CN104272429A - Reactive sputtering process - Google Patents

Reactive sputtering process Download PDF

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CN104272429A
CN104272429A CN201280069085.8A CN201280069085A CN104272429A CN 104272429 A CN104272429 A CN 104272429A CN 201280069085 A CN201280069085 A CN 201280069085A CN 104272429 A CN104272429 A CN 104272429A
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pulse
target
target surface
voltage
intermediateness
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CN104272429B (en
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S·克拉斯尼策尔
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Oerlikon Surface Solutions AG Pfaeffikon
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Oerlikon Trading AG Truebbach
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0094—Reactive sputtering in transition mode
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3476—Testing and control
    • H01J37/3485—Means for avoiding target poisoning
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

The invention relates to a method for reactive sputtering in which, by means of ion bombardment, material is ejected from the surface of a first target and undergoes transition to the gas phase, wherein negative voltage is applied pulsewise to the target in such a way that an electric current having a current density of greater than 0.5A/cm2 occurs at the target surface, such that the material undergoing transition to the gas phase is at least partly ionized, and in which a reactive gas flow is established and reactive gas reacts with the material of the target surface, characterized in that the duration of a voltage pulse is chosen such that, during the voltage pulse, the target surface, at the location or locations at which the current flows, most of the time is covered at least partly with a compound composed of reactive gas and target material and, consequently, the target surface is in a first intermediate state, and this covering is smaller at the end of the voltage pulse than at the start of the voltage pulse and, consequently, the target surface is in a second intermediate state at the end of the voltage pulse.

