CN104237984A - Production method for high-precision multistep microlens array - Google Patents
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Abstract
The invention relates to a production method for a high-precision multistep microlens array. The production method includes firstly, equidistantly producing steps of initial depth on a substrate; etching on the steps in initial depth and intervals among the steps to form the steps in set depth. By the production method, requirements on operators and production precision of operating equipment are relatively low, yield is high, a great deal of etching time can be omitted, and greater economic benefits are achieved.
Description
Technical field
The present invention relates to the method for making of a kind of multiple stage rank microlens array, belong to photoelectric device process for making and micro-optic technical field.
Background technology
The microminiature lens of microlens array to be a series of diameter be millimeter, micron dimension are by the array necessarily rearranged.Lenticule manufactured by micro-optic technology and microlens array little, lightweight with its volume, be convenient to the advantages such as integrated, array, become new scientific research development direction.
Along with the fast development of modern information technologies, lenticule is increasingly extensive in the application of every field, in duplicating machine, image analyzer, facsimile recorder, camera and medical sanitary apparatus.Utilize lenticule can converge light, improve the factor of filling a vacancy of device, solve the continuous reduction because planar array detector pixel dimension requires and the optics cross-talk, the fill factor, curve factor that occur are not high and degradation problem under detection sensitivity.
Diffraction microlens is according to Fresnel zone plate principle design, make circular step, each circular step is centered by optical axis, each annulus is equivalent to an independently plane of refraction, these circular band all can make incident ray converge to same focus. and number of steps is more, and its diffraction efficiency is higher.Microlens array often adopts the method for making of chemical wet etching.Since binary optical proposes, alignment law technology is particularly suitable for the making of diffraction microlens array, and wherein lenticular border is easily accomplished neat and sharp-pointed, and activity coefficient can reach 100%, and lightweight, cost is low, be easy to microminiaturized, array.
Technical scheme of the present invention, by first making lenticule even number endless belt figure, then obtains mask protection layer by stripping sacrifice layer method or back exposed method and is protected by finished product even loop strip substrate figure, finally makes lenticule odd number endless belt figure.The method is not only applicable to the materials such as the quartz of ultraviolet light, and is applicable to not saturating ultraviolet light but the material such as silicon, germanium that matching is higher, cost is low, practical.
This method is not only relatively low to the making accuracy requirement of operator and operating equipment, and yield rate is higher, and can save a large amount of etching times, has larger economic benefit.
Summary of the invention
The object of this invention is to provide a kind of method that can make high precision microlens array newly, in order to solve making accuracy requirement high, the yield rate lower problem of existing method to operator and operating equipment, greatly save the time etching all steps simultaneously.
For achieving the above object, the solution of the present invention comprises:
A method for making for multiple stage rank microlens array, first produces the step of initial depth at equal intervals in substrate; And then on interval on the step of each initial depth and between each step, etch, form the step of set depth.
All steps to be produced are divided into two or more groups; Arrange at equal intervals between each step of each group; Make successively by group, make all steps of first group, make all steps of second group, the like; Often organizing a performance in the manufacturing process on rank, all steps do not completed of every subsynchronous etching; Organize a performance in rank one, each step from equal with the sequence number that it is organized a performance in rank at this to the etching number of times completing experience.
Lenticular all step depth be d1, d2, d3 ..., dn; The step of the method is as follows:
1), substrate is produced spaced first to organize a performance rank:
A), substrate etches that a series of interval is arranged, the degree of depth is the step of d1;
B), protection reaches the step that set depth is d1, and etch further remaining step, Formation Depth is the step of d3;
C), protection reaches the step that set depth is d3, etches further remaining step, the like, until etch first group of all step d1, d3, d5 ..., dn;
2), organize a performance first and to produce second between rank and to organize a performance rank:
D), first organizing a performance rank of having etched is protected; Organize a performance between rank first and etch the step that a series of degree of depth is d2;
E), protection reaches the step that set depth is d2, and etch further remaining step, Formation Depth is the step of d4;
G), protection reaches the step that set depth is d4, etches further remaining step, the like, until etch first group of all step d2, d4, d6 ..., dn-1.
