CN104241518A - Passivation method for wafer of surface acoustic wave device - Google Patents
Passivation method for wafer of surface acoustic wave device Download PDFInfo
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- CN104241518A CN104241518A CN201410434016.3A CN201410434016A CN104241518A CN 104241518 A CN104241518 A CN 104241518A CN 201410434016 A CN201410434016 A CN 201410434016A CN 104241518 A CN104241518 A CN 104241518A
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000002161 passivation Methods 0.000 title claims abstract description 55
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 36
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 143
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 45
- 239000003960 organic solvent Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000005520 cutting process Methods 0.000 claims abstract description 6
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 239000011261 inert gas Substances 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 64
- 239000004411 aluminium Substances 0.000 claims description 33
- 239000003292 glue Substances 0.000 claims description 16
- 238000001259 photo etching Methods 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 238000005286 illumination Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims description 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 3
- 230000003760 hair shine Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000009987 spinning Methods 0.000 abstract 2
- 229910052755 nonmetal Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a passivation method for a wafer of a surface acoustic wave device. The method specifically comprises the first step that photoresist is selected, that is, positive photoresist is selected for a positive mask, inversion photoresist is selected for a negative mask, and the photoresist is selected as an organic solvent which can not chemically react with and mix with an aluminum film and passivation layer materials; the second step that a photoresist film is made, that is, the thickness of the photoresist film is increased by selecting the photoresist with higher viscosity or reducing the photoresist spinning speed or adopting a multiple-time photoresist spinning mode; the third step that the increased distance L between the masks and the photoresist at the time of exposure is determined; the fourth step that the exposure time T is determined; the fifth step that the photoresist in the area except an electrode on the aluminum film is removed; the sixth step that a passivation layer with the thickness being h1 is prepared on the wafer through the film preparation process; the seventh step that stripping of the passivation layer is conducted, and after the passivation layer is dried through inert gas, the follow-up wafer cutting process is performed. By the adoption of the method, the aluminum film can be effectively protected in all the follow-up processes, the number of devices subjected to single passivation is increased through wafer passivation, and the production efficiency can be effectively improved.
Description
Technical field
The present invention relates to a kind of passivating method, particularly a kind of SAW (Surface Acoustic Wave) device wafer passivating method.
Background technology
The manufacture craft of SAW (Surface Acoustic Wave) device is: first on the piezoelectric substrate such as lithium niobate, lithium tantalate, evaporate one deck aluminium film, then makes the cross one another transducer of electrode by lithography, then through operations such as wafer cutting, gumming and sheet adhesion, wire bonding, encapsulation.In later process after lithography, often inevitably produce surface tear because aluminium film is outside exposed, adhere to fifth wheel, aluminium film is corroded, tube sealing splashing etc. affects the problem of device performance.At present; generally adopt and prepare one deck nonmetal film at chip surface; namely the method for passivation carrys out protect IC; concrete steps are: before packaging process; the easy mask devices such as UV film are utilized to shelter from seal area; then carry out the preparation of nonmetal passivation layer, pull down mask device afterwards again and enter packaging process.
But above-mentioned passivating method there are the following problems: the below that nonmetal passivation layer especially goes between in the subregion of chip cannot form effective covering; The operation of blocking seal area with mask device is by hand extremely complicated; Because chip has cured on shell, during passivation, the shell of different model is needed to make different fixture, especially the conventional shells such as such as TO type are difficult to realize concentrating passivation, thus cause production efficiency low; The effect of passivation layer protection aluminium film is only embodied in encapsulation process, does not cover whole later process.
Summary of the invention
The object of the present invention is to provide a kind of SAW (Surface Acoustic Wave) device wafer passivating method, solve in the past passivating method that passivation layer cannot effectively cover in the subregion of chip, masking operations is complicated, fixture makes difficulty, centralized production, protective effect cannot can not cover the problem of whole later process.
A kind of SAW (Surface Acoustic Wave) device wafer passivating method, its concrete steps are:
The first step selects photoresist
In SAW (Surface Acoustic Wave) device, the electrode size of aluminium film pattern is greater than
, line thickness is less than
, and obtain aluminium film pattern by photo-mask process copy mask version, wherein, photo-mask process comprises: even glue, front baking, exposure, general exposure, rear baking, development, mask plate comprises positive version and cloudy version, and Exposure mode has projection and contact, if the projection ratio of projection exposure is
, the projection ratio of contact exposure is
.
