CN104241261A - LED packaging structure and method - Google Patents
LED packaging structure and method Download PDFInfo
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- CN104241261A CN104241261A CN201310228329.9A CN201310228329A CN104241261A CN 104241261 A CN104241261 A CN 104241261A CN 201310228329 A CN201310228329 A CN 201310228329A CN 104241261 A CN104241261 A CN 104241261A
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Abstract
The invention discloses an LED packaging structure. The LED packaging structure comprises a base plate, an LED chip layer, a conductive electrode layer and a fluorescent material layer, wherein the LED chip layer, the conductive electrode layer and the fluorescent material layer are distributed on the base plate. The invention further provides an LED plane integration process packaging method. The method comprises the steps that firstly, LED chips are fixed to the base plate; secondly, the space on the periphery of the planes of the LED chips is filled with insulating packing media; thirdly, the conductive electrode layer is made on the LED chips through the photolithographic process; fourthly, the LED chip layer and a printed circuit layer are covered with the fluorescent material layer. According to the LED packaging structure and method, the one-by-one wire bonding process for a single device in the prior art is changed to the photolithographic process, so that the circuit layer is formed in a one-off mode, the LED packaging process is simplified, and the production efficiency is improved; the requirements for flexibly designing a circuit are met, and the LED packaging structure and method are especially suitable for an LED light source with a multi-chip high-voltage cascaded structure; the plane integration process is adopted to replace the discrete mesa device process in the prior art, and the LED packaging thickness is reduced, so that the reliability of the LED packaging structure is greatly enhanced.
Description
Technical field
The present invention relates to LED and manufacture field, particularly relate to a kind of LED encapsulation structure and method.
Background technology
LED is a kind of solid-state semiconductor device, and it can be directly luminous energy electric energy conversion.Compared with traditional incandescent lamp, fluorescent lamp, white light LEDs has the advantages such as power consumption is little, luminous efficiency is high, long service life, energy-conserving and environment-protective, and therefore it is not only widely used in normal lighting field, and enters field of display devices.At present, the technology obtaining white light LEDs can be divided into two large classes, that is: (1) adopts three kinds of LED chip mixing of launching red, green, blue coloured light line; (2) monochromatic (blue light or ultraviolet) LED chip is adopted to excite suitable fluorescent material.Current white light LEDs mainly utilize blue-light LED chip and effectively can be excited by blue light, the fluorescent material YAG:Ce3+ of Yellow light-emitting low temperature combines, the gold-tinted of complementation and blue light are mixed by recycling lens principle, thus obtain white light.
In prior art, the encapsulation of LED normally makes P-N junction electrode on blue chip, electrode makes gold thread, is connected by chip electrode with external terminal, then on chip, apply fluorescent material.But current encapsulating structure also exists following defect: first, use coating YAG:Ce3+ fluorescent material and blue chip to arrange in pairs or groups and produce white light, fluorescent material thickness in LED, uniformity is poor, and phosphor gel is easily aging, fluorescent material large usage quantity, decay of luminescence and complex process; Secondly, making on electrode, gold thread technical process is loaded down with trivial details, consuming time, and cost is high; Again, the discrete mesa devices technique that LED technique of the prior art adopts usually, compared with collection layer plane technique, integrated level is low, and operation simplifies not, and encapsulation rear stability is poor.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of structure and the method that are realized LED by collection layer plane technique, thus improves LED integrated level, simplifies packaging technology, and effectively improves LED rear stability.
For solving the problem, a kind of LED encapsulation structure of the present invention, comprises base plate and is successively distributed in LED core lamella, layer printed circuit board and the fluorescent material layer on base plate; Described LED core lamella comprises at least one and is fixed on LED chip on base plate, and is coated on the transparent insulation filled media around described LED chip plane; Described layer printed circuit board comprises and connects described LED chip and external wiring pin, and is attached to the connecting line on described LED core lamella; Described fluorescent material layer is positioned at above described layer printed circuit board.
Described fluorescent material layer comprises fluorescent crystal or fluorescent material.
Described fluorescent crystal comprises Garnet single crystal fluorescent material.
Described fluorescent crystal surface coating transparent silica gel, is bonded in layer printed circuit board upper surface.
Described transparent insulating medium comprises phosphate glass.
Described base is aluminium sheet, copper coin or aluminium alloy plate.
Described base is circular slab, and this circular slab edge is provided with axial boss, and the height of described boss is lower than described LED chip height.
Described connecting line is transparent conductive film.
A kind of LED encapsulation method, comprises the following steps:
1) LED chip is fixed on base plate;
2) around LED chip plane, fill transparent insulation filled media, packed height is identical with LED chip height, forms LED core lamella;
3) on LED chip, made the connecting line connecting LED chip and external wiring pin by photoetching process, this connecting line is attached on described LED core lamella, forms layer printed circuit board;
4) on LED core lamella and layer printed circuit board, fluorescent material layer is covered.
Described step 2) comprising:
21) on LED chip, be coated with transparent insulation filled media, make transparent insulation filled media cover LED chip;
22) plane polishing is carried out to transparent insulation filled media, expose to LED chip upper surface;
Described fluorescent material layer comprises fluorescent crystal, and described step 4) comprises:
41) on fluorescent crystal, transparent silica gel is coated with;
42) fluorescent crystal is bonded in layer printed circuit board upper surface by transparent silica gel.
LED encapsulation structure of the present invention and method, make the technique of routing one by one of individual devices in prior art into photoetching process disposable formation layer printed circuit board, simplify the packaging technology of LED, enhance productivity; Meet the requirement of flexible design circuit, being particularly useful for is high-tension series connection; Adopt planar substrate technique, instead of discrete mesa devices technique of the prior art, reduce the package thickness of LED, the reliability of LED encapsulation structure is strengthened greatly.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of LED encapsulation structure of the present invention.
Fig. 2 is the flow chart of LED encapsulation method of the present invention.
Fig. 3 is the structural representation of LED core lamella formation process in LED encapsulation method of the present invention.
Embodiment
In order to make those skilled in the art person understand technical solution of the present invention better, below in conjunction with drawings and embodiments, the present invention is described in further detail.
As shown in Figure 1, a kind of LED encapsulation structure of the present invention, comprises base plate 1 and is successively distributed in LED core lamella, layer printed circuit board and the fluorescent material layer on base plate 1.
Described LED core lamella comprises multiple mutual series connection and is fixed on the LED chip 2 on base plate 1, and is coated on the insulation filling medium 3 around described LED chip 2 plane.Wherein, described dielectric is preferably transparent insulating medium, thus ensures the light emission rate not affecting LED chip.Described transparent insulating medium can be phosphate glass, certainly, is not limited to phosphate glass.
Described layer printed circuit board comprises and connects described LED chip 2 and external wiring pin (not shown), and is attached to the connecting line 4 on described LED core lamella.
Described connecting line 4 is transparent conductive film, and this transparent conductive film comprises metal film series, transparent conductive oxide series, meets film series or compound film series of conductor films, is preferably indium tin oxide transparent conductive semiconductor film or Ni/Au conducting film.
Adopt transparent conductive film as the power lead of LED chip, avoid in prior art on the one hand and beat the higher defect of gold thread cost, enhance the projection of light on the other hand, improve light emission rate.
Described fluorescent material layer comprises fluorescent material or fluorescent crystal.
The embodiment of the present invention is described for fluorescent crystal, and as shown in Figure 1, described fluorescent crystal 5 can be Garnet single crystal fluorescent material, and the surface coating transparent silica gel 6 of this fluorescent crystal 5, is bonded in layer printed circuit board upper surface.
Fluorescent crystal has good thermal conductivity, can improve the heat dispersion of LED chip encapsulating structure, and fluorescent crystal also has the feature being easy to machine-shaping simultaneously, and adaptability is stronger.
Described base 1 is aluminium sheet, copper coin or aluminium alloy plate, to ensure good thermal diffusivity.
This base 1 is circular slab, and the edge of circular slab is provided with axial boss 101, and the height of described boss 101 is lower than the height of described LED chip 2.
A kind of LED encapsulation method, as shown in Figure 2, comprises the following steps:
1) be fixed on base plate 1 by multiple LED chip 2 by die bond technique, the arrangement of LED chip can distribute according to design needs;
2) around LED chip 2 plane, fill insulation filling medium 3, packed height is identical with LED chip height, forms LED core lamella; Insulation filling medium plays the effect of insulation on the one hand, avoid being short-circuited between P, N pole of single led chip, also avoid being short-circuited between multiple LED chip, on the other hand, by filling dielectric, make the upper surface of this LED core lamella smooth, so that make layer printed circuit board on LED core lamella;
This step 2 in the present embodiment) can comprise the following steps:
21) see Fig. 3 a, by spin coating process even spread insulation filling medium on LED chip, the whole LED chip of insulation filling dielectric overlay is made;
22) see Fig. 3 b, plane polishing is carried out to transparent insulation filled media, expose to LED chip upper surface.
3) on LED chip, made the connecting line connecting LED chip and external wiring pin by photoetching process, this connecting line is attached on described LED core lamella, forms layer printed circuit board;
Photoetching process is that one conventional in IC manufacturing utilizes optics-chemical principle and chemistry, physical etchings method, is delivered to by circuitous pattern on single-crystal surface or dielectric layer, forms the technology of effective graphical window or functional graphic.The basic step of photoetching process generally includes: gluing, front baking, exposure, development, rear baking, corrode and remove photoresist.
4) cover on LED core lamella and layer printed circuit board and fix fluorescent material layer.
Described fluorescent material layer is preferably fluorescent crystal, and described step 4) comprises:
41) on fluorescent crystal, transparent silica gel is coated with;
42) fluorescent crystal is bonded in layer printed circuit board upper surface by transparent silica gel.
LED encapsulation structure of the present invention and method, make the technique of routing one by one of individual devices in prior art into photoetching process disposable formation layer printed circuit board, simplify the packaging technology of LED, enhance productivity; Meet the requirement of flexible design circuit, being particularly useful for is high-tension series connection; Adopt planar substrate technique, instead of discrete mesa devices technique of the prior art, reduce the package thickness of LED, the reliability of LED encapsulation structure is strengthened greatly.
Claims (10)
1. a LED encapsulation structure, is characterized in that: comprise base plate and be distributed in LED core lamella, layer printed circuit board and the fluorescent material layer on base plate; Described LED core lamella comprises at least one and is fixed on LED chip on base plate, and is coated on the insulation filling medium around described LED chip plane; Described layer printed circuit board comprises and connects described LED chip and external wiring pin, and is attached to the connecting line on described LED core lamella; Described fluorescent material layer is positioned at above described layer printed circuit board.
2. LED encapsulation structure as claimed in claim 1, is characterized in that: described fluorescent material layer comprises fluorescent crystal or fluorescent material.
3. LED encapsulation structure as claimed in claim 2, is characterized in that: described fluorescent crystal comprises Garnet monocrystalline or polycrystalline fluorescent material.
4. LED encapsulation structure as claimed in claim 2, is characterized in that: described fluorescent crystal surface coating transparent silica gel, is bonded in layer printed circuit board upper surface.
5. LED encapsulation structure as claimed in claim 1, is characterized in that: described dielectric is transparent insulating medium.
6. LED encapsulation structure as claimed in claim 5, is characterized in that: described transparent insulating medium is phosphate glass.
