CN107966669A - Semiconductor three-dimensional Hall sensor suitable for high-temperature work environment and preparation method thereof - Google Patents
Semiconductor three-dimensional Hall sensor suitable for high-temperature work environment and preparation method thereof Download PDFInfo
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- CN107966669A CN107966669A CN201711375441.XA CN201711375441A CN107966669A CN 107966669 A CN107966669 A CN 107966669A CN 201711375441 A CN201711375441 A CN 201711375441A CN 107966669 A CN107966669 A CN 107966669A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
Abstract
The present invention is to belong to three-dimensional Hall sensor field suitable for semiconductor three-dimensional Hall sensor of high-temperature work environment and preparation method thereof on a kind of.Technical solution：5 main electrodes and 8 Hall sensing electrodes are placed in semiconductor material surface, and 5 main electrodes include 1 central current and flow into electrode B and 4 electric current outflow electrode BsX1、BX2、BZ1、BZ2, 8 Hall sensing electrodes are respectively Z1~Z4And X1~X4；The insulating layer that 8 Hall sensing electrodes are embedded into separates.Beneficial effect is：The present invention is substantially reduced device creepage, reduces the measured deviation of device, improves device measurement sensitivity；Since space three-dimensional magnetic field detection can be achieved in same block semiconductor, the advantage of the motion Hall sensor chip is that encapsulation is simple, small, energy loss is small, cost is low；Can be in other various extreme environment normal works such as more than 300 DEG C hot environments and high temperature, high pressure, high radiation, and still keep the good linearity.
Description
Technical field
The invention belongs to three-dimensional Hall sensor field, more particularly to a kind of semiconductor three suitable for high-temperature work environment
Tie up Hall sensor and preparation method thereof.
Background technology
One-dimensional Hall sensor is divided into horizontal type and vertical-type, and typical water flat pattern device is cross, its structure such as Fig. 1 institutes
Show, include 4 identical and symmetrical electrode C1~C4.C2 applies excitation current source between C1, if vertical devices table
There are magnetic field, more sons (being assumed to be electronics) are moved to electrode C3 directions, while equivalent amount are occurring just in C4 in direction upwardly
Electric charge, when reaching stable, as a result generates Hull voltage between C3 and C4.For the Hall sensor of vertical stratification, such as
Described in document 1, the CMOS technology of standard is employed, its structure is as shown in Fig. 2, be 10 in doping concentration15cm-3N-type substrate on
The electrode, two p injections separation layers, the surface in non-electrode region for having 5 n+ doping grown the oxide layer and n+ of 100nm
Polysilicon layer.Electrode C2 ', C2 " and C2 " ' short circuits simultaneously apply excitation, and electrode C1 is grounded, when parallel device direction exists uniformly
During magnetic field, Hall voltage will be produced in electrode S1 and S2.
Typical two dimension Hall sensor, such as described in document 2, two One-dimensional Vertical Hall sensors are integrated in same
, can be with the orthogonal two-dimensional magnetic field of measurement space same plane on a semiconductor substrate.
Document 3 delivered it is a kind of can be with the embodiment in space exploration 3-dimensional magnetic field, by three identical one-dimensional Halls
Sensor is welded on pcb board mutual vertically, and the magnetic field of each one-dimensional Hall sensor measurement direction is so as to fulfill measurement 3
Tie up the purpose in magnetic field.In addition, document 4 also discloses a kind of structure of 3-dimensional Hall sensor, a kind of embodiment therein is as schemed
Shown in 3, include a conducting base, which includes two 104,106 and 3, flat interface electrode pairs being parallel to each other
Cn and Cn ' (n=1,2,3) and each electrode pair include first electrode Cn and second electrode Cn ', first electrode Cn distributions half
Conductor upper surface 104, second electrode Cn ' distribution semiconductors lower surface 106, line between line, C2 and C2 ' between C1 and C1 '
And between C3 and C3 ' line is orthogonal and symmetrical centre 110 in the chips at intersect, in addition, first electrode center
Line and the line at second electrode center are equilateral triangle.The device operation principle be respectively three electrode pairs be powered pressure or
Electric current, electrical potential difference is surveyed in the arbitrary electrode pair of other two, for example, in order to measure the magnetic field in z directions, electrode C1 and C1 ' it
Between service voltage or electric current, the electrical potential difference between measuring electrode C2 and C2 ', so changes the electrode pair for applying excitation and measurement electricity
The purpose in remaining direction magnetic field is extremely measured realizing.
The three-dimension sensor proposed in document 3 has used 3 identical horizontal Hall sensors, therefore, to assure that 3
Horizontal Hall sensor is in the complete perpendicular alignmnet in space 3-dimensional direction.As a result of off-gauge packaging technology, this results in envelope
Difficulty increasing, system bulk increase are filled, so as to increase the cost of manufacture device.
For the device that document 4 is delivered when actual production makes, photolithography process requires the accurate alignment of positive and negative electrode,
Three pairs of electrode connecting lines are distributed in accurate equilateral triangle, therefore it is required that accurately photoetching process and electrode lay-out, and actually
Thickness of semi-conducting material different zones itself is there are deviation, and there is also area for the semiconductor material thicknesses that different production batch use
Not, therefore, it is difficult to be produced with same set of reticle or same technological process, therefore bring that the production cost increases, product
The problems such as measurement accuracy declines.In addition, 4 motion of document measure every time some direction magnetic field must all change excitation electrode pair it is inclined
Configuration state, so undoubtedly reduces the measurement efficiency of device and easily goes wrong.
