CN102169955A - Sensor element for magnetic field measurement, magnetic field sensor and method for producing sensor element - Google Patents
Sensor element for magnetic field measurement, magnetic field sensor and method for producing sensor element Download PDFInfo
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- CN102169955A CN102169955A CN2011100034979A CN201110003497A CN102169955A CN 102169955 A CN102169955 A CN 102169955A CN 2011100034979 A CN2011100034979 A CN 2011100034979A CN 201110003497 A CN201110003497 A CN 201110003497A CN 102169955 A CN102169955 A CN 102169955A
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- 238000005259 measurement Methods 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims description 37
- 230000004888 barrier function Effects 0.000 claims description 17
- 238000004458 analytical method Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000005284 excitation Effects 0.000 claims description 3
- 239000002184 metal Substances 0.000 description 5
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
- G01R33/072—Constructional adaptation of the sensor to specific applications
- G01R33/075—Hall devices configured for spinning current measurements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
Provided are sensor elements (42, 42') for magnetic field measurement. The sensor element is provided with a wafer structure (12) comprising a semiconductor substrate (13), insulating layers (14, 14') and a semiconductor layer (15, 15'). The sensor element comprises punches (16, 16') which pass through the insulating layers (14, 14'). The punch comprises a semiconductor substrate end face (17), a semiconductor layer end face (18) and side surfaces (19, 19') which are disposed in a semiconductor substrate (13) in parallel and in a pair. The end faces (17, 18) and the side surfaces (19, 19') are provided with sections of high conductivity (28, 29). The punches (16, 16') are provided with doping of low conductivity.
Description
Technical field
The present invention relates to a kind of sensor element that is used to measure magnetic field.
Background technology
Nowadays magnetic sensor based on Hall element can use in the semiconductor technology on plane.So EP 1 462 770 has described a kind of Hall element that has sensor element, this sensor element has and is arranged on contact site in the model, on Semiconductor substrate.The exciting current that flows in the chip plane is introduced into selected contact site and measures Hall voltage on other contact site.Select by switching contact site, can eliminate deviation.By applying exciting current and corresponding measurement in different directions, can detect magnetic field on the chip plane and in perpendicular to the chip plane.By this transducer, can very well detect magnetic-field component vertical on the chip plane.For the field component in the chip plane, can only realize low-down sensitivity by the electrode assembly on pure plane.
Summary of the invention
Relative therewith, the advantage that the sensor element that is used to measure magnetic field according to the present invention has is that Hall effect also is maximized at the magnetic direction that is in the chip plane.Like this, can on all three direction in spaces, determine magnetic vector with good precision.Especially, can on a structure, detect all magnetic-field components simultaneously.Thus, they stand drift identical, that for example cause owing to temperature course, stress influence.When described structure has similar length on all directions, can guarantee this point especially well.By electric current guiding Hall element and the magnetic direction quadrature, with its sensitivity maximization.Another advantage is, Hall element can by effective manufacture method on all three direction in spaces by structuring.
The sensor element that is used to measure magnetic field has chip architecture, and wherein this chip architecture has Semiconductor substrate, insulating barrier and semiconductor layer.This can realize the effective manufacture method perpendicular to the precision architecture on chip plane.Sensor element has the punch (Stempel) of the break-through of passing contact (durchkontakierten), this punch has Semiconductor substrate end face, semiconductor layer end face and paired parallel side in Semiconductor substrate, wherein said end face and side have the section that has high conductivity, and described punch has the inside alloy of band than low electric conductivity having between the section of high conductivity.At work, exciting current can one after the other be conducted through punch in different directions, and Hall voltage can be intercepted on section perpendicular, that have high conductivity.The high conductivity of this section can realize good measurement by collect and be directed away the charge carrier that forms Hall voltage effectively on the end face of punch and side.
In vertical view, punch preferably has polyhedral shape.Advantageously, punch has similar length on height and width.By the cross section of rectangle, can form punch simple, cube shaped, it has the sensitivity and the drift of symmetry on three dimensions.By the cross section of octahedra shape, be possible by the measurement of " spinning current " in the chip plane, wherein in the adjacent side of exciting current feed-in one after the other and Hall voltage measured on perpendicular side.Content corresponding also is applicable to the polyhedron of higher number, and wherein under four multiple situation, polyhedron has the right of the side that is perpendicular to one another respectively.
