CN104272455A - 镀铝铜结合导线及制作其的方法 - Google Patents
镀铝铜结合导线及制作其的方法 Download PDFInfo
- Publication number
- CN104272455A CN104272455A CN201380023792.8A CN201380023792A CN104272455A CN 104272455 A CN104272455 A CN 104272455A CN 201380023792 A CN201380023792 A CN 201380023792A CN 104272455 A CN104272455 A CN 104272455A
- Authority
- CN
- China
- Prior art keywords
- wire
- coating
- copper core
- scope
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21F—WORKING OR PROCESSING OF METAL WIRE
- B21F9/00—Straining wire
- B21F9/005—Straining wire to affect the material properties of the wire
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/023—Alloys based on aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/431—Pre-treatment of the preform connector
- H01L2224/4312—Applying permanent coating, e.g. in-situ coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/431—Pre-treatment of the preform connector
- H01L2224/4312—Applying permanent coating, e.g. in-situ coating
- H01L2224/43125—Plating, e.g. electroplating, electroless plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45541—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45624—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48624—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
- H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48724—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
- H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48817—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
- H01L2224/48824—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/85424—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00015—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
- H01L2924/20303—Ultrasonic frequency [f] 50 Khz=<f< 75 KHz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
- H01L2924/20304—Ultrasonic frequency [f] 75 Khz=<f< 100 KHz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
- H01L2924/20305—Ultrasonic frequency [f] 100 Khz=<f< 125 KHz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/2076—Diameter ranges equal to or larger than 100 microns
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
- Y10T428/1275—Next to Group VIII or IB metal-base component
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Non-Insulated Conductors (AREA)
Abstract
本发明涉及导线,优选地用于微电子学中的结合的结合导线,包括具有表面的铜芯(2)和涂层(3),该涂层(3)被叠加在铜芯(2)的表面上,其中,涂层(3)包括铝,其中,涂层(3)的厚度与铜芯(2)的直径的比在从0.05至0.2μm范围内,其中,铜芯(2)的直径的标准偏差与铜芯(2)的直径的比在从0.005至0.05μm范围内,并且其中,涂层(3)的厚度的标准偏差与涂层(3)的厚度的比在从0.05至0.4μm范围内,其中导线具有在从100μm至600μm范围内的直径。本发明还涉及一种用于制作导线的工艺、由所述工艺可获得的导线、包括至少两个元件和至少上述导线的电设备、包括所述电设备的推进设备和由楔结合来通过上述导线连接两个元件的工艺。
Description
本发明涉及优选地用于微电子学中的结合的导线,包括具有表面的铜芯和b.涂层,该涂层被叠加在铜芯的表面上,其中,涂层包括铝,其中,涂层的厚度与铜芯的直径的比在从0.05至0.2范围内,其中,铜芯的直径的标准偏差与铜芯的直径的比在从0.005至0.05范围内,并且其中,涂层的厚度的标准偏差与涂层的厚度的比在从0.05至0.4范围内,其中,导线具有在从100 μm至600 μm范围内的直径。本发明还涉及一种用于制作导线的工艺、由所述工艺可获得的导线、包括至少两个元件和至少上述导线的电设备、包括所述电设备的推进设备和由楔结合通过上述导线来连接两个元件的工艺。
