CN104282338A - Method and device for electrifying nonvolatile memory - Google Patents
Method and device for electrifying nonvolatile memory Download PDFInfo
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- CN104282338A CN104282338A CN201310291728.XA CN201310291728A CN104282338A CN 104282338 A CN104282338 A CN 104282338A CN 201310291728 A CN201310291728 A CN 201310291728A CN 104282338 A CN104282338 A CN 104282338A
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Abstract
The invention provides a method and a device for electrifying a nonvolatile memory. The nonvolatile memory comprises a storage unit. The method comprises the following steps: applying voltage to the nonvolatile memory until the voltage is stabilized to a preset working voltage; verifying the excessive erasing of the nonvolatile memory, and judging whether an excessively-erased storage unit exists or not; restoring the excessively-erased storage unit if the excessively-erased storage unit exists, then returning to the step for verifying the excessive erasing of the nonvolatile memory and judging whether the excessively-erased storage unit exists; and ending the electrification of the nonvolatile memory if no excessively-erased storage unit exists. The method and the device are used for eliminating leak current generated by the abnormal power failure of the memory, so that the memory can work normally after the abnormal power failure, and the damage of the memory caused by the abnormal power failure can be eliminated.
Description
Technical field
The present invention relates to semiconductor memory technologies field, particularly relate to method and device that a kind of nonvolatile memory powers on.
Background technology
In the use procedure of storer, in the process of carrying out erase operation, possibly because erase operation abnormal ending, larger leakage current is there is in the storage unit of storer, so on a memory after electricity, the region that abnormal operation occurs may be caused normally to work due to leakage current.
Therefore, one of problem that those skilled in the art are in the urgent need to address is, a kind of method that nonvolatile memory powers on and device are proposed, in order to eliminate the leakage current because storer produces because of powered-off fault, storer normally can be worked after powered-off fault, eliminate the infringement that powered-off fault brings to storer.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of method and device that nonvolatile memory powers on, in order to eliminate the leakage current because storer produces because of powered-off fault, storer normally can be worked after powered-off fault, eliminate the infringement that powered-off fault brings to storer.
In order to solve the problem, the invention discloses a kind of method that nonvolatile memory powers on, described nonvolatile memory comprises storage unit, and described method comprises:
Voltage is applied until be stabilized in default operating voltage to described nonvolatile memory;
Erasing verification was carried out to described nonvolatile memory, judged whether the storage unit that there is erasing;
If there is the storage unit of erasing, then repaired the described storage unit crossing erasing, and then returned and described erasing verification was carried out to nonvolatile memory, judge whether to exist the step of the storage unit of wiping;
If there is not the storage unit of erasing, then terminated powering on of described nonvolatile memory.
Preferably, described, voltage is applied until before being stabilized in the step of default operating voltage, also comprise to nonvolatile memory:
Exclusive signal is applied to described nonvolatile memory;
And,
Before the step powered on of the described nonvolatile memory of described end, also comprise:
Discharge described exclusive signal.
Preferably, described step of repairing the storage unit of erasing is:
Write operation is carried out to the described storage unit crossing erasing.
Preferably, described, voltage is applied until after being stabilized in the step of default operating voltage, also comprise to nonvolatile memory:
Read the internal configuration information that described nonvolatile memory is executed.
Preferably, after the step of the internal configuration information executed at described reading non-volatile storage, also comprise:
If receive the enable signal that nonvolatile memory sends, then perform and erasing verification was carried out to described nonvolatile memory, judge whether the step of the storage unit that there is erasing;
If do not receive the enable signal that nonvolatile memory sends, then return and voltage is applied until be stabilized in the step of default operating voltage to described nonvolatile memory.
Preferably, describedly carried out erasing verification to nonvolatile memory, the step judging whether to exist the storage unit of wiping comprises:
Detect described storage unit and whether there is leakage current;
If so, the storage unit that there is erasing is then judged to be;
If not, then the storage unit that there is not erasing is judged to be.