In terms of the effective operating temperature section of Hall sensor, in the Hall sensor product of practical application, such as
The 3D Hall sensor TLV493D-A1B6 of company of Infineon issue, its operating temperature range is -40~125 DEG C and grace intelligence Pu
The Xtrinsic MAG3110 three dimensional magnetometers of the issue of semiconductor company, its operating temperature range are -40~85 DEG C.Work as temperature
When higher than 150 DEG C, the above-mentioned type sensor has been difficult to meet needs.Its reason is mainly that conventional Hall sensor is based on silicon
Material either InAs (indium arsenide), InSb (indium antimonide) and GaAs (GaAs), these materials are all small gap materials, work as temperature
After degree rise, significant changes occur for device electrology characteristic, and particularly device background leakage substantially increases, and working sensor is stablized
Property and reliability are decreased obviously.
Existing common two-dimentional or three-dimensional Hall sensor is usually by the Hall sensor phase of two or three vertical-types
Mutually it is vertically integrated and measurement space two dimension or three-dimensional magnetic field is realized on a block semiconductor matrix.Multidimensional Hall sensor master at present
Existing technical disadvantages are wanted to include the following aspects.On the one hand, multidimensional Hall sensor systems are bulky at present, chip cloth
Office is complicated, therefore encapsulation difficulty is big, of high cost.On the other hand, Hall sensor is partly led with first and second generation such as Si, InSb at present
Based on body material, although these material technical maturities, the too low energy gap of material is limited by, usually can not directly be worked
In the hot environment more than 150 DEG C.In the extreme environment such as these height radiation such as space exploration, thermonuclear power plant and high temperature, these
Traditional material Hall sensor has been difficult to meet actual requirement.
Document 1：Popovic R S.The vertical Hall-effect device[J].IEEE Electron
Device Letters,1984,5(9):357-358.
Document 2：Ristic L,Paranjape M,Doan M T.2-D magnetic field sensor based
on vertical Hall device[C].Solid-State Sensor and Actuator Workshop,
1990.Technical Digest.IEEE.IEEE,1990:111-113.
Document 3：van der Meer J,Makinwa K,Huijsing J.Standard CMOS Hall-sensor
with integrated interface electronics for a 3D compass sensor[C].Sensors,
2007IEEE.IEEE,2007:1101-1104.
Document 4：Ao Lifu Borrows, Patrick Lu Te, A Futabutai Moore are used for space exploration magnetic field
Three-dimensional Hall sensor:CN 104181475 A[P].2014.
The content of the invention
Multidimensional Hall sensor systems are bulky, chip layout is complicated in order to solve in the prior art, so as to cause to seal
Dress difficulty is big, of high cost and the problem of can not be worked normally under the excessive environment of temperature, and the present invention, which provides, a kind of is suitable for height
Semiconductor three-dimensional Hall sensor of warm working environment and preparation method thereof, the three-dimensional Hall sensor is small, manufacture craft
Simply, can work normally in high temperature environments.
Technical solution is as follows：
A kind of semiconductor three-dimensional Hall sensor suitable for high-temperature work environment, 5 main electrodes and 8 Hall sensing electricity
Pole is placed in semiconductor material surface, and 5 main electrodes include 1 central current and flow into electrode B and 4 electric current outflow electrode BsX1、
BX2、BZ1、BZ2, 8 Hall sensing electrodes are respectively Z1~Z4And X1~X4；The insulation that 8 Hall sensing electrodes are embedded into
Layer separates, electric current outflow electrode BX1With BX2And electric current outflow electrode BZ1With BZ2Electrode B pair is flowed into respectively about central current
Claim, central current flows into electrode B, BX1And BX2Center is in same straight line, electrode B, BZ1And BZ2Center is also at same straight line,
And electrode B, BX1And BX2Straight line where center and electrode B, BZ1And BZ2Straight line where center is mutually perpendicular to；The Hall sensing electricity
Pole X1~X4Centered on the central current flows into electrode B, its surrounding, the Hall sensing electrode Z are distributed in1~Z4Also with
The central current is flowed into centered on electrode B, is distributed in its surrounding, the Hall sensing electrode Z1~Z4Rectangular shape distribution.
Further, it is interdigitated electrodes that the central current, which flows into electrode B, its is interdigital to stretch between adjacent insulating layer
Passage.
Further, Hall sensing electrode X1、X2It is symmetrical on central current inflow electrode B, and Hall sensing electrode X1、
X2Center is in electrode B, BZ1、BZ2On center connection straight line；Hall sensing electrode X3、X4It is symmetrical on central current inflow electrode B,
And Hall sensing electrode X3、X4Center is in electrode B, BX1、BX2On center connection straight line.
Further, the semi-conducting material is semiconductor material with wide forbidden band, using SiC, GaN, Ga2O3, ZnO, diamond
Any one；The insulating layer uses SiO2、Si3N4、Al2O3Any one, the insulating layer material is individual layer or more
Rotating fields.
Further, the electrode BZ1And BZ2The distance at edge and insulating layer edge is 2~5 μm.
Further, the Hall sensing electrode X3And X4The distance that electrode B is flowed into central current is less than Hall sensing electricity
Pole X1、X2The distance of electrode B is flowed into central current.
Further, the insulating layer is rectangular-shaped distribution, and the length of Z-direction is more than X-direction length.
Present invention additionally comprises a kind of semiconductor three-dimensional Hall sensor production method suitable for high-temperature work environment, step
It is as follows：
S1, the wide-band gap material by growth above the cushion above the substrate material of sensor, substrate and cushion
Epitaxial layer is cleaned by ultrasonic by acetone, ethanol, deionized water respectively, is then dried up with nitrogen, baking oven baking；
S2, define part table using photoetching technique, while defines sense current isolated area, by gluing, spin coating, light
Carve, development step formation etching window, wide-band gap material epitaxial layer is then etched using wet method or dry etching technology；
S3, using photoetching technique define each electrode zone, and forming electrode by gluing, spin coating, photoetching, development step sinks
Product window, using electron beam evaporation, magnetron sputtering, thermal evaporation deposition technology growth multiple layer metal film Ohm contact electrode, so
Afterwards by metal-stripping, cleaning, annealing, metal/semiconductor Ohmic contact is formed；
S4, utilize plasma enhanced chemical vapor deposition, atomic layer deposition, low-pressure vapor deposition depositing insulating layer
Material, embedded sense current isolated area simultaneously cover whole electrodes；
S5, using photoetching technique define each electrode window through ray, by gluing, spin coating, photoetching, development step, then uses
Wet method or dry etching technology etching insulating layer, form electrode measurement window.
Further, in step S1, each step ultrasonic time of acetone, ethanol, deionization is 10min, is then blown with nitrogen
10min is toasted at dry, 110 DEG C of baking oven.
Further, the substrate material uses Si or SiC or sapphire；The wide-band gap material using SiC, GaN,
Ga2O3, ZnO, diamond any one；The insulating layer material uses SiO2、Si3N4、Al2O3Any one, it is described absolutely
Edge layer material is individual layer or sandwich construction.
The beneficial effects of the invention are as follows：
Semiconductor three-dimensional Hall sensor of the present invention suitable for high-temperature work environment is used in the same third generation
Made in wide bandgap semiconductor and realize three-dimensional Hall sensor, propose that the insulating layer with sense current direction restriction effect is embedded in
Designing scheme, while effectively guiding sense current direction, is substantially reduced device creepage, reduces the measured deviation of device,
Improve device measurement sensitivity.Since space three-dimensional magnetic field detection can be achieved in same block semiconductor, which passes
The advantage of sensor chip is that encapsulation is simple, small, energy loss is small, cost is low.Further, since using SiC and GaN material as generation
The semiconductor material with wide forbidden band of table has larger energy gap, stronger radiation hardness ability and good chemical stability, suddenly
Sensor can other various extreme environments be normal in more than 300 DEG C hot environments and high temperature, high pressure, high radiation etc. for you
Work, and still keep the good linearity.
Brief description of the drawings
Fig. 1 is existing level type Hall sensor structure diagram；
Fig. 2 is existing vertical-type Hall sensor structure diagram；
Fig. 3 is existing three-dimensional Hall sensor structure diagram；
Fig. 4 is the three-dimensional Hall sensor structure diagram of the present invention；
Fig. 5 is the three-dimensional Hall sensor production method step schematic diagram of the present invention；
Fig. 6 is device detection scheme schematic diagram of the present invention；
Fig. 7 is TCAD simulated potentials distribution map 1 of the present invention；
Fig. 8 is TCAD simulated potentials distribution map 2 of the present invention；
Fig. 9 is TCAD simulated potentials distribution map 3 of the present invention；
Figure 10 is the three-dimensional Hall sensor output voltage of the present invention and temperature and the relation schematic diagram in magnetic field；
Figure 11 is the relation schematic diagram of the three-dimensional Hall sensor current sensitivity of the present invention and temperature.
Embodiment
Embodiment 1
As shown in figure 4, using semiconductor material with wide forbidden band such as SiC or GaN, 5 main electrodes are designed and produced in material surface
With 8 Hall sensing electrodes, metal/semiconductor contact type is Ohmic contact.Wherein 5 main electrodes are respectively 1 middle electrocardio
Stream flows into electrode (B) and 4 electric current outflow electrode (BX1、BX2、BZ1And BZ2), 8 Hall sensing electrodes are respectively X1~X4And Z1
~Z4, wherein two couples of Hall sensing electrode X1、X2And X3、X4Two magnetic-field components of measurement space (X and Z-direction), remaining four
Hall sensing electrode Z1~Z4Measure the 3rd magnetic-field component (Y-direction).
Using between Hall sensing electrode, 1., 2., 3. and 4., insulating layer material can be SiO to embedded insulating layer2、
Si3N4、Al2O3Deng can effectively guide sense current direction using the technology, while be substantially reduced device creepage.X-direction
Current channel length is one of important parameter, its length determines the magnetic field sensitivity in two direction of Z and Y, therefore insulating layer region
Size design is characterized as：Insulating layer is rectangular-shaped distribution, and the length of Z-direction should be greater than X-direction length.