结合导线在半导体器件的制造中被用于在半导体器件制造期间将集成电路和印刷电路板电互连。此外,结合导线在功率电子应用中被用来将晶体管、二极管等与外壳的焊盘或插脚电连接。虽然结合导线开始由金制成,但现在使用较不昂贵的材料,诸如铜或铝。虽然铜线提供非常好的电和热传导性,但铜线的楔结合与由铝制成的导线相比具有其挑战。此外,铜线易受导线的氧化。
相对于导线几何结构,最常见的是圆形截面的结合导线和具有或多或少矩形截面的结合带。两个类型的导线几何结构都具有其优点,使得其对特定的应用有用。因此,两个类型的几何结构在市场中具有其份额。例如,结合带针对给定的截面面积具有较大接触面积。然而,带的弯曲是有限的,并且在结合时必须观察带的取向以便到达带与其被结合的元件之间的可接受电接触。转到结合导线,这些弯曲起来更加灵活。然而,结合涉及到结合工艺中的导线的焊接或较大变形,其可造成损害或者甚至毁坏结合焊盘和被结合到那的元件的底层电结构。
某些最近开发针对具有芯和壳的结合导线,其是例如涂层。作为芯材料,可由于高电导率而选择铜或金。关于涂层,铝是更常见的选择中的一个。这些芯壳结合导线将铜线的优点中的某些和铝线的某些相组合。最近成就使得将标准楔结合工艺用于此类镀铝铜线成为可能。无论如何,一直存在对进一步改善关于结合导线本身和结合工艺的结合导线技术的需要。
因此,本发明的目的是提供改善的导线。
因此,本发明的另一目的是提供导线,其具有良好的处理性质且其在互连时不具有特定需要,因此节省成本。
本发明的目的还提供具有优良电和热传导性的导线。
本发明的又一目的是提供展现改善的可靠性的导线。
本发明的又一目的是提供展现优良的可结合性的导线。
本发明的另一目的是提供对腐蚀和/或氧化具有改善的抵抗的导线。
另一目的是提供将与标准芯片和结合技术一起使用的新型导线,该新型导线相比于常规导线而言确保延长的寿命。
又一目的是提供改善的电气设备,特别是用于功率电子装置,其与其中用标准铝线来将电气元件互连的常规设备相比具有延长的寿命。
另一目的是提供改善的电气设备,特别是用于功率电子装置,其与其中结合基于铝线的常规设备相比在较高电流流动下操作。
本发明的另一目的是提供此类改善的电气设备,其具有与上述常规设备相同的尺寸和类似的芯片设计。另一目的是提供用于在最初被设计成用于常规电气设备制造的生产线上制造此类改善的电气设备的装置。这将使用于实施改善技术的成本最小化。
又一目的是提供改善的电气设备,其中与常规电气设备相比降低了非故意内部电桥接的概率。此外,目的是简化或者甚至能够省略关于电气设备中的非故意内部桥接的特定预防措施。
令人惊讶地,已发现本发明的导线将解决上述目的中的至少一个。此外,已发现一种用于制造这些导线的工艺,其克服了制造导线的挑战中的至少一个。此外,发现包括本发明的导线的半导体在根据本发明的导线与其它电气元件(例如印刷电路板、焊盘/插脚等)之间的接口处更加可靠。
对上述目的中的至少一个的解决方案的贡献由形成种类的权利要求的主题提供,由此,形成种类的独立权利要求的从属子权利要求表示本发明的优选方面,其主题同样地对解决上述目的中的至少一个作出贡献。
本发明的第一方面是一种导线,包括:
a. 具有表面(15)的铜芯(2);以及
b. 涂层(3),叠加在铜芯(2)的表面(15)上,
其中,涂层(3)包括铝,
其中,涂层(3)的厚度与铜芯(2)的直径的比在从0.05至0.2、优选地从0.05至0.15或从0.1至0.15的范围内,
其中,铜芯(2)的直径的标准偏差与铜芯(2)的直径的比小于0.1,优选地小于0.05或小于0.03或从0.03至0.001,
其中,涂层(3)的厚度的标准偏差与涂层(3)的厚度的比在从0.05至0.4 μm范围内,优选地从0.1至0.3,
其中,导线具有从100 μm至600 μm范围内,优选地在从150 μm至550 μm范围内或者从230 μm至500 μm的直径。
导线优选地是用于微电子装置中的结合的结合导线。该导线优选地是一件物体。应在导线的纵向延伸的至少80%、优选地90%内满足用于上述截面图和直径的准则。
本上下文中的术语“截面图”指的是通过导线切割的视图,其中,切割的平面垂直于导线的纵向延伸。在导线的纵向延伸上的任何位置处可以找到截面图。
在截面中通过导线的“最长路径”是可以通过截面图的平面内的导线的截面敷设的最长弦(chord)。
在截面中通过导线的“最短路径”是垂直于上文定义的截面图的平面内的最长路径的最长弦。
如果导线具有完美的圆形截面,则最长路径和最短路径变得不可区别且共享相同的值。
术语“直径”是任何平面和在任何方向上的所有几何直径的算术平均,其中,所有平面都垂直于导线的纵向延伸。
在本发明的上下文中的术语“叠加”用来描述第一项目(例如铜芯)相对于第二项目(例如涂层)的相对位置。可能地,可在第一和第二项目之间布置诸如中间层之类的更多项目。优选地,第二项目被至少部分地叠加在第一项目的表面上,诸如相对于第一项目的总表面达至少30 %、50 %、70 %或达至少90%。
在本发明的上下文中的术语“厚度”被用来定义在垂直于铜芯的纵轴的方向上的层的尺寸,该层被至少部分地叠加在表面铜芯上。
在本发明的上下文中的术语“中间层”是铜芯与涂层之间的导线区域。在此区域中,如在芯中的材料以及如在涂层中的材料以组合方式存在,例如以至少一个金属间相的形式。
在本发明的上下文中的术语“金属间相”被用来定义两个或更多金属的相,其中,不同的元件被排序到结构中的不同的位点中,该位点具有不同的局部环境且常常是明确定义的固定化学计量。这是关于合金的差异,其中不同的元素被随机地分布。
在如上文定义的截面图中确定了长度的所有上述尺寸,例如厚度、直径、最长路径、最短路径。
无涂覆铜线的铜芯的“表面”是导线/空气界面。
涂覆的、可能退火的导线的铜芯的“表面”被定义成是围绕其中心的铜芯的虚拟界限,该虚拟界限是Cu的浓度偏离导线中心处的Cu的浓度超过9.9%-wt的地方,该中心由如上文定义的最短和最长路径两者的交叉点定义。
优选地,本发明的导线在导线的截面图中具有基本上圆形的区域。
根据本发明的铜芯包括按重量计至少95%、优选地按重量计至少98%的至少99.9 % Cu的纯度的元素铜(Cu),每个基于铜芯的总重量。优选地,铜芯的纯度为至少99.99 %或99.999 %或99.9999 %。
包括铝的涂层优选地选自由铝、铝合金或两者的组合组成的组。
优选铝是至少99.9 % Al的纯度的元素铝(Al),更优选地,铝的纯度为至少99.99 % Al或99.999 % Al。通常,此类涂层在铝—空气界面处形成氧化铝薄层。