For formed after photoetching with aluminium film pattern but still uncut wafer, according to the mask plate type selecting photoresist in photo-mask process, sun version selects positive photoresist, cloudy version selects reversal photoresist, photoresist is selected chemical reaction not to occur and immiscible organic solvent, if the sensitive wave length of photoresist is with aluminium film and passivation material
, setting exposure wavelength is the sensitive wave length of photoresist
.
Second step makes photoresist film
If pre-prepared passivation layer thickness is
.What formed after photoetching on still uncut wafer with interdigital figure, adopts even glue mode to prepare photoresist film, and is cured photoresist film according to the front baking condition in photo-mask process, the thickness of photoresist film
.The mode selected the larger photoresist of viscosity or reduce even glue rotating speed or repeatedly even glue increases the thickness of photoresist film.
The distance increased between mask plate and photoresist when 3rd step is determined to expose
Under contact exposure mode, the distance between mask and photoresist is zero; Under projection exposure mode, photoresist is in the focus of lens below mask.
The line pitch adopting measuring microscope to record on mask plate is
, line thickness is
, the electrode width of positive version or the electrode spacing of cloudy version are
.
During exposure, wavelength is
light there is diffraction at the lines place of mask, each line pitch is equal to a single seam, and according to the diffraction theory of light, the distribution of light intensity is provided by fraunhofer single slit diffraction equation:
（1）
Wherein,
for the largest light intensity of single seam center, be equal to the exposure light intensity in photo-mask process,
,
for the angle at diffraction light and Dan Feng center, the half-angular breadth of zero order fringe is
.
For making the zero order fringe of the diffracted light of the photoresist below mask plate lines just in time shine completely, the minimum range increased between mask and photoresist
for:
（2）
Impact due to diffraction light can make electrode diminish, in order to not affect follow-up bonding, if required aluminum film electrode minimum widith is
, the ultimate range that mask and photoresist increase
for:
（3）
The ultimate range that setting mask and photoresist increase
be less than the half of depth of focus.In projection exposure,
（4）
Wherein,
,
refer to the refractive index of image space,
refer to overall amplification,
for numerical aperture.
In contact exposure,
（5）
When adopting projection exposure, the distance increased between mask and photoresist
for:
,
When adopting contact exposure, the distance increased between mask and photoresist
for:
,
4th step determines the time for exposure
The distance increased between mask plate and photoresist is
time, if deflection angle is
diffraction light just in time shine photoresist below mask plate lines completely, then
.
Selected photoresist in intensity is
illumination penetrate down, the elapsed time
fully exposed afterwards, the time
, general exposure when using cloudy version and development conditions be all with reference to the technological parameter in photo-mask process.
When using positive version, for making the photoresist below mask plate lines, the photoresist lines place namely formed after development is fully exposed, and the setting time for exposure is:
（6）
Wherein
.
When using cloudy version, object is different from positive version, for reducing the reversal photoresist below mask plate line pitch, and the intensity that the photoresist lines place namely formed after development is exposed, setting time for exposure
, meanwhile, setting the general time for exposure is greater than general time for exposure in photo-mask process.
5th step removes the photoresist beyond aluminum film electrode
Adopt the mode of photoetching, the distance that arranging increases between mask plate and photoresist is
, temporally
expose wafer, the alignment precision of mask plate and aluminium film pattern is realized by mask aligner.
Be cured baking to the wafer after exposure by the rear baking condition in photo-mask process, use during cloudy version and carry out general exposure again, then carry out the photoresist beyond development operation removal aluminium film pattern top electrode, developing time is greater than the developing time in photo-mask process.
6th step prepares passivation layer
Utilize thin film preparation process on wafer, prepare thickness to be
passivation layer.
7th step peels off passivation layer
The wafer preparing passivation layer is put into the organic solvent dissolving photoresist to soak, there is not chemical reaction and immiscible in organic solvent and aluminium film and passivation material, until the photoresist on electrode comes off, carrying out ultrasonic cleaning until photoresist dissolves completely by facing down containing one of passivation layer again, then drying up the wafer cutting action that can enter rear road with inert gas.
