包括：
在衬底上方沉积较低和较高声学阻抗材料的交替介电层；
在所述交替介电层上方沉积第一谐振器电极；
在所述第一谐振器电极上方沉积压电层；
在所述压电层上方沉积第二谐振器电极；
在所述谐振器上方沉积质量偏置装置；以及
利用塑料封装所述质量偏置装置、第一和第二电极、压电层，和交替介电层。
7.根据权利要求6所述的方法，进一步包括将较低和较高声学阻抗的第二组交替介电层沉积在所述第二谐振器电极和所述质量偏置装置之间。
8.根据权利要求6所述的方法，进一步包括当所述质量偏置装置被沉积时，沉积与所述质量偏置装置相同的材料的电气接触垫。
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