Description

Reactive sputtering process
The present invention relates to a kind of method for reactive sputtering.Also referred to as in the sputtering of cathodic sputtering, by Ions Bombardment, material departs from from the surface of the solid (target) forming negative electrode and is transitioned into gas phase.Negative potential is applied, to accelerate towards it to provided ion to negative electrode.Sputtering is through being usually used in backing coating.Substrate arranges or walks around on its side near target.From negative electrode depart from (=sputtering) then material deposition (absetzen) of gas form on substrate.That is, relate to the segregation (Abscheidung) from gas phase in this case and belong to the coating process being called PVD (=physical vapor deposition (physical vapour deposition (PVD))).For making the material of sputtering arrive substrate by other particle bombardment uninterruptedly that is not to a great extent, only allow to there is little surrounding environment air pressure.Average free path length should be at least the same large to the distance of substrate with negative electrode.Therefore in transpirable process chamber, splash coating is carried out.Typical disposal pressure is positioned at 5*10 -3millibar or less.
For producing the ion that bombarding cathode needs, in process chamber, load the working gas of inertia.Argon gas is used as working gas very frequently.By bombarding ion, the atom of working gas is ionized.When bombarding ion, make its ionization together with free electron hits with atom substantially.Produce a kind of plasma by this way, be attracted out from intermediate ion from negative electrode.Therefore, high electron density is favourable to this process.When so-called magnetron sputtering, after negative electrode, arrange magnetic system, its magnetic field reaches in the region on target surface.This part of stretching out (it often realizes as tunnel and often takes the form of runway (racetrack) when rectangular cathode) in magnetic field forces electronics to enter in spiral channel.Improve the bombardment number of each electronics by compulsory path lengthens thus and improve the Ionization Efficiency of working gas atom.
Due to the negative voltage applied on negative electrode, accelerate towards negative electrode to working gas ion.Therefore, during sputtering, current flowing occurs, this current flowing must be kept by the generator of superior performance.In the sputtering method of routine, very little from the degree of ionization of the material of target disengaging.If but with being greater than 0.5A/cm 2current density operation, then degree of ionization sharply raises.This ionization of institute's sputter material advantageously can use when building layer.But input by energy great in the high current density generation target on target and cause the heating to it thus.Due to this reason, only use pulsed operation when such current density, cool to the target time.This method is called high-power pulsed magnetron sputtering (high-power impulse magnetron sputtering, HiPIMS).
Due to electric current that is required, that flow through target surface in the process, this sputtering method is confined to electric conducting material.But can load reacting gas in process chamber during sputtering, so reacting gas and institute sputter material form compound.But, generation rate reduction sharply from specific reacting gas stream.This rate reduction characterizes: target surface as reacting gas and target material reaction result and be covered with nonconducting or conduct electricity the layer differed from.People are referred to as poisoning target in this case.Thus so-called metallic state only can also re-establish by means of the supply of sharply withdrawn reaction gas.
The shortest pulse duration (70 μ s) that Fig. 1 discharges for HiPIMS illustrates that the typical case of the example of the optical signalling for Al and chromium is delayed.In this case, pulse power is 500W/cm 2and time average power is 2.5kW.Solid line describes the optical signalling being used for chromium (520nm), and dotted line describes the optical signalling being used for aluminium (396nm).Line above and the Oxygen Flow of rising contact, and line below and the Oxygen Flow of decline contact.Obviously, from critical Oxygen Flow, see that speed declines.Speed in this case in poison mode drops to very little value, is that is about one of percentage of metal mode medium-rate.In poison mode, target surface is oxidized.By means of only the recalling sharply of Oxygen Flow, target surface just can return to metallic state.
Carried out various trial, so delayed to avoid.In WO 03/006703, the people such as Nyberg advises a kind of method for reactive sputtering, and the method produces high current density by spatially limiting plasma runway on sputtering target.Thus, plasma is limited on the zonule on target surface.The people such as Nyberg illustrate, importantly this region mobile, slower in being enough to ensure mostly to sputter under metal mode, but near being enough to avoid target melt surface.
On the other hand, the people such as Wallin illustrate a kind of HiPIMS method in WO 2009/010330, use the pulsed operation of pulse length between 2 μ s and 200 μ s accordingly.In this case with the voltage power supply between 200V and 2000V.With more than 200Wcm -2power density operation.Corresponding output pulses is provided by generator, and described generator comprises pulse unit.Trigger magnetron sputtering glow discharge (it has the electric current risen towards maximum) at each impulse duration thus, realize the maximum of output pulses thus.Do not occur between two pulses in succession to the electrical power supply in coat system.Apply the Oxygen Flow between 200sccm and 2000sccm.Illustrated by the people such as Wallin, obtain following reaction condition thus on the substrate wanting coating, wherein target is in metallic state substantially simultaneously, and that is target surface does not cover with reacting gas significantly.
That is, not only the people such as people but also Wallin such as Nyberg selection course parameter all like this, makes to sputter from target under metal mode.The present invention tries a different way.It illustrates a kind of method, and it is greater than 0.5A/cm for combining 2high current density (HiPIMS) drive sputtering discharge.From output pulses time be in the target of the first intermediateness between toxic state and metallic state, in process according to the present invention, so in conjunction with the Sputtering power density that pulse length is selected current density or obtained like this, make second intermediateness of reactive sputtering process at the end of output pulses between toxic state and metallic state, wherein the second intermediateness has than the significant metallic character of the first intermediateness.In this case, the first intermediateness also can be definitely poisoning state and the second intermediateness also can be metallic state.But preferably, the first intermediateness significantly not corresponding to definitely poisoning state and/or the second intermediateness significantly not corresponding to metallic state substantially.Here importantly, unlike the prior art, not most target sputtering from being in metallic state, but make state drive towards metallic state at impulse duration from toxic state more or less according to the present invention by the energy pulse applying regulation.Be supported in the high current density existed at target place in HiPIMS process thus on the one hand, and pulse must be long enough on the other hand, to make target effectively be detoxified at least partly.So pulse is chosen to so long or short idle hours, make the poisoning corresponding to the first intermediateness of target.By next pulse, then target detoxifies until the second intermediateness again.Pulse duration of the present invention is between 50 μ s and 100ms.But make the actual effect of this process stabilization that about 500 more than μ s occur.Therefore, the preferred pulse duration of the present invention, between 500 μ s and 100ms, particularly wherein preferably is, and the pulse duration is between 1ms and 10ms, and further preferably, the pulse duration is between 1ms and 5ms.
As mentioned above, the energy pulse specified is applied according to the present invention.It such as can realize in the following way: do not interrupt between two pulses followed one another to the power supply in coat system on target on the contrary with above-mentioned prior art, but apply power one by one to multiple target, make substantially do not interrupt in multiple pulse train to the power stage in coat system and perform consistently.Because there is not the interruption of power stage during these pulse trains, so it is interval also not need other power to build.Can use simple DC generator, it exports its power to coat system consistently in multiple pulse.As a result, regulation can be realized on each target to be perfectly clear and reproducible output pulses.This method such as explanation in the WO 2012/143091 of the applicant that the output pulses of order is provided.The theme of WO 2012/143091 is by referring to being incorporated in this specification.