The preferred each interval of section with high conductivity of end face and side.These sections advantageously are connected with the lip-deep bonding face conduction of sensor element.The two has improved the intercepting that forms the charge carrier of Hall voltage.
The section with high conductivity of side advantageously has the side and mixes, the inside doping of mixing and be higher than punch inside in this side.The conductive section of upper surface advantageously has end face and mixes, and it is higher than inner the doping.Thus, can produce desirable different conductivity.
In an expansion scheme of the present invention, the bonding face that is connected with the section conduction with high conductivity of side is above the section with high conductivity that is arranged on the side on the punch basically.
But in the expansion scheme of the present invention to this alternative, the side is in the raceway groove, and the section with high conductivity of side is connected with conductive layer respectively, and this conductive layer extends towards the upside of substrate on its opposed side by raceway groove.The bonding face that is connected with the section conduction with high conductivity of side is arranged on the other Semiconductor substrate of punch.
Sensor element preferably has the contact punch of the conduction of the break-through of passing contact, wherein punch and contact punch each other in an electrically conductive connection under insulating barrier.The contact punch is used for the bonding face on the upside of the downside of punch and sensor element is electrically connected.Thus, whole bonding faces are positioned on the upside of sensor element.Electrical connection between punch and contact punch is undertaken by the conductive section in the semiconductor layer under insulating barrier, is perhaps undertaken by the conductor on the downside of transducer.
Have the magnetic field sensor that is used for the sensor element in multidimensional measure magnetic field according to the present invention and have control unit, be used for electric excitation sensor element and measurement and analysis Hall voltage.
Preferably the three-dimensional magnetic field is measured, however the present invention also can make up at two-dimensional measurement simplifiedly, for example have the only a pair of side of configuration as described above.
To describe the method that is used to make the sensor element that is used to measure magnetic field according to of the present invention, wherein all method steps needn't be implemented in proper order with this.This method comprises following method step:
A) make the chip architecture have Semiconductor substrate, insulating barrier and semiconductor layer, Semiconductor substrate and therefore the upside of sensor element be positioned on the back side of wafer;
B) form the punch that passes the break-through contact, this punch has Semiconductor substrate end face, semiconductor layer end face and paired side parallel, in Semiconductor substrate, and described break-through contact is formed on the section of the high conductivity on the semiconductor layer end face;
C) mixed in the inside of punch with low electric conductivity;
D) on Semiconductor substrate end face and side, form section with high conductivity.
Preferably, punch has polygonal basically cross section, and described method has following method step:
E) angle (Ecken) of the side that is adjacent to each other of removal punch.Thus, the section with high conductivity on the side is isolated from each other.
Advantageously, in the other method step, carry out:
F) form bonding face on the upside of Semiconductor substrate, this bonding face is connected with the section conduction with high conductivity.
In first deformation program, be directed on the upside of Semiconductor substrate at the section on the side for this reason, and there bonding face metallized with high conductivity.In second deformation program, the sidewall of the section with high conductivity of side by raceway groove is directed on the upside of sensor element and outside punch.
The electrical connection of punch downside favourablely by the bonding face on the upside of sensor element by the following method step carry out:
G) form the conduction contact punch that passes the break-through contact;
H) conduction of formation punch and contact punch is connected in semiconductor layer.
Description of drawings
Embodiments of the invention will be set forth by accompanying drawing, wherein:
Fig. 1 shows the flow chart of the method according to this invention;
Fig. 2 has illustrated according to the sensor element of making in wafer of the present invention with schematic diagram;
Fig. 3 schematically shows the processing according to the punch of sensor element of the present invention;
Fig. 4 has illustrated according to the sensor element with contact site of making in wafer of the present invention with schematic diagram;
Fig. 5 has illustrated according to the sensor element that has another contact site of making in wafer of the present invention with schematic diagram; And
Fig. 6 shows the vertical view that has the chip back surface of sensor element according to of the present invention.
