CN104244559A - Plasma source device - Google Patents
Plasma source device Download PDFInfo
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- CN104244559A CN104244559A CN201410444054.7A CN201410444054A CN104244559A CN 104244559 A CN104244559 A CN 104244559A CN 201410444054 A CN201410444054 A CN 201410444054A CN 104244559 A CN104244559 A CN 104244559A
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Abstract
The invention provides a plasma source device. The plasma source device comprises a cavity, a plurality of inductance devices connected in series, a dielectric layer, an alternating current power supply and a matching network, wherein the cavity is used for generating plasma, the inductance devices respectively comprise a magnetic core and a coil wound around the magnetic core and uniformly surround the outer peripheral wall of the cavity, the dielectric layer is located between the cavity and the inductance devices and used for separating the plasma from the coils, and the matching network is arranged between the alternating current power supply and the inductance devices and used for matching the discharge power of the alternating current power supply and the discharge power of the plasma. The plasma source device has the advantages of being low in power, high in density, stable in work, good in uniformity, high in controllability and the like.
Description
Technical field
The present invention relates to technical field of plasma, particularly relate to a kind of plasma source apparatus.
Background technology
Plasma plays important and irreplaceable effect in semiconductor industry, and in the production process of semiconductor product, the technological process of more than 1/3rd all needs to utilize plasma.Along with the increase of chip area, more urgent to the needs of large area plasma source.If utilize traditional inductively-coupled plasma sources to produce large area plasma, need to increase the dielectric layer thickness between coil and vacuum cavity, to bear atmospheric pressure.And the increase of dielectric layer thickness greatly can weaken being coupled between coil with plasma, discharging efficiency is reduced.
Summary of the invention
The present invention is intended to solve one of technical problem in correlation technique at least to a certain extent.
For this reason, the object of the invention is to propose a kind of high density, working stability, plasma source apparatus that uniformity is good.
To achieve these goals, a kind of plasma source apparatus of the embodiment of the present invention, comprising: chamber, and described chamber is for generation of described plasma; Multiple inductance devices of series connection, each inductance device comprises magnetic core and is wound around the coil of described magnetic core, and described multiple inductance device is arranged around the periphery wall of described chamber equably; Dielectric layer, described dielectric layer between described chamber and described inductance device, for described plasma and described inductance loop seclusion are opened; AC power; Matching network, described matching network is arranged between described AC power and described multiple inductance device, for mating the discharge power of described AC power and plasma.
According to the plasma source apparatus of the embodiment of the present invention, distributed equably by multiple inductance device, adjust the distance between multiple coil simultaneously, produce Large-Area-Uniform plasma.Plasma is coupled by induced field with coil, and capacitive coupling is little, can reduce the loss of charged particle on chamber inner wall, reduces the interaction of sputtering and other plasma and cavity inner wall simultaneously.Multiple inductance device is arranged around the periphery wall of chamber equably, plasma is made to constrain near coil, form a kind of plasma source of local, and plasmoid is less by cavity state, there is low-power, high density, working stability, uniformity is good, the advantage that controllability waits by force.
In some instances, described magnetic core is FERRITE CORE.
In some instances, described chamber is vacuum chamber.
In some instances, described chamber is constructed to the structure being suitable for closed magnetic loop formation.
In some instances, described matching network is the transformer of L-type matching network, II type matching network or impedance transformation.
The aspect that the present invention adds and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present invention.
Accompanying drawing explanation
Fig. 1 is the structured flowchart of plasma source apparatus according to an embodiment of the invention;
Fig. 2 is the exemplary plot of the plasma source apparatus of one embodiment of the invention;
Fig. 3 is the position shape schematic diagram of the coil of one embodiment of the invention, chamber, dielectric layer; With
Fig. 4 is the position shape schematic diagram of the coil of another embodiment of the present invention, chamber, dielectric layer.
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Be exemplary below by the embodiment be described with reference to the drawings, be intended to for explaining the present invention, and can not limitation of the present invention be interpreted as.
Fig. 1 is the structured flowchart of plasma source apparatus according to an embodiment of the invention.As shown in Figure 1, the plasma source apparatus of the embodiment of the present invention, comprising: chamber 100, multiple inductance devices 200 of connecting, dielectric layer 300, AC power 400 and matching network 500.
Wherein, chamber 100 is for generation of plasma.Multiple inductance devices 200 of series connection, each inductance device comprises magnetic core and is wound around the coil of magnetic core, and multiple inductance device 200 is arranged around the periphery wall of chamber 100 equably.Dielectric layer 300 is between chamber 100 and inductance device, and for plasma and inductance loop seclusion being opened, ensure chamber 100 vacuum seal, its thickness can be very thin simultaneously.Matching network 500 is arranged between AC power 400 and multiple inductance device 200, for mating the discharge power of AC power 400 and plasma.
Particularly, in one embodiment of the invention, magnetic core is FERRITE CORE.The introducing of FERRITE CORE not only can increase inductance when coil is identical, being coupled between intensifier coil with plasma, by the electric current of coil during reduction work, and when can ensure that inductance is identical, reduce the number of turns of coil, reduce the capacitive coupling of electric discharge, reduce the loss of charged particle on chamber inner wall, and reduce the interaction of sputtering and other plasma and cavity inner wall.
In one embodiment of the invention, described chamber is vacuum chamber.Plasma produces in vacuum chamber.AC power 400 can adopt Switching Power Supply to drive plasma, and more powerful, energy efficiency is higher.
In one embodiment of the invention, matching network 500 can be the transformer of L-type matching network, II type matching network or impedance transformation.Matching network 500, for adjusting the phase place between multiple coil, realizes the control of plasma uniformity, can realize mating between plasma with power supply simultaneously, reduces the power reflection of power supply.
In an example of the plasma source apparatus of the embodiment of the present invention, as shown in Figure 2, by passing into alternating current in the coil in winding FERRITE CORE, alternating current FERRITE CORE and around space in produce the magnetic field of alternation, the magnetic field of alternation is determined rate by farad and is produced electric field (being called induction field) in space, utilizes this electric field to inspire plasma.Utilize the ferritic magnetic core of multiple band, by adjustment space bit shape and phase place, thus produce large-area plasma, plasma operation state is more stable, and controllability is strong.
Further, as shown in the position shape schematic diagram of the coil of the one embodiment of the invention of Fig. 3, chamber, dielectric layer, this shape makes most of induction field be positioned at vacuum chamber, and dielectric layer is very thin, coil and plasmon coupling effect better.
Further, as shown in the position shape schematic diagram of the coil of the another embodiment of the present invention of Fig. 4, chamber, dielectric layer.The coil of multiple band FERRITE CORE, according to the distribution of certain space bit shape, is inserted in vacuum cavity, is kept apart by the plasma in thinner dielectric layer and vacuum chamber.The distribution of these coils, highly, current phase can adjust, to produce large-area homogeneous plasma.
According to the plasma source apparatus of the embodiment of the present invention, distributed equably by multiple inductance device, adjust the distance between multiple coil simultaneously, produce Large-Area-Uniform plasma.Plasma is coupled by induced field with coil, and capacitive coupling is little, can reduce the loss of charged particle on chamber inner wall, reduces the interaction of sputtering and other plasma and cavity inner wall simultaneously.Multiple inductance device is arranged around the periphery wall of chamber equably, plasma is made to constrain near coil, form a kind of plasma source of local, and plasmoid is less by cavity state, there is low-power, high density, working stability, uniformity is good, the advantage that controllability waits by force.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, to the schematic representation of above-mentioned term not must for be identical embodiment or example.And the specific features of description, structure, material or feature can combine in one or more embodiment in office or example in an appropriate manner.In addition, when not conflicting, the feature of the different embodiment described in this specification or example and different embodiment or example can carry out combining and combining by those skilled in the art.
Although illustrate and describe embodiments of the invention above, be understandable that, above-described embodiment is exemplary, can not be interpreted as limitation of the present invention, and those of ordinary skill in the art can change above-described embodiment within the scope of the invention, revises, replace and modification.
Claims (5)
1. a plasma source apparatus, is characterized in that, comprising:
Chamber, described chamber is for generation of described plasma;
Multiple inductance devices of series connection, each inductance device comprises magnetic core and is wound around the coil of described magnetic core, and described multiple inductance device is arranged around the periphery wall of described chamber equably;
Dielectric layer, described dielectric layer between described chamber and described inductance device, for described plasma and described inductance loop seclusion are opened;
AC power;
Matching network, described matching network is arranged between described AC power and described multiple inductance device, for mating the discharge power of described AC power and plasma.
2. plasma source apparatus according to claim 1, is characterized in that, described magnetic core is FERRITE CORE.
3. plasma source apparatus according to claim 1, is characterized in that, described chamber is vacuum chamber.
4. the plasma source apparatus according to any one of claim 1-3, is characterized in that, described chamber is constructed to the structure being suitable for closed magnetic loop formation.
5. the plasma source apparatus according to any one of claim 1-3, is characterized in that, described matching network is the transformer of L-type matching network, II type matching network or impedance transformation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410444054.7A CN104244559A (en) | 2014-09-02 | 2014-09-02 | Plasma source device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410444054.7A CN104244559A (en) | 2014-09-02 | 2014-09-02 | Plasma source device |
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| CN104244559A true CN104244559A (en) | 2014-12-24 |
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| CN201410444054.7A Pending CN104244559A (en) | 2014-09-02 | 2014-09-02 | Plasma source device |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0908923A2 (en) * | 1997-10-10 | 1999-04-14 | European Community | Method and apparatus to produce large inductive plasma for plasma processing |
| CN1870851A (en) * | 2005-05-23 | 2006-11-29 | 新动力等离子体株式会社 | Plasma chamber with discharge inducing bridge and plasma treating system using same |
| CN1901772A (en) * | 2005-07-22 | 2007-01-24 | 三星电子株式会社 | Apparatus to treat a substrate |
| CN101064986A (en) * | 2006-04-24 | 2007-10-31 | 新动力等离子体株式会社 | Inductively coupled plasma reactor with multiple magnetic cores |
| KR20100048795A (en) * | 2008-10-31 | 2010-05-11 | 위순임 | Magnetically enhanced plasma reactor |
| KR20100061126A (en) * | 2008-11-28 | 2010-06-07 | 위순임 | Compound plasma reactor |
| CN102484071A (en) * | 2010-07-20 | 2012-05-30 | 三井造船株式会社 | Apparatus for heat-treating semiconductor substrate |
| CN202905659U (en) * | 2012-10-12 | 2013-04-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Matching device and plasma processing equipment |
| US20130171038A1 (en) * | 2012-01-04 | 2013-07-04 | Dae-Kyu Choi | Magnetic flux channel coupled plasma reactor |
-
2014
- 2014-09-02 CN CN201410444054.7A patent/CN104244559A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0908923A2 (en) * | 1997-10-10 | 1999-04-14 | European Community | Method and apparatus to produce large inductive plasma for plasma processing |
| CN1870851A (en) * | 2005-05-23 | 2006-11-29 | 新动力等离子体株式会社 | Plasma chamber with discharge inducing bridge and plasma treating system using same |
| CN1901772A (en) * | 2005-07-22 | 2007-01-24 | 三星电子株式会社 | Apparatus to treat a substrate |
| CN101064986A (en) * | 2006-04-24 | 2007-10-31 | 新动力等离子体株式会社 | Inductively coupled plasma reactor with multiple magnetic cores |
| KR20100048795A (en) * | 2008-10-31 | 2010-05-11 | 위순임 | Magnetically enhanced plasma reactor |
| KR20100061126A (en) * | 2008-11-28 | 2010-06-07 | 위순임 | Compound plasma reactor |
| CN102484071A (en) * | 2010-07-20 | 2012-05-30 | 三井造船株式会社 | Apparatus for heat-treating semiconductor substrate |
| US20130171038A1 (en) * | 2012-01-04 | 2013-07-04 | Dae-Kyu Choi | Magnetic flux channel coupled plasma reactor |
| CN202905659U (en) * | 2012-10-12 | 2013-04-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Matching device and plasma processing equipment |
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