优选地,涂层包括按重量计至少80 %、优选地按重量计至少90 %的99.9 %的纯度、而更优选地99.99 %的纯度的铝,每个基于涂层的总重量。
铝合金的优选示例是具有镁的合金(AlMg)和基于合金的总量,具有1 %-wt的硅的铝的合金(AlSi1)。
根据本发明的另一方面,铜芯的直径在从70至500μm、优选地从150至400μm或从200至300 μm或从230至250μm范围内,每个是在导线的截面图中确定的。
根据本发明的另一方面,涂层的厚度在从10至60μm、优选地从20至50μm、优选地从20至40μm或从25至35μm范围内,每个是在导线的截面图中确定的。应在导线的纵向延伸的至少80 %、优选地90 %内满足用于涂层的厚度的上述准则。
根据本发明的另一方面,在芯与涂层之间布置中间层。该中间层优选地包括至少一个金属间相,其包括芯的材料和涂层的材料。中间层通常示出用于涉及到的材料中的每个的浓度梯度。如果两个材料都是金属,则形成金属间相。
根据本发明的优选方面,在芯与涂层之间布置中间层,其中,该中间层邻近于铜芯且邻近于涂层。
导线的中间层被定义成是铜芯与涂层之间的导线区域,其中,Cu的浓度基于中间层的总重量偏离基于铜芯总重量的铜芯中的Cu浓度超过5%-wt,并且其中,Al的浓度基于中间层的总重量偏离基于涂层的总重量的涂层中的Al的浓度超过5%-wt。
可以例如使用光显徽术或扫描电子显微术在导线的截面图中确定上述尺寸,即涂层的厚度、中间层的厚度和铜芯的直径。在光显微术中,用铜红对铜芯进行着色,涂层是银色的且中间层是灰色的。可以使用组合SEM/EDX来确定上文所述的铜和铝的浓度。(扫描电子显微术/能量色散X射线光谱术)。
根据本发明的另一方面,导线的任何截面图中的中间层的面积份额在从0.4至15 %、优选地从0.8至8.5%范围内,每个基于导线的截面的总面积。
根据本发明的另一方面,中间层的厚度在从0.1至5 μm、优选地从0.5至3 μm范围内。应在导线的纵向延伸的至少80 %、优选地90 %内满足用于中间层的厚度的上述准则。有时,中间层的厚度方面的偏差可由于中间层的缺陷(例如气孔)而发生。
根据本发明的另一方面,中间层的厚度的标准偏差在从0.1至5 μm、优选地从0.4至4 μm或从0.5至3 μm范围内。
根据本发明的另一方面,耗散功对于根据本发明的导线而言是对于由纯Al制成的参考导线的耗散功的至少2倍、优选地至少3倍高。优选地,在从20000至120000测试循环范围内的测试循环中,耗散功对于根据本发明的导线而言是对于由纯Al制成的参考导线的耗散功的至少2倍、优选地至少3倍高。更优选地,在从20000至120000测试循环范围内的所有测试循环中,耗散功对于根据本发明的导线而言是对于由纯Al制成的参考导线的耗散功的至少2倍、优选地至少3倍高。然而,在某些情况下,对于根据本发明的导线的耗散功不超过由纯Al制成的参考导线的耗散功的10倍高。此参考导线是由散布50 ppm镍的99.999 %的纯度的铝制成的铝线(由Heraeus/德国以“AL-H11 CR”之名出售),并且其具有与本发明的导线相同的截面面积。
根据本发明的另一方面,最大应变对于根据本发明的导线而言是对于由纯Al制成的参考导线的最大应变的至少1.5倍、优选地至少2倍高。优选地,在从20000至120000测试循环范围内的测试循环中,最大应变对于根据本发明的导线而言是来自由纯Al制成的参考导线的最大应变的至少2倍、优选地至少4倍高。更优选地,在从20000至120000测试循环范围内的所有测试循环中,最大应变对于根据本发明的导线而言是由纯Al制成的参考导线的最大应变的至少1.5倍、优选地至少2倍高。然而,在某些情况下,对于根据本发明的导线的最大应变率不超过由纯Al制成的参考导线的最大应变的10倍高。此参考导线是由散布50 ppm镍的99.999 %的纯度的铝制成的铝线,(由Heraeus/德国以“AL-H11 CR”之名出售),并且其具有与本发明的导线相同的截面面积。
根据本发明的另一方面,在从20000至120000测试循环范围内的测试循环中,功率循环测试中的在相同条件下的循环数目对于根据本发明的导线而言是由纯Al制成的参考导线的功率循环测试的至少3倍、优选地至少4倍高。更优选地,在从20000至120000测试循环范围内的所有测试循环中,功率循环测试中的在相同条件下的循环数目对于根据本发明的导线而言是由纯Al制成的参考导线的功率循环测试的至少3倍、优选地至少4倍高。然而,在某些情况下,功率循环测试中的相同条件下的循环数目是由纯Al制成的参考导线的耗散功的不超过50倍高。此参考导线是由散布50 ppm镍的99.999 %的纯度的铝制成的铝线(由Heraeus/德国以“AL-H11 CR”之名出售),并且其具有与本发明的导线相同的截面面积。
根据本发明的另一方面,导线的导线结合剪切力对于根据本发明的导线而言至少与对于由纯Al制成的参考导线一样高。下面描述此测试。此参考导线是由散布50 ppm镍的99.999 %的纯度的铝制成的铝线,(由Heraeus/德国以“AL-H11 CR”之名出售),并且其具有与本发明的导线相同的截面面积。
根据本发明的另一方面,导线的导线拉力对于导线而言比对于由纯Al制成的参考导线至少高10%、优选地至少高20%。此参考导线是由散布50 ppm镍的99.999 %的纯度的铝制成的铝线(由Heraeus/德国以"AL-H11 CR"之名出售),并且其具有与本发明的导线相同的截面面积。
根据本发明的另一方面,本发明的导线满足上述测试条件(即耗散功、最大应变、功率循环测试、导线结合剪切力和楔拉力)中的至少两个或者甚至全部。
本发明的另一方面是一种用于制造导线的工艺,至少包括以下步骤:
a. 提供包括具有表面的铜芯和涂层的导线前体,该涂层被叠加在铜芯的表面上,其中,该涂层包括铝,
其中,涂层的厚度与铜芯的直径的比在从0.05至0.2、优选地从0.05至0.15或从0.1至0.15的范围内,
其中,铜芯的直径的标准偏差与铜芯的直径的比小于0.1,优选地小于0.05或小于0.03或从0.03至0.001,
其中,涂层的厚度的标准偏差与涂层的厚度的比在从0.05至0.4μm范围内,优选地从0.1至0.3,
其中,导线前体具有在从0.5至5mm范围内的直径,
b. 对导线前体进行成形,
c. 对导线前体进行退火,由此获得导线,
其中,导线具有从100 μm至600 μm范围内,优选地在从150 μm至550 μm范围内或者从230 μm至500 μm的直径。