Embodiment
The method that is used to make the sensor element that is used to measure magnetic field according to of the present invention has been shown in flow process Figure 10 in Fig. 1, and wherein all method steps that are described below needn't be implemented in proper order with this.The method step of flow process Figure 10 by and together set forth with Fig. 2 to 5.
At first with reference to Fig. 2 A, a) make the chip architecture 12 that has Semiconductor substrate 13, insulating barrier 14 and semiconductor layer 15 at method step; From Semiconductor substrate 13.Depositing insulating layer 14 on Semiconductor substrate 13, and it covers with semiconductor layer 15.Semiconductor layer 15 is by insulating barrier 14 and Semiconductor substrate 13 electric insulations.So, in the silicon technology situation, obtain for example silicon-on-insulator (SOI) wafer.
In method step subsequently, carry out b with reference to Fig. 2 B) form the punch 16 that passes 14 break-through contact, this punch has Semiconductor substrate end face 17, semiconductor layer end face 18 and paired side 19 parallel, in Semiconductor substrate 13.The punch 16 that constructs by the ditch etching comes the break-through contact by break-through contact site 20.Side 19 is in raceway groove 22,23.Can see contact punch 24 in Fig. 2 B in addition, it comes break-through contact by break-through contact site 25 and between raceway groove 23 and 26.The section of break-through contact site 20 usefulness high conductivity covers semiconductor layer end face 18.
Method step c) for example being mixed in the inside 27 of punch 16 with low electric conductivity can be at method step b) carry out afterwards or carry out in advance by selecting the wafer that mixes in advance.
On Semiconductor substrate end face 17 and side 19, form section 28,29,30 referring now to Fig. 2 C manner of execution step d) with high conductivity.This covers punch 16 by the semiconductor layer with higher-doped or is preferably undertaken by alloy is diffused into.Punch 16 and Semiconductor substrate 13, also have insulating barrier 14 partly to protect alternatively in case diffuse into by mask 32.Then, can for example cover side or end face contact site conductively by diffusing into alloy.
Fig. 3) correspondingly show method step e now) remove the angle 33 of the side that is adjacent to each other 19,34 of punch 16; , separated by the structuring once more as punch 16 so that realize the electricity of side 19,34.Thus, the section with high conductivity on the side is isolated from each other.If drive by exciting current in the sensor element of the finishing work afterwards, then can measure Hall voltage Ux 35 and Uy 36 independently of one another by end face 17,18 guiding.
Fig. 4 has illustrated that the other method step f) forms bonding face 37,38 on the upside 39 of Semiconductor substrate 13, and these bonding faces are connected with the section 28,29,30 with high conductivity.In first deformation program, be directed on the upside 39 of Semiconductor substrate 13 at the section on the side 28,29 with high conductivity, and there with bonding face 37 and 38 metallization.Bonding face 37,38 can be connected on analytical electron equipment or another chip by bonding line 40.
Fig. 4 with this external declaration of Fig. 2 B the bonding face 41 favourable electrical connection of step by the following method on the upside of punch downside or end face 18 and sensor element 42: g) form the contact punch 24 that passes the conduction that 14 break-through contact; H) form punch 16 and be connected 43 with the conduction of contact punch 24 under insulating barrier 14.
Conduction at punch shown in Fig. 4 16 and contact punch 24 is connected 43 conductors 44 that are embodied as on the downside of the sensor element on the semiconductor layer 15 42.The wafer section 45,46 of punch 16 and contact punch 24 separates by raceway groove 47 is electric each other.
Fig. 5 shows a form of implementation, but it has the design of alternative independent of each other with respect to Fig. 4.Be provided with the reference number that band is cast aside with similar elements among Fig. 4.But the bonding face that the design of first alternative relates to punch 16 outwards moves.At this, the section with high conductivity of side 19 ' is gone up guiding by the sidewall of raceway groove 50 to the upside 39 ' of sensor element 42 ' as metal level 48,49 equally alternatively now, is used to form sidewall contact site 51.The raceway groove of complete filling also is possible.At this, bonding line is directly connected on the sidewall contact site 51 of metal level 48,49.This design of spatially drawing back each other makes bonding become easy.