Step a) described in substrate, etch that a series of interval is arranged, to be the method for the step of d1 be the degree of depth: first in substrate, make sacrifice layer, spin coating photoresist on sacrifice layer, corresponding mask is utilized to carry out photoetching, development and corrosion, then etching sacrificial layer and substrate.
Steps d) described in the first method of organizing a performance rank of etching of protection be: at least organizing a performance on rank etched first makes mask protection layer, then peels off sacrifice layer.
Described sacrifice layer not transmit ultraviolet light; steps d) described in the first method of organizing a performance rank of etching of protection be: at least organizing a performance on rank etched first applies negative photoresist; carry out exposing, developing at backside of substrate, then corrode, and erode sacrifice layer.
The material of described substrate is quartz, silicon or germanium.
Described sacrifice layer is negative photoresist or negative polyimide.
Described sacrifice layer is chromium or silicon dioxide.
First, the present invention makes the high problem of accuracy requirement in order to solve existing method to operator and operating equipment, proposing a kind of thinking, when making, in substrate, first producing the step of initial depth at equal intervals; And then according to technological process, on the interval on the step of each initial depth and between each step, etch, form the step of set depth.The methods made are numerous, its key point is the step first producing initial depth in substrate at equal intervals, there is the step of initial depth, just step to be produced can be positioned, make making precision not by the impact of the follow-up operation medial error such as mask aligning, photoetching, etching, and reduce mask, the accuracy requirement of the technique such as photoetching, etching.
Further, present invention also offers a kind of thinking: when making multiple stage order array, first grouping is carried out, and gives a kind of mode of grouping: in each group, arrange all at equal intervals between each step; And then making rank of often organizing a performance, the manufacturing process on rank of often organizing a performance is identical; One organizes a performance in the manufacturing process of rank, and often etching step simultaneously, the step all the other do not completed carries out the etching of same depth, and this is that the etching of step next time saves the time.That is, the time having etched all steps is actually the time of the darkest one-level step of etching, and the method for making that the invention provides multiple stage rank microlens array saves a large amount of time.
The manufacturing process of multiple stage rank provided by the invention microlens array is: first make sacrifice layer; semi-manufacture microlens array endless belt base patterns is formed by a mask lithography; again through repeatedly mask lithography; etching forms finished product microlens array endless belt base patterns; then mask layer is made; utilize stripping sacrifice layer method or back exposed method to form mask protection layer finished product microlens array endless belt base patterns is protected; last in endless belt substrate etch, etch formation finished product microlens array endless belt base patterns through repeatedly mask lithography.
The method is not only applicable to the materials such as the quartz of ultraviolet light, and is applicable to not saturating ultraviolet light but the material such as silicon, germanium that matching is higher, cost is low, practical.In addition, the precision of microlens array of the present invention is determined by the precision of first time mask lithography, fundamentally avoid conventional sleeve carving method and make the inevitable cumulative errors of microlens array making because bringing in the operations such as mask aligning, photoetching, etching, reduce difficulty, meet high-precision requirement in microlens array manufacturing process, effective guarantee and improve the optical properties such as microlens array diffraction benefit, also makes any multiple stage rank and degree of depth high-precision optical element provides approach for making other simultaneously.The making accuracy requirement of this method to operator and operating equipment is relatively low, and yield rate is higher, has larger economic benefit.
Accompanying drawing explanation
Fig. 1 makes the first process flow diagram of organizing a performance rank in embodiment 1;
Fig. 2 makes the second process flow diagram of organizing a performance rank in embodiment 1;
Fig. 3 is the process schematic being etched second depth step in embodiment 2 by first time mask lithography in substrate;
Fig. 4 is the process schematic being etched the 4th depth step in embodiment 2 by second time mask lithography in substrate;
Fig. 5 is the process schematic making mask protection layer in embodiment 2;
Fig. 6 is the process schematic peeling off sacrifice layer in embodiment 2;
Fig. 7 is the process schematic being etched the 3rd depth step in embodiment 2 by mask lithography in substrate;
Fig. 8 uses back-exposure fabrication techniques 4 lenticular process schematic of step in embodiment 3.