可以如在步骤a.中通过在铜线的表面的至少一部分上形成铝涂层来获得导线前体。优选地,在铜线的表面的100%或从80至100 %或从60至80 %上形成铝层,每个相对于铜线的总表面面积。已知用于在铜表面上且特别是在铜线上形成铝层的许多技术。优选技术是镀敷,诸如电镀和无电电镀、由气相的铝的沉积,诸如溅射、离子镀、真空蒸发和化学汽相沉积以及由熔体的铝的沉积。
可以采用铜线的预处理来使表面粗糙度适合和/或向铜线的表面添加图案。已知用以使铜线的表面适合的许多技术。优选技术是冷轧成型、研磨和电化学研磨。
已知用以对导线前体进行成形的许多技术。优选技术是滚轧、旋锻、模拉等,其中模拉是特别优选的。更优选地,在3至20个步骤中对导线前体进行拉伸,其中,在每个步骤中,执行在长度方面从6至18%的导线前体的延长。可以采用增滑剂。适当的增滑剂有许多且是技术人员已知的。
在本领域中已知用以对导线进行退火的许多程序,例如可以在连续或在不连续过程两者中执行导线的退火。在特殊应用中,甚至可将连续和不连续过程相组合。
根据本发明的优选方面,通过将导线前体加热至在从140至400℃、优选地从160至350℃或从200至300℃或从220至280℃范围内的温度来执行退火,并且保持该温度达30分钟至5小时,优选地从30分钟至3小时。然后,将通过使导线前体退火而获得的导线冷却至室温。可以以各种方式来执行该冷却。一个适当的方式是在离开加热区时在环境温度下将导线暴露于周围空气。根据上述程序的导线到室温(T=20℃)的冷却通常可以在24小时内实现。应例如通过浸入冷水中等避免导线的淬火。因此,另一方面是一种其中不通过导线的淬火来执行导线在离开加热区时的冷却的工艺。
根据本发明的另一方面,在连续过程中、更优选地在管式炉中执行退火。甚至更优选地,由单拉伸机从提供导线前体及成形和退火的步骤来拉伸导线。
管式炉中的退火期间的拉伸速度取决于管式炉的管的长度。管越长,更高的拉伸速度越是可行,以便获得能量到一块导线的一定暴露。管式炉的管的优选长度在从0.8至2.5米或从1至2米或从1.5至2.5米范围内。
可将炉的管中的温度调整到拉伸速度或者独立地进行评估。管中的优选温度在从150至600℃或从200至600℃或从250至550℃范围内。一般地,将温度选择成低于在其处存在于导线中的组分中的至少一个或至少两个组分的混合物液化的温度。例如,如果对部分可溶或不可溶的双或多组分合金进行退火,则烘箱中的温度不应超过合金的低共熔温度。
根据本发明的另一方面,将炉中的温度选择成比在该其处导线的组分中的至少一个或至少两个组分的混合物液化的温度低至少30℃或50℃或80℃。
根据本发明的另一方面,在从1至20米/分或从1至16米/分或从2至18米/分范围内选择退火速度。
根据本发明的另一方面,可在惰性气氛或还原气氛中执行管式炉中的退火。这适用于连续以及不连续处理两者中的退火。许多惰性气氛以及还原气氛在本领域中是已知的。关于已知的惰性气氛,氮气是优选的。关于已知的还原气氛,氢气是优选地。此外,优选还原气氛是氮气和氢气的混合物。优选地,氮气和氢气的混合物是优选地,其在从90至98 % - Vol.氮气和从10至2 Vol - %氢气范围内,每个参考混合物的总体积。氮气/氢气的优选混合物等于93/7、95/5和97/3 Vol-%/Vol-%,每个基于混合物的总体积。如果导线的表面的某些部分对被空气中的氧所氧化敏感,例如如果导线的铜被暴露于其表面,则在退火中施加还原气氛是特别优选的。
根据本发明的另一方面,在退火期间形成中间层。
本发明的另一方面是通过上文定义的工艺可获得的导线。
根据本发明的另一方面,导线的特征在于以下特征中的至少一个:
a. 耗散功对于根据本发明的导线而言是由纯Al制成的参考导线的耗散功的至少2倍高;
b. 单轴循环测试中的最大应变对于根据本发明的导线而言是由纯Al制成的参考导线的最大应变的至少2倍高;
c. 功率循环测试对于根据本发明的导线而言是对于由纯Al制成的参考导线的至少3倍高;
d. 根据本发明的导线的导线结合剪切力对于该导线而言与对于由纯Al制成的参考导线一样高;
e. 根据本发明的导线的导线拉力对于该导线而言比对于由纯Al制成的参考导线高至少10%、优选地至少20%。
f. 根据本发明的导线的电导率比由纯Al制成的参考导线的电导率高出在从20 %至55 %范围内。
上述由纯Al制成的参考导线是由散布50 ppm镍的99.999 %纯度的铝制成的铝线(由Heraeus/德国以“AL-H11 CR”之名出售),并且其具有与本发明的导线相同的截面面积。
本发明的另一方面是一种包括两个元件和至少如上文定义的导线或如上所述地制造的导线的电设备。
根据本发明的另一方面,该电设备中的至少一个导线通过楔结合、优选地通过超声楔楔结合而被连接到电设备的另一元件。
根据本发明的另一方面,元件中的至少一个选自由基板、IGBT(即:绝缘栅双极晶体管)、集成电路、晶体管、诸如发光二极管、光电二极管之类的二极管组成的组。
本发明的另一方面是上述导线或根据如上所述的工艺制造的导线在控制单元与受控设备之间的楔楔结合互连中的使用。
本发明的另一方面是推进设备、优选地推进交通工具、太阳电池或风力涡轮机,该推进设备包括至少一个如上所述的电设备。
本发明的另一方面是一种用于制作电设备的工艺,包括步骤
a. 提供至少两个元件;
b. 通过如上所述的导线将两个元件连接,其中,所述连接中的至少一个是通过楔结合执行的。
楔结合技术在本领域中是已知的且在文献中被广泛地描述,例如在Shankara K. Prasad的Kluwer Academic Publishers, 2004, ISBN 1-4020-7762-9中的“Advanced Wirebond Interconnection Technology”中,特别是第I章(介绍)和第IV章(工艺技术)。
附图说明
在图中举例说明了本发明的主题。然而,图形并不意图以任何方式限制本发明或权利要求的范围。
在图1中,描述了导线1。
图2示出了导线1的截面图。在截面图中,铜线2在截面图中间。铜芯2被涂层3包围。铜芯的表面15位于铜线2的界限上。在通过导线1的中心23的线L上,铜芯2的直径被示为线L与表面15的交叉点之间的端至端距离。导线1的直径是通过中心23的线L和导线1的外界的交叉点之间的端到端距离。此外,描述了涂层3的厚度。
在图3中,描述了具有铜芯2、中间层7和涂层3的导线1。除针对图2所述的项目之外,示出了中间层7的厚度。
图4示出了根据本发明的工艺。
图5描述了包括两个元件11和导线1的电设备。导线1将两个元件11电连接。
图6描述了另一电设备10。四个元件11被三个导线1电连接。
图7描述了推进设备16,在这种情况下为汽车,其包括电设备10。
在图8中,示出了一块根据本发明的导线的截面图。
在图9中,示出了通过一块根据本发明的导线的纵向切口。