So far, the wafer passivation of SAW (Surface Acoustic Wave) device is completed.
The present invention is directed to the characteristic of SAW (Surface Acoustic Wave) device, electrode size is greater than
, line thickness is less than
, by changing the spacing of mask plate and photoresist, exposure and developing time, reaching and can realize only in the effect that aluminum film electrode place has photoresist to cover without the need to making mask plate in addition, then completing wafer passivation by preparing and peeling off passivation layer.The present invention can save the cost of manufacture of mask plate; Aluminium film is all effectively protected in whole later process; Wafer passivation adds the number of devices of single passivation, can effectively enhance productivity.
Embodiment
embodiment 1
A kind of SAW (Surface Acoustic Wave) device wafer passivating method, its concrete steps are:
The first step selects photoresist
In SAW (Surface Acoustic Wave) device SBP50, the electrode size of aluminium film pattern is
, be greater than
, line thickness is
, be less than
, and obtain aluminium film pattern by photo-mask process copy mask version, wherein, photo-mask process comprises: even glue, front baking, exposure, general exposure, rear baking, development, and mask plate is positive version, and Exposure mode is contact, and the projection ratio of contact exposure is
.
For formed after photoetching with aluminium film pattern but still uncut wafer, according to the mask plate type selecting photoresist in photo-mask process, sun version selects positive photoresist, and photoresist is dissolved in and chemical reaction does not occur and immiscible organic solvent with aluminium film and passivation material, the sensitive wave length of photoresist is
, setting exposure wavelength is the sensitive wave length of photoresist
.
Second step makes photoresist film
If pre-prepared passivation layer thickness is
.What formed after photoetching on still uncut wafer, adopts even glue mode to prepare photoresist film with interdigital figure, and adopts the front baking condition in photo-mask process to be cured photoresist film, the thickness of photoresist film
.The mode selected the larger photoresist of viscosity or reduce even glue rotating speed or repeatedly even glue increases the thickness of photoresist film.
The distance increased between mask plate and photoresist when 3rd step is determined to expose
Under contact exposure mode, the distance between mask and photoresist is zero.
The line pitch adopting measuring microscope to record on mask plate is
, line thickness is
, the electrode width of positive version or the electrode spacing of cloudy version are
.
During exposure, wavelength is
light there is diffraction at the lines place of mask, each line pitch is equal to a single seam, and according to the diffraction theory of light, the distribution of light intensity is provided by fraunhofer single slit diffraction equation:
（1）
Wherein,
for the largest light intensity of single seam center, be equal to the exposure light intensity in photo-mask process,
,
for the angle at diffraction light and Dan Feng center, the half-angular breadth of zero order fringe is
.
For making the zero order fringe of the diffracted light of the photoresist below mask plate lines just in time shine completely, the minimum range increased between mask and photoresist
for:
（2）
Impact due to diffraction light can make electrode diminish, in order to not affect follow-up bonding, if required aluminum film electrode minimum widith is
, the ultimate range that mask and photoresist increase
for:
（3）
The ultimate range that setting mask and photoresist increase
be less than the half of depth of focus.In contact exposure,
（5）
When adopting contact exposure, the distance increased between mask and photoresist
for:
, namely
.
4th step determines the time for exposure
The distance increased between mask plate and photoresist is
time, if deflection angle is
diffraction light just in time shine photoresist below mask plate lines completely, then
.
Selected photoresist in intensity is
illumination penetrate down, the elapsed time
fully exposed afterwards, the time
, developing time is 10s, all with reference to the technological parameter in photo-mask process.
When using positive version, for making the photoresist below mask plate lines, the photoresist lines place namely formed after development is fully exposed, and the setting time for exposure is:
（6）
Wherein
.
5th step removes the photoresist beyond aluminum film electrode
Adopt the mode of photoetching, the distance that arranging increases between mask plate and photoresist is
, temporally
expose wafer, the alignment precision of mask plate and aluminium film pattern is realized by mask aligner.
Be cured baking to the wafer after exposure by the rear baking condition in photo-mask process, then carry out the photoresist beyond development operation removal aluminium film pattern top electrode, developing time is
, be greater than the developing time in photo-mask process
.