In figure, 1 for substrate, and 2 be sacrifice layer, and 3 be positive photoresist, and 401 be the mask of mask lithography for the first time, and 402 is the mask of mask lithography for the second time, and 403 is the mask of mask lithography for the third time, and 5 is mask protection layer, and 6 is barrier bed.
Embodiment
The basic scheme of the inventive method is:
A method for making for multiple stage rank microlens array, lenticular all step depth be d1, d2, d3 ..., dn; The step of the method is as follows:
1), substrate is produced spaced first and to organize a performance rank, step is:
A), substrate etches that a series of interval is arranged, the degree of depth is the step of d1;
B), protection reaches the step that set depth is d1, and etch further remaining step, Formation Depth is the step of d3;
C), protection reaches the step that set depth is d3, etches further remaining step, the like, until etch first group of all step d1, d3, d5 ..., dn;
2), organize a performance first and to produce second between rank and to organize a performance rank; Step is:
D), first organizing a performance rank of having etched is protected; Organize a performance between rank first and etch the step that a series of degree of depth is d2;
E), protection reaches the step that set depth is d2, and etch further remaining step, Formation Depth is the step of d4;
G), protection reaches the step that set depth is d4, etches further remaining step, the like, until etch first group of all step d2, d4, d6 ..., dn-1.
Concrete, the present patent application provides at Fig. 1, Fig. 2 and a kind ofly makes 10 lenticular methods of step, all step depth that lenticule etches be d1, d2, d3 ..., d9, original depth is d0, according to above-mentioned basic scheme:
1), substrate is produced spaced first and to organize a performance rank, step is:
A), substrate etches that a series of interval is arranged, the degree of depth is the step of d1;
B), protection reaches the step that set depth is d1, and etch further remaining step, Formation Depth is the step of d3;
C), protection reaches the step that set depth is d3, etches further remaining step, Formation Depth is the step of d3, and protection depth is the step of d3, continues remaining step of etching, the like, until etch first group of all step d1, d3, d5, d7, d9;
2), organize a performance first and to produce second between rank and to organize a performance rank; Step is:
D), first organizing a performance rank of having etched is protected; Organize a performance between rank first and etch the step that a series of degree of depth is d2;
E), protection reaches the step that set depth is d2, and etch further remaining step, Formation Depth is the step of d4;
G), protection reaches the step that set depth is d4, etches further remaining step, the like, until etch second group of all step d2, d4, d6, d8; So far, lenticular ten step d1, d2, d3 ..., d9 etched, original depth is d0.
Use mask to carry out exposing, corrode and developing about photoresist layer, and relate to the concrete technology of etching, following examples are specifically introduced.In order to simplify process, for 4 steps, as shown in Fig. 3 to Fig. 7:
Embodiment 2
Fig. 3 to Fig. 5 is the method for making four step microlens arrays, and lenticular all step depth are d0, d1, d2, d3; Concrete steps are as follows:
1), substrate is produced spaced first and to organize a performance rank, step is:
A), substrate makes sacrifice layer and positive photoresist layer, by using mask to carry out photoetching and development, then etching two intervals settings, the degree of depth is the step of d1; As shown in Figure 3, wherein sacrifice layer is negative photo glue-line to this step, and substrate can be the quartz material of ultraviolet light, or the material such as silicon, germanium of not saturating ultraviolet light;
B), spin coating positive photoresist again, uses corresponding mask to carry out photoetching and development, and protection reaches the step d1 of set depth, and etch further remaining step, Formation Depth is the step of d3; This step as shown in Figure 4;
2), organize a performance first and to produce second between rank and to organize a performance rank; Step is:
C), at least organize a performance on rank etched first and make mask protection layer, then peel off sacrifice layer; Spin coating photoresist in substrate, uses corresponding mask to carry out photoetching and development, and organizing a performance between rank first etches the step that a series of degree of depth is d2, so far produces the microlens array of 4 steps; Wherein mask protection layer is chromium or silicon dioxide.This step as shown in Figure 5-Figure 7.