图10描述了导线1的放大。自下至上地示出了在铜芯的两个表面15之间的铜芯2的剖面,后面是中间层7。在中间层7的顶部上的是涂层3。邻近于涂层3的在顶部上的黑色区域是背景且不是示例的一部分。
图11描述了应变单轴循环测试的例证图表。在x轴上,用%示出延长度。在y轴上,示出了应力[MPa]。由实验所得到的曲线是historesis环(loop)。用A标记的曲线是由根据本发明的导线记录的,曲线B是用由纯铝制成的参考导线记录的。如在测试方法中所述地确定Δεpl和Δw。
图12和图13示出了如针对图11所述的多次测量,收集用于图12中的图表中的耗散功和用于图13中的塑性应变的结果。用圆点标记的值是用根据本发明的导线记录的,用矩形点标记的值是用由纯铝制成的参考导线记录的。
图14示出了收集功率循环测试的结果的图表。在x轴上,示出了作为在循环开始时和在循环停止时的温度之间的差的ΔT。在y轴上示出了直至失败为止的循环数目。在此图表中,示出了用于纯铝的样本的曲线(通过明亮矩形点的曲线拟合)。此外,示出了对于根据本发明的导线的曲线(通过暗矩形点的曲线拟合)。根据图表,到失败的循环数目对于本发明的导线而言是对于纯铝的参考的至少三倍高。
图15示出了导线拉力测试的草图。在结合21中以45°的角19将导线1结合到基板20。拉钩17牵拉导线1。在拉钩17牵拉导线1时形成的角32是90℃。
测试方法
所有测试和测量是在T=20℃和50 %的相对湿度下进行的。
电导率
测试样品(即长度为1.0 m的导线)的两端被连接到提供I=10 mA的恒定电流的功率源。用测量电压的设备来记录电压。用至少4个测试样品来重复此布置(set-up)。将四个测量结果的算术平均用于下面给出的计算。
根据R=U/I来计算电阻R。
根据ρ = (R×A) / 1来计算比电阻ρ,其中,A是导线的平均截面面积且1是用于测量电压的设备的两个测量点之间的导线的长度。
根据σ = 1 / ρ来计算比电导率σ。
层厚度
为了确定涂层的厚度、中间层的厚度和芯的直径,垂直于导线的最大延长来切割导线。仔细地研磨切口并进行抛光以避免软材料(例如Al)的涂抹。通过光学显微镜或扫描电子显微镜(SEM)来记录图片,其中,将放大选择成使得示出导线的整个截面。
重复此程序至少15次。将所有值提供为至少15次测量结果的算术平均。
楔-楔结合—参数定义
在20℃下执行导线到用AlSi1(从Heraeus/德国可获得)镀敷的CuSn6制成的基板的结合,其中,将该结合应用于AlSi1表面。在以导线与基板之间的45°角形成第一楔结合之后,用导线的第二端将其楔入到基板。导线的两端之间的结合的距离在从5至20 mm范围内。此距离被选择成以便确保导线与基板之间的45°的角。在楔结合期间,将在60—120 kHz范围内的频率的超声应用于结合工具达40至500毫秒。
然后,如上所述地将由铝AL-H11 CR制成的标准导线的参考样本楔结合。通过确定基板上的导线的接触面积(Ac ref)来评估结合导线的变形程度。
关于使用根据本发明的导线制成的要测试样本,楔结合参数(即外加力、频率和暴露到超声的时间)必须适于在基板上实现根据本发明的导线的接触面积(Ac inv),其中,Ac ref等于Ac inv。关于具有包含铝的涂层的铜线,必须增加施加的能量,即必须增加如下参数中的一个:外加力、超声频率和暴露到超声的时间。
导线拉力
在XYZTEC Condor 150机器上根据MIL-STD-883G方法2011.7(1989)、条件D来进行导线拉力测试。以45°角将导线结合到用AlSi1(从Heraeus/德国可获得)镀敷的CuSn6制成的铝基板上,其中,将该结合应用于AlSi1表面。导线的两端之间的结合的距离在从5至20 mm范围内。此距离被选择成以便确保导线与基板之间的45°的角。以2500μm/s的牵拉速度在环的中间牵拉环。拉钩的直径是导线直径的至少两倍。
导线结合剪切力测试
在XYZTEC Condor 150机器上根据AEC-Q101-103 Rev-A(07.2005)来进行导线结合剪切力测试。以45°角将导线结合到用AlSi1(从Heraeus/德国可获得)镀敷的CuSn6制成的铝基板,其中,将该结合应用于AlSi1表面。然后,以50 μm/s的速度将剪切工具下降至基板以限定零高度。接下来,将剪切工具从基板缩回至结合导线的直径的10%的距离。然后,以250 μm/s的速率进行剪切。还记录结合剪切失败模式:(1)结合提升;(2)结合剪切;(3)磨顶槽;(4)结合表面提升(结合表面与其底层基板分离)。
应变和耗散功—单轴循环测试
笔直导线的样本被夹在机器中以施加机械应变(张紧和压缩)。被暴露于机械测试的导线的长度是1.0 mm。以1%/s的应变率执行样本的循环直至样本失败(导线破损)。机器记录由样本传输的力。针对直至失败为止的循环数目(N)对塑性应变振幅(Δεpl)和耗散功(Δw)每个进行绘图。
Δεpl被定义为hysteresis环的增加和减小分支的零应力处的应变差。
Δw被定义为一个hysteresis环的积分。
功率循环测试
通过使用要测试导线将二极管EMCON 4高功率芯片(从德国慕尼黑INFINEON技术公司可获得)楔结合到底板来产生样本。如上所述,以适当的方式来选择楔结合参数,确保所有被结合导线在导线与底板之间示出相同的接触面积(Ac ref)。关于商售底板,选择在测试期间将保持管芯被附着(二极管)的底板。使用相同的底板来准备所有样本。
在由美国AZ85281的坦佩的Integrated Technology公司供应的ITC5230上进行功率循环测试。为了进行测试,将样本安装在冷却垫上,通过该冷却垫,在冷却垫的进口处使用具有温度20℃的流体以恒定流速率将样本永久地冷却。为了确保定义的热传递被样本耗散,在样本与冷却垫之间布置热传导膜。使ITC5230的电极接触二极管和底板。
结合之后的电缺陷
针对电缺陷评估根据上述楔-楔结合程序在相同条件下完成的一组150个样本。样本中的每个具有9个结合,其总计达1350个结合。取决于缺陷的数目,在表2中用++、+、0、-或—来标记每个组。
++ = 0
+ = < 2 %
0 = 2–5 %
- = 5–10 %
-- = > 10 %。
在功率循环测试之前,评估预置电压(V0)和时间下的电流量(I0),这是实现样本从40℃的起始温度到175℃的温度的增加所必需的。此时间是循环的接通时间。在其之后,在不向样本施加电流的同时评估样本从175℃冷却至40℃的冷却时间。此时间是关断时间。一个接通时间、后面是一个关断时间的序列定义一个功率循环。
