CN104280963A - 阵列基板及其制造方法、显示装置 - Google Patents

阵列基板及其制造方法、显示装置 Download PDF

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CN104280963A
CN104280963A CN201410592074.9A CN201410592074A CN104280963A CN 104280963 A CN104280963 A CN 104280963A CN 201410592074 A CN201410592074 A CN 201410592074A CN 104280963 A CN104280963 A CN 104280963A
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王振伟
王凯旋
方业周
朱红
于洪俊
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BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
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Priority to US14/785,811 priority patent/US9632369B2/en
Priority to PCT/CN2015/074284 priority patent/WO2016065798A1/zh
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Abstract

本发明实施例公开了一种阵列基板及其制造方法、显示装置，涉及显示领域，能够提高像素边缘透过率，从而改善显示效果。本发明提供的阵列基板，包括：像素电极和公共电极，还包括：辅助公共电极，所述辅助公共电极的设置位置与相邻两个像素电极之间的间隔位置相对应，并与所述公共电极电连接。

Description

阵列基板及其制造方法、显示装置
技术领域
本发明涉及显示领域，尤其涉及一种阵列基板及其制造方法、显示装置。
背景技术
FFS(Fringe Field Switching，边缘场开关技术)显示模式是平面场模式的一种，具有透过率高、画面清晰的优点。
如图1所示，为一种FFS模式显示装置的结构示意图，在阵列基板上制作数据线1后，形成绝缘层，其上形成公共电极2，再形成绝缘层3，在绝缘层3之上形成像素电极4，彩膜基板上形成有黑矩阵7和彩膜6，阵列基板和彩膜基板之间夹设有液晶层5。其中，像素电极4制作成狭缝结构，在像素电极4和公共电极3之间形成驱动电场8驱动液晶，从而实现图像显示。但是众所周知，对于FFS显示模式的显示装置，其在像素的边缘，驱动电场相对于像素内的驱动电场弱很多，液晶分子几乎不发生偏转，所以在像素边缘透过率较低，影响显示效果。
发明内容
本发明的实施例提供一种阵列基板及其制造方法、显示装置，能够提高像素边缘透过率，从而改善显示效果。
为达到上述目的，本发明的实施例采用如下技术方案：
一种阵列基板，包括：像素电极和公共电极，还包括：辅助公共电极，所述辅助公共电极的设置位置与相邻两个像素电极之间的间隔位置相对应，并与所述公共电极电连接。
可选地，所述辅助公共电极为长条状。
优选地，所述阵列基板，还包括：数据线；所述辅助公共电极位于所述数据线上方的对应位置处。
进一步地，所述的阵列基板，还包括：栅线；与所述栅线相对应的位置处也设置有所述辅助公共电极。
优选地，所述辅助公共电极与所述像素电极同层设置。
可选地，所述像素电极和所述公共电极之间设置有绝缘层；所述辅助公共电极通过贯穿所述绝缘层的过孔与所述公共电极电连接。
可选地，所述像素电极为狭缝电极。
可选地，所述公共电极为板式电极。
本发明还提供一种显示装置，包括权利要求任一项所述的阵列基板。
本发明还提供一种阵列基板制造方法，包括形成像素电极的工序，以及形成公共电极的工序，还包括：形成辅助公共电极的工序，所述辅助公共电极的设置位置与相邻两个像素电极之间的间隔位置相对应，并与所述公共电极电连接。
本发明实施例提供的阵列基板及其制造方法、显示装置，在相邻两个像素电极之间的间隔位置还额外设置有辅助公共电极，且该辅助公共电极与公共电极电连接，这样，除像素电极和公共电极之间形成电场外，像素电极还能与辅助公共电极形成额外的辅助电场驱动像素边缘的液晶分子，所以像素边缘的驱动电场会变强，液晶分子偏转更充分，透过率更高，因而本实施例技术方案能够提高像素边缘的透过率，改善显示效果。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1为现有FFS模式显示装置的结构示意图；
图2为本发明实施例提供的阵列基板的结构示意图；
图3为本发明实施例一种具体实施方式中像素电极和辅助公共电极所在层的平面结构示意图；
图4为本发明实施例提供的FFS模式显示装置的结构示意图；
图5为现有技术和本发明实施例提供的显示装置的透过率分布比较模拟图。
附图标记
1-数据线，2-公共电极，3-绝缘层，4-像素电极，5-液晶，6-彩膜，7-黑矩阵，8-驱动电场，9-辅助公共电极，10-过孔。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。
本发明实施例提供一种阵列基板，如图2所示，该阵列基板包括：像素电极4和公共电极2，除此之外该阵列基板还包括：辅助公共电极9，辅助公共电极9的设置位置与相邻两个像素电极4之间的间隔位置相对应，并与公共电极2电连接。
本发明实施例提供的阵列基板，适用于平面场模式的显示装置如FFS、IPS(In Plane Switching，平面开关技术)、ADS(Advanced-Super DimensionalSwitching，高级超维场开关技术)等，在相邻两个像素之间的间隔位置额外设置辅助公共电极9，并且该辅助公共电极9与公共电极2相连接，这样除像素电极和公共电极之间形成电场外，像素电极还与辅助公共电极形成额外的辅助电场(如图2中的虚线所示)驱动像素边缘的液晶分子，与现有技术相比，本实施例技术方案能够提高像素边缘的透过率，改善显示效果。
可选地，上述的辅助公共电极9为长条状。辅助公共电极9设置在任意两个像素电极之间，呈长条状，且长度方向与像素电极的边缘平行。
本实施例辅助公共电极9的设置位置对应在两个像素之间的位置。其中优选地，上述阵列基板还包括：数据线1；而辅助公共电极9位于数据线1上方的对应位置处。进一步优选地，阵列基板还包括：栅线(图中未示出)，与栅线相对应的位置处也设置有辅助公共电极9。
优选地，上述辅助公共电极9与像素电极4同层设置，制备时可与像素电极4同步形成，不需要额外增加工序。
一种具体的实施方式中，辅助公共电极9与像素电极4同层设置，该辅助公共电极9位于相邻像素电极4之间的间隔位置，如图3所示，该辅助公共电极9为沿数据线延伸方向和沿栅线延伸方向形成的纵横交错的格子图案，像素电极4位于格子的中间。
具体地，像素电极4和公共电极2之间设置有绝缘层3；辅助公共电极9通过贯穿绝缘层3的过孔10与公共电极2电连接。上述像素电极4为狭缝电极；公共电极3可以为板式电极，也可以为狭缝电极。
本实施例提供的阵列基板，适用于平面场模式的显示装置如FFS、IPS、ADS等，能够提高像素边缘的透过率，避免显示不均，提高显示效果。
如图4所示，本发明实施例还提供一种显示装置，其包括上述任意一种阵列基板，阵列基板该显示装置还包括彩膜基板，彩膜基板上设置有彩膜6和黑矩阵7，阵列基板和彩膜基板之间夹设有液晶5。所述显示装置像素边缘的透过率与像素中心的透过率差值变小，显示均匀度提升，从而可获得更高的显示品质。所述显示装置可以为：液晶面板、电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本发明实施例还提供一种阵列基板制造方法，包括形成像素电极的工序，以及形成公共电极的工序，还包括：形成辅助公共电极的工序，所述辅助公共电极的设置位置与相邻两个像素电极之间的间隔位置相对应，并与所述公共电极电连接。
本实施例辅助公共电极的图形可参照上述说明，在此不再赘述。优选地，形成素电极的工序与所述形成辅助公共电极的工序同步完成，不需要因为辅助公共电极而额外增加工序。
以图2为例，下面对本发明实施例提供的阵列基板制造方法进行详细说明；在基板上制作数据线1后，形成绝缘层；其上形成公共电极2，再形成绝缘层3，在绝缘层3之上形成像素电极4，两像素之间还同步形成有一额外的辅助公共电极9，并通过绝缘层3上的过孔10连接于公共电极2。因为辅助公共电极9距离像素电极4更近，所以像素边缘电场会变强，液晶分子偏转更充分，透过率更高。
附：现有方案(没有设置有辅助公共电极9)与本申请方案(设置有辅助公共电极9)的透过率分布模拟试验的对比结果图，如图5所示。其中曲线A为本方案的透过率分布模拟，曲线B为现有方案的透过率分布模拟。图5的纵向坐标标示相对亮度，对曲线A而言，横向坐标标示图1中方框区域A的横向，对曲线B而言，横向坐标标示图2和图4中方框区域A’的横向。可以看出，本方案光透过区更靠近数据线1的方向，所以有更高的透过率，具体模拟显示试验表明整体像素透过率提升4.5％。
本实施例提供的阵列基板制造方法，适用于平面场模式的显示装置如FFS、IPS、ADS等，在像素电极时同步在相邻像素电极之间的间隔区域设置辅助的公共电极，能够提高像素边缘的透过率，避免显示不均，提高显示效果，并且不需要额外增加工序。
本说明书中的各个实施例均采用递进的方式描述，各个实施例之间相同相似的部分互相参见即可，每个实施例重点说明的都是与其他实施例的不同之处。尤其，对于方法实施例而言，由于其基本相似于设备实施例，所以描述得比较简单，相关之处相互参见即可。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应该以权利要求的保护范围为准。

