CN102169955B - For measuring the sensor element in magnetic field, magnetic field sensor and the method for the manufacture of sensor element - Google Patents
For measuring the sensor element in magnetic field, magnetic field sensor and the method for the manufacture of sensor element Download PDFInfo
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- CN102169955B CN102169955B CN201110003497.9A CN201110003497A CN102169955B CN 102169955 B CN102169955 B CN 102169955B CN 201110003497 A CN201110003497 A CN 201110003497A CN 102169955 B CN102169955 B CN 102169955B
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- 238000000034 method Methods 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 230000004888 barrier function Effects 0.000 claims abstract description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000005284 excitation Effects 0.000 claims description 3
- 238000005259 measurement Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
- G01R33/072—Constructional adaptation of the sensor to specific applications
- G01R33/075—Hall devices configured for spinning current measurements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
A kind of sensor element (42,42 ') for measuring magnetic field, has chip architecture (12), and this chip architecture (12) has Semiconductor substrate (13), insulating barrier (14,14 ') and semiconductor layer (15,15 ').Sensor element has the punch (16,16 ') through insulating barrier (14,14 ') break-through contact, and this punch is with Semiconductor substrate end face (17), semiconductor layer end face (18) and the paired parallel side (19 in Semiconductor substrate (13); 19 '), wherein said end face (17,18) and side (19; 19 ') there is the section (28,29,30) with high conductivity, and described punch (16,16 ') has the doping of band low electric conductivity in inner (27).
Description
Technical field
The present invention relates to a kind of sensor element for measuring magnetic field.
Background technology
Nowadays magnetic sensor based on Hall element can be used in the semiconductor technology of plane.So EP 1 462 770 describes a kind of Hall element with sensor element, this sensor element with arrange in a model, contact site on a semiconductor substrate.The exciting current flowed in chip plane is introduced into selected contact site and measures Hall voltage on other contact site.Selecting by switching contact site, can deviation be eliminated.By applying exciting current and corresponding measurement in different directions, can chip plane and perpendicular to chip plane in detect magnetic field.By this transducer, can very well detect magnetic-field component vertical on chip plane.For the field component in chip plane, the electrode assembly by pure plane can only realize low-down sensitivity.
Summary of the invention
On the other hand, the advantage had for the sensor element measuring magnetic field according to the present invention is that Hall effect is also maximized for the magnetic direction be in chip plane.Like this, magnetic vector can be determined with good precision in all three spatial directions.Especially, all magnetic-field components can be detected in a structure simultaneously.Thus, they stand identical, such as due to drift that temperature course, stress influence cause.When described structure has similar length in all directions, this point can be ensured especially well.The electric current orthogonal with magnetic direction by Hall element guides, by its maximise sensitivity.Another advantage is, Hall element can be structured in all three spatial directions by effective manufacture method.
Sensor element for measuring magnetic field has chip architecture, and wherein this chip architecture has Semiconductor substrate, insulating barrier and semiconductor layer.This can realize the effective manufacture method of the precision architecture perpendicular to chip plane.Sensor element has the punch (Stempel) through break-through contact (durchkontakierten), this punch is with Semiconductor substrate end face, semiconductor layer end face and paired parallel side in the semiconductor substrate, wherein said end face and side have the section with high conductivity, and described punch has the inside alloy of band compared with low electric conductivity between the section with high conductivity.At work, exciting current one after the other can be conducted through punch in different directions, and Hall voltage can perpendicular, intercepted with on the section of high conductivity.The high conductivity of this section can realize good measurement by effectively collecting and be directed away the charge carrier of formation Hall voltage on the end face and side of punch.
In a top view, punch preferably has polyhedral shape.Advantageously, punch has similar length on height and width.By the cross section of rectangle, can form punch that is simple, cubic shaped, it has symmetrical sensitivity and drift in three dimensions.By the cross section of octahedra shape, the measurement by " spinning current " in chip plane is possible, in the side that wherein exciting current one after the other feed-in is adjacent and Hall voltage is measured on perpendicular side.Corresponding content is also applicable to the polyhedron of higher number, and wherein in the multiple situation of four, polyhedron has the right of side perpendicular to one another respectively.
The section with high conductivity of end face and side is preferably spaced.These sections advantageously conduct electricity with the bonding face on the surface of sensor element and are connected.The two improves the intercepting of the charge carrier forming Hall voltage.
The section with high conductivity of side advantageously has side doping, and the doping of this side is adulterated higher than the inside of punch inside.The conductive section of upper surface advantageously has end face doping, and it adulterates higher than inside.Thus, desired different conductivity can be produced.
In an expansion scheme of the present invention, conduct electricity with the section with high conductivity of side the bonding face be connected and be substantially arranged on punch above the section with high conductivity of side.
Can in the expansion scheme of the present invention of alternative to this, side be in raceway groove, and the section with high conductivity of side is connected with conductive layer respectively, and this conductive layer is extended towards the upside of substrate on its opposed side by raceway groove.Conduct electricity with the section with high conductivity of side the bonding face that is connected to be arranged in the other Semiconductor substrate of punch.
Sensor element preferably has the contact punch of conduction through break-through contact, its convex mould with contact punch connection each other in an electrically conductive under insulating barrier.Contact punch is for being electrically connected the bonding face on the downside of punch and the upside of sensor element.Thus, whole bonding faces is positioned on the upside of sensor element.Electrical connection between punch and contact punch is undertaken by the conductive section in the semiconductor layer under insulating barrier, or is undertaken by the conductor on the downside of transducer.
Magnetic field sensor with the with good grounds sensor element for multidimensional measure magnetic field of the present invention has control unit, for electric excitation sensor element and measurement and analysis Hall voltage.
Preferably three-dimension reconstruction, but the present invention also can build for two-dimensional measurement simplifiedly, such as, have the side only configured as described above for a pair.
By description according to the method for the manufacture of being used for the sensor element measuring magnetic field of the present invention, wherein all method steps need not be implemented with this order.The method comprises following method step:
A) manufacture with the chip architecture of Semiconductor substrate, insulating barrier and semiconductor layer, Semiconductor substrate and therefore the upside of sensor element be positioned on the back side of wafer;
B) form the punch through break-through contact, this punch has that Semiconductor substrate end face, semiconductor layer end face are parallel with paired, side in the semiconductor substrate, and described break-through contact is formed in the section of the high conductivity on semiconductor layer end face;
C) adulterated in the inside of the punch with low electric conductivity;
D) on Semiconductor substrate end face and side, form the section with high conductivity.
Preferably, punch has polygonal cross section substantially, and described method has following method step:
E) angle (Ecken) of the side adjacent to each other of punch is removed.Thus, the section with high conductivity on side is isolated from each other.
Advantageously, in other method step, carry out:
F) on the upside of Semiconductor substrate, form bonding face, this bonding face conducts electricity with the section with high conductivity and is connected.
The section with high conductivity on side for this reason in the first deformation program directed until Semiconductor substrate upside on, and there bonding face to be metallized.In the second deformation program, on the section with high conductivity of side is directed to sensor element upside by the sidewall of raceway groove and outside punch.
Electrical connection on the downside of punch advantageously by the bonding face on the upside of sensor element by the following method step carry out:
G) the conductive contact punch through break-through contact is formed;
H) form punch to be in the semiconductor layer connected with the conduction of contact punch.
Accompanying drawing explanation
Embodiments of the invention will be set forth by accompanying drawing, wherein:
Fig. 1 shows the flow chart according to method of the present invention;
Fig. 2 show in a schematic and manufactures sensor element in the wafer according to of the present invention;
Fig. 3 schematically shows the processing of the punch according to sensor element of the present invention;
Fig. 4 show in a schematic and manufactures the sensor element with contact site in the wafer according to of the present invention;
Fig. 5 show in a schematic according to the sensor element manufactured in the wafer with another contact site of the present invention; And
Fig. 6 shows the vertical view according to the chip back surface with sensor element of the present invention.
Embodiment
In flow process Figure 10, illustrated that wherein all method steps be described below need not be implemented with this order according to the method for the manufacture of the sensor element for measuring magnetic field of the present invention in FIG.The method step of flow process Figure 10 by and together set forth with Fig. 2 to 5.
First with reference to Fig. 2 A, a) chip architecture 12 with Semiconductor substrate 13, insulating barrier 14 and semiconductor layer 15 is manufactured at method step; From Semiconductor substrate 13.Depositing insulating layer 14 in Semiconductor substrate 13, it covers with semiconductor layer 15.Semiconductor layer 15 is by insulating barrier 14 and Semiconductor substrate 13 electric insulation.So, in silicon technology situation, obtain such as silicon-on-insulator (SOI) wafer.