然后,通过连续地施加上述功率循环来执行功率循环测试。在预置电流I0下,记录在功率循环的接通时间期间的电压(Vt)。当接通时间段期间的电压Vt超过电压Vf时,功率循环测试结束。Vf = (V0 + 10 %)。
示例
由示例来进一步举例说明本发明。这些示例用于本发明的示例性阐明且并不意图以任何方式限制本发明或权利要求的范围。
示例1—15
使用22个拉伸模来将具有115μm厚度的铝涂层和770μm铜芯直径的总直径1mm导线的导线延长,每个提供12%的延长度以获得在示例2、表1中详述的导线直径的导线。然后,将延长的导线放在辊子上并在表1中详述的退火温度T下在烘箱中退火达1小时。在退火之后,在24小时内将导线冷却至环境温度。下面在表1中收集了这些导线的性质和导线处理的处理参数,在表2中收集了实验数据。使用具有如表1中所示的Cu直径和总导线直径的导线来准备示例1、3—15。
参考数字
(1)导线
(2)铜芯
(3)涂层
(4)接触
(5)截面图中的通过导线的最长路径
(6)截面图中的通过导线的最短路径
(7)中间层
(8)铜线
(9)导线前体
(10)电设备
(11)元件
(12)电子设备
(13)受控设备
(14)控制单元
(15)铜芯表面
(16)推进设备
(17)拉钩
(18)牵拉拉钩的方向
(19)导线与表面之间的角
(20)基板
(21)导线与基板之间的结合
(22)牵拉导线的拉钩下的导线角度
(23)导线中心
(L)线
Claims (21)
1.一种导线(1),包括:
a. 具有表面(15)的铜芯(2);以及
b. 涂层(3),叠加在铜芯(2)的表面(15)上,
其中,涂层(3)包括铝,
其中,涂层(3)的厚度与铜芯(2)的直径的比在从0.05至0.2范围内,
其中,铜芯(2)的直径的标准偏差与铜芯(2)的直径的比在从0.005至0.05的范围内,以及
其中,涂层(3)的厚度的标准偏差与涂层(3)的厚度的比在从0.05至0.4范围内,
其中,所述导线具有在从100μm至600μm范围内的直径。
2.根据权利要求1所述的结合(1)导线,其中,中间层(7)被布置在铜芯(2)与涂层(3)之间,其中,中间层(7)包括至少一个金属间相,其包括芯的材料和涂层的材料。
3.根据权利要求2所述的导线(1),其中,中间层(7)具有在从0.1至5μm范围内的厚度。
4.根据权利要求1至3中的任一项所述的导线(1),其中,导线(1)的芯(2)的直径在从70至500 μm范围内,在导线(1)的截面图中确定。
5.根据权利要求1或4所述的导线(1),其中,涂层(3)的厚度在从10至60μm范围内,在导线(1)的截面图中确定。
6.根据权利要求1至5中的任一项所述的导线(1),其中,基于铜芯的总重量,所述铜芯包括按重量计至少95 %的至少99.9%纯度的铜。
7.根据权利要求1至6中的任一项所述的导线(1),其中,基于涂层的总重量,所述涂层包括按重量计至少80 %的99.9%纯度的铝。
8.根据权利要求1至7中的任一项所述的导线(1),其中,耗散功对于导线(1)而言是由纯Al制成的参考导线的耗散功的至少2倍高。
9.根据权利要求1至8中的任一项所述的导线(1),其中,单轴循环测试中的最大应变对于导线(1)而言是由纯Al制成的参考导线的最大应变的至少1.5倍高。
10.根据权利要求1至9中的任一项所述的导线(1),其中,功率循环测试对于导线(1)而言是对于由纯Al制成的参考导线的至少3倍高。
11.根据权利要求1至10中的任一项所述的导线(1),其中,导线(1)的导线拉力对于导线(1)而言比对于由纯Al制成的参考导线高至少10%。
12.一种用于制造导线(1)的工艺,至少包括以下步骤:
a. 提供导线前体(9),其包括具有表面(15)的铜芯(2)和涂层(3),该涂层(3)被叠加在铜芯(2)的表面(15)上,其中,涂层(3)包括铝,
其中,涂层(3)的厚度与铜芯(2)的直径的比在从0.05至0.2的范围内,
其中,铜芯(2)的直径的标准偏差与铜芯(2)的直径的比在从0.005至0.05的范围内,以及
其中,涂层(3)的厚度的标准偏差与涂层(3)的厚度的比在从0.05至0.4的范围内,
其中,所述导线前体(9)具有在从0.5至5mm范围内的直径,
b. 对导线前体(9)进行成形,
c. 对导线前体(9)进行退火,
由此,获得导线(1),其中,导线(1)具有在从100μm至600μm范围内的直径。
13.根据权利要求12所述的工艺,其中,在步骤c中形成中间层(7)。
14.根据权利要求12或13所述的工艺,其中,在从140℃至400℃范围内的温度下、优选地在从30分钟至5小时的时段内执行退火。
15.一种通过根据权利要求12至14中的任一项所述的工艺可获得的导线(1)。
16.根据权利要求15所述的导线(1),其中,所述导线(1)的特征在于以下特征中的至少一个:
a. 耗散功对于导线(1)而言是由纯Al制成的参考导线的耗散功的至少2倍高;
b. 单轴循环测试中的最大应变对于导线(1)而言是由纯Al制成的参考导线的最大应变的至少2倍高;
c. 功率循环测试对于导线(1)而言是对于由纯Al制成的参考导线的至少3倍高;
d. 导线(1)的导线拉力对于导线(1)而言比对于由纯Al制成的参考导线高至少10%;
e. 导线(1)的电导率比由纯Al制成的参考导线的电导率高出从20%至55%范围内。
17.一种包括至少两个元件(11)和至少根据权利要求1至11或权利要求15和16中的任一项所述的导线(1)或至少根据权利要求12至14中的任一项所述的工艺制造的导线(1)的电设备(10),其中导线(1)将两个元件(11)电连接。
18.权利要求17的电设备(10),其中,通过楔结合可获得电连接。
19.权利要求17或18中的任一项所述的电设备(10),其中,元件(11)中的至少一个选自由基板、集成电路、IGBT、晶体管、诸如发光二极管或光电二极管之类的二极管组成的组。
20.一种包括至少一个根据权利要求17至19中的任一项所述的电设备(10)的推进设备(12)。
21.一种来自制作电设备(10)的工艺,包括如下步骤:
a. 提供至少两个元件(10);
b. 通过根据权利要求1至11或权利要求15和16中的任一项的导线(1)或至少根据根据权利要求12至14中的任一项所述的工艺制造的导线(1)来连接两个元件(10),其中,通过楔结合来执行所述连接中的至少一个。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP12003604.1A EP2662890B1 (en) | 2012-05-07 | 2012-05-07 | Method for making an aluminium coated copper bond wire |