6th step prepares passivation layer
Utilize thin film preparation process on wafer, prepare thickness to be
passivation layer.
7th step peels off passivation layer
The wafer preparing passivation layer is put into the organic solvent dissolving photoresist to soak, there is not chemical reaction and immiscible in organic solvent and aluminium film and passivation material, until the photoresist on electrode comes off, carrying out ultrasonic cleaning until photoresist dissolves completely by facing down containing one of passivation layer again, then drying up the wafer cutting action that can enter rear road with inert nitrogen gas.
So far, the wafer passivation of SAW (Surface Acoustic Wave) device is completed.
embodiment 2
A kind of SAW (Surface Acoustic Wave) device wafer passivating method, its concrete steps are:
The first step selects photoresist
In SAW (Surface Acoustic Wave) device SBP1672Y10S, the electrode size of aluminium film pattern is
, be greater than
, line thickness is
, be less than
, and obtain aluminium film pattern by photo-mask process copy mask version, wherein, photo-mask process comprises: even glue, front baking, exposure, general exposure, rear baking, development, and mask plate is cloudy version, and Exposure mode is projection, and the projection ratio of projection exposure is
.
For formed after photoetching with aluminium film pattern but still uncut wafer, according to the mask plate type selecting photoresist in photo-mask process, cloudy version selects reversal photoresist, and photoresist is dissolved in and chemical reaction does not occur and immiscible organic solvent with aluminium film and passivation material, the sensitive wave length of photoresist is
, setting exposure wavelength is the sensitive wave length of photoresist
.
Second step makes photoresist film
If pre-prepared passivation layer thickness is
.What formed after photoetching on still uncut wafer, adopts even glue mode to prepare photoresist film with interdigital figure, and adopts the front baking condition in photo-mask process to be cured photoresist film, the thickness of photoresist film
.The mode selected the larger photoresist of viscosity or reduce even glue rotating speed or repeatedly even glue increases the thickness of photoresist film.
The distance increased between mask plate and photoresist when 3rd step is determined to expose
Under projection exposure mode, photoresist is in the focus of lens below mask.
The line pitch adopting measuring microscope to record on mask plate is
, line thickness is
, the electrode width of positive version or the electrode spacing of cloudy version are
.
During exposure, wavelength is
light there is diffraction at the lines place of mask, each line pitch is equal to a single seam, and according to the diffraction theory of light, the distribution of light intensity is provided by fraunhofer single slit diffraction equation:
（1）
Wherein,
for the largest light intensity of single seam center, be equal to the exposure light intensity in photo-mask process,
,
for the angle at diffraction light and Dan Feng center, the half-angular breadth of zero order fringe is
.
For making the zero order fringe of the diffracted light of the photoresist below mask plate lines just in time shine completely, the minimum range increased between mask and photoresist
for:
（2）
Impact due to diffraction light can make electrode diminish, in order to not affect follow-up bonding, if required aluminum film electrode minimum widith is
, the ultimate range that mask and photoresist increase
for:
（3）
The ultimate range that setting mask and photoresist increase
be less than the half of depth of focus.In projection exposure,
（4）
Wherein,
,
refer to the refractive index of image space,
refer to overall amplification,
for numerical aperture.
When adopting projection exposure, the distance increased between mask and photoresist
for:
, namely
.
4th step determines the time for exposure
The distance increased between mask plate and photoresist is
time, if deflection angle is
diffraction light just in time shine photoresist below mask plate lines completely, then
.
Selected photoresist in intensity is
illumination penetrate down, the elapsed time
fully exposed afterwards, the time
, general exposure light intensity is
, the time is
, developing time is
, all with reference to the technological parameter in photo-mask process.
When using cloudy version, for reducing the reversal photoresist below mask plate line pitch, the intensity that the photoresist lines place namely formed after development is exposed, setting time for exposure
, meanwhile, setting the general time for exposure is
be greater than the general time for exposure in photo-mask process
.
5th step removes the photoresist beyond aluminum film electrode
Adopt the mode of photoetching, the distance that arranging increases between mask plate and photoresist is
, temporally
expose wafer, the alignment precision of mask plate and aluminium film pattern is realized by mask aligner.