In sensor basic structure, center main electrode is designed as interdigitation, interdigital passage between stretching into adjacent insulating layer, electricity
Pole BZ1And BZ2The distance at edge and insulating layer edge should be as small as possible, is typically designed as 2~5 μm.Electrode BX1With BX2And electrode
BZ1With BZ2Symmetrical, electrode B, B on center main electrode BX1And BX2Center is in same straight line, electrode B, BZ1And BZ2Also locate at center
In same straight line and electrode B, BX1And BX2Straight line where center and electrode B, BZ1And BZ2Straight line where center is mutually perpendicular to, device
Design also includes 8 Hall sensing electrode X1~X4And Z1~Z4.Wherein Hall sensing electrode X1、X2On B pairs of center main electrode
Claim, and Hall sensing electrode X1、X2Center is in electrode B, BZ1、BZ2On center connection straight line.Similarly, X3、X4Electrode pair is in
Heart main electrode B is symmetrical, also in electrode B, BX1、BX2On center connection straight line, but X3And X4Compare X1And X2Closer to center main electrode B.
X1、X2And X3、X4Two magnetic-field component (X and the Z parallel to device surface in two electrode pair difference measurement spaces, three magnetic fields
Direction).
Such as electrode pair X1、X2Measure the magnetic field B of X-directionX, electrode pair X3、X4Measure the magnetic field B of Z-directionZ.Electrode Z1~Z4
Measure the 3rd magnetic-field component B perpendicular to the former twoY(Y-direction), measures which kind of magnetic-field component is not limited to one of the above
Embodiment.Wherein Z1~Z4Main electrode electric current should be separated from and flow through the both sides in path, and be symmetric.In addition, in principal current
(this example is B → B for the path both sides flowed throughZ1、B→BZ2) addition insulating layer, all of above electrode shape can be not exactly the same, but
Electrode is all Ohmic contact type.
In working sensor, by BX1、BX2、BZ1And BZ2Electrode passes to electricity at the same time as common end grounding, center main electrode B
Stream or voltage.Due to electrode B, BZ1Between electric current and electrode B, BZ2Between size of current it is identical, direction on the contrary, when sky
Between X-direction there are during magnetic field, carrier is subject to Lorentz force and biases, the electrode X in the path that electric current flows through1、X2Biasing
On the contrary, produce electrical potential difference VHX.Likewise, when Z-direction is there are during magnetic field in space, because electrode B, BX1Between electric current
With electrode B, BX2Between size of current it is identical, direction is on the contrary, electrode X3、X4Between will produce electrical potential difference VHZ.Measure the 3rd
Magnetic-field component (Y-direction) is by two electrode pair Z1、Z3And Z2、Z4Realize, since the 3rd magnetic field is both perpendicular to electric current road
Footpath (X and Z-direction), this will give measurement Y direction magnetic field to bring error, this is the technology that such three-dimensional Hall sensor designs and produces
Difficult point.In order to shield or weaken influence of two current paths to detection Y-component, present patent application is proposed in Z-direction electric current
Path both sides are embedded in 4 identical insulator separation electric currents, so as to limit the direction of sense current, weaken and shield Z
The influence in direction magnetic field.In order to weaken the deviation that X direction magnetic field is brought, it is noted that the electric current of Z-direction is on the contrary, size is identical, originally
Patent application uses calculation formula VHY=(Z1-Z3+Z4-Z2)/2, can effectively reduce error caused by X direction magnetic field.
5 main electrodes and 8 sensing electrodes are integrated on same semi-conducting material by the present invention program, pass through introducing
Insulating layer, defines current direction and reduces measured deviation, realizes device overall dimensions and diminishes and can measurement space three in real time
The purpose in magnetic field is tieed up, solves the problem of device volume is huge, and measurement efficiency is low.In addition, the three-dimensional Hall in present patent application
Sensor is developed based on third generation semiconductor material with wide forbidden band, and device still keeps good when can measure magnetic field at high temperature
The linearity.
Fig. 5 illustrates the specific steps of present patent application element manufacturing, mainly including following process:
(a) device material prepares：
Sensor basic material includes the wide-band gap material of growth above the cushion and cushion above substrate, substrate
Epitaxial layer, substrate material include Si, SiC, sapphire etc., and wide-band gap material includes SiC, GaN, diamond, gallium oxide etc..Device
Material is cleaned by ultrasonic by acetone, ethanol, deionized water respectively, and each step ultrasonic time 10min, is then dried up with nitrogen, dried
10min is toasted at 110 DEG C of case.
(b) part table and sense current area of isolation etching：
Part table is defined using photoetching technique, while defines sense current isolated area, by gluing, spin coating, photoetching, aobvious
Shadow and etc. form good etching window, wide-band gap material epitaxial layer is then etched using wet method or dry etching technology.
(c) Ohm contact electrode makes：
Define each electrode zone using photoetching technique, by gluing, spin coating, photoetching, development and etc. formed it is good
Electrode deposition window, grows multiple layer metal film Ohmic contact using deposition techniques such as electron beam evaporation, magnetron sputtering, thermal evaporations
Electrode, then by metal-stripping, cleaning, annealing, forms good metal/semiconductor Ohmic contact.