EP12003604.1 | 2012-05-07 | ||
PCT/EP2013/059520 WO2013167609A1 (en) | 2012-05-07 | 2013-05-07 | Aluminium coated copper bond wire and method of making the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104272455A true CN104272455A (zh) | 2015-01-07 |
CN104272455B CN104272455B (zh) | 2018-09-21 |
Family
ID=48430743
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380023792.8A Active CN104272455B (zh) | 2012-05-07 | 2013-05-07 | 镀铝铜结合导线及制作其的方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US9966355B2 (zh) |
EP (1) | EP2662890B1 (zh) |
JP (1) | JP6184477B2 (zh) |
KR (1) | KR20150011826A (zh) |
CN (1) | CN104272455B (zh) |
DK (1) | DK2662890T3 (zh) |
PH (1) | PH12014502393A1 (zh) |
SG (1) | SG11201406479QA (zh) |
WO (1) | WO2013167609A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105355616A (zh) * | 2015-11-20 | 2016-02-24 | 广东梅雁吉祥实业投资股份有限公司 | 一种抗氧化金属制品 |
CN113981270A (zh) * | 2021-10-26 | 2022-01-28 | 江西云泰铜业有限公司 | 一种耐高温铜线的制备方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2662889A1 (en) * | 2012-05-07 | 2013-11-13 | Heraeus Materials Technology GmbH & Co. KG | Aluminium coated copper ribbon |
CN104064252A (zh) * | 2014-06-13 | 2014-09-24 | 安徽省宁国天成电工有限公司 | 一种镀铝铜线 |
US20170200534A1 (en) * | 2014-07-11 | 2017-07-13 | Heraeus Deutschland GmbH & Co. KG | Process for manufacturing of a thick copper wire for bonding applications |
CN105934803B (zh) * | 2016-04-29 | 2018-02-02 | 深圳顺络电子股份有限公司 | 复合导线及其制备方法和一种功率电感的制备方法 |
US10658326B2 (en) * | 2016-07-20 | 2020-05-19 | Samsung Electronics Co., Ltd. | Bonding wire having a silver alloy core, wire bonding method using the bonding wire, and electrical connection part of semiconductor device using the bonding wire |
JP7293674B2 (ja) * | 2019-01-31 | 2023-06-20 | 株式会社プロテリアル | ボンディングワイヤ |
US11532580B2 (en) * | 2019-08-29 | 2022-12-20 | Taiwan Semiconductor Manufacturing Company Ltd. | Interconnect structure, semiconductor structure including interconnect structure and method for forming the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040014266A1 (en) * | 2000-09-18 | 2004-01-22 | Tomohiro Uno | Bonding wire for semiconductor and method of manufacturing the bonding wire |
CN1575512A (zh) * | 2001-10-23 | 2005-02-02 | 住友电工运泰克株式会社 | 键合线 |
US20070284415A1 (en) * | 2006-05-17 | 2007-12-13 | Infineon Technologies Ag | Semiconductor having a bonding wire and process |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6442138A (en) * | 1987-08-07 | 1989-02-14 | Mitsubishi Electric Corp | Manufacture of bonding wire for semiconductor element |
JP2000031194A (ja) * | 1998-07-10 | 2000-01-28 | Fuji Electric Co Ltd | ボンディングワイヤおよび半導体装置 |
US7935885B2 (en) * | 2008-07-11 | 2011-05-03 | Ford Global Technologies, Llc | Insulated assembly of insulated electric conductors |
-
2012
- 2012-05-07 EP EP12003604.1A patent/EP2662890B1/en active Active