Embodiment 3
Be with the difference of embodiment 2, before etching second organizes a performance rank, use the method for back-exposure to make mask protection layer, as shown in Figure 8:
1), substrate is produced spaced first and to organize a performance rank, step is:
A), substrate makes sacrifice layer and positive photoresist layer, by using mask to carry out photoetching, development and corrosion, etching two intervals settings, the degree of depth is the step of d1; Wherein barrier bed 6, namely sacrifice layer is lighttight chromium metal level, and substrate is can the quartz of ultraviolet light thoroughly;
B), spin coating positive photoresist again, uses corresponding mask to carry out photoetching, development and corrosion, and protection reaches the step that set depth is d1, and etch further remaining step, Formation Depth is the step of d3;
2), organize a performance first and to produce second between rank and to organize a performance rank; Step is:
C), at least organize a performance on rank etched first and apply negative photoresist, from backside of substrate exposure, produce the mask protection layer that negative photoresist is formed; Spin coating positive photoresist again in substrate, use corresponding mask to carry out photoetching, development and corrosion, organizing a performance between rank first etches the step that a series of degree of depth is d2, so far, produces the microlens array of 4 steps.
The method of above-mentioned making four step microlens arrays that the present invention provides, is equally also applicable to make more multiple stage rank microlens array, repeats no more herein.
In technical scheme of the present invention, first piece of mask plate endless belt size is measure-alike with lenticule endless belt, and accuracy requirement is high; Residue mask plate endless belt does not need precision high especially, and size according to lenticule endless belt size design, can reserve aligning surplus; Mask protection layer is chromium or silicon dioxide.In above embodiment of the present invention, in operation, sacrifice layer can also grow barrier bed (as chromium film).
The method for making of above-mentioned multiple stage rank microlens array effectively can save Production Time, and lenticule precision is only determined by the precision of a mask lithography, fundamentally avoid conventional sleeve carving method and make the inevitable cumulative errors of microlens array making because bringing in the operations such as mask aligning, photoetching, etching, reduce difficulty, meet high-precision requirement in microlens array manufacturing process, effectively ensure and improve the optical properties such as microlens array diffraction benefit.
More than provide a kind of concrete embodiment, but the present invention is not limited to described embodiment.Below sum up basic scheme of the present invention.
Basic scheme of the present invention is, making the high problem of accuracy requirement, proposing a kind of thinking, when making, in substrate, first producing the step of initial depth at equal intervals to solve existing method to operator and operating equipment; And then according to technological process, on the interval on the step of each initial depth and between each step, etch, form the step of set depth.Substrate is produced the step of initial depth at equal intervals, there is the step of initial depth, just step to be produced can be positioned, make making precision not by the impact of the follow-up operation medial error such as mask aligning, photoetching, etching, and reduce mask, the accuracy requirement of the technique such as photoetching, etching.
After producing the step of initial depth, next step making, what provide as embodiment 1 is a kind of step array is divided into two groups---odd number group, even number set, and then make the step often organized successively, often organize a performance in the manufacturing process on rank, each etching is all steps do not completed of synchronous etching, and each step from be consistent to completing required etching number of times with its sequence number in this set.As when manufacturing d3, being the 2nd step in its this odd number group, therefore needing twice etching altogether, as d5, being the 3rd step in its this odd number group, therefore needing altogether to etch for three times.
On the basis of foundation basic scheme of the present invention, adoptable method for making is a lot, and embodiment 1 is only wherein a kind of.The mode of embodiment 1 can be saved time, and in fact, if do not consider efficiency, also can make each step successively.
And as the embodiment meeting embodiment 1 thinking, also step array can be divided into more group, rule is: in each group, arranges all at equal intervals between each step, on this interval, for arranging the step of other groups.
As: pair array step d1, d2, d3, d4, divide into groups divided by 3 gained remainders by step depth, have: first group: d1, d4, d7, d10 ... (remaininging 1), second group: d2, d5, d8 ... (remaininging 2), 3rd group: d3, d6, d9 ... (remaininging 0), this grouping, meets above-mentioned rule.
Then, first group, second group, the 3rd group can just be made successively.As when making d5 for second group, d5 is second group of second step, therefore needs twice etching to complete.
Basic ideas of the present invention are above-mentioned basic scheme, and for those of ordinary skill in the art, according to instruction of the present invention, designing the model of various distortion, formula, parameter does not need to spend creative work.The change carried out embodiment without departing from the principles and spirit of the present invention, amendment, replacement and modification still fall within the scope of protection of the present invention.
Claims (9)
1. a method for making for high precision multiple stage rank microlens array, is characterized in that, in substrate, first produce the step of initial depth at equal intervals; And then on interval on the step of each initial depth and between each step, etch, form the step of set depth.
2. method for making according to claim 1, is characterized in that, all steps to be produced are divided into two or more groups; Arrange at equal intervals between each step of each group; Make successively by group, make all steps of first group, make all steps of second group, the like; Often organizing a performance in the manufacturing process on rank, all steps do not completed of every subsynchronous etching; Organize a performance in rank one, each step from equal with the sequence number that it is organized a performance in rank at this to the etching number of times completing experience.
3. method for making according to claim 1, is characterized in that, lenticular all step depth be d1, d2, d3 ..., dn; The step of the method is as follows:
1), substrate is produced spaced first to organize a performance rank:
A), substrate etches that a series of interval is arranged, the degree of depth is the step of d1;
B), protection reaches the step that set depth is d1, and etch further remaining step, Formation Depth is the step of d3;
C), protection reaches the step that set depth is d3, etches further remaining step, the like, until etch first group of all step d1, d3, d5 ..., dn;
2), organize a performance first and to produce second between rank and to organize a performance rank:
D), first organizing a performance rank of having etched is protected; Organize a performance between rank first and etch the step that a series of degree of depth is d2;
E), protection reaches the step that set depth is d2, and etch further remaining step, Formation Depth is the step of d4;
G), protection reaches the step that set depth is d4, etches further remaining step, the like, until etch first group of all step d2, d4, d6 ..., dn-1.
4. method for making according to claim 3, it is characterized in that, step a) described in substrate, etch that a series of interval is arranged, to be the method for the step of d1 be the degree of depth: first in substrate, make sacrifice layer, spin coating photoresist on sacrifice layer, corresponding mask is utilized to carry out photoetching, development and corrosion, then etching sacrificial layer and substrate.
5. method for making according to claim 4, is characterized in that, steps d) described in the first method of organizing a performance rank of etching of protection be: at least organizing a performance on rank etched first makes mask protection layer, then peels off sacrifice layer.
6. method for making according to claim 4; it is characterized in that; described sacrifice layer not transmit ultraviolet light; steps d) described in the first method of organizing a performance rank of etching of protection be: at least organizing a performance on rank etched first applies negative photoresist; carry out exposing, developing at backside of substrate; then corrode, and erode sacrifice layer.
7. method for making according to claim 4, is characterized in that, the material of described substrate is quartz, silicon or germanium.
8. method for making according to claim 5, is characterized in that, described sacrifice layer is negative photoresist or negative polyimide.
9. method for making according to claim 6, is characterized in that, described sacrifice layer is chromium or silicon dioxide.
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| CN107275194A (en) * | 2017-06-29 | 2017-10-20 | 杭州士兰集成电路有限公司 | The manufacture method of hierarchic structure |
| CN110223957A (en) * | 2019-06-06 | 2019-09-10 | 西安增材制造国家研究院有限公司 | A kind of surface gold thin film graphic method based on multichip semiconductor step depth etching |
| CN111300163A (en) * | 2020-02-29 | 2020-06-19 | 湖南大学 | Manufacturing method of ion beam polished large-area monolithic integrated Fabry-Perot cavity color filter |
| CN111421390A (en) * | 2020-02-29 | 2020-07-17 | 湖南大学 | Ion beam polishing processing method for manufacturing micro-nano step array structure |
| WO2021008040A1 (en) * | 2019-07-12 | 2021-01-21 | Tcl华星光电技术有限公司 | Dry etching method for film layer structure, and film layer structure |
| CN113433617A (en) * | 2021-05-24 | 2021-09-24 | 浙江博蓝特半导体科技股份有限公司 | Planar optical waveguide and method for manufacturing the same |
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| CN113433617A (en) * | 2021-05-24 | 2021-09-24 | 浙江博蓝特半导体科技股份有限公司 | Planar optical waveguide and method for manufacturing the same |
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