But the design of second alternative relates to being electrically connected the bonding face 41 on the upside of punch downside or end face 18 and sensor element 42.Is connected doping connection 54 in 53 semiconductor layers 15 ' that are embodied as under insulating barrier in the conduction of punch 16 ' shown in Fig. 4 and contact punch 24 '.The contact punch is surrounded by raceway groove 55.
Figure 6 illustrates the back side that has according to the wafer of the sensor element 42 ' among Fig. 5 of the present invention, the upside of sensor element is positioned on the back side of wafer.On chip architecture 12 ', the punch 16 ' with metal bonding face 38 ' of band rectangular cross section is surrounded by metal sidewall contact site 51,51.On its next door, the downside contact site that the 24 ' conduct of contact punch has metal bonding face 41 is equally surrounded by raceway groove 55.
Set forth the function have according to the magnetic field sensor of the sensor element that is used for multidimensional measure magnetic field of the present invention with reference to the reference axis x among Fig. 6, y, wherein the z axle is perpendicular to plane of delineation trend upwards.The control unit that is used for electric excitation sensor element and measurement and analysis Hall voltage one after the other guides predetermined exciting current by contacting in the positive coordinate direction and on the negative coordinate direction respectively on x, y and z direction to 38 ' and 41 ', 51 and 52.
By contact 38 ' and 41 ' the exciting current lz that guides is vertically crossed punch 16 ' at z direction upper reaches, the magnetic-field component in the chip plane also produces Hall voltage in the chip plane perpendicular to magnetic-field component.Measured on the y direction on the Hall voltage that produces on the x direction is contacting 52 by magnetic-field component Bx, and measured on the x direction on the Hall voltage that produces on the y direction is contacting 51 by magnetic-field component By.
By contact the exciting current Ix of 51 guiding are flatly crossed punch 16 ' at x direction upper reaches, also produce on z and the y direction Hall voltage perpendicular to magnetic-field component in the magnetic-field component on y and the z direction.Upward measured on the z direction in contact by magnetic-field component By to 38 ' and 41 ' at the Hall voltage that produces on the y direction, and measured on the y direction on the Hall voltage that produces on the z direction is contacting 52 by magnetic-field component Bz.
Content corresponding is applicable to by the exciting current Iy of contact to 52 guiding.The redundancy of repeatedly measuring (especially adding the situation at two senses of current of difference) by to the same magnetic field component is used to determine constantly deviation and drift.
Claims (15)
1. sensor element (42 that is used to measure magnetic field, 42 '), has chip architecture (12), it is characterized in that, this chip architecture (12) has Semiconductor substrate (13), insulating barrier (14,14 ') and semiconductor layer (15,15 '), and sensor element has the insulating barrier of passing (14,14 ') punch (16 of break-through contact, 16 '), this punch has Semiconductor substrate end face (17), semiconductor layer end face (18) and paired parallel side (19 in Semiconductor substrate (13); 19 '), wherein said end face (17,18) and side (19; 19 ') have the section (28,29,30) that has high conductivity, and described punch (16,16 ') has the doping of band low electric conductivity in inner (27).
2. sensor element according to claim 1 is characterized in that, in vertical view, punch (16,16 ') has polyhedral shape.
3. sensor element according to claim 1 and 2 is characterized in that, punch (16,16 ') has similar length on height and width.
4. according to each the described sensor element in the claim 1 to 3, it is characterized in that described end face (17) and side (19; 19 ') the section with high conductivity (28,29) each interval.
5. according to each the described sensor element in the claim 1 to 4, it is characterized in that described surface (39 with section (28,29,30) Yu sensor element of high conductivity; 39 ') bonding face (37,38 on; 38 ', 51) conduction connects.
6. according to each the described sensor element in the claim 1 to 5, it is characterized in that side (19; 19 ') the section with high conductivity (28,29) has the side and mixes, and this side doping is higher than the doping in inner (27).
7. according to each the described sensor element in the claim 1 to 6, it is characterized in that the conductive section (30) of upper surface (17) has end face and mixes, it is higher than the doping in inner (27).