- 2012-05-07 DK DK12003604.1T patent/DK2662890T3/da active
-
2013
- 2013-05-07 WO PCT/EP2013/059520 patent/WO2013167609A1/en active Application Filing
- 2013-05-07 JP JP2015510798A patent/JP6184477B2/ja active Active
- 2013-05-07 US US14/399,351 patent/US9966355B2/en active Active
- 2013-05-07 SG SG11201406479QA patent/SG11201406479QA/en unknown
- 2013-05-07 CN CN201380023792.8A patent/CN104272455B/zh active Active
- 2013-05-07 KR KR1020147034473A patent/KR20150011826A/ko not_active Application Discontinuation
-
2014
- 2014-10-24 PH PH12014502393A patent/PH12014502393A1/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040014266A1 (en) * | 2000-09-18 | 2004-01-22 | Tomohiro Uno | Bonding wire for semiconductor and method of manufacturing the bonding wire |
CN1575512A (zh) * | 2001-10-23 | 2005-02-02 | 住友电工运泰克株式会社 | 键合线 |
US20070284415A1 (en) * | 2006-05-17 | 2007-12-13 | Infineon Technologies Ag | Semiconductor having a bonding wire and process |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105355616A (zh) * | 2015-11-20 | 2016-02-24 | 广东梅雁吉祥实业投资股份有限公司 | 一种抗氧化金属制品 |
CN105355616B (zh) * | 2015-11-20 | 2017-12-19 | 广东梅雁吉祥实业投资股份有限公司 | 一种抗氧化金属制品 |
CN113981270A (zh) * | 2021-10-26 | 2022-01-28 | 江西云泰铜业有限公司 | 一种耐高温铜线的制备方法 |
CN113981270B (zh) * | 2021-10-26 | 2022-07-12 | 江西云泰铜业有限公司 | 一种耐高温铜线的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6184477B2 (ja) | 2017-08-23 |
DK2662890T3 (da) | 2019-08-26 |
WO2013167609A1 (en) | 2013-11-14 |
EP2662890B1 (en) | 2019-07-03 |
JP2015519746A (ja) | 2015-07-09 |
SG11201406479QA (en) | 2014-11-27 |
KR20150011826A (ko) | 2015-02-02 |
US9966355B2 (en) | 2018-05-08 |
PH12014502393A1 (en) | 2014-12-22 |
US20150155252A1 (en) | 2015-06-04 |
CN104272455B (zh) | 2018-09-21 |
EP2662890A1 (en) | 2013-11-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104272455A (zh) | 镀铝铜结合导线及制作其的方法 | |
US10485112B2 (en) | Ceramic circuit substrate and method for producing ceramic circuit substrate | |
CN104272456A (zh) | 镀铝铜结合导线及制作其的方法 | |
JP6100501B2 (ja) | セラミック回路基板および製造方法 | |
JP4932974B2 (ja) | 金属テープ材料、及び太陽電池集電用インターコネクター | |
CN105393352B (zh) | 铜接合导线以及其制造方法 | |
TWI744220B (zh) | 用於接合應用的經塗佈銅(Cu)線 | |
TW201809299A (zh) | 用於功率模組封裝之金屬帶材 | |
CN104285287A (zh) | 镀铝铜条带 | |
CN115803856A (zh) | 半导体装置用接合线 | |
JP5376356B2 (ja) | 電子素子の実装方法および該実装方法によって実装された電子部品 | |
TW201637153A (zh) | 散熱基板 | |
Hsu et al. | Study of tensile properties, electrothermal characteristics and packaging reliability on Cu–Pt–Au–Pd fine micro-alloyed wire | |
JP2014147966A (ja) | 接合材料、接合方法、接合構造、および半導体装置 | |
TW202409305A (zh) | 半導體裝置用接合導線 | |
CN114729440A (zh) | 复合基板及其制造方法、以及电路基板及其制造方法 | |
Chen | Innovative Solid-State Bonding Designs and Techniques for High Power Electronic and Laser Diode Packaging | |
朴世珉 | High-temperature reliability of ultrasonic |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |