CN104221141A - Method for producing at least one contacting surface of an element and sensor for recording a directional component of a directed measured value - Google Patents

Method for producing at least one contacting surface of an element and sensor for recording a directional component of a directed measured value Download PDF

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Publication number
CN104221141A
CN104221141A CN201380017688.8A CN201380017688A CN104221141A CN 104221141 A CN104221141 A CN 104221141A CN 201380017688 A CN201380017688 A CN 201380017688A CN 104221141 A CN104221141 A CN 104221141A
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Prior art keywords
recess
plate
transducer
contact
carrier material
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Granted
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CN201380017688.8A
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CN104221141B (en
Inventor
H.本策尔
C.舍林
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Robert Bosch GmbH
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Robert Bosch GmbH
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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10156—Shape being other than a cuboid at the periphery

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
  • Pressure Sensors (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)

Abstract

The invention relates to a method (200) for producing at least one contacting surface (104) of an element (100) constructed on a plate (600) made of carrier material, which element is aligned in a primary extension plane of the plate (600). The method (200) comprises a step of providing (202) a surface structure in the plate (600), which surface structure has a first recess (602) in the plate (600) arranged in the primary extension plane, wherein the first recess (602) has a depth that corresponds to a desired length of the contacting surfaces (104) within a tolerance range, wherein a conductive layer (608) is applied to the carrier material at least in the region of the surface structure, wherein the carrier material is exposed in a separation region (604), wherein the separating region (604) faces a top side of the plate (600) and is arranged directly adjacent to the first recess. The method (200) further comprises a step of generating (204) a second recess by removing the carrier material of the separating region (604) to a depth that exceeds the depth of the first recess. The method (200) finally comprises a step of separating (206) the plate (600) in the extension of the second recess (604) in order to produce a side surface of the element (100), wherein the contacting surface (104) is aligned transversely to the primary extension plane.

Description

Method for the manufacture of at least one contact-making surface of device and the transducer for the durection component that receives directed measurement parameter
Technical field
The present invention relates to for the manufacture of at least one contact-making surface of the device built on the plate be made up of carrier material method and relate to the transducer of the durection component for receiving directed measurement parameter.
Background technology
Magnetic field sensor combines with acceleration transducer in the housing and speed probe and is used to navigation purpose at present.At this, the magnetic-field component on x and y-axis is measured by fluxgate sensor, and z component utilizes Hall IC to determine.
DE 10 2,009 028 815 A1 describes the magnetometer with substrate and magnetic core.This substrate has the excitation coil for producing magnetic flux in magnetic core and this excitation coil has coil section, and this coil section is substantially perpendicular to the main extension plane of substrate.Described magnetic core is arranged in the outside of coil section.
Summary of the invention
Within this context, utilize invention describes according to independent claims for the manufacture of two methods being adjacent to two contact-making surfaces of the device built on the plate be made up of carrier material and the transducer for the durection component that receives directed measurement parameter.Favourable expansion scheme obtains from corresponding dependent claims and description below.
In the magnetic field sensor according to fluxgate/upside-down mounting core (Flipcore) principle, such as fluxgate magnetic core, the core of soft magnetism be alternately driven to periodically saturated in.Described core at this by two reverse coil windings.If move jagged alternating current at (excitation) coil midstream, then it induces electric current equally by common soft magnetism coil core switching ground when magnetization inversion in another (reception) coil.Driving voltage and receiver voltage are formed objects when there is not external field and are eliminated by reverse winding.If there is external magnetic field now, then the signal that result obtains in receiving coil produces the vector component being parallel to core direction, and this signal is proportional with the outside field applied.Utilize this principle can measure very little field.
Because described core can detect the component of the independent of direction in magnetic field, therefore need the device of multiple cores with different orientation, clearly to realize the spatial resolution in the magnetic field applied in such as all three dimensions.Generally speaking, provide three, distinguish the device of the core of orientation perpendicular to one another, the direction in space in magnetic field can be determined from three of a magnetic field vector component.
Semiconductor device can be contacted by bonding wire.Bonding wire is engaged on joint sheet, and described joint sheet has the common orientation of the basic side being parallel to semiconductor device, because engage automatically and realize perpendicular to basic side.
The present invention is based on following understanding, the vector component namely in order to detect measurement parameter is rotated and the device be fixed on side advantageously can have contact-making surface, can be electrically contacted via bonding wire on the side relative with this side.
The present invention proposes the method for at least one contact-making surface for the manufacture of the device built on the plate be made up of carrier material, this device is orientation in the main extension plane of plate, and wherein the method has step below:
Surface texture is provided in plate, this surface texture has at least one first recess be arranged in plate in main extension plane, wherein this recess has the degree of depth corresponding to the length desired by contact-making surface in range of tolerable variance, wherein at least in the region of surface texture, conductive layer is applied on carrier material, wherein in separated region, expose carrier material, wherein this separated region towards the upside of plate and the first recess direct neighbor arrange;
By removing carrier material in separated region until produce the second recess more than the degree of depth of the first recess depths; And
In the prolongation of the second recess, be separated this plate, so that the side of generation device, wherein contact-making surface is transverse to main extension plane earth orientation.
By for the manufacture of this execution mode of method can manufacture the very simple technically contact-making surface of device, this contact-making surface, transverse to the main extension planar orientation of plate, processes device by this plate.
In addition, the present invention proposes the transducer with following feature:
Matrix, it is with the first stationary plane and at least one second stationary plane, described first stationary plane for being fixed on carrier structure place by transducer on the first direction in space, described second stationary plane for being fixed on carrier structure place by transducer on second space direction, and wherein the first stationary plane is transverse to the second stationary plane ground orientation;
Sensor element, it is arranged in the sensor surface place positioned opposite with the first stationary plane, and wherein this transducer is configured to the durection component receiving the measurement parameter be directed; And
At least one contact-making surface, it is arranged in conduct electricity in the sensors sides positioned opposite with the second stationary plane and with this sensor element and is connected.
" contact-making surface " can be understood as the conducting surface structures for welding upper electric lead.Such as, contact-making surface can be the joint sheet for engaging bonding wire." carrier material " such as can be understood as semi-conducting material.Carrier material such as such as can exist with the form of the wafer be fabricated from a silicon with the form of thin slice or plate.The surface of plate can in main extension plane orientation.Device can be semiconductor device, and it has the hierarchy be made up of the layer of the layer insulated and region and printed conductor, function element, conduction and region.Especially, this device can be transducer, and it is configured to record and measures parameter at least partially.This transducer can have directional characteristic.This transducer such as can be constructed to the transducer for electricity, magnetic and/or electromagnetic field.So transducer can have direction of measurement, its structure by transducer is determined.The orientation of the dipole or transducer core with the conduction of coil such as can direction of measurement given in advance.Surface texture can be three-D profile.Especially, surface texture can by removing material from plate to manufacture.Equally, one or more layer can be applied on plate.Recess can be bag or perforation.Separated region can be carrier material can be removed to split the region of device wherein.At this, in separating step, the second recess configuration must than the first recess deeply, can be stitched to produce boundary in separated region.Advantageously, also in main extension plane, sequentially can arrange the 3rd recess, also i.e. the first recess and the 3rd recess, there is separated region in-between, and near range of tolerable variance (such as from 5 to percent 10 percent) or in described range of tolerable variance, there is identical size, described size equally in range of tolerable variance (such as from 5 to percent 10 percent) corresponding to the length desired by contact-making surface.Contact pin can be the thin residue carrier material between recess.Contact pin can laterally also namely on the direction of bearing of trend being different from surfaces of carrier materials, especially perpendicular to the orientation outwardly of carrier material.Element is oriented in transverse to a direction and is interpreted as here, and this element is in the alternative orientation being different from this direction, especially perpendicular to this alternative orientation ground orientation.Conductive layer can be such as metal layer, and it is corresponding to the profile of surface texture.Removal can be understood as etching or corrosion.Described removal can realize between the subregion of conductive layer in the region of recess self calibration.Flue or raceway groove can be formed in region in contact pin between these subregions of conductive layer.Thus, the removal in the darker region of plate can be realized targetedly.Described removal can realize on the direction of the central plane of contact pin.Separation can be understood as shearing, grinding, sawing or fractures.
The method can have the step be applied to by metal layer on conductive layer.Metal such as can be galvanically separated on the electrically conductive, to obtain the thickness of increase on the contact surface.By this execution mode, the electrical contact of device can be manufactured technically very simply from contact-making surface.
Insulating barrier can be arranged between conductive layer and carrier material.Insulating barrier can be applied on carrier material before conductive layer.Especially, when carrier material is semi-conducting material, insulating barrier can cause conductive layer from other components apart of device.
Otch can be introduced from the dorsal part of plate in the prolongation of the second recess.Thus, spillage of material when shearing on the sensitive front side of plate can be prevented.Device can have little distance each other.By being separated tabbing material and the other materials under contact pin, plate can be separated by the otch with the notch depth less than plate thickness.
Conductive layer can be interrupted in the region of separated region, to expose carrier material.Providing period, conductive layer also can be applied on the upside of contact pin, but and it be removed from upside.Such as, conductive layer can be removed by etching.Equally, the upside of contact pin is covered, to prevent the accumulation of metal level.
First recess can have approx on the second principal spread direction of main extension plane, also namely in range of tolerable variance (such as from 5 to percent 10 percent) corresponding to the width of the degree of depth of described recess.Can along the multiple recess of the device arrangements in future by width restriction, to obtain a large amount of contact-making surface.Thus, can in the multiple device terminal of contacts side surfaces.
According to another embodiment of the present invention, can provide a kind of method of at least two contact-making surfaces of two devices for the manufacture of being adjacent to build on the plate be made up of carrier material, these devices are orientation in the main extension plane of plate.In such an embodiment, there is provided surface texture providing in step, in plate, the 3rd recess is provided with in described surface texture, described 3rd recess arrangement is in main extension plane, wherein separated region is in first and the 3rd between recess, and wherein especially separated region has the stretching, extension be less than transverse to principal spread direction in the main extension plane of plate.In generating step, produce the second recess, the material of separated region is removed until more than first or the degree of depth of the 3rd recess depths.In addition, in this execution mode of the present invention, each generation device side in separating step, wherein contact-making surface is transverse to main extension plane earth orientation.This execution mode of the present invention provides especially efficiently and manufactures the advantage of multiple device thus at low cost.
Accompanying drawing explanation
Exemplarily the present invention is set forth further below by accompanying drawing.Wherein:
Fig. 1 shows the simplified schematic illustration of the transducer according to the embodiment of the present invention;
Fig. 2 show according to the embodiment of the present invention, for the manufacture of the flow chart of the method for two contact-making surfaces of two devices being adjacent to be structured on the plate be made up of carrier material;
Fig. 3 a and 3b shows the diagram of the transducer with conventional contacts face;
Fig. 4 a and 4b shows the diagram of the transducer with the contact-making surface according to the embodiment of the present invention;
Fig. 5 shows the diagram of the sensor device be made up of transducer according to the embodiment of the present invention;
Fig. 6 a to 6g show according to the embodiment of the present invention for the manufacture of transducer procedure of processing after half-finished diagram; And
Fig. 7 a to 7e show according to another embodiment of the present invention for the manufacture of transducer procedure of processing after half-finished diagram.
Embodiment
In explanation after the preferred embodiments of the present invention, for illustrate in different figures and act on similar element and use same or similar reference marker, wherein cancel the repeated description to these elements.
Fig. 1 shows the simplified schematic illustration of the transducer 100 according to the embodiment of the present invention.Transducer 100 and other transducers 100a, 100b and 100c relatively (multiple chips on the one wafer) illustrate.Transducer 100 to 100c processes from the plate that carrier material is made.Transducer has sensor element 102 and contact-making surface 104.Sensor element 102 is arranged on the upside of transducer 100.Relatively arrange with the downside of transducer 100 on the upside of this.This surface is connected with downside via the side of transducer 100.Transducer 100 has square configuration.Transducer 100 is semiconductor device.Contact-making surface 104 is arranged in the seamed edge place between surface and side and all has conductive region on surface and side.
Gap 106 is had between transducer 100 and adjacent transducer 100a.Gap 106 is dissolved carrier material by chemical mode and is produced in this surf zone.In the region of downside, gap 106 is such as produced by sawing by mechanical separation method.For manufacture two contact-making surfaces according to scheme presented here the region 108 of method before transducer 100 is split around contact-making surface 104 in implement.
For being distinctive by the half-finished details area after the procedure of processing of the manufacture process illustrated in figs. 6 and 7.
Fig. 2 shows the flow chart of the method 200 of two contact-making surfaces for the manufacture of two devices being adjacent to build on the plate be made up of carrier material according to the embodiment of the present invention.The method has to be provided the step of 202, generation or removes the step of 204 and the step being separated 206.These devices are orientation in the main extension plane of plate.Providing in step 202, providing or produce surface texture in plate, described surface texture has two recesses on the principal spread direction that is adjacent to be arranged in main extension plane, that be made up of plate.These recesses have the degree of depth corresponding to the length desired by contact-making surface in range of tolerable variance.Between these recesses, be furnished with contact pin, described contact pin especially has and is less than transverse to the stretching, extension on principal spread direction on principal spread direction.At least in the region of surface texture, conductive layer is applied on carrier material.Carrier material is exposed in the side on the upside of plate of contact pin.In removal step 204, the carrier material of contact pin and the carrier material in contact pin extension are removed.The extension of contact pin be interpreted as in carrier material in one direction as lower area, described region is in the continuity of the principal spread direction of contact pin in carrier material.Carrier material is such as removed by cutting technique.In separating step 206, plate is separated in the prolongation of contact pin, so that each side of generation device, the contact-making surface wherein exposed thus is transverse to main extension plane earth orientation.
Fig. 3 a and 3b shows the transducer 300 with conventional contacts face 302.As described in FIG, transducer 300 is semiconductor device, its on the plate be made up of semi-conducting material or wafer or by described plate or wafer by the manufacture of Chemical Physics manufacturing step.Described plate is greater than part described herein during manufacture process.Structure only can be introduced in plate from z direction.Side x and y of transducer 300 is just formed when plate being separated into single-sensor 300.
The space that Fig. 3 a shows with the transducer 300 of three visible surfaces x, y and z illustrates.On z face, be furnished with four contact-making surfaces 302 and connected magnetic field sensor 304.Not arrangement on x and y of side.
Fig. 3 b shows the vertical view of the face z of the more details with transducer 300.Magnetic field sensor 304 is constructed to magnetizable core, and it is oppositely arranged in the coil windings 306 at core place with two.Coil 306 is connected with each two in joint sheet 302 via feeder line 308.
Fig. 4 a and 4b shows the diagram of the transducer 100 according to the embodiment of the present invention.Here the transducer 100 shown in has two sensor elements 102, and it is configured to detect the part can measuring parameter respectively.Sensor element 102 orientation perpendicular to each other, to receive different piece according to the incident angle measuring parameter.As in figure 3, single-sensor element 102 is constructed to the magnetisable core with two reverse windings, and these windings are connected with contact-making surface 104 via feeder line 308.In this embodiment, transducer 100 has eight contact-making surfaces 104 along seamed edge, has 4 for each sensor element 102.Contact-making surface is provided for the face carrying out contacting on the upside of transducer 100 and on the side of transducer 100.
Fig. 4 a shows the vertical view on the surface of transducer 100.Sensor element 102 is with the seamed edge of the theta alignment transducer of 45 degree.Contact-making surface is arranged on seamed edge with becoming two groups.In fluxgate 102, respectively with two coil windings of 4 joint sheets 104 altogether in coil core 102.
Fig. 4 b shows the fragment of the end view of transducer 100.The side of shown is transducer 100, the contact-making surface 104 of transducer 100 is arranged on these sides.Show the contact-making surface 104 of one of transducer.Contact-making surface 104 along seamed edge with the pitch arrangement of rule.Joint sheet 104 is in the lateral edges place of chip.Contact-making surface 104 is arranged in in the region of the seamed edge on surface.At joint sheet 104 place at side place, carry out wire-bonded by this side.
Fig. 5 shows the diagram of the sensor device 500 be made up of the transducer 100 according to the embodiment of the present invention.This sensor device 500 has three transducers 100.These transducers 100 about direction of measurement with known angle relative to each other orientation.Thus, each direction in space part that can detect measurement parameter in these transducers 100.Generally, the signal of transducer 100 can correctly represent measurement parameter, because transducer 100 is structurally identical and does not have sensitivity difference.Two in transducer 100 are fixed on carrier structure 502 or housing bottom as stationary plane with downside.3rd transducer 100 is being fixed on carrier structure 502 as on the side of stationary plane.Transducer 100 adhesive phase 504 is fixed on carrier structure 502.Transducer 100 is electrically contacted via bonding wire 506.Be fixed in two transducers 100 on downside, bonding wire 506 is engaged on upside.In fixing transducer on the first side, bonding wire 506 is engaged on the second relative side.Therefore, it is impossible for side not having to engage when contact-making surface 104.
In the installation for realizing 3D magnetic field sensor 500, x transducer 100 can be won from wafer and is positioned in housing.At this, magnetic field sensor has orientation in the x direction.Y transducer 100 can be won from wafer and is positioned in housing equally.At this, magnetic field sensor has the orientation on y direction.
Z transducer 100 can after transducer 100 is won from wafer half-twist, the joint sheet 104 that exposes is pointed to.Magnetic field sensor 100 therefore in a z-direction orientation or its there is the stretching, extension of at least one part in a z-direction.Advantageously, transducer also can be used as x transducer and the y transducer 100 without contacts side surfaces.
Fig. 6 a to 6g shows the half-finished diagram after the procedure of processing for the manufacture of the transducer according to the embodiment of the present invention.In these diagrams, respectively illustrate cutaway view by hatching shown in Fig. 4 b, it comprises in FIG by region that frame goes out.The area of bond pads of two adjacent chips that shown is.In left side, draw the subregion of first sensor to be set up, draw the subregion of the second transducer on right side.The fragment of the platelet be made up of carrier material 600 is shown respectively in Fig. 6 a to 6g, multiple transducer can be processed from described platelet.In this diagram top, draw the upside of platelet, the main extension plane orthogonal on surface is arranged in plotting planes.Another principal spread direction on surface is arranged in diagram plane.
Illustrate by the carrier material 600 after the first preparation process of material cutting or removal from platelet 600 in Fig. 6 a.Be incorporated in surface by two channel shaped or U-shaped recess 602 or contact groove 602, described recess or contact groove have the degree of depth of the plan width corresponding to the contact-making surface at the following side place of transducer substantially.These recess 602 depth ratio width are large.Recess 602 is adjacent to be arranged in main extension plane.Between recess 602, contact pin 604 is not abraded from carrier material 600.For this reason, such as glue mask is applied on the surface of platelet 600, and sensing is left a blank, and these are left a blank corresponding to the profile of recess 602.Leave a blank can remove carrier material 600 targetedly by these.
In figure 6b, the oxide layer 606 of insulation is applied in the surface texture described in Fig. 6 a.Such as, oxide layer 606 applies as CVD or by thermal oxidation by evaporation process.Oxide layer 606 ensure that the insulation of carrier material, because carrier material 600 normally semi-conducting material.
In fig. 6 c, the conductive layer 608 be made of metal is applied in oxide layer 606.Metallization and structuring such as can be realized by lacquer spraying technique.The surface of carrier platelet 600 is then again exposed on the narrow side of contact pin 604.Metal 608 and oxide 606 can be etched splitting in groove (kerf after a while).In a state in which, plate 600 can be provided as the blank for the method for the manufacture of two contact-making surfaces according to scheme presented here.
In fig. 6d, the carrier material 600 of contact pin has been removed.Because the size of contact pin is little, form raceway groove or groove at this, this raceway groove or groove have self-alignment effect, wherein in the prolongation of the central plane of contact pin 604, remove other carrier material 600.Described removal can be realized by etching carrier material 600.Described cutting can when realizing without when other mask.Metal 608 or oxide 606 are used as mask.Cutting process is self-alignment.
In the region of the contact pin of removing now, oxide layer 66 is removed in Fig. 6 e.This removal can be realized by dissolving or etching oxide layer 606 such as HF vapor phase etchant as in Fig. 6 d.At this, metal level 608 is not etched.Equally, carrier material 600 keeps not by its impact.
Metal level 608 is etched in Fig. 6 f.Because metal 608 is etched from both sides in the region of previous contact pin simultaneously, achieve larger abrasion of materials amount there.Raceway groove in contact pin region is removed.Remaining metal surface is etched equally.But ideally, described abrasion of materials amount is less than the layer thickness of previously coating.Thin metal level 608 is retained on oxide 606.Metal 608 such as can be processed by wet etch step.Etching period is selected as making the metal 608 at the wall place at the second groove completely etched, and wherein this second groove is etched from both sides when etching.And the metal 608 on substrate wall and in joint sheet is only etched unilaterally and be therefore only thinningly slightly more than half.
In Fig. 6 g, separating cut 610 is introduced into until leaving a blank of describing Fig. 6 d from the dorsal part of platelet 600, and this is left a blank and to be separated with the second transducer 100b by first sensor 100a.These two transducer 100a and 100b have contact-making surface 104 now on the side formed by separating cut 100.The split example of transducer is as can be realized by conventional sawing.Contact-making surface is electrically connected with sensor element respectively.
Fig. 7 a to 7e show according to another embodiment of the present invention for the manufacture of transducer procedure of processing after half-finished diagram.Shown procedure of processing with through change or through the mode of expansion corresponding to the procedure of processing shown in Fig. 6 d to 6g.First step is similar to the manufacture process shown in Fig. 6 a to 6c.
In figure 7 a, another metal level 700 is applied on the metal level 608 described in Fig. 6 c.This another metal level 700 has the thickness being greater than metal level 608.This another metal level 700 is deposited on existing metal level 608 by plating with electrochemical means at this.In the region of contact pin 604, (expose carrier material 600 there), do not have depositing metal 700 or its be removed again.In the region of recess 602, the metal 700 that deposit is so many, makes recess 602 be filled again.After surface metalation (as shown in fig. 6 c), carry out now preferred currentless plating, its further groove 602 is filled up by metal 700 completely.The material that can be applied by plating is such as Cr, Ni, Pt, Au, Pd or their combination.The advantage of the metal 700 galvanically applied is, printed conductor low ohm on front side and the joint sheet low ohm at side place.
Illustrate with being similar to Fig. 6 d in fig .7b: how cutting carrier material 600 in the region of contact pin.At this, as in fig. 6d the raceway groove that formed be self-alignment and there is little width.Galvanically the metal 700 of deposit does not affect by it.Described cutting can be carried out without additional masks in pad area, because plated portions 700 can be used as mask.
Illustrate with being similar to Fig. 6 e in figure 7 c: in contact pin region, how removed oxide layer 606 is, to expose metal level 608.
Illustrate with being similar to Fig. 6 g in figure 7d: platelet 600 how to be separated by sawing otch 610.At this, as in Fig. 6 g, the side contacts face 104 of first sensor 100a and the second transducer 100b becomes and can reach.Because these recesses are filled again in this embodiment, therefore do not need to remove metal level 608.In this embodiment, metal level 608 forms the surface of contact-making surface 104.
Fig. 7 e shows the vertical view of the fragment shown in figure 7d of separated transducer 100a and 100b about Fig. 7 d.The otch seamed edge of the cut of dorsal part is illustrated as the seamed edge hidden.Contact-making surface 104 is equally wide with its length approx.Contact-making surface 104 also laterally completely cuts off relative to silicon or substrate 600 by oxide layer 606.As shown in Fig. 7 a to 7d, joint sheet 104 is made up of the metal 700 of original metal 608 and plating in this embodiment.The metal printed conductor 308 of each plating is directed to the unshowned sensor element of transducer 100a and 100b from contact-making surface.
In other words, Fig. 6 and 7 shows the manufacture method for the manufacture of z magnetic field sensor 100 according to different embodiments of the invention.Transducer 100 can be overturn the angle defined targetedly by the joint sheet 104 of side direction.Can as usual from overlying contact transducer at joint sheet 104 place.Sensor element 100 half-twist, make when arranging two magnetic field sensors as is shown in fig. 4 a on a single die, sensitive layer laterally tilts.Like this, the xz component in magnetic field or yz component can utilize on transducer 100 two fluxgates measured when not having Hall element.Z part is comprised in two fluxgate signals, x and y direction is only comprised in a signal respectively.In known magnetic field intensity situation or under the signal of fluxgate comprising two other orientations in the x and y direction and the condition of setting angle relative to each other, whole three magnetic-field components can be determined.
Being according to the feature of the device 100 of scheme presented here, arranging the device for determining physical measurement parameter 102 such as magnetic field on the first surface.Contact pad 104 is at least one perpendicular adjacent surface of substrate, and these contact pads are connected with device 102 on the first side.Device can be fixed in enclosure body via contact pad 104 and be electrically contacted.Instead, device 100 can be fixed on the surface relative with the surface carrying contact pad 104 in enclosure body and to utilize wire bonding contact in contact pad 104.
In order to manufacture device 100 according to scheme presented here, described device, as what represent by the semi-finished product obtained after processing step in figs. 6 and 7, performs processing step below.
First groove 602 is incorporated in the region of the contact hole of setting.
Deposition insulating layer 606.
Deposit and structured first metal layer 608.
The insulating barrier 606 previously introduced is removed in the region of the second groove.
Second groove is at least incorporated in the region of sawing groove and between the first contact-making surface groove 102.
The vertical wall of the insulating barrier 606 previously introduced from the second groove is removed.
Alternatively, metal level 608 can be etched with the following duration, and the half being slightly more than institute's deposition thickness in this duration is etched.
From the residual thickness of dorsal part sawing substrate 600 until the second groove.
Alternatively, also can be thickeied metal level 608 by the depositing technics of plating before sawing.
Before insulating barrier 606 in removal second groove region, can be thickened by the depositing technics of plating through structurized the first metal layer 608.
The transducer measuring magnetic field for 3D with only two different sensors substrates can be manufactured at low cost by manufacture method presented here.The Hall element for measuring vertical component can be cancelled.Such as can be used in such as navigator, clock and watch, smart phone or notebook computer as magnetic compass according to the transducer of scheme presented here.
Described and shown in the accompanying drawings embodiment is only exemplary selection.Different embodiments can fully or about each characteristically combine mutually.Also another embodiment supplementary can be carried out by the feature of an embodiment.
In addition, method step of the present invention can be repeated and to be different from described being sequentially implemented.

Claims (8)

1. for the manufacture of the method (200) of at least one contact-making surface (104) at the upper device (100) built of the plate be made up of carrier material (600), this device is orientation in the main extension plane of plate (600), and wherein the method (200) has step below:
(202) surface texture is provided in plate (600), this surface texture has at least one first recess (602) be arranged in plate (600) in main extension plane, wherein this first recess (602) has the degree of depth corresponding to the desired length of contact-making surface (104) in range of tolerable variance, wherein at least in the region of surface texture, conductive layer (608) is applied on carrier material, wherein in separated region (604), expose carrier material, wherein this separated region (604) towards plate (600) upside and first recess direct neighbor ground arrange;
By removing the carrier material of separated region (604) until produce (204) second recesses more than the degree of depth of the first recess depths; And
In the prolongation of the second recess (604), be separated (206) plate (600), so that the side of generation device (100), wherein contact-making surface (104) is transverse to main extension plane earth orientation.
2. method according to claim 1 (200), has the step be applied to by metal layer (700) on conductive layer (608).
