CN104300057A - 一种高亮度GaN发光二极管器件的制作方法 - Google Patents
一种高亮度GaN发光二极管器件的制作方法 Download PDFInfo
- Publication number
- CN104300057A CN104300057A CN201410535523.6A CN201410535523A CN104300057A CN 104300057 A CN104300057 A CN 104300057A CN 201410535523 A CN201410535523 A CN 201410535523A CN 104300057 A CN104300057 A CN 104300057A
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- China
- Prior art keywords
- layer
- photoresist mask
- gallium nitride
- type gallium
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 36
- 238000001259 photo etching Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 13
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 238000004070 electrodeposition Methods 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims abstract description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 30
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- 239000010408 film Substances 0.000 claims description 13
- 229910004541 SiN Inorganic materials 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 abstract 2
- 238000000407 epitaxy Methods 0.000 abstract 2
- 238000007740 vapor deposition Methods 0.000 abstract 2
- 238000000605 extraction Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410535523.6A CN104300057A (zh) | 2014-10-11 | 2014-10-11 | 一种高亮度GaN发光二极管器件的制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410535523.6A CN104300057A (zh) | 2014-10-11 | 2014-10-11 | 一种高亮度GaN发光二极管器件的制作方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104300057A true CN104300057A (zh) | 2015-01-21 |
Family
ID=52319713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410535523.6A Pending CN104300057A (zh) | 2014-10-11 | 2014-10-11 | 一种高亮度GaN发光二极管器件的制作方法 |
Country Status (1)
Country | Link |
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CN (1) | CN104300057A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107026221A (zh) * | 2016-01-29 | 2017-08-08 | 映瑞光电科技(上海)有限公司 | 具有高亮度的led芯片及其制备方法 |
CN107768491A (zh) * | 2017-10-31 | 2018-03-06 | 江苏新广联半导体有限公司 | 用于手环的MicroLED显示模块制作方法 |
CN111487845A (zh) * | 2019-01-29 | 2020-08-04 | 山东浪潮华光光电子股份有限公司 | 一种可以直接剥离的led管芯电极掩模图形的制作方法 |
-
2014
- 2014-10-11 CN CN201410535523.6A patent/CN104300057A/zh active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107026221A (zh) * | 2016-01-29 | 2017-08-08 | 映瑞光电科技(上海)有限公司 | 具有高亮度的led芯片及其制备方法 |
CN107768491A (zh) * | 2017-10-31 | 2018-03-06 | 江苏新广联半导体有限公司 | 用于手环的MicroLED显示模块制作方法 |
CN107768491B (zh) * | 2017-10-31 | 2019-11-22 | 江苏新广联半导体有限公司 | 用于手环的MicroLED显示模块制作方法 |
CN111487845A (zh) * | 2019-01-29 | 2020-08-04 | 山东浪潮华光光电子股份有限公司 | 一种可以直接剥离的led管芯电极掩模图形的制作方法 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160627 Address after: 225500 Taizhou science and Technology Industrial Park, Jiangyan District, Jiangsu (east side of the South) Applicant after: BEIJING UNIVERSITY OF TECHNOLOGY Address before: 100124 Chaoyang District, Beijing Ping Park, No. 100 Applicant before: Beijing University of Technology |
|
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 225500 Taizhou science and Technology Industrial Park, Jiangyan District, Jiangsu (east side of the South) Applicant after: China Semiconductor Technology Co., Ltd. Address before: 225500 Taizhou science and Technology Industrial Park, Jiangyan District, Jiangsu (east side of the South) Applicant before: BEIJING UNIVERSITY OF TECHNOLOGY |
|
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150121 |