The embodiment of the invention also discloses the device that a kind of nonvolatile memory powers on, described nonvolatile memory comprises storage unit, and described device comprises:
Voltage applies module, for applying voltage until be stabilized in default operating voltage to described nonvolatile memory;
Cross erasing correction verification module, for carrying out erasing verification to described nonvolatile memory, judge whether the storage unit that there is erasing; If there is the storage unit of erasing, then call reparation module, if there is not the storage unit of erasing, then call end module;
Repairing module, for repairing the described storage unit crossing erasing, then returning erasing correction verification module;
Terminate module, for terminating powering on of described nonvolatile memory.
Preferably, described device also comprises:
Exclusive signal-applying module, for applying exclusive signal to described nonvolatile memory;
Exclusive signal release module, for discharging described exclusive signal.
Preferably, described reparation module comprises:
Write operation submodule, for carrying out write operation to the described storage unit crossing erasing.
Preferably, described device also comprises:
Internal configuration information read module, for reading the internal configuration information that described nonvolatile memory is executed.
Preferably, described device also comprises:
Execution module, if for receiving the enable signal that nonvolatile memory sends, then called erasing correction verification module;
Return module, if for not receiving the enable signal that nonvolatile memory sends, then return voltage applies module.
Preferably, described erasing correction verification module of crossing comprises:
Whether detection sub-module, exist leakage current for detecting described storage unit; If so, then call the first determination module, if not, then call the second determination module;
First determination module, for being judged to be the storage unit that there is erasing;
Second determination module, for being judged to be the storage unit that there is not erasing.
Compared with prior art, the present invention includes following advantage:
The embodiment of the present invention is inserted leakage current and is repaired flow process in nonvolatile memory power up, utilize and wiping the leakage current reparation flow process used, eliminate the leakage current produced because of nonvolatile memory powered-off fault, owing to eliminating the leakage current of storage unit in nonvolatile memory, nonvolatile memory normally can be worked after powered-off fault, to this eliminate the infringement that powered-off fault brings to nonvolatile memory.
Accompanying drawing explanation
Fig. 1 is the flow chart of steps that a kind of FLASH memory powers on;
Fig. 2 is a kind of NOR FLASH memory cell structure schematic diagram;
Fig. 3 is a kind of FLASH memory cell array schematic diagram;
Fig. 4 is a kind of FLASH memory erasing process flow diagram;
Fig. 5 is the flow chart of steps of the embodiment of the method 1 that a kind of nonvolatile memory of the present invention powers on;
Fig. 6 is the flow chart of steps of the embodiment of the method 2 that a kind of nonvolatile memory of the present invention powers on;
Fig. 7 is that a kind of nonvolatile memory of the present invention powers on flow chart of steps;
Fig. 8 is the structured flowchart of the device embodiment that a kind of nonvolatile memory of the present invention powers on.Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, and below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
In order to make those skilled in the art understand the embodiment of the present invention further, below memory erase operation and power up are simply illustrated.
After storer performs erase operation, cannot normally work after causing storer to power on owing to producing leakage current in erase process.For the process that storer powers on, the flow chart of steps that can power on reference to a kind of FLASH memory shown in Fig. 1, specifically can comprise the steps:
1, FLASH memory is in original state;
2, exclusive signal is applied to FLASH memory, starts power supply; Judge whether to power on successfully; If so, then perform step 3, if not, then return step 1;
3, FLASH memory reads the internal configuration information of normal work,
4, judge whether normally to read internal configuration information, if so, then perform step 5, if not, then perform step 1;
5, after the exclusive signal powered on is released, FLASH memory completes and works on power, and can carry out the operations such as normal read-write.
In specific implementation, for NOR FLASH memory, NOR FLASH memory normally adopts tunnel effect (Fowler-Nordheim tunneling) mechanism to carry out erase operation, with reference to a kind of NOR FLASH memory cell structure schematic diagram shown in Fig. 2, this storage unit comprises p well region (ip-well) and n-well region (n-well), and there is source (S), drain terminal (D), grid end (G).The grid termination of storage unit enters grid terminal voltage (VG), source access drain terminal voltage (VD), source access source voltage terminal (VG), p well region access p trap voltage (VnW), n-well region access n trap voltage (ViP).When to when carrying out erase operation, NOR FLASH memory is applied to the parameter list of a kind of voltage as shown in table 1:
| VG | VS | VD | VnW | ViP |
| -8V | 7V | Floating | Floating | 7V |
The grid end of storage unit applies the grid terminal voltage VG of negative high voltage, source and p well region (ip_well) add source voltage terminal VS and the P well region voltage ViP of positive high voltage, thus form a highfield, electronics on grid end is left from grid end, and then completing erase operation, erase process is generally the operation of ms level.