In method step subsequently, carry out b) forming the punch 16 through 14 break-through contacts with reference to Fig. 2 B, this punch has that Semiconductor substrate end face 17, semiconductor layer end face 18 are parallel with paired, side 19 in Semiconductor substrate 13.Etch the punch 16 constructed by ditch and carry out break-through contact by break-through contact site 20.Side 19 is in raceway groove 22,23.In addition can see in fig. 2b contact punch 24, its by break-through contact site 25 come break-through contact and between raceway groove 23 and 26.Break-through contact site 20 section of high conductivity covers semiconductor layer end face 18.
Method step c) adulterating to the inside 27 of the punch 16 with low electric conductivity such as can at method step b) after carry out or carry out in advance by selecting the wafer that adulterates in advance.
On Semiconductor substrate end face 17 and side 19, the section 28,29,30 with high conductivity is formed referring now to Fig. 2 C manner of execution step d).This is by covering punch 16 with the semiconductor layer of higher-doped or carry out preferably by being diffused into by alloy.Punch 16 and Semiconductor substrate 13, insulating barrier 14 is also had partly to protect in case diffuse into by mask 32 alternatively.Then, such as side or end contact portion can be covered conductively by diffusing into alloy.
Fig. 3) accordingly illustrate now method step e) remove the angle 33 of the side 19,34 adjacent to each other of punch 16; If punch 16 is by structuring again, to realize the electrically separated of side 19,34.Thus, the section with high conductivity on side is isolated from each other.If the exciting current guided by means of end face 17,18 in the sensor element completed work afterwards drives, then can measure Hall voltage Ux 35 and Uy 36 independently of one another.
Fig. 4 describes other method step f) and form bonding face 37,38 on the upside 39 of Semiconductor substrate 13, and these bonding faces are connected with the section 28,29,30 with high conductivity.On the upside 39 of the directed until Semiconductor substrate 13 in the first deformation program of the section 28,29 with high conductivity on side, and there bonding face 37 and 38 is metallized.Bonding face 37,38 can be connected on analytical electron equipment or another chip by bonding line 40.
Fig. 4 with Fig. 2 B describes on the downside of punch or the favourable electrical connection of end face 18 and the bonding face 41 on the upside of sensor element 42 step by the following method in addition: the contact punch 24 g) forming the conduction contacted through 14 break-through; H) form punch 16 and be connected 43 with the conduction of contact punch 24 under insulating barrier 14.
Punch 16 in the diagram and contact the conduction of punch 24 and be connected 43 and be embodied as conductor 44 on the downside of the sensor element 42 on semiconductor layer 15.Punch 16 is electrically separated each other by raceway groove 47 with the wafer section 45,46 contacting punch 24.
Fig. 5 shows a form of implementation, its relative to Fig. 4 have independent of each other can the design of alternative.Element similar in Fig. 4 is provided with the reference number be with and skimmed.First can relate to the outwards movement of the bonding face of punch 16 in the design of alternative.At this, the section with high conductivity of present side 19 ' guides, for the formation of sidewall contact 51 on the upside 39 ' of sensor element 42 ' as the sidewall of metal level 48,49 by raceway groove 50 equally alternatively.The raceway groove of filling completely is also possible.At this, bonding line is directly connected on the sidewall contact 51 of metal level 48,49.This design spatially drawn apart from one another makes bonding become easy.
Second can relate on the downside of punch or the electrical connection of end face 18 and the bonding face 41 on the upside of sensor element 42 in the design of alternative.The conduction of the punch 16 ' in the diagram and contact punch 24 ' is connected the doping connection 54 in 53 semiconductor layers 15 ' being embodied as under insulating barrier.Contact punch is surrounded by raceway groove 55.
Figure 6 illustrates the back side of the wafer had according to the sensor element 42 ' in Fig. 5 of the present invention, the upside of sensor element is positioned on the back side of wafer.On chip architecture 12 ', the punch 16 ' with the metal bonding face 38 ' of band rectangular cross section is surrounded by metal sidewall contact site 51,51.On its side, contact punch 24 ' is surrounded by raceway groove 55 as the lower contact equally with metal bonding face 41.
Set forth the function of the magnetic field sensor of the with good grounds sensor element for multidimensional measure magnetic field of the present invention of band with reference to reference axis x, the y in Fig. 6, wherein z-axis is upwards moved towards perpendicular to the plane of delineation.Predetermined exciting current is one after the other guided 38 ' and 41 ', 51 and 52 by contacting in positive coordinate direction and on negative coordinate direction in the x, y and z directions respectively with the control unit of analysis Hall voltage for electric excitation sensor element and measurement.
