CN104313536A - 石英晶片多层离子溅射镀膜机 - Google Patents

石英晶片多层离子溅射镀膜机 Download PDF

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CN104313536A
CN104313536A CN201410615027.1A CN201410615027A CN104313536A CN 104313536 A CN104313536 A CN 104313536A CN 201410615027 A CN201410615027 A CN 201410615027A CN 104313536 A CN104313536 A CN 104313536A
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cavity
coating machine
ion sputtering
target
multilayer ion
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CN104313536B (zh
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胡国春
翁斌
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East crystal electronic Jinhua Co., Ltd.
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Dong Kang Jingrui (chengdu) Co Ltd Crystal
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/18Metallic material, boron or silicon on other inorganic substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3464Sputtering using more than one target

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明公开了一种石英晶片多层离子溅射镀膜机,它包括从左往右依次连接的第一腔体(1)、第二腔体(2)和第三腔体(3),所述的第一腔体(1)、第二腔体(2)和第三腔体(3)内均设置有电场发生器(4)和磁场发生器(5),所述的第一腔体(1)上方设置有铬靶(6),第二腔体(2)上方设置有铝靶(7),第三腔体(3)上方设置有金靶(8),所述的第一腔体(1)与第二腔体(2)连接处以及第二腔体(2)与第三腔体(3)的连接处均设置有一隔板(9),隔板(9)中间位置开设有通孔(10)。本发明的有益效果是:它具有成本低、镀膜效率高和易于制造的优点。

Description

石英晶片多层离子溅射镀膜机
技术领域
本发明涉及石英晶体谐振器,特别是一种石英晶片多层离子溅射镀膜机。
背景技术
石英晶体谐振器行业内电极材料大多使用贵重金属,如金,铂和银等,虽然晶体谐振器的老化性能优异,但高成本也成为了这类产品的劣势。随着晶体行业竞争日益激烈,降低制造成本成了业内的必然趋势。
采用多层薄膜电极的方法,使电极的主要成分为常用金属,另外通过多层膜厚度的合理分配,使其老化特性可以接近贵重金属电极。这种结构可以很大程度地降低制造成本而且性能与贵重金属电极产品相当。
发明内容
本发明的目的在于克服现有技术的缺点,提供一种成本低、镀膜效率高和易于制造的石英晶片多层离子溅射镀膜机。
本发明的目的通过以下技术方案来实现:石英晶片多层离子溅射镀膜机,它包括从左往右依次连接的第一腔体、第二腔体和第三腔体,所述的第一腔体、第二腔体和第三腔体内均设置有电场发生器和磁场发生器,所述的第一腔体上方设置有铬靶,第二腔体上方设置有铝靶,第三腔体上方设置有金靶,所述的第一腔体与第二腔体连接处以及第二腔体与第三腔体的连接处均设置有一隔板,隔板中间位置开设有通孔。
所述的铬靶位于第一腔体侧面的中央。
所述的铝靶位于第二腔体侧面的中央。
所述的金靶位于第三腔体侧面的中央。
本发明具有以下优点:本发明的镀膜机,将不同材质的薄膜按特定的顺序电镀形成电极,且多层薄膜在同一镀膜机中完成,增加了石英晶片镀膜效率,且使用的铬靶和铝靶,和贵重金属相比,其成本低、易于制造,同时,铬靶和铝靶还具有抗老化强的优点,因而降低石英晶体谐振器的制造成本。
附图说明
图1 为本发明的结构示意图
图中,1-第一腔体,2-第二腔体,3-第三腔体,4-电场发生器,5-磁场发生器,6-铬靶,7-铝靶,8-金靶,9-隔板,10-通孔。 
具体实施方式
下面结合附图对本发明做进一步的描述,本发明的保护范围不局限于以下所述:
如图1所示,石英晶片多层离子溅射镀膜机,它包括从左往右依次连接的第一腔体1、第二腔体2和第三腔体3,所述的第一腔体1、第二腔体2和第三腔体3内均设置有电场发生器4和磁场发生器5,所述的第一腔体1上方设置有铬靶6,第二腔体2上方设置有铝靶7,第三腔体3上方设置有金靶8,所述的第一腔体1与第二腔体2连接处以及第二腔体2与第三腔体3的连接处均设置有一隔板9,隔板9中间位置开设有通孔10。
在本实施例中,所述的铬靶6位于第一腔体1侧面的中央,铝靶7位于第二腔体2侧面的中央,金靶8位于第三腔体3侧面的中央,石英晶片从箭头的方向进入该镀膜机,电极材料在适当的电场以及磁场的作用下,形成离子层,此时晶片以不同的速率经过铬靶6、铝靶7和金靶8,完成镀膜。从而在石英晶片上形成不同厚度的铬膜、铝膜和金膜,此三层金属膜组成了谐振器的电极。 

Claims (4)

1.石英晶片多层离子溅射镀膜机,其特征在于:它包括从左往右依次连接的第一腔体(1)、第二腔体(2)和第三腔体(3),所述的第一腔体(1)、第二腔体(2)和第三腔体(3)内均设置有电场发生器(4)和磁场发生器(5),电场发生器(4)和磁场发生器(5)位于腔体两侧,所述的第一腔体(1)上方设置有铬靶(6),第二腔体(2)上方设置有铝靶(7),第三腔体(3)上方设置有金靶(8),所述的第一腔体(1)与第二腔体(2)连接处以及第二腔体(2)与第三腔体(3)的连接处均设置有一隔板(9),隔板(9)中间位置开设有通孔(10)。
2.根据权利要求1所述的石英晶片多层离子溅射镀膜机,其特征在于:所述的铬靶(6)位于第一腔体(1)侧面的中央。
3.根据权利要求1所述的石英晶片多层离子溅射镀膜机,其特征在于:所述的铝靶(7)位于第二腔体(2)侧面的中央。
4.根据权利要求1所述的石英晶片多层离子溅射镀膜机,其特征在于:所述的金靶(8)位于第三腔体(3)侧面的中央。
CN201410615027.1A 2014-11-05 2014-11-05 石英晶片多层离子溅射镀膜机 Active CN104313536B (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1220761A (zh) * 1997-03-31 1999-06-23 松下电器产业株式会社 光记录媒体及其制造方法
CN202595248U (zh) * 2012-05-28 2012-12-12 广州市番禺双石钛金厂 装饰镀膜领域用的磁控溅射与离子镀联用镀膜系统
CN203411606U (zh) * 2013-08-01 2014-01-29 合肥永信等离子技术有限公司 一种批量化类金刚石涂层镀膜设备

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1220761A (zh) * 1997-03-31 1999-06-23 松下电器产业株式会社 光记录媒体及其制造方法
CN202595248U (zh) * 2012-05-28 2012-12-12 广州市番禺双石钛金厂 装饰镀膜领域用的磁控溅射与离子镀联用镀膜系统
CN203411606U (zh) * 2013-08-01 2014-01-29 合肥永信等离子技术有限公司 一种批量化类金刚石涂层镀膜设备

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