As the result of method of the present invention, obtain a kind of sputtering discharge about reaction gas pressure, there is no delayed highly stable process and high coating speed.This is particularly suitable when oxide sputter procedure, such as manufacture aluminium oxide.Another advantage of this method is the high current density of sputtering discharge of the present invention, and it improves the ionization of institute's sputtering particle.
Now in detail and exemplarily explain the present invention further with reference to the accompanying drawings.
Fig. 1 illustrates that a kind of typical case according to prior art is delayed.
Fig. 2 illustrates the screenshot capture of output pulses of the present invention on sputter cathode.
Fig. 3 illustrates and use rate reduction under long HiPIMS pulse situation in course of reaction oxygen being used as reacting gas.
Fig. 4 illustrates the curve of optical signalling for the coating procedure of 5 hours.
Fig. 5 a to 5d illustrates the curve of different operating point place voltage and current pulses.
Fig. 6 is the diagram of the possibility regulating reactive sputtering process according to magnitude of voltage.
Shown in Fig. 2 is of the present invention, on sputter cathode output pulses.In this example embodiment, use AlCr (70: 30) target as target material and keep the Oxygen Flow of 40sccm.This illustrates discharge voltage and reacts very sensitively the poisoning of sub-surface that hit of sputtering runway.
-when output pulses starts, voltage level is U1=400V.This associates with poisoning (oxidized in this example embodiment) target.
-constant be 500W/cm 2output pulses at the end of, the state relation of the partial oxidation on voltage level U 2=680V and target surface.
Therefrom can reach a conclusion: corresponding to the target surface portion of plasma runway during the pulse duration from the outset oxidized to partial oxidation or the intermediateness transition of metal.
If use long HiPIMS pulse, such as, 5ms again in the pulse power situation of 500W, then illustrate the speed continuous decrease (see Fig. 3) when reacting gas stream (such as oxygen) increases.Surprisingly speed decline is dull and delayed behavior does not occur.This opens the possibility that a kind of method of the present invention adjusts arbitrarily working point in a kind of state of target.
Method of the present invention is proved to be exceptional stability.For demonstration this point, kept coating procedure with above-mentioned parameter at 5 hours, wherein select different Oxygen Flow at this time durations and thus select working point.Assuming that from a metal level, then be the different segmentations with different Oxygen Flow.Fig. 4 illustrate HiPIMS plasma emission according to the line of departure of aluminium and chromium, the curve of the optical signalling that depends on the time.Can obviously find out, coating procedure very stably runs at All Time.
In order to supplement, Fig. 5 illustrates shown different operating point place's potential pulse of chart and the curve of current impulse in the diagram.In fig 5 a, these curves illustrate in this room situation when not loading reacting gas.Realize pure metal mode.Voltage keeps relative constancy.Electric current is suitable for too.In figure 5b, the reacting gas stream of 50sccm is preponderated.Discharge voltage starts at 380V place and terminates at 560V place.Therefore, the metallic state on target surface does not reach completely.In fig. 5 c, first the reacting gas stream of 45sccm is preponderated, and then the reacting gas stream of 40sccm is preponderated.Discharge voltage during end-of-pulsing is elevated to 580V now, is the value provided by metal surface, but reaches not yet.In figure 5d, finally there is the reacting gas stream of 30sccm.When this reacting gas stream, discharge voltage start time be 400V and at end-of-pulsing time it is 700V, that is for the end of pulse, perhaps substantially reach the metallic state on target surface.In this case it is apparent that along with the increase of target surface oxidation, the initial value of the discharge voltage of output pulses reduces.Ensured by the duration of highpowerpulse: target is again taked at the state be oxidized in the transitional region between metal or metallic state at the end of output pulses, this is because be in low initial value place when target surface complete oxidation voltage constant.But in contrast to the prior art, exactly do not occur in impulse duration mostly from the situation of the target surface sputtering of metal.
In addition, method of the present invention is opened a kind of novelty for course of reaction, is the possibility of adjustment of the present invention equally.
According to hitherto known prior art, that is by the transmitting of optics or by keeping constant sputtering voltage to regulate.For two kinds of methods, stably can work in the transitional region of course of reaction.Particularly, voltage-regulation is generally simple, stable and highstrung operation.
Such as aluminium oxide or AlCrO xthe discharge voltage on target surface of oxidation in the scope of 300V to 400V.This voltage is corresponding higher when partial oxidation, and this voltage is approximately 600V to 800V when metal sputtering.According to the present invention, have in the method for the power stage of substantial constant during output pulses a kind of, this can be advantageously used in adjustment course of reaction.That is, according to the present invention, this process can regulate by the end value of the initial value of the voltage of output pulses and voltage.That is, the relevant voltage value at the end of magnitude of voltage when reactive sputtering process starts according to HiPIMS output pulses and this output pulses regulates.This schematically shows in Figure 5.
Therefore, according to the present invention, pulse power and the pulse duration of reaction HiPIMS sputtering method can be selected like this, make to produce when pulse starts specifically compared with the target state of Strong oxdiative, produce specific at least compared with the target state of weak oxide when end-of-pulsing, wherein, this can see in voltage curve.
Should also be noted that as the reacting gas for method of the present invention, such as, consider oxygen, nitrogen, C2H2, CH4 and their mixture.
Like this, when using oxygen to carry out sputtering of the present invention, such as, nitrogen can be provided as the second reacting gas.
When using nitrogen to carry out sputtering of the present invention, such as, C2H2 or CH4 can be provided as the second reacting gas.
Disclose a kind of method for reactive sputtering, wherein material departs from by the surface of Ions Bombardment from the first target and is transitioned into gas phase, wherein on target, so applies negative voltage in a pulsed fashion, makes, on target surface, current density occurs and is greater than 0.5A/cm 2electric current so that at least part of ionization of the material being transitioned into gas phase, and wherein build reacting gas stream and the material on reacting gas and target surface and react.In this case, the duration of potential pulse is so selected, target surface during potential pulse was covered with the compound be made up of reacting gas and target material at least in part in one or more position most of the time of current flowing, and therefore target surface is in the first intermediateness, and this cover potential pulse at the end of be less than potential pulse when starting, therefore target surface is in the second intermediateness at the end of potential pulse.
The output pulses produced by voltage and current at least preferably can be remained in substantially invariable power amplitude in whole pulse duration in the most of the time of this pulse substantially.
Pulse duration can between 500 μ s and 100ms, preferably between 1ms and 10ms, between 1ms and 5ms.
One or more break periods between the first pulse and pulse below can so be selected, make can react so on a large scale in this time reaction gases and target surface, make when next pulse starts target surface about cover be in start with the first pulse time substantially identical intermediateness.Pulse below can be directly with pulse after the first pulse, that is, makes there is not other pulse between them.
At least one second target can be used, and can sequentially from the first target to the second target and if desired sequentially to the input of other target connection power in order to apply voltage in a pulsed fashion, make to provide the power stage of the generator of power not to be interrupted during at least one such sequence, described generator is preferably DC generator.
So can regulating reactive sputtering method, making the final voltage pulse when reaching the prespecified voltage corresponding with second intermediateness on target surface.
This adjustment can be carried out like this, when being namely no more than prespecified voltage when pulse starts, select break period shorter than previous break period, and when exceeding prespecified voltage when pulse starts, select break period longer than previous break period.
Second intermediateness can be the metallic state on target surface substantially or not be metallic state.
Above-mentioned sputtering method is preferred for backing coating.But, due to high ion concentration, also can apply in other method, such as sputter etching, surface cleaning or ion implantation.