Claims (10)

1.一种阵列基板，包括：像素电极和公共电极，其特征在于，还包括：辅助公共电极，所述辅助公共电极的设置位置与相邻两个像素电极之间的间隔位置相对应，并与所述公共电极电连接。
2.根据权利要求1所述的阵列基板，其特征在于，所述辅助公共电极为长条状。
3.根据权利要求1或2所述的阵列基板，其特征在于，还包括：数据线；
所述辅助公共电极位于所述数据线上方的对应位置处。
4.根据权利要求3所述的阵列基板，其特征在于，还包括：栅线；
与所述栅线相对应的位置处也设置有所述辅助公共电极。
5.根据权利要求1或2所述的阵列基板，其特征在于，
所述辅助公共电极与所述像素电极同层设置。
6.根据权利要求5所述的阵列基板，其特征在于，所述像素电极和所述公共电极之间设置有绝缘层；
所述辅助公共电极通过贯穿所述绝缘层的过孔与所述公共电极电连接。
7.根据权利要求1或2所述的阵列基板，其特征在于，
所述像素电极为狭缝电极。
8.根据权利要求1或2所述的阵列基板，其特征在于，
所述公共电极为板式电极。
9.一种显示装置，其特征在于，包括权利要求1-8任一项所述的阵列基板。
10.一种阵列基板制造方法，包括形成像素电极的工序，以及形成公共电极的工序，其特征在于，还包括：
形成辅助公共电极的工序，所述辅助公共电极的设置位置与相邻两个像素电极之间的间隔位置相对应，并与所述公共电极电连接。
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