3. according to the method (200) one of aforementioned claim Suo Shu, wherein provide structure as surface texture described providing in the step of (202), in described structure, between conductive layer (608) and carrier material, arrange insulating barrier (606).
4., according to the method (200) one of aforementioned claim Suo Shu, wherein carry out being separated in the prolongation of the second recess in the step of (206) and introduce otch (610) from the dorsal part of described plate (600).
5. according to the method (200) one of aforementioned claim Suo Shu, wherein provide structure as surface texture described providing in the step of (202), in described structure, conductive layer (608) is interrupted in the region of separated region (604), to expose carrier material.
6., according to the method (200) one of aforementioned claim Suo Shu, wherein provide the first recess (602) in the step of (202) on the second principal spread direction of main extension plane, have the width corresponding to the degree of depth of described first recess (602) in range of tolerable variance described.
7. according to one of aforementioned claim, for the manufacture of the method (200) of at least two contact-making surfaces (104) being adjacent to two devices (100) built on the plate be made up of carrier material (600), these devices are orientation in the main extension plane of plate (600), wherein provide surface texture described providing in the step of (202), in plate (600), the 3rd recess (602) is provided with in described surface texture, 3rd recess arrangement is in main extension plane, wherein separated region (602) is in first and the 3rd between recess, especially wherein separated region (602) has the stretching, extension be less than transverse to principal spread direction in the main extension plane of plate (600), wherein in the step producing (204), produce the second recess (602) like this, the material of separated region (604) is removed until more than first and/or the degree of depth of the 3rd recess (602) degree of depth, and a wherein side of each generation device (100) in the step being separated (206), wherein contact-making surface (104) is transverse to main extension plane earth orientation.
8. transducer (100), has feature below:
Matrix, it is with the first stationary plane and at least one second stationary plane, described first stationary plane for being fixed on carrier structure (502) place by transducer (100) on the first direction in space, described second stationary plane for being fixed on carrier structure (502) place by transducer (100) on second space direction, and wherein the first stationary plane is transverse to the second stationary plane ground orientation;
Sensor element, it is arranged in the transducer (100) positioned opposite with the first stationary plane on the surface, and wherein this transducer (100) is configured to the durection component receiving directed measurement parameter; And
At least one contact-making surface (104), it to be arranged on transducer (100) side positioned opposite with the second stationary plane and to conduct electricity with this sensor element and is connected.
CN201380017688.8A 2012-03-30 2013-02-01 For manufacturing the method in device contacts face and sensor for receiving durection component Expired - Fee Related CN104221141B (en)

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DE102012205268A DE102012205268A1 (en) 2012-03-30 2012-03-30 Method for producing at least one contacting surface of a component and sensor for receiving a directional component of a directional measured variable
PCT/EP2013/052005 WO2013143724A1 (en) 2012-03-30 2013-02-01 Method for producing at least one contacting surface of an element and sensor for recording a directional component of a directed measured value

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108604633A (en) * 2016-02-05 2018-09-28 德克萨斯仪器股份有限公司 Integrated magnetic flux door gear with three-dimensional sensing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
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JP2003347476A (en) * 2002-05-22 2003-12-05 Sanyo Electric Co Ltd Semiconductor integrated device and its manufacturing method
US7612443B1 (en) * 2003-09-04 2009-11-03 University Of Notre Dame Du Lac Inter-chip communication
CA2584851C (en) * 2004-11-04 2015-04-07 Microchips, Inc. Compression and cold weld sealing methods and devices
US7494920B2 (en) * 2005-10-14 2009-02-24 Honeywell International Inc. Method of fabricating a vertically mountable IC package
DE102009028815A1 (en) 2009-08-21 2011-02-24 Robert Bosch Gmbh Magnetic field sensor and method for producing a magnetic field sensor
US20110147867A1 (en) * 2009-12-23 2011-06-23 Everspin Technologies, Inc. Method of vertically mounting an integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108604633A (en) * 2016-02-05 2018-09-28 德克萨斯仪器股份有限公司 Integrated magnetic flux door gear with three-dimensional sensing

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