Vertically flow through punch 16 ' in a z-direction by contact to the exciting current lz that 38 ' and 41 ' guide, the magnetic-field component in chip plane also produces Hall voltage in perpendicular to the chip plane of magnetic-field component.The Hall voltage produced in the x direction by magnetic-field component Bx contact to 52 on measured in y-direction, and the Hall voltage produced in y-direction by magnetic-field component By contact to 51 on measured in the x direction.
Flatly flow through punch 16 ' in the x direction by contact to the exciting current Ix that 51 guide, magnetic-field component in the y and z directions also produces the Hall voltage perpendicular to magnetic-field component on z and y direction.The Hall voltage produced in y-direction by magnetic-field component By in contact to measured in a z-direction on 38 ' and 41 ', and the Hall voltage produced in a z-direction by magnetic-field component Bz contact on to 52 measured in y-direction.
Corresponding content is applicable to the exciting current Iy guided 52 by contact.By the redundancy (especially adding the situation at difference two senses of current) of the repetitive measurement to same magnetic field component, be used to determine deviation and drift constantly.
Claims (14)
1. one kind for measuring the sensor element (42 in magnetic field, 42 '), there is chip architecture (12), it is characterized in that, this chip architecture (12) has Semiconductor substrate (13), insulating barrier (14,14 ') and semiconductor layer (15,15 '), and sensor element has through insulating barrier (14,14 ') punch (16 of break-through contact, 16 '), this punch is with Semiconductor substrate end face (17), semiconductor layer end face (18) and the paired parallel side (19 in Semiconductor substrate (13); 19 '), wherein said end face (17,18) and side (19; 19 ') there is the section (28,29,30) with high conductivity, and described punch (16,16 ') has the doping of band low electric conductivity in inner (27), wherein side (19; 19 ') the section (28,29) with high conductivity has side doping, and the doping of this side is higher than the doping in inner (27).
2. sensor element according to claim 1, is characterized in that, punch (16,16 ') has polyhedral shape.
3. sensor element according to claim 1 and 2, is characterized in that, punch (16,16 ') has equal or approximately equalised length on height and width.
4. sensor element according to claim 1 and 2, is characterized in that, described Semiconductor substrate end face (17) and side (19; 19 ') the section (28,29,30) with high conductivity is spaced.
5. sensor element according to claim 1 and 2, is characterized in that, described in there is the section (28,29,30) of high conductivity and the surface (39 of sensor element; 39 ') bonding face (37,38 on; 38 ', 51) conduction connects.
6. sensor element according to claim 1 and 2, is characterized in that, the conductive section (30) of Semiconductor substrate end face (17) has end face doping, and it is higher than the doping in inner (27).
7. sensor element according to claim 1 and 2, is characterized in that, described side (19; 19 ') be in raceway groove (22,23), and the section (28,29) with high conductivity of described side connects with conductive layer (48,49) respectively, described conductive layer is extended towards the upside (39 ') of substrate on its opposed side by raceway groove (50).
8. sensor element according to claim 1 and 2, is characterized in that, sensor element (42; 42 ') have through insulating barrier (14; 14 ') the contact punch (24 of the conduction of break-through contact; 24 '), its convex mould (16,16 ') with contact punch (24,24 ') connection each other in an electrically conductive under insulating barrier (14,14 ').
9. a magnetic field sensor, with the control unit for electric excitation sensor element, described sensor element is used for multidimensional measure magnetic field and measures and analyze Hall voltage, it is characterized in that, comprises according to the sensor element one of the claims Suo Shu.
10., for the manufacture of the method according to the sensor element for measuring magnetic field one of claim 1 to 8 Suo Shu, wherein all method steps need not be implemented with this order, and described method is based on following methods step:
A) manufacture with Semiconductor substrate (13), insulating barrier (14; 14 ') and the chip architecture (12) of semiconductor layer (15,15 '),
It is characterized in that, comprise further method step:
B) formed through insulating barrier (14; 14 ') punch (16,16 ') of break-through contact, this punch has that Semiconductor substrate end face (17), semiconductor layer end face (18) are parallel with paired, side (19 in Semiconductor substrate (13); 19 ');
C) adulterated in the inside (27) of the punch (16,16 ') with low electric conductivity;
D) in Semiconductor substrate end face (17) and side (19; 19 ') upper formation has the section (28,29,30) of high conductivity.
11. methods for the manufacture of sensor element according to claim 10, is characterized in that, described punch (16,16 ') has polygonal cross section, and described method has following method step:
E) side (19 adjacent to each other of punch (16,16 ') is removed; 19 ') angle (33).
12. methods for the manufacture of sensor element according to claim 10 or 11, is characterized in that, comprise further method step:
F) on the upside of Semiconductor substrate, bonding face (37,38 is formed; 38 ', 51), this bonding face connects with the section (28,29,30) with high conductivity.
13. methods for the manufacture of sensor element according to claim 12, is characterized in that, the bonding face (51) be connected with the section with high conductivity of side (19 ') is outside punch (16 ').
14. methods for the manufacture of sensor element according to claim 10 or 11, is characterized in that, comprise further method step:
G) the conductive contact punch (24,24 ') through insulating barrier (14,14 ') break-through contact is formed;
H) under insulating barrier (14,14 '), form punch (16,16 ') connect with the conduction contacting punch (24,24 ').
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010000769.2 | 2010-01-11 | ||
| DE102010000769A DE102010000769A1 (en) | 2010-01-11 | 2010-01-11 | Sensor element for magnetic field measurement, magnetic field sensor and method for producing a sensor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102169955A CN102169955A (en) | 2011-08-31 |
| CN102169955B true CN102169955B (en) | 2015-09-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110003497.9A Expired - Fee Related CN102169955B (en) | 2010-01-11 | 2011-01-10 | For measuring the sensor element in magnetic field, magnetic field sensor and the method for the manufacture of sensor element |
Country Status (4)
| Country | Link |
|---|---|
| CN (1) | CN102169955B (en) |
| DE (1) | DE102010000769A1 (en) |
| FR (1) | FR2955211B1 (en) |
| IT (1) | IT1403298B1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2778704B1 (en) * | 2013-03-11 | 2015-09-16 | Ams Ag | Magnetic field sensor system |
| DE102013209514A1 (en) | 2013-05-22 | 2014-11-27 | Micronas Gmbh | Three-dimensional Hall sensor for detecting a spatial magnetic field |
| CN110376537B (en) * | 2017-12-19 | 2020-07-24 | 大连理工大学 | Manufacturing method of semiconductor three-dimensional Hall sensor suitable for high-temperature working environment |
| DE102018009110A1 (en) * | 2018-11-21 | 2020-05-28 | Tdk-Micronas Gmbh | SCI semiconductor structure and method for producing an SOI semiconductor structure |
| DE102018009162A1 (en) * | 2018-11-22 | 2020-05-28 | Tdk-Micronas Gmbh | Semiconductor sensor structure |
| DE102019000165B4 (en) * | 2019-01-14 | 2024-06-27 | Tdk-Micronas Gmbh | Semiconductor sensor structure |
| CN117098447B (en) * | 2023-10-20 | 2024-02-06 | 北京智芯微电子科技有限公司 | Vertical Hall sensor, manufacturing method and chip |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5543988A (en) * | 1993-04-30 | 1996-08-06 | International Business Machines Corporation | Hall sensor with high spatial resolution in two directions concurrently |
| DE10244096A1 (en) * | 2002-09-23 | 2004-04-01 | Robert Bosch Gmbh | Spinning current Hall sensor with homogeneous space charge zone |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10313642A1 (en) | 2003-03-26 | 2004-10-14 | Micronas Gmbh | Hall sensor with reduced offset |
| JP4466276B2 (en) * | 2004-08-17 | 2010-05-26 | 株式会社デンソー | Vertical Hall element and manufacturing method thereof |
| JP4674578B2 (en) * | 2006-01-13 | 2011-04-20 | 株式会社デンソー | Magnetic sensor and magnetic detection method |
-
2010
- 2010-01-11 DE DE102010000769A patent/DE102010000769A1/en not_active Withdrawn
-
2011
- 2011-01-07 FR FR1150125A patent/FR2955211B1/en not_active Expired - Fee Related
- 2011-01-10 IT ITMI2011A000008A patent/IT1403298B1/en active
- 2011-01-10 CN CN201110003497.9A patent/CN102169955B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5543988A (en) * | 1993-04-30 | 1996-08-06 | International Business Machines Corporation | Hall sensor with high spatial resolution in two directions concurrently |
| DE10244096A1 (en) * | 2002-09-23 | 2004-04-01 | Robert Bosch Gmbh | Spinning current Hall sensor with homogeneous space charge zone |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2955211A1 (en) | 2011-07-15 |
| ITMI20110008A1 (en) | 2011-07-12 |
| FR2955211B1 (en) | 2016-02-19 |
| CN102169955A (en) | 2011-08-31 |
| DE102010000769A1 (en) | 2011-07-14 |
| IT1403298B1 (en) | 2013-10-17 |
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