By the rear baking condition in photo-mask process, baking is cured to the wafer after exposure, then carries out general exposure, the general time for exposure
remove the photoresist beyond aluminium film pattern top electrode with development operation, developing time is
, be greater than the developing time in photo-mask process
.
6th step prepares passivation layer
Utilize thin film preparation process on wafer, prepare thickness to be
passivation layer.
7th step peels off passivation layer
The wafer preparing passivation layer is put into the organic solvent dissolving photoresist to soak, there is not chemical reaction and immiscible in organic solvent and aluminium film and passivation material, until the photoresist on electrode comes off, carrying out ultrasonic cleaning until photoresist dissolves completely by facing down containing one of passivation layer again, then drying up the wafer cutting action that can enter rear road with inert nitrogen gas.
So far, the wafer passivation of SAW (Surface Acoustic Wave) device is completed.
Claims (1)
1. a SAW (Surface Acoustic Wave) device wafer passivating method, is characterized in that concrete steps are:
The first step selects photoresist
In SAW (Surface Acoustic Wave) device, the electrode size of aluminium film pattern is greater than 200 μm, line thickness is less than 20 μm, and obtain aluminium film pattern by photo-mask process copy mask version, wherein, photo-mask process comprises: even glue, front baking, exposure, general exposure, rear baking, development, mask plate comprises positive version and cloudy version, Exposure mode has projection and contact, if the projection ratio of projection exposure is γ, the projection ratio of contact exposure is γ=1;
For formed after photoetching with aluminium film pattern but still uncut wafer, according to the mask plate type selecting photoresist in photo-mask process, sun version selects positive photoresist, cloudy version selects reversal photoresist, photoresist is selected chemical reaction not to occur and immiscible organic solvent with aluminium film and passivation material, if the sensitive wave length of photoresist is λ, setting exposure wavelength is the sensitive wave length λ of photoresist;
Second step makes photoresist film
If pre-prepared passivation layer thickness is h
1; What formed after photoetching on still uncut wafer with interdigital figure, adopts even glue mode to prepare photoresist film, and is cured photoresist film according to the front baking condition in photo-mask process, the thickness h > h of photoresist film
1; The mode selected the larger photoresist of viscosity or reduce even glue rotating speed or repeatedly even glue increases the thickness of photoresist film;
The distance L increased between mask plate and photoresist when 3rd step is determined to expose
Under contact exposure mode, the distance between mask and photoresist is zero; Under projection exposure mode, photoresist is in the focus of lens below mask;
Adopt the measuring microscope line pitch recorded on mask plate to be a, line thickness is b, and the electrode width of positive version or the electrode spacing of cloudy version are c;
During exposure, wavelength is that the light of λ, at the lines place of mask, diffraction occurs, and each line pitch is equal to a single seam, and according to the diffraction theory of light, the distribution of light intensity is provided by fraunhofer single slit diffraction equation:
Wherein, I
0for the largest light intensity of single seam center, be equal to the exposure light intensity in photo-mask process,
θ is the angle at diffraction light and Dan Feng center, and the half-angular breadth of zero order fringe is θ
0=λ/a;
For making the zero order fringe of the diffracted light of the photoresist below mask plate lines just in time shine completely, the minimum range L increased between mask and photoresist
minfor:
Impact due to diffraction light can make electrode diminish, in order to not affect follow-up bonding, if required aluminum film electrode minimum widith is c ', and the ultimate range L that mask and photoresist increase
maxfor:
The ultimate range L ' that setting mask and photoresist increase
maxbe less than the half of depth of focus; In projection exposure,
Wherein, K=240 μm, n refer to the refractive index of image space, and M=γ refers to overall amplification, and NA is numerical aperture; In contact exposure,
L '
max contact=D/2=+ ∞ (5)
When adopting projection exposure, the distance L increased between mask and photoresist is: L
min< L < min (L
max, L '
max projection),
When adopting contact exposure, the distance L increased between mask and photoresist is: L
min< L < min (L
max, L '
max contact),
4th step determines time for exposure T
When the distance increased between mask plate and photoresist is L, if the diffraction light that deflection angle is θ ' just in time shines the photoresist below mask plate lines completely, then θ '=arctan ((a+b)/2L);