8. according to each the described sensor element in the claim 1 to 7, it is characterized in that described side (19; 19 ') be in the raceway groove (22,23), and the section with high conductivity (28,29) of described side connects with conductive layer (48,49) respectively, described conductive layer extends towards the upside (39 ') of substrate on its opposed side by raceway groove (50).
9. according to each the described sensor element in the claim 1 to 8, it is characterized in that sensor element (42; 42 ') has the insulating barrier of passing (14; 14 ') the contact punch (24 of the conduction of break-through contact; 24 '), wherein punch (16,16 ') with contact punch (24,24 ') connection each other in an electrically conductive under insulating barrier (14,14 ').
10. a magnetic field sensor has the control unit that is used for the electric excitation sensor element, and described sensor element is used for multidimensional measure magnetic field and measurement and analysis Hall voltage, it is characterized in that, comprises according to the described sensor element of one of aforesaid right requirement.
11. a method that is used to make the sensor element that is used to measure magnetic field, wherein all method steps needn't be implemented in proper order with this, and described method is based on following method step:
A) manufacturing has Semiconductor substrate (13), insulating barrier (14; 14 ') and the chip architecture (12) of semiconductor layer (15,15 '),
It is characterized in that, comprise further method step:
B) insulating barrier (14 is passed in formation; 14 ') punch (16,16 ') of break-through contact, this punch has Semiconductor substrate end face, semiconductor layer end face (17) and paired side (19 parallel, in Semiconductor substrate (13); 19 ');
C) mixed in the inside (27) of punch (16,16 ') with low electric conductivity;
D) in Semiconductor substrate end face (18) and side (19; 19 ') go up the section (28,29,30) that formation has high conductivity.
12. the method that is used to make sensor element according to claim 11 is characterized in that, described punch (16,16 ') has polygonal basically cross section, and described method has following method step:
E) side that is adjacent to each other (19 of removal punch (16,16 '); 19 ') angle (33).
13. according to claim 11 or the 12 described methods that are used to make sensor element, it is characterized in that, comprise further method step:
F) on the upside of Semiconductor substrate, form bonding face (37,38; 38 ', 51), this bonding face connects with section (28,29, the 30) conduction with high conductivity.
14. the method that is used to make sensor element according to claim 13 is characterized in that, the bonding face (51) that is connected with the section with high conductivity of side (19 ') is outside punch (16 ').
15. according to the described method that is used to make sensor element of claim 11 to 14, it is characterized in that, comprise further method step:
G) form the conduction contact punch (24,24 ') that passes insulating barrier (14,14 ') break-through contact;
H) forming punch (16,16 ') under insulating barrier (14,14 ') connects with the conduction that contacts punch (24,24 ').
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010000769A DE102010000769A1 (en) | 2010-01-11 | 2010-01-11 | Sensor element for magnetic field measurement, magnetic field sensor and method for producing a sensor element |
| DE102010000769.2 | 2010-01-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102169955A true CN102169955A (en) | 2011-08-31 |
| CN102169955B CN102169955B (en) | 2015-09-09 |
Family
ID=43975353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110003497.9A Expired - Fee Related CN102169955B (en) | 2010-01-11 | 2011-01-10 | For measuring the sensor element in magnetic field, magnetic field sensor and the method for the manufacture of sensor element |
Country Status (4)
| Country | Link |
|---|---|
| CN (1) | CN102169955B (en) |
| DE (1) | DE102010000769A1 (en) |
| FR (1) | FR2955211B1 (en) |