With reference to a kind of FLASH memory cell array schematic diagram shown in Fig. 3, the p well region of whole memory cell array is connected with source, and the grid end of often going is connected.The drain terminal of the storage unit of same column is connected on same bit line BL, and the grid end of the storage unit of colleague is connected on same grid terminal voltage VG, and p well region is connected to p well region voltage ViP.Due to each storage unit connected, to carry out time of erase operation different, and along with the change of time, the erasing time of storage unit likely increases, and erasing is generally carry out erase operation to a few line storage unit simultaneously.
With reference to a kind of FLASH memory erasing process flow diagram shown in Fig. 4, specifically can comprise the steps:
1, FLASH memory is in original state;
2, judge whether to carry out erase operation, if so, then perform step 2, if not, then return step 1;
3, erase operation is carried out to FLASH memory;
4, leakage current test is carried out to storage unit, judges whether to there is leakage current, if so, then perform step 5, if not, then perform step 6;
5, leakage current reparation is carried out for the storage unit that there is leakage current;
6, leakage current test is carried out to storage unit, judges whether to be completed erase operation, if so, then perform step 7, if not, then perform step 3;
7, erase operation terminates.
In specific implementation, when carrying out erase operation to storage unit, first judge whether to need to carry out erase operation to memory cell array, just erase operation is carried out to the storage unit of specified arrays if necessary and (namely on grid end, add negative high voltage, source and p well region add positive high voltage), then judging whether there is leakage current in memory cell array, if there is leakage current, prove that memory cell array portion unit crosses erasing, now needing to carry out reparation operation to crossing erase unit; If there is not leakage current, judge whether memory cell array all completes erase operation, if do not complete erase operation, repeat aforesaid operations.Hundreds of (microsecond) ms to a few s(second is generally needed) owing to completing an erase operation, if there is power down suddenly in the process that FLASH memory is performing erase operation, and carry out the region of erase operation because execution erase operation creates leakage current, FLASH storage unit will be caused to misread.Such as, suddenly there is power down in the process performing erase operation, suppose that second storage unit (cell1) of the second row in Fig. 3 in FLASH storage unit permutation produces leakage current, leakage current value is 15uA, second storage unit (cell0) storing value of the first row is 0, and leakage current value is 0uA.When reading cell0, VG0=5V, VG1=0V, the leakage current value on bit line BL1 is 15uA, and the storage information due to FLASH storage unit is by judging that the current value of storage unit carrys out work, and the leakage current that storage unit exists causes the information read to be made mistakes.
So re-power the FLASH memory of powered-off fault during execution erase operation, but erase area creates leakage current because of erase operation and is not repaired before, and so FLASH memory just cannot normally work.
In order to solve the problem, one of core idea of the embodiment of the present invention is, in nonvolatile memory power up, insert leakage current repair flow process, utilize and wiping the leakage current reparation flow process used, eliminate the leakage current produced because of nonvolatile memory powered-off fault, owing to eliminating the leakage current of storage unit in nonvolatile memory, nonvolatile memory normally can be worked after powered-off fault, to this eliminate the infringement that powered-off fault brings to nonvolatile memory.
With reference to Fig. 5, show the flow chart of steps of the embodiment of the method 1 that a kind of nonvolatile memory of the present invention powers on, can comprise storage unit in described nonvolatile memory, described method can comprise the steps:
Step 101, applies voltage until be stabilized in default operating voltage to described nonvolatile memory;
In specific implementation, powering on for nonvolatile memory, need start power supply to nonvolatile memory, make its voltage reach operational voltage value, and keeps stable.
