CN104300917A - 900MHz-band single-ended structural low-noise amplifier - Google Patents
900MHz-band single-ended structural low-noise amplifier Download PDFInfo
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- CN104300917A CN104300917A CN201410538961.8A CN201410538961A CN104300917A CN 104300917 A CN104300917 A CN 104300917A CN 201410538961 A CN201410538961 A CN 201410538961A CN 104300917 A CN104300917 A CN 104300917A
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Abstract
The invention relates to a 900MHz-band single-ended structural low-noise amplifier which comprises an amplifying tube, an input matching circuit and an output matching circuit. A grid electrode of the amplifying tube is connected to the input matching circuit; all source electrodes of the amplifying tube are respectively in series connection with a microstrip inductor to be grounded; a drain electrode of the amplifying tube is in series connection with a resistor which is further connected with the output matching circuit; a rear end of the output matching circuit is connected with a low-cost isolator; and a direct-current bias circuit of the amplifying tube is connected between the input matching circuit and the output matching circuit. Since the isolator used for modifying echo matching is set at the output end of the amplifier skillfully, requirements for performance of the amplifier, especially the insertion loss thereof can be lowered; the low-cost isolator can meet design requirements well so that circuit structuring cost is lowered. In addition, the minimum noise matching and the optimal echo loss matching can be achieved simultaneously even no balancing structures are used or no low-loss high-cost ferrite isolators are inserted to the front end of the low-noise amplifier.
Description
Technical field
The present invention relates to a kind of 900MHz frequency range single-ended configuration amplifier circuit in low noise, belong to microwave telecommunication devices technical field.
Background technology
Low noise amplifier is an active device, be widely used in various types of communication equipment, be positioned at receiver foremost, its major function is for late-class circuit provides sufficiently high gain under the condition overcoming noise, namely, while gain is provided, noise is reduced as much as possible.Therefore not only require that it has good mating with front stage circuit in actual applications, namely good input and output echo coupling, also must have very little noise factor simultaneously.And good input and output echo coupling is mated normally conflicting with minimal noise, be namely difficult to reach simultaneously.In order to solve this contradiction, widely used method for designing has two kinds, and one adopts balanced structure, and another kind inserts a low-loss isolator at input.But these two kinds of methods all can cause higher cost and larger circuit size.
Summary of the invention
The object of the invention is the deficiency overcoming prior art existence, a kind of 900MHz frequency range single-ended configuration low noise amplifier is provided.
Object of the present invention is achieved through the following technical solutions:
900MHz frequency range single-ended configuration low noise amplifier, feature is: comprise amplifier tube, input matching circuit and output matching circuit, the grid of amplifier tube is connected to input matching circuit, all source electrodes of amplifier tube connect a microstrip line inductance respectively to ground, drain series resistance of amplifier tube, resistance is connected to output matching circuit, and the rear end of output matching circuit connects a low cost isolator, is connected the DC bias circuit of amplifier tube between input matching circuit with output matching circuit.
Further, above-mentioned 900MHz frequency range single-ended configuration low noise amplifier, described input matching circuit is lamped element LC match circuit.
Further, above-mentioned 900MHz frequency range single-ended configuration low noise amplifier, described output matching circuit is lamped element LC match circuit.
Again further, above-mentioned 900MHz frequency range single-ended configuration low noise amplifier, the isolator of described low cost isolator to be model be CES40897MDCB000.
Substantive distinguishing features and the progress of technical solution of the present invention are mainly reflected in:
Dexterously the isolator being used for improving echo coupling is arranged at the output of amplifier, the requirement to its performance can be reduced, especially the requirement of insertion loss; Use the isolator of low cost to meet design requirement well, thus reduce circuit structure cost.Without the need to balance structure or insert a low-loss high cost ferrite isolator in low noise amplifier front end, just can obtain minimal noise coupling and best return loss is mated simultaneously.Its circuit structure is simple, and component number is few, stable performance, and cost is low, is applicable to large-scale production.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, technical solution of the present invention is described further:
Fig. 1: organigram of the present invention.
