CN104281190B - 一种可同时产生零温度系数电流和零温度电压的基准源 - Google Patents
一种可同时产生零温度系数电流和零温度电压的基准源 Download PDFInfo
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CN110262622B (zh) * | 2019-07-04 | 2021-01-29 | 中国电子科技集团公司第五十八研究所 | 一种具有快速启动和高psrr的带隙基准源 |
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CN1825240A (zh) * | 2006-03-24 | 2006-08-30 | 启攀微电子(上海)有限公司 | 一种低压差线性稳压器电路 |
CN101226413A (zh) * | 2008-01-22 | 2008-07-23 | 无锡硅动力微电子股份有限公司 | 抑止失调的cmos能隙基准电路 |
CN103064457A (zh) * | 2012-12-21 | 2013-04-24 | 厦门大学 | 一种基于负反馈的cmos带隙基准电路 |
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US20080157746A1 (en) * | 2006-12-29 | 2008-07-03 | Mediatek Inc. | Bandgap Reference Circuits |
KR100901769B1 (ko) * | 2007-11-15 | 2009-06-11 | 한국전자통신연구원 | 저전압 고정밀도 밴드갭 기준전압 발생기 |
KR20100077271A (ko) * | 2008-12-29 | 2010-07-08 | 주식회사 동부하이텍 | 기준전압 발생회로 |
JP6073112B2 (ja) * | 2012-11-13 | 2017-02-01 | ルネサスエレクトロニクス株式会社 | 基準電圧発生回路 |
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CN1825240A (zh) * | 2006-03-24 | 2006-08-30 | 启攀微电子(上海)有限公司 | 一种低压差线性稳压器电路 |
CN101226413A (zh) * | 2008-01-22 | 2008-07-23 | 无锡硅动力微电子股份有限公司 | 抑止失调的cmos能隙基准电路 |
CN103064457A (zh) * | 2012-12-21 | 2013-04-24 | 厦门大学 | 一种基于负反馈的cmos带隙基准电路 |
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Address after: 610041 4, A District, 1 building 200, Tianfu five street, hi tech Zone, Chengdu, Sichuan. Patentee after: Chengdu Rui core micro Polytron Technologies Inc Address before: 610000 1705, 17, 1, 1800, Yizhou Avenue, high tech Zone, Chengdu, Sichuan Patentee before: Chengdu Ruicheng Xinwei Technology Co., Ltd. |
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Denomination of invention: Reference source capable of simultaneously generating zero-temperature-coefficient current and zero-temperature-coefficient voltage Effective date of registration: 20190311 Granted publication date: 20160831 Pledgee: Agricultural Bank of China Limited by Share Ltd Chengdu Shuangliu Branch Pledgor: Chengdu Rui core micro Polytron Technologies Inc Registration number: 2019510000025 |
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Date of cancellation: 20210226 Granted publication date: 20160831 Pledgee: Agricultural Bank of China Limited by Share Ltd. Chengdu Shuangliu Branch Pledgor: CHENGDU ANALOG CIRCUIT TECHNOLOGY Inc. Registration number: 2019510000025 |