Step 102, carried out erasing verification to described nonvolatile memory, judged whether the storage unit that there is erasing; If there is the storage unit of erasing, then perform step 103, if there is not the storage unit of erasing, then perform step 104;
After performing erase operation to nonvolatile memory, there is the storage unit of erasing possibly, the storage unit crossing erasing can cause the error in operation such as read-write, therefore needs to detect the storage unit appearing erasing, and normal condition is got back in reparation.
In one preferred embodiment of the invention, described step 102 can comprise:
Sub-step S11, detects described storage unit and whether there is leakage current; If so, then perform sub-step S12, if not, then perform sub-step S13;
Sub-step S12, is judged to be the storage unit that there is erasing;
Sub-step S13, is judged to be the storage unit that there is not erasing.
In specific implementation, verification is wiped to the mistake of nonvolatile memory, need check whether storage unit exists electric current, if exist, be then illustrated as the storage unit of erasing, and needed to repair flow process accordingly, if do not exist, be then illustrated as the storage unit of non-over erasing, do not need to repair.
Step 103, repairs the described storage unit crossing erasing, then returns described step 102;
In one preferred embodiment of the invention, described step of repairing the storage unit of erasing can be:
Write operation is carried out to the described storage unit crossing erasing.
Nonvolatile memory is crossed to the storage unit of erasing, need to carry out write operation, to remove the leakage current of existence.
Step 104, terminates powering on of described nonvolatile memory.
After completing the reparation to the storage unit crossing erasing, or the storage unit that there is not erasing detected, then terminate the power up of this nonvolatile memory.
With reference to Fig. 6, show the flow chart of steps of the embodiment of the method 2 that a kind of nonvolatile memory of the present invention powers on, can comprise storage unit in described nonvolatile memory, described method can comprise the steps:
Step 201, applies exclusive signal to described nonvolatile memory;
In specific implementation, before can powering on to nonvolatile memory, exclusive signal is applied to nonvolatile memory, other operations can not be performed before completing power up, to ensure the smooth execution of power up.
Step 202, applies voltage until be stabilized in default operating voltage to described nonvolatile memory;
Step 203, reads the internal configuration information that described nonvolatile memory is executed, and judges whether to receive enable signal; If receive enable signal, then perform step 204, if do not receive enable signal, then return step 202,
When nonvolatile memory is stabilized in default operating voltage, the internal configuration information of reading non-volatile storage, wherein, internal configuration information can comprise the configuration informations such as such as write-protect.If correctly read internal configuration information, nonvolatile memory sends enable signal, has notified the reading process of internal configuration information, can continue to perform other steps; If mistake reads internal configuration information, nonvolatile memory does not send enable signal, then need again apply voltage to nonvolatile memory and be again stabilized in default operating voltage.
Step 204, carried out erasing verification to described nonvolatile memory, judged whether the storage unit that there is erasing; If there is the storage unit of erasing, then perform step 205, if there is not the storage unit of erasing, then perform step 206;
Step 205, repairs the described storage unit crossing erasing, then returns step 204;
Step 206, discharges described exclusive signal;
After completing the reparation to the storage unit crossing erasing, or the storage unit that there is not erasing detected, then the exclusive signal of release.
Step 207, terminates powering on of described nonvolatile memory.
In order to make those skilled in the art understand the embodiment of the present invention further, be described below by way of a concrete power up.
To power on flow chart of steps with reference to a kind of nonvolatile memory of the present invention shown in Fig. 7, specifically can comprise the steps:
Step 1, nonvolatile memory is in original state, and before powering on, applies exclusive signal;
Step 2, starts power supply to nonvolatile memory, if reach operating voltage and keep stable, then perform step 3, if can not reach operating voltage, and voltage can not keep stable, then return step 1;
Step 3, reads normal internal configuration information;
Step 4, judges whether to receive the enable signal that nonvolatile memory sends, and if so, then performs step 5, if not, then performs step 1;
Step 5, judges whether nonvolatile memory existed eraseable memory unit; If so, then perform step 6, if not, then perform step 7;
Step 6, repaired the leakage current of the storage unit of erasing;
Step 7, the exclusive signal of release, power on end.
It should be noted that, for embodiment of the method, in order to simple description, therefore it is all expressed as a series of combination of actions, but those skilled in the art should know, the application is not by the restriction of described sequence of movement, because according to the application, some step can adopt other orders or carry out simultaneously.Secondly, those skilled in the art also should know, the embodiment described in instructions all belongs to preferred embodiment, and involved action might not be that the application is necessary.
With reference to Fig. 8, show the structured flowchart of the device embodiment that a kind of nonvolatile memory of the present invention powers on, can comprise storage unit in described nonvolatile memory, described device can comprise as lower module:
Voltage applies module 301, for applying voltage until be stabilized in default operating voltage to described nonvolatile memory;
In one preferred embodiment of the invention, described device can also comprise:
Execution module, if for receiving the enable signal that nonvolatile memory sends, then called erasing correction verification module 302;
Return module, if for not receiving the enable signal that nonvolatile memory sends, then return voltage applies module 301.
Cross erasing correction verification module 302, for carrying out erasing verification to described nonvolatile memory, judge whether the storage unit that there is erasing; If there is the storage unit of erasing, then called and repaired module 303, if there is not the storage unit of erasing, then called end module;
In one preferred embodiment of the invention, described erasing correction verification module 302 of crossing can comprise:
Whether detection sub-module, exist electric current for detecting described storage unit; If so, then call the first determination module, if not, then call the second determination module;
First decision sub-module, for being judged to be the storage unit that there is erasing;
Second decision sub-module, for being judged to be the storage unit that there is not erasing.
Repairing module 303, for repairing the described storage unit crossing erasing, then returning erasing correction verification module 302;
In one preferred embodiment of the invention, described reparation module 303 can comprise:
Write operation submodule, for carrying out write operation to the described storage unit crossing erasing.
Terminate module 304, for terminating powering on of described nonvolatile memory.
In one preferred embodiment of the invention, described device can also comprise:
Exclusive signal-applying module, for applying exclusive signal to described nonvolatile memory;
Exclusive signal release module, for discharging described exclusive signal.
In one preferred embodiment of the invention, described device can also comprise:
Internal configuration information read module, for reading the internal configuration information that described nonvolatile memory is executed.
For device embodiment, due to itself and embodiment of the method basic simlarity, so description is fairly simple, relevant part illustrates see the part of embodiment of the method.
Each embodiment in this instructions all adopts the mode of going forward one by one to describe, and what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar part mutually see.
Those skilled in the art should understand, the embodiment of the application can be provided as method, device or computer program.Therefore, the application can adopt the form of complete hardware embodiment, completely software implementation or the embodiment in conjunction with software and hardware aspect.And the application can adopt in one or more form wherein including the upper computer program implemented of computer-usable storage medium (including but not limited to magnetic disk memory, CD-ROM, optical memory etc.) of computer usable program code.
The application describes with reference to according to the process flow diagram of the method for the embodiment of the present application, equipment (system) and computer program and/or block scheme.Should understand can by the combination of the flow process in each flow process in computer program instructions realization flow figure and/or block scheme and/or square frame and process flow diagram and/or block scheme and/or square frame.These computer program instructions can being provided to the processor of multi-purpose computer, special purpose computer, Embedded Processor or other programmable data processing device to produce a machine, making the instruction performed by the processor of computing machine or other programmable data processing device produce device for realizing the function of specifying in process flow diagram flow process or multiple flow process and/or block scheme square frame or multiple square frame.
These computer program instructions also can be stored in can in the computer-readable memory that works in a specific way of vectoring computer or other programmable data processing device, the instruction making to be stored in this computer-readable memory produces the manufacture comprising command device, and this command device realizes the function of specifying in process flow diagram flow process or multiple flow process and/or block scheme square frame or multiple square frame.
These computer program instructions also can be loaded in computing machine or other programmable data processing device, make on computing machine or other programmable devices, to perform sequence of operations step to produce computer implemented process, thus the instruction performed on computing machine or other programmable devices is provided for the step realizing the function of specifying in process flow diagram flow process or multiple flow process and/or block scheme square frame or multiple square frame.
Although described the preferred embodiment of the application, those skilled in the art once obtain the basic creative concept of cicada, then can make other change and amendment to these embodiments.So claims are intended to be interpreted as comprising preferred embodiment and falling into all changes and the amendment of the application's scope.
Finally, also it should be noted that, in this article, the such as relational terms of first and second grades and so on is only used for an entity or operation to separate with another entity or operational zone, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.
The method above a kind of nonvolatile memory provided by the present invention powered on and device, be described in detail, apply specific case herein to set forth principle of the present invention and embodiment, the explanation of above embodiment just understands method of the present invention and core concept thereof for helping; Meanwhile, for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (12)
1. the method that powers on of nonvolatile memory, it is characterized in that, described nonvolatile memory comprises storage unit, and described method comprises:
Voltage is applied until be stabilized in default operating voltage to described nonvolatile memory;
Erasing verification was carried out to described nonvolatile memory, judged whether the storage unit that there is erasing;
If there is the storage unit of erasing, then repaired the described storage unit crossing erasing, and then returned and described erasing verification was carried out to nonvolatile memory, judge whether to exist the step of the storage unit of wiping;
If there is not the storage unit of erasing, then terminated powering on of described nonvolatile memory.
2. method according to claim 1, is characterized in that, applies voltage until before being stabilized in the step of default operating voltage, also comprise described to nonvolatile memory:
Exclusive signal is applied to described nonvolatile memory;
And,
Before the step powered on of the described nonvolatile memory of described end, also comprise:
Discharge described exclusive signal.
3. method according to claim 1, is characterized in that, described step of repairing the storage unit of erasing is:
Write operation is carried out to the described storage unit crossing erasing.
4. method according to claim 1, is characterized in that, applies voltage until after being stabilized in the step of default operating voltage, also comprise described to nonvolatile memory:
Read the internal configuration information that described nonvolatile memory is executed.
5. method according to claim 4, is characterized in that, after the step of the internal configuration information executed at described reading non-volatile storage, also comprises:
If receive the enable signal that nonvolatile memory sends, then perform and erasing verification was carried out to described nonvolatile memory, judge whether the step of the storage unit that there is erasing;
If do not receive the enable signal that nonvolatile memory sends, then return and voltage is applied until be stabilized in the step of default operating voltage to described nonvolatile memory.
6. method according to claim 1, is characterized in that, describedly carries out erasing verification to nonvolatile memory, and the step judging whether to exist the storage unit of wiping comprises:
Detect described storage unit and whether there is leakage current;
If so, the storage unit that there is erasing is then judged to be;
If not, then the storage unit that there is not erasing is judged to be.
7. the device that powers on of nonvolatile memory, it is characterized in that, described nonvolatile memory comprises storage unit, and described device comprises:
Voltage applies module, for applying voltage until be stabilized in default operating voltage to described nonvolatile memory;
Cross erasing correction verification module, for carrying out erasing verification to described nonvolatile memory, judge whether the storage unit that there is erasing; If there is the storage unit of erasing, then call reparation module, if there is not the storage unit of erasing, then call end module;
Repairing module, for repairing the described storage unit crossing erasing, then returning erasing correction verification module;
Terminate module, for terminating powering on of described nonvolatile memory.
8. device according to claim 7, is characterized in that, also comprises:
Exclusive signal-applying module, for applying exclusive signal to described nonvolatile memory;
Exclusive signal release module, for discharging described exclusive signal.
9. device according to claim 7, is characterized in that, described reparation module comprises:
Write operation submodule, for carrying out write operation to the described storage unit crossing erasing.
10. device according to claim 7, is characterized in that, also comprises:
Internal configuration information read module, for reading the internal configuration information that described nonvolatile memory is executed.
11. devices according to claim 10, is characterized in that, also comprise:
Execution module, if for receiving the enable signal that nonvolatile memory sends, then called erasing correction verification module;
Return module, if for not receiving the enable signal that nonvolatile memory sends, then return voltage applies module.
12. devices according to claim 7, is characterized in that, described erasing correction verification module of crossing comprises:
Whether detection sub-module, exist leakage current for detecting described storage unit; If so, then call the first determination module, if not, then call the second determination module;
First determination module, for being judged to be the storage unit that there is erasing;
Second determination module, for being judged to be the storage unit that there is not erasing.
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