Embodiment
As shown in Figure 1,900MHz frequency range single-ended configuration low noise amplifier, comprise amplifier tube 2, input matching circuit 1 and output matching circuit 5, the grid of amplifier tube 2 is connected to input matching circuit 1, all source electrodes of amplifier tube 2 connect a microstrip line inductance 4 respectively to ground, drain series resistance 3 of amplifier tube 2, resistance 3 connects output matching circuit 5, the rear end of output matching circuit 5 connects a low cost isolator 7, is connected with the DC bias circuit 6 of amplifier tube between input matching circuit 1 and output matching circuit 5.Input matching circuit 1 provides input A, and output matching circuit 5 provides output B.
Input matching circuit 1 is lamped element LC match circuit, and circuit form is high pass L-type.Be wherein the chip inductor of a 12nH near the parallel connection part of amplifier tube, be also the part of DC bias circuit simultaneously; Part in series is the chip ceramic capacitor of a 6.8pF, and the encapsulation of inductance and electric capacity is 0603.
Output matching circuit 5 is lamped element LC match circuit, and circuit form is high pass L-type.Be wherein the chip inductor of a 18nH near the parallel connection part of amplifier tube, be also the part of DC bias circuit simultaneously; Part in series is the chip ceramic capacitor of a 3.3pF, and the encapsulation of inductance and electric capacity is 0603.
The isolator of low cost isolator 7 to be models be CES40897MDCB000.
First, when designing input matching circuit 1, in order to make noise factor minimum, source reflection coefficient Γ is chosen
sequal the best source reflection coefficient of amplifier tube 2, namely obtain the source reflection coefficient Γ of minimal noise performance
oPT.
Secondly, in order to obtain best echo coupling at input simultaneously, input reflection coefficient Γ is made
iNequal Γ
sconjugate, i.e. Γ
oPTconjugate, we are referred to as Γ
oPT *.From Two-port netwerk linear-network theory knowledge, Γ
iNthe scattering parameter S depending on again amplifier tube itself and the load reflection coefficient Γ connect
l, between there is following relation:
From above formula, once the scattering parameter S of amplifier tube 2 determines, Γ
iNonly depend on Γ
las long as therefore choose suitable Γ
l, make Γ
iN=Γ
oPT *set up, just can obtain best echo coupling at input simultaneously.But sometimes not too easily can find suitable Γ
l, at this moment just need to make Γ by following two kinds of technological means
iN=Γ
oPT *the Γ set up
lmore easily find: a kind of is connect an inductance 4 (in side circuit, conventional a bit of high impedance microstrip line carrys out alternative inductor) to ground at the source electrode (or emitter) of amplifier tube 2; Another kind forms resistive degeneration at the drain electrode (or collector electrode) of amplifier tube 2 resistance 3 of connecting.These two kinds of technological means also have the effect improving circuit stability concurrently, thus compensate for this shortcoming of single-ended structure low noise amplifier poor stability.But it should be noted that inductance value and resistance value all can not be got too large, in order to avoid gain is too low.
Then, by the Γ that preceding method finds
lalthough conjugate impedance match can be obtained at input, due to itself and Γ
outconjugate normally unequal, that is can not obtain good echo coupling at the output of amplifier tube 2.In order to also can obtain good echo coupling at output, a low cost isolator 7 is inserted after output matching circuit 5, utilize the isolation effect of isolator, the echo of amplifier tube output is made not to be passed to output, now the echo coupling of amplifier out only depends on the echo coupling of isolator itself, even if the output echo coupling of isolator itself is bad, also can be improved by increasing some match circuits again at its output again.Because now added isolator is positioned at the output of amplifier, its Insertion Loss size impact on noiseproof feature is very little, therefore the isolator of low cost need be adopted to meet design requirement.
During the input matching circuit 1 of Design enlargement pipe 2, while the coupling employing minimal noise coupling of input, input is made to reach conjugate impedance match by adjustment output matching circuit, the echo coupling that the echo coupling of namely sacrificing output makes input reach good, and then the isolator inserting a low cost after output matching circuit 5 retrieves its echo coupling of sacrificing.
The isolator being used for improving echo coupling is arranged at the output of amplifier by the present invention dexterously, so the requirement to its performance can be reduced, and the especially requirement of insertion loss.Therefore use the isolator of low cost just can meet design requirement well, thus reduce circuit structure cost.
In sum, without the need to balance structure or insert a low-loss high cost ferrite isolator in low noise amplifier front end, just can obtain minimal noise coupling and best return loss is mated simultaneously.Its circuit structure is simple, and component number is few, stable performance, and cost is low, is applicable to large-scale production.
It is emphasized that: be only preferred embodiment of the present invention above, not any pro forma restriction is done to the present invention, every above embodiment is done according to technical spirit of the present invention any simple modification, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (4)
1.900MHz frequency range single-ended configuration low noise amplifier, it is characterized in that: comprise amplifier tube, input matching circuit and output matching circuit, the grid of amplifier tube is connected to input matching circuit, all source electrodes of amplifier tube connect a microstrip line inductance respectively to ground, drain series resistance of amplifier tube, resistance is connected to output matching circuit, and the rear end of output matching circuit connects a low cost isolator, between input matching circuit and output matching circuit, be connected with DC bias circuit.
2. 900MHz frequency range single-ended configuration low noise amplifier according to claim 1, is characterized in that: described input matching circuit is lamped element LC match circuit.
3. 900MHz frequency range single-ended configuration low noise amplifier according to claim 1, is characterized in that: described output matching circuit is lamped element LC match circuit.
4. 900MHz frequency range single-ended configuration low noise amplifier according to claim 1, is characterized in that: the isolator of described low cost isolator to be model be CES40897MDCB000.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410538961.8A CN104300917A (en) | 2014-10-13 | 2014-10-13 | 900MHz-band single-ended structural low-noise amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410538961.8A CN104300917A (en) | 2014-10-13 | 2014-10-13 | 900MHz-band single-ended structural low-noise amplifier |
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| Publication Number | Publication Date |
|---|---|
| CN104300917A true CN104300917A (en) | 2015-01-21 |
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| CN201410538961.8A Pending CN104300917A (en) | 2014-10-13 | 2014-10-13 | 900MHz-band single-ended structural low-noise amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109274342A (en) * | 2018-08-31 | 2019-01-25 | 东南大学 | Power synthesis amplifier suitable for millimeter-wave communication system power application |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1739847A2 (en) * | 2005-07-01 | 2007-01-03 | Samsung Electronics Co., Ltd. | Transmit-receive antenna switch in a TDD wireless communication system |
| CN201541238U (en) * | 2009-09-11 | 2010-08-04 | 清华大学 | Preamplifier of magnetic resonance imaging MRI system capable of reducing low-frequency noise |
| CN203466780U (en) * | 2013-08-13 | 2014-03-05 | 安徽天兵电子科技有限公司 | Low-noise amplifier |
| CN204103866U (en) * | 2014-10-13 | 2015-01-14 | 世达普(苏州)通信设备有限公司 | 900MHz frequency range single-ended configuration low noise amplifier |
-
2014
- 2014-10-13 CN CN201410538961.8A patent/CN104300917A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1739847A2 (en) * | 2005-07-01 | 2007-01-03 | Samsung Electronics Co., Ltd. | Transmit-receive antenna switch in a TDD wireless communication system |
| CN201541238U (en) * | 2009-09-11 | 2010-08-04 | 清华大学 | Preamplifier of magnetic resonance imaging MRI system capable of reducing low-frequency noise |
| CN203466780U (en) * | 2013-08-13 | 2014-03-05 | 安徽天兵电子科技有限公司 | Low-noise amplifier |
| CN204103866U (en) * | 2014-10-13 | 2015-01-14 | 世达普(苏州)通信设备有限公司 | 900MHz frequency range single-ended configuration low noise amplifier |
Non-Patent Citations (1)
| Title |
|---|
| 杨斌等: "3.8cm低噪声常温场效应晶体管放大器", 《低温与超导》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109274342A (en) * | 2018-08-31 | 2019-01-25 | 东南大学 | Power synthesis amplifier suitable for millimeter-wave communication system power application |
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Application publication date: 20150121 |