7. LED encapsulation structure as claimed in claim 1, is characterized in that: described base is aluminium sheet, copper coin or aluminium alloy plate; Described base is circular slab, and this circular slab edge is provided with axial boss, and the height of described boss is lower than described LED chip height.
8. a LED encapsulation method, comprises the following steps:
1) LED chip is fixed on base plate;
2) around LED chip plane, fill insulation filling medium, packed height is identical with LED chip height, forms LED core lamella;
3) on LED chip, made the connecting line connecting LED chip and external wiring pin by photoetching process, this connecting line is attached on described LED core lamella, forms layer printed circuit board;
4) fluorescent material layer is covered on above LED core lamella and layer printed circuit board.
9. LED encapsulation method as claimed in claim 8, is characterized in that, described step 2) comprising:
21) on LED chip, be coated with transparent insulation filled media, make transparent insulation filled media cover LED chip;
22) plane polishing is carried out to transparent insulation filled media, expose to LED chip upper surface.
10. LED encapsulation method as claimed in claim 8, it is characterized in that, described fluorescent material layer comprises fluorescent crystal, and described step 4) comprises:
41) on fluorescent crystal, transparent silica gel is coated with;
42) fluorescent crystal is bonded in layer printed circuit board upper surface by transparent silica gel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310228329.9A CN104241261A (en) | 2013-06-08 | 2013-06-08 | LED packaging structure and method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310228329.9A CN104241261A (en) | 2013-06-08 | 2013-06-08 | LED packaging structure and method |
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| CN104241261A true CN104241261A (en) | 2014-12-24 |
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| CN201310228329.9A Pending CN104241261A (en) | 2013-06-08 | 2013-06-08 | LED packaging structure and method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511430A (en) * | 2018-04-28 | 2018-09-07 | 中国人民大学 | A kind of crystallo-luminescence paster LED lamp bead and preparation method thereof |
| CN110767795A (en) * | 2019-12-27 | 2020-02-07 | 华引芯（武汉）科技有限公司 | Miniature LED light-emitting device and preparation method thereof |
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| CN102456803A (en) * | 2010-10-20 | 2012-05-16 | 展晶科技(深圳)有限公司 | Packaging structure of light emitting diode |
| JP2012138454A (en) * | 2010-12-27 | 2012-07-19 | Citizen Holdings Co Ltd | Semiconductor light-emitting device and manufacturing method of the same |
| CN103000795A (en) * | 2011-09-15 | 2013-03-27 | 隆达电子股份有限公司 | Packaging structure of semiconductor light-emitting element |
| CN203377265U (en) * | 2013-06-08 | 2014-01-01 | 昆山开威电子有限公司 | LED packaging structure |
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2013
- 2013-06-08 CN CN201310228329.9A patent/CN104241261A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102456803A (en) * | 2010-10-20 | 2012-05-16 | 展晶科技(深圳)有限公司 | Packaging structure of light emitting diode |
| JP2012138454A (en) * | 2010-12-27 | 2012-07-19 | Citizen Holdings Co Ltd | Semiconductor light-emitting device and manufacturing method of the same |
| CN103000795A (en) * | 2011-09-15 | 2013-03-27 | 隆达电子股份有限公司 | Packaging structure of semiconductor light-emitting element |
| CN203377265U (en) * | 2013-06-08 | 2014-01-01 | 昆山开威电子有限公司 | LED packaging structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511430A (en) * | 2018-04-28 | 2018-09-07 | 中国人民大学 | A kind of crystallo-luminescence paster LED lamp bead and preparation method thereof |
| CN110767795A (en) * | 2019-12-27 | 2020-02-07 | 华引芯（武汉）科技有限公司 | Miniature LED light-emitting device and preparation method thereof |
| CN110767795B (en) * | 2019-12-27 | 2020-05-05 | 华引芯（武汉）科技有限公司 | Miniature LED light-emitting device and preparation method thereof |
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Effective date of abandoning: 20180504 |