Claims (9)

1. the method for reactive sputtering, wherein by Ions Bombardment, material departs from from the surface of the first target and is transitioned into gas phase, wherein on described target, so applies negative voltage in a pulsed fashion, make target on the surface generation current density be greater than 0.5A/cm 2electric current, the material being transitioned into gas phase is ionized at least partly and wherein builds reacting gas stream, and the material on reacting gas and target surface reacts, it is characterized in that, the duration of selection potential pulse like this, target surface during described potential pulse was covered with the compound be made up of reacting gas and target material at least in part in one or more position most of the time of current flowing, and therefore target surface is in the first intermediateness, and this cover potential pulse at the end of be less than potential pulse when starting, and therefore target surface is in the second intermediateness at the end of potential pulse.
2. method according to claim 1, is characterized in that, the output pulses produced by voltage and current is at least preferably remained in substantially invariable power amplitude in whole pulse duration substantially in the most of the time of this pulse.
3., according to the method one of the claims Suo Shu, it is characterized in that, the pulse duration between 500 μ s and 100ms, preferably between 1ms and 10ms, between 1ms and 5ms.
4. according to the method one of the claims Suo Shu, it is characterized in that, one or more break periods between the first pulse and pulse below are so selected, described reacting gas and target surface within this time can be reacted so on a large scale, make when next pulse starts target surface about cover be in start with the first pulse time substantially the same intermediateness.
5. method according to claim 4, is characterized in that, described pulse is below directly with pulse after the first pulse, that is, there is not other pulse between them.
6. according to the method one of the claims Suo Shu, it is characterized in that, use at least one second target and in order to apply in a pulsed fashion voltage and sequentially from the first target to the second target and if desired sequentially to other target connect power input, make to provide the power stage of the generator of power not to be interrupted during at least one such sequence, described generator is preferably DC generator.
7. for regulating the method according to the reactive sputtering method one of the claims Suo Shu, it is characterized in that, the final voltage pulse when reaching the prespecified voltage corresponding with second intermediateness on target surface.
8. for regulating the method according to the reactive sputtering method one of the claims Suo Shu, it is characterized in that, when being no more than prespecified voltage, when pulse starts, break period is selected shorter than previous break period, and when exceeding prespecified voltage, when pulse starts, break period is selected longer than previous break period.
9. according to the method one of the claims Suo Shu, it is characterized in that, the second intermediateness is the metallic state on target surface substantially or is not metallic state.
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