| IT (1) | IT1403298B1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105143903A (en) * | 2013-03-11 | 2015-12-09 | ams有限公司 | Magnetic field sensor system |
| CN107966669A (en) * | 2017-12-19 | 2018-04-27 | 大连理工大学 | Semiconductor three-dimensional Hall sensor suitable for high-temperature work environment and preparation method thereof |
| CN111211219A (en) * | 2018-11-22 | 2020-05-29 | Tdk-迈克纳斯有限责任公司 | Semiconductor sensor structure |
| CN111211144A (en) * | 2018-11-21 | 2020-05-29 | Tdk-迈克纳斯有限责任公司 | SOI semiconductor structure and method for producing an SOI semiconductor structure |
| CN111435700A (en) * | 2019-01-14 | 2020-07-21 | Tdk-迈克纳斯有限责任公司 | Semiconductor sensor structure |
| CN117098447A (en) * | 2023-10-20 | 2023-11-21 | 北京智芯微电子科技有限公司 | Vertical Hall sensor, manufacturing method and chip |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102013209514A1 (en) | 2013-05-22 | 2014-11-27 | Micronas Gmbh | Three-dimensional Hall sensor for detecting a spatial magnetic field |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5543988A (en) * | 1993-04-30 | 1996-08-06 | International Business Machines Corporation | Hall sensor with high spatial resolution in two directions concurrently |
| DE10244096A1 (en) * | 2002-09-23 | 2004-04-01 | Robert Bosch Gmbh | Spinning current Hall sensor with homogeneous space charge zone |
| JP2006059877A (en) * | 2004-08-17 | 2006-03-02 | Denso Corp | Vertical hall element and its manufacturing method |
| US20070290682A1 (en) * | 2006-01-13 | 2007-12-20 | Denso Corporation | Magnetic sensor and method for detecting magnetic field |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10313642A1 (en) | 2003-03-26 | 2004-10-14 | Micronas Gmbh | Hall sensor with reduced offset |
-
2010
- 2010-01-11 DE DE102010000769A patent/DE102010000769A1/en not_active Withdrawn
-
2011
- 2011-01-07 FR FR1150125A patent/FR2955211B1/en not_active Expired - Fee Related
- 2011-01-10 IT ITMI2011A000008A patent/IT1403298B1/en active
- 2011-01-10 CN CN201110003497.9A patent/CN102169955B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5543988A (en) * | 1993-04-30 | 1996-08-06 | International Business Machines Corporation | Hall sensor with high spatial resolution in two directions concurrently |
| DE10244096A1 (en) * | 2002-09-23 | 2004-04-01 | Robert Bosch Gmbh | Spinning current Hall sensor with homogeneous space charge zone |
| JP2006059877A (en) * | 2004-08-17 | 2006-03-02 | Denso Corp | Vertical hall element and its manufacturing method |
| US20070290682A1 (en) * | 2006-01-13 | 2007-12-20 | Denso Corporation | Magnetic sensor and method for detecting magnetic field |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105143903A (en) * | 2013-03-11 | 2015-12-09 | ams有限公司 | Magnetic field sensor system |
| CN107966669A (en) * | 2017-12-19 | 2018-04-27 | 大连理工大学 | Semiconductor three-dimensional Hall sensor suitable for high-temperature work environment and preparation method thereof |
| CN107966669B (en) * | 2017-12-19 | 2019-11-08 | 大连理工大学 | Semiconductor three-dimensional Hall sensor and preparation method thereof suitable for high-temperature work environment |
| CN111211144A (en) * | 2018-11-21 | 2020-05-29 | Tdk-迈克纳斯有限责任公司 | SOI semiconductor structure and method for producing an SOI semiconductor structure |
| CN111211219A (en) * | 2018-11-22 | 2020-05-29 | Tdk-迈克纳斯有限责任公司 | Semiconductor sensor structure |
| CN111435700A (en) * | 2019-01-14 | 2020-07-21 | Tdk-迈克纳斯有限责任公司 | Semiconductor sensor structure |
| CN117098447A (en) * | 2023-10-20 | 2023-11-21 | 北京智芯微电子科技有限公司 | Vertical Hall sensor, manufacturing method and chip |
| CN117098447B (en) * | 2023-10-20 | 2024-02-06 | 北京智芯微电子科技有限公司 | Vertical Hall sensor, manufacturing method and chip |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2955211B1 (en) | 2016-02-19 |
| CN102169955B (en) | 2015-09-09 |
| DE102010000769A1 (en) | 2011-07-14 |
| ITMI20110008A1 (en) | 2011-07-12 |
| IT1403298B1 (en) | 2013-10-17 |
| FR2955211A1 (en) | 2011-07-15 |
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