Selected photoresist is I in intensity
0illumination penetrate down, fully exposed after elapsed time t, time t, general exposure when using cloudy version and development conditions are all with reference to the technological parameter in photo-mask process;
When using positive version, for making the photoresist below mask plate lines, the photoresist lines place namely formed after development is fully exposed, and the setting time for exposure is:
Wherein
When using cloudy version, object is different from positive version, for reducing the reversal photoresist below mask plate line pitch, namely the intensity that the photoresist lines place formed after development is exposed, setting time for exposure T < t, meanwhile, setting the general time for exposure is greater than general time for exposure in photo-mask process;
5th step removes the photoresist beyond aluminum film electrode
Adopt the mode of photoetching, the distance that arranging increases between mask plate and photoresist is L, and temporally T exposes wafer, and the alignment precision of mask plate and aluminium film pattern is realized by mask aligner;
Be cured baking to the wafer after exposure by the rear baking condition in photo-mask process, use during cloudy version and carry out general exposure again, then carry out the photoresist beyond development operation removal aluminium film pattern top electrode, developing time is greater than the developing time in photo-mask process;
6th step prepares passivation layer
Thin film preparation process is utilized on wafer, to prepare thickness for h
1passivation layer;
7th step peels off passivation layer
The wafer preparing passivation layer is put into the organic solvent dissolving photoresist to soak, there is not chemical reaction and immiscible in organic solvent and aluminium film and passivation material, until the photoresist on electrode comes off, carrying out ultrasonic cleaning until photoresist dissolves completely by facing down containing one of passivation layer again, then drying up the wafer cutting action that can enter rear road with inert gas;
So far, the wafer passivation of SAW (Surface Acoustic Wave) device is completed.
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|---|---|---|---|
| CN201410434016.3A CN104241518B (en) | 2014-08-29 | 2014-08-29 | A kind of SAW device wafer passivating method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410434016.3A CN104241518B (en) | 2014-08-29 | 2014-08-29 | A kind of SAW device wafer passivating method |
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|---|---|
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| CN104241518B CN104241518B (en) | 2017-03-15 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107966883A (en) * | 2017-11-17 | 2018-04-27 | 北京航天微电科技有限公司 | A kind of method and SAW filter to SAW filter photoetching alignment |
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| CN1405978A (en) * | 2001-09-19 | 2003-03-26 | 株式会社村田制作所 | Electrode pattern formation method for sound surface-wave element |
| JP2008005464A (en) * | 2006-05-23 | 2008-01-10 | Kyocera Corp | Method of manufacturing surface acoustic wave device |
| CN101192816A (en) * | 2006-11-28 | 2008-06-04 | 富士通媒体部品株式会社 | Acoustic wave device and method of manufacturing the same |
| US20120115087A1 (en) * | 2010-11-10 | 2012-05-10 | Qiuxia Xu | Method for improving electron-beam |
| CN103345122A (en) * | 2013-06-27 | 2013-10-09 | 上海华力微电子有限公司 | System and method for improving photolithography process capacity |
-
2014
- 2014-08-29 CN CN201410434016.3A patent/CN104241518B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1405978A (en) * | 2001-09-19 | 2003-03-26 | 株式会社村田制作所 | Electrode pattern formation method for sound surface-wave element |
| JP2008005464A (en) * | 2006-05-23 | 2008-01-10 | Kyocera Corp | Method of manufacturing surface acoustic wave device |
| CN101192816A (en) * | 2006-11-28 | 2008-06-04 | 富士通媒体部品株式会社 | Acoustic wave device and method of manufacturing the same |
| US20120115087A1 (en) * | 2010-11-10 | 2012-05-10 | Qiuxia Xu | Method for improving electron-beam |
| CN103345122A (en) * | 2013-06-27 | 2013-10-09 | 上海华力微电子有限公司 | System and method for improving photolithography process capacity |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107966883A (en) * | 2017-11-17 | 2018-04-27 | 北京航天微电科技有限公司 | A kind of method and SAW filter to SAW filter photoetching alignment |
| CN107966883B (en) * | 2017-11-17 | 2020-02-21 | 北京航天微电科技有限公司 | Method for photoetching and overlaying surface acoustic wave filter and surface acoustic wave filter |
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| Publication number | Publication date |
|---|---|
| CN104241518B (en) | 2017-03-15 |
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