(d) sense current isolated area insulating layer deposition：
Utilize plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), low pressure gas phase deposition
(LPCVD) the technology deposition SiO such as2、Si3N4Or Al2O3Deng insulating layer material, embedded sense current isolated area simultaneously covers whole electricity
Pole, so as to effectively reduce device creepage, the extraneous various particle radiations of shielding simultaneously reduce environmental contaminants influence.
(e) electrode window through ray is opened：
Define each electrode window through ray using photoetching technique, by gluing, spin coating, photoetching, development and etc., then using wet
Method or dry etching technology etching insulating layer, form electrode measurement window.
Three-dimensional Hall sensor proposed by the present invention, can measurement space three-dimensional in real time by the structure design of optimised devices
The flow direction that insulating layer is used for current limit is introduced in magnetic field, wherein device, reduces the measured deviation of device, another aspect device is adopted
Made of third generation semiconductor material with wide forbidden band, it is not necessary to which complicated doping process, manufacture craft are simple.
Device detection：
Device detection scheme as shown in fig. 6, the test system by sample stage, linear DC power supply, data acquisition module, temperature
Degree regulation and control module and adjustable direction and the magnetic field module composition of size.During test, sample is placed in sample stage, thermal module
Regulating and controlling temperature, magnetic field module apply the magnetic field size and Orientation needed, linear DC power output end interface unit central electrode B
Give high potential, BX1、BX2、BZ1And BZ2Electrode is as common end grounding, remaining 8 Hall sensing electrode Z1~Z4And X1~X4
Connect data acquisition module.
Embodiment 2
The present embodiment uses intrinsic GaN material, and material Background carrier concentration is 5 × 1015cm-3, the insulating layer material of use
Expect for Si3N4.Three main electrodes B, B of device chipX1、BX2Size is 10 μm of 40 μ m, other two main electrode BZ1、BZ2Ruler
Very little is 10 μm of 10 μ m, Hall sensing electrode Z1~Z4、X1~X4Size is 10 μm of 10 μ m, is each embedded in isolated insulation layer
Area size is 60 μm of 40 μ m, Hall sensing electrode X1、X2The distance at center and center main electrode B centers is 45 μm, Hall sense
Survey electrode X3、X4The distance at center and center main electrode B centers is 30 μm, main electrode BZ1、BZ2Center and center main electrode B centers
Distance be 75 μm, main electrode BX1、BX2The distance at center and center main electrode B centers is 85 μm, Hall sensing electrode Z1、Z2、
Z3And Z4Center mutual distance is 130 μm, and Fig. 7~11 illustrate TCAD the simulation experiment results in the present embodiment.
Shown in Fig. 7 is along surface electrode BZ1、X1、B、X2、BZ2The potential profile at center.Center main electrode B and master
Electrode BX1、BX2、BZ1And BZ2Between supply the magnetic field of 6V voltages and X-direction presence+0.5T, electric current is flowed to from center main electrode B
Main electrode BZ1When, Hall sensing electrode X1The majority carrier (electronics) of lower section is due to being subject to the effect of Lorentz force to +Y direction
Movement, electric current flow to main electrode B from center main electrode BZ2When, Hall sensing electrode X2Lower section majority carrier (electronics) due to by
Effect to Lorentz force is moved to -Y direction, as a result so that close to main electrode BZ1Hall sensing electrode X1 potential be more than lean on
Nearly main electrode BZ2Hall sensing electrode X2Potential, it is measured to learn Hall sensing electrode X2With Hall sensing electrode X1Electricity
Gesture is 4.49V and 4.62V respectively under the influence of a magnetic field, therefore VHX=0.13V.
Similarly, shown in Fig. 8 it is along surface electrode BX1、X3、B、X4、BX2The Potential Distributing at center, center main electrode B
With main electrode BX1、BX2、BZ1And BZ2Between supply the magnetic field of 6V voltages and Z-direction presence+0.5T, electric current is from center main electrode B
Flow to main electrode BX1When, Hall sensing electrode X3The majority carrier (electronics) of lower section is due to being subject to the effect of Lorentz force to+Y
Direction is moved, and electric current flows to main electrode B from center main electrode BX2When, below Hall sensing electrode X4 majority carrier (electronics) by
In being subject to the effect of Lorentz force to be moved to -Y direction, as a result so that close to main electrode BX1Hall sensing electrode X3 potentials be more than
Close to main electrode BX2Hall sensing electrode X4Potential, measured Hall sensing electrode X3And X4Potential in magnetic field
It is 5.10V and 4.98V respectively under effect, therefore VHZ=0.12V.
Different with the mode of measurement the first two magnetic-field component, the 3rd influences of the magnetic-field component Y to surface potential is such as
Shown in Fig. 9, wherein dotted line and solid line are respectively surface electrode Z1、Z3Or Z2、Z4The potential profile at center.When Y-direction exists
During+0.5T magnetic fields, due to the presence of insulating layer, Y direction magnetic field is to Z-direction (main electrode B → BZ1And B → BZ2) electric current shadow
Sound can almost be ignored, therefore only need to consider Y direction magnetic field to X-direction (main electrode B → BX1And B → BX2) electric current shadow
Ring, i.e. B → BX1Electric current is under +Y direction magnetic fields, and more sons (electronics) are moved to -Z direction, as a result so that Hall sensing electrode
Z1Potential is more than Z3, measurement result shows electrode Hall sensing electrode Z1And Z3Potential be respectively 2.670V and 2.600V, i.e.,
VZ1Z3=0.070V.Similarly, B → BX2Electric current under +Y direction magnetic fields, to +Z direction move, and as a result causes by more sons (electronics)
Hall sensing electrode Z4Potential is more than Z2 potentials, measures Hall sensing electrode Z2And Z4Potential is respectively 2.601V and 2.669V, i.e.,
VZ2Z4=-0.068V, in order to eliminate biasing of the X direction magnetic field to measuring electrode, using simple formula VHY=(Z1-Z3+Z4-
Z2)/2 eliminate error, final VHY=0.069V.
Figure 10 illustrates Hall sensor output voltage with temperature and the situation of change in magnetic field, wherein changes of magnetic field scope
0.1~0.5T, 300~600K of range of temperature, the supply electric current I of center main electrodeBiasFor 20mA.Can be with from experimental result
Find out, the Hall voltage in tri- directions of X, Y, Z all shows the good linearity, wherein X side with the increase of magnetic field intensity
To Hall voltage slightly raised with gradually rising for temperature.And the Hall voltage of Y, Z-direction with the rise of temperature and
Reduce, and the Hall voltage lines of X, Y, Z adjoin one another closely in the range of 300~600K, illustrate to design device in high temperature ring
Border function admirable.
Figure 11 is that device is respectively 0.5T, center main electrode B and main electrode B in tri- direction magnetic field intensities of X, Y, ZX1、
BX2、BZ1And BZ2Between supply 6V voltages, the current sensitivity in tri- directions of X, Y, Z that temperature obtains in the range of 300~600K
Situation of change, can be seen that the current sensitivity in three directions changes with temperature and varies less, wherein X from the result of emulation
Current sense 90~the 95V/AT of excursion in direction, Y-direction current sensitivity excursion are 34~35V/AT, and Z-direction is electric
It is 51~55V/AT to flow susceptibility excursion, thus can also show that the device high-temperature stability is excellent.
Three-dimensional Hall sensor proposed by the present invention, can measurement space three-dimensional magnetic field in real time, there is measurement efficiency height, linearly
Spend, is small, the advantage such as manufacture craft is simple.Since the three-dimensional Hall sensor that this invention is proposed is loose using the third generation
Bandgap semiconductor material makes, therefore can be the extreme environments such as high temperature, high pressure, high radiation still can keep stablizing the advantages of.
Embodiment 3
As a kind of individually embodiment or the supplement to embodiment 1, central current flows into electrode B using circular or square
Shape；Electric current flows out electrode BX1、BX2、BZ1、BZ2With 8 Hall sensing electrodes all with rectangular-shaped for prioritizing selection, while can also adopt
With circle.
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited thereto,
Any one skilled in the art in the technical scope of present disclosure, technique according to the invention scheme and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.Chip structure design of the present invention
Scheme is also applied for other types semiconductor, does not limit semiconductor parameter；The semiconductor material with wide forbidden band and isolated area insulation
Layer material is not limited to given example in application.
Claims (10)
1. a kind of semiconductor three-dimensional Hall sensor suitable for high-temperature work environment, it is characterised in that 5 main electrodes and 8
Hall sensing electrode is placed in semiconductor material surface, and 5 main electrodes include 1 central current and flow into electrode B and 4 electric current outflows
Electrode BX1、BX2、BZ1、BZ2, 8 Hall sensing electrodes are respectively Z1~Z4And X1~X4；8 Hall sensing electrodes are embedded into
Insulating layer separate, electric current outflow electrode BX1With BX2And electric current outflow electrode BZ1With BZ2Electricity is flowed into respectively about central current
Pole B is symmetrical, and central current flows into electrode B, BX1And BX2Center is in same straight line, electrode B, BZ1And BZ2Center is also at same
Straight line, and electrode B, BX1And BX2Straight line where center and electrode B, BZ1And BZ2Straight line where center is mutually perpendicular to；The Hall sense
Survey electrode X1~X4Centered on the central current flows into electrode B, its surrounding, the Hall sensing electrode Z are distributed in1~Z4
Also centered on the central current flows into electrode B, its surrounding, the Hall sensing electrode Z are distributed in1~Z4Rectangular shape point
Cloth.
2. it is suitable for the semiconductor three-dimensional Hall sensor of high-temperature work environment as claimed in claim 1, it is characterised in that institute
It is interdigitated electrodes to state central current and flow into electrode B, its interdigital passage stretched between adjacent insulating layer.
3. it is suitable for the semiconductor three-dimensional Hall sensor of high-temperature work environment as claimed in claim 1, it is characterised in that suddenly
You are sensing electrode X1、X2It is symmetrical on central current inflow electrode B, and Hall sensing electrode X1、X2Center is in electrode B, BZ1、BZ2
On center connection straight line；Hall sensing electrode X3、X4It is symmetrical on central current inflow electrode B, and Hall sensing electrode X3、X4
Center is in electrode B, BX1、BX2On center connection straight line.
4. it is suitable for the semiconductor three-dimensional Hall sensor of high-temperature work environment as claimed in claim 1, it is characterised in that institute
It is semiconductor material with wide forbidden band to state semi-conducting material, using SiC, GaN, Ga2O3, ZnO, diamond any one；The insulation
Layer uses SiO2、Si3N4、Al2O3Any one, the insulating layer material is individual layer or sandwich construction.
5. it is suitable for the semiconductor three-dimensional Hall sensor of high-temperature work environment as claimed in claim 3, it is characterised in that institute
State electrode BZ1And BZ2The distance at edge and insulating layer edge is 2~5 μm.
6. it is suitable for the semiconductor three-dimensional Hall sensor of high-temperature work environment as claimed in claim 1, it is characterised in that institute
State Hall sensing electrode X3And X4The distance that electrode B is flowed into central current is less than Hall sensing electrode X1、X2To central current stream
Enter the distance of electrode B.
7. if claim 1-6 any one of them is suitable for the semiconductor three-dimensional Hall sensor of high-temperature work environment, its spy
Sign is that the insulating layer is rectangular-shaped distribution, and the length of Z-direction is more than X-direction length.
8. a kind of semiconductor three-dimensional Hall sensor production method suitable for high-temperature work environment, it is characterised in that step is such as
Under：
S1, the wide-band gap material extension by growth above the cushion above the substrate material of sensor, substrate and cushion
Layer is cleaned by ultrasonic by acetone, ethanol, deionized water respectively, is then dried up with nitrogen, baking oven baking；
S2, define part table using photoetching technique, while defines sense current isolated area, by gluing, spin coating, photoetching, aobvious
Shadow step forms etching window, then etches wide-band gap material epitaxial layer using wet method or dry etching technology；
S3, using photoetching technique define each electrode zone, and electrode deposition window is formed by gluing, spin coating, photoetching, development step
Mouthful, using electron beam evaporation, magnetron sputtering, thermal evaporation deposition technology growth multiple layer metal film Ohm contact electrode, Ran Houjing
Metal-stripping, cleaning, annealing are crossed, forms metal/semiconductor Ohmic contact；
S4, utilize plasma enhanced chemical vapor deposition, atomic layer deposition, low-pressure vapor deposition depositing insulating layer material
Material, embedded sense current isolated area simultaneously cover whole electrodes；
S5, using photoetching technique define each electrode window through ray, by gluing, spin coating, photoetching, development step, then using wet method
Or dry etching technology etching insulating layer, form electrode measurement window.
9. being suitable for the semiconductor three-dimensional Hall sensor production method of high-temperature work environment as claimed in claim 8, it is special
Sign is, in step S1, the ultrasonic time of each step of acetone, ethanol, deionization is 10min, is then dried up with nitrogen, baking oven
10min is toasted at 110 DEG C.
10. the semiconductor three-dimensional Hall sensor for being suitable for high-temperature work environment such as 8 or 9 any one of them of claim makes
Method, it is characterised in that the substrate material uses Si or SiC or sapphire；The wide-band gap material using SiC, GaN,
Ga2O3, ZnO, diamond any one；The insulating layer material uses SiO2、Si3N4、Al2O3Any one, it is described absolutely
Edge layer material is individual layer or sandwich construction.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108548980A (en) * | 2018-06-28 | 2018-09-18 | 中国海洋石油集团有限公司 | A kind of Hall element screening plant and method |
| CN109188317A (en) * | 2018-09-14 | 2019-01-11 | 浙江红果微电子有限公司 | The hall device of flat magnetic field induction |
| CN109755381A (en) * | 2018-12-24 | 2019-05-14 | 合肥中感微电子有限公司 | Hall sensor and its manufacturing method |
| CN110095739A (en) * | 2019-06-19 | 2019-08-06 | 福州大学 | A kind of orthogonal array type Hall angular transducer system and method for motor |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58108026A (en) * | 1981-12-18 | 1983-06-28 | Victor Co Of Japan Ltd | Magnetoresistance effect type magnetic head |
| US20030016077A1 (en) * | 2000-02-16 | 2003-01-23 | Seagate Technology Llc | Balanced bi-directional current source |
| EP2000813A1 (en) * | 2007-05-29 | 2008-12-10 | Ecole Polytechnique Fédérale de Lausanne | Magnetic field sensor for measuring a direction of a magnetic field in a plane |
| CN102169955A (en) * | 2010-01-11 | 2011-08-31 | 罗伯特·博世有限公司 | Sensor element for magnetic field measurement, magnetic field sensor and method for producing sensor element |
| US20120169329A1 (en) * | 2009-06-30 | 2012-07-05 | Wolfgang Hellwig | Hall sensor element and method for measuring a magnetic field |
| CN103454602A (en) * | 2013-09-11 | 2013-12-18 | 北京大学 | Magnetic field measuring meter based on topological insulator and magnetic field measuring method |
| CN105185900A (en) * | 2014-06-17 | 2015-12-23 | 旭化成微电子株式会社 | Hall sensor |
| WO2016051726A1 (en) * | 2014-10-03 | 2016-04-07 | 旭化成エレクトロニクス株式会社 | Hall sensor manufacturing method, hall sensor, and lens module |
| CN105929343A (en) * | 2015-02-27 | 2016-09-07 | 英飞凌科技股份有限公司 | Magnetic field sensor |
| CN106784301A (en) * | 2016-12-27 | 2017-05-31 | 陕西科技大学 | A kind of high stable Hall element and preparation method thereof |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2362505A (en) * | 2000-05-19 | 2001-11-21 | Secr Defence | Magnetic Field Sensor |
| JP2008124262A (en) * | 2006-11-13 | 2008-05-29 | Oki Electric Ind Co Ltd | AlGaN/GaN-HEMT MANUFACTURING METHOD USING SELECTION-REGROWTH |
| CN102315124A (en) * | 2011-09-13 | 2012-01-11 | 中国电子科技集团公司第五十五研究所 | Manufacturing method for nitride high electron mobility transistor with dual-cavity field plate structure |
| CN102376874B (en) * | 2011-11-28 | 2013-07-31 | 中国科学院半导体研究所 | Semiconductor magneto-dependent sensor based on two-dimensional electro gas material and manufacturing method thereof |
| CN106784300A (en) * | 2012-12-14 | 2017-05-31 | 旭化成微电子株式会社 | The manufacture method of Magnetic Sensor and magnet sensor arrangement and Magnetic Sensor |
| CN103105592B (en) * | 2013-01-29 | 2015-03-25 | 中国科学院上海微系统与信息技术研究所 | Single-chip three-shaft magnetic field sensor and production method |
| US20140266159A1 (en) * | 2013-03-15 | 2014-09-18 | Ohio State Innovation Foundation | High temperature hall sensor for magnetic position sensing |
| DE102013209514A1 (en) * | 2013-05-22 | 2014-11-27 | Micronas Gmbh | Three-dimensional Hall sensor for detecting a spatial magnetic field |
| US9893119B2 (en) * | 2016-03-15 | 2018-02-13 | Texas Instruments Incorporated | Integrated circuit with hall effect and anisotropic magnetoresistive (AMR) sensors |
-
2017
- 2017-12-19 CN CN201910764863.9A patent/CN110376537B/en active Active
- 2017-12-19 CN CN201711375441.XA patent/CN107966669B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58108026A (en) * | 1981-12-18 | 1983-06-28 | Victor Co Of Japan Ltd | Magnetoresistance effect type magnetic head |
| US20030016077A1 (en) * | 2000-02-16 | 2003-01-23 | Seagate Technology Llc | Balanced bi-directional current source |
| EP2000813A1 (en) * | 2007-05-29 | 2008-12-10 | Ecole Polytechnique Fédérale de Lausanne | Magnetic field sensor for measuring a direction of a magnetic field in a plane |
| US20120169329A1 (en) * | 2009-06-30 | 2012-07-05 | Wolfgang Hellwig | Hall sensor element and method for measuring a magnetic field |
| CN102169955A (en) * | 2010-01-11 | 2011-08-31 | 罗伯特·博世有限公司 | Sensor element for magnetic field measurement, magnetic field sensor and method for producing sensor element |
| CN103454602A (en) * | 2013-09-11 | 2013-12-18 | 北京大学 | Magnetic field measuring meter based on topological insulator and magnetic field measuring method |
| CN105185900A (en) * | 2014-06-17 | 2015-12-23 | 旭化成微电子株式会社 | Hall sensor |
| WO2016051726A1 (en) * | 2014-10-03 | 2016-04-07 | 旭化成エレクトロニクス株式会社 | Hall sensor manufacturing method, hall sensor, and lens module |
| CN105929343A (en) * | 2015-02-27 | 2016-09-07 | 英飞凌科技股份有限公司 | Magnetic field sensor |
| CN106784301A (en) * | 2016-12-27 | 2017-05-31 | 陕西科技大学 | A kind of high stable Hall element and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| M. PARANJAPE 等: "A 3-D vertical Hall magnetic field sensor in CMOS technology", 《1991 INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS AND ACTUATORS. DIGEST OF TECHNICAL PAPERS》 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108548980A (en) * | 2018-06-28 | 2018-09-18 | 中国海洋石油集团有限公司 | A kind of Hall element screening plant and method |
| CN109188317A (en) * | 2018-09-14 | 2019-01-11 | 浙江红果微电子有限公司 | The hall device of flat magnetic field induction |
| CN109755381A (en) * | 2018-12-24 | 2019-05-14 | 合肥中感微电子有限公司 | Hall sensor and its manufacturing method |
| CN109755381B (en) * | 2018-12-24 | 2023-08-29 | 合肥中感微电子有限公司 | Hall sensor and manufacturing method thereof |
| CN110095739A (en) * | 2019-06-19 | 2019-08-06 | 福州大学 | A kind of orthogonal array type Hall angular transducer system and method for motor |
| CN110095739B (en) * | 2019-06-19 | 2024-01-16 | 福州大学 | Vertical array type Hall angle sensor system and method for motor |
| WO2021103052A1 (en) * | 2019-11-29 | 2021-06-03 | 大连理工大学 | High-temperature three-dimensional hall sensor with real-time working temperature monitoring function and manufacturing method therefor |
| US11828820B2 (en) | 2019-11-29 | 2023-11-28 | Dalian University Of Technology | High-temperature three-dimensional hall sensor with real-time working temperature monitoring function and manufacturing method therefor |
| CN112798867A (en) * | 2020-12-28 | 2021-05-14 | 北京东方计量测试研究所 | Base for realizing combined quantum Hall resistance sample |
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| CN110376537B (en) | 2020-07-24 |
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